WO2015012234A1 - 異方導電性部材の製造方法および異方導電性接合パッケージの製造方法 - Google Patents

異方導電性部材の製造方法および異方導電性接合パッケージの製造方法 Download PDF

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WO2015012234A1
WO2015012234A1 PCT/JP2014/069239 JP2014069239W WO2015012234A1 WO 2015012234 A1 WO2015012234 A1 WO 2015012234A1 JP 2014069239 W JP2014069239 W JP 2014069239W WO 2015012234 A1 WO2015012234 A1 WO 2015012234A1
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Prior art keywords
anisotropic conductive
conductive member
residual stress
base material
stress relaxation
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PCT/JP2014/069239
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English (en)
French (fr)
Japanese (ja)
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佑介 小沢
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富士フイルム株式会社
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Priority to JP2015528275A priority Critical patent/JP6030241B2/ja
Priority to CN201480041699.4A priority patent/CN105431987A/zh
Priority to KR1020167001900A priority patent/KR101795538B1/ko
Priority to EP14830337.3A priority patent/EP3026764A4/en
Publication of WO2015012234A1 publication Critical patent/WO2015012234A1/ja
Priority to US15/003,154 priority patent/US20160138180A1/en

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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/24—Chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/006—Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/045—Anodisation of aluminium or alloys based thereon for forming AAO templates
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/20—Electrolytic after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/16—Pretreatment, e.g. desmutting
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Definitions

  • the present invention relates to a method for manufacturing an anisotropic conductive member and a method for manufacturing an anisotropic conductive joint package.
  • An anisotropic conductive member is inserted between an electronic component such as a semiconductor element and a circuit board, and an electrical connection between the electronic component and the circuit board can be obtained simply by applying pressure. It is widely used as an inspection connector for functionally inspecting electronic components such as electrical connection members and semiconductor elements.
  • Patent Document 1 states that “in the insulating base material, a plurality of conductive paths made of conductive members penetrate the insulating base material in the thickness direction while being insulated from each other, and each conductive path An anisotropic conductive member provided with one end exposed at one surface of the insulating base material and the other end of each conductive path exposed at the other surface of the insulating base material, and the density of the conductive paths is An anisotropic conductive member that is a structure made of an anodized film of an aluminum substrate having a micropore of 2 million pieces / mm 2 or more ”is disclosed.
  • Patent Document 2 states that “a step of filling the through hole with metal by electrolytic plating so that the virtual filling rate of the metal (conduction path) into the through hole (micropore) is greater than 100%; and And a step of removing metal adhering to the surface of the insulating base material by electrolytic plating treatment by polishing treatment, and attaching to the surface of the insulating base material and the average crystal particle diameter of the metal filled in the through holes
  • a method for producing a metal-filled microstructure anisotropic conductive member, characterized in that the electrolytic plating process is performed so that the difference between the average crystal particle diameter of the metal and the metal particle diameter is 20 nm or less.
  • the anisotropic conductive member of Patent Document 1 in the manufacturing process, for example, when a plurality of conduction paths are provided so as to penetrate the insulating base material, residual stress is accumulated inside, and heat is generated from the outside. There is a possibility that the insulating base material may be damaged by applying energy such as. For this reason, for example, when a wiring for connecting an electronic component to an anisotropic conductive member is formed, damage (for example, a crack or the like) occurs due to heat at the time of wiring formation, and the yield of a mounted product is reduced. was there.
  • an anisotropic conductive member is manufactured so that a large residual stress does not occur.
  • This invention makes it a subject to provide the manufacturing method of the anisotropically conductive member which can suppress the failure
  • this invention provides the manufacturing method of the anisotropic conductive member of the following structures, and the manufacturing method of an anisotropic conductive junction package.
  • a method for producing an anisotropic conductive member comprising a residual stress relaxation step for obtaining an anisotropic conductive member subjected to a treatment for relaxing residual stress.
  • a conductive material is applied to the anisotropic conductive member obtained by the method for manufacturing an anisotropic conductive member according to any one of (1) to (9), and at least one of the plurality of conduction paths
  • a method for manufacturing an anisotropic conductive joint package comprising: a connection part forming step for obtaining an anisotropic conductive joint package having a connection part connected to the substrate.
  • the present invention it is possible to provide a method for manufacturing an anisotropic conductive member and a method for manufacturing an anisotropic conductive joint package that can suppress the damage of the insulating base material.
  • FIG. 1A is a simplified view showing an example of a preferred embodiment of an anisotropic conductive member
  • FIG. 1A is a front view
  • FIG. 1B is a cross-sectional view taken along a section line Ib-Ib in FIG. It is.
  • It is explanatory drawing of the method of calculating the regularization degree of a micropore.
  • It is sectional drawing explaining an example of the manufacturing method of the anisotropically conductive member of this invention.
  • It is a figure which shows an example of an anisotropically conductive joining package.
  • the manufacturing method of the anisotropic conductive member of this invention and the manufacturing method of an anisotropic conductive junction package are demonstrated in detail.
  • the anisotropic conductive member manufacturing method of the present invention the anisotropic conductive member used in the residual stress relaxation step described later is formed by filling a plurality of micropores of an insulating substrate made of an anodized film with a conductive member.
  • FIG. 1 is a simplified diagram showing an example of a preferred embodiment of an anisotropic conductive member.
  • FIG. 1 (A) is a front view
  • FIG. 1 (B) is a section line Ib-Ib in FIG. 1 (A). It is sectional drawing seen from.
  • the anisotropic conductive member 1 includes a plurality of conductive paths 3 made of an insulating base material 2 and a conductive member.
  • the insulating substrate 2 has a plurality of micropores 4 penetrating in the thickness direction Z, and a plurality of conduction paths 3 are filled in the plurality of micropores 4.
  • the plurality of conductive paths 3 are provided in the plurality of micropores 4 from at least one surface of the insulating substrate 2 to the other surface.
  • each conduction path 3 protrudes from the other surface 2 b of the insulating base material 2. That is, it is preferable that both ends of each conduction path 3 have the protruding portions 3a and 3b protruding from 2a and 2b which are the main surfaces of the insulating base material.
  • the insulating base material constituting the anisotropic conductive member is a structure made of an anodized film of an aluminum substrate having micropores, and functions to maintain the insulation in the planar direction.
  • the thickness of the insulating base material (the thickness of the entire portion represented by reference numeral 6 in FIG. 1B) is preferably in the range of 1 to 1000 ⁇ m, preferably 5 to 500 ⁇ m. More preferably, it is within the range, and even more preferably within the range of 10 to 300 ⁇ m.
  • the thickness of the insulating base material is 1 ⁇ m or more, the handling of the insulating base material is good, and when the thickness of the insulating base material is 1000 ⁇ m or less, residual stress is easily generated in the manufacturing method of the anisotropic conductive member described later. Can be relaxed.
  • the following formula (i) ) Is preferably 50% or more, more preferably 70% or more, and still more preferably 80% or more.
  • A represents the total number of micropores in the measurement range.
  • B is centered on the center of gravity of one micropore, and when a circle with the shortest radius inscribed in the edge of another micropore is drawn, the center of gravity of the micropore other than the one micropore is placed inside the circle. This represents the number in the measurement range of the one micropore to be included.
  • FIG. 2 is an explanatory diagram of a method for calculating the degree of ordering of pores.
  • the above formula (1) will be described more specifically with reference to FIG.
  • a micropore 101 shown in FIG. 2 (A) draws a circle 103 (inscribed in the micropore 102) having the shortest radius that is centered on the center of gravity of the micropore 101 and inscribed in the edge of another micropore.
  • the center of gravity of the micropores other than the micropores 101 is included in the circle 3. Therefore, the micropore 101 is included in B.
  • the micropore 104 shown in FIG. 2 (B) draws a circle 106 (inscribed in the micropore 105) having the shortest radius centered on the center of gravity of the micropore 104 and inscribed in the edge of another micropore.
  • the center of gravity of the micropores other than the micropores 104 is included inside the circle 106. Therefore, the micropore 104 is not included in B.
  • the micropore 107 shown in FIG. 2B is centered on the center of gravity of the micropore 107 and has the shortest radius 109 inscribed in the edge of another micropore (inscribed in the micropore 108). Is drawn, the circle 109 includes seven centroids of micropores other than the micropore 107. Therefore, the micropore 107 is not included in B.
  • the micropores do not have a branch structure, that is, the number A of micropores per unit area of one surface of the anodized film and the unit of another surface
  • the width between the conductive paths in the insulating base material is preferably 10 nm or more, and preferably 20 to 200 nm. Is more preferable.
  • the insulating substrate sufficiently functions as an insulating partition.
  • the insulating base material can be produced, for example, by anodizing an aluminum substrate and penetrating micropores generated by the anodization.
  • alumina which is a material of an anodic oxide film of aluminum, has an electrical resistivity of 10 14 ⁇ ⁇ cm as in the case of an insulating base material (for example, a thermoplastic elastomer) that constitutes a conventionally known anisotropic conductive film or the like.
  • anodizing and penetrating treatment steps will be described in detail in the method for manufacturing an anisotropic conductive member of the present invention described later.
  • the conduction path constituting the anisotropic conductive member is made of a conductive member and functions as a conduction path that conducts electricity in the thickness direction of the insulating substrate.
  • the conductive member is not particularly limited as long as the electrical resistivity is 10 3 ⁇ ⁇ cm or less, and specific examples thereof include gold (Au), silver (Ag), copper (Cu), aluminum (Al ), Magnesium (Mg), nickel (Ni), indium-doped tin oxide (ITO), and the like.
  • gold gold
  • copper gold, aluminum, and nickel
  • copper and gold are more preferable.
  • copper and nickel are preferable because the residual stress can be easily relaxed in the residual stress relaxation step described later.
  • end faces it is more preferable that only the surfaces of the conductive path exposed from both surfaces of the insulating substrate or the surfaces of the protruding surfaces (hereinafter also referred to as “end faces”) are formed of gold.
  • the conducting paths are columnar, and the diameter of all the conducting paths (portion represented by reference numeral 8 in FIG. 1B) is preferably in the range of 5 to 500 nm. It is more preferably within the range of ⁇ 400 nm, even more preferably within the range of 40 to 200 nm, and particularly preferably within the range of 50 to 100 nm. If the diameter of the conduction path is within this range, a sufficient response can be obtained when an electric signal is passed. Therefore, the anisotropic conductive member is more preferably used as an electrical connection member or inspection connector for electronic components. Can be used. Further, if the thickness of the insulating base material is 500 nm or less, the residual stress can be easily relaxed in the residual stress relaxation step described later.
  • the length (length / thickness) of the center line of the conduction path with respect to the thickness of the insulating base material is preferably 1.0 to 1.2, and preferably 1.0 to 1. More preferably, it is 05.
  • the length of the center line of the conduction path with respect to the thickness of the insulating substrate is within this range, it can be evaluated that the conduction path has a straight pipe structure, and a one-to-one response is obtained when an electric signal is passed. Since it can obtain reliably, an anisotropically conductive member can be used more suitably as an inspection connector of an electronic component, or an electrical connection member.
  • the protruded part (The part represented by code
  • the height of the “bump” is preferably 10 to 100 nm, and more preferably 10 to 50 nm. When the height of the bump is within this range, the bondability with the electrode (pad) portion of the electronic component is improved.
  • the conductive paths exist in a state of being insulated from each other by the insulating base material, and the density thereof is 2 million pieces / mm 2 or more and 10 million pieces / mm 2 or more. Of 50 million / mm 2 or more, more preferably 100 million / mm 2 or more. Due to the density of the conduction paths being in this range, anisotropic conductive members can be used as inspection connectors and electrical connection members for electronic components such as semiconductor elements even at the present time when the integration is further advanced. it can.
  • the distance between the centers of adjacent conductive paths is preferably 20 to 500 nm, preferably 40 to 200 nm. It is more preferable that the thickness is 50 to 140 nm. When the pitch is within this range, it is easy to balance the conduction path diameter and the width between the conduction paths (insulating partition wall thickness).
  • the anisotropic conductive member is capable of ensuring electrical conduction at a high density while maintaining high insulation, and further, because the residual stress can be easily relaxed in the residual stress relaxation process described later.
  • the thickness of the conductive substrate is preferably 1 to 1000 ⁇ m, and the diameter of the conductive path is preferably 5 to 500 nm.
  • the manufacturing method of the present invention In the method for manufacturing an anisotropic conductive member of the present invention (hereinafter also simply referred to as “the manufacturing method of the present invention”), a plurality of micropores of an insulating substrate made of an anodized film are filled with a conductive member. After producing the above anisotropic conductive member having a plurality of conduction paths, It is a manufacturing method of an anisotropic conductive member which comprises the residual stress relaxation process which obtains the anisotropic conductive member which performed processing which eases residual stress. Next, an example of the manufacturing method of the anisotropically conductive member of the present invention is shown.
  • the method for producing the anisotropic conductive member of the present invention is as follows. An anodizing process for anodizing an aluminum substrate; After the anodizing treatment step, a plurality of pores generated by the anodizing are penetrated to obtain an insulating substrate having a plurality of micropores, After the penetration process step, a conductive path forming step of forming a plurality of conductive paths by filling the inside of the plurality of micropores in the obtained insulating base material with a conductive member; and It is preferable to provide the residual stress relaxation process which obtains the anisotropically conductive member which performed the process which relaxes a residual stress after the said conduction path formation process. Next, each process process is explained in full detail about the manufacturing method of this invention.
  • the aluminum substrate used in the production method of the present invention is not particularly limited, and specific examples thereof include a pure aluminum plate; an alloy plate containing aluminum as a main component and a trace amount of foreign elements; low-purity aluminum (for example, recycled material) ) On which a high-purity aluminum is deposited; a substrate on which the surface of silicon wafer, quartz, glass or the like is coated with high-purity aluminum by a method such as vapor deposition or sputtering; a resin substrate on which aluminum is laminated;
  • the surface on which the anodized film is provided by an anodizing process described later preferably has an aluminum purity of 99.5% by mass or more, and 99.9% by mass or more. Is more preferable, and it is still more preferable that it is 99.99 mass% or more. When the aluminum purity is in the above range, the regularity of the micropore array is sufficient.
  • the surface which performs the anodic oxidation process mentioned later among aluminum substrates performs a degreasing process and a mirror surface finishing process previously.
  • the same treatments as those described in paragraphs [0044] to [0054] of Patent Document 1 Japanese Patent Laid-Open No. 2008-270158 can be performed. .
  • the anodic oxidation step is a step of forming an oxide film having micropores on the surface of the aluminum substrate by subjecting the aluminum substrate to an anodic oxidation treatment.
  • a conventionally known method can be used for the anodizing treatment in the production method of the present invention. From the viewpoint of increasing the regularity of the pore arrangement and ensuring the insulation of the conductive portion in the planar direction more reliably, It is preferable to use a regularization method or a constant voltage process.
  • each treatment described in paragraphs [0056] to [0108] and [FIG. 3] of Patent Document 1 Japanese Patent Laid-Open No. 2008-270158
  • the same processing can be performed.
  • the penetrating treatment step is a step of obtaining an insulating base material having a plurality of micropores by penetrating a plurality of pores generated by the anodizing after the anodizing treatment step.
  • the penetration treatment step for example, after the anodizing treatment step, a method of dissolving the aluminum substrate and removing the bottom of the anodized film; after the anodizing treatment step, the aluminum substrate and And a method of cutting an anodic oxide film in the vicinity of the aluminum substrate.
  • these methods in the penetration processing step are described in, for example, paragraphs [0110] to [0121] and [FIG. 3] and [FIG. 4] of Patent Document 1 (Japanese Patent Laid-Open No. 2008-270158). The method similar to each method mentioned above is mentioned.
  • an insulating substrate 2 having a plurality of micropores 4 penetrating in the thickness direction is obtained.
  • the insulating base material 2 thus obtained has the same configuration as that described in the anisotropic conductive member described above.
  • the conduction path forming step is a step of forming a plurality of conduction paths by filling a metal which is a conductive member into a plurality of micropores in the obtained insulating base material after the penetration process step. is there.
  • the metal to be filled is the same as that described in the anisotropic conductive member described above.
  • the method of filling the micropore with a metal is similar to, for example, the methods described in paragraphs [0123] to [0126] and [FIG. 4] of Patent Document 1 (Japanese Patent Laid-Open No. 2008-270158). A method is mentioned.
  • an insulating base material having a plurality of micropores was obtained after the above-described penetration processing step, but the inner peripheral surface of the plurality of micropores was strictly in the thickness direction of the insulating base material. Does not extend in parallel, and has a slightly non-uniform shape, for example, slightly inwardly inclined from one surface side of the insulating base to the other surface side. For this reason, when a conduction path is formed inside a plurality of micropores by the above-described conduction path forming step, the force generated between the inner peripheral surface of the plurality of micropores and the outer peripheral surface of the conduction path is uneven depending on the position. It becomes.
  • the inner peripheral surfaces of the plurality of micropores are slightly inwardly inclined from one surface side of the insulating base to the other surface side, as shown in FIG.
  • the force generated between the inner peripheral surface of the plurality of micropores and the outer peripheral surface of the conduction path increases as the distance from one surface 2a to the other surface 2b of the insulating base material increases.
  • residual stress arises by the stress difference in the thickness direction of an insulating base material, and the distortion according to this residual stress arises in an insulating base material.
  • the residual stress generated in the conduction path forming step is relaxed by a residual stress relaxation step described later.
  • the insulating base material 2 having the conduction path 3 is obtained by this conduction path forming step.
  • [Surface smoothing] In the manufacturing method of this invention, it is preferable to comprise the surface smoothing process process which smooth
  • CMP chemical mechanical polishing
  • CMP slurry such as PNANERLITE-7000 manufactured by Fujimi Incorporated, GPX HSC800 manufactured by Hitachi Chemical Co., Ltd., CL-1000 manufactured by Asahi Glass (Seimi Chemical) Co., Ltd., or the like can be used. Since it is not desired to polish the anodized film, it is not preferable to use an interlayer insulating film or a slurry for a barrier metal.
  • a trimming process is provided after the surface smoothing process when the conduction path forming process or the CMP process is performed.
  • the trimming process when the conductive path forming process or the CMP process is performed, after the surface smoothing process, only a part of the insulating base material on the surface of the anisotropic conductive member is removed, and the conductive path protrudes. It is a process to make.
  • the trimming process is performed under a condition that does not dissolve the metal constituting the conduction path, and is brought into contact with the acid aqueous solution or the alkaline aqueous solution used when the bottom of the anodic oxide film is removed, for example, immersion method and spraying.
  • an insulating base material 2 having a plurality of conduction paths 3 shown in FIG. 3C is obtained.
  • the said residual stress relaxation process is a process of giving the process which relaxes a residual stress after the said conduction path formation process, and obtaining the said anisotropically conductive member.
  • the process for reducing the residual stress means a process for reducing the residual stress of the insulating base material to 200 MPa or less.
  • the residual stress relaxation step it is preferable to relieve the residual stress by performing a process of dispersing the force generated between the inner peripheral surfaces of the plurality of micropores and the outer peripheral surfaces of the plurality of conduction paths.
  • the residual stress relaxation step can disperse the force generated between the inner peripheral surface of the plurality of micropores and the outer peripheral surface of the conductive path by firing an insulating base material having a plurality of conductive paths.
  • the firing temperature is preferably 50 to 600 ° C., more preferably 100 to 550 ° C., and further preferably 150 to 400 ° C.
  • the firing temperature is 50 ° C. or higher, the residual stress can be reduced, and when the firing temperature is 600 ° C. or lower, it is possible to suppress the normal portion from being greatly deformed by excessive heating.
  • the said residual stress relaxation process bakes an insulating base material, applying a load to at least one of one side and the other side of an insulating base material.
  • the load handling property in view of the durability of adhesion and an insulating substrate with the insulating substrate during loading, the insulating substrate at a pressure of 50g / cm 2 ⁇ 2000g / cm 2
  • the firing temperature is preferably 50 ° C. to 600 ° C., more preferably 100 ° C. to 550 ° C., and even more preferably 150 ° C. to 400 ° C., similarly to the above firing temperature. .
  • a flat plate-like pressurizing portion is applied to one surface 2a of the insulating base material 2 having a plurality of conduction paths 3 obtained by the trimming step. Apply load at 20. At this time, it is preferable to apply a load until the distortion of the insulating base material 2 caused by the residual stress completely returns.
  • the firing in the residual stress relaxation step can be performed in the air, in a vacuum state, in a nitrogen atmosphere, or in an argon atmosphere.
  • the metal constituting the conduction path is oxidized to increase resistance. From the viewpoint of prevention, it is preferable to carry out in a vacuum, a nitrogen atmosphere or an argon atmosphere.
  • the residual stress relaxation step disperses the force generated between the inner peripheral surfaces of the plurality of micropores and the outer peripheral surfaces of the plurality of conduction paths by applying ultrasonic vibration while being immersed in a liquid. It can also be applied. At this time, it is preferable to apply ultrasonic vibration in a state where all of the insulating base material having a plurality of conduction paths obtained by the trimming step is immersed in a liquid.
  • the liquid that immerses the insulating substrate having a plurality of conduction paths for example, water, an aqueous solution, or a liquid organic compound is used, and a liquid organic compound such as isopropyl alcohol (IPA) or methyl ethyl ketone (MEK) is used. It is preferable to use it.
  • IPA isopropyl alcohol
  • MEK methyl ethyl ketone
  • the ultrasonic vibration is preferably applied at 20 kHz to 100 kHz.
  • the ultrasonic vibration is preferably applied for 10 minutes or more, more preferably 100 minutes or more, and further preferably 150 minutes or more. By applying ultrasonic vibration for 10 minutes or more, the residual stress can be greatly reduced.
  • This anisotropic conductive member has a configuration similar to that described in the anisotropic conductive member described above.
  • the same or different conductive metal is further deposited only on the surface of the conductive path 3 shown in FIG. 3B instead of the trimming process or after the trimming process.
  • An electrodeposition treatment step may be included (FIG. 4).
  • the electrodeposition process is a process including an electroless plating process using a difference in electronegativity of different metals.
  • the electroless plating treatment is a step of immersing in an electroless plating treatment solution (for example, a solution obtained by appropriately mixing a noble metal-containing treatment solution having a pH of 1 to 9 and a reducing agent treatment solution having a pH of 6 to 13). is there.
  • the trimming process and the electrodeposition process are performed immediately before using the anisotropic conductive member. It is preferable to perform these treatments immediately before use because the metal of the conduction path constituting the bump portion is not oxidized until just before use.
  • An anisotropic conductive joint package manufactured by the method for manufacturing an anisotropic conductive joint package of the present invention includes an anisotropic conductive member and a conductive material electrically connected to at least one of a plurality of conduction paths. And a connecting portion.
  • FIG. 5A is a schematic perspective view showing an example of a preferred embodiment of the multichip module 11 using the anisotropic conductive joint package 10.
  • FIG. 5B shows the anisotropic conductive joint package 10 extracted from the multichip module 11 of FIG. 5A.
  • a multichip module 11 in FIG. 5A is attached to a circuit board for electrical connection, and includes a base (chip) board 12, two IC chips 13, and an anisotropic conductive joint package 10. And an interposer 14 connected to.
  • the chip substrate 12 is composed of a printed wiring board, and an electrode (not shown) in the printed wiring board is electrically connected to the IC chip 13 via a wiring (not shown).
  • the anisotropic conductive joint package 10 is disposed on the chip substrate 12, and the end of the conductive path 3 exposed on one surface 2a of the insulating base 2 of the anisotropic conductive member 1 has a flat electrode 15a (connection).
  • the electrode 15a is connected to an internal wiring in the interposer 14, and the electrode 15b is connected to the IC chip 13 through a wiring (not shown) of the chip substrate 12.
  • the electrode 15a and the electrode 15b can be easily connected in the thickness direction via the anisotropic conductive member 1, and the interposer 14 and the like can be stacked and arranged.
  • the anisotropic conductive joint package 10 may have a multilayer structure in which connecting portions made of conductive materials and anisotropic conductive members are alternately laminated in the thickness direction, thereby improving heat dissipation and improving device reliability. Can be made.
  • a conductive material is applied to the anisotropic conductive member obtained by the above manufacturing method, and a connection portion connected to at least one of a plurality of conduction paths is provided. It is a manufacturing method of an anisotropic conductive joint package which comprises a connection part formation process which obtains the anisotropic conductive package which has.
  • the conductive material include gold (Au), silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), nickel (Ni), ITO, molybdenum (Mo), Any one or more of iron (Fe), Pd (palladium), beryllium (Be), and rhenium (Re) can be used.
  • the bonding method is not particularly limited, but pressure bonding is preferable and thermocompression bonding is more preferable from the viewpoint of high conductive reliability at the time of bonding. Ultrasonic bonding is also preferable.
  • connection portion is, for example, an electrode, and the electrode may be formed on any member, but is bonded to one surface and the other surface of the anisotropic conductive member described above, and this electrode
  • the electrode is preferably connected to the internal wiring in the interposer.
  • the interposer is also called a conversion board or a rewiring board, and the arrangement of electrodes can be arbitrarily designed according to the arrangement of external electrodes connected to the surface by internal wiring in the board.
  • the members of the interposer other than the electrodes can be manufactured from various plastics such as inorganic compounds such as silicon wafers and GaN substrates, glass fiber impregnation / epoxy resins and polyimide resins.
  • the interposer may be bonded to one surface of the anisotropic conductive bonding package described above, but is preferably bonded to the upper and lower layers using the anisotropic conductive bonding package as an intermediate layer.
  • Example 1 Mirror finish (electropolishing)
  • a high-purity aluminum substrate manufactured by Sumitomo Light Metal Co., Ltd., purity 99.99% by mass, thickness 0.4 mm
  • an electrolytic polishing liquid having the following composition, a voltage of 25 V
  • Electropolishing was performed under conditions of a liquid temperature of 65 ° C. and a liquid flow rate of 3.0 m / min.
  • the cathode was a carbon electrode, and GP0110-30R (manufactured by Takasago Seisakusho Co., Ltd.) was used as the power source.
  • the flow rate of the electrolyte was measured using a vortex type flow monitor FLM22-10PCW (manufactured by ASONE CORPORATION).
  • Electrolytic polishing liquid composition ⁇ 85% by mass phosphoric acid (reagent manufactured by Wako Pure Chemical Industries, Ltd.) 660 mL ⁇ Pure water 160mL ⁇ Sulfuric acid 150mL ⁇ Ethylene glycol 30mL
  • a film removal treatment was performed in which the aluminum substrate after the pre-anodizing treatment was immersed in a mixed aqueous solution (liquid temperature: 50 ° C.) of 0.2 mol / L chromic anhydride and 0.6 mol / L phosphoric acid for 12 hours. Then, re-anodizing treatment was performed for 10 hours with an electrolyte solution of 0.50 mol / L oxalic acid at a voltage of 40 V, a liquid temperature of 15 ° C., and a liquid flow rate of 3.0 m / min to form an oxide film with a film thickness of 80 ⁇ m. Obtained.
  • the cathode was a stainless electrode, and the power supply was GP0110-30R (manufactured by Takasago Seisakusho Co., Ltd.). Further, NeoCool BD36 (manufactured by Yamato Kagaku Co., Ltd.) was used as the cooling device, and Pair Stirrer PS-100 (manufactured by EYELA Tokyo Rika Kikai Co., Ltd.) was used as the stirring and heating device. Furthermore, the flow rate of the electrolytic solution was measured using a vortex flow monitor FLM22-10PCW (manufactured by ASONE Corporation).
  • Electrode film formation process Next, the process which forms an electrode film in one surface of the oxide film after the said heat processing was performed. That is, a 0.7 g / L chloroauric acid aqueous solution was applied to one surface, dried at 140 ° C./1 minute, and further baked at 500 ° C./1 hour to create a gold plating nucleus. Thereafter, a precious fab ACG2000 basic solution / reducing solution (manufactured by Nippon Electroplating Engineers Co., Ltd.) was used as an electroless plating solution, and an immersion treatment was performed at 50 ° C./1 hour to form an electrode film without voids.
  • a precious fab ACG2000 basic solution / reducing solution manufactured by Nippon Electroplating Engineers Co., Ltd.
  • the pulse waveform of constant voltage pulse electrolysis was a rectangular wave. Specifically, the electrolysis treatment of one electrolysis time of 60 seconds was performed five times with a 40-second rest period between each electrolysis treatment so that the total electrolysis treatment time was 300 seconds.
  • (G) Surface smoothing treatment step Next, the surface and back surface of the structure filled with metal are subjected to CMP treatment, and the structure having a film thickness of 80 ⁇ m is polished by 15 ⁇ m from both sides to thereby form an oxide film. The formed electrode film was removed, and the front and back surfaces of the oxide film were smoothed to obtain a structure having a thickness of 50 ⁇ m.
  • the CMP slurry PNANERLITE-7000 manufactured by Fujimi Incorporated was used. When the surface of the structure was observed with FE-SEM after the CMP treatment, it was in a form that the filled metal partially overflowed from the surface of the oxide film.
  • Example 2 An anisotropic conductive member and an anisotropic conductive junction package were produced in the same manner as in Example 1 except that the firing temperature and firing atmosphere were changed according to Table 1.
  • Example 17 An anisotropic conductive member was produced by the same method as in Example 1 except that the conduction path forming step was performed by the method described below. Further, an anisotropic conductive joint package was produced in the same manner as in Example 1 except that nickel was used as the conductive material in the packaging process. [Conducting path formation process] A nickel electrode was brought into close contact with the surface on which the electrode film was formed, and electroplating was performed using the nickel electrode as a cathode and platinum as a positive electrode.
  • Example 18 An anisotropic conductive member and an anisotropic conductive joint package were produced by the same method as in Example 17 except that the firing temperature and firing atmosphere were changed according to Table 1.
  • Example 25 to 27 An anisotropic conductive member was produced by the same method as in Example 1 except that the residual stress relaxation step was performed by the method described below. [Residual stress relaxation process] After the trimming treatment, an anisotropic conductive member and an anisotropic conductive joint package were produced by applying ultrasonic vibration of about 20 to 100 kHz in an isopropyl alcohol (IPA) solution for 150 minutes, 100 minutes, and 10 minutes, respectively.
  • IPA isopropyl alcohol
  • Example 28 to 30 An anisotropic conductive member and an anisotropic conductive joint package were produced by the same method as in Example 17 except that the residual stress relaxation step was performed by the method described below. [Residual stress relaxation process] After the trimming treatment, an anisotropic conductive member was produced by applying ultrasonic vibration of about 20 to 100 kHz in isopropyl alcohol (IPA) solution for 150 minutes, 100 minutes and 10 minutes, respectively.
  • IPA isopropyl alcohol
  • Example 31 An anisotropic conductive member and an anisotropic conductive joint package were produced in the same manner as in Example 13 except that firing was performed without applying a load in the residual stress relaxation step.
  • Example 32 An anisotropic conductive member and an anisotropic conductive joint package were produced in the same manner as in Example 16 except that firing was performed without applying a load in the residual stress relaxation step.
  • Example 33 An anisotropic conductive member and an anisotropic conductive joint package were produced in the same manner as in Example 21 except that firing was performed without applying a load in the residual stress relaxation step.
  • Example 34 An anisotropic conductive member and an anisotropic conductive joint package were produced in the same manner as in Example 24 except that firing was performed without applying a load in the residual stress relaxation step.
  • the residual stress was calculated by the 2 ⁇ ⁇ sin 2 ⁇ method using an X-ray diffractometer (XRD, manufactured by Bruker BioSpin Corporation, D8 Discover with GADDS).
  • the voltage / current was 45 kV / 110 mA
  • the X-ray wavelength was CrK ⁇ ray
  • the X-ray irradiation diameter was 500 ⁇ m
  • the evaluation crystal plane was measured on the Cu (311) plane or Ni (311) plane.
  • Table 1 The results are shown in Table 1 below.
  • the number of cracks was determined by preparing 10 samples of anisotropic conductive bonding packages and observing the internal structure of the anisotropic conductive bonding packages using microfocus X-ray CT (manufactured by Shimadzu Corporation, SMX-160CTS). The number of cracks was determined for each sample, and the average number of cracks was calculated. The results are shown in Table 1 below.
  • the variation in wiring resistance value was obtained by preparing 10 samples of anisotropic conductive joint packages, measuring the wiring resistance 30 times per sample, and calculating the standard deviation of the obtained resistance value ( ⁇ ). The smaller the standard deviation, the better the yield of the anisotropic conductive joint package without any failure during wiring.
  • the measurement of the wiring resistance value confirms that one conductive path is electrically connected by polishing the cross section of the anisotropic conductive film, and the anisotropic conductive junction package in which the electrical connection can be confirmed.
  • the direct current voltage and current were measured using and the resistance value was calculated. The results are shown in Table 1 below.
  • Examples 1 to 24 fired while applying a load in the residual stress relaxation step, the residual stress was greatly reduced as compared with Examples 31 to 34 fired without applying a load. It was found that firing greatly contributes to the reduction of residual stress. Further, in Examples 25 to 30 to which ultrasonic vibration was applied in the residual stress relaxation step, the residual stress was greatly reduced as compared with Comparative Examples 1 and 2 in which ultrasonic waves were not applied, and ultrasonic waves were applied. It was found that greatly contributes to the reduction of residual stress.
  • Examples 1 to 24 where firing was performed while applying a load in the residual stress relaxation step the firing temperature was higher when compared with the same firing atmosphere, metal type of the conductive path, and load conditions. It was found that the residual stress was reduced, and the firing temperature greatly contributed to the reduction of the residual stress.
  • Examples 25 to 30 in which ultrasonic vibration was applied in the residual stress relaxation process the time for which ultrasonic vibration was applied was long when compared with the same conditions of the firing atmosphere and the metal species of the conduction path. It was found that the residual stress decreased, and the time when the ultrasonic vibration was applied greatly contributed to the decrease of the residual stress.
  • Example 1 to 24 where firing is performed in the residual stress relaxation step, the residual stress is reduced to 180 MPa or less regardless of the firing atmosphere, and the residual stress can be obtained in any firing atmosphere of air, nitrogen, argon, or vacuum. It was found that it does not prevent relaxation.
  • the residual stress is reduced to 180 MPa or less regardless of the metal type of the conduction path, and the residual stress can be alleviated by using any of copper and nickel for the conduction path. It turns out that it does not interfere.
  • SYMBOLS 1 Anisotropic conductive member, 2 Insulating base material, 2a One surface of insulating base material, 2b The other surface of insulating base material, 3 Conducting path, 4 Micropore, 4a, 4b Protruding part, 5 base material Inner conductive portion 6 Insulating base material thickness, 7 Width between conductive paths, 8 Diameter of conductive paths, 9 Distance between centers of conductive paths (pitch), 10 Anisotropic conductive joint package, 11 Multichip module, 12 chips Substrate, 13 IC chip, 14 interposer, 15a, 15b electrode, 101, 102, 104, 105, 107, 108 micropore, 103, 106, 109 yen.

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PCT/JP2014/069239 2013-07-22 2014-07-18 異方導電性部材の製造方法および異方導電性接合パッケージの製造方法 WO2015012234A1 (ja)

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WO2020166240A1 (ja) * 2019-02-15 2020-08-20 富士フイルム株式会社 陽極酸化処理方法および異方導電性部材の製造方法
JP2020527649A (ja) * 2017-07-18 2020-09-10 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ 所定間隔を有する複数の（ナノ）チャネルを備えるテンプレートへのバルブ金属層の変換、及びそこにおける所定間隔を有する構造物の形成

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WO2018159186A1 (ja) * 2017-02-28 2018-09-07 富士フイルム株式会社 半導体デバイス、積層体ならびに半導体デバイスの製造方法および積層体の製造方法
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