HK1204506A1 - 半導體裝置以及半導體裝置的製造方法 - Google Patents

半導體裝置以及半導體裝置的製造方法

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Publication number
HK1204506A1
HK1204506A1 HK15102537.9A HK15102537A HK1204506A1 HK 1204506 A1 HK1204506 A1 HK 1204506A1 HK 15102537 A HK15102537 A HK 15102537A HK 1204506 A1 HK1204506 A1 HK 1204506A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor device
manufacturing
semiconductor
Prior art date
Application number
HK15102537.9A
Other languages
English (en)
Inventor
清水曉人
岡田史朗
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Publication of HK1204506A1 publication Critical patent/HK1204506A1/zh

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    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
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    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
HK15102537.9A 2013-05-29 2015-03-12 半導體裝置以及半導體裝置的製造方法 HK1204506A1 (zh)

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CN107431060B (zh) * 2015-06-24 2021-01-05 瑞萨电子株式会社 半导体器件的制造方法
JP2017147272A (ja) * 2016-02-15 2017-08-24 ローム株式会社 半導体装置およびその製造方法、ならびに、半導体装置の製造に使用されるリードフレーム中間体
JP2017168703A (ja) * 2016-03-17 2017-09-21 東芝メモリ株式会社 半導体装置の製造方法および半導体装置
JP2018107296A (ja) * 2016-12-27 2018-07-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP6788509B2 (ja) * 2017-01-17 2020-11-25 株式会社三井ハイテック リードフレームの製造方法およびリードフレーム
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JP6922674B2 (ja) * 2017-11-09 2021-08-18 トヨタ自動車株式会社 半導体装置
US10777489B2 (en) * 2018-05-29 2020-09-15 Katoh Electric Co., Ltd. Semiconductor module
JP7057727B2 (ja) * 2018-07-12 2022-04-20 株式会社三井ハイテック リードフレームおよび半導体装置
JP7134137B2 (ja) * 2019-05-31 2022-09-09 三菱電機株式会社 半導体装置
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JPH0529529A (ja) * 1991-07-24 1993-02-05 Matsushita Electron Corp 樹脂封止型半導体装置
JP2971449B2 (ja) * 1997-07-31 1999-11-08 松下電子工業株式会社 半導体装置、その製造方法及び半導体装置のリードフレーム
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CN203932042U (zh) 2014-11-05
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