WO2015118772A1 - 負荷駆動回路 - Google Patents
負荷駆動回路 Download PDFInfo
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- WO2015118772A1 WO2015118772A1 PCT/JP2014/082606 JP2014082606W WO2015118772A1 WO 2015118772 A1 WO2015118772 A1 WO 2015118772A1 JP 2014082606 W JP2014082606 W JP 2014082606W WO 2015118772 A1 WO2015118772 A1 WO 2015118772A1
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- circuit
- load
- diagnostic
- pseudo
- abnormality
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/005—Testing of electric installations on transport means
- G01R31/006—Testing of electric installations on transport means on road vehicles, e.g. automobiles or trucks
- G01R31/007—Testing of electric installations on transport means on road vehicles, e.g. automobiles or trucks using microprocessors or computers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60R—VEHICLES, VEHICLE FITTINGS, OR VEHICLE PARTS, NOT OTHERWISE PROVIDED FOR
- B60R16/00—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for
- B60R16/02—Electric or fluid circuits specially adapted for vehicles and not otherwise provided for; Arrangement of elements of electric or fluid circuits specially adapted for vehicles and not otherwise provided for electric constitutive elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/005—Testing of electric installations on transport means
- G01R31/006—Testing of electric installations on transport means on road vehicles, e.g. automobiles or trucks
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/40—Testing power supplies
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0009—Devices or circuits for detecting current in a converter
Definitions
- the present invention relates to a load drive circuit with a built-in diagnostic circuit incorporated in an on-vehicle electronic control device.
- ⁇ For vehicle control, there are cases where driving elements such as solenoids, relays, heaters, and motors are driven by switching between conduction and non-conduction of drive elements by PWM or frequency drive.
- driving elements such as solenoids, relays, heaters, and motors are driven by switching between conduction and non-conduction of drive elements by PWM or frequency drive.
- a load driving circuit has been provided with a diagnostic circuit for diagnosing the state of a load to be driven, and the state of the load is diagnosed by measuring a predetermined physical quantity in the load driving circuit. is doing. In some cases, such a diagnostic circuit continuously diagnoses whether an abnormality has occurred in the state of a drive load during vehicle operation.
- the diagnostic circuit when a failure occurs in such a diagnostic circuit, the diagnostic circuit itself is not a function for controlling the vehicle, so it does not affect the operation of the vehicle, and a passenger on the vehicle may not notice the failure. Conceivable.
- the vehicle control system may not be able to detect the occurrence of the failure unless the diagnostic circuit has a function for detecting the occurrence of the failure. In other words, when a failure occurs in the diagnostic circuit, there is a possibility of a potential failure that cannot be recognized by the occupant or detected by the vehicle control system.
- the diagnostic circuit When an abnormality occurs in the driving load when the diagnostic circuit is faulty, the diagnostic circuit cannot detect the abnormality of the load, and also protects the load driving circuit from the abnormality of the load. The function cannot be activated. In other words, if a fault occurs in the diagnostic circuit and a double fault occurs in the load, the protection function cannot be activated. In the worst case, the load drive circuit may be damaged. is there.
- a drive stop signal is input from a control circuit that controls the drive circuit during the system initialization process after turning on the ignition key of the vehicle or the system stop process after turning off the ignition key of the vehicle.
- the normal operation of the diagnostic circuit for diagnosing the load state is confirmed while the load drive circuit is incorporated in the electronic control unit.
- the ignition key when the ignition key is turned on or off, it is checked whether there is a failure in the diagnostic circuit. If a failure occurs while the vehicle is running, it takes time to find the failure. If an abnormality occurs in the state of the drive load, the load drive circuit may be damaged due to a double failure, and load control may not be possible.
- An object of the present invention is to check whether or not an abnormality has occurred in a diagnostic circuit in a load drive circuit by injecting a pseudo-abnormal signal without affecting load drive control during vehicle operation.
- the purpose of the above is to provide a diagnostic circuit by injecting a pseudo abnormal signal into the diagnostic circuit when, for example, the load is being controlled and the diagnostic circuit is not diagnosing a load abnormality. This can be achieved by diagnosing whether or not an abnormality has occurred.
- the present invention it is possible to determine whether or not a diagnostic circuit in a load drive circuit has failed by injecting a pseudo abnormal signal for each load drive cycle without affecting the load drive control. It is.
- FIG. 1 is a flowchart showing a procedure for confirming whether or not a failure has occurred in the diagnostic circuit based on the state of the drive element.
- step S10 shown in FIG. 1 it is determined based on the state of the drive element whether or not the diagnostic circuit needs to diagnose a load abnormality.
- the diagnostic circuit diagnoses whether or not an abnormality has occurred in the load. If the diagnostic circuit does not detect that an abnormality has occurred in the load (step S21: No), it determines that the load state is normal and returns to S10 determination. When the diagnosis circuit detects that an abnormality has occurred in the load (step S21: Yes), it activates an operation such as protecting the load drive circuit from an abnormality that has occurred as necessary, and further detects an abnormality. Is notified to a main controller such as a microcomputer. The main control device shifts the vehicle to a predetermined operation in accordance with the location where the abnormality has occurred, the type of abnormality that has occurred, and the like.
- the diagnostic circuit does not need to diagnose whether an abnormality has occurred in the load. Therefore, during the period when the diagnostic circuit does not need to diagnose, whether or not the diagnostic circuit can inject a pseudo-abnormal signal corresponding to the physical quantity generated in the abnormal state of the load into the diagnostic circuit, and the diagnostic circuit can detect it as a load abnormality By confirming whether or not there is a failure in the diagnostic circuit.
- the diagnostic circuit outputs a signal indicating that a load abnormality has been detected (step S31: Yes)
- it is determined that no failure has occurred in the diagnostic circuit and S10 is determined.
- step S31: No when a signal indicating that the diagnostic circuit has detected a failure is not output as a result of injecting the pseudo abnormal signal into the diagnostic circuit (step S31: No), it is determined that a failure has occurred in the diagnostic circuit, Notifies a main control device such as a microcomputer that a failure has occurred in the diagnostic circuit.
- the main control device shifts the vehicle to a predetermined operation such as lighting a failure warning lamp and notifying the driver according to the location of the diagnostic circuit where the failure has occurred.
- FIG. 2 shows a load drive circuit having a low-side driver configuration having a battery short-circuit detection function based on overcurrent detection as a diagnostic circuit.
- the load drive circuit 100 having a low-side driver configuration includes: A circuit provided downstream of the power source 103 and the load 101, A driving element MOSFET 19a and a pre-driver 12a for driving the driving element MOSFET 19a; A current detection resistor 18a for diagnosing the current flowing through the drive element MOSFET 19a; A differential amplifier circuit 14a for amplifying the voltage across the current detection resistor 18a; A battery short threshold voltage generation circuit 13a for determining a threshold value of whether or not an overcurrent occurs due to a battery short circuit; A comparison circuit 11a that compares the output voltage of the differential amplifier circuit 14a with the value of the battery short threshold voltage generation circuit 13a to determine whether or not an overcurrent has occurred; A battery short pseudo-abnormal signal generation circuit 17a for generating a voltage corresponding to a voltage generated at both ends of the current detection resistor 18a
- a clamp diode for driving element protection or a free-wheeling diode for circulating current may be included in the load driving circuit depending on the characteristics of the driving load.
- the diagnostic circuit for diagnosing a battery short circuit in FIG. 2 includes a current detection resistor 18a, a differential amplifier circuit 14a, a battery short threshold voltage generation circuit 13a, and a comparison circuit 11a.
- the control circuit 10 starts a protection operation such as transmitting a signal for stopping the current by turning off the drive element MOSFET 19a to the pre-driver 12a.
- the control circuit 10 transmits a signal for controlling the load drive to the pre-driver 12a, and the gate input signal N15 of the drive element MOSFET 19a shown in FIG. 3A is input to the drive element MOSFET 19a.
- the drive element MOSFET 19a While the gate input signal N15 is High, the drive element MOSFET 19a is in a conducting state, and the current shown in FIG. 3B flows through the current detection resistor 18a. At this time, a voltage drop occurs in the current detection resistor 18a, and the voltage difference between the upstream signal N11a and the downstream signal N11b of the current detection resistor 18a is as shown in FIG.
- the control circuit 10 controls the signal switching circuits 15a and 15b, and the upstream signal N11a of the current detection resistor 18a is output to the output signal N13a of the signal switching circuit 15a. Control is performed so that the downstream signal N11b of the detection resistor 18a is output to the output signal N13b of the signal switching circuit 15b.
- the drive element MOSFET 19a is in a non-conductive state.
- the battery short pseudo-abnormal signal generation circuit 17a generates a voltage signal of a level corresponding to the voltage generated in the upstream signal N11a and the downstream signal N11b of the current detection resistor 18a when an overcurrent due to the battery short occurs.
- the upstream side output signal N12a and the downstream side output signal N12b of the battery short pseudo abnormality signal generation circuit 17a are output to the signal switching circuits 15a and 15b, respectively.
- 3D shows a waveform of a voltage difference between the upstream output signal N12a and the downstream output signal N12b generated by the battery short pseudo abnormality signal generation circuit 17a.
- the control circuit 10 controls the signal switching circuits 15a and 15b while the gate input signal N15 is Low, and the upstream output signal N12a of the battery short pseudo abnormality signal generation circuit 17a is the output signal N13a of the signal switching circuit 15a.
- the downstream output signal N12b of the battery short pseudo abnormality signal generation circuit 17a is controlled to be output to the output signal N13b of the signal switching circuit 15b.
- the voltage difference between the signals input to the differential amplifier circuit 14a is shown in FIG.
- the differential amplifier circuit 14a amplifies the input waveform and outputs it to the output signal N16.
- a voltage waveform of the output signal N16 of the differential amplifier circuit 14a is shown in FIG.
- the output signal N16 of the differential amplifier circuit 14a is input to the comparison circuit 11a and compared with the voltage generated by the battery short threshold voltage generation circuit 13a that determines the threshold level for battery short determination.
- a signal N17 generated and output by the battery short threshold voltage generation circuit 13a is shown in FIG.
- the comparison circuit 11a determines that an overcurrent has occurred due to the battery short-circuit, and the control circuit 10 , High is output to the output signal N18.
- the battery short pseudo-abnormal signal generation circuit 17a Since the battery short pseudo-abnormal signal generation circuit 17a generates a voltage corresponding to the voltage generated at both ends of the current detection resistor 18a when an overcurrent occurs due to a battery short, the differential amplifier circuit 14a, the comparison circuit 11a, and the battery short If no failure has occurred in the threshold voltage generation circuit 13a, the signal switching circuits 15a and 15b, and the battery short pseudo abnormality signal generation circuit 17a, the comparison circuit 11a is connected to the control circuit 10 as shown in FIG. High is output.
- the comparison circuit 11a does not output High to the control circuit 10
- the differential amplifier circuit 14a the comparison circuit 11a
- the battery short threshold voltage generation circuit 13a the signal switching circuits 15a and 15b. It is determined that a failure has occurred in at least one of the battery short pseudo-abnormal signal generation circuit 17a.
- one pseudo abnormal signal is injected while the gate input signal N15 is Low, but one or more pseudo abnormal signals are injected and one or more diagnostic circuits are injected.
- the diagnostic circuit may determine that it is normal.
- the battery short pseudo-abnormal signal generation circuit 17a has at least two types of pseudo-abnormal signal P10 that should not detect a battery short and a pseudo-abnormal signal P11 that should detect a battery short.
- the pseudo-abnormal signal is injected, and the comparison circuit 11a does not detect the abnormality when the pseudo-abnormal signal P10 is injected, and the comparison circuit 11a detects the abnormality when the pseudo-abnormal signal P11 is injected. It can be determined that the threshold value exists between the voltage level of the pseudo abnormal signal P10 and the voltage level of the pseudo abnormal signal P11.
- the diagnostic circuit when a pseudo abnormal signal is injected in two consecutive periods T1 and T2, and the diagnosis circuit detects a failure due to the pseudo abnormal signal in two consecutive periods, the diagnostic circuit It may be determined to be normal. There may be two or more continuous cycles for injecting a pseudo abnormal signal and for the diagnostic circuit to detect a failure.
- the abnormality detection is masked by the control circuit 10 or the like because the abnormality is detected by injection of a pseudo-abnormal signal, and the load is driven. Control is performed so as not to affect the operation of the circuit.
- FIG. 5 relates to the second embodiment, and shows a load drive circuit having a low-side driver configuration having a ground short detection function and a load open detection function as a diagnostic circuit.
- the ground short detection means in the load drive circuit shown in FIG. 5 is such that when the drive element MOSFET 19a is in a non-conductive state and a ground short occurs due to an abnormality in the load 101, the drain signal N10a of the drive element MOSFET 19a is close to the ground potential. Therefore, the comparison circuit 11b compares the potential of the drain signal N10a of the drive element MOSFET 19a with the voltage generated by the ground short threshold voltage generation circuit 13b, and the potential of the drain signal N10a is generated by the ground short threshold voltage generation circuit 13b. It is determined that the load is in a ground short-circuit state when the voltage is lower than the operating voltage.
- the load open detection means in the load drive circuit shown in FIG. 5 is configured such that the constant current sources 20a and 20b are capacitors 102 in order to shift the potential of the drain signal N10a to a predetermined potential when the drive element MOSFET 19a is in a non-conductive state.
- the comparison circuit 11c compares the potential of the drain signal N10a with the voltage generated by the load open threshold voltage generation circuit 13c, and the potential of the drain signal N10a is compared with the load open threshold voltage generation circuit 13c. When the voltage to be generated is exceeded, it is determined that the load is in an open state.
- a clamp diode for protecting the drive element and a reflux diode for circulating the current may be included in the load drive circuit depending on the characteristics of the load to be driven.
- the control circuit 10 controls the signal switching circuits 15c and 15d to connect the drain signal N10a to the comparison circuits 11b and 11c.
- the potential of the drain signal N10a is compared with the generated voltage of the ground short threshold voltage generating circuit 13b and the load open threshold by which the comparator circuits 11b and 11c determine the threshold voltage for detecting each abnormality.
- the ground short circuit abnormality and the load open abnormality are diagnosed.
- the control circuit 10 controls the signal switching circuits 15c and 15d to generate a ground short pseudo-abnormal signal that generates a voltage corresponding to the voltage generated in the drain signal N10a when a ground short occurs.
- the generation voltage of the generation circuit 17b is connected to the comparison circuit 11b, and the generation voltage of the load open pseudo abnormal signal generation circuit 17c that generates a voltage corresponding to the voltage generated in the drain signal N10a when the load is open is connected to the comparison circuit 11c.
- the comparison circuit 11b compares the generated voltage of the ground short pseudo-abnormal signal generation circuit 17b with the generated voltage of the ground short threshold voltage generation circuit 13b, and the generated voltage of the ground short pseudo-abnormal signal generation circuit 17b is the ground short threshold.
- the abnormality detection is notified to the control circuit 10. Since the generated voltage of the ground short pseudo-abnormal signal generation circuit 17b generates a voltage corresponding to the voltage generated in the drain signal N10a when a ground short occurs, the diagnosis is performed when the comparison circuit 11b detects an abnormality. It can be determined that the circuit is normal. On the other hand, if the comparison circuit 11b does not detect an abnormality, it is determined that a failure has occurred in the diagnostic circuit.
- the comparison circuit 11c compares the generated voltage of the load open pseudo abnormal signal generation circuit 17c with the generated voltage of the load open threshold voltage generation circuit 13c, and the generated voltage of the load open pseudo abnormal signal generation circuit 17c is the load open.
- the generated voltage of the threshold voltage generating circuit 13c exceeds the detected value, the abnormality detection is notified to the control circuit 10. Since the generated voltage of the load open pseudo-abnormal signal generation circuit 17c generates a voltage corresponding to the voltage generated in the drain signal N10a when the load open occurs, if the comparison circuit 11c detects an abnormality, the diagnosis is performed. It can be determined that the circuit is normal. On the other hand, when the comparison circuit 11c does not detect any abnormality, it is determined that a failure has occurred in the diagnostic circuit.
- the injection of the pseudo abnormal signal into the diagnostic circuit is performed by injecting one or more pseudo abnormal signals during the conduction period within one cycle of the drive element MOSFET 19a, and the diagnostic circuit detects one or more abnormalities. Sometimes the diagnostic circuit may determine that it is normal.
- the ground short pseudo-abnormal signal generation circuit 17b and the load open pseudo-abnormal signal generation circuit 17c have a pseudo-abnormal signal that should not be detected and a level that should be detected.
- the diagnostic circuit when a pseudo abnormal signal is injected at one or more continuous cycles, and a failure due to the pseudo abnormal signal is detected at one or more continuous cycles, the diagnostic circuit May be determined to be normal.
- the abnormality detection is masked by the control circuit 10 or the like because the abnormality is detected by injection of a pseudo abnormality signal, and the operation of the load driving circuit is affected. Control not to give.
- FIG. 6 relates to the third embodiment, and shows a load driving circuit having a high-side driver configuration having a battery short detection function, a load open detection function, and a ground short detection function as a diagnostic circuit.
- the battery short detection means in the load drive circuit shown in FIG. 6 is such that when the drive element MOSFET 19b is in a non-conductive state and a battery short occurs due to an abnormality in the load 101, the source signal N10b of the drive element MOSFET 19b is close to the battery potential. Therefore, the comparison circuit 11d compares the potential of the source signal N10b with the voltage output from the battery short threshold voltage generation circuit 13d, and the potential of the source signal N10b exceeds the voltage output from the battery short threshold voltage generation circuit 13d. If it is determined that the load is in a battery short-circuit state.
- the load open detection means in the load drive circuit shown in FIG. 6 is configured so that the constant current sources 20a and 20b are capacitors 102 in order to shift the potential of the source signal N10b to a predetermined potential when the drive element MOSFET 19b is in a non-conductive state.
- the comparison circuit 11e compares the potential of the source signal N10b with the voltage generated by the load open threshold voltage generation circuit 13c, and the potential of the source signal N10b is determined by the load open threshold voltage generation circuit 13c. When the output voltage is exceeded, the load is determined to be open.
- the ground short detection means by the overcurrent detection in the load drive circuit shown in FIG. 6 has a large current in the current detection resistor 18b when a ground short occurs due to an abnormality of the load 101 when the drive element MOSFET 19b is in a conductive state.
- the voltage difference between both ends of the flow current detection resistor 18b becomes large, the output voltage of the differential amplifier circuit 14b that amplifies the difference between both ends voltage rises, and the output voltage of the differential amplifier circuit 14b and the ground short threshold voltage generation
- the comparison circuit 11f compares the voltage generated by the circuit 13f, and determines that it is in the ground short state when the output voltage of the differential amplifier circuit 14b exceeds the voltage generated by the ground short threshold voltage generation circuit 13f.
- a clamp diode for protecting the drive element and a reflux diode for circulating the current may be included in the load drive circuit depending on the characteristics of the load to be driven.
- the control circuit 10 controls the signal switching circuits 15e and 15f to connect the source signal N10b to the comparison circuits 11d and 11e while the drive element MOSFET 19b is non-conductive. To do. During this period, the potential of the source signal N10b is compared with the generated voltage of the battery short threshold voltage generating circuit 13d and the load open threshold which determine the threshold voltages for detecting the abnormality by the comparison circuits 11d and 11e. By comparing with the generated voltage of the value voltage generating circuit 13e, the battery short circuit abnormality and the load open abnormality are diagnosed.
- control circuit 10 controls the signal switching circuits 15e and 15f during the conduction period of the drive element MOSFET 19b relating to the battery short-circuit and the load open, and generates a voltage corresponding to the voltage generated in the source signal N10b when the battery short-circuit occurs.
- the generated voltage of the battery short pseudo abnormal signal generation circuit 17d to be generated is connected to the comparison circuit 11d, and the generated voltage of the load open pseudo abnormal signal generation circuit 17e that generates a voltage corresponding to the voltage generated in the source signal N10b when the load is open Is connected to the comparison circuit 11e.
- the comparison circuit 11d compares the generated voltage of the battery short pseudo abnormality signal generation circuit 17d with the generation voltage of the battery short threshold voltage generation circuit 13d, and the generation voltage of the battery short pseudo abnormality signal generation circuit 17d is the battery short threshold value.
- the battery short detection is notified to the control circuit 10. Since the generated voltage of the battery short pseudo-abnormal signal generation circuit 17d generates a voltage corresponding to the voltage generated in the source signal N10b when a battery short-circuit occurs, diagnosis is performed when the comparison circuit 11d detects an abnormality. It can be determined that the circuit is normal. On the other hand, if the comparison circuit 11d does not detect any abnormality, it is determined that a failure has occurred in the diagnostic circuit.
- the comparison circuit 11e compares the generated voltage of the load open pseudo abnormal signal generation circuit 17e with the generated voltage of the load open threshold voltage generation circuit 13e, and the generated voltage of the load open pseudo abnormal signal generation circuit 17e is the load open.
- the generated voltage of the threshold voltage generating circuit 13e is exceeded, the abnormality detection is notified to the control circuit 10.
- the generated voltage of the load open pseudo-abnormal signal generation circuit 17e generates a voltage corresponding to the voltage generated in the source signal N10b when the load open occurs. Therefore, if the comparison circuit 11e detects an abnormality, the diagnosis is performed. It can be determined that the circuit is normal. On the other hand, when the comparison circuit 11e does not detect an abnormality, it is determined that a failure has occurred in the diagnostic circuit.
- the control circuit 10 controls the signal switching circuits 15g and 15h to connect the upstream signal and the downstream signal of the current detection resistor 18b to the differential amplifier circuit 14b. To do. Due to the ground short circuit, a large current flows through the current detection resistor 18b, and the voltage difference between both ends of the current detection resistor 18b increases, and the output voltage of the differential amplifier circuit 14b that amplifies the difference between both ends voltage rises. When the voltage generated by the threshold voltage generation circuit 13f is exceeded, it is determined that an overcurrent has occurred due to a ground short and is notified to the control circuit 10. Receiving the notification of the occurrence of the ground short, the control circuit 10 transmits a signal for stopping the current by turning off the drive element MOSFET 19b to the pre-driver 12b.
- the control circuit 10 controls the signal switching circuits 15g and 15h, and is generated on the upstream side and the downstream side of the current detection resistor 18b when an overcurrent occurs due to a ground short.
- the generated voltage of the ground short pseudo-abnormal signal generation circuit 17f that generates a voltage corresponding to the voltage to be connected is connected to the differential amplifier circuit 14b.
- the comparison circuit 11f compares the generated voltage of the ground short pseudo-abnormal signal generation circuit 17f amplified by the differential amplifier circuit 14b with the generated voltage of the ground short threshold voltage generation circuit 13f, and amplifies it by the differential amplifier circuit 14b.
- the generated voltage of the ground short pseudo abnormality signal generation circuit 17f exceeds the generation voltage of the ground short threshold voltage generation circuit 13f, the abnormality detection is notified to the control circuit 10.
- the generated voltage of the ground short pseudo-abnormal signal generation circuit 17f generates a voltage corresponding to the voltage generated on the upstream side and the downstream side of the current detection resistor 18b when the ground short circuit occurs. If detected, it can be determined that the diagnostic circuit is normal. On the other hand, if the comparison circuit 11f detects no abnormality, it is determined that a failure has occurred in the diagnostic circuit.
- the injection of the pseudo abnormal signal into the diagnostic circuit is performed by injecting one or more pseudo abnormal signals during the conduction period within one cycle of the drive element MOSFET 19b, and the diagnostic circuit detects one or more abnormal conditions. Sometimes the diagnostic circuit may determine that it is normal.
- the battery short pseudo abnormality signal generation circuit 17d, the load open pseudo abnormality signal generation circuit 17e, and the ground short pseudo abnormality signal generation circuit 17f should not detect abnormality.
- a threshold for anomaly detection exists between the two types of pseudo anomaly signal levels. It is possible to determine that
- the diagnostic circuit when a pseudo abnormal signal is injected at one or more continuous cycles, and a failure due to the pseudo abnormal signal is detected at one or more continuous cycles, the diagnostic circuit May be determined to be normal.
- the abnormality detection is masked by the control circuit 10 or the like, and control is performed so as not to affect the operation of the load driving circuit.
- FIG. 7 relates to the fourth embodiment, and has a half-bridge configuration load including a high-side drive element MOSFET 19c and a low-side drive element MOSFET 19d having a battery short detection function and a ground short detection function by overcurrent detection as a diagnostic circuit.
- a drive circuit is shown.
- the load driving element of the load driving circuit shown in FIG. 7 is configured such that a current flows from the power source 103 to the load 101 by making the high-side driving element MOSFET 19c conductive and the low-side driving element MOSFET 19d non-conductive.
- the MOSFET 19c is made non-conductive and the low-side drive element MOSFET 19d is made conductive so that a reflux current by the energy stored in the load 101 flows. That is, the high-side drive element MOSFET 19c and the low-side drive element MOSFET 19d drive the load 101 without being in a conductive state at the same time.
- the ground short detection means in the load drive circuit shown in FIG. 7 is configured so that when the high side drive element MOSFET 19c is in a conductive state and the low side side drive element MOSFET 19d is in a nonconductive state, A large current flows through the detection resistor 18c, and the voltage difference between both ends of the current detection resistor 18c increases, and the output voltage of the differential amplifier circuit 14c that amplifies the difference between both ends voltage rises, and the output voltage of the differential amplifier circuit 14c increases.
- the comparison circuit 11g compares the voltage generated by the ground short threshold voltage generation circuit 13g, and when the output voltage of the differential amplifier circuit 14c exceeds the voltage generated by the ground short threshold voltage generation circuit 13g, It is determined that it is an overcurrent state due to.
- the battery short detection means in the load drive circuit shown in FIG. 7 is a case where a battery short circuit occurs due to an abnormality in the load 101 when the high side drive element MOSFET 19c is in a non-conductive state and the low side drive element MOSFET 19d is in a conductive state.
- a large current flows through the current detection resistor 18d, and the voltage difference between both ends of the current detection resistor 18d increases, and the output voltage of the differential amplifier circuit 14d that amplifies the difference between both ends voltage rises, and the output of the differential amplifier circuit 14d increases.
- the comparison circuit 11h compares the voltage and the voltage generated by the battery short threshold voltage generation circuit 13h, and the output voltage of the differential amplifier circuit 14d exceeds the voltage generated by the battery short threshold voltage generation circuit 13h. It is determined that the battery is in an overcurrent state due to a short circuit.
- the load open detection means in the load drive circuit shown in FIG. 7 is configured such that when the drive element MOSFET 19d is non-conductive and the drive element MOSFET 19c is conductive, the current flowing through the current detection resistor 18c has a predetermined current value. It is also possible to determine that the load is in an open state when the value is lower than.
- the control circuit 10 controls the signal switching circuits 15i and 15j to connect the upstream signal and the downstream signal of the current detection resistor 18c to the differential amplifier circuit 14c. To do. Due to the ground short circuit, a large current flows through the current detection resistor 18c, and the voltage difference between both ends of the current detection resistor 18c increases, and the output voltage of the differential amplifier circuit 14c that amplifies the difference between both ends voltage rises. When the voltage generated by the threshold voltage generation circuit 13g is exceeded, it is determined that an overcurrent has occurred due to a ground short and is notified to the control circuit 10. Upon receiving the notification of the occurrence of the ground short, the control circuit 10 transmits a signal for stopping the current by turning off the high-side drive element MOSFET 19b to the pre-driver 12c.
- the control circuit 10 controls the signal switching circuits 15i and 15j, and when an overcurrent occurs due to a ground short, the upstream side and the downstream side of the current detection resistor 18c.
- the generated voltage of the ground short pseudo-abnormal signal generation circuit 17e that generates a voltage corresponding to the voltage generated on the side is connected to the differential amplifier circuit 14c.
- the comparison circuit 11g compares the generated voltage of the ground short pseudo-abnormal signal generation circuit 17e amplified by the differential amplifier circuit 14c with the generated voltage of the ground short threshold voltage generation circuit 13g, and amplifies it by the differential amplifier circuit 14c.
- the generated voltage of the ground short pseudo abnormal signal generation circuit 17e exceeds the generated voltage of the ground short threshold voltage generation circuit 13g, the abnormality detection is notified to the control circuit 10.
- the generated voltage of the ground short pseudo-abnormal signal generation circuit 17e generates a voltage corresponding to the voltage generated on the upstream side and the downstream side of the current detection resistor 18c when the ground short circuit occurs, so that the comparison circuit 11g is abnormal. If detected, it can be determined that the diagnostic circuit is normal. On the other hand, when the comparison circuit 11g does not detect an abnormality, it is determined that a failure has occurred in the diagnostic circuit.
- the overcurrent diagnostic circuit including the current detection resistor 18d is configured to detect either flow of overcurrent.
- the control circuit 10 controls the signal switching circuits 15k and 15m so that the upstream signal (here, the drain side of the drive element MOSFET 19d) and the downstream side of the current detection resistor 18d.
- a signal here, the drive element MOSFET 19d source side
- Due to the battery short-circuit a large current flows through the current detection resistor 18d, and the voltage difference between both ends of the current detection resistor 18d increases, and the output voltage of the differential amplifier circuit 14d that amplifies the difference between the both-end voltages rises.
- the control circuit 10 When the voltage generated by the threshold voltage generation circuit 13h is exceeded, it is determined that an overcurrent has occurred due to a battery short-circuit, and the control circuit 10 is notified. Upon receiving the notification of the occurrence of the ground short, the control circuit 10 transmits a signal for stopping the current by making the low-side drive element MOSFET 19d non-conductive to the pre-driver 12d.
- the control circuit 10 controls the signal switching circuits 15k and 15m to generate on the upstream side and the downstream side of the current detection resistor 18d when an overcurrent occurs due to a battery short circuit.
- the generated voltage of the battery short pseudo-abnormal signal generation circuit 17f that generates a voltage corresponding to the voltage to be connected is connected to the differential amplifier circuit 14d.
- the comparison circuit 11h compares the generated voltage of the battery short pseudo-abnormal signal generation circuit 17f amplified by the differential amplifier circuit 14d with the generated voltage of the battery short threshold voltage generation circuit 13h, and amplifies it by the differential amplifier circuit 14d.
- the generated voltage of the battery short pseudo abnormality signal generation circuit 17f exceeds the generation voltage of the battery short threshold voltage generation circuit 13h, the abnormality detection is notified to the control circuit 10.
- the generated voltage of the battery short pseudo-abnormal signal generation circuit 17f generates a voltage corresponding to the voltage generated on the upstream side and the downstream side of the current detection resistor 18d when the battery short circuit occurs. If detected, it can be determined that the diagnostic circuit is normal. On the other hand, when the comparison circuit 11h does not detect an abnormality, it is determined that a failure has occurred in the diagnostic circuit.
- the battery short pseudo abnormality signal generation circuit 17f includes at least two types (an overcurrent flowing from the drain to the source of the drive element MOSFET 19d and an overcurrent flowing from the source to the drain).
- a pseudo-abnormal signal is generated, and the differential amplifier circuit 14d includes a bias circuit if necessary, and the comparison circuit 11h has two comparison circuit configurations including two different threshold voltage generation circuits if necessary. .
- the load open detection means in the load drive circuit shown in FIG. 7 is a current detection resistor when the high side drive element MOSFET 19c is conductive and the low side drive element MOSFET 19d is nonconductive. It is also possible to determine that the load is open when the current flowing through 18c falls below a predetermined current value. That is, when the high-side drive element MOSFET 19c is non-conductive and the low-side drive element MOSFET 19d is conductive, a pseudo abnormal voltage corresponding to the voltage generated in the current detection resistor 18d when the load is open is injected into the load open detection means. Thus, it is determined whether or not a failure has occurred in the diagnostic circuit that diagnoses the load open.
- the injection of the pseudo abnormal signal into the diagnostic circuit is performed by injecting one or more pseudo abnormal signals during the conduction period within one cycle of the control signals of the drive element MOSFETs 19c and d, and the diagnostic circuit generates one or more abnormal signals. When this is detected, the diagnostic circuit may determine that it is normal.
- the battery short pseudo-abnormal signal generation circuit 17f and the ground short pseudo-abnormal signal generation circuit 17e detect the pseudo-abnormal signal and abnormality that should not be detected.
- the threshold for detecting an abnormality exists between the two types of pseudo-abnormal signal levels. It is.
- the diagnostic circuit when a pseudo abnormal signal is injected at one or more continuous cycles, and a failure due to the pseudo abnormal signal is detected at one or more continuous cycles, the diagnostic circuit May be determined to be normal.
- the abnormality detection is masked by the control circuit 10 or the like, and control is performed so as not to affect the operation of the load driving circuit.
- FIG. 8 relates to the fifth embodiment, and shows a load drive circuit having a low-side driver configuration having a battery short-circuit detection function based on overcurrent detection as a diagnostic circuit.
- the load driving circuit 100 shown in FIG. A circuit provided downstream of the power source 103 and the load 101, A driving element MOSFET 19e and a pre-driver 12a for driving the driving element MOSFET 19e; A current detection resistor 18e for monitoring the current flowing through the drive element MOSFET 19e;
- the differential amplifier circuit 23 has at least two types of gains, a predetermined gain and a gain higher than the predetermined gain, and these two types of gains can be changed.
- a battery short threshold voltage generation circuit 13i for determining a threshold value of whether or not an overcurrent occurs due to a battery short circuit;
- a comparison circuit 11i for comparing the output voltage of the differential amplifier circuit 23 capable of changing the gain and the value of the battery short threshold voltage generation circuit 13i to determine whether or not an overcurrent has occurred;
- a drive control circuit 21 for controlling the drive element MOSFET 19e for load drive control; Provided separately from the drive control circuit 21 and drives a signal connected to the pre-driver 12a and a diagnostic drive control circuit 22 for controlling the drive element MOSFET 19e to check whether or not an abnormality has occurred in the battery short detection circuit.
- a signal switching circuit 15n for switching between the control circuit 21 and the diagnostic drive control circuit 22, The control circuit 10 controls these operations.
- a clamp diode for driving element protection or a free-wheeling diode for circulating current may be included in the load driving circuit depending on the characteristics of the driving load.
- the diagnostic circuit for diagnosing a battery short circuit in FIG. 8 includes a current detection resistor 18e, a differential amplifier circuit 23 capable of changing the gain, a battery short threshold voltage generation circuit 13i, and a comparison circuit 11i.
- the diagnostic circuit for diagnosing a battery short circuit causes a large current to flow through the current detection resistor 18e and a voltage difference between both ends of the current detection resistor 18e when the battery short circuit occurs due to an abnormality in the load 101 when the drive element MOSFET 19e is in a conductive state.
- the output voltage of the differential amplifier circuit 23 that amplifies the voltage difference between both ends rises and exceeds the voltage determined by the battery short threshold voltage generation circuit 13i, it is determined that an overcurrent has occurred due to a battery short circuit.
- the control circuit 10 Upon receiving the notification of the occurrence of the battery short circuit, the control circuit 10 transmits a signal for stopping the current by making the drive element MOSFET 19e non-conductive to the pre-driver 12e.
- FIG. 9A shows an output signal N101 of the drive control circuit 21 for controlling the drive element MOSFET 19e for load driving.
- FIG. 9B shows the output signal N102 of the diagnostic drive control circuit 22.
- the diagnostic drive control circuit 22 When the drive control circuit 21 outputs Low and the drive element MOSFET 19e is in a non-conductive state, the diagnostic drive control circuit 22 generates a signal having frequency and duty characteristics that satisfy the conditions described later, and outputs an output signal. N102 is output.
- the control circuit 10 confirms a state where the drive element MOSFET 19e should be turned on or off for load drive control, and switches the signal switching circuit 15n according to the state.
- the signal switching circuit 15n outputs the output of the drive control circuit 21 to the pre-driver 12e when the drive element MOSFET 19e is in a conductive state, and the diagnostic drive control circuit when the drive element MOSFET 19e is in a nonconductive state. 22 output to the pre-driver 12e.
- the output signal N103 of the signal switching circuit 15n connected to the pre-driver 12e is as shown in FIG. 9C under the control of the signal switching circuit 15n, and the drive element MOSFET 19e is driven at the timing of the waveform of FIG. 9C.
- the gain of the differential amplifier circuit 23 is set to a predetermined gain necessary for load drive control when the drive element MOSFET 19e is to be turned on, and the drive element MOSFET 19e is turned off.
- the gain is set to be higher than the predetermined gain.
- a delay time is provided at the switching timing in order to prevent erroneous detection of overcurrent due to a discharge current of energy stored in the load.
- FIG. 9E shows the current flowing through the current detection resistor 18e.
- the drive control circuit 21 outputs High and the drive element MOSFET 19e is conducting, it is necessary to pass a current sufficient to drive the load, and therefore, High is output for a necessary period.
- the diagnostic drive control circuit 22 controls the drive element MOSFET 19e during the period in which the drive control circuit 21 outputs Low, the frequency and duty are set so as to be less than or equal to the amount of current that does not drive the load. .
- the period during which the diagnostic drive control circuit 22 controls the drive element MOSFET 19e is a period in which the drive element MOSFET 19e must be made non-conductive for load control, but the load is not driven by adjusting the frequency and duty during this period.
- a current equal to or less than the amount of current is passed, and this current is injected as a pseudo-abnormal signal into a diagnostic circuit that diagnoses a battery short-circuit by overcurrent detection, thereby confirming whether or not a failure has occurred in the diagnostic circuit. Since the negative overcurrent flowing during this period does not affect the load drive control, the diagnostic drive control circuit 22 determines the frequency of the output signal so that the load current control is less than the current amount that does not drive the load and the desired current amount. Adjust to duty.
- the gain higher than the predetermined gain of the differential amplifying circuit 23 capable of changing the gain is set to such a value that the load current controlled by the diagnostic drive control circuit 22 can be used as a pseudo abnormal signal. That is, the load current controlled by the diagnostic drive control circuit 22 is converted into a voltage by the current detection resistor 18e, and the differential amplifier 23 amplifies the voltage. As a result, the output of the differential amplifier 23 becomes the battery short threshold.
- the gain is set so that the voltage exceeds the generated voltage of the voltage generating circuit 13i.
- FIG. 9H shows the generated voltage of the battery short threshold voltage generating circuit 13i.
- the gain higher than the predetermined gain of the differential amplifier circuit 23 is that the output voltage of the differential amplifier circuit 23 is generated by the battery short threshold voltage generation circuit 13i when a current equal to or less than the current amount that does not drive the load flows. Since the voltage is set to exceed the voltage, the comparison circuit 11e detects the occurrence of overcurrent and notifies the control circuit 10 of the occurrence.
- FIG. 9G shows an output waveform of the comparison circuit 11e.
- the comparison circuit 11e does not detect a failure, at least of the diagnostic circuit comprising the current detection resistor 18e, the differential amplifier circuit 23 capable of changing the gain, the battery short threshold voltage generation circuit 13i, and the comparison circuit 11i. It is determined that a failure has occurred at one location.
- the MOSFET 19e is controlled by the diagnostic drive signal, and the negative overcurrent flowing at that time is injected into the battery short diagnosis circuit as a pseudo-abnormal signal, thereby including the current detection resistor. Diagnosis is possible.
- the injection of the pseudo abnormal signal into the diagnostic circuit is performed by injecting one or more pseudo abnormal signals during the conduction period within one cycle of the control signal of the drive element MOSFET 19e, and the diagnostic circuit detects one or more abnormalities. In this case, the diagnostic circuit may determine that it is normal.
- the diagnostic drive control circuit 22 has at least two types of pseudo abnormal signals, ie, a current that should not be detected abnormally and a current that should be detected abnormally. It is possible to determine that a threshold for detecting an abnormality exists between two types of pseudo abnormal signal levels.
- the diagnostic circuit when a pseudo abnormal signal is injected at one or more continuous cycles, and a failure due to the pseudo abnormal signal is detected at one or more continuous cycles, the diagnostic circuit May be determined to be normal.
- the abnormality detection is masked by the control circuit 10 or the like, and control is performed so as not to affect the operation of the load driving circuit.
- a pseudo abnormal signal is injected into the diagnostic circuit to check whether or not a failure has occurred in the diagnostic circuit.
- the method can also be applied to a function of detecting an overcurrent of the switching regulator.
- the switching element of the switching regulator repeats a conduction state and a non-conduction state, and diagnoses an overcurrent when it is in a conduction state, but there is no need to diagnose an overcurrent because no current flows when it is in a non-conduction state. It is possible to determine whether or not a fault has occurred in the overcurrent diagnosis function by injecting a pseudo-abnormal signal corresponding to the signal generated at the time of overcurrent in this state into a diagnostic circuit that diagnoses overcurrent. It is.
- Control circuits 11a to 11i Comparison circuits 12a to 12e: Pre-driver 13a: Battery short threshold voltage generation circuit (low-side driver configuration) 13b: Ground short threshold voltage generation circuit (low-side driver configuration) 13c: Load open threshold voltage generation circuit (low-side driver configuration) 13d: Battery short threshold voltage generation circuit (high-side driver configuration) 13e: Load open threshold voltage generation circuit (high side driver configuration) 13f: Ground short threshold voltage generation circuit (high-side driver configuration) 13g: Ground short threshold voltage generation circuit (half-bridge configuration) 13h: Battery short threshold voltage generation circuit (half-bridge configuration) 14a to 14d: differential amplifier circuits 15a to 15n: signal switching circuit 17a: battery short pseudo-abnormal signal generation circuit (low side driver configuration) 17b: Ground short pseudo-abnormal signal generation (low-side driver configuration) 17c: Load open pseudo abnormal signal generation (low side driver configuration) 17d: Battery short pseudo-abnormal signal generation (high side driver configuration) 17e: Load open pseudo abnormal signal generation (
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Abstract
Description
ローサイドドライバ構成の負荷駆動回路100は、
電源103と負荷101の下流に設けられた回路であって、
駆動素子MOSFET19aとそれを駆動するためのプリドライバ12a、
駆動素子MOSFET19aに流れる電流を診断するための電流検出抵抗18a、
電流検出抵抗18aの両端電圧を増幅する差動増幅回路14a、
バッテリショートによる過電流発生か否かのしきい値を決めるバッテリショートしきい値電圧生成回路13a、
差動増幅回路14aの出力電圧とバッテリショートしきい値電圧生成回路13aとの値を比較し過電流発生か否かを判定する比較回路11a、
バッテリショートによる過電流発生時に電流検出抵抗18aの両端に発生する電圧に相当する電圧を生成するバッテリショート擬似異常信号生成回路17a、
差動増幅回路14aに入力する信号を電流検出抵抗18aの両端電圧かバッテリショート擬似異常信号生成回路17aかを切替える信号切替回路15aと15b、
これらの動作を制御する制御回路10から成る。
電源103と負荷101の下流に設けられた回路であって、
駆動素子MOSFET19eとそれを駆動するためのプリドライバ12a、
駆動素子MOSFET19eに流れる電流をモニタするための電流検出抵抗18e、
電流検出抵抗18eで電圧に変換した信号を増幅するために所定のゲインとその所定のゲインよりも高いゲインの少なくとも2種類のゲインを持ち、それら2種類のゲインが変更可能な差動増幅回路23、
バッテリショートによる過電流発生か否かのしきい値を決めるバッテリショートしきい値電圧生成回路13i、
ゲイン変更可能な差動増幅回路23の出力電圧とバッテリショートしきい値電圧生成回路13iとの値を比較し過電流発生か否かを判定する比較回路11i、
負荷駆動制御のために駆動素子MOSFET19eを制御する駆動制御回路21、
駆動制御回路21とは別に設けられ、バッテリショート検出回路に異常が発生しているか否かを確認するために駆動素子MOSFET19eを制御する診断用駆動制御回路22、プリドライバ12aに接続する信号を駆動制御回路21と診断用駆動制御回路22とを切替える信号切替回路15n、
これらの動作を制御する制御回路10から成る。
11a~11i : 比較回路
12a~12e : プリドライバ
13a : バッテリショートしきい値電圧生成回路(ローサイドドライバ構成)
13b : グランドショートしきい値電圧生成回路(ローサイドドライバ構成)
13c : 負荷オープンしきい値電圧生成回路(ローサイドドライバ構成)
13d : バッテリショートしきい値電圧生成回路(ハイサイドドライバ構成)
13e : 負荷オープンしきい値電圧生成回路(ハイサイドドライバ構成)
13f : グランドショートしきい値電圧生成回路(ハイサイドドライバ構成)
13g : グランドショートしきい値電圧生成回路(ハーフブリッジ構成)
13h : バッテリショートしきい値電圧生成回路(ハーフブリッジ構成)
14a~14d : 差動増幅回路
15a~15n : 信号切替回路
17a : バッテリショート擬似異常信号生成回路(ローサイドドライバ構成)
17b : グランドショート擬似異常信号生成(ローサイドドライバ構成)
17c : 負荷オープン擬似異常信号生成(ローサイドドライバ構成)
17d : バッテリショート擬似異常信号生成(ハイサイドドライバ構成)
17e : 負荷オープン擬似異常信号生成(ハイサイドドライバ構成)
17f : グランドショート擬似異常信号生成回路(ハイサイドドライバ構成)
17e : グランドショート擬似異常信号生成回路(ハーフブリッジ構成)
17g : バッテリショート擬似異常信号生成回路(ハーフブリッジ構成)
18a~18e : 電流検出抵抗
19a~19e : 駆動素子MOSFET
20a、20b : 定電流源
21 : 駆動制御回路
22 : 診断用駆動制御回路
23 : ゲイン変更可能な差動増幅回路
100 : 負荷駆動回路
101 : 負荷
102 : コンデンサ
103、104 : 電源
N10a : 駆動素子MOSFET19aのドレイン信号(ローサイド構成)
N10b : 駆動素子MOSFET19bのソース信号(ハイサイド構成)
N11a : 電流検出抵抗18aの上流側信号
N11b : 電流検出抵抗18aの下流側信号
N12a : バッテリショート擬似異常信号生成回路17aの上流側出力信号
N12b : バッテリショート擬似異常信号生成回路17aの下流側出力信号
N13a : 信号切替回路15aの出力信号
N13b : 信号切替回路15bの出力信号
N14 : 信号切替回路15aと15bの切替信号
N15 : 駆動素子MOSFET19aのゲート入力信号
N16 : 差動増幅回路14aの出力信号
N17 : バッテリショートしきい値電圧生成回路13aの出力信号
N18 : 比較回路11aの出力信号
N101 : 駆動制御回路21の出力信号
N102 : 診断用駆動制御回路22の出力信号
N103 : 信号切替回路15gの出力信号
N104 : ゲイン変更可能な差動増幅回路23の出力信号
N105 : バッテリショートしきい値電圧生成回路13iの出力信号
N106 : 比較回路11aの出力信号
P10 : 過電流検出すべきでは無いレベルの擬似異常信号
P11 : 過電流検出すべきレベルの擬似異常信号
Claims (13)
- 負荷を駆動する負荷駆動素子と、
前記負荷の異常を診断するために、検出対象となる物理量を測定し、測定した物理量を検出信号として出力する検出手段と、
前記検出手段が出力した信号に基づいて、前記負荷に異常が発生しているか否かを診断する診断回路と、を備え、
前記負荷駆動素子が導通状態と非導通状態かのいずれかの状態の時に、
前記負荷に異常が発生しているか否かを診断する、
ことを特徴とする負荷駆動回路。 - 請求項1に記載された負荷駆動回路において、
前記負荷に異常が発生した際に生じる物理量に相当する擬似異常信号を生成する擬似異常信号生成回路と、
前記診断回路に入力する信号を、前記検出手段が出力する検出信号または前記擬似異常信号生成回路に切替る信号切替回路、を備え、
前記診断回路に故障が発生しているか否かを判定する、
ことを特徴とする負荷駆動回路。 - 請求項1に記載された負荷駆動回路において、
前記負荷駆動素子を制御する駆動制御回路と、
前記駆動制御回路とは別に設けられ、前記負荷駆動素子を制御する診断用駆動制御回路と、
前記負荷駆動素子を制御する回路を、前記駆動制御回路または前記診断用駆動制御回路に切替る信号切替回路と、
電流検出抵抗と、
切替え可能なゲインを備えた増幅回路、を備えて、
前記駆動制御回路が前記負荷駆動素子を非導通状態に制御している期間中、前記駆動素子を制御する回路が前記信号切替回路により前記診断用駆動制御回路に切替わり、かつ、
前記増幅回路のゲインを切替え、
前記診断用駆動制御回路は、
前記負荷に流れる電流が前記負荷の駆動電流量以下かつ所望の電流量になるように前記負荷駆動素子を制御し、
前記駆動電流量以下かつ所望の電流量を前記増幅回路によって増幅させて前記診断回路に注入し、
前記診断回路に故障が発生しているか否かを判定する、
ことを特徴とする負荷駆動回路。 - 請求項2に記載された負荷駆動回路において、
前記負荷の異常を診断する必要がある状態のとき、前記診断回路は前記負荷の状態を診断し、前記負荷に異常の発生を検出した場合には負荷駆動回路は所定の動作に移行し、
前記負荷の異常を診断する必要がない状態のとき、前記診断回路は前記擬似異常信号生成回路が出力する前記擬似異常信号を注入され、前記診断回路に故障が発生しているか否かを判定され、
前記擬似異常信号の注入により、前記診断回路が前記負荷の異常を検出した場合には前記診断回路は正常と判定し、前記診断回路が前記負荷の異常を検出しなかった場合には前記診断回路に故障が発生していると判定し、
負荷駆動回路は所定の動作に移行する、
ことを特徴とする負荷駆動回路。 - 請求項1に記載された負荷駆動回路において、
前記負荷駆動回路の用途は、
前記負荷駆動素子をスイッチングし、入力された電圧を昇圧または降圧して所定の電圧を出力するスイッチングレギュレータでも良い、
ことを特徴とする負荷駆動回路。 - 請求項3に記載された負荷駆動回路において、
前記診断回路に故障が発生していることの判定は、
前記負荷の異常を診断する必要のない状態のとき、
前記診断回路へ連続した所定回数の前記擬似異常信号を注入し、
前記診断回路が前記連続した所定回数の故障を検出した場合に前記診断回路は正常と判定し、
前記診断回路が前記連続した所定回数の故障を検出できなかった場合に前記診断回路に故障が発生していると判定しても良い、
ことを特徴とする負荷駆動回路。 - 請求項6に記載された負荷駆動回路において、
前記擬似異常信号を連続する一つ以上の周期で前記診断回路に注入し、
前記診断回路が前記連続する一つ以上の周期で注入した前記擬似異常信号を検出した場合に前記診断回路は正常と判定する、
ことを特徴とする負荷駆動回路。 - 請求項7に記載された負荷駆動回路において、
前記負荷に異常が発生した際に生じる物理量が所定のしきい値を逸脱した場合に、前記負荷に異常が発生と判定する前記診断回路に、
前記しきい値を逸脱していない前記擬似異常信号と、
前記しきい値を逸脱している前記擬似異常信号の、
少なくとも2種類の前記擬似異常信号を注入することで、
前記所定のしきい値が所定の範囲から逸脱しているか否かを判定する、
ことを特徴とする負荷駆動回路。 - 請求項8に記載された負荷駆動回路において、
前記負荷の異常を診断する前記診断回路は、
バッテリショートを診断する回路、
グランドショートを診断する回路、
過電流を診断する回路、
および負荷オープンを診断する回路、のうち、
少なくとも一つを有する、
ことを特徴とする負荷駆動回路。 - 請求項9に記載された負荷駆動回路において、
負荷駆動回路の構成は、
ローサイドドライバ構成、
ハイサイドドライバ構成、
プッシュプル構成、
ハーフブリッジ構成、
およびフルブリッジ構成、のうち、
いずれか一つの構成を有する、
ことを特徴とする負荷駆動回路。 - 請求項10に記載された負荷駆動回路において、
前記負荷駆動素子、
前記駆動制御回路、
前記診断用駆動制御回路、
前記切替え手段、
前記検出手段、
前記ゲイン変更手段、
前記増幅回路、
前記診断回路、
前記負荷に異常が発生した際に生じる物理量と、前記負荷に異常発生と判定するためのしきい値とを比較する比較回路、
および前記擬似異常信号生成回路、のうち、
少なくとも一部を半導体集積回路に内蔵した、
ことを特徴とする負荷駆動回路。 - 請求項11に記載された負荷駆動回路において、
前記負荷駆動素子は、
FET、
バイポーラトランジスタ、
IGBT、のいずれか、または組み合わせで構成されても良い、
ことを特徴とする負荷駆動回路。 - 請求項12に記載された負荷駆動回路において、
前記負荷に流れる負荷電流を検出する前記検出手段は、
抵抗、
センスMOS、のいずれか、または組み合わせでも良い、
ことを特徴とする負荷駆動回路。
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