JP6413235B2 - 撮像素子および撮像装置 - Google Patents

撮像素子および撮像装置 Download PDF

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Publication number
JP6413235B2
JP6413235B2 JP2013252940A JP2013252940A JP6413235B2 JP 6413235 B2 JP6413235 B2 JP 6413235B2 JP 2013252940 A JP2013252940 A JP 2013252940A JP 2013252940 A JP2013252940 A JP 2013252940A JP 6413235 B2 JP6413235 B2 JP 6413235B2
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signal
photoelectric conversion
conversion unit
unit
imaging
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Japanese (ja)
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JP2015111762A5 (enExample
JP2015111762A (ja
Inventor
寛信 村田
寛信 村田
史郎 綱井
史郎 綱井
栗山　孝司
孝司 栗山
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Nikon Corp
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Nikon Corp
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Priority to JP2013252940A priority Critical patent/JP6413235B2/ja
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to PCT/JP2014/081791 priority patent/WO2015083674A1/ja
Priority to CN201480073715.8A priority patent/CN106416229B/zh
Priority to CN201910767768.4A priority patent/CN110365921B/zh
Priority to EP14868028.3A priority patent/EP3079356A4/en
Publication of JP2015111762A publication Critical patent/JP2015111762A/ja
Priority to US15/261,049 priority patent/US10205901B2/en
Publication of JP2015111762A5 publication Critical patent/JP2015111762A5/ja
Application granted granted Critical
Publication of JP6413235B2 publication Critical patent/JP6413235B2/ja
Priority to US16/185,638 priority patent/US10798325B2/en
Priority to US17/010,099 priority patent/US20200404200A1/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/51—Control of the gain
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
    • H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/7795—Circuitry for generating timing or clock signals
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/60—Control of cameras or camera modules
    • H04N23/67—Focus control based on electronic image sensor signals
    • H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2013252940A 2013-12-06 2013-12-06 撮像素子および撮像装置 Active JP6413235B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2013252940A JP6413235B2 (ja) 2013-12-06 2013-12-06 撮像素子および撮像装置
CN201480073715.8A CN106416229B (zh) 2013-12-06 2014-12-01 拍摄元件以及拍摄装置
CN201910767768.4A CN110365921B (zh) 2013-12-06 2014-12-01 电子设备
EP14868028.3A EP3079356A4 (en) 2013-12-06 2014-12-01 Imaging element and imaging device
PCT/JP2014/081791 WO2015083674A1 (ja) 2013-12-06 2014-12-01 撮像素子および撮像装置
US15/261,049 US10205901B2 (en) 2013-12-06 2016-09-09 Electronic device with image sensor and control unit
US16/185,638 US10798325B2 (en) 2013-12-06 2018-11-09 Electronic device with image sensor that includes photoelectric converting sections that start to store eletrical charge at different timings
US17/010,099 US20200404200A1 (en) 2013-12-06 2020-09-02 Image sensor and imaging apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013252940A JP6413235B2 (ja) 2013-12-06 2013-12-06 撮像素子および撮像装置

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JP2018189526A Division JP7094852B2 (ja) 2018-10-04 2018-10-04 撮像素子および撮像装置

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JP2015111762A JP2015111762A (ja) 2015-06-18
JP2015111762A5 JP2015111762A5 (enExample) 2016-12-28
JP6413235B2 true JP6413235B2 (ja) 2018-10-31

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US (3) US10205901B2 (enExample)
EP (1) EP3079356A4 (enExample)
JP (1) JP6413235B2 (enExample)
CN (2) CN110365921B (enExample)
WO (1) WO2015083674A1 (enExample)

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Also Published As

Publication number Publication date
EP3079356A4 (en) 2017-08-16
CN110365921B (zh) 2023-12-12
US20190104266A1 (en) 2019-04-04
US20160381313A1 (en) 2016-12-29
CN106416229A (zh) 2017-02-15
CN110365921A (zh) 2019-10-22
US10205901B2 (en) 2019-02-12
US20200404200A1 (en) 2020-12-24
WO2015083674A1 (ja) 2015-06-11
EP3079356A1 (en) 2016-10-12
CN106416229B (zh) 2019-09-10
US10798325B2 (en) 2020-10-06
JP2015111762A (ja) 2015-06-18

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