JP6413235B2 - 撮像素子および撮像装置 - Google Patents
撮像素子および撮像装置 Download PDFInfo
- Publication number
- JP6413235B2 JP6413235B2 JP2013252940A JP2013252940A JP6413235B2 JP 6413235 B2 JP6413235 B2 JP 6413235B2 JP 2013252940 A JP2013252940 A JP 2013252940A JP 2013252940 A JP2013252940 A JP 2013252940A JP 6413235 B2 JP6413235 B2 JP 6413235B2
- Authority
- JP
- Japan
- Prior art keywords
- signal
- photoelectric conversion
- conversion unit
- unit
- imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003384 imaging method Methods 0.000 title claims description 140
- 238000006243 chemical reaction Methods 0.000 claims description 171
- 238000012545 processing Methods 0.000 claims description 39
- 238000012546 transfer Methods 0.000 claims description 31
- 238000009825 accumulation Methods 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 6
- 230000000875 corresponding effect Effects 0.000 description 39
- 238000010586 diagram Methods 0.000 description 15
- 230000035945 sensitivity Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 230000003321 amplification Effects 0.000 description 8
- 238000003199 nucleic acid amplification method Methods 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 101150026505 Ramp1 gene Proteins 0.000 description 4
- 238000005375 photometry Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 101150083298 Ramp2 gene Proteins 0.000 description 2
- 101150024504 Ramp3 gene Proteins 0.000 description 2
- 101100434411 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) ADH1 gene Proteins 0.000 description 2
- 101150102866 adc1 gene Proteins 0.000 description 2
- 101150042711 adc2 gene Proteins 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/51—Control of the gain
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/58—Control of the dynamic range involving two or more exposures
- H04N25/581—Control of the dynamic range involving two or more exposures acquired simultaneously
- H04N25/585—Control of the dynamic range involving two or more exposures acquired simultaneously with pixels having different sensitivities within the sensor, e.g. fast or slow pixels or pixels having different sizes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
- H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/7795—Circuitry for generating timing or clock signals
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/60—Control of cameras or camera modules
- H04N23/67—Focus control based on electronic image sensor signals
- H04N23/672—Focus control based on electronic image sensor signals based on the phase difference signals
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
特許文献1 特開2006−303752号公報
Claims (15)
- 光が入射される第1領域において複数配置され、光を電荷に変換する第1光電変換部と、光が入射される第2領域において複数配置され、光を電荷に変換する第2光電変換部と、前記第1領域において第1方向と前記第1方向に交差する第2方向とにそれぞれ配置されている複数の前記第1光電変換部に接続され、前記第1光電変換部で変換された電荷により生成される第1信号が出力される第1信号線と、前記第2領域において前記第1方向と前記第2方向とにそれぞれ配置されている複数の前記第2光電変換部に接続され、前記第2光電変換部で変換される電荷により生成される第2信号が出力される第2信号線と、を有する撮像素子と、
前記第1光電変換部で変換された電荷の蓄積を開始した後に前記第2光電変換部で変換された電荷の蓄積を開始し、前記第1信号線への前記第1信号の出力が終了する前に前記第2信号線への前記第2信号の出力を開始するように前記撮像素子を制御する制御部と、
を備える電子機器。 - 前記制御部は、前記第1光電変換部で変換された電荷の蓄積が終了してから前記第1信号が前記第1信号線に出力されるまでの時間と、前記第2光電変換部で変換された電荷の蓄積が終了してから前記第2信号が前記第2信号線に出力されるまでの時間と、が略同じになるように前記撮像素子を制御する請求項1に記載の電子機器。
- 前記制御部は、前記第1信号が前記第1信号線に出力されるタイミングと、前記第2信号が前記第2信号線に出力されるタイミングと、が異なるように前記撮像素子を制御する請求項1又は請求項2に記載の電子機器。
- 前記撮像素子は、前記第1光電変換部の電荷を転送するための第1転送制御信号が出力される第1転送制御線と、前記第2光電変換部の電荷を転送するための第2転送制御信号が出力される第2転送制御線と、を有し、
前記制御部は、前記第1転送制御信号を、前記第2転送制御信号が前記第2転送制御線に出力されるタイミングとは異なるタイミングで前記第1転送制御線に出力する請求項1から請求項3のいずれか一項に記載の電子機器。 - 前記撮像素子は、前記第1転送制御線に接続され、前記第1転送制御信号により前記第1光電変換部の電荷を転送する複数の第1転送部と、前記第2転送制御線に接続され、前記第2転送制御信号により前記第2光電変換部の電荷を転送する複数の第2転送部と、を有し、
前記第1転送部は、前記第1領域において複数配置されている前記第1光電変換部ごとに配置され、
前記第2転送部は、前記第2領域において複数配置されている前記第2光電変換部ごとに配置される請求項4に記載の電子機器。 - 前記撮像素子は、前記第1光電変換部の電荷が転送される第1フローティングディフュージョンと、前記第1フローティングディフュージョンの電位をリセットするための第1リセット制御信号が出力される第1リセット制御線と、前記第2光電変換部の電荷が転送される第2フローティングディフュージョンと、前記第2フローティングディフュージョンの電位をリセットするための第2リセット制御信号が出力される第2リセット制御線と、を有し、
前記制御部は、前記第1リセット制御信号を、前記第2リセット制御信号が前記第2リセット制御線に出力されるタイミングとは異なるタイミングで前記第1リセット制御線に出力する請求項1から請求項5のいずれか一項に記載の電子機器。 - 前記撮像素子は、前記第1リセット制御線に接続され、前記第1リセット制御信号により前記第1フローティングディフュージョンの電位をリセットする複数の第1リセット部と、前記第2リセット制御線に接続され、前記第2リセット制御信号により前記第2フローティングディフュージョンの電位をリセットする複数の第2リセット部と、を有する請求項6に記載の電子機器。
- 前記撮像素子は、前記第1信号線に出力された信号をデジタル信号に変換する第1変換部と、前記第2信号線に出力された信号をデジタル信号に変換する第2変換部と、を有する請求項1から請求項7のいずれか一項に記載の電子機器。
- 前記撮像素子は、前記第1変換部に接続され、第1ランプ信号が供給される第1供給線と、前記第2変換部に接続され、前記第1ランプ信号とは異なる傾きを有する第2ランプ信号が供給される第2供給線と、を有する請求項8に記載の電子機器。
- 前記制御部は、前記第1ランプ信号を、前記第2ランプ信号が前記第2供給線に出力されるタイミングとは異なるタイミングで前記第1供給線に出力する請求項9に記載の電子機器。
- 前記撮像素子は、前記第1光電変換部と前記第2光電変換部とが配置される撮像チップと、前記第1変換部と前記第2変換部とが配置される前記撮像チップとは異なる信号処理チップとにより構成される請求項8から請求項10のいずれか一項に記載の電子機器。
- 前記制御部は、前記信号処理チップに形成される請求項11に記載の電子機器。
- 前記撮像チップは、前記信号処理チップに積層される請求項11又は請求項12に記載の電子機器。
- 前記撮像素子は、前記第1変換部で変換されたデジタル信号を記憶する第1記憶部と、前記第2変換部で変換されたデジタル信号を記憶する第2記憶部と、を有し、
前記第1記憶部及び前記第2記憶部は、前記撮像チップ及び前記信号処理チップとは異なるメモリチップに形成される請求項11から請求項13のいずれか一項に記載の電子機器。 - 前記撮像チップは、前記信号処理チップに積層され、
前記信号処理チップは、前記メモリチップに積層される請求項14に記載の電子機器。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013252940A JP6413235B2 (ja) | 2013-12-06 | 2013-12-06 | 撮像素子および撮像装置 |
CN201480073715.8A CN106416229B (zh) | 2013-12-06 | 2014-12-01 | 拍摄元件以及拍摄装置 |
EP14868028.3A EP3079356A4 (en) | 2013-12-06 | 2014-12-01 | Imaging element and imaging device |
CN201910767768.4A CN110365921B (zh) | 2013-12-06 | 2014-12-01 | 电子设备 |
PCT/JP2014/081791 WO2015083674A1 (ja) | 2013-12-06 | 2014-12-01 | 撮像素子および撮像装置 |
US15/261,049 US10205901B2 (en) | 2013-12-06 | 2016-09-09 | Electronic device with image sensor and control unit |
US16/185,638 US10798325B2 (en) | 2013-12-06 | 2018-11-09 | Electronic device with image sensor that includes photoelectric converting sections that start to store eletrical charge at different timings |
US17/010,099 US20200404200A1 (en) | 2013-12-06 | 2020-09-02 | Image sensor and imaging apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013252940A JP6413235B2 (ja) | 2013-12-06 | 2013-12-06 | 撮像素子および撮像装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018189526A Division JP7094852B2 (ja) | 2018-10-04 | 2018-10-04 | 撮像素子および撮像装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015111762A JP2015111762A (ja) | 2015-06-18 |
JP2015111762A5 JP2015111762A5 (ja) | 2016-12-28 |
JP6413235B2 true JP6413235B2 (ja) | 2018-10-31 |
Family
ID=53273436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013252940A Active JP6413235B2 (ja) | 2013-12-06 | 2013-12-06 | 撮像素子および撮像装置 |
Country Status (5)
Country | Link |
---|---|
US (3) | US10205901B2 (ja) |
EP (1) | EP3079356A4 (ja) |
JP (1) | JP6413235B2 (ja) |
CN (2) | CN110365921B (ja) |
WO (1) | WO2015083674A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108028897B (zh) * | 2015-09-30 | 2021-04-16 | 株式会社尼康 | 拍摄元件和电子照相机 |
DE112017001115T5 (de) * | 2016-03-02 | 2018-11-22 | Sony Corporation | Bildgebungssteuereinheit, Bildgebungseinrichtung und Bildgebungssteuerverfahren |
JP6760374B2 (ja) * | 2016-06-30 | 2020-09-23 | 株式会社ニコン | 撮像装置 |
DE102016212797A1 (de) * | 2016-07-13 | 2018-01-18 | Robert Bosch Gmbh | Lichtsensormodul, Verfahren zum Betreiben eines Lichtsensormoduls und Verfahren zum Herstellen eines Lichtsensormoduls |
JP6808564B2 (ja) * | 2017-04-07 | 2021-01-06 | キヤノン株式会社 | 信号処理装置及び方法、撮像素子、及び撮像装置 |
JP6836486B2 (ja) * | 2017-09-20 | 2021-03-03 | 浜松ホトニクス株式会社 | 位置検出センサ |
WO2020179302A1 (ja) | 2019-03-07 | 2020-09-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
JP7286431B2 (ja) | 2019-06-20 | 2023-06-05 | キヤノン株式会社 | 光電変換装置、光電変換システム、および移動体 |
WO2021012071A1 (zh) * | 2019-07-19 | 2021-01-28 | 深圳市汇顶科技股份有限公司 | 图像传感器以及相关芯片及电子装置 |
BR112022011723A2 (pt) | 2019-12-27 | 2022-09-06 | Chugai Pharmaceutical Co Ltd | Anticorpo anti-ctla-4 e uso do mesmo |
BR112023023480A2 (pt) | 2021-06-25 | 2024-01-30 | Chugai Pharmaceutical Co Ltd | Uso de anticorpo anti-ctla-4 |
BR112023022992A2 (pt) | 2021-06-25 | 2024-01-23 | Chugai Pharmaceutical Co Ltd | Anticorpo anti-ctla-4 |
WO2023149417A1 (ja) * | 2022-02-07 | 2023-08-10 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7382407B2 (en) * | 2002-08-29 | 2008-06-03 | Micron Technology, Inc. | High intrascene dynamic range NTSC and PAL imager |
JP4311181B2 (ja) * | 2003-12-05 | 2009-08-12 | ソニー株式会社 | 半導体装置の制御方法および信号処理方法並びに半導体装置および電子機器 |
JP4449565B2 (ja) | 2004-05-12 | 2010-04-14 | ソニー株式会社 | 物理量分布検知の半導体装置 |
JP2006303752A (ja) | 2005-04-19 | 2006-11-02 | Sony Corp | 撮像装置 |
JP4654857B2 (ja) * | 2005-09-26 | 2011-03-23 | ソニー株式会社 | Da変換装置、ad変換装置、半導体装置 |
JP4744343B2 (ja) * | 2006-04-10 | 2011-08-10 | ソニー株式会社 | 固体撮像装置および固体撮像装置の駆動方法 |
JP4961982B2 (ja) * | 2006-12-07 | 2012-06-27 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法および撮像装置 |
JP2008164367A (ja) * | 2006-12-27 | 2008-07-17 | Matsushita Electric Ind Co Ltd | 固体撮像装置、カメラ、車両及び監視装置 |
US7989745B2 (en) * | 2007-10-01 | 2011-08-02 | Nikon Corporation | Solid-state imaging device with focus detection and electronic camera with focus adjustment |
US7755689B2 (en) * | 2007-10-05 | 2010-07-13 | Teledyne Licensing, Llc | Imaging system with low noise pixel array column buffer |
JP4774064B2 (ja) * | 2008-02-07 | 2011-09-14 | シャープ株式会社 | A/d変換回路及び固体撮像装置 |
JP5262823B2 (ja) * | 2009-02-23 | 2013-08-14 | ソニー株式会社 | 固体撮像装置および電子機器 |
JP5521721B2 (ja) * | 2009-08-28 | 2014-06-18 | ソニー株式会社 | 撮像素子およびカメラシステム |
TWI559763B (zh) | 2009-10-01 | 2016-11-21 | 索尼半導體解決方案公司 | 影像取得裝置及照相機系統 |
US8606051B2 (en) * | 2010-08-16 | 2013-12-10 | SK Hynix Inc. | Frame-wise calibration of column-parallel ADCs for image sensor array applications |
EP2708021B1 (en) * | 2011-05-12 | 2019-07-10 | DePuy Synthes Products, Inc. | Image sensor with tolerance optimizing interconnects |
JP5808162B2 (ja) * | 2011-06-23 | 2015-11-10 | キヤノン株式会社 | 撮像素子、撮像装置及び撮像素子の駆動方法 |
JP5868049B2 (ja) * | 2011-07-19 | 2016-02-24 | キヤノン株式会社 | 撮像装置 |
JP2013055500A (ja) * | 2011-09-02 | 2013-03-21 | Sony Corp | 固体撮像素子およびカメラシステム |
JP5871531B2 (ja) * | 2011-09-08 | 2016-03-01 | キヤノン株式会社 | 撮像装置、撮像システム |
JP2015035637A (ja) | 2011-11-30 | 2015-02-19 | パナソニック株式会社 | 固体撮像装置およびカメラ |
TWI530183B (zh) * | 2011-12-08 | 2016-04-11 | Sony Corp | An imaging element, a control method, and an imaging device |
JP2015039086A (ja) * | 2011-12-16 | 2015-02-26 | パナソニック株式会社 | 固体撮像装置、撮像装置 |
JP6164846B2 (ja) * | 2012-03-01 | 2017-07-19 | キヤノン株式会社 | 撮像装置、撮像システム、撮像装置の駆動方法 |
JP5893572B2 (ja) * | 2012-03-01 | 2016-03-23 | キヤノン株式会社 | 撮像装置、撮像システム、撮像装置の駆動方法 |
JP5847737B2 (ja) * | 2012-03-30 | 2016-01-27 | キヤノン株式会社 | 光電変換装置および撮像システム |
FR2989219B1 (fr) * | 2012-04-04 | 2015-05-29 | Commissariat Energie Atomique | Circuit de traitement de pixels |
JP2014165396A (ja) * | 2013-02-26 | 2014-09-08 | Sony Corp | 固体撮像装置および電子機器 |
US20140326856A1 (en) * | 2013-05-06 | 2014-11-06 | Omnivision Technologies, Inc. | Integrated circuit stack with low profile contacts |
US9531967B2 (en) * | 2013-12-31 | 2016-12-27 | Faro Technologies, Inc. | Dynamic range of a line scanner having a photosensitive array that provides variable exposure |
-
2013
- 2013-12-06 JP JP2013252940A patent/JP6413235B2/ja active Active
-
2014
- 2014-12-01 EP EP14868028.3A patent/EP3079356A4/en active Pending
- 2014-12-01 WO PCT/JP2014/081791 patent/WO2015083674A1/ja active Application Filing
- 2014-12-01 CN CN201910767768.4A patent/CN110365921B/zh active Active
- 2014-12-01 CN CN201480073715.8A patent/CN106416229B/zh active Active
-
2016
- 2016-09-09 US US15/261,049 patent/US10205901B2/en active Active
-
2018
- 2018-11-09 US US16/185,638 patent/US10798325B2/en active Active
-
2020
- 2020-09-02 US US17/010,099 patent/US20200404200A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN106416229B (zh) | 2019-09-10 |
CN110365921B (zh) | 2023-12-12 |
JP2015111762A (ja) | 2015-06-18 |
US20160381313A1 (en) | 2016-12-29 |
EP3079356A4 (en) | 2017-08-16 |
WO2015083674A1 (ja) | 2015-06-11 |
CN110365921A (zh) | 2019-10-22 |
EP3079356A1 (en) | 2016-10-12 |
US20190104266A1 (en) | 2019-04-04 |
US10798325B2 (en) | 2020-10-06 |
US20200404200A1 (en) | 2020-12-24 |
CN106416229A (zh) | 2017-02-15 |
US10205901B2 (en) | 2019-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6413235B2 (ja) | 撮像素子および撮像装置 | |
JP6593468B2 (ja) | 撮像素子、撮像装置、および電子機器 | |
US11418747B2 (en) | Imaging sensor and imaging device with column ADC | |
JP2015162735A (ja) | 撮像装置 | |
JP2020061758A (ja) | 撮像素子及び撮像装置 | |
JP7094852B2 (ja) | 撮像素子および撮像装置 | |
JP7156353B2 (ja) | 撮像素子および撮像装置 | |
JP6366325B2 (ja) | 撮像システム | |
JP6320132B2 (ja) | 撮像システム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161110 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161110 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180130 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180329 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180523 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180904 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180917 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6413235 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |