WO2014042055A1 - Dispositif à semi-conducteurs - Google Patents

Dispositif à semi-conducteurs Download PDF

Info

Publication number
WO2014042055A1
WO2014042055A1 PCT/JP2013/073814 JP2013073814W WO2014042055A1 WO 2014042055 A1 WO2014042055 A1 WO 2014042055A1 JP 2013073814 W JP2013073814 W JP 2013073814W WO 2014042055 A1 WO2014042055 A1 WO 2014042055A1
Authority
WO
WIPO (PCT)
Prior art keywords
sensor
substrate
mems
mems sensor
semiconductor device
Prior art date
Application number
PCT/JP2013/073814
Other languages
English (en)
Japanese (ja)
Inventor
菊入　勝也
尚信 大川
Original Assignee
アルプス電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by アルプス電気株式会社 filed Critical アルプス電気株式会社
Priority to JP2014535505A priority Critical patent/JP5859133B2/ja
Publication of WO2014042055A1 publication Critical patent/WO2014042055A1/fr

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
    • B81B7/0019—Protection against thermal alteration or destruction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0292—Sensors not provided for in B81B2201/0207 - B81B2201/0285
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS

Definitions

  • the present invention relates to a semiconductor device provided with a MEMS sensor.
  • Patent Document 1 and Patent Document 2 disclose inventions related to MEMS devices. As shown in Patent Documents 1 and 2, the MEMS sensor is disposed on a substrate and sealed with a mold resin. The MEMS sensor is formed mainly of silicon.
  • thermal stress is applied to the MEMS sensor due to the difference in coefficient of linear thermal expansion between the MEMS sensor and the mold resin covering the MEMS sensor and the difference in coefficient of linear thermal expansion between the MEMS sensor and the substrate. As a result, there is a problem that the sensor sensitivity is lowered.
  • an object of the present invention is to provide a semiconductor device that can reduce the influence of thermal stress on the MEMS sensor.
  • the semiconductor device in the present invention is A MEMS sensor mainly composed of silicon laminated on a support substrate via a first die bond resin, a first silicon substrate laminated via a second die bond resin on the MEMS sensor, and a sealing material And a mold resin as Each die bond resin is formed of a softer material than the mold resin.
  • the first silicon substrate of the same kind as that of the MEMS sensor is disposed on the MEMS sensor. Therefore, since the first silicon substrate having the same or close linear thermal expansion coefficient as the MEMS sensor is interposed between the MEMS sensor and the mold resin, the influence of the mold resin having a different linear thermal expansion coefficient from above the MEMS sensor. Do not receive directly.
  • a first silicon substrate of the same type as the MEMS sensor is overlaid on the MEMS sensor, and is softer than the mold resin between the MEMS sensor and the first silicon substrate and between the support substrate and the MEMS sensor. By using a simple die bond resin, it becomes possible to effectively mitigate the influence of thermal stress on the MEMS sensor.
  • the first silicon substrate constitutes an ASIC for a magnetic sensor, and the magnetic sensor is disposed on the ASIC for the magnetic sensor.
  • the number of parts can be reduced, and the semiconductor device can be downsized.
  • the MEMS sensor can be appropriately covered with one magnetic sensor ASIC (first silicon substrate), and the influence of thermal stress on the MEMS sensor can be effectively reduced, and multi-axis detection can be performed.
  • Possible magnetic sensors can be arranged.
  • the Young's modulus of each die bond resin is preferably 0.1 to 10 GPa, and the Young's modulus of the mold resin is preferably 10 to 30 GPa. This makes it possible to effectively mitigate the influence of thermal stress on the MEMS sensor.
  • the support substrate is a printed circuit board made of a glass epoxy substrate.
  • bonding between the glass epoxy substrate and the MEMS sensor via a die-bonding resin alleviates the influence of thermal stress on the MEMS sensor due to the difference in linear thermal expansion coefficient between the glass epoxy substrate and the MEMS sensor. can do.
  • the MEMS sensor has a configuration in which a sensor substrate mainly composed of silicon and a functional layer are stacked, and the sensor substrate disposed on the support substrate via the first die-bonding resin includes: It is preferable that at least an ASIC for a MEMS sensor is configured. As a result, the number of parts can be reduced, and the semiconductor device can be miniaturized.
  • the MEMS sensor has a laminated structure in which the functional layer is provided between a first sensor substrate and a second sensor substrate, the first sensor substrate is the ASIC, The first sensor substrate is preferably formed thicker than the second sensor substrate. Thereby, it becomes possible to reduce the influence of the thermal stress on the MEMS sensor more effectively.
  • the MEMS sensor is laminated on a second silicon substrate disposed on a support substrate via the first die bond resin.
  • the upper and lower sides of the MEMS sensor are sandwiched between the first silicon substrate and the second silicon substrate made of the same material as the MEMS sensor via a soft die bond resin.
  • the second silicon substrate constitutes at least an ASIC for a MEMS sensor.
  • the number of parts can be reduced, and the semiconductor device can be miniaturized.
  • the MEMS sensor preferably has a structure in which a sensor substrate mainly composed of silicon and a functional layer are laminated.
  • a plurality of the MEMS sensors are stacked.
  • the some MEMS sensor is arranged in parallel on the common ASIC for MEMS sensors.
  • FIG. 1 is a perspective view of the semiconductor device according to the first embodiment.
  • FIG. 2 is a longitudinal sectional view of the semiconductor device shown in FIG.
  • FIG. 3 is a partially enlarged longitudinal sectional view of a printed circuit board constituted by the glass epoxy substrate in the present embodiment.
  • FIG. 4A is a plan view showing an example of a functional layer of the MEMS sensor in the present embodiment
  • FIG. 4B is a partially enlarged longitudinal section showing a part of the MEMS sensor in the embodiment enlarged.
  • FIG. FIG. 5A is a partially enlarged plan view of a Y-axis magnetic sensor that detects an external magnetic field in the Y-axis direction
  • FIG. 5B is a portion of the Z-axis magnetic sensor that detects an external magnetic field in the Z-axis direction.
  • FIG. 4C is an enlarged longitudinal sectional view, and FIG. 4C is a partially enlarged plan view of an X-axis magnetic sensor that detects an external magnetic field in the X-axis direction.
  • FIG. 6 is a longitudinal sectional view of the semiconductor device according to the second embodiment.
  • FIG. 7 is a longitudinal sectional view of the semiconductor device according to the third embodiment.
  • FIG. 8 is a longitudinal sectional view of the semiconductor device according to the fourth embodiment.
  • FIG. 9 is a longitudinal sectional view of a semiconductor device according to the fifth embodiment.
  • FIG. 10 is a perspective view of the semiconductor device used in the simulation experiment.
  • FIG. 11 is a graph showing the relationship between the Young's modulus of the die bond resin and the offset amount in the MEMS sensor.
  • a MEMS sensor 3 and a magnetic sensor 4 are stacked on a printed circuit board (support substrate) 2 formed of a glass epoxy substrate. Therefore, the semiconductor device 1 is configured to have the functions of the MEMS sensor 3 and the magnetic sensor 4.
  • the MEMS sensor 3 is an acceleration sensor
  • the magnetic sensor 4 is a geomagnetic sensor.
  • a MEMS sensor 3 mainly composed of silicon is laminated on a printed board 2 via a first die bond resin 5.
  • the MEMS sensor 3 includes a first sensor substrate 6, a second sensor substrate 7, and a functional layer 8 provided between the first sensor substrate 6 and the second sensor substrate 7. It is comprised.
  • the functional layer 8 will be described with reference to FIGS.
  • the functional layer 8 is a silicon layer.
  • a frame body layer 15 is formed in the peripheral region, and the inside of the frame body layer 15 is a sensor region formation region.
  • the frame body layer 15 is indicated by oblique lines.
  • the functional layer 8 has a first hole 26, a second hole 27, and a third hole 28 that define the outer shape of the sensor portion inside the frame body layer 15.
  • Each hole 26, 27, 28 penetrates the frame layer 15 in the thickness direction.
  • the frame layer 15 and the second sensor substrate 7 are joined by an insulating layer 29.
  • the second sensor substrate 7 is made of silicon.
  • the frame layer 15 and the first sensor substrate 6 are bonded by the metal bonding layer 30.
  • the metal bonding layer 30 is formed by eutectic bonding of an Al layer 36 and a Ge layer 37, for example.
  • the first sensor substrate 6 has a configuration in which an insulating layer 6b is formed on the surface of a silicon substrate 6a, and a wiring layer is formed inside the insulating layer 6b.
  • the first movable body 41 is provided in the first hole 26.
  • the first movable portion 41 can detect the acceleration in the Z direction in the direction orthogonal to the sensor substrates 6 and 7.
  • a second movable body 42 is provided in the second hole 27.
  • the second movable body 42 can detect the acceleration in the Y direction parallel to the substrate surfaces of the sensor substrates 6 and 7.
  • a third movable body 43 is provided in the third hole 28.
  • the third movable body 43 can detect acceleration in the X direction orthogonal to the Z direction and the Y direction.
  • Each of the movable bodies 41 to 43 is cut out from the silicon layer by deep RIE or the like.
  • the sensor structure shown in FIG. 4A is, for example, a capacitance type, and is provided with a fixed portion that faces each of the movable bodies 41 to 43. Based on the change in capacitance generated between the movable bodies 41 to 43 and the fixed portion, accelerations in the X direction, the Y direction, and the Z direction can be detected.
  • the detection method may be other than the capacitance type.
  • an anchor portion 44 that supports the movable bodies 41 to 43 and the fixed portion is provided, and the anchor portion 44 and the second sensor substrate 7 are joined via an insulating layer 29. ing. Further, the anchor portion 44 and the first sensor substrate 6 are bonded by a metal bonding layer 30 formed by eutectic bonding of an Al layer 36 and a Ge layer 37.
  • symbol 46 shown in FIG.4 (b) is a movable body.
  • the movable body 46 is one of the movable bodies 41 to 43 shown in FIG. 4A, but is not particularly limited in FIG. 4B.
  • the movable body 46 is connected to the anchor portion 44 via a spring portion (not shown).
  • the anchor portion 44 is electrically connected to the wiring layer 45 provided in the insulating layer 6 b of the first sensor substrate 6 through the metal bonding layer 30. Capacitance change can be detected through the wiring layer 45.
  • the configuration of the functional layer 8 shown in FIG. 4A is merely an example, and the configuration of another functional layer 8 may be used.
  • An SOI substrate can be constituted by the second silicon substrate 7, the functional layer 8, and the insulating layer 29 shown in FIG. SiO 2 can be selected for the insulating layer 29.
  • the insulating layer 6b on the first sensor substrate 6 side is formed of SiO 2 , SiN, or the like, and may be a single layer or a structure in which a plurality of insulating layers of different materials are stacked.
  • the MEMS sensor 3 includes insulating layers 6b and 29 and a metal bonding layer 30, but the other parts are basically silicon.
  • the MEMS sensor 3 has a structure in which the functional layer 8 is a silicon layer, and the sensor substrates 6 and 7 facing the functional layer 8 (silicon layer) have a silicon substrate. It has a main structure.
  • the MEMS sensor 3 has a first sensor substrate 6 disposed on the lower surface side and a second sensor substrate 7 disposed on the upper surface side, and the upper and lower surfaces of the MEMS sensor 3. The silicon surface is exposed.
  • the first sensor substrate 6 constituting the MEMS sensor 3 also serves as the ASIC for the MEMS sensor. That is, the first sensor substrate 6 has a role of a wiring substrate for the functional layer 8 of the MEMS sensor 3 and a role as an ASIC.
  • the wiring layer 45 shown in FIG. 4B is connected to the ASIC circuit. As shown in FIGS. 1 and 2, a plurality of electrode portions 10 are formed on the surface of the first sensor substrate (MEMS sensor ASIC 6). Is exposed.
  • a silicon substrate (first silicon substrate) 11 is bonded on the MEMS sensor 3 via a second die bond resin 9.
  • first silicon substrate not only the first silicon substrate but also the second silicon substrate exists.
  • first and second terms for the silicon substrate are used for portions other than the MEMS sensor 3. This is applied to a silicon substrate.
  • the first silicon substrate 11 constitutes an ASIC 12 for a magnetic sensor.
  • the magnetic sensor ASIC 12 includes various semiconductor elements 11a to 11d formed on the surface of the first silicon substrate 11, an insulating layer 13 covering the surface of the first silicon substrate 11, and each semiconductor element. 11a to 11d and an electrode portion 14 electrically connected via a wiring layer (not shown).
  • a plurality of magnetic sensors 4a and 4b are arranged on the ASIC 12 for magnetic sensors.
  • One magnetic sensor 4 may be provided, but a plurality of magnetic sensors 4a and 4b are provided in the first embodiment.
  • the magnetic sensor 4a is for detecting an external magnetic field in the X-axis direction and the Y-axis direction
  • the magnetic sensor 4b is for detecting an external magnetic field in the Z-axis direction.
  • FIG. 5A shows a part of the Y-axis magnetic sensor 16.
  • the Y-axis magnetic sensor 16 electrically connects a plurality of element portions 16a extending in the X direction and spaced apart in the Y direction, and the end portions of the element portions 16a. And a connection portion 16b connected to the.
  • the element portion 16a is formed of, for example, an element structure of a GMR element, and the sensitivity axis direction is the Y direction.
  • the sensitivity axis direction is a direction in which the electric resistance value of the element portion 16a becomes the maximum value or the minimum value when an external magnetic field acts in that direction.
  • the element portion 16a is a GMR element
  • the fixed magnetization direction of the fixed magnetic layer (pinned layer) constituting the GMR element is the sensitivity axis direction.
  • the Y-axis magnetic sensor 16 in FIG. 5A can detect the external magnetic field in the Y direction based on the change in electrical resistance when the external magnetic field from the Y direction acts.
  • FIG. 5B shows a part of the Z-axis magnetic sensor 17.
  • the Z-axis magnetic sensor 17 includes an element portion 17a, an insulating layer 17b covering the element portion 17a, and a soft magnetic body 17c provided on the insulating layer 17b. Has been.
  • the element unit 17a is, for example, a GMR element, and the sensitivity axis direction is, for example, the Y direction.
  • the external magnetic field H1 that has entered the soft magnetic body 17c from the Z direction (vertical direction) leaks from the lower end 17c1 of the soft magnetic body 17c, a part thereof is converted into the X direction.
  • the external magnetic field H2 is configured. By arranging the element portion 17a at a place where the external magnetic field H2 acts, the external magnetic field H1 in the Z direction can be apparently detected by the element portion 17a.
  • FIG. 5C shows a part of the X-axis magnetic sensor 18.
  • the X-axis magnetic sensor 18 electrically connects a plurality of element portions 18a extending in the Y direction and spaced apart in the X direction, and ends of the element portions 18a. And a connecting portion 18b connected to the.
  • the element portion 18a has, for example, a laminated structure of GMR elements, and the sensitivity axis direction is the X direction.
  • the X-axis magnetic sensor 18 in FIG. 5C can detect the external magnetic field in the X direction based on the change in electrical resistance when the external magnetic field from the X direction acts.
  • the forms of the Y-axis magnetic sensor 16, the Z-axis magnetic sensor 17, and the X-axis magnetic sensor 18 may be other than those shown in FIG.
  • a magnetic sensor 4a shown in FIG. 1 has a package structure including a Y-axis magnetic sensor 16 and an X-axis magnetic sensor 18 shown in FIGS. Further, the magnetic sensor 4b shown in FIG. 1 has a package structure including the Z-axis magnetic sensor 17 shown in FIG.
  • the magnetic sensors 4a and 4b are fixedly supported on the magnetic sensor ASIC 12.
  • Each magnetic sensor 4a, 4b constitutes a geomagnetic sensor, for example.
  • a plurality of electrode portions 12 a are exposed on the surface of the magnetic sensor ASIC 12.
  • the electrode part 12a of the magnetic sensor ASIC 12 and the output part of each of the magnetic sensors 4a and 4b are electrically connected by wire bonding.
  • the plurality of electrode portions 12a and the plurality of electrode portions 12b are electrically connected via a circuit in the magnetic sensor ASIC.
  • a mold resin 20 as a sealing material covers the printed board 2, the side surfaces of the MEMS sensor 3 and the magnetic sensor 4, and the surface of the magnetic sensor 4.
  • the mold resin 20 is shown transparent so that the MEMS sensor 3 and the magnetic sensor 4 disposed inside the conductor device 1 can be seen.
  • the mold resin 20 is in contact with the surface of the MEMS sensor 3, the first silicon substrate 11 (ASIC 12 for magnetic sensor), and the magnetic sensor 4 with almost no gap.
  • Each electrode portion 2b provided on the surface and the electrode portion 12b provided on the magnetic sensor ASIC 12 are electrically connected to each other by wire bonding.
  • a plurality of electrodes 2a and 2b provided on the front surface of the printed circuit board 2 are electrically connected to the back surface of the printed circuit board 2 through internal wiring layers (not shown).
  • a terminal portion 2c is provided.
  • the first die bond resin 5 and the second die bond resin 9 shown in FIG. 2 are made of a softer material than the mold resin 20.
  • the material is not particularly limited as long as the die bond resins 5 and 9 are softer than the mold resin 20, but as an example, the die bond resins 5 and 9 are epoxy resins, and the mold resin 20 is an epoxy resin and a glass filler. Is a mixed configuration.
  • the material can be changed between the first die bond resin 5 and the second die bond resin 9, the same material can reduce the production cost and the heat to the MEMS sensor 3. It is preferable because it can effectively relieve stress.
  • the mold resin 20 has a configuration in which, for example, a glass filler is mixed in the resin as described above so as to approach the linear thermal expansion coefficient of the printed circuit board 2 configured by the glass epoxy substrate 2.
  • the first silicon substrate 11 made of the same material as that of the MEMS sensor 3 is overlaid on the MEMS sensor 3. Arranged. That is, since the first silicon substrate 11 that is the same as or close to the linear thermal expansion coefficient of the MEMS sensor 3 is interposed between the MEMS sensor 3 and the mold resin 20, the MEMS sensor 3 has a linear thermal expansion coefficient from above. The influence of the different mold resin 20 can be avoided directly. However, the thermal stress applied to the MEMS sensor 3 cannot be sufficiently relaxed only by stacking the first silicon substrate 11 of the same type as the MEMS sensor 3 on the MEMS sensor 3.
  • the die bond resins 5 and 9 used between the MEMS sensor 3 and the first silicon substrate 11 and between the printed circuit board (support substrate) 2 and the MEMS sensor 3 are used in place of the mold resin 20.
  • a soft material was used. Thereby, the influence of the thermal stress on the MEMS sensor 3 can be effectively reduced.
  • each die bond resin 5 and 9 is softer than the mold resin 20
  • each die bond resin 5 and 9 has a Young's modulus lower than that of the mold resin 20.
  • the die bond resins 5 and 9 have a Young's modulus of 0.1 to 10 GPa and the mold resin 20 has a Young's modulus of 10 to 30 GPa.
  • the Young's modulus of the die bond resins 5 and 9 is preferably 1 ⁇ 2 or less, more preferably 1 ⁇ 4 or less of the Young's modulus of the mold resin 20.
  • the first silicon substrate 11 constitutes an ASIC 12 for magnetic sensor
  • the magnetic sensor 4 is disposed on the ASIC 12 for magnetic sensor.
  • the ASIC 12 for magnetic sensor need not be provided separately from the first silicon substrate 11. Therefore, the number of components can be reduced, and the semiconductor device 1 can be reduced in size (reduced in height).
  • a plurality of magnetic sensors 4a and 4b having different detection directions of the external magnetic field are arranged on a common ASIC 12 for magnetic sensors.
  • the MEMS sensor 3 can be appropriately covered with one magnetic sensor ASIC (first silicon substrate 11) 12, and the influence of thermal stress on the MEMS sensor 3 can be effectively reduced.
  • a magnetic sensor 4 capable of multi-axis detection can be arranged.
  • substrate and the MEMS sensor 3 are joined by the die-bonding resin 5 softer than the mold resin 20, it is a printed circuit board (glass epoxy board
  • the first sensor substrate 6 constituting the MEMS sensor 3 also serves as the wiring substrate of the MEMS sensor 3 and the ASIC for the MEMS sensor.
  • the number of parts can be reduced, and the semiconductor device 1 can be reduced in size (reduced height).
  • the first sensor substrate 6 has a thickness dimension T1
  • the second sensor substrate 7 has a thickness dimension T2
  • T1 is thicker than T2.
  • FIG. 6 is a longitudinal sectional view of the semiconductor device 50 according to the second embodiment.
  • the same parts as those of the semiconductor device 1 shown in FIGS. 1 and 2 are denoted by the same reference numerals.
  • a second silicon substrate 51 is laminated on a printed board 2 made of a glass epoxy substrate via a third die bond resin 54.
  • a MEMS sensor 53 is laminated on the second silicon substrate 51 via the first die bond resin 5.
  • the first silicon substrate 11 is laminated on the MEMS sensor 53 via the second die bond resin 9.
  • the first silicon substrate 11 constitutes a magnetic sensor ASIC 12, and the magnetic sensor 4 is installed on the magnetic sensor ASIC 12.
  • a mold resin as a sealing material is formed on the printed circuit board 2 from the second silicon substrate 51, the MEMS sensor 53, the first silicon substrate 11 (ASIC 12 for the magnetic sensor), the side surfaces of the magnetic sensor 4, and the magnetic sensor 4. 20 is provided.
  • Each die bond resin 5, 9, 54 is a softer material than the mold resin 20.
  • a second silicon substrate 51 is provided between the MEMS sensor 53 and the printed board 2. Therefore, in FIG. 6, the upper and lower sides of the MEMS sensor 53 are sandwiched between the first silicon substrate 11 and the second silicon substrate 51 via the soft die bond resins 5 and 9. Thereby, the influence of the thermal stress with respect to the MEMS sensor 53 can be relieved more effectively.
  • the second silicon substrate 51 constitutes at least an ASIC 55 for a MEMS sensor.
  • the second sensor substrate 52 constituting the MEMS sensor 53 can be used only as a wiring substrate for the MEMS sensor 53.
  • the MEMS sensor 53 has a laminated structure in which the functional layer 8 is interposed between the first sensor substrate 52 and the second sensor substrate 7.
  • the second sensor substrate 52 has a configuration in which an insulating layer having a wiring layer is formed on the surface of a silicon substrate, and the MEMS sensor 53 has a silicon-based configuration including a silicon substrate and a silicon layer.
  • the electrode 52a of the second sensor substrate 52 which is the wiring substrate of the MEMS sensor 53, and the electrode portion 55a of the ASIC 55 are wire-bonded.
  • the second silicon substrate 51 may be an ASIC for both the magnetic sensor 4 and the MEMS sensor 53.
  • the second silicon substrate 51 is used as the ASIC 55, it is not necessary to provide an ASIC separately from the second silicon substrate 51, the number of components can be reduced, and the semiconductor device 50 can be reduced. Downsizing (low profile) can be promoted.
  • FIG. 7 shows a semiconductor device 60 of the third embodiment.
  • a second silicon substrate 51 for a MEMS sensor or an ASIC 55 for a magnetic sensor and a MEMS sensor
  • a printed circuit board 2 composed of a glass epoxy substrate via a third die bond resin 54.
  • a MEMS sensor 61 is laminated on the first die bond resin 5.
  • the MEMS sensor 61 is simply illustrated, but for example, has the same configuration as the MEMS sensor 53 illustrated in FIG. 6.
  • the MEMS sensor 63 is further laminated on the MEMS sensor 61 via the fourth die bond resin 62.
  • the first silicon substrate 11 is laminated on the MEMS sensor 63 via the second die bond resin 9.
  • the second silicon substrate 51, the MEMS sensors 61 and 63, the first silicon substrate 11 (magnetic sensor ASIC 12), the side surfaces of the magnetic sensor 4, and the magnetic sensor 4 are used as a sealing material.
  • a mold resin 20 is provided.
  • Each die bond resin 5, 9, 54, 62 is a softer material than the mold resin 20.
  • the upper and lower sides of the MEMS sensors 61 and 63 are sandwiched between the first silicon substrate 11 and the second silicon substrate 51 via a soft die bond resin. Thereby, the influence of the thermal stress with respect to the MEMS sensor 53 can be relieved more effectively.
  • the MEMS sensors 61 and 63 may be of the same type or different.
  • the MEMS sensors 61 and 63 are both acceleration sensors, but the MEMS sensor 61 and the MEMS sensor 63 may have different acceleration detection directions.
  • the MEMS sensor 61 and the MEMS sensor 63 can be configured as different MEMS sensors such as an acceleration sensor, a gyroscope, and an atmospheric pressure sensor.
  • FIG. 8 shows a semiconductor device 70 according to the fourth embodiment.
  • a second silicon substrate 51 (for a MEMS sensor, or an ASIC 55 for a magnetic sensor and a MEMS sensor) is laminated on a printed circuit board 2 composed of a glass epoxy substrate via a third die bond resin 54.
  • a plurality of MEMS sensors 71, 72 are arranged side by side via the first die bond resin 5.
  • a first silicon substrate 11 is laminated on each MEMS sensor 71, 72 via a second die bond resin 9.
  • Each first silicon substrate 11 can be configured as a magnetic sensor ASIC 12, and the magnetic sensor 4 is provided on each magnetic sensor ASIC.
  • a mold resin 20 is provided as a stopper.
  • Each die bond resin 5, 9, 54 is a softer material than the mold resin 20.
  • the upper and lower sides of the MEMS sensors 71 and 72 are sandwiched between the first silicon substrate 11 and the second silicon substrate 51 via a soft die bond resin. Thereby, the influence of the thermal stress with respect to the MEMS sensors 71 and 72 can be relieved more effectively.
  • a plurality of MEMS sensors 71 and 72 are arranged side by side on a common ASIC 55.
  • the MEMS sensors 71 and 72 may be of the same type or different.
  • the first silicon substrate 11 is laminated on the upper surfaces of the MEMS sensors 71 and 72 arranged side by side through the die bond resin 9.
  • the first silicon substrate 11 is provided on the upper surface of each MEMS sensor 71, 72, but a common first silicon substrate 11 may be disposed on the upper surface of each MEMS sensor 71, 72. It is.
  • FIG. 9 shows a semiconductor device 80 of the fifth embodiment.
  • a second silicon substrate 51 for a MEMS sensor, or an ASIC 55 for a magnetic sensor and a MEMS sensor
  • the MEMS sensor 81 is arranged in parallel on the first die bond resin 5.
  • a first silicon substrate 82 is laminated on the MEMS sensor 81 with a second die bond resin 9 interposed therebetween.
  • a mold resin 20 as a sealing material is provided from the printed circuit board 2 to the second silicon substrate 51, the MEMS sensor 81, the side surfaces of the first silicon substrate 11, and the first silicon substrate 11. .
  • Each die bond resin 5, 9, 54 is a softer material than the mold resin 20.
  • the upper and lower sides of the MEMS sensor 81 are sandwiched between the first silicon substrate 11 and the second silicon substrate 51 via a soft die bond resin. Thereby, the influence of the thermal stress with respect to the MEMS sensor 81 can be relieved more effectively.
  • the first silicon substrate 11 is not a magnetic sensor ASIC but a simple silicon substrate. Therefore, the semiconductor device 80 shown in FIG. 9 is not provided with a magnetic sensor. Although the magnetic sensor is not arranged in FIG. 9, the first silicon substrate 11 is arranged on the upper surface of the MEMS sensor 81 via a die bond resin in order to relieve the thermal stress on the MEMS sensor 81.
  • a semiconductor device 90 shown in FIG. 10 was produced.
  • the configuration is basically the same as that of the semiconductor device 1 shown in FIG. That is, the MEMS sensor 3 is laminated on the upper surface of the printed board 2 made of a glass epoxy substrate via a die bond resin (not shown), and the first silicon substrate 11 is placed on the MEMS sensor 3 via a die bond resin (not shown). Were laminated. Further, the magnetic sensor 4 was disposed on the first silicon substrate 11. Further, the periphery was sealed with a mold resin 20.
  • the semiconductor device 90 in FIG. 10 is used for the simulation experiment.
  • the MEMS sensor and the printed circuit board include not only a silicon substrate but also an insulating layer and a metal bonding layer. In this experiment, it was assumed that the silicon substrate was formed.
  • the Young's modulus of the mold resin 20 was set to 20 GPa. Then, the Young's modulus of the die bond resin was changed to 0.6 GPa, 2.8 GPa, 9 GPa, and 200 GPa, and the offset amount of the MEMS sensor 3 at that time was examined.
  • the offset amount indicates the amount of change in the detected value obtained from the MEMS sensor 3 when a heat treatment of ⁇ 60 ° C. is performed on the normal temperature (25 ° C.). Therefore, the offset amount is preferably zero.
  • the functional layer 8 of the MEMS sensor 3 has, for example, the structure of a triaxial acceleration sensor similar to that shown in FIG. 4A, and how the offset amount of the acceleration of each axis changes with respect to the Young's modulus of the die bond resin. I investigated. The experimental results are shown in FIG.
  • the Young's modulus of the die bond resin is increased to 200 GPa, the offset amount of acceleration in any of the X axis, the Y axis, and the Z axis becomes very large and deteriorates.
  • the Young's modulus of the mold resin 20 is 20 GPa, if the Young's modulus of the die bond resin is 0.6 GPa to 9 GPa, which is smaller than the Young's modulus of the mold resin, the die bond resin can be made softer than the mold resin 20 and offset. It was found that the amount could be reduced.
  • Second silicon substrate 1, 50, 60, 70, 80 Semiconductor device 2 Printed circuit board 3, 53, 61, 63, 71, 72, 81 MEMS sensor 4, 4a, 4b Magnetic sensor 5 First die bond resin 6 First sensor substrate 7, 52 Second sensor substrate 8 Functional layer 9 Second die bond resin 11 First silicon substrate 16 Y-axis magnetic sensor 17 Z-axis magnetic sensor 18 X-axis magnetic sensor 20 Mold resin 29 Insulating layer 30 Metal bonding layers 41 to 43 Movable Body 45 Wiring layer 51 Second silicon substrate 54 Third die bond resin

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Micromachines (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteurs permettant une réduction sans précédent de l'impact de la contrainte thermique, en particulier sur un capteur MEMS. La présente invention est caractérisée en ce qu'elle comprend : un capteur MEMS (3) principalement composé de silicium disposé en couche sur un substrat imprimé (2) (substrat de support) comprenant une première résine de fixation de puce (5) interposée entre eux ; un premier substrat de silicium (11) (capteur magnétique ASIC) disposé en couche sur le capteur MEMS (3) comprenant une seconde résine de fixation de puce (9) interposée entre eux ; et une résine moulée (20) servant de joint ; les résines de fixation (5, 9) étant formées de matériaux plus souples que la résine moulée (20).
PCT/JP2013/073814 2012-09-13 2013-09-04 Dispositif à semi-conducteurs WO2014042055A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014535505A JP5859133B2 (ja) 2012-09-13 2013-09-04 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-201037 2012-09-13
JP2012201037 2012-09-13

Publications (1)

Publication Number Publication Date
WO2014042055A1 true WO2014042055A1 (fr) 2014-03-20

Family

ID=50278169

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2013/073814 WO2014042055A1 (fr) 2012-09-13 2013-09-04 Dispositif à semi-conducteurs

Country Status (2)

Country Link
JP (1) JP5859133B2 (fr)
WO (1) WO2014042055A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018017717A (ja) * 2016-07-15 2018-02-01 Tdk株式会社 センサユニット
US11282808B2 (en) 2019-04-26 2022-03-22 Seiko Epson Corporation Inertial sensor, electronic instrument, vehicle, and method for manufacturing inertial sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019128304A (ja) * 2018-01-26 2019-08-01 セイコーエプソン株式会社 物理量センサー、慣性計測ユニット、電子機器、携帯型電子機器、および移動体

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214177A (ja) * 1999-01-27 2000-08-04 Mitsubishi Electric Corp 半導体加速度センサ及びその製造方法
JP2004132792A (ja) * 2002-10-09 2004-04-30 Toyota Motor Corp センサユニットの構造
WO2007020701A1 (fr) * 2005-08-18 2007-02-22 C & N Inc Capteur d'accélération
JP2009063550A (ja) * 2007-09-10 2009-03-26 Rohm Co Ltd 半導体センサ装置
JP2010073765A (ja) * 2008-09-17 2010-04-02 Renesas Technology Corp 半導体装置およびその製造方法
WO2012124282A1 (fr) * 2011-03-11 2012-09-20 パナソニック株式会社 Capteur

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4766087B2 (ja) * 2007-12-14 2011-09-07 株式会社デンソー 電子装置
JP6136101B2 (ja) * 2012-04-10 2017-05-31 日立化成株式会社 感光性樹脂組成物、フィルム状樹脂、樹脂シート、樹脂パターン、樹脂層付半導体ウェハ、樹脂層付透明基板、半導体装置及び半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000214177A (ja) * 1999-01-27 2000-08-04 Mitsubishi Electric Corp 半導体加速度センサ及びその製造方法
JP2004132792A (ja) * 2002-10-09 2004-04-30 Toyota Motor Corp センサユニットの構造
WO2007020701A1 (fr) * 2005-08-18 2007-02-22 C & N Inc Capteur d'accélération
JP2009063550A (ja) * 2007-09-10 2009-03-26 Rohm Co Ltd 半導体センサ装置
JP2010073765A (ja) * 2008-09-17 2010-04-02 Renesas Technology Corp 半導体装置およびその製造方法
WO2012124282A1 (fr) * 2011-03-11 2012-09-20 パナソニック株式会社 Capteur

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018017717A (ja) * 2016-07-15 2018-02-01 Tdk株式会社 センサユニット
US11282808B2 (en) 2019-04-26 2022-03-22 Seiko Epson Corporation Inertial sensor, electronic instrument, vehicle, and method for manufacturing inertial sensor

Also Published As

Publication number Publication date
JPWO2014042055A1 (ja) 2016-08-18
JP5859133B2 (ja) 2016-02-10

Similar Documents

Publication Publication Date Title
JP4238724B2 (ja) 半導体装置
JP4165360B2 (ja) 力学量センサ
JP5486271B2 (ja) 加速度センサ、及び加速度センサの製造方法
JP4973443B2 (ja) センサ装置
JP4766143B2 (ja) 半導体装置およびその製造方法
JP2006275660A (ja) 半導体センサおよびその製造方法
JP6209270B2 (ja) 加速度センサ
JP2004333133A (ja) 慣性力センサ
JP5859133B2 (ja) 半導体装置
JP2005127750A (ja) 半導体センサおよびその製造方法
KR101573367B1 (ko) 압저항형 세라믹 압력센서
JP4715503B2 (ja) センサモジュールの製造方法
JP5343678B2 (ja) 半導体装置およびその製造方法
JP2008082952A (ja) 半導体感歪センサ
JP4706634B2 (ja) 半導体センサおよびその製造方法
JP2010008172A (ja) 半導体装置
JP2007192792A (ja) センサエレメント
JP5328492B2 (ja) 圧力センサモジュール及び圧力センサパッケージ、並びにこれらの製造方法
JP5328493B2 (ja) 圧力センサモジュール及び圧力センサパッケージ、並びにこれらの製造方法
JP2006300905A (ja) 加速度センサおよびその製造方法
JP4925273B2 (ja) 半導体装置
JP5328479B2 (ja) 圧力センサモジュール及び圧力センサパッケージ、並びにこれらの製造方法
JP2009047650A (ja) センサ装置およびその製造方法
JP2014128842A (ja) Ｍｅｍｓ素子を有する半導体パッケージ
JP2011017557A (ja) 力学量センサ

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 13837790

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2014535505

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 13837790

Country of ref document: EP

Kind code of ref document: A1