EP3026764A4 - METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE ELEMENT AND METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE BONDING ENCAPSULATION - Google Patents

METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE ELEMENT AND METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE BONDING ENCAPSULATION

Info

Publication number
EP3026764A4
EP3026764A4 EP14830337.3A EP14830337A EP3026764A4 EP 3026764 A4 EP3026764 A4 EP 3026764A4 EP 14830337 A EP14830337 A EP 14830337A EP 3026764 A4 EP3026764 A4 EP 3026764A4
Authority
EP
European Patent Office
Prior art keywords
fabrication
anisotropic conductive
bonding package
conductive member
conductive bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP14830337.3A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3026764A1 (en
Inventor
Yusuke KOZAWA
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of EP3026764A1 publication Critical patent/EP3026764A1/en
Publication of EP3026764A4 publication Critical patent/EP3026764A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/24—Chemical after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/006—Nanostructures, e.g. using aluminium anodic oxidation templates [AAO]
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/045—Anodisation of aluminium or alloys based thereon for forming AAO templates
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/18—After-treatment, e.g. pore-sealing
    • C25D11/20—Electrolytic after-treatment
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
    • C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/04—Anodisation of aluminium or alloys based thereon
    • C25D11/16—Pretreatment, e.g. desmutting
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Non-Insulated Conductors (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
EP14830337.3A 2013-07-22 2014-07-18 METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE ELEMENT AND METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE BONDING ENCAPSULATION Withdrawn EP3026764A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013151603 2013-07-22
PCT/JP2014/069239 WO2015012234A1 (ja) 2013-07-22 2014-07-18 異方導電性部材の製造方法および異方導電性接合パッケージの製造方法

Publications (2)

Publication Number Publication Date
EP3026764A1 EP3026764A1 (en) 2016-06-01
EP3026764A4 true EP3026764A4 (en) 2016-11-16

Family

ID=52393273

Family Applications (1)

Application Number Title Priority Date Filing Date
EP14830337.3A Withdrawn EP3026764A4 (en) 2013-07-22 2014-07-18 METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE ELEMENT AND METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE BONDING ENCAPSULATION

Country Status (6)

Country Link
US (1) US20160138180A1 (zh)
EP (1) EP3026764A4 (zh)
JP (2) JP6030241B2 (zh)
KR (1) KR101795538B1 (zh)
CN (1) CN105431987A (zh)
WO (1) WO2015012234A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016098865A1 (ja) * 2014-12-19 2016-06-23 富士フイルム株式会社 多層配線基板
CN110226264B (zh) 2017-02-09 2021-12-28 华为技术有限公司 金属壳体连接器
WO2018159186A1 (ja) * 2017-02-28 2018-09-07 富士フイルム株式会社 半導体デバイス、積層体ならびに半導体デバイスの製造方法および積層体の製造方法
EP3431637A1 (en) 2017-07-18 2019-01-23 IMEC vzw Porous solid materials and methods for fabrication
KR102361397B1 (ko) * 2019-01-21 2022-02-10 (주)포인트엔지니어링 프로브 핀 기판 및 이를 이용한 프로브 카드 제조 방법
WO2020166240A1 (ja) * 2019-02-15 2020-08-20 富士フイルム株式会社 陽極酸化処理方法および異方導電性部材の製造方法
CN110261020A (zh) * 2019-06-18 2019-09-20 浙江工业大学 适用于测量非等轴残余应力的四压头组件
CN110317944B (zh) * 2019-06-27 2021-07-13 中国科学院宁波材料技术与工程研究所 残余应力消除装置
KR102606892B1 (ko) * 2021-06-15 2023-11-29 (주)포인트엔지니어링 검사 소켓용 지지 플레이트, 검사 소켓용 소켓핀 및 이들을 구비하는 검사 소켓
CN115615591B (zh) * 2022-08-16 2023-07-21 哈尔滨工业大学 基于多晶元空气耦合换能器的平面应力超声测量方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3120975A1 (de) * 1981-05-26 1982-12-16 Eberhard 7121 Freudental Keller Verfahren zur herstelung eloxierter druckbleche
JPH0277597A (ja) * 1988-09-12 1990-03-16 Nippon Mining Co Ltd リフローめっき材の製造方法
JP2011202194A (ja) * 2010-03-24 2011-10-13 Fujifilm Corp 金属充填微細構造体の製造方法
EP2399694A1 (en) * 2009-02-17 2011-12-28 FUJIFILM Corporation Metal member
JP2013069629A (ja) * 2011-09-26 2013-04-18 Fujifilm Corp 異方導電性部材およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3154713B2 (ja) * 1990-03-16 2001-04-09 株式会社リコー 異方性導電膜およびその製造方法
JPH0547428A (ja) * 1991-08-12 1993-02-26 Ricoh Co Ltd 異方性導電膜およびそれを用いた電子部品の接続方法
JP2004174630A (ja) * 2002-11-26 2004-06-24 Niigata Tlo:Kk 超音波照射による残留引張応力除去と圧縮応力付与方法及びその装置
JP2007204802A (ja) 2006-01-31 2007-08-16 Fujifilm Corp 構造体の製造方法
JP5043621B2 (ja) 2007-03-27 2012-10-10 富士フイルム株式会社 異方導電性部材およびその製造方法
JP2009132974A (ja) * 2007-11-30 2009-06-18 Fujifilm Corp 微細構造体
JP2009244244A (ja) * 2008-03-14 2009-10-22 Fujifilm Corp プローブカード
JP2012078222A (ja) * 2010-10-01 2012-04-19 Fujifilm Corp 回路基板接続構造体および回路基板の接続方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3120975A1 (de) * 1981-05-26 1982-12-16 Eberhard 7121 Freudental Keller Verfahren zur herstelung eloxierter druckbleche
JPH0277597A (ja) * 1988-09-12 1990-03-16 Nippon Mining Co Ltd リフローめっき材の製造方法
EP2399694A1 (en) * 2009-02-17 2011-12-28 FUJIFILM Corporation Metal member
JP2011202194A (ja) * 2010-03-24 2011-10-13 Fujifilm Corp 金属充填微細構造体の製造方法
JP2013069629A (ja) * 2011-09-26 2013-04-18 Fujifilm Corp 異方導電性部材およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 199017, 16 March 1990 Derwent World Patents Index; AN 1990-128608, XP002762582 *
See also references of WO2015012234A1 *

Also Published As

Publication number Publication date
JPWO2015012234A1 (ja) 2017-03-02
EP3026764A1 (en) 2016-06-01
JP6166826B2 (ja) 2017-07-19
JP6030241B2 (ja) 2016-11-24
JP2017022126A (ja) 2017-01-26
KR20160023844A (ko) 2016-03-03
KR101795538B1 (ko) 2017-11-08
CN105431987A (zh) 2016-03-23
US20160138180A1 (en) 2016-05-19
WO2015012234A1 (ja) 2015-01-29

Similar Documents

Publication Publication Date Title
HK1214408A1 (zh) 半導體裝置及其製造方法
HK1202983A1 (zh) 半導體裝置及其製造方法
EP2930741A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
SG11201504442YA (en) Semiconductor device and method of making semiconductor device
EP3026764A4 (en) METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE ELEMENT AND METHOD FOR PRODUCING AN ANISOTROPIC CONDUCTIVE BONDING ENCAPSULATION
EP2985790A4 (en) SEMICONDUCTOR COMPONENT AND SEMICONDUCTOR COMPONENT MANUFACTURING METHOD
HK1204506A1 (zh) 半導體裝置以及半導體裝置的製造方法
EP2980830A4 (en) BONDING DEVICE AND METHOD FOR MANUFACTURING BONDED SUBSTRATE
EP2784810A4 (en) CHIP HOUSING STRUCTURE AND CHIP PACKING METHOD
EP2978019A4 (en) PROCESS FOR PREPARING A BONDED BODY AND METHOD FOR PRODUCING A CURRENT MODULES SUBSTRATE
HK1198783A1 (zh) 製造半導體器件的方法以及半導體器件
HK1202704A1 (zh) 半導體器件的製造方法
HK1219347A1 (zh) 半導體裝置及其製造方法
EP2955748A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
TWI562455B (en) Electronic package and method of forming the same
SG11201508291QA (en) Semiconductor device and method for manufacturing semiconductor device
EP2991108A4 (en) Semiconductor device and method of manufacture thereof
SG11201600043RA (en) Method for bonding of contact surfaces
GB201413054D0 (en) Semiconductor assembly and method of manufacture
SG11201503368TA (en) Method of fabricating semiconductor devices
SG11201510008UA (en) Semiconductor device and manufacturing method therefor
HK1201101A1 (zh) 製造半導體裝置的方法和半導體裝置
HK1206869A1 (zh) 半導體器件及其製造方法
ZA201601921B (en) Bottom-gusseted package and method
EP2985785A4 (en) Semiconductor device and semiconductor device manufacturing method

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20160122

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

RIC1 Information provided on ipc code assigned before grant

Ipc: C25D 11/24 20060101ALI20160615BHEP

Ipc: C25D 1/00 20060101ALI20160615BHEP

Ipc: H01R 11/01 20060101ALI20160615BHEP

Ipc: C25D 11/20 20060101ALI20160615BHEP

Ipc: H01B 13/00 20060101ALI20160615BHEP

Ipc: C25D 11/04 20060101ALI20160615BHEP

Ipc: C25D 3/38 20060101ALN20160615BHEP

Ipc: C25D 11/10 20060101ALN20160615BHEP

Ipc: C25D 11/16 20060101ALN20160615BHEP

Ipc: C25D 11/18 20060101ALI20160615BHEP

Ipc: H01B 5/16 20060101ALI20160615BHEP

Ipc: C23C 18/16 20060101ALN20160615BHEP

Ipc: C25D 5/50 20060101ALI20160615BHEP

Ipc: H01R 43/00 20060101AFI20160615BHEP

DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20161014

RIC1 Information provided on ipc code assigned before grant

Ipc: C25D 3/38 20060101ALN20161007BHEP

Ipc: H01R 11/01 20060101ALI20161007BHEP

Ipc: H01R 43/00 20060101AFI20161007BHEP

Ipc: C25D 11/16 20060101ALN20161007BHEP

Ipc: C25D 11/24 20060101ALI20161007BHEP

Ipc: C25D 11/18 20060101ALI20161007BHEP

Ipc: H01B 5/16 20060101ALI20161007BHEP

Ipc: H01B 13/00 20060101ALI20161007BHEP

Ipc: C25D 11/20 20060101ALI20161007BHEP

Ipc: C25D 11/04 20060101ALI20161007BHEP

Ipc: C25D 1/00 20060101ALI20161007BHEP

Ipc: C25D 11/10 20060101ALN20161007BHEP

Ipc: C25D 5/50 20060101ALI20161007BHEP

Ipc: C23C 18/16 20060101ALN20161007BHEP

17Q First examination report despatched

Effective date: 20170913

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN WITHDRAWN

18W Application withdrawn

Effective date: 20171228