WO2015083674A1 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置 Download PDF

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Publication number
WO2015083674A1
WO2015083674A1 PCT/JP2014/081791 JP2014081791W WO2015083674A1 WO 2015083674 A1 WO2015083674 A1 WO 2015083674A1 JP 2014081791 W JP2014081791 W JP 2014081791W WO 2015083674 A1 WO2015083674 A1 WO 2015083674A1
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Prior art keywords
signal
unit
ramp
imaging
photoelectric conversion
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Ceased
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PCT/JP2014/081791
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English (en)
French (fr)
Japanese (ja)
Inventor
寛信 村田
史郎 綱井
栗山　孝司
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Nikon Corp
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Nikon Corp
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Priority to EP14868028.3A priority Critical patent/EP3079356A4/en
Priority to CN201910767768.4A priority patent/CN110365921B/zh
Priority to CN201480073715.8A priority patent/CN106416229B/zh
Publication of WO2015083674A1 publication Critical patent/WO2015083674A1/ja
Anticipated expiration legal-status Critical
Priority to US15/261,049 priority patent/US10205901B2/en
Priority to US16/185,638 priority patent/US10798325B2/en
Priority to US17/010,099 priority patent/US20200404200A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals

Definitions

  • the present invention relates to an imaging element and an imaging apparatus.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 2006-303752
  • a plurality of signal lines that respectively read signals received by the plurality of light receiving units arranged in the first direction among the plurality of light receiving units, and one of the plurality of signal lines
  • an imaging device including a control unit that reads a signal with a time difference between a signal line and another signal line.
  • the first imaging area and the second imaging area are provided, the first pixel signal generated according to the light incident on the first imaging area, and the second imaging area.
  • An imaging unit that outputs a second pixel signal generated according to light, a first lamp generation unit that generates a first ramp signal, a second lamp generation unit that generates a second ramp signal, and a first pixel
  • An image sensor comprising: a second signal conversion unit that converts the second pixel signal into a second digital image signal.
  • an imaging apparatus including the imaging device of the first or second aspect is provided.
  • FIG. 3 is a diagram illustrating a configuration example of an imaging region 131 and an AD conversion unit 180.
  • FIG. 12 is a timing chart showing an operation example of a first imaging area 131-1 and a second imaging area 131-2. It is a figure which shows the example of the several imaging area. It is a figure which shows the other example of the several imaging area. It is a figure which shows the other example of the several imaging area.
  • 3 is a diagram illustrating a configuration example of an imaging unit 120 and a plurality of AD conversion units 180.
  • FIG. 6 is a timing chart illustrating an operation example of four AD conversion units 180 provided in the same column.
  • FIG. 10 is a timing chart showing details of operations of the first AD converter 180-1 and the second AD converter 180-2 in the operation example shown in FIG. 11 is a timing chart showing another example of the operation of four AD conversion units 180 provided in the same column.
  • 11 is a timing chart showing details of operations of the first AD converter 180-1 and the third AD converter 180-3 in the operation example shown in FIG. It is a figure which shows the image of the read timing difference in rolling reading.
  • 3 is a diagram illustrating a configuration example of a plurality of lamp generation units 182.
  • FIG. FIG. 11 is a diagram illustrating another configuration example of a plurality of lamp generation units 182. It is sectional drawing of the image pick-up element 100 which concerns on this embodiment. It is a block diagram which shows the structural example of the imaging device 500 which concerns on an Example.
  • FIG. 1 is a diagram illustrating an example of a configuration of an image sensor 100 according to an embodiment of the present invention.
  • the image sensor 100 is a camera that captures a still image or a moving image, for example.
  • the imaging element 100 of this example includes an imaging unit 120, a plurality of AD conversion units 180, and a plurality of lamp generation units 182.
  • the imaging unit 120 has a plurality of imaging areas 131. Each imaging region 131 accumulates charges according to incident light. Each imaging region 131 has one or more photoelectric conversion units that convert incident light into electric charges and store them. The photoelectric conversion unit is an example of a light receiving unit.
  • the image sensor 100 generates a pixel signal corresponding to incident light by reading out the amount of charge accumulated in each imaging region 131.
  • FIG. 1 shows a first imaging region 131-1 for generating a first pixel signal and a second imaging region 131-2 for generating a second pixel signal.
  • the first imaging region 131-1 has one or more first photoelectric conversion units
  • the second imaging region 131-2 has one or more second photoelectric conversion units.
  • the imaging unit 120 may include a plurality of photoelectric conversion units arranged in a matrix, and each imaging region 131 may include one column of photoelectric conversion units.
  • the imaging region 131 may include photoelectric conversion units arranged discretely.
  • the imaging region 131 may be a block having a predetermined length (the number of photoelectric conversion units) in the row direction and the column direction.
  • the plurality of photoelectric conversion units arranged in the first direction for example, a plurality of photoelectric conversion units included in a predetermined row or column
  • some of the photoelectric conversion units are included in the first imaging region 131-1.
  • the other part of the photoelectric conversion unit may be included in the second imaging region 131-2.
  • a signal line for reading a signal corresponding to the received light is connected to each photoelectric conversion unit.
  • the AD converter 180 is provided corresponding to each imaging region 131.
  • the first AD converter 180-1 and the second AD converter 180-2 corresponding to the first imaging region 131-1 and the second imaging region 131-2 are shown.
  • Each AD conversion unit 180 is an example of a signal conversion unit that converts an analog pixel signal corresponding to a charge accumulation amount in a corresponding imaging region 131 into a digital image signal.
  • the first AD converter 180-1 converts the first pixel signal into a first digital image signal
  • the second AD converter 180-2 converts the second pixel signal into a second digital image signal.
  • the AD conversion unit 180 may sequentially read the charge amounts generated by the plurality of photoelectric conversion units and convert them into digital image signals.
  • the AD conversion unit 180 functions as a signal conversion unit that converts a signal read from the photoelectric conversion unit into a digital signal for each of a plurality of signal lines connected to the plurality of photoelectric conversion units.
  • FIG. 1 shows a first ramp generation unit 182-1 and a second ramp generation unit 182-2 provided corresponding to the first AD conversion unit 180-1 and the second AD conversion unit 180-2.
  • Each ramp generation unit 182 generates a ramp signal. Characteristics such as the slope of the ramp signal generated by each ramp generator 182 can be controlled independently for each ramp generator 182.
  • the ramp generation units 182 may be provided in one-to-one correspondence with the plurality of AD conversion units 180, and at least some of the ramp generation units 182 may be shared by two or more AD conversion units 180.
  • the lamp generation unit 182 functions as a control unit that controls the timing of reading a signal from the signal line connected to the photoelectric conversion unit.
  • the ramp generation unit 182 of this example controls the signal conversion timing in the corresponding AD conversion unit 180.
  • the control unit can read a signal with a time difference between one signal line of the plurality of signal lines and another signal line. In one example, the control unit can read signals with a time difference for each of a plurality of signal lines. In this case, the ramp generation unit 182 may be provided for each of a plurality of signal lines.
  • Each AD converter 180 converts the pixel signal into a digital signal based on the comparison result between the ramp signal generated by the corresponding ramp generator 182 and the corresponding pixel signal. For example, the AD conversion unit 180 outputs the digital value corresponding to the time from the timing at which the ramp signal is received to the timing at which the level of the ramp signal and the level of the pixel signal intersect, thereby changing the level of the pixel signal to the digital value. Convert to
  • the imaging device 100 of this example includes the plurality of lamp generation units 182, it is possible to use ramp signals having different characteristics for each imaging region 131. For example, by using ramp signals having different inclinations for the first imaging region 131-1 and the second imaging region 131-2, the digital value of the digital image signal with respect to the analog level of the pixel signal output from the imaging region 131 is changed. Gain can be varied. In addition, by using ramp signals generated at different timings for the first imaging region 131-1 and the second imaging region 131-2, the readout timing of the pixel signals output from the imaging region 131 can be varied. it can. That is, a pixel signal can be read with a time difference between one signal line of the plurality of signal lines and another signal line.
  • the control unit including the ramp generation unit 182 reads the pixel signal with a time difference between the signal lines, so that the first photoelectric conversion unit among the plurality of photoelectric conversion units receives a plurality of photoelectric conversions while receiving light.
  • the pixel signal received by the second photoelectric conversion unit may be read out.
  • FIG. 2 is a diagram illustrating a configuration example of the imaging region 131 and the AD conversion unit 180.
  • the imaging unit 120 including a plurality of imaging regions 131 is provided on the imaging chip 113.
  • the plurality of AD conversion units 180 and the plurality of ramp generation units 182 are provided in the signal processing chip 111.
  • FIG. 2 a set of imaging region 131, AD conversion unit 180, and a plurality of lamp generation units 182 are shown.
  • the imaging chip 113 and the signal processing chip 111 are, for example, semiconductor chips.
  • the signal processing chip 111 is stacked with the imaging chip 113.
  • the signal processing chip 111 is disposed so as to overlap with the imaging chip 113 and is electrically connected to the imaging chip 113 via the bumps 109 and the like.
  • an increase in the area of the imaging unit 120 is suppressed, and a plurality of AD conversion units 180 and a plurality of lamps are provided.
  • the generation unit 182 can be easily provided.
  • the wiring length between each photoelectric conversion unit 104 and AD conversion unit 180 can be shortened, and the pixel signal can be read with high accuracy.
  • the imaging region 131 includes one photoelectric conversion unit 104, a transfer transistor 152, a reset transistor 154, an amplification transistor 156, and a selection transistor 158.
  • the source and drain of the transfer transistor 152 are connected to the output terminal of the photoelectric conversion unit 104 and the gate of the amplification transistor 156, respectively.
  • the parasitic capacitance in the wiring between the output terminal of the photoelectric conversion unit 104 and the source of the transfer transistor 152 functions as a charge accumulation unit that accumulates charges generated by the photoelectric conversion unit 104.
  • the charge storage unit is a part of the photoelectric conversion unit 104.
  • a transfer signal Tx for controlling whether or not to transfer the amount of charge stored in the charge storage unit is input to the gate of the transfer transistor 152.
  • the reference voltage VDD is input to the drain of the reset transistor 154, and the source is connected to the gate of the amplification transistor 156.
  • a reset signal Reset for controlling whether or not to reset the amount of charge accumulated in the charge accumulation unit is input to the gate of the reset transistor 154.
  • the reference voltage VDD is input to the drain of the amplification transistor 156, and the source is connected to the drain of the selection transistor 158.
  • the amplification transistor 156 outputs an analog pixel signal corresponding to the amount of charge transferred from the transfer transistor 152.
  • the selection signal Select is input to the gate of the selection transistor 158, and the source is connected to the AD conversion unit 180.
  • the selection transistor 158 inputs the pixel signal from the transfer transistor 152 to the AD conversion unit 180 in response to the selection signal Select.
  • the imaging region 131 having one photoelectric conversion unit 104 is shown, but a plurality of photoelectric conversion units 104 may be provided in the imaging region 131.
  • the corresponding AD conversion units 180 sequentially read out analog signals corresponding to the charges accumulated in the respective photoelectric conversion units 104.
  • the AD conversion unit 180 includes a level comparator 184 and a period measurement unit 186.
  • the level comparator 184 compares the level of the ramp signal input from the corresponding ramp generation unit 182 with the level of the pixel signal from the corresponding imaging area 131. For example, the level comparator 184 outputs a logical value 0 when the level of the pixel signal is smaller than the level of the ramp signal, and outputs a logical value 1 when the level of the pixel signal is equal to or higher than the level of the ramp signal.
  • the period measurement unit 186 measures a period from the timing when the ramp generation unit 182 starts to input the ramp signal to the level comparator 184 until the level comparator 184 outputs the logical value 1.
  • the period measuring unit 186 may be a counter that receives a clock signal having a predetermined frequency and counts the number of pulses of the clock signal in the period.
  • the period measuring unit 186 outputs a digital value corresponding to the measured length of the period.
  • the period measuring unit 186 outputs the number of pulses of the clock signal counted within the period as a digital value.
  • the level comparator 184 outputs a logical value 1 from the timing when the ramp generation unit 182 starts to input the ramp signal to the level comparator 184 according to the slope of the ramp signal. The period until it changes. For this reason, the gain in the AD converter 180 can be controlled by the slope of the ramp signal.
  • FIG. 3 is a timing chart showing an operation example of the first imaging region 131-1 and the second imaging region 131-2.
  • ramp signals having different inclinations are used for the first imaging region 131-1 and the second imaging region 131-2.
  • ADC1 input indicates the waveform of the first pixel signal input to the first AD converter 180-1
  • Ramp1 indicates the waveform of the first ramp signal generated by the first ramp generator 182-1
  • ADC1 out indicates the magnitude of the digital value output from the first AD converter 180-1 in terms of the length on the time axis
  • ADC2 input indicates the waveform of the second pixel signal input to the second AD converter 180-2
  • Ramp2 indicates the waveform of the second ramp signal generated by the second ramp generator 182-2
  • ADC2 out indicates the magnitude of the digital value output by the second AD converter 180-2 in terms of the length on the time axis.
  • the waveforms of the first pixel signal and the second pixel signal are the same for comparison. Further, the image sensor 100 of this example performs so-called correlated double sampling CDS.
  • an H level reset signal is input to the reset transistor 154, the charge accumulated in each photoelectric conversion unit 104 is reset, and the level of the pixel signal input to each AD conversion unit 180 becomes a predetermined reference level. .
  • each ramp generation unit 182 In the state where the level of the pixel signal is stable, each ramp generation unit 182 generates a ramp signal.
  • the initial level of the ramp signal is larger than the reference level of the pixel signal, and the level decreases at a constant rate with time.
  • the AD conversion unit 180 measures the period from the start timing of the ramp signal level decrease to the timing at which the ramp signal level becomes lower than the pixel signal level. As a result, the AD conversion unit 180 outputs a digital value indicating the reference level of the pixel signal.
  • the transfer signal Tx is input to the transfer transistor 152
  • a pixel signal corresponding to the amount of charge accumulated in the photoelectric conversion unit 104 is input to the AD conversion unit 180.
  • the ramp generation unit 182 In a state where the level of the pixel signal is stable, the ramp generation unit 182 generates a ramp signal.
  • the AD conversion unit 180 measures the period from the start timing of the ramp signal level decrease to the timing at which the ramp signal level becomes lower than the pixel signal level. Thereby, the AD converter 180 outputs a digital value indicating the level of the pixel signal.
  • the luminance value of the pixel of the photoelectric conversion unit 104 is calculated based on the difference between the level and the reference level.
  • ramp signals having different inclinations are used for the first imaging region 131-1 and the second imaging region 131-2. Therefore, as shown in FIG. 3, even if the waveform of the pixel signal is the same, the value of the output digital image signal is different. For example, the value of the digital image signal decreases as the slope of the ramp signal waveform increases. Thus, by independently controlling the slope of each ramp signal, the gain between input and output in each AD converter 180 can be controlled.
  • Each ramp generation unit 182 may generate ramp signals having different slopes in accordance with the difference in sensitivity in the corresponding photoelectric conversion unit 104.
  • sensitivity refers to the gain of the level of the pixel signal with respect to the intensity of incident light.
  • Sensitivity may refer to the gain of the level of the pixel signal with respect to the intensity of a specific wavelength component of incident light.
  • FIG. 4 is a diagram illustrating an example of a plurality of imaging regions 131.
  • the first imaging region 131-1 has a plurality of first photoelectric conversion units 104-1 and the second imaging region 131-2 has a plurality of second photoelectric conversion units 104-2.
  • FIG. 4 only two imaging regions 131 are illustrated, but the imaging unit 120 includes more imaging regions 131.
  • Each photoelectric conversion unit 104 is included in one of the imaging regions 131. Note that each of the photoelectric conversion units 104 is provided with each transistor illustrated in FIG.
  • the first photoelectric conversion unit 104-1 is a focus detection photoelectric conversion unit that detects the focal position of the optical system through which incident light has passed. However, the signal output from the first photoelectric conversion unit 104-1 is used not only for focus detection but also as a pixel signal constituting an image.
  • the second photoelectric conversion unit 104-2 is a photoelectric conversion unit not for focus detection.
  • the sensitivity of the first photoelectric conversion unit 104-1 for focus detection is different from the sensitivity of the other second photoelectric conversion unit 104-2.
  • the first photoelectric conversion unit 104-1 includes a light shielding unit 122 that shields half of the light receiving surface. That is, the sensitivity of the first photoelectric conversion unit 104-1 may be about half that of the other second photoelectric conversion unit 104-2.
  • the first ramp generator 182-1 generates a ramp signal that compensates for the decrease in sensitivity.
  • the first ramp generation unit 182-1 generates a ramp signal whose slope is half that of the second ramp signal.
  • the gain in the first AD converter 180-1 is twice the gain in the second AD converter 180-2, and the difference in sensitivity between the first photoelectric converter 104-1 and the second photoelectric converter 104-2 is reduced. Can be compensated.
  • FIG. 5 is a diagram illustrating another example of the plurality of imaging regions 131.
  • the imaging unit 120 of this example has three imaging areas 131.
  • one or two photoelectric conversion units 104 included in each imaging region 131 are illustrated, and the entire configuration of the imaging region 131 is omitted.
  • the first photoelectric conversion unit 104-1 included in the first imaging region 131-1 converts the first wavelength component of the incident light into the first pixel signal.
  • the second photoelectric conversion unit 104-2 included in the second imaging region 131-2 converts a second wavelength component different from the first wavelength component in the incident light into a second pixel signal.
  • the third photoelectric conversion unit 104-3 included in the third imaging region 131-3 converts a third wavelength component different from the first wavelength component and the second wavelength component in the incident light into a third pixel signal.
  • the first wavelength component is a component corresponding to green
  • the second wavelength component is a component corresponding to blue
  • the third wavelength component is a component corresponding to red.
  • Each photoelectric conversion unit 104 may include a color filter that allows a predetermined wavelength component to pass therethrough.
  • each photoelectric conversion unit 104 converts incident light that has passed through a color filter or the like having different characteristics into a pixel signal, the sensitivity of the pixel signal with respect to incident light before passing through the color filter or the like does not necessarily match.
  • Each ramp generation unit 182 generates a ramp signal having a slope corresponding to the sensitivity of the corresponding photoelectric conversion unit 104. Thereby, the difference in sensitivity of each photoelectric conversion unit 104 can be compensated.
  • the lamp generation unit 182 may be provided in common for a plurality of imaging regions 131 having the same sensitivity.
  • the imaging device 100 includes three lamp generation units 182 corresponding to green, blue, and red colors, and each of the lamp generation units 182 includes one or more AD corresponding to one or more imaging regions 131 corresponding to each color.
  • a ramp signal may be supplied to the conversion unit 180.
  • the image sensor 100 may further include a ramp generation unit 182 corresponding to the focus detection imaging region 131 illustrated in FIG. 4.
  • FIG. 6 is a diagram illustrating another example of the plurality of imaging regions 131.
  • the ramp generation unit 182 in this example controls the slope of the ramp signal according to the position of the corresponding imaging region 131.
  • the ramp generation unit 182 may control the slope of the ramp signal according to the distance from the center of the entire imaging region. By such control, even if the incident light quantity varies depending on the position of the imaging region 131 due to the characteristics of the optical system, the level difference of the pixel signal due to the variation can be compensated.
  • the slope of the ramp signal to be adopted for each imaging region 131 may be determined based on the level of the pixel signal output from each imaging region 131 when known reference light is incident. .
  • FIG. 7 is a diagram illustrating a configuration example of the imaging unit 120 and the plurality of AD conversion units 180.
  • the ramp generation unit 182 is omitted, but the AD conversion unit 180 and the ramp generation unit 182 are provided on a one-to-one basis.
  • the imaging unit 120 includes a plurality of photoelectric conversion units 104 arranged in a matrix.
  • the imaging unit 120 of this example includes N photoelectric conversion units 104 in the column direction and M photoelectric conversion units 104 in the row direction.
  • each imaging region 131 includes N / P photoelectric conversion units 104.
  • the AD conversion unit 180 and the imaging region 131 correspond one to one. That is, each AD conversion unit 180 is provided corresponding to the N / P photoelectric conversion units 104, and sequentially reads the pixel signals of the corresponding photoelectric conversion units 104.
  • four AD converters 180 are provided in each column. Each AD conversion unit 180 is connected to the photoelectric conversion units 104 arranged every four in the column.
  • the first AD converter 180-1 is connected to the first, fifth, ninth,..., N, n + 4,.
  • the second AD converter 180-2 is connected to the 2, 6, 10,..., N + 1, n + 5,.
  • the third AD converter 180-3 is connected to the 3, 9, 11,..., N + 2, n + 7,..., N ⁇ 1th photoelectric converter 104 in the column, and the fourth AD converter 180-4.
  • the plurality of AD conversion units 180 and the plurality of lamp generation units 182 are provided on the same plane as the plurality of photoelectric conversion units 104 in the imaging unit 120.
  • the P AD conversion units 180 provided in the same column may read pixel signals at the same timing, and can read pixel signals at different timings.
  • FIG. 8 is a timing chart showing an operation example of the four AD conversion units 180 provided in the same column.
  • four pixel signals of the photoelectric conversion unit 104 in the same column are simultaneously read out.
  • “Selectx” indicates the number of the photoelectric conversion unit 104 that inputs a pixel signal to the xth AD conversion unit 180.
  • the same reset signal Reset is input to each photoelectric conversion unit 104.
  • the period of the reset signal Reset is 2 to 20 ⁇ s as an example.
  • the transfer signal Tx having the same timing is input to the n, n + 1, n + 2, and n + 3th photoelectric conversion units 104.
  • the n, n + 1, n + 2, and n + 3th photoelectric conversion units 104 are simultaneously selected by the selection signal Select as the photoelectric conversion units 104 from which pixel signals are to be read.
  • Each AD conversion unit 180 simultaneously reads out the pixel signals of the selected photoelectric conversion unit 104.
  • the pixel signals of the n + 4, n + 5, n + 6, and n + 7th photoelectric conversion units 104 are simultaneously read out in the same procedure.
  • P four in the example of FIG. 8
  • pixel signals of the photoelectric conversion unit 104 are simultaneously read out at predetermined intervals (for example, 2 to 20 ⁇ s). For this reason, when the pixel signal of the photoelectric conversion unit 104 in each column is read by the rolling method, the difference in read timing becomes the cycle of the reset signal Reset.
  • FIG. 9 is a timing chart showing details of operations of the first AD converter 180-1 and the second AD converter 180-2 in the operation example shown in FIG.
  • the slopes of the first ramp signal Ramp1 and the second ramp signal Ramp2 are different.
  • the first AD converter 180-1 and the second AD converter 180-2 have different gains according to the slope of the ramp signal. Note that, as described in FIG. 8, the operation timings of the first AD converter 180-1 and the second AD converter 180-2 are the same.
  • FIG. 10 is a timing chart showing another operation example of the four AD conversion units 180 provided in the same column.
  • the read timings of the four AD converters 180 are shifted by ⁇ T.
  • the read timing of each AD converter 180 is shifted by a value obtained by dividing the period of the reset signal (for example, 2 to 20 ⁇ s) by P.
  • phase of the reset signal input to each photoelectric conversion unit 104 is shifted by ⁇ T. Further, the phases of the transfer signal Tx and the selection signal Select input to each photoelectric conversion unit 104 are also shifted by ⁇ T. Further, the reading timing of the AD conversion unit 180 is also shifted by ⁇ T.
  • FIG. 11 is a timing chart showing details of the operations of the first AD converter 180-1 and the third AD converter 180-3 in the operation example shown in FIG. In this example, as in the example shown in FIG. 3, the slopes of the first ramp signal Ramp1 and the third ramp signal Ramp3 are different.
  • the timing at which each ramp generation unit 182 generates the ramp signal is also shifted by ⁇ T. That is, the first ramp signal Ramp1 and the third ramp signal Ramp3 are out of timing by 2 ⁇ ⁇ T.
  • the timing at which each ramp generation unit 182 generates the ramp signal is, for example, the timing at which the corresponding reset signal Reset is delayed by a predetermined delay amount.
  • FIG. 12 is a diagram showing an image of a read timing difference in rolling read.
  • the upper side of FIG. 12 shows the read timing difference in the example shown in FIGS. 8 and 9, and the lower side shows the read timing difference in the example shown in FIGS. 10 and 11.
  • the left end in the row direction indicates the readout timing of the photoelectric conversion unit 104 in each row. That is, the step in the row direction indicates the timing difference. As described above, the read timing difference can be increased by 1 / P times by shifting the timing of the ramp signal in the ramp generation unit 182.
  • FIG. 13A is a diagram illustrating a configuration example of a plurality of lamp generation units 182.
  • the image sensor 100 includes a seed lamp generation unit 190 and a plurality of lamp generation units 182a.
  • the seed ramp generator 190 generates a seed ramp signal having a predetermined slope.
  • each ramp generator 182a has an amplifier that branches and receives the seed ramp signal, amplifies the seed ramp signal, and outputs the amplified signal.
  • the amplification factor in each ramp generator 182a can be controlled independently. Accordingly, each ramp generation unit 182a can generate a ramp signal having a slope corresponding to the amplification factor.
  • each ramp generator 182a may further include a variable delay element that delays the seed ramp signal. Thereby, each ramp generation unit 182a can independently control the timing of the ramp signal.
  • FIG. 13B is a diagram illustrating another configuration example of the plurality of lamp generation units 182.
  • the imaging device 100 includes a clock generation unit 192, a plurality of lamp generation units 182b, and a lamp control unit 188.
  • the clock generation unit 192 generates a clock signal having a predetermined frequency.
  • each ramp generation unit 182b includes a DA converter that outputs a digital signal supplied from the ramp control unit 188 at the frequency of the clock signal.
  • the ramp control unit 188 sequentially inputs digital values whose values change with a predetermined inclination to the ramp generation unit 182b and outputs a ramp signal.
  • the ramp controller 188 can output ramp signals having different slopes by independently controlling the slope of the digital value for each ramp generator 182b.
  • the ramp control unit 188 can output ramp signals with different start timings by independently controlling the timing of inputting the digital value for each ramp generation unit 182b.
  • FIG. 14 is a cross-sectional view of the image sensor 100 according to the present embodiment.
  • a so-called back-illuminated image sensor 100 is shown, but the image sensor 100 is not limited to the back-illuminated type and may be a front-illuminated type.
  • the image sensor 100 may have a structure including a laminated chip laminated on the imaging chip 113.
  • the imaging device 100 of this example includes an imaging chip 113 that outputs a pixel signal corresponding to incident light, a signal processing chip 111 that processes the pixel signal, and a memory chip 112 that stores a digital image signal.
  • the imaging chip 113, the signal processing chip 111, and the memory chip 112 are stacked, and are electrically connected to each other by a plurality of conductive bumps 109 such as Cu.
  • the signal processing chip 111 and the memory chip 112 correspond to the above-described laminated chip.
  • incident light is incident mainly in the positive direction of the Z axis indicated by the white arrow.
  • the surface on the side where incident light is incident is referred to as a back surface.
  • the right direction on the paper orthogonal to the Z axis is the X axis plus direction
  • the front side of the paper orthogonal to the Z axis and the X axis is the Y axis plus direction.
  • An example of the imaging chip 113 is a back-illuminated MOS image sensor.
  • the imaging chip 113 corresponds to the imaging unit 120 illustrated in FIGS. 1 to 13B.
  • the PD layer 106 is disposed on the back side of the wiring layer 108.
  • the PD layer 106 includes a plurality of photoelectric conversion units 104 that generate charges corresponding to light.
  • the imaging chip 113 outputs a pixel signal corresponding to the charge.
  • the PD layer 106 in this example includes a plurality of photoelectric conversion units 104 arranged two-dimensionally, and a transistor 105 provided corresponding to the photoelectric conversion unit 104.
  • the transistor 105 corresponds to each transistor in FIG.
  • a color filter 102 is provided on the incident light incident side of the PD layer 106 via a passivation film 103.
  • the color filter 102 has a plurality of types that transmit different wavelength regions, and has a specific arrangement corresponding to each of the photoelectric conversion units 104.
  • a set of the color filter 102, the photoelectric conversion unit 104, and the transistor 105 forms one pixel.
  • a microlens 101 is provided on the incident light incident side of the color filter 102 corresponding to each pixel.
  • the microlens 101 condenses incident light toward the corresponding photoelectric conversion unit 104.
  • the wiring layer 108 includes a wiring 107 that transmits a pixel signal from the PD layer 106 to the signal processing chip 111.
  • the wiring 107 may be multilayer, and a passive element and an active element may be provided.
  • a plurality of bumps 109 are arranged on the surface of the wiring layer 108.
  • the plurality of bumps 109 are aligned with the plurality of bumps 109 provided on the opposing surfaces of the signal processing chip 111, and the imaging chip 113 and the signal processing chip 111 are pressed and aligned.
  • the bumps 109 are joined and electrically connected.
  • a plurality of bumps 109 are arranged on the mutually facing surfaces of the signal processing chip 111 and the memory chip 112.
  • the bumps 109 are aligned with each other, and the signal processing chip 111 and the memory chip 112 are pressurized, so that the aligned bumps 109 are joined and electrically connected.
  • the bonding between the bumps 109 is not limited to Cu bump bonding by solid phase diffusion, and micro bump bonding by solder melting may be employed. Further, for example, one bump 109 may be provided for one output wiring described later, or a plurality of bumps 109 may be provided. The size of the bump 109 may be larger than the pitch of the photoelectric conversion unit 104. Further, a bump larger than the bump 109 corresponding to the pixel region may be provided in a peripheral region other than the pixel region where the pixels are arranged.
  • the signal processing chip 111 receives an analog pixel signal output from the imaging chip 113.
  • the signal processing chip 111 performs predetermined signal processing on the received pixel signal and outputs it to the memory chip 112.
  • the memory chip 112 stores a signal received from the signal processing chip 111.
  • the signal processing chip 111 of this example a plurality of AD conversion units 180 and a plurality of ramp generation units 182 are provided.
  • the signal processing chip 111 may perform a predetermined calculation such as correction on the digital image signal.
  • At least a part of the plurality of AD conversion units 180 is two-dimensionally arranged on the ADC arrangement surface parallel to the surface on which the plurality of pixels are provided.
  • a plurality of pixels are arranged two-dimensionally along the row direction and the column direction in the imaging chip 113, and a plurality of AD conversion units 180 are arranged two-dimensionally along the row direction and the column direction in the signal processing chip 111. Is done.
  • the plurality of AD converters 180 are preferably arranged at equal intervals in the signal processing chip 111.
  • the plurality of AD conversion units 180 may be non-uniformly arranged on the ADC arrangement surface of the signal processing chip 111.
  • the plurality of AD conversion units 180 may be arranged so that the density at the end is higher than the center of the ADC arrangement surface of the signal processing chip 111.
  • the plurality of AD conversion units 180 may be arranged on a plurality of ADC arrangement surfaces having different positions in the Z-axis direction in the signal processing chip 111. That is, the signal processing chip 111 is a multilayer chip, and the plurality of AD conversion units 180 may be provided in different layers. Even in this case, when the positions where the plurality of AD conversion units 180 are arranged are projected onto a single ADC arrangement plane, the AD conversion units 180 are preferably arranged at equal intervals.
  • the signal processing chip 111 has a TSV (through silicon via) 110 that connects circuits provided on the front and back surfaces to each other.
  • the TSV 110 is preferably provided in the peripheral area.
  • the TSV 110 may also be provided in the peripheral area of the imaging chip 113 and the memory chip 112.
  • FIG. 15 is a block diagram illustrating a configuration example of the imaging apparatus 500 according to the embodiment.
  • the imaging apparatus 500 includes a photographic lens 520 as a photographic optical system, and the photographic lens 520 guides a subject luminous flux incident along the optical axis OA to the imaging element 100.
  • the photographing lens 520 may be an interchangeable lens that can be attached to and detached from the imaging apparatus 500.
  • the imaging apparatus 500 mainly includes an imaging device 100, a system control unit 501, a drive unit 502, a photometry unit 503, a work memory 504, a recording unit 505, and a display unit 506.
  • the photographing lens 520 is composed of a plurality of optical lens groups, and forms an image of a subject light flux from the scene in the vicinity of its focal plane. In FIG. 15, a single virtual lens arranged in the vicinity of the pupil is shown as a representative.
  • the driving unit 502 is a control circuit that executes charge accumulation control such as timing control and area control of the imaging unit 120 in accordance with an instruction from the system control unit 501.
  • the drive unit 502 and the system control unit 501 may have the function of the AD conversion unit 180 described with reference to FIGS. 1 to 13B.
  • a part of the control circuit forming the drive unit 502 and the system control unit 501 may be formed into a chip and stacked on the imaging chip 113.
  • the image sensor 100 delivers the pixel signal to the image processing unit 511 of the system control unit 501.
  • the image sensor 100 is the same as the image sensor 100 described with reference to FIGS. 1 to 13B.
  • the image processing unit 511 performs various image processing using the work memory 504 as a work space, and generates image data. For example, when generating image data in JPEG file format, compression processing is executed after white balance processing, gamma processing, and the like are performed.
  • the generated image data is recorded in the recording unit 505, converted into a display signal, and displayed on the display unit 506 for a preset time.
  • the photometric unit 503 detects the luminance distribution of the scene prior to a series of shooting sequences for generating image data.
  • the photometry unit 503 includes, for example, an AE sensor having about 1 million pixels.
  • the calculation unit 512 of the system control unit 501 receives the output of the photometry unit 503 and calculates the luminance for each area of the scene.
  • the calculation unit 512 determines the shutter speed, aperture value, and ISO sensitivity according to the calculated luminance distribution.
  • the pixels used for the AE sensor may be provided in the imaging unit 120. In this case, the photometric unit 503 separate from the imaging unit 120 may not be provided.

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  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
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EP14868028.3A EP3079356A4 (en) 2013-12-06 2014-12-01 Imaging element and imaging device
CN201910767768.4A CN110365921B (zh) 2013-12-06 2014-12-01 电子设备
CN201480073715.8A CN106416229B (zh) 2013-12-06 2014-12-01 拍摄元件以及拍摄装置
US15/261,049 US10205901B2 (en) 2013-12-06 2016-09-09 Electronic device with image sensor and control unit
US16/185,638 US10798325B2 (en) 2013-12-06 2018-11-09 Electronic device with image sensor that includes photoelectric converting sections that start to store eletrical charge at different timings
US17/010,099 US20200404200A1 (en) 2013-12-06 2020-09-02 Image sensor and imaging apparatus

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US10205901B2 (en) 2019-02-12
US20200404200A1 (en) 2020-12-24

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