JP2020150181A - 炭化珪素半導体装置の選別方法 - Google Patents
炭化珪素半導体装置の選別方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 140
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 139
- 239000004065 semiconductor Substances 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims description 44
- 239000012535 impurity Substances 0.000 claims description 15
- 229920006395 saturated elastomer Polymers 0.000 claims description 5
- 238000005259 measurement Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 60
- 230000007547 defect Effects 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000010187 selection method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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Abstract
Description
図1は、実施の形態にかかる炭化珪素半導体装置の選別方法を示すフローチャートである。以下では、炭化珪素半導体装置として、MOSFETを例に説明するが、MOSゲート構造を有する他の炭化珪素半導体装置でも同様である。最初に、実施の形態にかかる炭化珪素半導体装置について説明する。図2は、実施の形態にかかる炭化珪素半導体装置の構造を示す断面図である。
2、102 n-型炭化珪素エピタキシャル層
3、103 第1p+型ベース領域
4、104 第2p+型ベース領域
5、105 n型高濃度領域
6、106 p型ベース層
7、107 n++型ソース領域
8、108 p++型コンタクト領域
9、109 ゲート絶縁膜
10、110 ゲート電極
11、111 層間絶縁膜
12、112 ソース電極
13、113 裏面電極
14、114 バリアメタル
15、115 ソース電極パッド
16、116 トレンチ
17、117 n+型領域
18、118 n型バッファ層
18a n型低濃度バッファ層
18b n型高濃度バッファ層
50、150 トレンチ型MOSFET
Claims (5)
- MOSゲート構造を有する炭化珪素半導体装置の選別方法であって、
前記炭化珪素半導体装置のオン電圧を測定する第1工程と、
前記炭化珪素半導体装置の内蔵ダイオードに順方向電流を流す第2工程と、
前記順方向電流を流した後の前記炭化珪素半導体装置のオン電圧を測定する第3工程と、
前記第1工程で測定したオン電圧と前記第3工程で測定したオン電圧とから前記炭化珪素半導体装置のオン電圧の変化率を算出する第4工程と、
前記算出した変化率が3%より低い前記炭化珪素半導体装置を選別する第5工程と、
を含むことを特徴とする炭化珪素半導体装置の選別方法。 - 前記第1工程および前記第3工程では、定格電流または、定格電流よりも低い電流で前記オン電圧を測定することを特徴とする請求項1に記載の炭化珪素半導体装置の選別方法。
- 前記炭化珪素半導体装置は、
炭化珪素基板のおもて面に設けられた第1導電型の第1半導体層と、
前記第1半導体層の、前記炭化珪素基板側に対して反対側に設けられた第2導電型の第2半導体層と、
前記第2半導体層の内部に選択的に設けられた、前記炭化珪素基板よりも不純物濃度の高い第1導電型の第1半導体領域と、
前記第2半導体層を貫通して、前記第1半導体層に達するトレンチと、
前記トレンチの内部にゲート絶縁膜を介して設けられているゲート電極と、
前記第1半導体領域と前記第2半導体層の表面に設けられた第1電極と、
前記炭化珪素基板の裏面に設けられた第2電極と、
を備えることを特徴とする請求項1または2に記載の炭化珪素半導体装置の選別方法。 - 前記第1工程および前記第3工程では、前記第1電極から前記第2電極に電流を流して、前記オン電圧を測定することを特徴とする請求項3に記載の炭化珪素半導体装置の選別方法。
- 前記第5工程では、前記算出した変化率が飽和し、かつ、前記算出した変化率が3%より低い前記炭化珪素半導体装置を選別することを特徴とする請求項1〜4のいずれか一つに記載の炭化珪素半導体装置の選別方法。
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JP2019047714A JP7293749B2 (ja) | 2019-03-14 | 2019-03-14 | 炭化珪素半導体装置の選別方法 |
CN202010106325.3A CN111766490A (zh) | 2019-03-14 | 2020-02-21 | 碳化硅半导体装置的筛选方法 |
DE102020105508.0A DE102020105508A1 (de) | 2019-03-14 | 2020-03-02 | Verfahren zum bestimmen, ob eine siliciumcarbid-halbleitervorrichtung ein konformes produkt ist |
US16/806,614 US11262399B2 (en) | 2019-03-14 | 2020-03-02 | Method of determining whether a silicon-carbide semiconductor device is a conforming product |
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WO2023058491A1 (ja) * | 2021-10-05 | 2023-04-13 | 学校法人関西学院 | 炭化ケイ素の積層欠陥を低減する方法及びその方法により作製された構造 |
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DE112022000179T5 (de) | 2021-03-24 | 2023-07-27 | Hitachi Power Semiconductor Device, Ltd. | Energiezufuhrkontrollvorrichtung, verfahren zur herstellung einer halbleitervorrichtung und energiezufuhrverfahren |
GB2619415A (en) * | 2021-03-24 | 2023-12-06 | Hitachi Power Semiconductor Device Ltd | Electric connection inspection device, and manufacturing method and electric connection method for semiconductor device |
WO2023058491A1 (ja) * | 2021-10-05 | 2023-04-13 | 学校法人関西学院 | 炭化ケイ素の積層欠陥を低減する方法及びその方法により作製された構造 |
WO2024127939A1 (ja) * | 2022-12-14 | 2024-06-20 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
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