SG11201901590SA - Composition for surface treatment - Google Patents

Composition for surface treatment

Info

Publication number
SG11201901590SA
SG11201901590SA SG11201901590SA SG11201901590SA SG11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA SG 11201901590S A SG11201901590S A SG 11201901590SA
Authority
SG
Singapore
Prior art keywords
polished
composition
surface treatment
carbon atom
main chain
Prior art date
Application number
SG11201901590SA
Inventor
Jingzhi Chen
Original Assignee
Fujimi Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujimi Inc filed Critical Fujimi Inc
Publication of SG11201901590SA publication Critical patent/SG11201901590SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L29/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical; Compositions of hydrolysed polymers of esters of unsaturated alcohols with saturated carboxylic acids; Compositions of derivatives of such polymers
    • C08L29/02—Homopolymers or copolymers of unsaturated alcohols
    • C08L29/04—Polyvinyl alcohol; Partially hydrolysed homopolymers or copolymers of esters of unsaturated alcohols with saturated carboxylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L31/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an acyloxy radical of a saturated carboxylic acid, of carbonic acid or of a haloformic acid; Compositions of derivatives of such polymers
    • C08L31/02—Homopolymers or copolymers of esters of monocarboxylic acids
    • C08L31/04—Homopolymers or copolymers of vinyl acetate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/02—Homopolymers or copolymers of acids; Metal or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/24—Homopolymers or copolymers of amides or imides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L39/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a single or double bond to nitrogen or by a heterocyclic ring containing nitrogen; Compositions of derivatives of such polymers
    • C08L39/04—Homopolymers or copolymers of monomers containing heterocyclic rings having nitrogen as ring member
    • C08L39/06—Homopolymers or copolymers of N-vinyl-pyrrolidones
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/10—Definition of the polymer structure
    • C08G2261/14—Side-groups
    • C08G2261/145—Side-chains containing sulfur
    • C08G2261/1452—Side-chains containing sulfur containing sulfonyl or sulfonate-groups
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Emergency Medicine (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Dental Preparations (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Detergent Compositions (AREA)

Abstract

To provide a composition for surface treatment capable of treating a surface of a polished object to be polished having both of a silicon-silicon bond and a nitrogen-silicon bond by sufficiently removing defects on the surface of the 5 polished object to be polished. The composition for surface treatment contains a nonionic water-soluble polymer (A) having a main chain including only a carbon atom or a main chain consisting of a carbon atom and a nitrogen atom, and an anionic water-soluble polymer (B) having a main chain 10 including only a carbon atom and a side chain having a sulfonic acid group or a group having a salt thereof or a carboxyl group or a group having a salt thereof, and being bonded to the main chain including only a carbon atom, and the composition is used for surface treatment of a polished 15 object to be polished containing a silicon-silicon bond and a nitrogen-silicon bond and a pH of the composition is less than 9.0.
SG11201901590SA 2016-09-21 2017-08-09 Composition for surface treatment SG11201901590SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016184768 2016-09-21
PCT/JP2017/029003 WO2018055941A1 (en) 2016-09-21 2017-08-09 Surface treatment composition

Publications (1)

Publication Number Publication Date
SG11201901590SA true SG11201901590SA (en) 2019-03-28

Family

ID=61690250

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201901590SA SG11201901590SA (en) 2016-09-21 2017-08-09 Composition for surface treatment

Country Status (7)

Country Link
US (1) US11326049B2 (en)
JP (1) JP6880047B2 (en)
KR (1) KR102305256B1 (en)
CN (1) CN109716487B (en)
SG (1) SG11201901590SA (en)
TW (1) TWI805556B (en)
WO (1) WO2018055941A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10920179B2 (en) * 2016-11-10 2021-02-16 Tokyo Ohka Kogyo Co., Ltd. Cleaning solution and method for cleaning substrate
TWI827126B (en) * 2017-09-26 2023-12-21 日商福吉米股份有限公司 Surface treatment composition, method of making same and surface treatment method using same
WO2020100593A1 (en) * 2018-11-16 2020-05-22 東亞合成株式会社 Cleaning agent for semiconductor components and use of same
US11702570B2 (en) 2019-03-27 2023-07-18 Fujimi Incorporated Polishing composition
JP7267893B2 (en) * 2019-03-27 2023-05-02 株式会社フジミインコーポレーテッド Polishing composition
CN112457930A (en) * 2019-09-06 2021-03-09 福吉米株式会社 Surface treatment composition, method for producing surface treatment composition, surface treatment method, and method for producing semiconductor substrate
JP2022154513A (en) * 2021-03-30 2022-10-13 株式会社フジミインコーポレーテッド Semiconductor substrate manufacturing method, and semiconductor substrate obtained by the sane

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100447552B1 (en) * 1999-03-18 2004-09-08 가부시끼가이샤 도시바 Aqueous Dispersion, Aqueous Dispersion for Chemical Mechanical Polishing Used for Manufacture of Semiconductor Devices, Method for Manufacture of Semiconductor Devices, and Method for Formation of Embedded Wiring
SG91279A1 (en) * 1999-06-09 2002-09-17 Kuraray Co Polyvinyl alcohol polymer production method and polyvinyl alcohol polymer
JP4147369B2 (en) 1999-06-23 2008-09-10 Ｊｓｒ株式会社 Semiconductor component cleaning agent and semiconductor component cleaning method
US20020068454A1 (en) * 2000-12-01 2002-06-06 Applied Materials, Inc. Method and composition for the removal of residual materials during substrate planarization
TWI339680B (en) 2002-02-19 2011-04-01 Kanto Kagaku Washing liquid composition for semiconductor substrate
JP2003313542A (en) * 2002-04-22 2003-11-06 Jsr Corp Aqueous dispersion for chemomechanical polishing use
JP2005303060A (en) 2004-04-13 2005-10-27 Nitta Haas Inc Rinse polishing liquid
JP2006005246A (en) 2004-06-18 2006-01-05 Fujimi Inc Rinsing composition and rinsing method using the same
JP4613744B2 (en) * 2005-08-10 2011-01-19 株式会社Ｓｕｍｃｏ Cleaning method of silicon wafer
KR101260597B1 (en) * 2005-12-27 2013-05-06 히타치가세이가부시끼가이샤 Metal polishing liquid and method for polishing film to be polished
JPWO2008013226A1 (en) * 2006-07-28 2009-12-17 昭和電工株式会社 Polishing composition
EP2072460A4 (en) * 2006-08-30 2011-10-26 Kyocera Corp Reaction device, fuel cell system, and electronic apparatus
JP4777197B2 (en) 2006-09-11 2011-09-21 富士フイルム株式会社 Cleaning liquid and cleaning method using the same
US8614653B1 (en) * 2007-10-04 2013-12-24 Leah Salgado Electronic display device for special events
US8614053B2 (en) * 2009-03-27 2013-12-24 Eastman Chemical Company Processess and compositions for removing substances from substrates
US8444768B2 (en) * 2009-03-27 2013-05-21 Eastman Chemical Company Compositions and methods for removing organic substances
DE102009022477A1 (en) * 2009-05-25 2010-12-16 Universität Konstanz A method of texturing a surface of a semiconductor substrate and apparatus for performing the method
US8765653B2 (en) * 2009-07-07 2014-07-01 Air Products And Chemicals, Inc. Formulations and method for post-CMP cleaning
JP4772156B1 (en) * 2010-07-05 2011-09-14 花王株式会社 Polishing liquid composition for silicon wafer
WO2012043767A1 (en) * 2010-10-01 2012-04-05 三菱化学株式会社 Cleaning solution and cleaning method for semiconductor-device substrate
JP5801594B2 (en) 2011-04-18 2015-10-28 富士フイルム株式会社 Cleaning composition, cleaning method using the same, and semiconductor device manufacturing method
WO2012161135A1 (en) * 2011-05-26 2012-11-29 日立化成工業株式会社 Material for forming passivation film for semiconductor substrates, passivation film for semiconductor substrates, method for producing passivation film for semiconductor substrates, solar cell element, and method for manufacturing solar cell element
JP6407503B2 (en) * 2011-06-14 2018-10-17 株式会社フジミインコーポレーテッド Polishing composition
WO2013118042A1 (en) * 2012-02-06 2013-08-15 Basf Se A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and comprising no significant amounts of specific nitrogen-containing compounds
EP3007213B1 (en) * 2013-06-07 2020-03-18 Fujimi Incorporated Use of a composition for silicon wafer polishing
JP5920840B2 (en) * 2013-09-30 2016-05-18 株式会社フジミインコーポレーテッド Polishing composition and method for producing the same
KR101785450B1 (en) * 2013-10-04 2017-10-16 가부시키가이샤 사무코 Polishing agent composition, polishing agent composition for silicon wafer, and method for manufacturing silicon wafer product
JP6245939B2 (en) * 2013-10-25 2017-12-13 花王株式会社 Polishing liquid composition for silicon wafer
US10319605B2 (en) * 2016-05-10 2019-06-11 Jsr Corporation Semiconductor treatment composition and treatment method

Also Published As

Publication number Publication date
CN109716487B (en) 2023-12-01
KR20190055089A (en) 2019-05-22
KR102305256B1 (en) 2021-09-29
US20190203027A1 (en) 2019-07-04
US11326049B2 (en) 2022-05-10
TW201814034A (en) 2018-04-16
JPWO2018055941A1 (en) 2019-07-04
CN109716487A (en) 2019-05-03
JP6880047B2 (en) 2021-06-02
TWI805556B (en) 2023-06-21
WO2018055941A1 (en) 2018-03-29

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