WO2014061337A1 - ナノカーボン膜の作製方法及びナノカーボン膜 - Google Patents
ナノカーボン膜の作製方法及びナノカーボン膜 Download PDFInfo
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- WO2014061337A1 WO2014061337A1 PCT/JP2013/071333 JP2013071333W WO2014061337A1 WO 2014061337 A1 WO2014061337 A1 WO 2014061337A1 JP 2013071333 W JP2013071333 W JP 2013071333W WO 2014061337 A1 WO2014061337 A1 WO 2014061337A1
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- silicon carbide
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- 229910021392 nanocarbon Inorganic materials 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 161
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 96
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 93
- 239000010408 film Substances 0.000 claims abstract description 89
- 238000000034 method Methods 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 20
- 238000005468 ion implantation Methods 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 239000002585 base Substances 0.000 claims description 43
- 238000011282 treatment Methods 0.000 claims description 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 229910021389 graphene Inorganic materials 0.000 claims description 17
- 238000001994 activation Methods 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- -1 hydrogen ions Chemical class 0.000 claims description 10
- 230000004913 activation Effects 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 5
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 229910003472 fullerene Inorganic materials 0.000 claims description 4
- 238000000678 plasma activation Methods 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 7
- 125000004429 atom Chemical group 0.000 description 10
- 238000005498 polishing Methods 0.000 description 10
- 206010040844 Skin exfoliation Diseases 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 3
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- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 238000011284 combination treatment Methods 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/188—Preparation by epitaxial growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/20—Doping by irradiation with electromagnetic waves or by particle radiation
- C30B31/22—Doping by irradiation with electromagnetic waves or by particle radiation by ion-implantation
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/06—Joining of crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Definitions
- the present invention relates to a method for producing a nanocarbon film, and particularly relates to a method for producing a nanocarbon film that can be produced at high quality and at a low cost, and a nanocarbon film produced by the production method.
- This nanocarbon is classified into fullerene, carbon nanotube, and graphene according to its structure.
- graphene is obtained by subjecting a silicon carbide (SiC) substrate to high-temperature heat treatment in a vacuum to form silicon on the surface of the silicon carbide substrate.
- SiC silicon carbide
- a method has been proposed in which atoms are sublimated and graphene is formed on the surface of the silicon carbide substrate by the remaining carbon atoms (Japanese Patent Laid-Open No. 2007-335532 (Patent Document 1)).
- this method has a problem that it is necessary to heat a very expensive silicon carbide substrate at a very high temperature and it is difficult to process the silicon carbide substrate. Moreover, when it is going to produce in large quantities, it was a very difficult method to manufacture both in terms of manufacturing process and price, such as the need to prepare a large amount of expensive silicon carbide substrates.
- Patent Document 3 Japanese Patent Laid-Open No. 2012-31011.
- Patent Document 4 Japanese Patent Laid-Open No. 2009-91174 (Patent Document 4)
- Patent Document 4 Japanese Patent Laid-Open No. 2009-91174
- a metal catalyst is used, a catalytic metal layer having high electrical conductivity remains, and a functional electronic device cannot be designed using only a graphene film.
- the present invention has been made in view of the above circumstances, and a method for producing a nanocarbon film using a hybrid substrate capable of producing a defect-free nanocarbon film at low cost, and a nanocarbon film produced by the production method
- the purpose is to provide.
- the present invention provides the following method for producing a nanocarbon film and a nanocarbon film.
- Ions are implanted from the surface of the single crystal silicon carbide substrate to form an ion implantation region, and the ion implanted surface of the silicon carbide substrate and the surface of the base substrate are bonded together, and then the ion implantation region is used.
- a hybrid substrate is manufactured by peeling a silicon carbide substrate and transferring a thin film containing single crystal silicon carbide onto a base substrate, and then heating the hybrid substrate to remove silicon atoms from the thin film containing single crystal silicon carbide.
- the base substrate is made of single crystal silicon, sapphire, polycrystalline silicon, alumina, silicon nitride, aluminum nitride, or diamond.
- At least the surface of the silicon carbide substrate and / or base substrate to be bonded is made of silicon oxide, single crystal silicon, polycrystalline silicon, amorphous silicon, alumina, silicon nitride, silicon carbide, aluminum nitride, and diamond.
- the method is characterized in that after bonding the silicon carbide substrate and the base substrate, thermal energy, mechanical energy, or optical energy is applied to the ion-implanted portion, and the ion-implanted region is separated.
- the present invention it is not necessary to prepare a large amount of an expensive silicon carbide substrate by thin film transfer of a single crystal silicon carbide film to a base substrate, and a nanocarbon film can be produced at low cost. Further, since the silicon carbide film is peeled into a thin film by an ion implantation peeling method, a thin nanocarbon film can be easily obtained. Furthermore, since a nanocarbon film is produced by sublimating silicon atoms of a high-quality single crystal silicon carbide film, it is possible to obtain a high-quality nanocarbon film with few defects.
- the method for producing a nanocarbon film according to the present invention includes a hydrogen ion implantation step (step 1), a base substrate preparation step (step 2), a silicon carbide substrate and / or a base substrate into a silicon carbide substrate.
- the processing is performed in the order of 7).
- the single crystal silicon carbide substrate 1 to be bonded to the base substrate 3 is preferably selected from those having a crystal structure of 4H—SiC, 6H—SiC, or 3C—SiC.
- the sizes of the silicon carbide substrate 1 and the base substrate 3 to be described later are set based on the size and cost of the required nanocarbon film.
- the thickness of the silicon carbide substrate 1 is preferably in the vicinity of the SEMI standard or JEIDA standard from the viewpoint of handling.
- the ion implantation energy may be set so as to obtain a desired thin film thickness.
- He ions, B ions, and the like may be implanted at the same time, and any ions may be adopted as long as the same effect can be obtained.
- the ion implantation depth depends on the desired thickness of the thin film, but can usually be 100 nm to 2,000 nm.
- the dose amount of hydrogen ions (H + ) implanted into silicon carbide substrate 1 is preferably 1.0 ⁇ 10 16 atoms / cm 2 to 9.0 ⁇ 10 17 atoms / cm 2 . If it is less than 1.0 ⁇ 10 16 atoms / cm 2 , the interface may not be embrittled. If it exceeds 9.0 ⁇ 10 17 atoms / cm 2 , bubbles are transferred during heat treatment after bonding. It may become defective.
- the dose is preferably 5.0 ⁇ 10 15 atoms / cm 2 to 4.5 ⁇ 10 17 atoms / cm 2 . If it is less than 5.0 ⁇ 10 15 atoms / cm 2 , the interface may not be embrittled. If it exceeds 4.5 ⁇ 10 17 atoms / cm 2 , bubbles are transferred during heat treatment after bonding. It may become defective.
- an insulating film such as a silicon oxide film of about 50 nm to 500 nm is formed in advance on the surface of the silicon carbide substrate 1 and hydrogen ions or hydrogen molecular ions are implanted therethrough, channeling of implanted ions is suppressed. An effect is obtained.
- a film similar to the film formed on the base substrate 3 as described later may be formed on the surface of the silicon carbide substrate 1.
- the material of the base substrate 3 used in the present invention one type may be selected from single crystal silicon, sapphire, polycrystalline silicon, alumina, silicon nitride, aluminum nitride, and diamond. Further, the thickness of the base substrate 3 is not particularly limited, but, like the silicon carbide substrate 1, a substrate in the vicinity of the normal SEMI standard or JEIDA standard is easy to handle from the handling relationship.
- At least one film selected from silicon oxide, single crystal silicon, polycrystalline silicon, amorphous silicon, alumina, silicon nitride, silicon carbide, aluminum nitride, and diamond is formed on at least the surface of the base substrate 3 to be bonded. It is preferable to form the film by a method selected from an oxidation treatment, a CVD (Chemical Vapor Deposition) method, an epitaxial treatment, or a sputtering method because the base substrate 3 and the silicon carbide substrate 1 can be bonded well. It is desirable to set the film thickness so that peeling does not occur when heat treatment described later is performed. In addition, a film forming method may be selected from the properties, cost, purity, and the like of each film.
- Process 3 Surface activation treatment process of silicon carbide substrate and / or base substrate
- at least one surface activation treatment selected from an ion beam treatment, a plasma activation treatment, an ozone treatment, an acid washing treatment, and an alkali washing treatment is performed on the surface to which the silicon carbide substrate 1 and the base substrate 3 are bonded.
- the ion beam treatment is performed by placing the silicon carbide substrate 1 and / or the base substrate 3 in a high vacuum chamber and irradiating the surface to be bonded with an ion beam of Ar or the like.
- the silicon carbide substrate 1 and / or the base substrate 3 is placed in a vacuum chamber, and after introducing a plasma gas under reduced pressure, the plasma is exposed to high-frequency plasma of about 100 W for about 5 to 10 seconds.
- the surface is plasma activated.
- oxygen gas, hydrogen gas, nitrogen gas, argon gas, a mixed gas thereof, or a mixed gas of hydrogen gas and helium gas can be used.
- the silicon carbide substrate 1 and / or the base substrate 3 cleaned by RCA cleaning or the like is placed in a chamber introduced with air, and irradiated with a UV lamp to remove oxygen in the air.
- a UV lamp to remove oxygen in the air.
- the silicon carbide substrate 1 and / or the base substrate 3 is immersed in a mixed solution of ammonia water + hydrogen peroxide solution or hydrochloric acid + hydrogen peroxide solution, and the surface is An activation process is performed by etching or the like.
- the above-described surface activation treatment may be performed only on silicon carbide substrate 1 or only on base substrate 3, but more preferably on both silicon carbide substrate 1 and base substrate 3.
- the surface activation treatment may be any one of the above methods, or a combination treatment may be performed. Furthermore, it is preferable that the surface of the silicon carbide substrate 1 and the base substrate 3 on which the surface activation process is performed is a surface on which the bonding is performed.
- heat treatment is preferably performed at 150 to 350 ° C., more preferably 150 to 250 ° C., to improve the bonding strength of the bonded surfaces.
- the warpage of the substrate occurs due to the difference in thermal expansion coefficient between the silicon carbide substrate 1 and the base substrate 3, but it is preferable to employ a temperature suitable for each material to suppress the warpage.
- the heat treatment time is preferably 2 hours to 24 hours, although depending on the temperature to some extent.
- heating is preferably performed at 350 ° C. or more, more preferably 400 to 600 ° C., and thermal energy is applied to the ion-implanted portion to generate minute bubble bodies in the ion-implanted portion. Since the ion-implanted portion is embrittled by the above heat treatment, a pressure that does not damage a wafer of, for example, 1 MPa or more and 5 MPa or less is appropriately selected in this embrittled portion, and a fluid such as gas or liquid is selected.
- peeling may be performed by combining two or more techniques.
- the silicon carbide substrate 1a after peeling can be reused as a bonding substrate in the nanocarbon film manufacturing method again by polishing or cleaning the surface.
- Process 6 Silicon carbide thin film polishing process
- the surface of the silicon carbide thin film 5 on the base substrate 3 is mirror-finished (FIG. 1E). Specifically, the silicon carbide thin film 5 is subjected to chemical mechanical polishing (CMP polishing) to finish it into a mirror surface.
- CMP polishing chemical mechanical polishing
- a conventionally known CMP polishing used for planarization of a silicon wafer or the like may be used.
- the hybrid substrate 6 is preferably heated to 1,100 ° C. or higher, more preferably 1,200 to 1,400 ° C., and still more preferably 1,250 to 1,350 ° C., so that silicon atoms (Si ) Is sublimated to obtain a nanocarbon film 7 having a thickness of about 50 to 1,500 nm (FIG. 1 (f)).
- the atmosphere of this heat treatment is preferably a vacuum atmosphere (reduced pressure) because silicon atoms are easily sublimated.
- the temperature condition at this time also changes depending on the atmosphere, the number of processed sheets, and the like, so that an optimal temperature is appropriately set.
- the nanocarbon film 7 after sublimation is either fullerene, graphene, or carbon nanotube depending on the production conditions. What is necessary is just to select suitably by a use.
- Example 1 As a single crystal silicon carbide substrate, a 4H-SiC substrate (thickness 400 ⁇ m) having a diameter of 75 mm on which an oxide film was grown in advance by 200 nm was prepared, and hydrogen ions were added thereto at 75 KeV and a dose of 2 ⁇ 10 17 atoms / cm 2. Injected. Next, a sapphire substrate (thickness: 400 ⁇ m) having a diameter of 75 mm serving as a base substrate was prepared, and ozone treatment was performed on the ion-implanted surface of the silicon carbide substrate and the surface of the sapphire substrate, and both were bonded together. Next, the bonded substrates were heat treated at 150 ° C.
- a hybrid substrate in which the silicon carbide film was uniformly transferred onto the surface of the sapphire substrate could be obtained.
- the transferred silicon carbide substrate was then subjected to 10 ⁇ m polishing and cleaning to remove dirt such as slurry during polishing, and used again as a substrate for bonding.
- the surface of the silicon carbide thin film of the obtained hybrid substrate is subjected to mirror polishing with a polishing thickness of 0.2 ⁇ m by CMP polishing using a desired slurry and pad, and then heated in vacuum at 1,280 ° C. for 10 hours. Treatment was performed to obtain a nanocarbon film. Then, when the film
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Abstract
Description
しかしながら、原子層の厚みのグラフェン膜を炭化珪素基板から剥離することが極めて難しく、歩留まりが非常に低いという問題点があった。
しかしながら、シリコン基板又はシリコン膜状に炭化珪素を成長させるために、その結晶構造に歪みが発生して欠陥が多い炭化珪素膜となり、そのため、グラフェン膜も欠陥が多くなるという問題点が生じた。
しかしながら、金属触媒を使用すると電気伝導度の高い触媒金属層が残ってしまい、グラフェン膜のみを用いて機能的な電子デバイスを設計することができなかった。
〔1〕 単結晶の炭化珪素基板の表面からイオンを注入してイオン注入領域を形成し、上記炭化珪素基板のイオン注入した表面とベース基板の表面とを貼り合わせた後、上記イオン注入領域で炭化珪素基板を剥離させてベース基板上に単結晶の炭化珪素を含む薄膜を転写させたハイブリッド基板を作製し、次いで該ハイブリッド基板を加熱して上記単結晶の炭化珪素を含む薄膜から珪素原子を昇華させてナノカーボン膜を得ることを特徴とするハイブリッド基板を用いたナノカーボン膜の作製方法。
〔2〕 上記ベース基板は、単結晶シリコン、サファイヤ、多結晶シリコン、アルミナ、窒化珪素、窒化アルミニウム、又はダイヤモンドからなることを特徴とする〔1〕記載のナノカーボン膜の作製方法。
〔3〕 上記炭化珪素基板及び/又はベース基板の少なくとも上記貼り合わせをする表面に、酸化シリコン、単結晶シリコン、多結晶シリコン、アモルファスシリコン、アルミナ、窒化珪素、炭化珪素、窒化アルミニウム、及びダイヤモンドから選ばれる少なくとも1種の膜を形成することを特徴とする〔1〕又は〔2〕記載のナノカーボン膜の作製方法。
〔4〕 上記炭化珪素基板の結晶構造が、4H-SiC、6H-SiC、又は3C-SiCであることを特徴とする〔1〕~〔3〕のいずれかに記載のナノカーボン膜の作製方法。
〔5〕 上記イオン注入領域の形成は、上記炭化珪素基板の表面から少なくとも水素イオンを含むイオンを注入して行うものであることを特徴とする〔1〕~〔4〕のいずれかに記載のナノカーボン膜の作製方法。
〔6〕 上記炭化珪素基板及び/又はベース基板の貼り合わせをする表面をイオンビーム処理、プラズマ活性化処理、オゾン処理、酸洗浄処理及びアルカリ洗浄処理から選ばれる少なくとも1種の表面活性化処理を行った後に、上記貼り合わせを行うことを特徴とする〔1〕~〔5〕のいずれかに記載のナノカーボン膜の作製方法。
〔7〕 上記炭化珪素基板とベース基板を貼り合わせた後に、イオン注入した部分に熱的エネルギー、機械的エネルギー又は光的エネルギーを付与して、上記イオン注入領域で剥離させることを特徴とする〔1〕~〔6〕のいずれかに記載のナノカーボン膜の作製方法。
〔8〕 上記炭化珪素基板とベース基板との貼り合わせは、150℃以上の加熱処理を含むことを特徴とする〔1〕~〔7〕のいずれかに記載のナノカーボン膜の作製方法。
〔9〕 上記ハイブリッド基板を1,100℃以上に加熱することにより、珪素原子を昇華させることを特徴とする〔1〕~〔8〕のいずれかに記載のナノカーボン膜の作製方法。
〔10〕 上記ハイブリッド基板を減圧下で加熱することにより、珪素原子を昇華させることを特徴とする〔1〕~〔9〕のいずれかに記載のナノカーボン膜の作製方法。
〔11〕 上記ナノカーボン膜がカーボンナノチューブ、グラフェン又はフラーレンからなることを特徴とする〔1〕~〔10〕のいずれかに記載のナノカーボン膜の作製方法。
〔12〕 上記剥離を行った後の炭化珪素基板を再びナノカーボン膜の作製用に用いることを特徴とする〔1〕~〔11〕のいずれかに記載のナノカーボン膜の作製方法。
〔13〕 〔1〕~〔12〕のいずれかに記載のナノカーボン膜の作製方法により作製されたナノカーボン膜。
本発明に係るナノカーボン膜の作製方法は、図1に示すように、炭化珪素基板への水素イオン注入工程(工程1)、ベース基板準備工程(工程2)、炭化珪素基板及び/又はベース基板の表面活性化処理工程(工程3)、炭化珪素基板とベース基板の貼り合わせ工程(工程4)、剥離処理工程(工程5)、炭化珪素薄膜研磨工程(工程6)、珪素原子昇華工程(工程7)の順に処理を行うものである。
まず、単結晶の炭化珪素基板1に水素イオン等を注入してイオン注入領域2を形成する(図1(a))。
イオン注入深さは、所望の薄膜の厚さによるが、通常、100nm~2,000nmとすることができる。
本発明で用いるベース基板3の材料としては、単結晶シリコン、サファイヤ、多結晶シリコン、アルミナ、窒化珪素、窒化アルミニウム、ダイヤモンドから1種を選択すればよい。また、ベース基板3の厚さは、特に限定されないが、炭化珪素基板1と同様に、通常のSEMI規格又はJEIDA規格近傍のものがハンドリングの関係から扱いやすい。
次に、炭化珪素基板1とベース基板3の貼り合わせをする表面をイオンビーム処理、プラズマ活性化処理、オゾン処理、酸洗浄処理、アルカリ洗浄処理から選ばれる少なくとも1つの表面活性化処理を行う。
更に、炭化珪素基板1、ベース基板3の表面活性化処理を行う面は、貼り合わせを行う面であることが好ましい。
次に、この炭化珪素基板1及びベース基板3の表面活性化処理をした表面を接合面として貼り合わせて、貼り合わせ基板4とする(図1(c))。
炭化珪素基板1とベース基板3とを貼り合わせ、貼り合わせ強度を向上させた後、イオン注入した部分に熱的エネルギー、機械的エネルギー又は光的エネルギーを付与して、イオン注入領域2で剥離させ、ベース基板3上に炭化珪素薄膜5を有するハイブリッド基板6を作製する(図1(d))。
ベース基板3上の炭化珪素薄膜5表面を鏡面仕上げする(図1(e))。具体的には、炭化珪素薄膜5に化学機械研磨(CMP研磨)を施して鏡面に仕上げる。ここではシリコンウェハの平坦化等に用いられる従来公知のCMP研磨でよい。
上記ハイブリッド基板6を好ましくは1,100℃以上、より好ましくは1,200~1,400℃、更に好ましくは1,250~1,350℃に加熱することにより炭化珪素薄膜5の珪素原子(Si)を昇華させて、厚さ50~1,500nm程度のナノカーボン膜7を得る(図1(f))。この加熱処理の雰囲気は真空雰囲気(減圧)にすると珪素原子が昇華されやすいので好ましい。また、このときの温度条件も雰囲気や処理枚数等により変化するので適宜最適な温度に設定をする。
単結晶の炭化珪素基板として、予め酸化膜を200nm成長させた直径75mmの4H-SiC基板(厚さ400μm)を準備し、これに75KeV,ドーズ量2×1017atom/cm2で水素イオンを注入した。
次に、ベース基板となる直径75mmのサファイヤ基板(厚さ400μm)を準備し、炭化珪素基板のイオン注入した表面ならびにサファイヤ基板の表面にオゾン処理を行い、両者を貼り合わせた。
次いで、貼り合わせた基板に対して、150℃で5時間熱処理を施して接合体を得た。
次いで、この接合体をボートにセットした後に、700℃まで拡散炉にて昇温をしたところ、サファイヤ基板表面に炭化珪素膜が均一に転写されるハイブリッド基板を得ることが出来た。なお、転写後の炭化珪素基板は、この後、表面を10μm研磨及び研磨時のスラリー等の汚れを除去する洗浄を施し、再度貼り合わせ用の基板として使用した。
得られたハイブリッド基板の炭化珪素薄膜表面を所望のスラリー、パッドを用いたCMP研磨にて、研磨厚さ0.2μmの鏡面研磨を行った後、真空中で1,280℃、10時間の加熱処理を施して、ナノカーボン膜を得た。
その後、サファイヤ基板上の膜をラマンスペクトルで評価したところ、グラフェンの膜が表面に作製されていることが確認された。
炭化珪素基板(直径75mmの4H-SiC基板(厚さ400μm))を用意し、真空中の加熱により珪素原子を昇華させ、表面にグラフェン膜を形成した。このグラフェン膜を他の基板に剥離、転写しようとしたが、できなかった。
炭化珪素基板(直径75mmの4H-SiC基板(厚さ400μm))上に炭化珪素をエピタキシャル成長させた基板を用意し、珪素原子を昇華させる真空中の加熱処理を行った。基板表面にグラフェン膜が形成されたが、ラマンスペクトルで評価したところ、欠陥が多数発生していることが確認された。
2 イオン注入領域
3 ベース基板
4 貼り合わせ基板
5 炭化珪素薄膜
6、6’ ハイブリッド基板
7 ナノカーボン膜
Claims (13)
- 単結晶の炭化珪素基板の表面からイオンを注入してイオン注入領域を形成し、上記炭化珪素基板のイオン注入した表面とベース基板の表面とを貼り合わせた後、上記イオン注入領域で炭化珪素基板を剥離させてベース基板上に単結晶の炭化珪素を含む薄膜を転写させたハイブリッド基板を作製し、次いで該ハイブリッド基板を加熱して上記単結晶の炭化珪素を含む薄膜から珪素原子を昇華させてナノカーボン膜を得ることを特徴とするハイブリッド基板を用いたナノカーボン膜の作製方法。
- 上記ベース基板は、単結晶シリコン、サファイヤ、多結晶シリコン、アルミナ、窒化珪素、窒化アルミニウム、又はダイヤモンドからなることを特徴とする請求項1記載のナノカーボン膜の作製方法。
- 上記炭化珪素基板及び/又はベース基板の少なくとも上記貼り合わせをする表面に、酸化シリコン、単結晶シリコン、多結晶シリコン、アモルファスシリコン、アルミナ、窒化珪素、炭化珪素、窒化アルミニウム、及びダイヤモンドから選ばれる少なくとも1種の膜を形成することを特徴とする請求項1又は2記載のナノカーボン膜の作製方法。
- 上記炭化珪素基板の結晶構造が、4H-SiC、6H-SiC、又は3C-SiCであることを特徴とする請求項1~3のいずれか1項記載のナノカーボン膜の作製方法。
- 上記イオン注入領域の形成は、上記炭化珪素基板の表面から少なくとも水素イオンを含むイオンを注入して行うものであることを特徴とする請求項1~4のいずれか1項記載のナノカーボン膜の作製方法。
- 上記炭化珪素基板及び/又はベース基板の貼り合わせをする表面をイオンビーム処理、プラズマ活性化処理、オゾン処理、酸洗浄処理及びアルカリ洗浄処理から選ばれる少なくとも1種の表面活性化処理を行った後に、上記貼り合わせを行うことを特徴とする請求項1~5のいずれか1項記載のナノカーボン膜の作製方法。
- 上記炭化珪素基板とベース基板を貼り合わせた後に、イオン注入した部分に熱的エネルギー、機械的エネルギー又は光的エネルギーを付与して、上記イオン注入領域で剥離させることを特徴とする請求項1~6のいずれか1項記載のナノカーボン膜の作製方法。
- 上記炭化珪素基板とベース基板との貼り合わせは、150℃以上の加熱処理を含むことを特徴とする請求項1~7のいずれか1項記載のナノカーボン膜の作製方法。
- 上記ハイブリッド基板を1,100℃以上に加熱することにより、珪素原子を昇華させることを特徴とする請求項1~8のいずれか1項記載のナノカーボン膜の作製方法。
- 上記ハイブリッド基板を減圧下で加熱することにより、珪素原子を昇華させることを特徴とする請求項1~9のいずれか1項記載のナノカーボン膜の作製方法。
- 上記ナノカーボン膜がカーボンナノチューブ、グラフェン又はフラーレンからなることを特徴とする請求項1~10のいずれか1項記載のナノカーボン膜の作製方法。
- 上記剥離を行った後の炭化珪素基板を再びナノカーボン膜の作製用に用いることを特徴とする請求項1~11のいずれか1項記載のナノカーボン膜の作製方法。
- 請求項1~12のいずれか1項記載のナノカーボン膜の作製方法により作製されたナノカーボン膜。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016088466A1 (ja) * | 2014-12-05 | 2016-06-09 | 信越化学工業株式会社 | 複合基板の製造方法及び複合基板 |
WO2016104291A1 (ja) * | 2014-12-22 | 2016-06-30 | 信越化学工業株式会社 | 複合基板、ナノカーボン膜の作製方法及びナノカーボン膜 |
JP2019151543A (ja) * | 2018-03-02 | 2019-09-12 | 国立研究開発法人産業技術総合研究所 | 炭化珪素エピタキシャルウェハ及びその製造方法 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004196631A (ja) * | 2002-12-20 | 2004-07-15 | Japan Fine Ceramics Center | ナノカーボンの製造方法 |
JP2007335532A (ja) | 2006-06-13 | 2007-12-27 | Hokkaido Univ | グラフェン集積回路 |
JP2009091174A (ja) | 2007-10-04 | 2009-04-30 | Univ Of Fukui | グラフェンシートの製造方法 |
JP2009200177A (ja) | 2008-02-20 | 2009-09-03 | Denso Corp | グラフェン基板及びその製造方法 |
JP2012031011A (ja) | 2010-07-30 | 2012-02-16 | Seiko Epson Corp | グラフェンシート付き基材及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10322182A1 (de) * | 2003-05-16 | 2004-12-02 | Blue Membranes Gmbh | Verfahren zur Herstellung von porösem, kohlenstoffbasiertem Material |
EP1901345A1 (en) * | 2006-08-30 | 2008-03-19 | Siltronic AG | Multilayered semiconductor wafer and process for manufacturing the same |
JP2009203118A (ja) * | 2008-02-28 | 2009-09-10 | Fujifilm Corp | ナノカーボン膜、それを用いた電極、及びその製造方法 |
TW201014788A (en) * | 2008-10-02 | 2010-04-16 | Univ Nat Chunghsing | Method for preparing nano carbon materials and substrate containing the same and polymeric film and application thereof |
CN102120574A (zh) * | 2011-03-15 | 2011-07-13 | 东南大学 | 制备大范围二维纳米材料石墨烯的方法 |
CN102717537B (zh) * | 2011-03-29 | 2015-03-11 | 清华大学 | 石墨烯-碳纳米管复合膜结构 |
CN102633258A (zh) * | 2012-05-10 | 2012-08-15 | 中国科学院上海微系统与信息技术研究所 | 一种无需衬底转移的制备石墨烯的方法 |
CN102659098B (zh) * | 2012-05-21 | 2013-07-24 | 武汉大学 | 一种制备石墨烯的设备及方法 |
CN102674318B (zh) * | 2012-05-31 | 2013-09-25 | 西安电子科技大学 | 基于C注入的Cu膜辅助退火石墨烯纳米带制备方法 |
-
2013
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004196631A (ja) * | 2002-12-20 | 2004-07-15 | Japan Fine Ceramics Center | ナノカーボンの製造方法 |
JP2007335532A (ja) | 2006-06-13 | 2007-12-27 | Hokkaido Univ | グラフェン集積回路 |
JP2009091174A (ja) | 2007-10-04 | 2009-04-30 | Univ Of Fukui | グラフェンシートの製造方法 |
JP2009200177A (ja) | 2008-02-20 | 2009-09-03 | Denso Corp | グラフェン基板及びその製造方法 |
JP2012031011A (ja) | 2010-07-30 | 2012-02-16 | Seiko Epson Corp | グラフェンシート付き基材及びその製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2907790A4 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
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JPWO2016088466A1 (ja) * | 2014-12-05 | 2017-08-31 | 信越化学工業株式会社 | 複合基板の製造方法及び複合基板 |
EP3229260A4 (en) * | 2014-12-05 | 2018-07-25 | Shin-Etsu Chemical Co., Ltd. | Composite substrate manufacturing method and composite substrate |
CN107004573A (zh) * | 2014-12-05 | 2017-08-01 | 信越化学工业株式会社 | 复合基板的制造方法和复合基板 |
WO2016088466A1 (ja) * | 2014-12-05 | 2016-06-09 | 信越化学工業株式会社 | 複合基板の製造方法及び複合基板 |
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JPWO2016104291A1 (ja) * | 2014-12-22 | 2017-08-31 | 信越化学工業株式会社 | 複合基板、ナノカーボン膜の作製方法及びナノカーボン膜 |
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EP3239100A4 (en) * | 2014-12-22 | 2018-07-11 | Shin-Etsu Chemical Co., Ltd. | Composite substrate, method for forming nanocarbon film, and nanocarbon film |
WO2016104291A1 (ja) * | 2014-12-22 | 2016-06-30 | 信越化学工業株式会社 | 複合基板、ナノカーボン膜の作製方法及びナノカーボン膜 |
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KR102427272B1 (ko) | 2014-12-22 | 2022-07-29 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 복합 기판, 나노카본막의 제작 방법 및 나노카본막 |
JP2019151543A (ja) * | 2018-03-02 | 2019-09-12 | 国立研究開発法人産業技術総合研究所 | 炭化珪素エピタキシャルウェハ及びその製造方法 |
JP7426642B2 (ja) | 2018-03-02 | 2024-02-02 | 国立研究開発法人産業技術総合研究所 | 炭化珪素エピタキシャルウェハの製造方法 |
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EP2907790A1 (en) | 2015-08-19 |
EP2907790B1 (en) | 2019-05-08 |
US20150262862A1 (en) | 2015-09-17 |
KR20150070161A (ko) | 2015-06-24 |
US9379000B2 (en) | 2016-06-28 |
TWI613145B (zh) | 2018-02-01 |
KR102115631B1 (ko) | 2020-05-26 |
JPWO2014061337A1 (ja) | 2016-09-05 |
TW201431776A (zh) | 2014-08-16 |
JP5896038B2 (ja) | 2016-03-30 |
EP2907790A4 (en) | 2016-05-18 |
CN104736477B (zh) | 2016-11-02 |
CN104736477A (zh) | 2015-06-24 |
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