SG11201600043RA - Method for bonding of contact surfaces - Google Patents
Method for bonding of contact surfacesInfo
- Publication number
- SG11201600043RA SG11201600043RA SG11201600043RA SG11201600043RA SG11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA SG 11201600043R A SG11201600043R A SG 11201600043RA
- Authority
- SG
- Singapore
- Prior art keywords
- bonding
- contact surfaces
- contact
- Prior art date
Links
Classifications
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83011—Chemical cleaning, e.g. etching, flux
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83012—Mechanical cleaning, e.g. abrasion using hydro blasting, brushes, ultrasonic cleaning, dry ice blasting, gas-flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83013—Plasma cleaning
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/83026—Applying a precursor material to the bonding area
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- H—ELECTRICITY
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
- H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/83801—Soldering or alloying
- H01L2224/8382—Diffusion bonding
- H01L2224/8383—Solid-solid interdiffusion
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- H—ELECTRICITY
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- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
- H01L2224/83907—Intermediate bonding, i.e. intermediate bonding step for temporarily bonding the semiconductor or solid-state body, followed by at least a further bonding step
-
- H—ELECTRICITY
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Wire Bonding (AREA)
- Micromachines (AREA)
- Manufacture Of Switches (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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PCT/EP2013/064239 WO2015000527A1 (en) | 2013-07-05 | 2013-07-05 | Method for bonding metallic contact areas with dissolution of a sacrificial layer applied on one of the contact areas in at least one of the contact areas |
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SG11201600043RA true SG11201600043RA (en) | 2016-02-26 |
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JP (1) | JP6282342B2 (en) |
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CN (2) | CN110310896B (en) |
SG (1) | SG11201600043RA (en) |
TW (4) | TWI826971B (en) |
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KR102306977B1 (en) | 2014-06-24 | 2021-09-30 | 에베 그룹 에. 탈너 게엠베하 | Method and device for surface treatment of substrates |
EP3671820A1 (en) | 2014-12-23 | 2020-06-24 | EV Group E. Thallner GmbH | Method and device for prefixing substrates |
US20170330855A1 (en) * | 2016-05-13 | 2017-11-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and Method for Immersion Bonding |
US10269771B2 (en) * | 2016-08-31 | 2019-04-23 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and a method of manufacturing the same |
US10971365B2 (en) | 2017-02-21 | 2021-04-06 | Ev Group E. Thallner Gmbh | Method and device for bonding substrates |
CN108324201B (en) * | 2018-05-08 | 2023-11-17 | 杨勇 | Mop with a handle |
KR20210021626A (en) | 2019-08-19 | 2021-03-02 | 삼성전자주식회사 | Semiconductor devices |
US20230098465A1 (en) * | 2019-12-20 | 2023-03-30 | Ohio State Innovation Foundation | Method of forming an impact weld |
CN112897454B (en) * | 2021-01-20 | 2024-02-23 | 杭州士兰集成电路有限公司 | MEMS device and method of manufacturing the same |
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JPS6130059A (en) | 1984-07-20 | 1986-02-12 | Nec Corp | Manufacture of semiconductor device |
JP2671419B2 (en) * | 1988-08-09 | 1997-10-29 | 株式会社日本自動車部品総合研究所 | Method for manufacturing semiconductor device |
US5603779A (en) * | 1995-05-17 | 1997-02-18 | Harris Corporation | Bonded wafer and method of fabrication thereof |
JP3532788B2 (en) | 1999-04-13 | 2004-05-31 | 唯知 須賀 | Semiconductor device and manufacturing method thereof |
US7320928B2 (en) * | 2003-06-20 | 2008-01-22 | Intel Corporation | Method of forming a stacked device filler |
US20050003652A1 (en) | 2003-07-02 | 2005-01-06 | Shriram Ramanathan | Method and apparatus for low temperature copper to copper bonding |
FR2857953B1 (en) * | 2003-07-21 | 2006-01-13 | Commissariat Energie Atomique | STACKED STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME |
DE102004015017B4 (en) * | 2004-03-26 | 2006-11-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Generation of mechanical and electrical connections between the surfaces of two substrates |
US7261793B2 (en) * | 2004-08-13 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | System and method for low temperature plasma-enhanced bonding |
KR100560721B1 (en) * | 2004-08-23 | 2006-03-13 | 삼성전자주식회사 | method of fabricating ink jet head including metal chamber layer and ink jet head fabricated therby |
TWI395253B (en) * | 2004-12-28 | 2013-05-01 | Mitsumasa Koyanagi | Method of fabricating integrated circuit device using self-organization function and apparatus for fabricating same |
US7601271B2 (en) * | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
US7598153B2 (en) * | 2006-03-31 | 2009-10-06 | Silicon Genesis Corporation | Method and structure for fabricating bonded substrate structures using thermal processing to remove oxygen species |
DE102006031405B4 (en) | 2006-07-05 | 2019-10-17 | Infineon Technologies Ag | Semiconductor module with switching functions and method of making the same |
KR100748723B1 (en) * | 2006-07-10 | 2007-08-13 | 삼성전자주식회사 | Bonding method of substrates |
JP2008166529A (en) * | 2006-12-28 | 2008-07-17 | Spansion Llc | Semiconductor device manufacturing method |
CN102292835B (en) * | 2009-01-23 | 2015-03-25 | 日亚化学工业株式会社 | Semiconductor device and method for manufacturing same |
DE102009050426B3 (en) | 2009-10-22 | 2011-03-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for aligned application of silicon chips with switching structures on e.g. wafer substrate, involves fixing aligned components on substrate by electrostatic force by applying electrical holding voltage above metallization surfaces |
JP5732652B2 (en) * | 2009-11-04 | 2015-06-10 | ボンドテック株式会社 | Joining system and joining method |
EP2597671A3 (en) | 2010-03-31 | 2013-09-25 | EV Group E. Thallner GmbH | Method for permanently connecting two metal surfaces |
JPWO2011152423A1 (en) | 2010-05-31 | 2013-08-01 | 三洋電機株式会社 | Metal joining method |
FR2966283B1 (en) * | 2010-10-14 | 2012-11-30 | Soi Tec Silicon On Insulator Tech Sa | METHOD FOR PRODUCING A COLLAGE STRUCTURE |
TWI458072B (en) * | 2010-12-16 | 2014-10-21 | Soitec Silicon On Insulator | Methods for directly bonding together semiconductor structures, and bonded semiconductor structures formed using such methods |
EP3442006A3 (en) * | 2011-01-25 | 2019-02-20 | EV Group E. Thallner GmbH | Method for the permanent bonding of wafers |
WO2012133760A1 (en) | 2011-03-30 | 2012-10-04 | ボンドテック株式会社 | Electronic component mounting method, electronic component mounting system, and substrate |
EP2695181B1 (en) | 2011-04-08 | 2015-06-24 | Ev Group E. Thallner GmbH | Method for permanently bonding wafers |
JP5889411B2 (en) * | 2011-08-30 | 2016-03-22 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Permanent wafer bonding method with connecting layer using solid phase diffusion or phase transformation |
US8431436B1 (en) | 2011-11-03 | 2013-04-30 | International Business Machines Corporation | Three-dimensional (3D) integrated circuit with enhanced copper-to-copper bonding |
FR2983845A1 (en) | 2012-05-25 | 2013-06-14 | Commissariat Energie Atomique | Method for manufacturing mechanical connection between e.g. semiconductor substrates to form microstructure, involves inserting stud in zone, where materials form alloy metal having melting point higher than that of one of materials |
JP2013251405A (en) * | 2012-05-31 | 2013-12-12 | Tadatomo Suga | Bonding method of substrate having metal region |
AT525618B1 (en) | 2012-09-28 | 2023-07-15 | Ev Group E Thallner Gmbh | Process for coating and bonding substrates |
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KR20200071150A (en) | 2020-06-18 |
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EP2994935A1 (en) | 2016-03-16 |
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TWI775080B (en) | 2022-08-21 |
JP2016524335A (en) | 2016-08-12 |
US9640510B2 (en) | 2017-05-02 |
EP3301706A1 (en) | 2018-04-04 |
TWI826971B (en) | 2023-12-21 |
TW201921519A (en) | 2019-06-01 |
CN110310896A (en) | 2019-10-08 |
KR102158960B1 (en) | 2020-09-23 |
US20160071817A1 (en) | 2016-03-10 |
WO2015000527A1 (en) | 2015-01-08 |
TWI645476B (en) | 2018-12-21 |
KR102124233B1 (en) | 2020-06-18 |
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