WO2015132847A1 - Ｉｇｂｔ，パワーモジュール，パワーモジュールの製造方法，および電力変換装置 - Google Patents

Ｉｇｂｔ，パワーモジュール，パワーモジュールの製造方法，および電力変換装置 Download PDF

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WO2015132847A1
WO2015132847A1 PCT/JP2014/055219 JP2014055219W WO2015132847A1 WO 2015132847 A1 WO2015132847 A1 WO 2015132847A1 JP 2014055219 W JP2014055219 W JP 2014055219W WO 2015132847 A1 WO2015132847 A1 WO 2015132847A1
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igbt
power module
circuit board
chip
gate
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PCT/JP2014/055219
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English (en)
French (fr)
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善章 豊田
順一 坂野
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株式会社日立製作所
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Priority to PCT/JP2014/055219 priority Critical patent/WO2015132847A1/ja
Publication of WO2015132847A1 publication Critical patent/WO2015132847A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Definitions

  • the present invention relates to an IGBT, a power module, a method for manufacturing a power module, and a power converter, and more particularly to an improvement in yield when the IGBT is mounted.
  • An insulated gate bipolar transistor is a switching element that controls a current flowing between a collector electrode and an emitter electrode by a voltage applied to a gate electrode.
  • the power that can be controlled ranges from tens of watts to hundreds of thousands of watts, and the switching frequency ranges from tens of hertz to over 100 kilohertz. Taking advantage of this feature, it is widely used from household power-saving devices such as air conditioners and microwave ovens to inverters for electric vehicles, railways, and steelworks.
  • Patent Document 1 a plurality of guard rings, a plurality of conductors individually formed on the plurality of guard rings, a high-resistance semi-insulating film that integrally covers the plurality of conductors, and a guard ring
  • the guard ring is a semiconductor layer for forming an annular pn junction in the outer peripheral portion of the IGBT chip.
  • the depletion layer inside the IGBT element is used as the outer periphery of the chip. High pressure resistance is achieved by stretching in the direction.
  • the characteristics of the high-resistance semi-insulating film can be measured by the conductivity monitor and the interface charge amount monitor.
  • FIG. 14 shows a cross-sectional structure of a vertical IGBT used for the study by the inventors of the present invention.
  • a hole emitter layer PE is formed in contact with the collector electrode COL, and an n-type buffer layer NB and an n-type drift layer ND are sequentially formed.
  • a pair of trench gates TG is formed in the n-type drift layer ND, and a first region and a second region are formed across the trench gate TG.
  • a p-type base layer PB and an n-type source layer NS are formed in contact with the emitter electrode EMT.
  • the p-type floating layer PF is formed in a state of being separated from the trench gate.
  • the vertical IGBT element requires electrodes to be formed on both sides of the substrate, and careful handling is required.
  • the gate oxide film is liable to cause dielectric breakdown due to static electricity or the like
  • the gate electrode formation surface is often treated as the front side and the collector electrode formation surface as the back side.
  • the collector electrode on the back side often comes into contact with the jig during the inspection process or case conveyance, and scratches may occur in rare cases.
  • scratches occur on the back surface and the hole emitter layer PE on the back surface is lost, a parasitic diode composed of the p-type base layer PB, n-type drift layer ND, and n-type buffer layer NB on the front surface is formed.
  • the IGBT mounted on the power converter performs a turn-off operation
  • the IGBT of the opposite arm performs a forward recovery operation, and thus a positive voltage is applied to the emitter electrode with respect to the collector electrode.
  • parasitic diodes caused by scratches on the back surface are generated. Since the current flows, the power loss of the power converter increases.
  • FIG. 15 is a plan view of a circuit board used by the inventors of the present invention for studying the present invention.
  • IGBT chips 8 and four diode chips 9 are mounted on a circuit board 1 in which a metal pattern is formed on an insulating substrate.
  • an emitter main terminal 2 On the circuit board 1, an emitter main terminal 2, a collector main terminal 3, an emitter sense terminal 4, a collector sense terminal 5, and a gate sense terminal 6 are formed, and each is connected by an aluminum wire.
  • the IGBT and the diode are connected in parallel as in the equivalent circuit shown in FIG. For this reason, the current of the diode 9 is superimposed on the leakage current of the IGBT due to the scratch on the back surface, and it is difficult to detect a defect with high accuracy due to the scratch on the back surface.
  • the module yield deteriorates due to the characteristic inspection after the module assembly.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to detect an IGBT failure after mounting on a circuit board and improve the power module assembly yield.
  • the above-described problem is solved by providing the IGBT with a structure that electrically connects the drift layer to the outside while the gate is off.
  • the yield of the power module can be improved.
  • FIG. 1 The top view of the IGBT chip
  • an emitter electrode EMT is formed at the center of the chip, and a gartling TER is formed so as to surround the emitter electrode EMT.
  • a gate electrode GTE is formed inside the girling TER, and a channel stopper electrode CHM is formed at a corner portion of the chip outside the gartling TER.
  • FIG. 3 is a cross-sectional view taken along the line A-A ′ in FIG.
  • a hole emitter layer PE is formed in contact with the collector electrode COL, and an n-type buffer layer NB and an n-type drift layer ND are sequentially formed.
  • a trench gate TG is formed in the n-type drift layer ND, and a first region and a second region are formed across the trench gate TG.
  • a p-type base layer PB and an n-type source layer NS are formed in contact with the emitter electrode EMT.
  • the p-type floating layer PF is formed in a state of being separated from the trench gate.
  • FIG. 3 is a cross-sectional view taken along the line A-A ′ in FIG.
  • the IGBT of this embodiment has a gate wiring GL, a field plate FP, and a p-type well layer PW.
  • a guard ring is formed by a pair of the field plate FP and the p-type well layer PW. By providing a plurality of p-type well layers PW apart from each other, a plurality of guard rings are provided.
  • the gate wiring GL and the field plate FP are covered with the surface protective film PAS.
  • a channel stopper layer CHS is formed outside the voltage blocking region constituted by the guard ring along the outer periphery of the IGBT chip, similarly to the guard ring.
  • the voltage blocking region is configured by the guard ring, but the voltage blocking region may be formed by a junction termination extension (JTE) structure.
  • JTE junction termination extension
  • the channel stopper electrode CHM which is an electrode pad for making contact with the channel stopper layer CHS through the contact hole provided in the surface protective film PAS, is provided.
  • the channel stopper electrode CHM is electrically connected to the n-type drift layer ND.
  • a method for manufacturing the IGBT chip of Example 1 will be described with reference to FIGS.
  • phosphorus ions are implanted into one surface of a Si substrate (thickness: about 350 nm) by ion implantation to form an n-type buffer layer NB having a depth of about 20 ⁇ m, and boron ions are implanted into the other surface of the Si substrate.
  • a p-type well layer PW having a depth of about 10 ⁇ m is formed.
  • an oxide film OX is formed on the surface (FIG. 4A).
  • a trench having a depth of about 5 ⁇ m is formed by dry etching, and a gate insulating film (film thickness of about 100 nm) is formed by thermal annealing. Thereafter, a polysilicon film PLY is buried by a known CVD (Chemical Vapor Deposition) method to form a pair of trench gates TG (FIG. 4B).
  • CVD Chemical Vapor Deposition
  • a p-type base layer PB (layer thickness of about 3 ⁇ m) is formed by ion implantation, and then an arsenic ion is implanted to form an n-type source layer NS and a channel stopper layer CHS having a depth of about 1 ⁇ m.
  • an interlayer insulating film INT film thickness of about 1 ⁇ m
  • contact holes CNT are formed by a photo-etching method (FIG. 4C).
  • the emitter electrode EMT, the gate wiring GL, the field plate FP, the channel stopper electrode CHM, and the collector electrode COL are formed (FIG. 4D).
  • the pad portion is opened to complete the IGBT chip (FIG. 3).
  • FIG. 2 The top view of the circuit board concerning Example 1 of the present invention is shown.
  • IGBT chips 8 and four diode chips 9 are mounted on a circuit board 1 in which a metal pattern is formed on an insulating substrate.
  • an emitter main terminal 2 On the circuit board 1, an emitter main terminal 2, a collector main terminal 3, an emitter sense terminal 4, a collector sense terminal 5, and a gate sense terminal 6 are formed, and each is connected by an aluminum wire 10.
  • the circuit board 1 and the IGBT chip 8 and the diode chip 9 are joined by soldering.
  • a channel stopper sense terminal 7 is formed, and the channel stopper electrode CHM of each IGBT chip 8 and the channel stopper sense terminal 7 are connected by an aluminum wire 10.
  • the n-type drift layers ND of the IGBT chips 8 are electrically connected to each other via the channel stopper electrode CHM of each IGBT chip 8 and the channel stopper sense terminal 7.
  • FIG. 2 A method of detecting defects due to scratches on the back surface of the IGBT chip on the circuit board on which the IGBT of this embodiment shown in FIG. 2 is mounted will be described.
  • the gate sense terminal 6 is connected to the ground to turn off the gate of the IGBT, and the emitter sense terminal 4 and the emitter main terminal 2 are opened.
  • the current between the collector sense terminal 5 or the collector main terminal 3 and the channel stopper sense terminal 7 corresponding to the leak current is monitored. Based on the result of current monitoring, a defect due to a scratch on the back surface of the IGBT chip is detected.
  • An equivalent circuit for this detection is shown in FIG. Since the emitter sense terminal 4 and the emitter main terminal 2 are open, no current flows through the diode 9.
  • the assembly method of the power module equipped with the IGBT of this embodiment will be described with reference to the flowchart shown in FIG.
  • the IGBT chip and the diode chip manufactured by the method shown in FIGS. 4A to 4D are mounted on the circuit board by soldering (S601), and wire bonding is performed (S602). Then, the presence or absence of defects due to scratches on the back surface of the IGBT chip is selected (S603), and the passed circuit board is mounted on an AlSiC base serving as a heat sink (S604). After wire bonding is performed on the sense terminal (S605), terminal bonding is performed (S606), a lid is attached (S607), and the power module is completed.
  • a channel stopper electrode CHM is provided on the IGBT chip, and the current flowing between the collector electrode COL and the channel stopper electrode CHM is monitored, so that the back surface of the IGBT chip is mounted after the IGBT chip is mounted on the circuit board. It is possible to detect defects due to scratches with high accuracy. As a result, the defect rate in the inspection after the power module is assembled can be reduced and the yield can be improved.
  • FIG. 7 shows a plan view of an IGBT chip according to the second embodiment of the present invention.
  • the plan view of the IGBT chip is different from that of FIG. 1 in that channel stopper electrodes CHM are provided at four corners of the chip.
  • FIG. 8 is a plan view of a circuit board according to the second embodiment.
  • a channel stopper sense terminal 7 is also formed on the left side of the circuit board, and the channel stopper electrode CHM located at the upper left of the leftmost IGBT chip and the channel stopper sense terminal 7 are connected by an aluminum wire 10. Further, the upper channel stopper electrodes CHM of each IGBT chip are connected by an aluminum wire 10.
  • the leakage current can be monitored also from the channel stopper electrode CHM on the upper side of the IGBT chip, the resistance of the path through which the leakage current flows can be reduced, and the defect can be detected with higher accuracy.
  • FIG. 9 shows a plan view of a circuit board in the third embodiment.
  • the channel stopper sense terminals 7 are formed on the left and right sides of the circuit board, and the channel stopper electrodes CHM and the channel stopper sense terminals 7 located on the upper sides of the IGBT chips on the right and left ends are respectively connected by aluminum wires 10.
  • the leakage current can be monitored from both the left and right sides using the upper channel stopper electrode CHM of the IGBT chip, it becomes possible to detect a defect with higher accuracy than in the second embodiment.
  • FIG. 10 is a plan view of an IGBT chip according to the fourth embodiment of the present invention.
  • channel stopper electrodes CHM are formed at two corners adjacent to each other.
  • FIG. 11 is a plan view of a circuit board in the fourth embodiment. The channel stopper electrode CHM and the channel stopper sense terminal 7 are connected at only one place, and the channel stopper electrode CHM of each IGBT chip is connected by the aluminum wire 10.
  • the area of the channel stopper sense terminal 7 can be reduced, the area of the chip can be further increased. Therefore, since the ON voltage of each of the IGBT and the diode can be reduced, the loss of the power converter can be reduced.
  • the channel stopper electrode CHM only needs to be formed at two adjacent corners, so that the chip management number and other monitor terminals can be arranged in the remaining corner portions.
  • FIG. 12 shows an example of a power module in the fifth embodiment of the present invention.
  • One power module is composed of four circuit boards, and the circuit boards shown in the first to fourth embodiments can be applied. These circuit boards are connected in parallel, and power modules having different current capacities can be provided by changing the number of parallel circuit boards.
  • the channel stopper sense terminal, the collector main terminal, and the collector sense terminal were separated, but when they were assembled in the power module, these terminals were electrically connected with aluminum wires. It has become.
  • FIG. 13 shows an example in which the power module of the present invention is applied to a power converter.
  • the power converter according to the present embodiment includes a pair of DC terminals P terminal 200 and N terminal 201, U terminals 210, V terminals 211, W terminals 212 that are the same number of AC terminals as the number of phases of AC output, It is connected between a pair of DC terminals and has a configuration in which two parallel circuits of IGBTs (101 to 106), which are power switching elements, and diodes (111 to 116) of opposite polarity are connected in series.
  • the IGBT chips of Embodiments 1 to 3 can be used, and a power converter with low power consumption and high reliability is provided by reducing on-voltage, suppressing latch-up, and reducing switching noise. it can.
  • the thickness of the Si substrate is about 350 nm, but the thickness is not limited to this, and an arbitrary thickness can be selected according to the power capacity.
  • a silicon carbide substrate may be used to obtain a higher breakdown voltage IGBT.
  • the gate is a trench type, it may be a planar gate type.
  • the n-type buffer layer NB may be deeper than 20 ⁇ m or shallow. When it is deeper than 20 ⁇ m, more holes remain on the collector side during turn-off, so that oscillation can be suppressed. In addition, when the thickness is less than 20 ⁇ m, the n-type drift layer ND can be thickened, so that the breakdown voltage is improved.
  • the channel stopper sense terminal 7 is formed on the left side of the circuit board, but is not limited to this and may be on the right side of the circuit board.
  • the channel stopper electrodes CHM are provided at the four corners of the chip, but may be provided at three locations. In this case, chip management numbers and other monitor terminals can be arranged in the remaining corners.
  • the aluminum chip is used for connection between the IGBT chip and the diode chip and each terminal, but a copper wire or a copper ribbon may be used. Since copper has a higher thermal conductivity than aluminum, chip temperature rise can be suppressed.
  • ND n-type drift layer
  • NB n-type buffer layer
  • NS n-type source layer
  • PE hole emitter layer
  • PB p-type base layer
  • PW p-type well layer
  • PF p-type floating layer
  • CHS Channel stopper layer
  • TG trench gate
  • PLY polysilicon film
  • OX oxide film
  • INT interlayer insulating film
  • CNT contact hole
  • PAS surface protective film
  • EMT emitter electrode
  • COL collector electrode
  • GTE gate Electrode
  • GL gate wiring
  • CHM channel stopper electrode
  • FP field plate
  • TER guard ring
  • 1 circuit board
  • 2 emitter main terminal
  • 3 collector main terminal
  • 4 emitter sense terminal
  • 5 collector sense Terminal: 6: Gate sense terminal
  • 7 Channel stopper sense terminal
  • 8 IGBT chip
  • 9 Diode chip
  • 10 Aluminum wire, 101-106: IGBT, 111-116: Diode, 121-126: Gate circuit,

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  • Power Engineering (AREA)
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Abstract

　ＩＧＢＴチップの裏面のキズを検出する機会としては，ＩＧＢＴチップが完成した後と，ＩＧＢＴチップを回路基板に実装した後の２つがある。ＩＧＢＴチップが完成した後に検査をしても，チップ検査後から回路基板に実装するまでの間に裏面のキズが発生することもあるため，回路基板への実装後も検査を行うことが望ましい。　本発明では，ゲートがオフの状態でドリフト層を外部と電気的に接続する構造をＩＧＢＴに設けることで，回路基板への実装後にＩＧＢＴの不良を検出し，パワーモジュール組立歩留りを向上させることができる。

Description

ＩＧＢＴ，パワーモジュール，パワーモジュールの製造方法，および電力変換装置
　本発明は，ＩＧＢＴ，パワーモジュール，パワーモジュールの製造方法，および電力変換装置に係り，特にＩＧＢＴの実装時の歩留まり向上に関する。
　絶縁ゲートバイポーラトランジスタ（ＩＧＢＴ）は，ゲート電極に加える電圧でコレクタ電極とエミッタ電極の間に流す電流を制御するスイッチング素子である。制御できる電力は数十ワットから数十万ワットに及び，スイッチング周波数も数十ヘルツから百キロヘルツ超と幅広い。この特徴を生かして，エアコンや電子レンジなどの家庭用の省電力機器から，電気自動車や鉄道，製鉄所用のインバータまで広く使われている。
　特許文献１には，複数のガードリングと，該複数のガードリングに個別に形成された複数の導体と，該複数の導体を一体的に覆う高抵抗の半絶縁膜と，該ガードリングよりも外周側に形成された導電率モニターおよび界面電荷量モニターと，を有するＩＧＢＴが示されている。ここでガードリングとは，ＩＧＢＴチップの外周部分に環状のｐｎ接合を形成するための半導体層であり，コレクタ－エミッタ間に高電圧が印加されたとき，ＩＧＢＴ素子内部の空乏層をチップの外周方向に延伸させることにより高耐圧を実現する。特許文献１に記載されているＩＧＢＴでは，導電率モニターと，界面電荷量モニターとで，高抵抗の半絶縁膜の特性の測定ができる。
特開２０１２－４４２８号公報
　図１４は，本願発明者らが本願発明をするにあたって検討に用いた縦型ＩＧＢＴの断面構造である。図１４に示したＩＧＢＴは，コレクタ電極ＣＯＬに接してホールエミッタ層ＰＥが形成され，さらにｎ型バッファ層ＮＢとｎ型ドリフト層ＮＤが順次形成されている。ｎ型ドリフト層ＮＤ内に一対のトレンチゲートＴＧが形成されており，トレンチゲートＴＧを挟んで第１領域と第２領域が形成されている。第１領域では，エミッタ電極ＥＭＴと接してｐ型ベース層ＰＢおよびｎ型ソース層ＮＳが形成されている。また第２領域では，トレンチゲートと離間した状態でｐ型フローティング層ＰＦが形成されている。
　図１４に示したように縦型ＩＧＢＴ素子は，基板の両面に電極を形成する必要があり，その取り扱いに細心の注意が必要である。特に，ゲート酸化膜は静電気などで絶縁破壊を起こし易いため，ゲート電極の形成面を表側，コレクタ電極の形成面を裏側として取り扱うことが多い。この場合，裏側となるコレクタ電極は，検査工程やケース搬送などで冶具と接触することが多く，稀にキズなどが発生することがある。裏面にキズが発生し，裏面のホールエミッタ層ＰＥが欠損してしまうと，表面のｐ型ベース層ＰＢ，ｎ型ドリフト層ＮＤ，およびｎ型バッファ層ＮＢからなる寄生ダイオードが形成されてしまう。ここで，電力変換装置に搭載されたＩＧＢＴがターンオフ動作をする際，対アームのＩＧＢＴはフォワードリカバリ動作をするため，コレクタ電極に対しエミッタ電極に正電圧が印加される。裏面にキズが発生し，裏面のホールエミッタ層ＰＥが欠損したＩＧＢＴが搭載された電力変換装置の場合，コレクタ電極に対しエミッタ電極に正電圧が印加されると，裏面のキズにより生じる寄生ダイオードに電流が流れるために，電力変換装置の電力損失が増加してしまう。
　ＩＧＢＴチップの裏面のキズを検出する機会としては，ＩＧＢＴチップが完成した後と，ＩＧＢＴチップを回路基板に実装した後の２つがある。ＩＧＢＴチップが完成した後に検査をしても，チップ検査後から回路基板に実装するまでの間に裏面のキズが発生することもあるため，回路基板への実装後も検査を行うことが望ましい。
　図１５は，本願発明者らが本願発明をするにあたって検討に用いた回路基板の平面図である。図１５の回路基板では．絶縁基板上に金属パタンが形成された回路基板１上に，４つのＩＧＢＴチップ８と４つのダイオードチップ９が搭載されている。
　回路基板１には，エミッタ主端子２，コレクタ主端子３，エミッタセンス端子４，コレクタセンス端子５，およびゲートセンス端子６が形成されており，それぞれがアルミワイヤにより接続されている。ＩＧＢＴチップ８の裏面のキズを検出するためには，エミッタ端子とコレクタ端子との間の電流をモニタする必要があるが，図１５に示した回路基板では，エミッタ端子，コレクタ端子のそれぞれが，ダイオード９のアノード電極，カソード電極と電気的に接続されているため，図１６に示した等価回路のようにＩＧＢＴとダイオードが並列に接続された状態となっている。このため，裏面のキズに起因したＩＧＢＴのリーク電流にダイオード９の電流が重畳されてしまい，裏面のキズによる不良の高精度な検出が困難であった。その結果，モジュール組立後の特性検査で不良となってしまい，モジュール歩留りが低下してしまう問題があった。
　本発明は，上記のような課題に鑑みてなされたものであって，その目的は，回路基板への実装後にＩＧＢＴの不良を検出し，パワーモジュール組立歩留りを向上させることである。
　本発明では，ゲートがオフの状態でドリフト層を外部と電気的に接続する構造をＩＧＢＴに設けることで，上述の課題を解決する。
　本発明によれば，ＩＧＢＴチップを回路基板に実装した状態で不良の有無を選別できるため，パワーモジュールの歩留りを向上させることができる。
本発明の実施例１に係るＩＧＢＴチップの平面図である。 本発明の実施例１に係る回路基板の平面図である。 本発明の実施例１に係るＩＧＢＴチップの要部構成を示す断面図である。 本発明の実施例１に係るＩＧＢＴチップの製造工程を示す断面図である。 本発明の実施例１に係るＩＧＢＴチップの製造工程を示す断面図である。 本発明の実施例１に係るＩＧＢＴチップの製造工程を示す断面図である。 本発明の実施例１に係るＩＧＢＴチップの製造工程を示す断面図である。 本発明の実施例１に係るＩＧＢＴ不良検出方法を示す等価回路である。 本発明の実施例１に係るパワーモジュールの製造工程を示すフローチャートである。 本発明の実施例２及び３に係るＩＧＢＴチップの平面図である。 本発明の実施例２に係る回路基板の平面図である。 本発明の実施例３に係る回路基板の平面図である。 本発明の実施例４に係るＩＧＢＴチップの平面図である。 本発明の実施例４に係る回路基板の平面図である。 本発明の実施例５に係る半導体装置の平面図である。 本発明の実施例６に係る電力変換装置の回路構成図である。 本願発明者らが検討に用いたＩＧＢＴチップの要部構成を示す断面図である。 本願発明者らが検討に用いた回路基板の平面図である。 本願発明者らが検討に用いた回路基板を用いたＩＧＢＴ不良検出方法を示す等価回路である。
　本発明の実施例を図面を参照しながら説明する。なお，各図および各実施例において，同一または類似の構成要素には同じ符号を付し，説明を省略する。
　図１に．本発明の実施例１に係るＩＧＢＴチップの平面図を示す。図１のＩＧＢＴチップでは，チップ中央部にエミッタ電極ＥＭＴが形成されており，エミッタ電極ＥＭＴを取り囲むようにガートリングＴＥＲが形成されている。さらにガートリングＴＥＲの内側にゲート電極ＧＴＥが形成されており，ガートリングＴＥＲの外側のチップのコーナー部にチャネルストッパ電極ＣＨＭが形成されている。
　図３は図１中，Ａ－Ａ’の断面図である。図３に示したように，本実施例のＩＧＢＴは，コレクタ電極ＣＯＬに接してホールエミッタ層ＰＥが形成され，さらにｎ型バッファ層ＮＢとｎ型ドリフト層ＮＤが順次形成されている。ｎ型ドリフト層ＮＤ内にトレンチゲートＴＧが形成されており，トレンチゲートＴＧを挟んで第１領域と第２領域が形成されている。第１領域では，エミッタ電極ＥＭＴと接してｐ型ベース層ＰＢおよびｎ型ソース層ＮＳが形成されている。また第２領域では，トレンチゲートと離間した状態でｐ型フローティング層ＰＦが形成されている。また，図３に示したように，本実施例のＩＧＢＴは，ゲート配線ＧＬと，フィールドプレートＦＰと，ｐ型ウェル層ＰＷと，を有する。フィールドプレートＦＰとｐ型ウェル層ＰＷの対で，ガードリングが形成される。ｐ型ウェル層ＰＷが離間して複数設けられることにより，ガードリングは複数設けられる。ゲート配線ＧＬおよびフィールドプレートＦＰは，表面保護膜ＰＡＳで覆われている。ガードリングで構成される電圧阻止領域の外側には，ガードリングと同様にＩＧＢＴチップの外周に沿って，チャネルストッパ層ＣＨＳが形成されている。本実施例では，ガードリングで電圧阻止領域を構成しているが，接合終端拡張（ＪＴＥ）構造で電圧阻止領域を形成してもよい。そして，本実施例のＩＧＢＴチップでは，表面保護膜ＰＡＳに設けられているコンタクト穴を介してチャネルストッパ層ＣＨＳとコンタクトをとるための電極パッドである，チャネルストッパ電極ＣＨＭが設けられている。チャネルストッパ電極ＣＨＭは，ｎ型ドリフト層ＮＤと電気的に接続されている。
　図４（ａ）～（ｄ）を用いて実施例１のＩＧＢＴチップの製造方法を説明する。まず始めに，イオン打ち込みによりＳｉ基板（厚さ約３５０ｎｍ）の一方の表面にリンイオンを打ち込み，深さ約２０μｍのｎ型バッファ層ＮＢを形成し，Ｓｉ基板の他方の表面にボロンのイオン打ち込みにより，深さ約１０μｍのｐ型ウェル層ＰＷを形成する。ｐ型ウェル層ＰＷの形成の際に，表面には酸化膜ＯＸが形成される（図４（ａ））。
　アクティブ領域およびチャネルストッパ領域において酸化膜ＯＸを除去した後，ドライエッチング法により深さ約５μｍの溝を形成し，熱アニールによりゲート絶縁膜（膜厚約１００ｎｍ）を形成する。その後，公知のＣＶＤ（Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ）法によりポリシリコン膜ＰＬＹを埋め込み，一対のトレンチゲートＴＧを形成する（図４（ｂ））。
　イオン打ち込みにより，ｐ型ベース層ＰＢ（層厚約３μｍ）を形成し，その後，ヒ素イオンを打ち込み深さ約１μｍのｎ型ソース層ＮＳおよびチャネルストッパ層ＣＨＳを形成する。酸化シリコン膜からなる層間絶縁膜ＩＮＴ（膜厚約１μｍ）を形成した後，ホトエッチング法によりコンタクトホールＣＮＴを形成する（図４（ｃ））。
　イオン打ち込みによりホールエミッタ層ＰＥを形成した後，エミッタ電極ＥＭＴ，ゲート配線ＧＬ，フィールドプレートＦＰ，チャネルストッパ電極ＣＨＭ及びコレクタ電極ＣＯＬを形成する（図４（ｄ））。表面保護膜ＰＡＳを形成した後，パッド部を開口し，ＩＧＢＴチップが完成する（図３）。
　図２に．本発明の実施例１に係る回路基板の平面図を示す。図２の回路基板では．絶縁基板上に金属パタンが形成された回路基板１上に，４つのＩＧＢＴチップ８と４つのダイオードチップ９が搭載されている。回路基板１には，エミッタ主端子２，コレクタ主端子３，エミッタセンス端子４，コレクタセンス端子５，およびゲートセンス端子６が形成されており，それぞれがアルミワイヤ１０により接続されている。回路基板１と，ＩＧＢＴチップ８およびダイオードチップ９とは，はんだ付けにより接合されている。さらに図２の回路基板では，チャネルストッパセンス端子７が形成されており，各ＩＧＢＴチップ８のチャネルストッパ電極ＣＨＭとチャネルストッパセンス端子７がアルミワイヤ１０により接続されている。これにより，各ＩＧＢＴチップ８のｎ型ドリフト層ＮＤ同士が，各ＩＧＢＴチップ８のチャネルストッパ電極ＣＨＭと，チャネルストッパセンス端子７とを介して電気的に接続される。
　図２に示した本実施例のＩＧＢＴを搭載した回路基板での，ＩＧＢＴチップの裏面のキズによる不良の検出方法を説明する。図２に示すように，ゲートセンス端子６はアースに接続してＩＧＢＴのゲートをオフとし，エミッタセンス端子４およびエミッタ主端子２はオープン状態にする。そして，リーク電流に相当する，コレクタセンス端子５またはコレクタ主端子３と，チャネルストッパセンス端子７との間の電流をモニタする。電流のモニタの結果に基づいて，ＩＧＢＴチップの裏面のキズによる不良の検出を行う。本検出の際の等価回路を図５に示す。エミッタセンス端子４とエミッタ主端子２はオープン状態のため，ダイオード９には電流が流れない。ＩＧＢＴのゲートはオフなので，さらにＩＧＢＴのエミッタ－コレクタ間にも電流が流れないため，ＩＧＢＴチップ８の裏面のキズに起因したリーク電流を，コレクタ主端子３またはコレクタセンス端子５と，チャネルストッパセンス端子７との間を流れる電流から高精度に検出することが可能である。
　本実施例のＩＧＢＴを搭載したパワーモジュールの組立方法を図６に示すフローチャートを用いて説明する。図４（ａ）～（ｄ）に示す方法で製造したＩＧＢＴチップおよびダイオードチップをはんだ付けで回路基板に接合することで実装し（Ｓ６０１），ワイヤボンディングを施す（Ｓ６０２）。その後，ＩＧＢＴチップの裏面のキズによる不良の有無を選別し（Ｓ６０３），合格した回路基板をヒートシンクとなるＡｌＳｉＣベースに実装する（Ｓ６０４）。センス端子にワイヤボンディングを施した後（Ｓ６０５），端子接合を行い（Ｓ６０６），蓋を取り付けて（Ｓ６０７）パワーモジュールが完成する。
　本実施例に依れば，ＩＧＢＴチップにチャネルストッパ電極ＣＨＭを設け，コレクタ電極ＣＯＬとチャネルストッパ電極ＣＨＭの間に流れる電流をモニタすることにより，回路基板へのＩＧＢＴチップの実装後にＩＧＢＴチップの裏面のキズによる不良を高精度に検出可能である。これにより，パワーモジュール組立後の検査での不良率を低減し，歩留りを向上させることができる。
　本発明第２の実施形態におけるＩＧＢＴチップの平面図を図７に示す。ＩＧＢＴチップの平面図が図１と異なる点は，チャネルストッパ電極ＣＨＭがチップの４隅に設けられている点である。図８に第２の実施形態における回路基板の平面図を示す。チャネルストッパセンス端子７が回路基板の左側にも形成されており，左端のＩＧＢＴチップの左上に位置するチャネルストッパ電極ＣＨＭとチャネルストッパセンス端子７がアルミワイヤ１０で接続されている。さらに各ＩＧＢＴチップの上側のチャネルストッパ電極ＣＨＭ同士がアルミワイヤ１０で接続されている。
　本実施例に依れば，ＩＧＢＴチップの上側のチャネルストッパ電極ＣＨＭからもリーク電流をモニタできるため，リーク電流が流れる経路の抵抗を小さくでき，より高精度な不良の検出が可能となる。
　本発明第３の実施形態におけるＩＧＢＴチップの平面図は図７と同様である。図９に第３の実施例における回路基板の平面図を示す。チャネルストッパセンス端子７が回路基板の左右両側に形成されており，右左両端のＩＧＢＴチップの上側に位置するチャネルストッパ電極ＣＨＭとチャネルストッパセンス端子７がそれぞれアルミワイヤ１０で接続されている。
　本実施例に依れば，ＩＧＢＴチップの上側のチャネルストッパ電極ＣＨＭを用いて左右両側からリーク電流をモニタできるため，実施例２よりもさらに高精度に不良の検出が可能となる。
　本発明第４の実施形態におけるＩＧＢＴチップの平面図を図１０に示す。本実施例では，チャネルストッパ電極ＣＨＭが隣り合うコーナー２箇所に形成されている。図１１に第４の実施例における回路基板の平面図を示す。チャネルストッパ電極ＣＨＭとチャネルストッパセンス端子７の接続箇所が１箇所のみになっており，各ＩＧＢＴチップのチャネルストッパ電極ＣＨＭがアルミワイヤ１０で接続されている。
　本実施例に依れば，チャネルストッパセンス端子７の面積を小さくできるため，チップの面積をより大きくすることができる。これにより，ＩＧＢＴ，ダイオードそれぞれのオン電圧を小さくできるため，電力変換装置の損失を小さくできる。
　また，本実施例に依れば，チャネルストッパ電極ＣＨＭは隣り合うコーナー２箇所に形成されていれば良いため，残りのコーナー部にチップ管理番号や，他のモニタ端子を配置することができる。
　図１２は本発明第５の実施例におけるパワーモジュールの一例を示す。回路基板４枚で１つのパワーモジュールを構成しており，回路基板は実施例１から４に示したものを適用できる。これらの回路基板は並列に接続されており，並列数を変えることによって電流容量の異なるパワーモジュールを提供することができる。なお，回路基板の検査の際は，チャネルストッパセンス端子とコレクタ主端子およびコレクタセンス端子は分離されていたが，パワーモジュールに組み込む際は，これらの端子はアルミワイヤで電気的に接続された状態となっている。
　図１３は本発明のパワーモジュールを電力変換装置に適用した一例を示す。本実施例の電力変換装置は，一対の直流端子であるＰ端子２００，Ｎ端子２０１と，交流出力の相数と同数の交流端子であるＵ端子２１０，Ｖ端子２１１，Ｗ端子２１２と，前記一対の直流端子間に接続され，それぞれ電力スイッチング素子であるＩＧＢＴ（１０１～１０６）と，逆極性のダイオード（１１１～１１６）の並列回路を２個直列接続した構成からなる。本実施例では，実施例１から実施例３のＩＧＢＴチップを用いることができ，オン電圧の低減，ラッチアップの抑制およびスイッチングノイズの低減により，消費電力が小さく信頼性が高い電力変換装置を提供できる。
　実施例１において，Ｓｉ基板の厚さは約３５０ｎｍとしたがこれに限るものではなく，電力容量に応じて任意の厚さを選ぶことができる。また，Ｓｉ基板ではなく，より高耐圧のＩＧＢＴを得るために炭化珪素基板を用いてもよい。ゲートはトレンチ型としたが，プレーナゲート型であっても良い。ｎ型バッファ層ＮＢは２０μｍより深くしてもよいし，浅くしてもよい。２０μｍより深くした場合，ターンオフ時により多くのホールがコレクタ側に残存するため発振を抑制できる。また，２０μｍより浅くした場合，ｎ型ドリフト層ＮＤを厚くできるため耐圧が向上する。
　実施例２において，チャネルストッパセンス端子７は回路基板左側に形成したが，これに限るものではなく回路基板の右側であっても良い。また，実施例２および３において，チャネルストッパ電極ＣＨＭはチップの４隅に設けられているとしたが，３箇所であってもよい。この場合，残りのコーナー部にチップ管理番号や，他のモニタ端子を配置することができる。実施例１～４において，ＩＧＢＴチップおよびダイオードチップと各端子との接続はアルミワイヤを用いたが，銅ワイヤや銅リボンであっても良い。銅はアルミよりも熱伝導率が高いため，チップの温度上昇を抑制できる。
　ＮＤ：ｎ型ドリフト層，ＮＢ：ｎ型バッファ層，ＮＳ：ｎ型ソース層，ＰＥ：ホールエミッタ層，ＰＢ：ｐ型ベース層，ＰＷ：ｐ型ウェル層，ＰＦ：ｐ型フローティング層，ＣＨＳ：チャネルストッパ層，ＴＧ：トレンチゲート，ＰＬＹ：ポリシリコン膜，ＯＸ：酸化膜，ＩＮＴ：層間絶縁膜，ＣＮＴ：コンタクトホール，ＰＡＳ：表面保護膜，ＥＭＴ：エミッタ電極，ＣＯＬ：コレクタ電極，ＧＴＥ：ゲート電極，ＧＬ：ゲート配線，ＣＨＭ：チャネルストッパ電極，ＦＰ：フィールドプレート，ＴＥＲ：ガードリング，１：回路基板，２：エミッタ主端子，３：コレクタ主端子，４：エミッタセンス端子，５：コレクタセンス端子，６：ゲートセンス端子，７：チャネルストッパセンス端子，８：ＩＧＢＴチップ，９：ダイオードチップ，１０：アルミワイヤ，１０１～１０６：ＩＧＢＴ，１１１～１１６：ダイオード，１２１～１２６：ゲート回路，２００：Ｐ端子，２０１：Ｎ端子，２１０：Ｕ端子，２１１：Ｖ端子，２１２：Ｗ端子，３００：モータ。

Claims (15)

  1. 　回路基板に接合されている複数のＩＧＢＴを有し、
    　前記複数のＩＧＢＴのドリフト層が、前記複数のＩＧＢＴの各ゲートがオフの状態で、互いに電気的に接続されることを特徴とするパワーモジュール。
  2. 　請求項１に記載のパワーモジュールにおいて、
    　前記回路基板は、各ＩＧＢＴのドリフト層を各ゲートがオフの状態で電気的に接続する端子を備えていることを特徴とするパワーモジュール。
  3. 　請求項２に記載のパワーモジュールにおいて、
    　前記端子は、各ＩＧＢＴに設けられている電極パッドを介して各ＩＧＢＴのドリフト層と電気的に接続されていることを特徴とするパワーモジュール。
  4. 　請求項３に記載のパワーモジュールにおいて、
    　各ＩＧＢＴの前記電極パッドは、各ＩＧＢＴのコーナー部に配置されていることを特徴とするパワーモジュール。
  5. 　請求項１に記載のパワーモジュールにおいて、
    　前記複数のＩＧＢＴの内の少なくとも一つは、シリコン基板を有することを特徴とするパワーモジュール。
  6. 　請求項１に記載のパワーモジュールにおいて、
    　前記複数のＩＧＢＴの内の少なくとも一つは、炭化珪素基板を有することを特徴とするパワーモジュール。
  7. 　請求項１に記載のパワーモジュールが上アームまたは下アームの少なくともいずれかを構成する電力変換装置。
  8. 　ゲートがオフの状態でドリフト層と電気的に接続される電極パッドを有するＩＧＢＴを準備し、
    　回路基板に前記ＩＧＢＴを接合し、
    　前記ＩＧＢＴのコレクタと前記電極パッド間の電流を検出することを特徴とするパワーモジュールの製造方法。
  9. 　請求項８に記載のパワーモジュールの製造方法において、
    　前記検出の結果に基づいて前記ＩＧＢＴの不良を検知することを特徴とするパワーモジュールの製造方法。
  10. 　請求項９に記載のパワーモジュールの製造方法において、
    　前記検知の結果良品と判定されたＩＧＢＴが接合されている回路基板をヒートシンクに実装することを特徴とするパワーモジュールの製造方法。
  11. 　ゲートがオフの状態でドリフト層と電気的に接続される電極パッドを有するＩＧＢＴ。
  12. 　請求項１１に記載のＩＧＢＴにおいて、
    　前記電極パッドは、前記ＩＧＢＴのチャネルストッパ層を介して前記ドリフト層に電気的に接続されていることを特徴とするＩＧＢＴ。
  13. 　請求項１１に記載のＩＧＢＴにおいて、
    　前記電極パッドは、前記ＩＧＢＴのコーナー部に配置されていることを特徴とするＩＧＢＴ。
  14. 　請求項１１に記載のＩＧＢＴにおいて、
    　シリコン基板を有することを特徴とするＩＧＢＴ。
  15. 　請求項１１に記載のＩＧＢＴにおいて、
    　炭化珪素基板を有することを特徴とするＩＧＢＴ。
PCT/JP2014/055219 2014-03-03 2014-03-03 Ｉｇｂｔ，パワーモジュール，パワーモジュールの製造方法，および電力変換装置 WO2015132847A1 (ja)

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