WO2014148484A1 - 半導体素子搭載用リードフレーム及びその製造方法 - Google Patents
半導体素子搭載用リードフレーム及びその製造方法 Download PDFInfo
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- WO2014148484A1 WO2014148484A1 PCT/JP2014/057315 JP2014057315W WO2014148484A1 WO 2014148484 A1 WO2014148484 A1 WO 2014148484A1 JP 2014057315 W JP2014057315 W JP 2014057315W WO 2014148484 A1 WO2014148484 A1 WO 2014148484A1
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- WIPO (PCT)
- Prior art keywords
- lead frame
- semiconductor element
- element mounting
- mounting portion
- terminal portion
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000005530 etching Methods 0.000 claims description 97
- 239000002184 metal Substances 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 19
- 238000007788 roughening Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims 1
- 239000011347 resin Substances 0.000 abstract description 40
- 229920005989 resin Polymers 0.000 abstract description 40
- 238000007789 sealing Methods 0.000 abstract description 24
- 238000007747 plating Methods 0.000 description 16
- 239000011521 glass Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 230000003111 delayed effect Effects 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/4952—Additional leads the additional leads being a bump or a wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a lead frame for mounting a semiconductor element, and particularly to the shape of a semiconductor element mounting portion and a terminal portion.
- an improvement in the adhesion of a sealing resin to a terminal portion connected to the semiconductor element and also connected to the outside is one of the important points for improving the reliability of the product.
- Various techniques have been proposed for improving the adhesion to the resin and preventing the terminal portion from falling off. Specifically, there are a technique for forming a protrusion (ridge) on the upper surface side of the terminal part and a technique for roughening the side surface.
- Patent Document 1 discloses a technique for forming irregularities on the side surfaces by performing etching from the front and back sides.
- this technique is used in the conventional etching process from the front and back surfaces.
- This is a technique that can be handled by forming a difference in the etching mask on the side, and when etching a distance that is the same as or less than the thickness of the metal plate, the front side is narrowly opened and the back side is opened largely.
- the purpose is achieved, for example, by forming a lead frame by forming an etching mask.
- the end surface of the device mounting surface is designed to overhang the end surface of the exposed surface after mounting, preventing resin peeling.
- the resin is peeled off from the lead frame due to the influence of expansion / contraction and vibration due to the high thermal history that occurs during friction with the blade when cutting into pieces. In the market, further improvement in resin adhesion is required.
- an object of the present invention is to provide a lead frame for mounting a semiconductor element that effectively satisfies the adhesiveness with a sealing resin. There is.
- a lead frame for mounting a semiconductor device is provided on at least one side surface or both side surfaces of the semiconductor device mounting portion and the terminal portion on the mounting portion or the terminal portion.
- a protrusion is provided that protrudes in the horizontal direction from the edge of the lower surface, and the tip of the protrusion has a substantially flat or cross-sectional shape with an arcuate outline and is thick.
- the lead frame for mounting a semiconductor element has at least one side surface or both side surfaces of the semiconductor element mounting portion and the terminal portion, and the upper surface side is an edge of the lower surface of the semiconductor element mounting portion or the terminal portion. Projecting in the horizontal direction and extending further obliquely downward below the projected upper surface side, projecting in the horizontal direction from the edge of the upper surface of the semiconductor element mounting portion or terminal portion and projecting downward from the upper surface.
- a protrusion is formed, and the tip of the protrusion has a thickness of 25 ⁇ m or more and is rounded.
- the lead frame for mounting a semiconductor element has a top surface on a side surface of at least one of the semiconductor element mounting portion and the terminal portion, and a horizontal direction from an edge of the lower surface of the semiconductor element mounting portion or the terminal portion. And a protrusion that protrudes further horizontally than the edge of the upper surface of the semiconductor element mounting portion or terminal portion is formed below the protruding upper surface side, and the protrusion is formed from the lower corner of the tip portion. Furthermore, it is characterized by extending to the lower surface side.
- the protrusion is formed not only in the horizontal direction but also in the height direction on the side surface of the semiconductor element mounting portion or the terminal portion, so that it is resistant to stress from all directions and is not in contact with the resin. Since the contact area is also increased, it is possible to prevent resin peeling due to expansion / contraction due to thermal history when cutting into individual pieces, and resin peeling due to vibration when cutting into individual pieces.
- FIG. 10 is a photograph taken of the back side surface of the roughened protrusion shown in FIG. 9 from the direction directly below (at an angle perpendicular to the surface of the metal plate before processing from the exposed surface side).
- the lead frame metal plate 1 subjected to alkali / acid treatment is coated with a photosensitive resist layer and includes a pattern for forming protrusions. Exposing the photosensitive resist layer using a mask to transfer the pattern, forming a semiconductor element mounting portion and a terminal portion on the surface of the lead frame metal plate, and etching the lead frame metal plate 1 And a step of forming a lead frame shape including a protrusion on one or both of the side surface of the semiconductor element mounting portion and the terminal portion.
- a portion in which a resist layer for forming the protrusion is formed by etching in a state where a very thin resist layer is formed in the vicinity of the side surface including the semiconductor element mounting portion is formed in the vicinity of the side surface including the semiconductor element mounting portion.
- a resist layer 2 is formed on the surface including the semiconductor element mounting portion, and a resist with a very narrow width is formed on the back side, that is, the surface side exposed after resin sealing.
- layer 3 As a result of forming layer 3 and performing etching, it was possible to form protrusions 4 extending in the horizontal direction and in the height direction (downward) from the surface (mounting surface) of the semiconductor element mounting portion.
- the thickness of the formed protrusion 4 is very thin, 10 to 15 ⁇ m, and even if the etching condition is slightly different, the shape quality greatly fluctuates and the protrusion disappears, making it difficult to maintain the protrusion. Met.
- the tip shape of the protrusion 4 was sharp, and there was a great risk of becoming a starting point of a crack after resin sealing (see the left figure in FIGS. 2 and 3).
- the protrusions 4 are made thick as possible as shown in the right diagram of FIG. 3 so that the protrusions can be stably formed even if the etching conditions differ. there were.
- a very thin resist layer 3 applied only to the exposed surface side after resin sealing is also applied to the mounting surface side, and the protrusions after etching are made thick. Tried.
- the conditions of the metal plate 1 and the etching resist pattern layers 2 and 3 are the same as those in Examples 1, 4, and 5 described later. As a result, the thickness of the protrusion could be increased to 50 ⁇ m (see the central column diagram in FIG. 5).
- the etching amount was intentionally increased / decreased, it was also confirmed whether or not the protrusions disappeared. Even when the etching amount was increased, the thickness of the protrusions could remain as thick as 30 ⁇ m (see the left column in FIG. 5). .
- the tip 5 of the protrusion 4 is also changed from a sharp shape to a rounded shape (see the left column diagram and the central column diagram in FIG. 5) or a substantially planar shape (see the right column diagram in FIG. 5). It was confirmed that the occurrence of resin cracks from the protrusion tip 5 can also be suppressed.
- the protruding portion 4 has been described as being formed on one side surface of the semiconductor element mounting portion, but this protruding portion is also formed on both side surfaces of the semiconductor element mounting portion and one side surface and / or both side surfaces of the terminal portion. Needless to say, they can be formed in the same manner.
- a strip-shaped copper material having a thickness of 0.2 mm and a width of 180 mm (manufactured by Kobe Steel Co., Ltd .: KLF-194) is used, and a photosensitive resist layer having a thickness of 20 ⁇ m is formed on both surfaces of the metal plate. (Asahi Kasei E-Materials Co., Ltd .: negative photosensitive resist AQ-2058) was formed. And in order to form the protrusion part 4, the pattern (refer FIG. 4) for forming the etching resist pattern layer of width A: 40 micrometers on the mounting surface side and width B: 80 micrometers on the surface side exposed after resin sealing is included.
- a glass mask with a lead frame design Konica Minolta Advanced Layer Co., Ltd .: HY2-50P
- the lead frame etching resist pattern layer including the etching resist pattern was formed.
- the metal plate 1 on which the etching resist pattern layer including the pattern for forming the protrusion is formed is etched, and the very thin etching resist layer 3 for forming the protrusion formed on both surfaces of the metal plate 1 is used to etch the portion.
- Lead frame shape including protrusion 4 having a width (protrusion amount in the horizontal direction from the edge of the upper surface) E: 70 ⁇ m, height (protrusion amount downward from the upper surface) G: 100 ⁇ m, thickness F: 50 ⁇ m
- the etching resist layer was peeled off to obtain a strip-shaped copper material lead frame (see the central column in FIG. 5).
- the opening width between the etching resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 is set to 40 ⁇ m, and the surface side exposed after resin sealing In FIG.
- the opening width D between the etching resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 was set to 120 ⁇ m (see FIG. 4). After that, a very thin metal plating was applied in the form of a strip, and then cut into strips in the transverse direction, and a resin tape for fixing a sealing resin was applied to obtain a finished lead frame product.
- a strip-shaped copper material having a thickness of 0.2 mm and a width of 180 mm (manufactured by Kobe Steel, Ltd .: KLF-194) is used, and a photosensitive resist having a thickness of 20 ⁇ m is formed on both surfaces of the metal plate 1.
- a layer (manufactured by Asahi Kasei E-materials Co., Ltd .: negative photosensitive resist AQ-2058) was formed.
- a glass mask Konica Minolta Advanced
- a lead frame design including a pattern for forming an etching resist layer 3 having a width B of 90 ⁇ m only on the side exposed after resin sealing in order to form the protrusions 4.
- Etching resist pattern (etching speed control dummy pattern) for forming protrusions 4 by exposing and developing both surfaces of the metal plate 1 coated with a photosensitive resist layer using Layer Co., Ltd. (HY2-50P) An etching resist pattern layer for a lead frame was formed. Then, the metal plate 1 on which the etching resist pattern layer including the pattern for forming the protruding portion is formed is etched, and the portion B is formed by the etching resist layer 3 having a width B of 90 ⁇ m for forming the protruding portion formed on both surfaces of the metal plate 1.
- E width
- G height
- F thickness
- the protrusion width was smaller than that of Example 1, and the height of the protrusion was almost the same.
- the opening width D between the etching resist pattern layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 was set to 95 ⁇ m.
- the etching resist pattern layer is peeled off, ultra-thin metal plating is applied in the form of a strip, and then cut into strips in the transverse direction, and a resin tape for sealing resin fixing is applied to complete the lead frame product. It was.
- a strip-shaped copper material having a thickness of 0.2 mm and a width of 180 mm (manufactured by Kobe Steel, Ltd .: KLF-194) is used, and a photosensitive resist having a thickness of 20 ⁇ m is formed on both surfaces of the metal plate 1.
- a layer (manufactured by Asahi Kasei E-materials Co., Ltd .: negative photosensitive resist AQ-2058) was formed.
- both surfaces of the metal plate 1 with the photosensitive resist layer are exposed and developed to form the protrusions 4.
- a lead frame etching resist pattern layer including an etching resist pattern (dummy pattern for etching rate control) was formed. Then, the metal plate 1 on which the etching resist pattern layer including the pattern for forming the protrusion is formed is etched, and the portion is etched by the very thin etching resist layer 3 for forming the protrusion formed on both surfaces of the metal plate 1.
- Lead frame shape including protrusion 4 having a width (protrusion amount in the horizontal direction from the upper edge) E: 30 ⁇ m, height (protrusion amount downward from the upper surface) G: 150 ⁇ m, thickness F: 50 ⁇ m
- the etching resist layer was peeled off to manufacture a strip-shaped copper material lead frame (see FIGS. 4 and 8).
- the opening width between the etching resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 is set to 30 ⁇ m, and the surface side exposed after resin sealing In FIG.
- the opening width D between the etching resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 was 115 ⁇ m (see FIG. 4).
- the etching resist pattern layer is peeled off, and an extremely thin metal plating is applied in the form of a belt, and then cut into strips in the transverse direction, and a resin frame for sealing resin is applied to complete a lead frame product. did.
- a strip-like copper material having a thickness of 0.2 mm and a width of 180 mm (manufactured by Kobe Seisakusho Co., Ltd .: KLF-194) is used.
- a photosensitive resist layer having a thickness of 20 ⁇ m is formed on both surfaces of the metal plate 1. (Asahi Kasei E-Materials Co., Ltd .: negative photosensitive resist AQ-2058) was formed.
- an etching resist pattern layer (etching speed control dummy pattern) having a width A of 40 ⁇ m on the mounting surface side and a width B of 80 ⁇ m on the surface side exposed after resin sealing is formed.
- Lead frame shape including protrusion 4 having a width (protrusion amount in the horizontal direction from the edge of the upper surface) E: 70 ⁇ m, height (protrusion amount downward from the upper surface) G: 100 ⁇ m, thickness F: 50 ⁇ m (See the central column diagram in FIG. 5), and then the etching resist pattern layer was not peeled off.
- the opening width between the etching resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 is set to 40 ⁇ m, and the surface side exposed after resin sealing In FIG.
- the opening width D between the etching resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 was set to 120 ⁇ m (see FIG. 4).
- the surface of the portion not protected by the etching resist pattern layer is formed by using a strip-shaped lead frame on which the etching resist pattern layer has not been peeled off, including protrusions with an organic acid-based or hydrogen peroxide-sulfuric acid-based roughening solution.
- Ra average roughness
- the etching resist pattern layer is peeled off, thin metal plating is applied in the form of a strip, cut into strips in the transverse direction, and a resin tape for sealing resin fixing is applied to obtain a finished lead frame product. .
- a strip-shaped copper material having a thickness of 0.2 mm and a width of 180 mm (manufactured by Kobe Steel Co., Ltd .: KLF-194) is used, and a photosensitive resist layer (Asahi Kasei) having a thickness of 20 ⁇ m is formed on both surfaces of the metal plate 1.
- EMaterials Co., Ltd. product: AQ-2058 was formed.
- part of a lead frame was covered on the front and back of the metal plate 1 in the state of pattern alignment, and this both surfaces were exposed with the ultraviolet-ray through the glass mask.
- the metal plate on which the plating resist layer was formed was put into a plating tank, and Ag plating was performed on the portion of the metal plate where the metal was exposed by 3 ⁇ m. Then, the metal plate with a plating layer was able to be obtained by peeling a plating resist layer.
- the type of plating is not limited to the above, and any type of metal generally applicable to a lead frame such as Ni / Pd / Au may be used. Any plating configuration may be used.
- a photosensitive resist layer was formed again on the entire front and back surfaces of the metal plate.
- an etching resist pattern layer (etching speed control dummy pattern) having a width A of 40 ⁇ m on the mounting surface side and a width B of 80 ⁇ m on the surface side exposed after resin sealing is formed.
- a glass mask made by Konica Minolta Advanced Layer Co., Ltd.
- the etching progress of the portion is delayed, the width (the amount of protrusion in the horizontal direction from the edge of the upper surface) E: 70 ⁇ m, the height (the protrusion from the upper surface downward) Amount)
- a lead frame including protrusions 4 with G: 100 ⁇ m and thickness F: 50 ⁇ m was prepared (see the central column in FIG. 5).
- the opening width between the etching resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 is set to 40 ⁇ m, and the surface side exposed after resin sealing In FIG.
- the opening width D between the resist layer 2 for forming the lead frame and the etching resist layer 3 for forming the protrusions 4 was set to 120 ⁇ m (see FIG. 4).
- the etching resist pattern layer is peeled and removed after the etching, but the organic acid type or hydrogen peroxide-sulfuric acid type roughening is left with the etching resist pattern layer remaining. After the surface of the portion that is not protected by the etching resist pattern layer including the protrusions is roughened with a liquefying solution so that the average roughness (Ra) is 0.12 to 0.2 ⁇ m (see FIGS. 9 and 10). Then, the etching resist pattern layer was peeled to obtain a lead frame having a side surface protrusion for mold lock and a rough surface with improved resin adhesion on the surface thereof.
- a strip-shaped copper material KLF-194, manufactured by Kobe Steel, Ltd.
- a photosensitive resist layer having a thickness of 20 ⁇ m is formed on both surfaces of the metal plate.
- negative photosensitive resist AQ-2058 was formed.
- an etching resist for a lead frame including a pattern see FIG. 6) for forming an etching resist pattern layer having a width B of 110 ⁇ m only on the side exposed after resin sealing in order to form the protrusion 4.
- both surfaces of the metal plate 1 provided with the photosensitive resist layer were exposed and developed to form a lead frame etching resist pattern layer.
- the metal plate 1 on which the etching resist pattern layer is formed is etched, and the etching progress of that portion is delayed by the etching resist layer 3 having a very narrow width for forming the protrusions on the surface exposed after the resin sealing, A lead frame including the protrusions 4 was manufactured.
- the opening width D between the etching resist layer 2 for forming the lead frame and the resist layer 3 for forming the protrusions 4 was set to 125 ⁇ m (see FIG. 6).
- the thickness of the formed protrusion 4 is as thin as 15 ⁇ m, the protrusion is partially deformed and disappeared, and the tip shape is sharp, and the adhesion after resin sealing is insufficient. It had a shape with a high possibility of starting a resin crack (see FIG. 2).
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Abstract
Description
2 レジスト
3 レジスト(突起部形成用)
4 形成された突起部
5 突起部先端
Claims (17)
- 半導体素子搭載部及び端子部を備えたリードフレームにおいて、前記半導体素子搭載部および前記端子部のうち少なくとも一方の側面に、該半導体素子搭載部及び端子部の少なくとも一方の上下面の縁より水平方向に突出した突起部を備え、該突起部の先端は略平面あるいは断面の輪郭が円弧状をなしていて肉厚であることを特徴とする。
- 半導体素子が上面に搭載される半導体素子搭載部及び上面にワイヤボンディングされる端子部を備えたリードフレームにおいて、前記半導体素子搭載部および前記端子部のうち少なくとも一方の側面に、上面側が前記半導体素子搭載部あるいは端子部の下面の縁よりも水平方向に突出し且つその突出した上面側の下方で更に斜め下方向に延びることで、前記半導体素子搭載部あるいは端子部の上面の縁よりも水平方向に突出し且つ上面から下方にも突出している突起部が形成され、該突起部は25μm以上の厚さを有することを特徴とする。
- 半導体素子が上面に搭載される半導体素子塔載部及び上面にワイヤボンディングされる端子部を備えたリードフレームにおいて、前記半導体素子搭載部および前記端子部のうち少なくとも一方の側面に、上面側が前記半導体素子塔載部或いは端子部の下面の縁より水平方向に突出し且つその突出した上面側の下方で前記半導体素子搭載部あるいは端子部の上面の縁よりも更に水平方向に突出した突起部が形成され、該突起部はその先端部の下方側の角から更に下面側に延びていることを特徴とする。
- 前記半導体素子塔載部及び端子部の側面が、粗化処理により粗面化されていることを特徴とする請求項1乃至3の何れかに記載のリードフレーム。
- 前記半導体素子塔載部の側面の粗化面及び前記端子部の側面の粗化面の少なくとも一方にはめっきが施されていないことを特徴とする請求項4に記載のリードフレーム。
- 前記粗化面は、0.12~0.2μmの平均粗さを有することを特徴とする請求項4に記載のリードフレーム。
- 該突起部は30μm以上の厚さを有することを特徴とする請求項1乃至3の何れかに記載のリードフレーム。
- 前記半導体素子搭載部あるいは端子部の上面の縁から水平方向への前記突起部の突出量は10μm以上であることを特徴とする請求項2または3に記載のリードフレーム。
- 前記半導体素子搭載部あるいは端子部の上面の縁から水平方向への前記突起部の突出量は40μm以上であることを特徴とする請求項2または3に記載のリードフレーム。
- 前記半導体素子搭載部あるいは端子部の上面から下方への前記突起部の突出量は85μm以上であることを特徴とする請求項2または3に記載のリードフレーム。
- リードフレーム用金属板の両面に感光性レジスト層を形成する工程と、リードフレーム製造用マスクを用いて感光性レジスト層を露光、現像してリードフレーム用エッチングレジストパターン層を形成する工程と、該リードフレーム用金属板にエッチングを施して、半導体素子搭載部と端子部の側面の一方又は両方に突起部を含むリードフレーム形状を形成する工程とを有するリードフレームの製造方法において、該エッチングレジストパターン層は、エッチング側面に該突起部を形成するためのエッチング速度制御用ダミーパターンを含んでいることを特徴とする。
- 該エッチング速度制御用ダミーパターンは、半導体素子塔載部及び端子部の外形から一定の間隔を置いてリードフレーム用金属板の表裏に配置されていることを特徴とする請求項11に記載のリードフレームの製造方法。
- 前記エッチング速度制御用ダミーパターンと前記半導体素子塔載部及び端子部外形との距離はリードフレーム用金属板の表裏で異なることを特徴とする請求項12に記載のリードフレームの製造方法。
- 前記エッチング速度制御用ダミーパターンのサイズ及び形状は、リードフレーム用金属板の表裏で異なることを特徴とする請求項12又は13に記載のリードフレームの製造方法。
- 前記半導体素子塔載部を含む面のリードフレームパターンとエッチング速度制御用ダミーパターンの間隔よりも裏面側の実装用端子を含む面のリードフレームパターンとエッチング速度制御用ダミーパターンとの間隔を広く取ったことを特徴とする請求項12,13又は14に記載のリードフレームの製造方法。
- リードフレーム形状形成のためのエッチング工程の後にエッチングレジストパターン層を残した状態で、露出している金属板の側面を粗化液で処理することにより半導体素子塔載部及び端子部の側面に粗化面を形成する工程をさらに含むことを特徴とする請求項12乃至15の何れかに記載のリードフレームの製造方法。
- 該エッチング速度制御用ダミーパターンは幅90μmをもち、半導体素子搭載部及び端子部の外形から95μmの間隔を置いて金属板の裏面に配置されていることを特徴とする請求項11に記載のリードフレームの製造方法。
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