WO2014192755A1 - 弾性波フィルタ装置 - Google Patents
弾性波フィルタ装置 Download PDFInfo
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- WO2014192755A1 WO2014192755A1 PCT/JP2014/063993 JP2014063993W WO2014192755A1 WO 2014192755 A1 WO2014192755 A1 WO 2014192755A1 JP 2014063993 W JP2014063993 W JP 2014063993W WO 2014192755 A1 WO2014192755 A1 WO 2014192755A1
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- elastic wave
- width
- bus bar
- resonators
- sound velocity
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
- H03H9/6483—Ladder SAW filters
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02992—Details of bus bars, contact pads or other electrical connections for finger electrodes
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/1457—Transducers having different finger widths
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6426—Combinations of the characteristics of different transducers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6489—Compensation of undesirable effects
- H03H9/6496—Reducing ripple in transfer characteristic
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/0004—Impedance-matching networks
- H03H9/0009—Impedance-matching networks using surface acoustic wave devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
- H03H9/6423—Means for obtaining a particular transfer characteristic
- H03H9/6433—Coupled resonator filters
Definitions
- the present invention relates to an elastic wave filter device formed by connecting a plurality of elastic wave resonators, and more particularly, to an elastic wave filter device having a series arm and a parallel arm.
- Patent Documents 1 and 2 below disclose a structure in which the sound speed at the electrode finger tip side portion is lower than the sound speed at the electrode finger intersection in the IDT electrode. Thereby, it is said that the ripple can be suppressed by the transverse mode by forming the piston mode.
- Patent Document 1 discloses that regions having different opening widths and sound speeds in series arm resonators are different from regions having different opening widths and sound speeds in parallel arm resonators.
- Patent Document 3 discloses a ladder type filter in which the crossing width of the parallel arm resonator is larger than the crossing width of the series arm resonator. As a result, spurious due to the transverse mode is suppressed and downsized. Increasing the crossing width of the parallel arm resonator increases the transverse mode harmonics. It is said that the transverse mode spurious is dispersed by the increase of the transverse mode harmonics.
- Patent Documents 1 and 2 disclose a configuration that suppresses transverse mode ripple by forming a piston mode. Further, Patent Document 1 describes that the shape of the region where the opening width and sound speed of the IDT electrode are different between the series arm resonator and the parallel arm resonator. However, the transverse mode ripple cannot be reliably suppressed simply by changing the regions having different opening widths and sound velocities between the series arm resonator and the parallel arm resonator.
- An object of the present invention is to provide an elastic wave filter device that can reliably suppress transverse mode ripple.
- the acoustic wave filter device has a series arm connecting the input terminal and the output terminal, a parallel arm connecting the series arm and the ground potential, and has a plurality of acoustic wave resonators.
- each acoustic wave resonator has a piezoelectric substrate and an IDT electrode formed on the piezoelectric substrate.
- the IDT electrode is electrically connected to the first bus bar, the second bus bar arranged to be separated from the first bus bar, and the base end to the first bus bar, A plurality of first electrode fingers extending to the second bus bar side and a base end connected to the second bus bar and extending toward the first bus bar side, the plurality of first electrode fingers And a plurality of second electrode fingers interleaved with each other.
- a central region is provided in the center of the IDT electrode in the direction in which the first and second electrode fingers extend, and the sound speed is relatively higher than the central region outside the central region in the direction in which the electrode fingers extend.
- a low low sound velocity region is provided, and a high sound velocity region having a higher elastic wave propagation velocity than the central region is provided outside the extending direction of the low sound velocity region.
- the width direction dimension of the low sound velocity region of at least one elastic wave resonator is the width direction of the low sound velocity region of the remaining elastic wave resonators. It is different from the dimensions.
- the first and second bus bars have a plurality of openings dispersedly arranged along the elastic wave propagation direction, and the IDT electrodes rather than the openings.
- the inner busbar part is the inner busbar part
- the part provided with the plurality of openings is the central busbar part
- the outer part of the central busbar part is the outer busbar part
- the inner busbar part is the elastic wave propagation It has a strip shape extending in the direction
- the central bus bar portion constitutes the high sound velocity region.
- the elastic wave filter device includes a width portion provided on a base end side with respect to the inner bus bar width and / or the central region, and the inner bus bar width and / or the The width of the thick portion is different between the at least one elastic wave resonator and the remaining elastic wave resonators.
- the plurality of acoustic wave resonators include a series arm resonator provided in a series arm and a parallel arm resonator provided in a parallel arm.
- a ladder-type filter is configured, and the at least one elastic wave resonator is the series arm resonator, and the remaining elastic wave resonator is the parallel arm resonator.
- the width direction dimension of the low acoustic velocity region of the series arm resonator is smaller than the width direction dimension of the low acoustic velocity region of the parallel arm resonator.
- each of the series arm resonator and the parallel arm resonator has a plurality of resonators, and a low sound velocity region of the plurality of series arm resonators.
- the width direction dimension is smaller than the width direction dimension of the low sound velocity region of the plurality of parallel arm resonators.
- At least one of the series arm resonators has a width direction dimension in a low sound velocity region, and the remaining series arm resonators. This is different from the width dimension of the low sound velocity region.
- the width direction dimension of the low sound velocity region of at least one parallel arm resonator is the remaining parallel arm resonator. This is different from the width dimension of the low sound velocity region.
- the low sound velocity region includes the inner busbar width and / or a thicker width portion provided closer to the base end side than the central region, The width of the bus bar and / or the width of the thick portion is smaller in the series arm resonator than in the parallel arm resonator.
- the transverse mode ripple is effective. It is possible to suppress it.
- FIGS. 1A and 1B are enlarged views of an IDT electrode of one series arm resonator and one parallel arm resonator of the acoustic wave filter device according to the first embodiment of the present invention.
- FIG. FIG. 2 is a circuit diagram of the acoustic wave filter device according to the first embodiment of the present invention.
- 3A and 3B are a schematic plan view of the series arm resonator S1-1 in the acoustic wave filter device according to the first embodiment of the present invention and an enlarged cross-sectional view showing the electrode structure thereof. is there.
- FIG. 4 is a diagram showing the filter characteristics of the elastic wave filter device according to the first and second embodiments of the present invention and the elastic wave filter device of the comparative example.
- FIG. 5 is a partially cutaway plan view showing a modification of the planar shape of the IDT electrode of the acoustic wave resonator used in the acoustic wave resonator used in the acoustic wave filter device of the present invention.
- FIG. 6 is a partially cutaway plan view showing another modification of the planar shape of the IDT electrode of the acoustic wave resonator used in the acoustic wave resonator used in the acoustic wave filter device of the present invention.
- FIG. 2 is a circuit diagram of the acoustic wave filter device according to the first embodiment of the present invention.
- the elastic wave filter device 1 is a ladder type filter.
- the present invention is not limited to ladder type filters, as will be described later.
- the acoustic wave filter device 1 has a series arm 4 that connects an input terminal 2 and an output terminal 3. First to third parallel arms 5, 6, and 7 that connect the serial arm 4 and the ground potential are provided. On the series arm 4, a plurality of series arm resonators S1-1 to S1-3, S2-1 to S2-3, and S3-1 to S3-3 are arranged. A capacitor C1 is connected in parallel with the series arm resonators S2-2 and S2-3.
- the parallel arm 5 connects the connection point between the series arm resonator S1-3 and the series arm resonator S2-1 and the ground potential.
- the parallel arm resonator P1 and the inductance L1 are connected in series.
- the second parallel arm 6 is connected to a connection point between the series arm resonator S2-3 and the series arm resonator S3-1.
- the third parallel arm 7 is connected to the output terminal 3.
- Parallel arm resonators P2 and P3 are disposed on the second parallel arm 6 and the third parallel arm 7, respectively.
- the second parallel arm 6 and the third parallel arm 7 are commonly connected by a common connection point 8, and an inductance L2 is connected between the common connection point 8 and the ground potential.
- the series arm resonators S1-1 to S3-3 and the parallel arm resonators P1 to P3 are each composed of a surface acoustic wave resonator.
- a surface acoustic wave resonator has a structure in which an IDT electrode is formed on a piezoelectric substrate.
- 3 (a) and 3 (b) are a schematic plan view of the series arm resonator S1-1 and an enlarged cross-sectional view showing an electrode structure thereof.
- the series arm resonator S1-1 includes a piezoelectric substrate 11 and an IDT electrode 12 formed on the piezoelectric substrate 11. Reflectors 13 and 14 are provided on both sides of the IDT electrode 12 in the surface acoustic wave propagation direction.
- the series arm resonator S1-1 is a one-port surface acoustic wave resonator having the above structure.
- a SiO 2 film and a SiN film are laminated as a dielectric layer so as to cover the IDT electrode 12 and the reflectors 13 and 14.
- FIG. 3B shows the laminated structure in an enlarged manner.
- the piezoelectric substrate 11 is made of 127.5 ° YX LiNbO 3 .
- the material constituting the piezoelectric substrate is not particularly limited. That is, various piezoelectric single crystals and piezoelectric ceramics can be used.
- FIG.3 (b) the part in which the one electrode finger of the said IDT electrode 12 is formed is expanded and shown.
- An IDT electrode 12 is formed on the piezoelectric substrate 11.
- the IDT electrode 12 is made of a laminated metal film. That is, the NiCr film 12a, the Pt film 12b, the Ti film 12c, the AlCu film 12d, and the Ti film 12e are stacked in order from the bottom.
- the thickness of each layer is set to NiCr film 12a: 100 :, Pt film 12b: 360 ⁇ , Ti film 12c: 100 ⁇ , AlCu film 12d: 1500 ⁇ , and Ti film 12e: 100 ⁇ .
- a SiO 2 film 15 is laminated so as to cover the IDT electrode 12.
- the thickness of the SiO 2 film 15 from the upper surface of the piezoelectric substrate 11 to the upper surface of the SiO 2 film 15 is 5700 mm.
- a SiN film 16 is laminated on the SiO 2 film 15.
- the SiN film 16 has a thickness of 200 mm.
- SiO 2 film 15 and the SiN film 16 which are the dielectric layers are not necessarily provided.
- the structure of the surface acoustic wave resonator is shown as a representative of the series arm resonator S1-1.
- the other series arm resonators S1-2 to S3-3 and the parallel arm resonators P1 to P3 have the same 1
- a port type surface acoustic wave resonator is used.
- the electrode structure and the thickness of the dielectric layer in each surface acoustic wave resonator were the same as those of the series arm resonator S1-1.
- a low sound velocity region and a high sound velocity region are provided in each surface acoustic wave resonator. It has been.
- the following low sound velocity region and high sound velocity region are provided. This will be described more specifically with reference to FIGS. 1 (a) and 1 (b).
- FIG. 1 (a) is a partially cutaway enlarged plan view showing the main part of the IDT electrode of the series arm resonator S3-1.
- the IDT electrode includes the first bus bar 21.
- FIG. 1 (a) only the first bus bar 21 side is shown, and the second bus bar side is not shown, but it is pointed out that it is configured in the same way as the first bus bar side. Keep it.
- the bus bar 21 has an inner bus bar portion 21A, a central bus bar portion 21B, and an outer bus bar portion 21C.
- the inside refers to the inside of the region where the first and second electrode fingers 23 and 24 intersect.
- the base end of the first electrode finger 23 is connected to the first bus bar 21.
- the base ends of the second electrode fingers 24 are connected to a second bus bar (not shown).
- an opening 25 is provided in the central bus bar portion 21B.
- the opening 25 has a rectangular shape.
- the shape of the opening 25 is not particularly limited.
- the inner bus bar portion 21A is an elongated strip-shaped bus bar portion. Therefore, since the region is metallized, a low sound velocity region is formed. Further, the proximal end portion of the first electrode finger 23 has a convex portion 23a and a plurality of wide width portions 23b having a width direction protruding portion. A wide width portion 24 a is also provided on the distal end side of the second electrode finger 24. Since the thick portions 23b and 24a are provided, this region constitutes a low sound velocity region.
- the widthwise central portion of the region where the first electrode finger 23 and the second electrode fingers 24 intersect is a central area indicated by the acoustic velocity V 1.
- the low sound velocity region is located outside the central region, and the high sound velocity region is located outside the low sound velocity region.
- the sound speed in the central area is V 1
- the sound speed in the low sound speed area is V 2 A
- the sound speed in the high sound speed area is V 3 .
- the width of the low sound velocity region is W1A
- the width of the high sound velocity region is W2.
- the width of the low sound velocity region of the series arm resonator S3-1 is W1A, and the widths of the low sound velocity regions of the series arm resonators S3-2 and S3-3 are also the same W1A.
- FIG. 1B is a diagram showing a main part of the IDT electrode of the parallel arm resonator P1 in the present embodiment.
- the electrode structure of the parallel arm resonator P1 is substantially the same as that of the series arm resonator S3-1 shown in FIG.
- the width W1B of the low sound speed region is larger than the width W1A of the low sound speed region shown in FIG. That is, in the present embodiment, the width W1A of the low sound velocity region in the series arm resonators S3-1 to S3-3 is smaller than the width W1B of the low sound velocity region of the parallel arm resonator P1.
- the width W1B of the low sound velocity region is made larger than the width of the low sound velocity region of the remaining parallel arm resonators P2 and P3 and the series arm resonators S1-1 to S3-3.
- the width W1A of the low sound velocity region of the series arm resonators S3-1 to S3-3 is smaller than the width of the low sound velocity region of the remaining resonators, the transverse mode ripple in the passband is reduced. It can be effectively suppressed. This will be described based on a specific experimental example.
- Table 1 shows design parameters of the series arm resonators S1-1 to S3-3 and the parallel arm resonators P1 to P3 of the present embodiment.
- the 4 represents the attenuation frequency characteristic of the elastic wave filter device 1 of the present embodiment.
- the broken line indicates the result of the comparative example in which the widths of the low sound velocity region and the high sound velocity region are the same in all the resonators.
- the alternate long and short dash line indicates the attenuation frequency characteristic of the second embodiment described later.
- the transverse mode ripple indicated by the arrow A is considered to be a ripple caused by the series arm resonators S3-1 to S3-3.
- the passband is constituted by the anti-resonance frequency of the parallel arm resonator and the resonance frequency of the series arm resonator. Therefore, if a transverse mode remains near the anti-resonance frequency of the parallel arm resonator and the resonance frequency of the series arm resonator, a ripple is generated in the passband.
- the transverse mode ripple indicated by the arrow A is not observed.
- the width W1A of the low sound velocity region is smaller than the width of the low sound velocity region of the remaining series arm resonators S1-1 to S2-3.
- the width W1B of the low sound velocity region is larger than the width of the low sound velocity region of the remaining parallel arm resonators P2 and P3 and the series arm resonators S1-1 to S1-3. Has also been enlarged. Therefore, the transverse mode ripple indicated by the arrow B is also suppressed.
- the width of the low sound velocity region of the series arm resonators S3-1 to S3-3 is the same as that of the series arm resonators S1-1 to S2-3 in the second embodiment. Except for this, it is the attenuation frequency characteristic of the elastic wave filter device configured in the same manner as in the above embodiment. That is, in the second embodiment, the width of the low sound velocity region of the series arm resonators S1-1 to S3-3 is made smaller than the width of the low sound velocity region of the parallel arm resonators P1 to P3. As apparent from comparing the filter characteristic indicated by the alternate long and short dash line with the filter characteristic of the comparative example indicated by the broken line, the transverse mode ripple caused by the parallel arm resonator P1 is also suppressed in the second embodiment. I understand that.
- the width W1A of the low acoustic velocity region of the series arm resonators S3-1 to S3-3 is set to be lower than that of the other series arm resonators S1-1 to S2-3. It is desirable to make it smaller than the width of the sound velocity region. As a result, it can be seen that the ripple indicated by the arrow A can also be suppressed.
- the width of the low sound velocity region in the series arm resonators S1-1 to S3-3 is set to the parallel arm resonator P1. It is desirable to make it smaller than the width of the low sound velocity region of P3.
- transverse mode ripples generated in the vicinity of the resonance frequency of the series arm resonator and in the vicinity of the antiresonance frequency of the parallel arm resonator can be suppressed, and as a result, the in-band ripple can be suppressed. Therefore, the in-band ripple in the elastic wave filter device having the ladder type circuit configuration can be effectively suppressed.
- Patent Document 1 describes that the shape of regions having different opening widths and sound velocities of IDT electrodes differs between series arm resonators and parallel arm resonators. It was difficult to suppress this.
- the transverse mode ripple can be suppressed by making the width of the low sound velocity region in the series arm resonator different from the width of the low sound velocity region in the parallel arm resonator. It was. Accordingly, the transverse mode ripple in the band can be effectively suppressed.
- the present invention is not limited to the acoustic wave filter device having the ladder type circuit configuration as in the above embodiment. That is, the present invention can be applied to various filter devices having a series arm and a parallel arm and having a plurality of elastic wave resonators.
- the filter device may include a series arm and a parallel arm, and an elastic wave resonator is arranged in each of the plurality of parallel arms, and no elastic wave resonator is arranged in the series arm.
- a plurality of elastic wave resonators may be connected in series to the series arm, and the filter device may not include the elastic wave resonator in the parallel arm.
- an elastic wave filter device having one elastic wave resonator in the series arm and one elastic wave resonator in the parallel arm may be used.
- the width of the low sound velocity region in at least one of the plurality of elastic wave resonators is made different from the width of the low sound velocity region in the remaining elastic wave resonators.
- In-band ripple can be suppressed.
- it is effective to reduce the width of the low sound velocity region of the elastic wave resonators arranged in the series arm rather than the elastic wave resonators arranged in the parallel arms, thereby reducing the ripple in the passband. It can be effectively suppressed.
- the acoustic wave resonator used in the present invention may be a surface acoustic wave resonator using the surface acoustic wave described above, or an acoustic wave resonator using another elastic wave such as a boundary acoustic wave. May be.
- any elastic wave resonator having an IDT electrode can be used.
- the width of the low sound velocity region can be changed in various forms. For example, taking the series arm resonator S3-1 shown in FIG. 1 (a) as an example, the widthwise dimension of the region where the thick width portion 23b is provided, and the strip-shaped bus bar portion constituting the inner bus bar portion 21A This can be achieved by, for example, a method of changing the width of.
- the configuration is not limited to the configuration in which a plurality of thick portions are provided on the distal end side and the proximal end side of the electrode finger shown in FIG.
- the configuration may be such that the portion 24 a is provided on the tip side of the second electrode finger 24.
- the first and second electrode fingers 23 and 24 may not be provided with a wide width portion, and the low sound velocity region may be formed only by the inner busbar portion 21A. In this case, the width of the low sound velocity region can be adjusted by adjusting the width of the inner bus bar portion 21A.
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Abstract
Description
2…入力端子
3…出力端子
4…直列腕
5~7…第1~第3の並列腕
8…共通接続点
11…圧電基板
12…IDT電極
12a…NiCr膜
12b…Pt膜
12c…Ti膜
12d…AlCu膜
12e…Ti膜
13,14…反射器
15…SiO2膜
16…SiN膜
21…バスバー
21A…内側バスバー部
21B…中央バスバー部
21C…外側バスバー部
23,24…第1,第2の電極指
23a…凸部
23b,24a…太幅部
25…開口部
51,61…弾性波共振子
S1-1~S3-3…直列腕共振子
P1~P3…並列腕共振子
Claims (9)
- 入力端子と出力端子とを結ぶ直列腕と、直列腕とグラウンド電位とを結ぶ並列腕とを有し、複数の弾性波共振子を有し、
各弾性波共振子が、圧電基板と、前記圧電基板上に形成されたIDT電極とを有し、
前記IDT電極が、第1のバスバーと、前記第1のバスバーと隔てられて配置された第2のバスバーと、
前記第1のバスバーに基端が電気的に接続されており、前記第2のバスバー側に延びる複数本の第1の電極指と、前記第2のバスバーに基端が接続されており、前記第1のバスバー側に向かって延び、複数本の前記第1の電極指と間挿し合っている複数本の第2の電極指とを有し、
前記IDT電極の前記第1,第2の電極指が延びる方向中央に中央領域が設けられており、前記中央領域の前記電極指の延びる方向外側に前記中央領域に比べて相対的に音速が低い低音速領域が設けられており、前記低音速領域の延びる方向外側に、前記中央領域よりも弾性波伝搬速度が高い高音速領域が設けられており、
弾性波伝搬方向と直交する方向を幅方向としたときに、少なくとも1つの弾性波共振子の低音速領域の幅方向寸法が、残りの弾性波共振子の低音速領域の幅方向寸法と異なっている、弾性波フィルタ装置。 - 前記第1,第2のバスバーが、前記弾性波伝搬方向に沿って分散配置された複数の開口を有し、該開口よりもIDT電極の幅方向内側部分が内側バスバー部、前記複数の開口部が設けられている部分が中央バスバー部、前記中央バスバー部の外側部分が外側バスバー部とされており、前記内側バスバー部が、前記弾性波伝搬方向に延びる帯状の形状を有しており、前記中央バスバー部が前記高音速領域を構成している、請求項1に記載の弾性波フィルタ装置。
- 前記内側バスバー幅および/または前記中央領域よりも基端側に設けられた太幅部を含み、前記内側バスバー幅および/または前記太幅部の幅が、前記少なくとも1つの弾性波共振子と、残りの弾性波共振子とで異なっている、請求項2に記載の弾性波フィルタ装置。
- 前記複数の弾性波共振子が、直列腕に設けられた直列腕共振子と、並列腕に設けられた並列腕共振子とを有するラダー型フィルタが構成されており、前記少なくとも1つの弾性波共振子が前記直列腕共振子であり、前記残りの弾性波共振子が前記並列腕共振子である、請求項1~3のいずれか1項に記載の弾性波フィルタ装置。
- 前記直列腕共振子の低音速領域の幅方向寸法が、前記並列腕共振子の低音速領域の幅方向寸法よりも小さい、請求項1~4のいずれか1項に記載の弾性波フィルタ装置。
- 前記直列腕共振子および前記並列腕共振子がそれぞれ複数の共振子を有し、前記複数の直列腕共振子の低音速領域の幅方向寸法が、前記複数の並列腕共振子の低音速領域の幅方向寸法よりも小さい、請求項1~5のいずれか1項に記載の弾性波フィルタ装置。
- 前記複数の直列腕共振子のうち、少なくともひとつの直列腕共振子の低音速領域の幅方向寸法が、残りの直列腕共振子の低音速領域の幅方向寸法と異なる、請求項5ないし6に記載の弾性波フィルタ装置。
- 前記複数の並列腕共振子のうち、少なくともひとつの並列腕共振子の低音速領域の幅方向寸法が、残りの並列腕共振子の低音速領域の幅方向寸法と異なる、請求項5ないし6に記載の弾性波フィルタ装置。
- 前記低音速領域は、前記内側バスバー幅および/または前記中央領域よりも基端側に設けられた太幅部を含み、前記内側バスバー幅および/または前記太幅部の幅が、直列腕共振子のほうが並列腕共振子よりも小さい、請求項1~8のいずれか1項に記載の弾性波フィルタ装置。
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KR101970217B1 (ko) | 2019-04-18 |
CN105264772A (zh) | 2016-01-20 |
KR20150144797A (ko) | 2015-12-28 |
EP3007358A4 (en) | 2017-01-25 |
JP6107947B2 (ja) | 2017-04-05 |
US9712139B2 (en) | 2017-07-18 |
EP3007358B1 (en) | 2019-10-23 |
US20160065176A1 (en) | 2016-03-03 |
CN105264772B (zh) | 2018-01-12 |
KR20170034939A (ko) | 2017-03-29 |
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JPWO2014192755A1 (ja) | 2017-02-23 |
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