WO2014196299A1 - シリコンウエハ研磨用組成物 - Google Patents
シリコンウエハ研磨用組成物 Download PDFInfo
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- WO2014196299A1 WO2014196299A1 PCT/JP2014/062176 JP2014062176W WO2014196299A1 WO 2014196299 A1 WO2014196299 A1 WO 2014196299A1 JP 2014062176 W JP2014062176 W JP 2014062176W WO 2014196299 A1 WO2014196299 A1 WO 2014196299A1
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- Prior art keywords
- group
- polishing
- silicon wafer
- amide group
- containing polymer
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Definitions
- the present invention relates to a polishing composition used for polishing a silicon wafer.
- This application claims priority based on Japanese Patent Application No. 2013-120328 filed on June 7, 2013 and Japanese Patent Application No. 2014-010836 filed on January 23, 2014. The entire contents of these applications are hereby incorporated by reference.
- the surface of a silicon wafer used as a component of a semiconductor device or the like is generally finished to a high-quality mirror surface through a lapping process (rough polishing process) and a polishing process (precision polishing process).
- the polishing process typically includes a preliminary polishing process (preliminary polishing process) and a final polishing process (final polishing process).
- a polishing method in the polishing step a chemical mechanical polishing method in which a water-soluble polymer typified by a cellulose derivative or the like is included in a polishing liquid is known. In this method, the water-soluble polymer is adsorbed to or desorbed from abrasive grains or a silicon wafer, thereby contributing to reduction of defects and haze on the polished surface.
- Patent Literature 1 is cited as a technical literature regarding a polishing composition for a silicon wafer.
- Patent Document 2 is a technical document related to an abrasive used for polishing silicon oxide.
- the cellulose derivative is a polymer derived from a natural product (cellulose), the controllability of chemical structure and purity is limited compared to a polymer obtained by artificially polymerizing a monomer (hereinafter also referred to as a synthetic polymer). is there.
- the range of the weight average molecular weight and molecular weight distribution (ratio of the weight average molecular weight (Mw) to the number average molecular weight (Mn)) of cellulose derivatives that are readily available on the market is limited.
- ratio of the weight average molecular weight (Mw) to the number average molecular weight (Mn)) of cellulose derivatives that are readily available on the market is limited.
- natural products are used as raw materials, it is difficult to highly reduce foreign matters that may cause surface defects and local disturbances in the polymer structure (such as micro agglomeration). The amount and degree are also likely to vary. With the trend toward finer design rules for semiconductor devices, the demand for surface quality after polishing (typically low defects, low haze, etc
- an object of the present invention is to provide a composition for polishing a silicon wafer excellent in the effect of reducing defects and haze on the polishing surface.
- a silicon wafer polishing composition used in the presence of abrasive grains includes a silicon wafer polishing accelerator, an amide group-containing polymer, and water.
- the amide group-containing polymer has a structural unit A in the main chain.
- the structural unit A includes a main chain constituting carbon atom constituting a main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group.
- the carbonyl carbon atom constituting the secondary amide group or the tertiary amide group is directly bonded to the main chain constituting carbon atom.
- the amide group-containing polymer having the above configuration effectively contributes to the reduction of defects and haze on the surface of a silicon wafer that is an object to be polished. Therefore, when polishing using the above-described silicon wafer polishing composition (hereinafter also simply referred to as “polishing composition”), defects and haze on the polished surface can be effectively reduced.
- the structural unit A is represented by the following general formula (1): (In the formula, R 1 is a hydrogen atom, a methyl group, a phenyl group, a benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group, or a cyano group. R 2 and R 3 are the same or different.
- R 4 is a hydrogen atom, a methyl group, a phenyl group, a benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group, or a cyano group.
- X is (CH 2 ) n (where n is 4 And a monomer represented by (CH 2 ) 2 O (CH 2 ) 2 or (CH 2 ) 2 S (CH 2 ) 2 ); and the following general formula (3 ): (Wherein R 5 is a hydrogen atom, a methyl group, a phenyl group, a benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group, or a cyano group.
- R 6 and R 7 are the same or different, and A hydrogen atom, an alkyl group having 1 to 8 carbon atoms, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, an alkylol group, an acetyl group, or an aromatic group having 6 to 60 carbon atoms, and these Among them, those other than a hydrogen atom include those having a substituent, and a is an integer of 1 to 5.) derived from at least one selected from the group consisting of: According to the polishing composition containing the amide group-containing polymer having the above structural unit, the effect of reducing defects and haze is better exhibited.
- the amide group-containing polymer is nonionic.
- the effect of reducing defects and haze is suitably exhibited.
- the abrasive grains are silica particles.
- the effect of reducing defects and haze due to the amide group-containing polymer is suitably exhibited.
- a composition for rinsing a silicon wafer including a silicon wafer polishing accelerator, an amide group-containing polymer, and water.
- the amide group-containing polymer has a structural unit A in the main chain.
- the structural unit A includes a main chain constituting carbon atom constituting a main chain of the amide group-containing polymer and a secondary amide group or a tertiary amide group.
- the carbonyl carbon atom constituting the secondary amide group or the tertiary amide group is directly bonded to the main chain constituting carbon atom.
- Such a rinsing composition is, for example, polished in the presence of abrasive grains (typically abrasive grains using a polishing composition containing the silicon wafer polishing accelerator, the amide group-containing polymer, and water). It is preferably used as a rinsing liquid used after polishing performed in the presence of. According to the rinse solution, defects and haze can be further reduced without inhibiting the action of the amide group-containing polymer adsorbed on the silicon wafer surface.
- abrasive grains typically abrasive grains using a polishing composition containing the silicon wafer polishing accelerator, the amide group-containing polymer, and water.
- the polishing composition disclosed herein is characterized by including an amide group-containing polymer having the structural unit A in the main chain.
- This amide group-containing polymer is typically a water-soluble polymer.
- the structural unit A includes a main chain constituting carbon atom and a secondary amide group or a tertiary amide group constituting the main chain of the amide group-containing polymer.
- the amide group-containing polymer disclosed herein may contain one type of structural unit A, or may contain two or more types of structural unit A.
- the main chain constituting carbon atom in the structural unit A includes an ⁇ -carbon atom defined in relation to a carbonyl carbon atom constituting a secondary amide group or a tertiary amide group.
- the building block A can also contain ⁇ -carbon atoms. These ⁇ , ⁇ -carbon atoms may correspond to the two carbon atoms constituting the ethylenically unsaturated bond in the polymerizable monomer described later.
- the hydrogen atom bonded to the main chain constituting carbon atom is a substituent such as a methyl group, a phenyl group, a benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group, or a cyano group. May be substituted.
- the carbonyl carbon atom constituting the secondary amide group or the tertiary amide group is directly bonded to the main chain constituting carbon atom ( ⁇ -carbon atom).
- the secondary amide group is represented by the formula: —CONHR a ; and the tertiary amide group is represented by the formula: —CONR a R b ;
- R a in the secondary amide group, R a and R b in the tertiary amide group are organic groups, and may be, for example, organic groups having 1 to 18 carbon atoms (C).
- this organic group may contain N in the form of amide, amine, nitrile and the like, and may contain oxygen atom (O) in the form of ester, ether, ketone, hydroxyl group and the like.
- a sulfur atom (S) may be included in the form of, for example, thioether.
- R a and R b in the tertiary amide group may be linked directly or via O or S.
- Preferable examples of R a in the secondary amide group, R a and R b in the tertiary amide group include R 2 and R 3 in the general formula (1) described later, and in the general formula (3) also described later. (CH 2 ) a —NR 6 R 7 may be mentioned.
- R a and R b in the tertiary amide group may be connected to each other to form —X— in the general formula (2) described later.
- R a and R b in the tertiary amide group may be the same or different.
- the structural unit A may be substantially free of a primary amide group.
- the structural unit A is preferably derived from the polymerizable monomer a. Therefore, the amide group-containing polymer disclosed herein is preferably a polymer obtained by polymerizing or copolymerizing a monomer component containing one or more polymerizable monomers a.
- the polymerizable monomer a typically has a polymerizable group having an ethylenically unsaturated bond.
- the ethylenically unsaturated bond refers to a carbon-carbon double bond capable of radical polymerization.
- the hydrogen atom bonded to the carbon atom constituting the ethylenically unsaturated bond may be substituted with the above-described substituent.
- the polymerizable group having an ethylenically unsaturated bond include an acryloyl group and an ⁇ -substituted product (for example, a methacryloyl group and an ⁇ -phenylacryloyl group) substituted with the above substituent.
- the polymerizable monomer a containing a (meth) acryloyl group as a polymeric group is preferable.
- the polymerizable monomer a is also an ⁇ , ⁇ -unsaturated carbonyl compound.
- the ⁇ , ⁇ -unsaturated carbonyl compound is preferably an ⁇ , ⁇ -unsaturated carboxylic acid amide.
- the carboxylic acid amide group in the ⁇ , ⁇ -unsaturated carboxylic acid amide is the secondary amide group or the tertiary amide group described above.
- the ⁇ , ⁇ -unsaturated carbonyl compound may be an ⁇ -substituted product having the above-described substituent.
- the structural unit A is preferably derived from at least one of the polymerizable monomers a (hereinafter also simply referred to as “monomer”) represented by the following general formulas (1) to (3).
- the amide group-containing polymer disclosed herein is a polymer obtained by polymerizing or copolymerizing a monomer component containing at least one monomer represented by the following general formulas (1) to (3). preferable.
- R 1 is a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, an alkylol group, an acetyl group, a phenyl group, A benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group or a cyano group; R 1 is preferably a group selected from a hydrogen atom, a methyl group, a phenyl group, a benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group and a cyano group, more preferably a hydrogen atom, a methyl group and a phenyl group.
- R 2 and R 3 are selected from a hydrogen atom, an alkyl group that may have a substituent, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, an alkylol group, an acetyl group, and an aromatic group It is a group.
- the total number of carbon atoms in the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group which may have the above substituent is 1 to 40 (preferably 1 to 24, more Preferably 1 to 14 and more preferably 1 to 10), and in the above alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group when the substituent is removed
- the number of carbon atoms is 1 to 18 (preferably 1 to 8, more preferably 1 to 4).
- the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group which may have a substituent may be a chain (linear or branched) or cyclic.
- the chain is preferable.
- the aromatic group is an aryl group that may have a substituent.
- the total number of carbon atoms in the aromatic group is 6 to 60 (preferably 6 to 36, more preferably 6 to 24, still more preferably 6 to 12).
- the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group, acetyl group and the substituent that the aromatic group may have are a hydroxyl group; a halogen atom such as a chlorine atom; a cyano group; Is included.
- the substituents that the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group may have include the above-described aromatic group.
- the substituent that the aromatic group may have further includes the above-described alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group, and acetyl group.
- R 2 and R 3 are preferably a hydrogen atom or an alkyl group having 1 to 18 carbon atoms (preferably 1 to 8, for example 1 to 4, typically 1, 2 or 3).
- the alkyl group may be linear or branched.
- R 2 and R 3 are also preferably an alkoxy group, an alkoxyalkyl group, an alkylol group, or an acetyl group.
- the alkoxy group is preferably an alkoxy group having 1 to 8 carbon atoms (eg 1 to 6, typically 1 to 4) (eg methoxy group).
- the alkoxyalkyl group is preferably an alkoxyalkyl group having 1 to 8 carbon atoms (eg 1 to 6, typically 1 to 4 carbon atoms) (eg methoxymethyl group, ethoxymethyl group, propoxymethyl group, butoxymethyl group). Group).
- the alkylol group is more preferably an alkylol group having 1 to 8 carbon atoms (for example, 1 to 6, typically 1, 2 or 3) (for example, a methylol group, an ethylol group, or a propylol group).
- R 2 and R 3 may be the same or different. However, the case where both R 2 and R 3 are hydrogen atoms is excluded.
- R 4 represents a hydrogen atom, a methyl group, a phenyl group, a benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group, or a cyano group. Of these, a hydrogen atom, a methyl group, and a phenyl group are preferable.
- X may be (CH 2 ) n . However, n is an integer of 4-6. X may also be (CH 2 ) 2 O (CH 2 ) 2 or (CH 2 ) 2 S (CH 2 ) 2 .
- At least one hydrogen atom constituting X is substituted with an alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group, acetyl group, or aromatic group in the general formula (1).
- it may be substituted with a hydroxyl group, a halogen atom, an amino group, a cyano group, or the like.
- R 5 represents a hydrogen atom, a methyl group, a phenyl group, a benzyl group, a chloro group, a difluoromethyl group, a trifluoromethyl group, or a cyano group.
- R 6 and R 7 are selected from a hydrogen atom, an alkyl group which may have a substituent, an alkenyl group, an alkynyl group, an aralkyl group, an alkoxy group, an alkoxyalkyl group, an alkylol group, an acetyl group and an aromatic group.
- the total number of carbon atoms in the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group which may have the above substituent is 1 to 40 (preferably 1 to 24, more Preferably 1 to 14 and more preferably 1 to 10), and in the above alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group when the substituent is removed
- the number of carbon atoms is 1 to 18 (preferably 1 to 8, more preferably 1 to 4).
- the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group which may have a substituent may be a chain (linear or branched) or cyclic.
- the chain is preferable.
- the aromatic group is an aryl group that may have a substituent.
- the total number of carbon atoms in the aromatic group is 6 to 60 (preferably 6 to 36, more preferably 6 to 24, still more preferably 6 to 12).
- the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group, acetyl group and the substituent that the aromatic group may have are a hydroxyl group; a halogen atom such as a chlorine atom; a cyano group; Is included.
- the substituents that the alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group and acetyl group may have include the above-described aromatic group.
- the substituent that the aromatic group may have further includes the above-described alkyl group, alkenyl group, alkynyl group, aralkyl group, alkoxy group, alkoxyalkyl group, alkylol group, and acetyl group.
- R 6 and R 7 are preferably a hydrogen atom or an alkyl group having 1 to 8 carbon atoms (for example, 1 to 4, typically 1, 2 or 3).
- the alkyl group may be linear or branched.
- R 6 and R 7 are also preferably an alkoxy group, an alkoxyalkyl group, an alkylol group, or an acetyl group.
- the alkoxy group is preferably an alkoxy group having 1 to 8 carbon atoms (eg 1 to 6, typically 1 to 4) (eg methoxy group).
- the alkoxyalkyl group is preferably an alkoxyalkyl group having 1 to 8 carbon atoms (eg 1 to 6, typically 1 to 4 carbon atoms) (eg methoxymethyl group, ethoxymethyl group, propoxymethyl group, butoxymethyl group).
- Group The alkylol group is preferably an alkylol group having 1 to 8 carbon atoms (for example, 1 to 6, typically 1, 2 or 3) (for example, a methylol group, an ethylol group, or a propylol group).
- R 6 and R 7 may be the same or different.
- Examples of the polymerizable monomer a disclosed herein include acrylamide N-mono-substituted, N, N-di-substituted, and ⁇ -substituted thereof (for example, N-mono-substituted methacrylamide, N , N-disubstituted compounds) and the like.
- Specific examples of the N-mono-substituted product include, for example, N-methylacrylamide, N-ethylacrylamide, N-propylacrylamide, N-isopropylacrylamide, N-butylacrylamide, N-isobutylacrylamide, and N-tert-butylacrylamide.
- N-monoalkylacrylamides such as N-heptylacrylamide, N-octylacrylamide, N-tert-octylacrylamide, N-dodecylacrylamide, N-octadecylacrylamide; N- (2-hydroxyethyl) acrylamide, N- (1, 1-dimethyl-2-hydroxyethyl) acrylamide, N- (1-ethyl-hydroxyethyl) acrylamide, N- (2-chloroethyl) acrylamide, N- (2,2,2-trichloro-1 Hydroxyethyl) acrylamide, N- (2-dimethylaminoethyl) acrylamide, N- (3-dimethylaminopropyl) acrylamide, N- [3-bis (2-hydroxyethyl) aminopropyl] acrylamide, N- (1,1 -Dimethyl-2-dimethylaminoethyl) acrylamide, N- (2-methyl-2-phen
- the N-mono-substituted product is also exemplified by N, N-dimethylaminoethylacrylamide, N, N-diethylaminoethylacrylamide, N, N-dimethylaminopropylacrylamide, N, N-diethylaminopropylacrylamide, N, N-dimethyl.
- Dialkylaminoalkyl (meth) acrylamides such as aminoethyl methacrylamide, N, N-diethylaminoethyl methacrylamide, N, N-dimethylaminopropyl methacrylamide, N, N-diethylaminopropyl methacrylamide and the like may be used.
- N, N-disubstituted product examples include N, N-dimethylacrylamide, N, N-diethylacrylamide, N, N-dipropylacrylamide, N, N-diisopropylacrylamide, N, N-dibutylacrylamide, N, N-diisobutylacrylamide, N, N-di-tert-butylacrylamide, N, N-diheptylacrylamide, N, N-dioctylacrylamide, N, N-di-tert-octylacrylamide, N, N-didodecyl N, N-dialkylacrylamides such as acrylamide and N, N-dioctadecylacrylamide; substituted N, N-dialkyl such as N, N-bis (2-hydroxyethyl) acrylamide and N, N-bis (2-cyanoethyl) acrylamide Acrylamide; N, N-diallyl N, N-diallyl
- the amide group-containing polymer is preferably nonionic.
- a polymer that substantially does not contain an anionic or cationic structural unit is preferable.
- substantially free of anionic or cationic structural units means that the molar ratio of these structural units is less than 0.02% (for example, less than 0.001%).
- the molecular weight of the amide group-containing polymer is not particularly limited.
- the Mw of an amide group-containing polymer is typically less than 40 ⁇ 10 4 , preferably less than 25 ⁇ 10 4 , more preferably less than 20 ⁇ 10 4 , even more preferably less than 10 ⁇ 10 4 , particularly preferably 5 ⁇ . 10 is less than 4.
- the Mw of the amide group-containing polymer is typically 5 ⁇ 10 3 or more, preferably 1 ⁇ 10 4 or more, more preferably 1.5 ⁇ 10 4 or more from the viewpoint of haze reduction or the like.
- the amide group-containing polymer has an amide group-containing polymer having a structural unit A derived from the monomer represented by the general formula (1) in the main chain (for example, R 2 and R 3 in the general formula (1) are , A polymer that is an alkyl group having 1 to 8 carbon atoms or an alkylol group having 1 to 8 carbon atoms (for example, 1 or 2), from the viewpoint of reducing defects and haze, the Mw is Preferably it is less than 5 ⁇ 10 4 (eg less than 4 ⁇ 10 4 , typically less than 3 ⁇ 10 4 ).
- the Mw is, for example, 40 It is less than ⁇ 10 4 , preferably less than 25 ⁇ 10 4 , more preferably less than 20 ⁇ 10 4 , and even more preferably less than 10 ⁇ 10 4 .
- the relationship between the weight average molecular weight (Mw) and the number average molecular weight (Mn) of the amide group-containing polymer is not particularly limited. From the viewpoint of preventing the occurrence of aggregates, for example, those having a molecular weight distribution (Mw / Mn) of 5.0 or less can be preferably used. From the viewpoint of performance stability of the polishing composition, the Mw / Mn of the amide group-containing polymer is preferably 4.0 or less, more preferably 3.5 or less, and even more preferably 3.0 or less (for example 2.5 The following). In principle, Mw / Mn is 1.0 or more. From the viewpoints of availability of raw materials and ease of synthesis, an amide group-containing polymer having Mw / Mn of 1.05 or more can be preferably used.
- Mw and Mn of the amide group-containing polymer values based on aqueous gel permeation chromatography (GPC) (aqueous, polyethylene oxide equivalent) can be adopted.
- the amide group-containing polymer disclosed here substantially consists of only the structural unit A.
- the ratio (molar ratio) of the number of moles of the structural unit A to the number of moles of all the structural units contained in the molecular structure of the polymer is 99 mole% or more (for example, 99.9 mole% or more). , Typically 99.9 to 100 mol%).
- Preferable examples of such a polymer include a homopolymer composed of only one type of polymerizable monomer a disclosed herein and a copolymer composed of two or more types of polymerizable monomer a.
- the amide group-containing polymer disclosed herein is a structural unit derived from one or more monomers b that are copolymerizable with the polymerizable monomer a within a range that does not significantly impair the effects of the invention. (Hereinafter also referred to as “structural unit B”).
- the structural unit B is defined as being different from the structural unit A. Building block B can also be free of secondary and tertiary amide groups.
- the proportion (molar ratio) of the structural unit B in the amide group-containing polymer can be less than 50 mol% (for example, less than 30 mol%, typically less than 10 mol%).
- the “mol%” is a molar ratio calculated by regarding one constituent unit derived from one monomer (including polymerizable monomer a and monomer b) as one molecule. is there. Therefore, the proportions of the structural units A and B described above can respectively correspond to the molar ratio of the polymerizable monomer a and the monomer b in the total monomer components used for the polymerization.
- the amide group-containing polymer disclosed herein preferably has an adsorption ratio of 10% to 80% in the following adsorption ratio measurement. Thereby, aggregation of the abrasive grains can be suppressed, and the function of the abrasive grains to mechanically polish the silicon wafer can be adjusted. Moreover, the reduction
- the adsorption ratio is preferably 10% to 70% (eg, 10 to 60%, typically 15 to 50%).
- the adsorption ratio measurement is performed as follows. More specifically, for example, the adsorption ratio of the amide group-containing polymer can be determined in the same manner as the adsorption ratio measurement described in the examples described later.
- Adsorption ratio measurement (1) A test liquid L0 containing 0.018% by mass of a polymer to be measured and 0.01% by mass of ammonia and the balance being water is prepared. (2) A test liquid L1 containing 0.46% by mass of abrasive grains, 0.018% by mass of the polymer to be measured and 0.01% by mass of ammonia, with the balance being water is prepared. (3) Centrifugation treatment is performed on the test liquid L1 to precipitate the abrasive grains.
- the above centrifugation treatment can be performed, for example, under the condition of centrifugation for 30 minutes at a rotational speed of 20000 rpm using a centrifuge manufactured by Beckman Coulter, model “Avanti HP-30I”. Further, the mass W0 of the measurement target polymer contained in the test liquid L0 and the mass W1 of the measurement target polymer contained in the supernatant liquid after the centrifugation treatment is performed on the test liquid L1 are the test liquid L1 and It can be determined by measuring the total organic carbon content (TOC) of the supernatant.
- the TOC can be measured using, for example, a total organic carbon meter (combustion catalytic oxidation method, model “TOC-5000A”) manufactured by Shimadzu Corporation or an equivalent thereof.
- the same abrasive grains as the abrasive grains of the polishing composition containing the measurement target polymer should be used. Is desirable. However, when measuring the adsorption ratio of the amide group-containing polymer contained in the rinsing composition described later, it is included in the polishing composition used in the polishing step prior to the rinsing step using the rinsing composition.
- the adsorption ratio is not significantly different (for example, any abrasive grains). Even if it is used, the adsorption ratio of the polymer to be measured is clearly larger than 10% or can be said to be clearly smaller), and the adsorption ratio measurement may be performed using abrasive grains different from the abrasive grains for the polishing composition. Good.
- the material is the same as the abrasive grains for the polishing composition, and the size or shape of the particles (for example, one of the average primary particle diameter, average secondary particle diameter, particle diameter distribution, aspect ratio, specific surface area, etc.) Abrasive grains having slightly different characteristic values) may be used.
- the same kind of material as the abrasive for polishing composition, and the specific surface area is substantially the same (for example, the difference in specific surface area with the abrasive constituting the polishing composition is within ⁇ 10%).
- the technique disclosed herein is a polishing composition that uses abrasive grains having a specific surface area of about 20 to 200 mm 2 / g (typically 50 to 150 mm 2 / g). It can be preferably applied to.
- the polishing composition disclosed herein typically contains water in addition to the amide group-containing polymer.
- water ion exchange water (deionized water), pure water, ultrapure water, distilled water and the like can be preferably used.
- the water to be used preferably has, for example, a total content of transition metal ions of 100 ppb or less in order to avoid as much as possible the action of other components contained in the polishing composition.
- the purity of water can be increased by operations such as removal of impurity ions with an ion exchange resin, removal of foreign matter with a filter, distillation, and the like.
- the polishing composition disclosed herein may further contain an organic solvent (lower alcohol, lower ketone, etc.) that can be uniformly mixed with water, if necessary.
- an organic solvent lower alcohol, lower ketone, etc.
- 90% by volume or more of the solvent contained in the polishing composition is preferably water, and more preferably 95% by volume or more (typically 99 to 100% by volume) is water.
- the polishing composition disclosed herein (typically a slurry-like composition) has, for example, a solid content (non-volatile content; NV) of 0.01% by mass to 50% by mass, and the balance Is preferably an aqueous solvent (water or a mixed solvent of water and the above-mentioned organic solvent) or a form in which the balance is an aqueous solvent and a volatile compound (for example, ammonia).
- NV non-volatile content
- the balance is preferably an aqueous solvent (water or a mixed solvent of water and the above-mentioned organic solvent) or a form in which the balance is an aqueous solvent and a volatile compound (for example, ammonia).
- NV non-volatile content
- the balance is preferably an aqueous solvent (water or a mixed solvent of water and the above-mentioned organic solvent) or a form in which the balance is an aqueous solvent and a volatile compound (for example, ammonia).
- the polishing composition disclosed herein is used in the presence of abrasive grains.
- the abrasive has a function of mechanically polishing the surface of the silicon wafer.
- the abrasive also has a function of rubbing the amide group-containing polymer adsorbed on the surface of the abrasive grain on a silicon wafer in the polishing composition disclosed herein or peeling off the amide group-containing polymer adsorbed on the silicon wafer. It has a function. Thereby, chemical polishing by the silicon wafer polishing accelerator is adjusted.
- “the polishing composition is used in the presence of abrasive grains” can include embodiments in which the polishing composition contains abrasive grains.
- the polishing composition is used in the presence of abrasive grains” can be rephrased as “the polishing composition contains abrasive grains”.
- the abrasive grains may be used, for example, in the form of fixed abrasive grains included in the polishing pad.
- the material and properties of the abrasive grains disclosed herein are not particularly limited, and can be appropriately selected according to the purpose of use and usage of the polishing composition.
- Examples of the abrasive grains include inorganic particles, organic particles, and organic-inorganic composite particles.
- the inorganic particles include silica particles, alumina particles, cerium oxide particles, chromium oxide particles, titanium dioxide particles, zirconium oxide particles, magnesium oxide particles, manganese dioxide particles, zinc oxide particles, oxide particles such as bengara particles; Examples thereof include nitride particles such as silicon nitride particles and boron nitride particles; carbide particles such as silicon carbide particles and boron carbide particles; diamond particles; carbonates such as calcium carbonate and barium carbonate.
- Specific examples of the organic particles include polymethyl methacrylate (PMMA) particles and poly (meth) acrylic acid particles (here, (meth) acrylic acid is a generic term for acrylic acid and methacrylic acid). And polyacrylonitrile particles.
- PMMA polymethyl methacrylate
- acrylic acid is a generic term for acrylic acid and methacrylic acid
- polyacrylonitrile particles Such an abrasive grain may be used individually by 1 type, and may be used in combination of 2 or more type.
- abrasive inorganic particles are preferable, and particles made of metal or metalloid oxide are particularly preferable.
- silica particles can be mentioned. The reason is that if silica particles consisting of the same elements and oxygen atoms as the object to be polished (silicon wafer) are used as abrasive grains, no metal or metalloid residue different from silicon is generated after polishing, and the silicon wafer surface This is because there is no possibility of contamination or deterioration of electrical characteristics as a silicon wafer due to diffusion of a metal or semimetal different from silicon into the object to be polished.
- a polishing composition containing only silica particles as an abrasive is exemplified as a preferred embodiment of the polishing composition from this viewpoint.
- Silica has a property that it can be easily obtained in high purity. This is also cited as the reason why silica particles are preferable as the abrasive grains.
- Specific examples of the silica particles include colloidal silica, fumed silica, precipitated silica and the like. Colloidal silica and fumed silica are preferable as silica particles from the viewpoint that scratches are hardly generated on the surface of the object to be polished and a surface having a lower haze can be realized. Of these, colloidal silica is preferable. Among these, colloidal silica can be preferably used as abrasive grains of a polishing composition used for polishing (particularly final polishing) of a silicon wafer.
- the true specific gravity of silica constituting the silica particles is preferably 1.5 or more, more preferably 1.6 or more, and even more preferably 1.7 or more.
- the polishing rate (amount for removing the surface of the object to be polished per unit time) can be improved when polishing a silicon wafer.
- silica particles having a true specific gravity of 2.2 or less are preferable.
- a measured value by a liquid substitution method using ethanol as a substitution liquid can be adopted.
- the abrasive grains contained in the polishing composition may be in the form of primary particles or in the form of secondary particles in which a plurality of primary particles are aggregated. Further, abrasive grains in the form of primary particles and abrasive grains in the form of secondary particles may be mixed. In a preferred embodiment, at least a part of the abrasive grains is contained in the polishing composition in the form of secondary particles.
- Average abrasive grain of the primary particle diameter D P1 is not particularly limited. From the viewpoint of polishing efficiency and the like, the average primary particle diameter DP1 is preferably 5 nm or more, and more preferably 10 nm or more. Higher polishing effect (e.g., reduced haze, effects such as removal of defects) from the viewpoint of obtaining an average primary particle diameter D P1 is preferably at least 15 nm, more 20nm (e.g. 20nm greater) are more preferred. Further, in view of smoother highly surface easily obtained, an average primary particle diameter D P1 of the abrasive grains is preferably 100nm or less, more preferably 50nm or less, more preferably 40nm or less.
- the technique disclosed herein is based on the average primary particle diameter from the viewpoint of easily obtaining a higher quality surface (for example, a surface with reduced defects such as LPD (Light Point Defect) and PID (Polishing Induced Defect)).
- An embodiment using abrasive grains having a DP 1 of 35 nm or less (more preferably 32 nm or less, for example, less than 30 nm) can be preferably implemented.
- the measurement of the specific surface area of the abrasive grains can be performed using, for example, a surface area measuring device manufactured by Micromeritex Co., Ltd., trade name “Flow Sorb II 2300”.
- Average abrasive grain of the secondary particle diameter D P2 is not particularly limited. From the viewpoint of polishing rate and the like, the average secondary particle diameter DP2 is preferably 10 nm or more, and more preferably 20 nm or more. From the viewpoint of obtaining a higher polishing effect, average secondary particle diameter D P2 is preferably at 30nm or more, more preferably 35nm or more, further preferably more than 40nm (e.g. 40nm greater). From the viewpoint of obtaining a higher smoothness surface, average secondary particle diameter D P2 of the abrasive grains is appropriately 200nm or less, preferably 150nm or less, more preferably 100nm or less.
- the average secondary particle diameter DP2 is less than 70 nm (more preferably, from the viewpoint of easily obtaining a higher quality surface (for example, a surface in which defects such as LPD and PID are reduced).
- An embodiment using abrasive grains of 60 nm or less (for example, less than 50 nm) can also be preferably implemented.
- the average secondary particle diameter D P2 of the abrasive grains, the abrasive grains in the aqueous dispersion of interest as a measurement sample for example, measured by dynamic light scattering method using a Nikkiso Co. Model "UPA-UT151" be able to.
- the average secondary particle diameter D P2 of the abrasive grains is generally equal to or greater than the average primary particle diameter D P1 of the abrasive grains (D P2 / D P1 ⁇ 1) and is typically larger than D P1 (D P2 / D P1 > 1).
- the D P2 / D P1 of the abrasive grains is usually in the range of 1.2 to 3. A range of 5 to 2.5 is preferable, and a range of 1.7 to 2.3 (for example, more than 1.9 and 2.2 or less) is more preferable.
- the shape (outer shape) of the abrasive grains may be spherical or non-spherical.
- specific examples of non-spherical abrasive grains include a peanut shape (that is, a peanut shell shape), a bowl shape, a confetti shape, and a rugby ball shape.
- abrasive grains in which most of the abrasive grains have a peanut shape can be preferably employed.
- the average value (average aspect ratio) of the major axis / minor axis ratio of the primary particles of the abrasive grains is preferably 1.05 or more, more preferably 1.1 or more. Higher polishing rates can be achieved by increasing the average aspect ratio of the abrasive grains.
- the average aspect ratio of the abrasive grains is preferably 3.0 or less, more preferably 2.0 or less, and still more preferably 1.5 or less, from the viewpoint of reducing scratches.
- the shape (outer shape) and average aspect ratio of the abrasive grains can be grasped by, for example, observation with an electron microscope.
- a predetermined number for example, 200
- SEM scanning electron microscope
- the value obtained by dividing the length of the long side (major axis value) by the length of the short side (minor axis value) is the major axis / minor axis ratio (aspect ratio).
- An average aspect ratio can be obtained by arithmetically averaging the aspect ratios of the predetermined number of particles.
- the polishing composition disclosed herein typically contains a silicon wafer polishing accelerator in addition to the amide group-containing polymer and water.
- the silicon wafer polishing accelerator is a component that functions to chemically polish the surface to be polished by being added to the polishing composition and contributes to an improvement in the polishing rate.
- the silicon wafer polishing accelerator has a function of chemically etching silicon, and is typically a basic compound.
- the basic compound contained in the polishing composition increases the pH of the polishing composition and improves the dispersion state of the abrasive grains and the amide group-containing polymer. It can help to improve the mechanical polishing action.
- an organic or inorganic basic compound containing nitrogen, an alkali metal or alkaline earth metal hydroxide, various carbonates or hydrogencarbonates, and the like can be used.
- alkali metal hydroxide, quaternary ammonium hydroxide or a salt thereof, ammonia, amine and the like can be mentioned.
- Specific examples of the alkali metal hydroxide include potassium hydroxide and sodium hydroxide.
- Specific examples of the carbonate or bicarbonate include ammonium bicarbonate, ammonium carbonate, potassium bicarbonate, potassium carbonate, sodium bicarbonate, sodium carbonate and the like.
- quaternary ammonium hydroxide or a salt thereof examples include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide and the like.
- amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- ( ⁇ -aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, anhydrous piperazine , Piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N-methylpiperazine, guanidine, azoles such as imidazole and triazole, and the like.
- Such basic compounds can be used singly or in combination of two or more.
- Preferred basic compounds from the viewpoint of improving the polishing rate include ammonia, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, ammonium hydrogen carbonate, ammonium carbonate, potassium hydrogen carbonate, potassium carbonate, hydrogen carbonate.
- Sodium and sodium carbonate are mentioned. Of these, preferred are ammonia, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide and tetraethylammonium hydroxide. More preferred are ammonia and tetramethylammonium hydroxide.
- a particularly preferred basic compound is ammonia.
- the polishing composition disclosed herein can be preferably implemented in an embodiment containing a surfactant (typically a water-soluble organic compound having a molecular weight of less than 1 ⁇ 10 4 ).
- a surfactant typically a water-soluble organic compound having a molecular weight of less than 1 ⁇ 10 4 .
- Surfactant can be used individually by 1 type or in combination of 2 or more types.
- an anionic or nonionic surfactant can be preferably used. From the viewpoint of low foaming property and ease of pH adjustment, a nonionic surfactant is more preferable.
- oxyalkylene polymers such as polyethylene glycol, polypropylene glycol, polytetramethylene glycol; polyoxyethylene alkyl ether, polyoxyethylene alkylphenyl ether, polyoxyethylene alkylamine, polyoxyethylene fatty acid ester, polyoxyethylene glyceryl ether fatty acid
- Nonionic surfactants such as esters, polyoxyalkylene adducts such as polyoxyethylene sorbitan fatty acid esters; copolymers of plural types of oxyalkylene (diblock type, triblock type, random type, alternating type); It is done.
- nonionic surfactants include block copolymers of ethylene oxide (EO) and propylene oxide (PO) (diblock bodies, PEO (polyethylene oxide) -PPO (polypropylene oxide) -PEO type triblock bodies).
- preferable surfactants include block copolymers of EO and PO (particularly, PEO-PPO-PEO type triblock), random copolymers of EO and PO, and polyoxyethylene alkyl ethers (for example, polyoxyethylene alkyl ethers). Oxyethylene decyl ether).
- the molecular weight of the surfactant is typically less than 1 ⁇ 10 4 .
- the molecular weight of the surfactant is preferably 9500 or less from the viewpoints of filterability of the polishing composition and cleanability of the polishing object.
- the molecular weight of the surfactant is typically 200 or more. From the viewpoint of haze reduction effect, the molecular weight of the surfactant is preferably 250 or more, and more preferably 300 or more (for example, 500 or more).
- the molecular weight of the surfactant may be a weight average molecular weight (Mw) determined by GPC (aqueous, polyethylene glycol equivalent) or a molecular weight calculated from a chemical formula.
- the more preferable range of the molecular weight of the surfactant may vary depending on the type of the surfactant.
- the Mw is preferably 1000 or more, more preferably 2000 or more, and even more preferably 5000 or more.
- the polishing composition disclosed herein contains, in addition to the amide group-containing polymer described above, a water-soluble polymer (hereinafter also referred to as “optional polymer”) different from the amide group-containing polymer, if necessary. obtain.
- a water-soluble polymer hereinafter also referred to as “optional polymer”
- the kind of the arbitrary polymer is not particularly limited, and can be appropriately selected from water-soluble polymers known in the field of polishing compositions.
- the arbitrary polymer may have at least one functional group selected from a cationic group, an anionic group and a nonionic group in the molecule.
- the arbitrary polymer has, for example, a hydroxyl group, carboxyl group, acyloxy group, sulfo group, primary amide structure, quaternary nitrogen structure, heterocyclic structure, vinyl structure, polyoxyalkylene structure, etc. in the molecule. obtain. From the viewpoints of reducing aggregates and improving detergency, a nonionic polymer can be preferably employed as the optional polymer.
- the optional polymer in the polishing composition disclosed herein include a polymer containing an oxyalkylene unit, a polymer containing a nitrogen atom, and polyvinyl alcohol.
- Examples of the polymer containing an oxyalkylene unit include PEO, a block copolymer of EO and PO, a random copolymer of EO and PO, and the like.
- the block copolymer of EO and PO may be a diblock body, a triblock body or the like including a PEO block and a PPO block.
- Examples of the triblock body include a PEO-PPO-PEO type triblock body and a PPO-PEO-PPO type triblock body. Usually, a PEO-PPO-PEO type triblock body is more preferable.
- the molar ratio (EO / PO) of EO and PO constituting the copolymer is determined from the viewpoint of solubility in water, detergency, and the like. It is preferably larger than 1, more preferably 2 or more, and further preferably 3 or more (for example, 5 or more).
- both a polymer containing a nitrogen atom in the main chain and a polymer having a nitrogen atom in a side chain functional group (pendant group) can be used.
- the polymer containing a nitrogen atom in the main chain include homopolymers and copolymers of N-acylalkylenimine type monomers.
- Specific examples of the N-acylalkyleneimine monomer include N-acetylethyleneimine, N-propionylethyleneimine and the like.
- Examples of the polymer having a nitrogen atom in the pendant group include a polymer containing an N-vinyl type monomer unit. For example, homopolymers and copolymers of N-vinylpyrrolidone can be employed.
- the saponification degree of the polyvinyl alcohol is not particularly limited.
- optional polymers that can be contained in the polishing composition disclosed herein include cellulose derivatives such as hydroxyethyl cellulose, hydroxypropyl cellulose, hydroxyethyl methyl cellulose, hydroxypropyl methyl cellulose, methyl cellulose, ethyl cellulose, ethyl hydroxyethyl cellulose, and carboxymethyl cellulose. And pullulan.
- the molecular weight and molecular weight distribution (Mw / Mn) of the arbitrary polymer are not particularly limited.
- the preferable Mw and molecular weight distribution in the amide group-containing polymer described above can be applied to the preferable Mw and molecular weight distribution in any polymer.
- the amount of the optional polymer used is 50% by mass of the total amount of the water-soluble polymer component (including the above-mentioned amide group-containing polymer and optional polymer used as required) of Mw 1 ⁇ 10 4 or more contained in the polishing composition. It is appropriate to make it below, and it is preferable to set it as 30 mass% or less, and it is more preferable to set it as 15 mass% or less (for example, 10 mass% or less).
- the polishing composition disclosed herein contains substantially no arbitrary polymer (for example, the proportion of the arbitrary polymer in the total amount of the water-soluble polymer component is less than 1% by mass, or the arbitrary polymer is not detected. ) Embodiment.
- the polishing composition disclosed herein contains a cellulose derivative as an optional polymer
- the amount used is 10% by mass of the total amount of water-soluble polymer components having an Mw of 1 ⁇ 10 4 or more contained in the polishing composition. It is preferable to suppress to below, and it is further more preferable to set it as 5 mass% or less (typically 1 mass% or less). As a result, it is possible to more highly suppress the occurrence of foreign matters and aggregation caused by the use of cellulose derivatives derived from natural products.
- the polishing composition disclosed herein contains, for example, substantially no cellulose derivative (for example, the proportion of the cellulose derivative in the total amount of the water-soluble polymer component is less than 1% by mass, or the cellulose derivative contains (Not detected).
- the polishing composition disclosed herein is a polishing agent such as a chelating agent, an organic acid, an organic acid salt, an inorganic acid, an inorganic acid salt, an antiseptic, and an antifungal agent, as long as the effects of the present invention are not significantly hindered.
- a known additive that can be used in a composition for polishing may be further contained as necessary.
- Examples of chelating agents include aminocarboxylic acid chelating agents and organic phosphonic acid chelating agents.
- aminocarboxylic acid chelating agents include ethylenediaminetetraacetic acid, ethylenediaminetetraacetic acid sodium, nitrilotriacetic acid, nitrilotriacetic acid sodium, nitrilotriacetic acid ammonium, hydroxyethylethylenediaminetriacetic acid, hydroxyethylethylenediamine sodium triacetate, diethylenetriaminepentaacetic acid Diethylenetriamine sodium pentaacetate, triethylenetetramine hexaacetic acid and sodium triethylenetetramine hexaacetate.
- organic phosphonic acid chelating agents include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), diethylenetriaminepenta (methylenephosphonic) Acid), ethane-1,1-diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane-1-hydroxy-1,1,2-triphosphonic acid Ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane-2,3,4-tricarboxylic acid and ⁇ -methylphospho Nosuccinic acid is included.
- organic phosphonic acid-based chelating agents are more preferable, and ethylenediaminetetrakis (methylenephosphonic acid) and diethylenetriaminepenta (methylenephosphonic acid) are particularly preferable.
- a particularly preferred chelating agent is ethylenediaminetetrakis (methylenephosphonic acid).
- organic acids include fatty acids such as formic acid, acetic acid and propionic acid, aromatic carboxylic acids such as benzoic acid and phthalic acid, citric acid, oxalic acid, tartaric acid, malic acid, maleic acid, fumaric acid, succinic acid, organic Examples include sulfonic acid and organic phosphonic acid.
- organic acid salts include alkali metal salts (sodium salts, potassium salts, etc.) and ammonium salts of organic acids.
- inorganic acids include sulfuric acid, nitric acid, hydrochloric acid, carbonic acid and the like.
- inorganic acid salts include alkali metal salts (sodium salts, potassium salts, etc.) and ammonium salts of inorganic acids.
- An organic acid and its salt, and an inorganic acid and its salt can be used individually by 1 type or in combination of 2 or more types.
- antiseptics and fungicides include isothiazoline compounds, paraoxybenzoates, phenoxyethanol and the like.
- the polishing composition disclosed herein can be used for polishing a polishing object (silicon wafer) made of single crystal silicon.
- the shape of the object to be polished is not particularly limited.
- the polishing composition disclosed herein can be preferably applied to polishing a polishing object having a flat surface such as a plate shape or a polyhedron shape.
- the polishing composition disclosed herein can be preferably used for final polishing of an object to be polished. Therefore, according to this specification, a method for producing a polished article (for example, a method for producing a silicon wafer) including a final polishing step using the polishing composition is provided.
- final polishing refers to the final polishing step in the manufacturing process of the object (that is, a step in which no further polishing is performed after that step).
- the polishing composition disclosed herein also refers to a polishing step upstream of final polishing (a preliminary polishing step between a rough polishing step and a final polishing step.
- the polishing composition includes at least a primary polishing step. Further, a polishing step such as secondary, tertiary, etc. may be included.
- the polishing composition disclosed herein may be used, for example, in a polishing step performed immediately before final polishing.
- the polishing composition disclosed herein can be particularly preferably used for polishing silicon wafers.
- it is suitable as a polishing composition used for final polishing of a silicon wafer or a polishing process upstream thereof.
- application to polishing (typically final polishing or polishing immediately before) of a silicon wafer prepared to have a surface roughness of 0.01 nm to 100 nm by an upstream process is effective.
- Application to final polishing is particularly preferable.
- the polishing composition disclosed herein is typically supplied to a polishing object in the form of a polishing liquid containing the polishing composition, and used for polishing the polishing object.
- the polishing liquid may be prepared, for example, by diluting (typically diluting with water) any of the polishing compositions disclosed herein. Or you may use this polishing composition as polishing liquid as it is. That is, the concept of the polishing composition in the technology disclosed herein is used as a polishing liquid diluted with a polishing liquid (working slurry) that is supplied to a polishing object and used for polishing the polishing object. Both concentrated liquid (polishing liquid stock solution) are included.
- Another example of the polishing liquid containing the polishing composition disclosed herein is a polishing liquid obtained by adjusting the pH of the composition.
- the content of the amide group-containing polymer in the polishing liquid is not particularly limited, and can be, for example, 1 ⁇ 10 ⁇ 4 mass% or more. From the viewpoint of haze reduction or the like, the preferable content is 5 ⁇ 10 ⁇ 4 mass% or more, more preferably 1 ⁇ 10 ⁇ 3 mass% or more, for example, 2 ⁇ 10 ⁇ 3 mass% or more. Further, from the viewpoint of polishing rate and the like, the content is preferably 0.2% by mass or less, and more preferably 0.1% by mass or less (for example, 0.05% by mass or less).
- the content of abrasive grains in the polishing liquid is not particularly limited, but is typically 0.01% by mass or more and 0.05% by mass or more. It is preferable that it is 0.1% by mass or more, for example, 0.15% by mass or more. By increasing the abrasive content, higher polishing rates can be achieved. From the viewpoint of realizing a surface having a lower haze, usually, the content is suitably 10% by mass or less, preferably 7% by mass or less, more preferably 5% by mass or less, still more preferably 2% by mass or less, For example, it is 1 mass% or less.
- the content of the silicon wafer polishing accelerator in the polishing liquid disclosed herein is not particularly limited. From the viewpoint of improving the polishing rate, the content is usually preferably 0.001% by mass or more, more preferably 0.003% by mass or more of the polishing liquid. Further, from the viewpoint of haze reduction or the like, the content is preferably less than 0.4% by mass, and more preferably less than 0.25% by mass.
- the lower limit of the pH of the polishing liquid is preferably 8.0 or more, more preferably 9.0 or more, and most preferably 9.5 or more.
- the pH of the polishing liquid is 8.0 or higher (more preferably 9.0 or higher, most preferably 9.5 or higher)
- the polishing rate of the silicon wafer is improved, and a silicon wafer with high surface accuracy is obtained efficiently. Can do. Further, the dispersion stability of the particles in the polishing liquid is improved.
- the upper limit of the pH of the polishing liquid is not particularly limited, but is preferably 12.0 or less, and more preferably 11.0 or less.
- the abrasive grains (especially silica particles such as colloidal silica, fumed silica, and precipitated silica) contained in the polishing liquid are made of a basic compound. It is possible to prevent dissolution and to suppress a reduction in mechanical polishing action by the abrasive grains.
- the pH can be adjusted, for example, with an organic acid or an inorganic acid among the basic compound and the other components.
- the pH can be preferably applied to a polishing liquid used for polishing a silicon wafer (for example, a polishing liquid for final polishing).
- the pH of the polishing liquid was measured using a pH meter (for example, a glass electrode type hydrogen ion concentration indicator (model number F-23) manufactured by Horiba, Ltd.) and a standard buffer solution (phthalate pH buffer solution: pH 4.01 ( 25 ° C), neutral phosphate pH buffer solution pH: 6.86 (25 ° C), carbonate pH buffer solution pH: 10.01 (25 ° C)), and then the glass electrode Is obtained by measuring the value after 2 minutes have elapsed and stabilized.
- a pH meter for example, a glass electrode type hydrogen ion concentration indicator (model number F-23) manufactured by Horiba, Ltd.
- a standard buffer solution phthalate pH buffer solution: pH 4.01 ( 25 ° C), neutral phosphate pH buffer solution pH: 6.86 (25 ° C), carbonate pH buffer solution pH: 10.01 (25 ° C)
- the content of the surfactant in the polishing liquid is not particularly limited, and can be, for example, 1 ⁇ 10 ⁇ 4 mass% or more.
- the preferable content is 5 ⁇ 10 ⁇ 4 mass% or more, more preferably 1 ⁇ 10 ⁇ 3 mass% or more, for example, 2 ⁇ 10 ⁇ 3 mass% or more.
- the content is preferably 0.2% by mass or less, and more preferably 0.1% by mass or less (for example, 0.05% by mass or less).
- the mass ratio (w1 / w2) between the content w1 of the amide group-containing polymer and the content w2 of the surfactant is not particularly limited, For example, it can be in the range of 0.01 to 100, preferably in the range of 0.05 to 50, and more preferably in the range of 0.1 to 30.
- the surfactant content relative to 100 parts by mass of the abrasive grains is suitably 20 parts by mass or less, for example. Yes, 15 parts by mass or less is preferable, and 10 parts by mass or less (for example, 6 parts by mass or less) is more preferable.
- the surfactant content relative to 100 parts by mass of the abrasive is suitably 0.001 parts by mass or more, preferably 0.005 parts by mass or more, 0.01 More than mass part (for example, 0.1 mass part or more) is more preferable.
- the polishing composition disclosed herein can also be preferably implemented in an embodiment that does not substantially contain a surfactant.
- the polishing composition disclosed herein may be in a concentrated form (that is, in the form of a polishing liquid concentrate) before being supplied to the object to be polished.
- the polishing composition in such a concentrated form is advantageous from the viewpoints of convenience, cost reduction, etc. during production, distribution, storage and the like.
- the concentration rate can be, for example, about 2 to 100 times in terms of volume, and usually about 5 to 50 times is appropriate.
- the concentration ratio of the polishing composition according to a preferred embodiment is 10 to 40 times, for example, 15 to 25 times.
- the polishing composition in the form of a concentrated liquid can be used in such a manner that a polishing liquid is prepared by diluting at a desired timing and the polishing liquid is supplied to an object to be polished.
- the dilution can be typically performed by adding and mixing the above-mentioned aqueous solvent to the concentrated solution.
- the aqueous solvent is a mixed solvent, only a part of the components of the aqueous solvent may be added for dilution, and a mixture containing these components in a different ratio from the aqueous solvent.
- a solvent may be added for dilution.
- a part of them may be diluted and then mixed with another agent to prepare a polishing liquid, or a plurality of agents may be mixed. Later, the mixture may be diluted to prepare a polishing liquid.
- the NV of the concentrated liquid can be set to 50% by mass or less, for example.
- the NV of the concentrated liquid is usually suitably 40% by mass or less, and 30% by mass or less. More preferably, it is 20 mass% or less, for example, 15 mass% or less.
- the NV of the concentrate is suitably 0.5% by mass or more, preferably 1% by mass or more, more preferably Is 3% by mass or more, for example, 5% by mass or more.
- the content of the amide group-containing polymer in the concentrated liquid can be, for example, 3% by mass or less.
- the content is preferably 1% by mass or less, more preferably 0.5% by mass or less, from the viewpoints of filterability and detergency of the polishing composition.
- the content, manufacturing, distribution, in terms of convenience and cost reduction, etc. at the time of such storage typically is suitably to be at 1 ⁇ 10 -3 wt% or more, preferably 5 ⁇ 10 - It is 3 % by mass or more, more preferably 1 ⁇ 10 ⁇ 2 % by mass or more.
- the content of abrasive grains in the concentrated liquid can be, for example, 50% by mass or less.
- the content is preferably 45% by mass or less, more preferably 40% by mass or less, from the viewpoints of stability of the polishing composition (for example, dispersion stability of abrasive grains) and filterability.
- the abrasive content may be 30% by mass or less, or 20% by mass or less (for example, 15% by mass or less).
- the content of the abrasive grains can be, for example, 0.5% by mass or more, preferably 1% by mass or more, and more preferably. Is 3% by mass or more (for example, 5% by mass or more).
- the polishing composition disclosed herein may be a one-part type or a multi-part type including a two-part type.
- a liquid A for example, a dispersion liquid containing abrasive grains (for example, silica particles), a silicon wafer polishing accelerator, and water) containing some of the constituent components of the polishing composition, and the remaining components
- the B liquid for example, an amide group-containing polymer-containing liquid
- an abrasive prepared separately may be used at a predetermined timing with respect to a polishing composition containing a silicon wafer polishing accelerator, an amide group-containing polymer, and water.
- each component contained in the polishing composition may be mixed using a well-known mixing device such as a blade-type stirrer, an ultrasonic disperser, or a homomixer.
- a well-known mixing device such as a blade-type stirrer, an ultrasonic disperser, or a homomixer.
- the aspect which mixes these components is not specifically limited, For example, all the components may be mixed at once and may be mixed in the order set suitably.
- the polishing composition disclosed herein can be used for polishing a polishing object, for example, in an embodiment including the following operations.
- a polishing liquid typically a slurry-like polishing liquid, sometimes referred to as a polishing slurry
- Preparing the polishing liquid may include preparing the polishing liquid by adding operations such as concentration adjustment (for example, dilution) and pH adjustment to the polishing composition. Or you may use the said polishing composition as polishing liquid as it is.
- concentration adjustment for example, dilution
- pH adjustment for example, dilution
- mixing those agents, diluting one or more agents before the mixing, and after the mixing Diluting the mixture, etc. can be included.
- the polishing liquid is supplied to the object to be polished and polished by a conventional method.
- the silicon wafer that has undergone the lapping process and the preliminary polishing process is set in a general polishing apparatus, and the surface of the silicon wafer (surface to be polished) is passed through the polishing pad of the polishing apparatus.
- a polishing liquid is supplied.
- the polishing pad is pressed against the surface of the silicon wafer to relatively move (for example, rotate) the two.
- the polishing of the object to be polished is completed through this polishing step.
- polishing process is not specifically limited. For example, any of non-woven fabric type, suede type, those containing abrasive grains, those not containing abrasive grains, etc. may be used.
- the polishing composition disclosed here which is polished using the polishing composition containing abrasive grains, contains a rinsing liquid containing the same components as the polishing composition except that the polishing composition does not contain abrasive grains. Can be used to rinse.
- the technique disclosed herein may include a step (rinsing step) of rinsing the polished article using a rinsing liquid containing the same components as the polishing composition except that the abrasive grains are not included. .
- residues such as abrasive grains that cause defects or haze on the surface of the polished article can be reduced.
- the rinsing process may be performed between the polishing process and the polishing process, and may be performed after the final polishing process and before the cleaning process described later. Except for not containing abrasive grains, rinsing with a rinsing liquid containing the same components as the polishing composition does not hinder the action of the amide group-containing polymer adsorbed on the silicon wafer surface, and further improves defects and haze. Can be reduced.
- a rinsing liquid is typically a silicon wafer polishing composition containing a silicon wafer polishing accelerator, an amide group-containing polymer, and water (specifically, a composition used for rinsing silicon wafer polishing. A rinsing composition).
- the composition of the rinsing composition for the silicon wafer is basically the same as the above-described composition for polishing a silicon wafer except that the abrasive grains are not included, and therefore the description thereof will not be repeated here.
- the polishing object polished using the polishing composition disclosed herein is typically washed after polishing (after rinsing if necessary). This washing can be performed using an appropriate washing solution.
- the cleaning liquid to be used is not particularly limited.
- an SC-1 cleaning liquid ammonium hydroxide (NH 4 OH), hydrogen peroxide (H 2 O 2 ), water (H 2 O), and the like that are common in the field of semiconductors and the like.
- SC-1 cleaning cleaning with the SC-1 cleaning solution
- SC-2 cleaning solution mixed solution of HCl, H 2 O 2 and H 2 O
- the temperature of the cleaning liquid can be, for example, about room temperature to 90 ° C. From the viewpoint of improving the cleaning effect, a cleaning solution of about 50 to 85 ° C. can be preferably used.
- PACMO Polyacryloylmorpholine
- PNIPAM Poly-N-isopropylacrylamide
- PVA Polyvinyl alcohol
- PVP Polyvinylpyrrolidone
- the above-mentioned water-soluble polymer (measurement target polymer), ammonia water (concentration 29%) and deionized water to be measured are mixed, and the measurement target polymer is 0.018% and ammonia (NH 3 ).
- a test solution L0 containing 0.01% concentration and the balance being water was prepared.
- the total organic carbon amount (TOC) was measured using a total organic carbon meter (combustion catalytic oxidation method, model “TOC-5000A”) manufactured by Shimadzu Corporation.
- the same abrasive grains, measurement target polymer, ammonia water (concentration 29%) and deionized water used in Examples and Comparative Examples described later are mixed, and the above-mentioned abrasive grains are 0.46%, measurement target polymer.
- the test solution L1 was centrifuged for 30 minutes at a rotational speed of 20000 rpm using a centrifuge manufactured by Beckman Coulter, model “Avanti HP-30I”. The supernatant liquid after the centrifugation treatment was collected, and the TOC of the supernatant liquid was measured using the total organic carbon meter.
- the adsorption ratio of the polymer to be measured was calculated from the TOC value of the test solution L0 and the TOC value of the supernatant of the test solution L1. The results are shown in Table 1.
- Example 1 ⁇ Preparation of polishing composition> (Example 1)
- This concentrated solution was diluted 20 times with deionized water to prepare a polishing composition according to Example 1.
- As the abrasive grains colloidal silica having an average primary particle diameter of 35 nm and an average secondary particle diameter of 66 nm was used.
- the average primary particle size is measured using a surface area measuring device manufactured by Micromerex, Inc., trade name “Flow Sorb II 2300”.
- the average secondary particle size is a volume average secondary particle size measured using a model “UPA-UT151” manufactured by Nikkiso Co., Ltd.
- PACMO was used as the water-soluble polymer.
- the amount of abrasive grains, water-soluble polymer and ammonia water used is such that the content of abrasive grains in the polishing composition is 0.46%, the content of water-soluble polymer is 0.018%, and ammonia (NH 3 ). The content of was made 0.01%.
- the polishing composition had a pH of 10.2.
- Example 2 A polishing composition according to Example 2 was prepared in the same manner as in Example 1 except that PNIPAM was used instead of PACMO.
- the polishing composition according to each example was directly used as a polishing liquid, and the surface of the silicon wafer was polished under the following conditions.
- a silicon wafer having a diameter of 300 mm, a conductivity type of P type, a crystal orientation of ⁇ 100>, and a resistivity of 0.1 ⁇ ⁇ cm to less than 100 ⁇ ⁇ cm is used as a polishing slurry (Fujimi Co., Ltd.).
- the surface roughness was adjusted to 0.1 nm to 10 nm by performing preliminary polishing using a product name “GLANZOX 2100” manufactured by Incorporated.
- Polishing machine Single wafer polishing machine manufactured by Okamoto Machine Tool Co., Ltd. Model “PNX-332B” Polishing table: Final polishing 1st stage and 2nd stage after preliminary polishing were carried out using 2 tables at the back stage among the 3 tables of the polishing machine. (The following conditions are the same for each table.) Polishing load: 15 kPa Plate rotation speed: 30 rpm Head rotation speed: 30rpm Polishing time: 2 minutes Polishing liquid temperature: 20 ° C Polishing liquid supply rate: 2.0 l / min
- an amide having a secondary amide group or a tertiary amide group and having the carbonyl carbon atom directly bonded to the carbon atom constituting the main chain of the polymer As shown in Table 1, as a water-soluble polymer, an amide having a secondary amide group or a tertiary amide group and having the carbonyl carbon atom directly bonded to the carbon atom constituting the main chain of the polymer
- the polishing compositions of Examples 1 and 2 using a group-containing polymer are Comparative Examples 1 to 2 using PVA, cationized PVA, and PVP as water-soluble polymers. Compared to 3, it was excellent in both effects of reducing the number of LPDs and reducing haze. From these results, it can be seen that defects and haze can be effectively reduced by polishing using the silicon wafer polishing composition containing the amide group-containing polymer.
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Abstract
Description
下記一般式(2):
下記一般式(3):
ここに開示される研磨用組成物は、構成単位Aを主鎖に有するアミド基含有ポリマーを含むことによって特徴づけられる。このアミド基含有ポリマーは、典型的には水溶性のポリマーである。上記構成単位Aは、該アミド基含有ポリマーの主鎖を構成する主鎖構成炭素原子と第二級アミド基または第三級アミド基とを含む。ここに開示されるアミド基含有ポリマーは、1種の構成単位Aを含むものであってもよく、2種以上の構成単位Aを含むものであってもよい。
上記アミド基含有ポリマーが、上記一般式(1)で表わされる単量体に由来する構成単位Aを主鎖に有するアミド基含有ポリマー(例えば、上記一般式(1)のR2,R3が、炭素原子数1~8のアルキル基、または炭素原子数1~8(例えば1または2)のアルキロール基であるポリマー)である場合には、欠陥やヘイズを低減する観点から、そのMwは、5×104未満(例えば4×104未満、典型的には3×104未満)であることが好ましい。上記アミド基含有ポリマーが、上記一般式(2)または(3)で表わされる単量体に由来する構成単位Aを主鎖に有するアミド基含有ポリマーである場合には、そのMwは、例えば40×104未満、好ましくは25×104未満、より好ましくは20×104未満、さらに好ましくは10×104未満である。
なお、原理上、Mw/Mnは1.0以上である。原料の入手容易性や合成容易性の観点から、通常は、Mw/Mnが1.05以上のアミド基含有ポリマーを好ましく使用し得る。
ここに開示されるアミド基含有ポリマーは、以下の吸着比測定における吸着比が10%~80%であることが好ましい。これによって、砥粒の凝集を抑制し、砥粒がシリコンウエハを機械的に研磨する働きを調整することができる。また、研磨中に発生する研磨屑と砥粒との凝集物の低減や、研磨後のシリコンウエハの表面の洗浄性向上が実現される。上記吸着比は10%~70%(例えば10~60%、典型的には15~50%)であることが好ましい。
[吸着比測定]
(1)測定対象ポリマー0.018質量%およびアンモニア0.01質量%を含み、残部が水からなる試験液L0を用意する。
(2)砥粒を0.46質量%、上記測定対象ポリマーを0.018質量%およびアンモニアを0.01質量%の濃度で含み、残部が水からなる試験液L1を用意する。
(3)上記試験液L1に対して遠心分離処理を行って上記砥粒を沈降させる。
(4)上記試験液L0に含まれる上記測定対象ポリマーの質量W0と、上記試験液L1に上記遠心分離処理を施した後の上澄み液に含まれる上記測定対象ポリマーの質量W1とから、以下の式により上記測定対象ポリマーの吸着比を算出する。
吸着比(%)=[(W0-W1)/W0]×100
なお、特に限定するものではないが、ここに開示される技術は、比表面積が凡そ20~200mm2/g(典型的には50~150mm2/g)の砥粒を使用する研磨用組成物に好ましく適用され得る。
ここに開示される研磨用組成物は、典型的には、上記アミド基含有ポリマーのほかに水を含む。水としては、イオン交換水(脱イオン水)、純水、超純水、蒸留水等を好ましく用いることができる。使用する水は、研磨用組成物に含有される他の成分の働きが阻害されることを極力回避するため、例えば遷移金属イオンの合計含有量が100ppb以下であることが好ましい。例えば、イオン交換樹脂による不純物イオンの除去、フィルタによる異物の除去、蒸留等の操作によって水の純度を高めることができる。
ここに開示される研磨用組成物は、必要に応じて、水と均一に混合し得る有機溶剤(低級アルコール、低級ケトン等)をさらに含有してもよい。通常は、研磨用組成物に含まれる溶媒の90体積%以上が水であることが好ましく、95体積%以上(典型的には99~100体積%)が水であることがより好ましい。
ここに開示される研磨用組成物は砥粒の存在下で用いられる。砥粒はシリコンウエハの表面を機械的に研磨する機能を有する。砥粒はまた、ここに開示される研磨用組成物中で、該砥粒表面に吸着した上記アミド基含有ポリマーをシリコンウエハにこすり付ける機能、あるいはシリコンウエハに吸着した上記アミド基含有ポリマーをはがす機能を有する。これによって、シリコンウエハ研磨促進剤による化学的研磨を調整する。なお、本明細書において「研磨用組成物は砥粒の存在下で用いられる」には、研磨用組成物に砥粒が含まれる態様が包含され得るものとする。かかる態様は、ここに開示される研磨用組成物の好適な一態様として把握される。したがって、「研磨用組成物は砥粒の存在下で用いられる」は「研磨用組成物は砥粒を含む」と換言することができる。あるいは、砥粒は、例えば研磨パッドに内包された固定砥粒の形態で用いられてもよい。
砥粒の平均二次粒子径DP2は、対象とする砥粒の水分散液を測定サンプルとして、例えば、日機装株式会社製の型式「UPA-UT151」を用いた動的光散乱法により測定することができる。
ここに開示される研磨用組成物は、典型的には、アミド基含有ポリマーおよび水の他に、シリコンウエハ研磨促進剤を含有する。シリコンウエハ研磨促進剤は、研磨用組成物に添加されることによって研磨対象となる面を化学的に研磨する働きをし、研磨速度の向上に寄与する成分である。シリコンウエハ研磨促進剤は、シリコンを化学的にエッチングする作用を有し、典型的には塩基性化合物である。研磨用組成物に含まれる塩基性化合物は、研磨用組成物のpHを増大させ、砥粒やアミド基含有ポリマーの分散状態を向上させるため、研磨用組成物の分散安定性の向上や砥粒による機械的な研磨作用の向上に役立ち得る。
ここに開示される研磨用組成物は、界面活性剤(典型的には、分子量1×104未満の水溶性有機化合物)を含む態様で好ましく実施され得る。界面活性剤の使用により、研磨用組成物の分散安定性が向上し得る。また、研磨面のヘイズを低減することが容易となり得る。界面活性剤は、1種を単独でまたは2種以上を組み合わせて用いることができる。
界面活性剤の分子量のより好ましい範囲は、界面活性剤の種類によっても異なり得る。例えば、界面活性剤としてEOとPOとのブロック共重合体を用いる場合には、Mwが1000以上のものが好ましく、2000以上のものがより好ましく、5000以上のものがさらに好ましい。
ここに開示される研磨用組成物は、上述したアミド基含有ポリマーに加えて、必要に応じて、上記アミド基含有ポリマーとは異なる水溶性ポリマー(以下「任意ポリマー」ともいう。)を含有し得る。かかる任意ポリマーの種類は特に制限されず、研磨用組成物の分野において公知の水溶性ポリマーのなかから適宜選択することができる。
上記任意ポリマーは、分子中に、カチオン性基、アニオン性基およびノニオン性基から選ばれる少なくとも1種の官能基を有するものであり得る。上記任意ポリマーは、例えば、分子中に水酸基、カルボキシル基、アシルオキシ基、スルホ基、第一級アミド構造、第四級窒素構造、複素環構造、ビニル構造、ポリオキシアルキレン構造等を有するものであり得る。凝集物の低減や洗浄性向上等の観点から、上記任意ポリマーとしてノニオン性のポリマーを好ましく採用し得る。
EOとPOとのブロック共重合体またはランダム共重合体において、該共重合体を構成するEOとPOとのモル比(EO/PO)は、水への溶解性や洗浄性等の観点から、1より大きいことが好ましく、2以上であることがより好ましく、3以上(例えば5以上)であることがさらに好ましい。
ここに開示される研磨用組成物は、本発明の効果が著しく妨げられない範囲で、キレート剤、有機酸、有機酸塩、無機酸、無機酸塩、防腐剤、防カビ剤等の、研磨用組成物(典型的には、シリコンウエハのファイナルポリシングに用いられる研磨用組成物)に用いられ得る公知の添加剤を、必要に応じてさらに含有してもよい。
防腐剤および防カビ剤の例としては、イソチアゾリン系化合物、パラオキシ安息香酸エステル類、フェノキシエタノール等が挙げられる。
ここに開示される研磨用組成物は、単結晶シリコンからなる研磨対象物(シリコンウエハ)の研磨に用いられ得る。研磨対象物の形状は特に制限されない。ここに開示される研磨用組成物は、例えば、板状や多面体状等の、平面を有する研磨対象物の研磨に好ましく適用され得る。
ここに開示される研磨用組成物は、典型的には該研磨用組成物を含む研磨液の形態で研磨対象物に供給されて、その研磨対象物の研磨に用いられる。上記研磨液は、例えば、ここに開示されるいずれかの研磨用組成物を希釈(典型的には、水により希釈)して調製されたものであり得る。あるいは、該研磨用組成物をそのまま研磨液として使用してもよい。すなわち、ここに開示される技術における研磨用組成物の概念には、研磨対象物に供給されて該研磨対象物の研磨に用いられる研磨液(ワーキングスラリー)と、希釈して研磨液として用いられる濃縮液(研磨液の原液)との双方が包含される。ここに開示される研磨用組成物を含む研磨液の他の例として、該組成物のpHを調整してなる研磨液が挙げられる。
また、ここに開示される研磨用組成物が界面活性剤を含む場合、アミド基含有ポリマーの含有量w1と界面活性剤の含有量w2との質量比(w1/w2)は特に制限されないが、例えば0.01~100の範囲とすることができ、0.05~50の範囲が好ましく、0.1~30の範囲がより好ましい。
あるいは、組成の単純化等の観点から、ここに開示される研磨用組成物は、界面活性剤を実質的に含まない態様でも好ましく実施され得る。
ここに開示される研磨用組成物は、研磨対象物に供給される前には濃縮された形態(すなわち、研磨液の濃縮液の形態)であってもよい。このように濃縮された形態の研磨用組成物は、製造、流通、保存等の際における利便性やコスト低減等の観点から有利である。濃縮倍率は、例えば、体積換算で2倍~100倍程度とすることができ、通常は5倍~50倍程度が適当である。好ましい一態様に係る研磨用組成物の濃縮倍率は10倍~40倍であり、例えば15倍~25倍である。
ここに開示される研磨用組成物の製造方法は特に限定されない。例えば、翼式攪拌機、超音波分散機、ホモミキサー等の周知の混合装置を用いて、研磨用組成物に含まれる各成分を混合するとよい。これらの成分を混合する態様は特に限定されず、例えば全成分を一度に混合してもよく、適宜設定した順序で混合してもよい。
ここに開示される研磨用組成物は、例えば以下の操作を含む態様で、研磨対象物の研磨に使用することができる。以下、ここに開示される研磨用組成物を用いて研磨対象物を研磨する方法の好適な一態様につき説明する。
すなわち、ここに開示されるいずれかの研磨用組成物を含む研磨液(典型的にはスラリー状の研磨液であり、研磨スラリーと称されることもある。)を用意する。上記研磨液を用意することには、研磨用組成物に濃度調整(例えば希釈)、pH調整等の操作を加えて研磨液を調製することが含まれ得る。あるいは、上記研磨用組成物をそのまま研磨液として使用してもよい。また、多剤型の研磨用組成物の場合、上記研磨液を用意することには、それらの剤を混合すること、該混合の前に1または複数の剤を希釈すること、該混合の後にその混合物を希釈すること、等が含まれ得る。
なお、上記研磨工程で使用される研磨パッドは特に限定されない。例えば、不織布タイプ、スウェードタイプ、砥粒を含むもの、砥粒を含まないもの等のいずれを用いてもよい。
ここに開示される研磨用組成物であって砥粒を含む研磨用組成物を用いて研磨された研磨物は、砥粒を含まない他は上記研磨用組成物と同じ成分を含むリンス液を用いてリンスされ得る。換言すると、ここに開示される技術では、砥粒を含まない他は上記研磨用組成物と同じ成分を含むリンス液を用いて上記研磨物をリンスする工程(リンス工程)を有してもよい。リンス工程により、研磨物の表面の欠陥やヘイズの原因となる砥粒等の残留物を低減させることができる。リンス工程は、ポリシング工程とポリシング工程との間に行われてもよいし、ファイナルポリシング工程の後であって後述の洗浄工程の前に行われてもよい。砥粒を含まない他は上記研磨用組成物と同じ成分を含むリンス液を用いてリンスすることにより、シリコンウエハ表面に吸着した上記アミド基含有ポリマーの作用を阻害せず、欠陥やヘイズをさらに低減することができる。かかるリンス液は、典型的にはシリコンウエハ研磨促進剤とアミド基含有ポリマーと水とを含むシリコンウエハ研磨用組成物(具体的には、シリコンウエハ研磨のリンスに用いられる組成物。リンス用組成物ともいう。)であり得る。このシリコンウエハのリンス用組成物の組成等については、砥粒を含まない他は上述のシリコンウエハ研磨用組成物と基本的に同じなので、ここでは説明は繰り返さない。
また、ここに開示される研磨用組成物を用いて研磨された研磨物は、典型的には、研磨後に(必要であればリンス後に)洗浄される。この洗浄は、適当な洗浄液を用いて行うことができる。使用する洗浄液は特に限定されず、例えば、半導体等の分野において一般的なSC-1洗浄液(水酸化アンモニウム(NH4OH)と過酸化水素(H2O2)と水(H2O)との混合液。以下、SC-1洗浄液を用いて洗浄することを「SC-1洗浄」という。)、SC-2洗浄液(HClとH2O2とH2Oとの混合液。)等を用いることができる。洗浄液の温度は、例えば常温~90℃程度とすることができる。洗浄効果を向上させる観点から、50℃~85℃程度の洗浄液を好ましく使用し得る。
実施例および比較例で使用する水溶性ポリマーの各々について、砥粒への吸着比を測定した。
上記吸着比の測定に供した水溶性ポリマーは、次のとおりである。
ポリアクリロイルモルホリン(PACMO) Mw4.5×104
ポリ-N-イソプロピルアクリルアミド(PNIPAM) Mw6.0×104
ポリビニルアルコール(PVA) Mw2.6×104
カチオン化PVA Mw2.6×104
ポリビニルピロリドン(PVP) Mw6.0×104
一方、後述する実施例および比較例で用いたものと同じ砥粒、測定対象ポリマー、アンモニア水(濃度29%)および脱イオン水を混合して、上記砥粒を0.46%、測定対象ポリマーを0.018%、アンモニア(NH3)を0.01%の濃度で含み、残部が水からなる試験液L1を調製した。その試験液L1に対し、ベックマン・コールター社製の遠心分離器、型式「Avanti HP-30I」を用いて20000rpmの回転数で30分間の遠心分離処理を行った。上記遠心分離処理後の上澄み液を回収し、その上澄み液のTOCを上記全有機体炭素計を用いて計測した。上記試験液L0のTOC値および上記試験液L1の上澄み液のTOC値から測定対象ポリマーの吸着比を算出した。結果を表1に示した。
(実施例1)
砥粒、水溶性ポリマー、アンモニア水(濃度29%)および脱イオン水を混合して、研磨用組成物の濃縮液を得た。この濃縮液を脱イオン水で20倍に希釈して、実施例1に係る研磨用組成物を調製した。
砥粒としては、平均一次粒子径35nm、平均二次粒子径66nmのコロイダルシリカを使用した。上記平均一次粒子径は、マイクロメリテックス社製の表面積測定装置、商品名「Flow Sorb II 2300」を用いて測定されたものである。また、上記平均二次粒子径は、日機装株式会社製の型式「UPA-UT151」を用いて測定された体積平均二次粒子径である。
水溶性ポリマーとしてはPACMOを使用した。
砥粒、水溶性ポリマーおよびアンモニア水の使用量は、研磨用組成物中における砥粒の含有量が0.46%となり、水溶性ポリマーの含有量が0.018%となり、アンモニア(NH3)の含有量が0.01%となる量とした。この研磨用組成物のpHは10.2であった。
PACMOに代えてPNIPAMを使用した他は実施例1と同様にして、実施例2に係る研磨用組成物を調製した。
PACMOに代えてPVA(比較例1)、カチオン化PVA(比較例2)、PVP(比較例3)を使用した他は実施例1と同様にして、比較例1~3に係る研磨用組成物をそれぞれ調製した。
各例に係る研磨用組成物をそのまま研磨液として使用して、シリコンウエハの表面を下記の条件で研磨した。シリコンウエハとしては、粗研磨を行い直径が300mm、伝導型がP型、結晶方位が<100>、抵抗率が0.1Ω・cm以上100Ω・cm未満であるものを、研磨スラリー(株式会社フジミインコーポレーテッド製、商品名「GLANZOX 2100」)を用いて予備研磨を行うことにより表面粗さ0.1nm~10nmに調整して使用した。
研磨機:株式会社岡本工作機械製作所製の枚葉研磨機、型式「PNX-332B」
研磨テーブル:上記研磨機の有する3テーブルのうち後段の2テーブルを用いて、予備研磨後のファイナル研磨1段目および2段目を実施した。
(以下の条件は各テーブル同一である。)
研磨荷重:15kPa
定盤回転数:30rpm
ヘッド回転数:30rpm
研磨時間:2分
研磨液の温度:20℃
研磨液の供給速度:2.0リットル/分(掛け流し使用)
研磨後のシリコンウエハを、NH4OH(29%):H2O2(31%):脱イオン水(DIW)=1:3:30(体積比)の洗浄液を用いて洗浄した(SC-1洗浄)。より具体的には、周波数950kHzの超音波発振器を取り付けた洗浄槽を2つ用意し、それら第1および第2の洗浄槽の各々に上記洗浄液を収容して60℃に保持し、研磨後のシリコンウエハを第1の洗浄槽に6分、その後超純水と超音波によるリンス槽を経て、第2の洗浄槽に6分、それぞれ上記超音波発振器を作動させた状態で浸漬した。
ケーエルエー・テンコール社製のウエハ検査装置、商品名「Surfscan SP2」を用いて、洗浄後の直径300mmのシリコンウエハ表面に存在する37nm以上の大きさのパーティクルの個数(LPD数)をカウントした。得られた結果を、比較例1のLPD数を100%とする相対値に換算して表1に示した。また、LPD数を示す欄において「測定不可」とは、上記ウエハ検査装置による欠陥測定においてData Overloadとなったこと、すなわちLPD数が測定上限を超えたこと、を表している。
洗浄後のシリコンウエハ表面につき、ケーエルエー・テンコール社製のウエハ検査装置、商品名「Surfscan SP2」を用いて、DWOモードでヘイズ(ppm)を測定した。得られた結果を、比較例1のヘイズ値を100%とする相対値に換算して表1に示した。
Claims (5)
- 砥粒の存在下で用いられるシリコンウエハ研磨用組成物であって、
シリコンウエハ研磨促進剤と、アミド基含有ポリマーと、水と、を含み、
前記アミド基含有ポリマーは、構成単位Aを主鎖に有しており、
前記構成単位Aは、前記アミド基含有ポリマーの主鎖を構成する主鎖構成炭素原子と、第二級アミド基または第三級アミド基と、を含み、
前記第二級アミド基または第三級アミド基を構成するカルボニル炭素原子は、前記主鎖構成炭素原子に直接結合している、シリコンウエハ研磨用組成物。 - 前記構成単位Aは、下記一般式(1):
下記一般式(2):
下記一般式(3):
- 前記アミド基含有ポリマーはノニオン性である、請求項1または2に記載のシリコンウエハ研磨用組成物。
- 前記砥粒はシリカ粒子である、請求項1から3のいずれか一項に記載のシリコンウエハ研磨用組成物。
- シリコンウエハ研磨促進剤と、アミド基含有ポリマーと、水と、を含み、
前記アミド基含有ポリマーは、構成単位Aを主鎖に有しており、
前記構成単位Aは、前記アミド基含有ポリマーの主鎖を構成する主鎖構成炭素原子と、第二級アミド基または第三級アミド基と、を含み、
前記第二級アミド基または第三級アミド基を構成するカルボニル炭素原子は、前記主鎖構成炭素原子に直接結合している、シリコンウエハのリンス用組成物。
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KR20160013896A (ko) | 2016-02-05 |
JP6037416B2 (ja) | 2016-12-07 |
CN105264647A (zh) | 2016-01-20 |
JPWO2014196299A1 (ja) | 2017-02-23 |
TWI650410B (zh) | 2019-02-11 |
SG11201508398TA (en) | 2015-11-27 |
EP3007213A1 (en) | 2016-04-13 |
JP6360108B2 (ja) | 2018-07-18 |
JP2016201557A (ja) | 2016-12-01 |
EP3007213A4 (en) | 2017-02-22 |
US20170253767A1 (en) | 2017-09-07 |
CN105264647B (zh) | 2018-01-09 |
EP3007213B1 (en) | 2020-03-18 |
TW201510197A (zh) | 2015-03-16 |
KR102239045B1 (ko) | 2021-04-12 |
US20160122591A1 (en) | 2016-05-05 |
US10745588B2 (en) | 2020-08-18 |
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