WO2014010328A1 - 銅被膜形成剤及び銅被膜の形成方法 - Google Patents
銅被膜形成剤及び銅被膜の形成方法 Download PDFInfo
- Publication number
- WO2014010328A1 WO2014010328A1 PCT/JP2013/065108 JP2013065108W WO2014010328A1 WO 2014010328 A1 WO2014010328 A1 WO 2014010328A1 JP 2013065108 W JP2013065108 W JP 2013065108W WO 2014010328 A1 WO2014010328 A1 WO 2014010328A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- carbon atoms
- coating
- copper film
- branched
- Prior art date
Links
- 239000010949 copper Substances 0.000 title claims abstract description 205
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 186
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 186
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims description 88
- -1 nitrogen-containing heterocyclic compound Chemical class 0.000 claims abstract description 75
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 65
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 45
- 150000004699 copper complex Chemical class 0.000 claims abstract description 17
- 125000001424 substituent group Chemical group 0.000 claims abstract description 15
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims description 64
- 239000011248 coating agent Substances 0.000 claims description 51
- 229910052799 carbon Inorganic materials 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 34
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 28
- 150000001721 carbon Chemical group 0.000 claims description 27
- 229930195733 hydrocarbon Natural products 0.000 claims description 27
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 26
- 239000004215 Carbon black (E152) Substances 0.000 claims description 25
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 25
- 125000000623 heterocyclic group Chemical group 0.000 claims description 24
- 150000002430 hydrocarbons Chemical class 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 14
- 238000011282 treatment Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 9
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 8
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 7
- 239000011261 inert gas Substances 0.000 claims description 7
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 claims description 5
- MCMFEZDRQOJKMN-UHFFFAOYSA-N 1-butylimidazole Chemical compound CCCCN1C=CN=C1 MCMFEZDRQOJKMN-UHFFFAOYSA-N 0.000 claims description 5
- IWDFHWZHHOSSGR-UHFFFAOYSA-N 1-ethylimidazole Chemical compound CCN1C=CN=C1 IWDFHWZHHOSSGR-UHFFFAOYSA-N 0.000 claims description 5
- OSSNTDFYBPYIEC-UHFFFAOYSA-N 1-ethenylimidazole Chemical compound C=CN1C=CN=C1 OSSNTDFYBPYIEC-UHFFFAOYSA-N 0.000 claims description 4
- NYYVCPHBKQYINK-UHFFFAOYSA-N 1-ethyl-2-methylimidazole Chemical compound CCN1C=CN=C1C NYYVCPHBKQYINK-UHFFFAOYSA-N 0.000 claims description 4
- UPYVYJSWGZMBOU-UHFFFAOYSA-N 1-pentylimidazole Chemical compound CCCCCN1C=CN=C1 UPYVYJSWGZMBOU-UHFFFAOYSA-N 0.000 claims description 4
- XLXCHZCQTCBUOX-UHFFFAOYSA-N 1-prop-2-enylimidazole Chemical compound C=CCN1C=CN=C1 XLXCHZCQTCBUOX-UHFFFAOYSA-N 0.000 claims description 4
- IPIORGCOGQZEHO-UHFFFAOYSA-N 1-propan-2-ylimidazole Chemical compound CC(C)N1C=CN=C1 IPIORGCOGQZEHO-UHFFFAOYSA-N 0.000 claims description 4
- UINDRJHZBAGQFD-UHFFFAOYSA-N 2-ethyl-1-methylimidazole Chemical compound CCC1=NC=CN1C UINDRJHZBAGQFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000004183 alkoxy alkyl group Chemical group 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000000304 alkynyl group Chemical group 0.000 claims description 3
- 125000004429 atom Chemical group 0.000 claims description 3
- 238000007766 curtain coating Methods 0.000 claims description 3
- 238000007646 gravure printing Methods 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 3
- 238000007645 offset printing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000010345 tape casting Methods 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 claims 1
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 description 43
- 239000000126 substance Substances 0.000 description 17
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- 239000002904 solvent Substances 0.000 description 14
- 239000000203 mixture Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000005660 hydrophilic surface Effects 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 5
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000000123 paper Substances 0.000 description 4
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 4
- IYVYLVCVXXCYRI-UHFFFAOYSA-N 1-propylimidazole Chemical compound CCCN1C=CN=C1 IYVYLVCVXXCYRI-UHFFFAOYSA-N 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- LSIWWRSSSOYIMS-UHFFFAOYSA-L copper;diformate;tetrahydrate Chemical compound O.O.O.O.[Cu+2].[O-]C=O.[O-]C=O LSIWWRSSSOYIMS-UHFFFAOYSA-L 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- 150000002460 imidazoles Chemical class 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 150000003512 tertiary amines Chemical class 0.000 description 3
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- ZFSNOLDEVKLWKV-UHFFFAOYSA-N 1-butylimidazole copper Chemical compound [Cu].C(CCC)N1C=NC=C1 ZFSNOLDEVKLWKV-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- MWZDIEIXRBWPLG-UHFFFAOYSA-N 1-methyl-1,2,4-triazole Chemical compound CN1C=NC=N1 MWZDIEIXRBWPLG-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 2
- QCMHUGYTOGXZIW-UHFFFAOYSA-N 3-(dimethylamino)propane-1,2-diol Chemical compound CN(C)CC(O)CO QCMHUGYTOGXZIW-UHFFFAOYSA-N 0.000 description 2
- XQABVLBGNWBWIV-UHFFFAOYSA-N 4-methoxypyridine Chemical compound COC1=CC=NC=C1 XQABVLBGNWBWIV-UHFFFAOYSA-N 0.000 description 2
- FKNQCJSGGFJEIZ-UHFFFAOYSA-N 4-methylpyridine Chemical compound CC1=CC=NC=C1 FKNQCJSGGFJEIZ-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 229910021536 Zeolite Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- BESJRHHIPGWPTC-UHFFFAOYSA-N azane;copper Chemical compound N.[Cu] BESJRHHIPGWPTC-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 150000001879 copper Chemical class 0.000 description 2
- YLSLKTLTRFELTN-UHFFFAOYSA-N copper 1,2-dimethylimidazole Chemical compound [Cu].CN1C(=NC=C1)C YLSLKTLTRFELTN-UHFFFAOYSA-N 0.000 description 2
- CSVSDVCTHNBNKK-UHFFFAOYSA-N copper 1-ethylimidazole Chemical compound [Cu].C(C)N1C=NC=C1 CSVSDVCTHNBNKK-UHFFFAOYSA-N 0.000 description 2
- LVXHYXVZBSILJU-UHFFFAOYSA-N copper 1-methylimidazole Chemical compound CN1C=NC=C1.[Cu] LVXHYXVZBSILJU-UHFFFAOYSA-N 0.000 description 2
- JGXSEQDRNWPAAZ-UHFFFAOYSA-N copper 5-methyl-1H-imidazole Chemical compound [Cu].CC=1N=CNC1 JGXSEQDRNWPAAZ-UHFFFAOYSA-N 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- OLQDGRQSFFQIIZ-UHFFFAOYSA-N copper;1h-imidazole Chemical compound [Cu].C1=CNC=N1 OLQDGRQSFFQIIZ-UHFFFAOYSA-N 0.000 description 2
- JARQOFMRMQNEOU-UHFFFAOYSA-N copper;2-methyl-1h-imidazole Chemical compound [Cu].CC1=NC=CN1 JARQOFMRMQNEOU-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 2
- ZOCHHNOQQHDWHG-UHFFFAOYSA-N hexan-3-ol Chemical compound CCCC(O)CC ZOCHHNOQQHDWHG-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 239000010985 leather Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 2
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 2
- AQIXEPGDORPWBJ-UHFFFAOYSA-N pentan-3-ol Chemical compound CCC(O)CC AQIXEPGDORPWBJ-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 150000003141 primary amines Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000003217 pyrazoles Chemical class 0.000 description 2
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical compound C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 150000003335 secondary amines Chemical class 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 150000004685 tetrahydrates Chemical class 0.000 description 2
- 239000010457 zeolite Substances 0.000 description 2
- WLUJHMKCLOIRSK-UHFFFAOYSA-N 1,2,4,5-tetramethylimidazole Chemical compound CC=1N=C(C)N(C)C=1C WLUJHMKCLOIRSK-UHFFFAOYSA-N 0.000 description 1
- AGMJWUBJIPQHBM-UHFFFAOYSA-N 1,2,4-trimethylimidazole Chemical compound CC1=CN(C)C(C)=N1 AGMJWUBJIPQHBM-UHFFFAOYSA-N 0.000 description 1
- RDTIFYBSPQERAS-UHFFFAOYSA-N 1,4,5-trimethylimidazole Chemical compound CC=1N=CN(C)C=1C RDTIFYBSPQERAS-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- BLHTXORQJNCSII-UHFFFAOYSA-N 1,4-dimethylimidazole Chemical compound CC1=CN(C)C=N1 BLHTXORQJNCSII-UHFFFAOYSA-N 0.000 description 1
- KCEYXFBJPMGIMW-UHFFFAOYSA-N 1-(2-methylbutan-2-yl)imidazole Chemical compound CCC(C)(C)N1C=CN=C1 KCEYXFBJPMGIMW-UHFFFAOYSA-N 0.000 description 1
- VNGVXQZJLFNBAF-UHFFFAOYSA-N 1-(2-methylbutyl)imidazole Chemical compound CCC(C)CN1C=CN=C1 VNGVXQZJLFNBAF-UHFFFAOYSA-N 0.000 description 1
- NPOZBHCPELPGKW-UHFFFAOYSA-N 1-(2-methylpropyl)imidazole Chemical compound CC(C)CN1C=CN=C1 NPOZBHCPELPGKW-UHFFFAOYSA-N 0.000 description 1
- CECNZZAKLLEZQO-UHFFFAOYSA-N 1-(3-methylbutyl)imidazole Chemical compound CC(C)CCN1C=CN=C1 CECNZZAKLLEZQO-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- FBHPRUXJQNWTEW-UHFFFAOYSA-N 1-benzyl-2-methylimidazole Chemical compound CC1=NC=CN1CC1=CC=CC=C1 FBHPRUXJQNWTEW-UHFFFAOYSA-N 0.000 description 1
- OKFLUOFUUVVSNJ-UHFFFAOYSA-N 1-butan-2-yl-2-methylimidazole Chemical compound CCC(C)N1C=CN=C1C OKFLUOFUUVVSNJ-UHFFFAOYSA-N 0.000 description 1
- GYKNBGLKLKMMJO-UHFFFAOYSA-N 1-butan-2-ylimidazole Chemical compound CCC(C)N1C=CN=C1 GYKNBGLKLKMMJO-UHFFFAOYSA-N 0.000 description 1
- NSGZEKTXHYHICN-UHFFFAOYSA-N 1-butyl-1,2,4-triazole Chemical compound CCCCN1C=NC=N1 NSGZEKTXHYHICN-UHFFFAOYSA-N 0.000 description 1
- WHLZPGRDRYCVRQ-UHFFFAOYSA-N 1-butyl-2-methylimidazole Chemical compound CCCCN1C=CN=C1C WHLZPGRDRYCVRQ-UHFFFAOYSA-N 0.000 description 1
- FMPJPCHSXGNEMD-UHFFFAOYSA-N 1-butylpyrazole Chemical compound CCCCN1C=CC=N1 FMPJPCHSXGNEMD-UHFFFAOYSA-N 0.000 description 1
- WVKQECDSKDGQDQ-UHFFFAOYSA-N 1-butyltriazole Chemical compound CCCCN1C=CN=N1 WVKQECDSKDGQDQ-UHFFFAOYSA-N 0.000 description 1
- FEOIYPLRWRCSMS-UHFFFAOYSA-N 1-ethyl-1,2,4-triazole Chemical compound CCN1C=NC=N1 FEOIYPLRWRCSMS-UHFFFAOYSA-N 0.000 description 1
- FLNMQGISZVYIIK-UHFFFAOYSA-N 1-ethylpyrazole Chemical compound CCN1C=CC=N1 FLNMQGISZVYIIK-UHFFFAOYSA-N 0.000 description 1
- ALNWCYLRUYXLCD-UHFFFAOYSA-N 1-ethyltriazole Chemical compound CCN1C=CN=N1 ALNWCYLRUYXLCD-UHFFFAOYSA-N 0.000 description 1
- KGWVFQAPOGAVRF-UHFFFAOYSA-N 1-hexylimidazole Chemical compound CCCCCCN1C=CN=C1 KGWVFQAPOGAVRF-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- FGYADSCZTQOAFK-UHFFFAOYSA-N 1-methylbenzimidazole Chemical compound C1=CC=C2N(C)C=NC2=C1 FGYADSCZTQOAFK-UHFFFAOYSA-N 0.000 description 1
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 description 1
- JWAWEQBUZOGIBZ-UHFFFAOYSA-N 1-methyltriazole Chemical compound CN1C=CN=N1 JWAWEQBUZOGIBZ-UHFFFAOYSA-N 0.000 description 1
- KLMZKZJCMDOKFE-UHFFFAOYSA-N 1-octylimidazole Chemical compound CCCCCCCCN1C=CN=C1 KLMZKZJCMDOKFE-UHFFFAOYSA-N 0.000 description 1
- SXFYHZHOCPBCPV-UHFFFAOYSA-N 1-pentan-2-ylimidazole Chemical compound CCCC(C)N1C=CN=C1 SXFYHZHOCPBCPV-UHFFFAOYSA-N 0.000 description 1
- FIWJUOJDXBGMJK-UHFFFAOYSA-N 1-pentan-3-ylimidazole Chemical compound CCC(CC)N1C=CN=C1 FIWJUOJDXBGMJK-UHFFFAOYSA-N 0.000 description 1
- GEPBNSNQBGDCTO-UHFFFAOYSA-N 1-pentylpyrazole Chemical compound CCCCCN1C=CC=N1 GEPBNSNQBGDCTO-UHFFFAOYSA-N 0.000 description 1
- RDTUDLGSHURRHY-UHFFFAOYSA-N 1-propan-2-yl-1,2,4-triazole Chemical compound CC(C)N1C=NC=N1 RDTUDLGSHURRHY-UHFFFAOYSA-N 0.000 description 1
- ANMVTDVBEDVFRB-UHFFFAOYSA-N 1-propan-2-ylpyrazole Chemical compound CC(C)N1C=CC=N1 ANMVTDVBEDVFRB-UHFFFAOYSA-N 0.000 description 1
- BSGWGQQMKGFUPS-UHFFFAOYSA-N 1-propan-2-yltriazole Chemical compound CC(C)N1C=CN=N1 BSGWGQQMKGFUPS-UHFFFAOYSA-N 0.000 description 1
- CUOVNMDNRAZFDH-UHFFFAOYSA-N 1-propyl-1,2,4-triazole Chemical compound CCCN1C=NC=N1 CUOVNMDNRAZFDH-UHFFFAOYSA-N 0.000 description 1
- BDMFEFZOOOYCKN-UHFFFAOYSA-N 1-propylpyrazole Chemical compound CCCN1C=CC=N1 BDMFEFZOOOYCKN-UHFFFAOYSA-N 0.000 description 1
- VAUFFDKLUVJZTG-UHFFFAOYSA-N 1-propyltriazole Chemical compound CCCN1C=CN=N1 VAUFFDKLUVJZTG-UHFFFAOYSA-N 0.000 description 1
- GQXYWNIQPPUOEU-UHFFFAOYSA-N 1-tert-butyl-2-methylimidazole Chemical compound CC1=NC=CN1C(C)(C)C GQXYWNIQPPUOEU-UHFFFAOYSA-N 0.000 description 1
- AMQKPABOPFXDQM-UHFFFAOYSA-N 1-tert-butylimidazole Chemical compound CC(C)(C)N1C=CN=C1 AMQKPABOPFXDQM-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-LURJTMIESA-N 2-Hexanol Natural products CCCC[C@H](C)O QNVRIHYSUZMSGM-LURJTMIESA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- 229940093475 2-ethoxyethanol Drugs 0.000 description 1
- MBDOPTWQHZAAQS-UHFFFAOYSA-N 2-ethyl-1-hexyl-4-methylimidazole Chemical compound CCCCCCN1C=C(C)N=C1CC MBDOPTWQHZAAQS-UHFFFAOYSA-N 0.000 description 1
- SVNWKKJQEFIURY-UHFFFAOYSA-N 2-methyl-1-(2-methylpropyl)imidazole Chemical compound CC(C)CN1C=CN=C1C SVNWKKJQEFIURY-UHFFFAOYSA-N 0.000 description 1
- GDRRCHJTUJBMQA-UHFFFAOYSA-N 2-methyl-1-propan-2-ylimidazole Chemical compound CC(C)N1C=CN=C1C GDRRCHJTUJBMQA-UHFFFAOYSA-N 0.000 description 1
- SIQHSJOKAUDDLN-UHFFFAOYSA-N 2-methyl-1-propylimidazole Chemical compound CCCN1C=CN=C1C SIQHSJOKAUDDLN-UHFFFAOYSA-N 0.000 description 1
- LWMDPZVQAMQFOC-UHFFFAOYSA-N 4-butylpyridine Chemical compound CCCCC1=CC=NC=C1 LWMDPZVQAMQFOC-UHFFFAOYSA-N 0.000 description 1
- VJXRKZJMGVSXPX-UHFFFAOYSA-N 4-ethylpyridine Chemical compound CCC1=CC=NC=C1 VJXRKZJMGVSXPX-UHFFFAOYSA-N 0.000 description 1
- ABJVUPUJUGBUMM-UHFFFAOYSA-N 4-pentylpyridine Chemical compound CCCCCC1=CC=NC=C1 ABJVUPUJUGBUMM-UHFFFAOYSA-N 0.000 description 1
- JAWZAONCXMJLFT-UHFFFAOYSA-N 4-propylpyridine Chemical compound CCCC1=CC=NC=C1 JAWZAONCXMJLFT-UHFFFAOYSA-N 0.000 description 1
- 125000002373 5 membered heterocyclic group Chemical group 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- 125000004070 6 membered heterocyclic group Chemical group 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000012691 Cu precursor Substances 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- UQFQONCQIQEYPJ-UHFFFAOYSA-N N-methylpyrazole Chemical compound CN1C=CC=N1 UQFQONCQIQEYPJ-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003113 alkalizing effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- RVZWLDHPABBMQS-UHFFFAOYSA-N copper 3-(dimethylamino)propane-1,2-diol Chemical compound [Cu].CN(CC(CO)O)C RVZWLDHPABBMQS-UHFFFAOYSA-N 0.000 description 1
- 229940116318 copper carbonate Drugs 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- XCIXKGXIYUWCLL-UHFFFAOYSA-N cyclopentanol Chemical compound OC1CCCC1 XCIXKGXIYUWCLL-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 150000004683 dihydrates Chemical class 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 238000010559 graft polymerization reaction Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 230000005661 hydrophobic surface Effects 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- JMANUKZDKDKBJP-UHFFFAOYSA-N imidazo[1,5-a]pyridine Chemical compound C1=CC=CC2=CN=CN21 JMANUKZDKDKBJP-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- QQZOPKMRPOGIEB-UHFFFAOYSA-N n-butyl methyl ketone Natural products CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/18—Processes for applying liquids or other fluent materials performed by dipping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/28—Processes for applying liquids or other fluent materials performed by transfer from the surfaces of elements carrying the liquid or other fluent material, e.g. brushes, pads, rollers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/30—Processes for applying liquids or other fluent materials performed by gravity only, i.e. flow coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/30—Processes for applying liquids or other fluent materials performed by gravity only, i.e. flow coating
- B05D1/305—Curtain coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
- B05D1/42—Distributing applied liquids or other fluent materials by members moving relatively to surface by non-rotary members
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
- B05D3/0254—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/14—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
- C07F1/08—Copper compounds
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/08—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
- C23C30/005—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process on hard metal substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
Definitions
- the present invention relates to a copper film forming agent and a method for forming a copper film.
- Copper is widely used as a wiring material because it has the second highest conductivity after silver among all metals and is inexpensive.
- a technique for forming a circuit by forming a copper layer on a substrate and removing unnecessary copper portions by etching has been used for a long time.
- this method has a problem in that the number of treatment steps is large and the treatment of the etching waste liquid is required, so that the cost is increased and the environmental load is increased.
- metal particles are bonded to each other as if they are melted by heating at a relatively low temperature by reducing the size of the metal particles to the nano level.
- a technique has been developed in which copper particles are bonded to each other by firing to form a circuit, and the resin binder remaining in the conductor after circuit formation is reduced.
- this method has a problem that the manufacturing cost is high because the copper particles must be processed to a nano-level size.
- a method of forming a circuit by printing a wiring pattern using a copper composition that deposits copper by pyrolysis and depositing copper by heating is proposed.
- the manufacturing cost can be suppressed.
- the resin binder which remains in a conductor after circuit formation can be reduced, favorable electroconductivity can be obtained.
- the copper coating formed using such a technique has little or almost no resin binder that contributes to adhesion with the substrate, adhesion with the substrate is exclusively on the surface of copper and the substrate surface. Secured by direct interaction. Since copper is inherently hydrophilic and adhesion is not ensured on a hydrophobic surface, it is desirable that the substrate surface be hydrophilic. Therefore, a composition intended for use in this application is required to have excellent affinity with a hydrophilic surface.
- copper can be deposited at a lower temperature, specifically, copper can be applied at a temperature of 130 ° C. or lower, which can be applied to a polyethylene terephthalate film. It is required to be able to precipitate.
- Patent Document 1 discloses that by heating a composition comprising two formate ions coordinated to copper and copper, and two C9 to C20 alkylimidazoles coordinated to copper via nitrogen, A method of depositing copper is disclosed. However, there is no mention of adhesion to the substrate and pattern formation, and no description is given regarding circuit formation technology. In addition, this composition is intended for use in supercritical fluids such as supercritical carbon dioxide, and is not shown for use under normal pressure. In addition, it is highly hydrophobic, so it can form copper films on hydrophilic surfaces. Is not suitable. Patent Document 2 discloses a method of depositing a copper film by heating a mixed product composed of copper formate and alkoxyalkylamine.
- Patent Document 3 discloses a method for producing a copper film by heating a copper compound composed of copper formate and ammonia. However, copper film formation at 130 ° C. or lower is not shown.
- Patent Document 4 discloses a method for producing a copper coating by heating a copper precursor composition comprising copper formate and a propanediol compound. However, copper film formation at 130 ° C. or lower is not shown.
- Non-Patent Document 1 describes purification of a dimeric copper (II) complex with 1-methylimidazole by adding copper formate to an ethanol solution containing excess 1-methylimidazole. However, the content is a consideration regarding the chemical structure, and there is no description regarding the formation of the copper film.
- the present invention has been made in view of the above-described conventional situation, and can form a copper film at a temperature of 130 ° C. or less under normal pressure, and has excellent affinity with a hydrophilic surface and is uniform copper. It is an object to provide a copper film forming agent capable of forming a film and a method for forming a copper film.
- the present inventors have obtained a desired effect by using a copper film forming agent containing a copper complex composed of a specific nitrogen-containing heterocyclic compound and copper formate.
- the inventors have found that the above object can be achieved, and have completed the present invention.
- a copper complex comprising a 5- or 6-membered nitrogen-containing heterocyclic compound having 1 to 3 nitrogen atoms and copper formate, wherein the nitrogen-containing heterocyclic compound comprises 1 or 2
- a copper film forming agent having a ring structure, wherein the total number of carbon atoms contained in a substituent is 1 to 5, and an element other than carbon atoms in the compound is not bonded to a hydrogen atom.
- the copper film forming agent according to (1), wherein the substituent is selected from the group consisting of an alkyl group, an alkenyl group, an alkynyl group, an alkoxyl group, and an alkoxylalkyl group.
- the copper film forming agent according to (1) or (2), wherein the nitrogen-containing heterocyclic compound is an imidazole compound represented by the following formula (I).
- R 1 is a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or an element other than a carbon atom which is not bonded to a hydrocarbon having 1 to 5 carbon atoms and a hydrogen atom.
- R 2 to R 4 are each independently a hydrogen atom
- the imidazole compound represented by the formula (I) is 1-methylimidazole, 1-ethylimidazole, 1,2-dimethylimidazole, 1-ethyl-2-methylimidazole, 2-ethyl-1-methylimi
- R 5 and R 8 are each independently a straight, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or a hydrocarbon having 1 to 5 carbon atoms. And a linear, branched, or cyclic substituent containing an element other than a carbon atom that is not bonded to a hydrogen atom, or is bonded to adjacent R 7 or R 10 to form a heterocyclic ring.
- 6 and R 7 are each independently a hydrogen atom, a linear, branched or cyclic hydrocarbon group having 1 to 4 carbon atoms, or a carbon atom not bonded to a hydrocarbon having 1 to 4 carbon atoms and a hydrogen atom.
- R 9 is a hydrogen atom, C1-C4 straight chain, branched chain or cyclic hydrocarbon group, or C1-C4 hydrocarbon Straight chain comprising an element other than carbon atom which is not bonded to a hydrogen atom, a branched or cyclic substituent
- R 10 is a hydrogen atom, a straight-chain having 1 to 4 carbon atoms, branched or cyclic Or a linear, branched or cyclic substituent comprising an element other than a carbon atom not bonded to a hydrogen atom and a hydrocarbon having 1 to 4 carbon atoms, or adjacent R 8 Bonded to form a heterocyclic ring, provided that the total carbon contained in R 5 to R 7 and the total carbon contained in R 8 to R 10 are all 5 or less.
- R 11 to R 15 are each independently a hydrogen atom, a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or a hydrocarbon and hydrogen having 1 to 5 carbon atoms. Represents a linear, branched or cyclic substituent containing an element other than a carbon atom not bonded to an atom, or bonded to adjacent R 11 , R 12 , R 13 , R 14 or R 15 (A ring or a heterocyclic ring is formed, provided that the total carbon contained in R 11 to R 15 is 5 or less.) (7) The copper film forming agent according to (1) or (2), wherein the nitrogen-containing heterocyclic compound is a pyrazole compound represented by the following formula (IV).
- R 16 is a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or an element other than a carbon atom not bonded to a hydrocarbon having 1 to 5 carbon atoms and a hydrogen atom.
- (11) The method for forming a copper film according to (10), wherein the substrate surface is subjected to a hydrophilic treatment before the coating step.
- the substrate is at least one selected from the group consisting of a glass substrate, a silicon substrate, a metal substrate, a ceramic substrate, and a resin substrate.
- the coating process includes spin coating, dip coating, spray coating, mist coating, flow coating, curtain coating, roll coating, knife coating, blade coating, air doctor coating, and bar coating.
- any one of the above (10) to (15), which is performed by at least one method selected from the group consisting of a printing method, a screen printing method, a gravure printing method, a flexographic printing method, an offset printing method, and a brush coating method The formation method of the copper film as described in any one of.
- a wiring board comprising a copper film formed by the method for forming a copper film according to any one of (10) to (16).
- the copper film forming agent and the method for forming a copper film according to the present invention it is possible to form a highly uniform copper film on the hydrophilic substrate surface in a temperature range of 130 ° C. or lower under normal pressure.
- a material having low heat resistance which has not been realized in the past, in particular, a material of insulation type B (allowable maximum temperature 130 ° C.) defined in JIS C4003 in the field of electronic materials, such as polyethylene terephthalate film, etc.
- JIS C4003 a material of insulation type B (allowable maximum temperature 130 ° C.) defined in JIS C4003 in the field of electronic materials, such as polyethylene terephthalate film, etc.
- the ability to form a copper film at a low temperature means that a sufficient amount of heat can be secured at a high temperature, and shortening of the baking time and improvement in conductivity can be expected even under high-temperature baking conditions as compared with the prior art. .
- FIG. 1 is an explanatory diagram showing SEM images of the test pieces of Examples 1 to 4 and Comparative Examples 3 and 4.
- FIG. 2 is an explanatory diagram showing CCD photographed images of the test pieces of Examples 8 to 10 and Comparative Examples 6 and 7.
- the copper film-forming agent of the present invention is a 5- or 6-membered nitrogen-containing heterocyclic compound having 1 to 3 nitrogen atoms substituted with a specific substituent (hereinafter simply referred to as “the nitrogen-containing heterocyclic ring of the present invention”). And a copper complex composed of copper formate.
- the nitrogen-containing heterocyclic compound of the present invention has a 5-membered or 6-membered heterocyclic skeleton having 1 to 3 nitrogen atoms.
- the compound has one or two ring structures, the total number of carbons contained in the substituent is 1 to 5, and elements other than carbon atoms in the compound are not bonded to hydrogen atoms.
- the nitrogen-containing heterocyclic compound of the present invention in which the nitrogen-containing heterocyclic compound is substituted with a specific substituent can be coordinated to a copper ion by an unshared electron pair on nitrogen.
- the nitrogen-containing heterocyclic compound of the present invention When the nitrogen-containing heterocyclic compound of the present invention is used, it has moderate basicity and small steric hindrance, so that it can be stably coordinated to copper and is relatively stable at room temperature. A copper formate complex can be formed.
- the nitrogen-containing heterocyclic compound of the present invention like other amines, can lower the copper reduction reaction with formic acid, and after copper is deposited, it is relatively quick without binding to copper. It is possible to deposit copper which is volatilized and has excellent conductivity with little residue.
- moderate volatility is imparted, and it is possible to pass through a fluidized state in the process of copper deposition, so that a highly uniform copper coating can be obtained. The effect is obtained.
- moderate polarity is given and it is possible to maintain affinity for the hydrophilic surface even in a fluidized state, there is an effect that the hydrophilic substrate surface can be satisfactorily adhered.
- the substituent is preferably selected from the group consisting of an alkyl group, an alkenyl group, an alkynyl group, an alkoxyl group, and an alkoxylalkyl group.
- Examples of the nitrogen-containing heterocyclic compound of the present invention include imidazole compounds represented by the following formula (I).
- R 1 is a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or an element other than a carbon atom not bonded to a hydrogen atom and a hydrocarbon having 1 to 5 carbon atoms.
- R 2 to R 4 are each independently a hydrogen atom, A linear, branched or cyclic hydrocarbon group having 1 to 4 carbon atoms, or a linear or branched chain containing a hydrocarbon having 1 to 4 carbon atoms and an element other than a carbon atom not bonded to a hydrogen atom Alternatively, it represents a cyclic substituent or is bonded to adjacent R 1 , R 3 or R 4 to form a ring or heterocyclic ring, provided that the total number of carbon atoms contained in R 1 to R 4 is 5 or less .
- R 1 examples include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, vinyl group and the like.
- imidazole compound represented by the formula (I) specifically, 1-methylimidazole, 1-ethylimidazole, 1-propylimidazole, 1-isopropylimidazole, 1-butylimidazole, 1-isobutylimidazole, 1-sec-butylimidazole, 1-tert-butylimidazole, 1-pentylimidazole, 1-isopentylimidazole, 1- (2-methylbutyl) imidazole, 1- (1-methylbutyl) imidazole, 1- (1-ethylpropyl) imidazole, 1-tert-pentylimidazole, 1,2-dimethylimidazole, 1-ethyl-2-methylimidazole, 2-ethyl-1-methylimidazole, 2-methyl-1-propylimidazole, 2-methyl-1-isopropylimidazole, 1-butyl-2-methylimidazole, 1-isobutyl-2-methylimi
- Examples of the nitrogen-containing heterocyclic compound of the present invention include triazole compounds represented by the following formula (IIa) or the following formula (IIb).
- R 5 and R 8 are each independently a straight, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or a hydrocarbon having 1 to 5 carbon atoms. And a linear, branched, or cyclic substituent containing an element other than a carbon atom that is not bonded to a hydrogen atom, or is bonded to adjacent R 7 or R 10 to form a heterocyclic ring.
- 6 and R 7 are each independently a hydrogen atom, a linear, branched or cyclic hydrocarbon group having 1 to 4 carbon atoms, or a carbon atom not bonded to a hydrocarbon having 1 to 4 carbon atoms and a hydrogen atom.
- R 9 is a hydrogen atom, the number of carbon atoms 1 to 4 linear, branched or cyclic hydrocarbon groups, or hydrocarbons and hydrogen having 1 to 4 carbon atoms
- R 10 is a hydrogen atom, a straight-chain having 1 to 4 carbon atoms, branched chain or cyclic hydrocarbon Represents a hydrogen group or a linear, branched or cyclic substituent containing an element other than a carbon atom not bonded to a hydrogen atom and a hydrocarbon having 1 to 4 carbon atoms, or bonded to adjacent R 8.
- R 5 and R 8 examples include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, vinyl group and the like.
- triazole compound represented by the formula (IIa) or the formula (IIb) include 1-methyl-1,2,4-triazole, 1-ethyl-1,2,4-triazole, 1-propyl-1,2,4-triazole, 1-isopropyl-1,2,4-triazole, 1-butyl-1,2,4-triazole, 1-methyl-1,2,3-triazole, 1-ethyl-1,2,3-triazole, 1-propyl-1,2,3-triazole, 1-isopropyl-1,2,3-triazole, 1-butyl-1,2,3-triazole, Examples thereof include 1-methylbenzotriazole.
- the triazole compounds represented by the formula (IIa) or the formula (IIb) in addition to using one appropriate type, it is also possible to use a combination of different types of triazole compounds. .
- R 11 to R 15 are each independently a hydrogen atom, a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or a hydrocarbon and hydrogen having 1 to 5 carbon atoms. Represents a linear, branched or cyclic substituent containing an element other than a carbon atom not bonded to an atom, or bonded to adjacent R 11 , R 12 , R 13 , R 14 or R 15 (A ring or a heterocyclic ring is formed, provided that the total carbon contained in R 11 to R 15 is 5 or less.)
- R 11 to R 15 examples include methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl, pentyl, vinyl, methoxy, ethoxy, etc. Is mentioned.
- Specific examples of the pyridine compound represented by the formula (III) include Pyridine, 4-methylpyridine, 4-ethylpyridine, 4-propylpyridine, 4-butylpyridine, 4-pentylpyridine, Quinoline, Isoquinoline, 4-methoxypyridine and the like can be mentioned. In the practice of the present invention, it is also possible to use one pyridine compound represented by the formula (III) in combination, or a combination of different pyridine compounds.
- R 16 is a linear, branched or cyclic hydrocarbon group having 1 to 5 carbon atoms, or an element other than a carbon atom not bonded to a hydrocarbon having 1 to 5 carbon atoms and a hydrogen atom.
- each of R 17 to R 19 independently represents a hydrogen atom, a carbon number of 1 A linear, branched or cyclic hydrocarbon group having 1 to 4 carbon atoms, or a hydrocarbon having 1 to 4 carbon atoms and an element other than a carbon atom not bonded to a hydrogen atom
- R 16 , R 17 , R 18 or R 19 represents a substituent or forms a ring or a heterocyclic ring by combining with adjacent R 16 , R 17 , R 18 or R 19 , provided that the total number of carbon atoms contained in R 16 to R 19 is 5 or less. .
- R 16 examples include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, vinyl group and the like.
- Specific examples of the pyrazole compound represented by the formula (IV) include 1-methylpyrazole, 1-ethylpyrazole, 1-propylpyrazole, 1-isopropylpyrazole, 1-butylpyrazole, Examples thereof include 1-pentylpyrazole.
- an appropriate one type of pyrazole compounds represented by the formula (IV) may be used, or different types of pyrazole compounds may be used in combination.
- Examples of the nitrogen-containing heterocyclic compound of the present invention include pyridazine, pyrimidine, pyrazine having 3 nitrogen atoms, and triazine having 3 nitrogen atoms.
- the above-described compounds may be used alone or in combination of two or more.
- anhydrous copper formate (II), copper formate (II) dihydrate, copper formate (II) tetrahydrate and the like can be suitably used.
- copper oxide (II), copper oxide (I) or basic copper carbonate (II), copper acetate (II), copper oxalate (II) and other copper compounds such as one or a combination of two or more and mixed with formic acid
- a material in which copper formate is generated in the system may be used.
- the copper film forming agent of the present invention is characterized by containing the above-described nitrogen-containing heterocyclic compound of the present invention and a copper complex composed of copper formate (hereinafter referred to as “the copper complex of the present invention”).
- the copper film forming agent of the present invention is easily prepared by mixing the nitrogen-containing heterocyclic compound of the present invention, which is a raw material, and copper formate, adding a solvent as necessary, crushing as necessary, and kneading. Yes, no special compositing operations are required.
- the copper complex of this invention should just be contained in the copper film formation agent of this invention as a composition, prepare the copper complex of this invention separately, and make this into the other component which comprises a copper film formation agent.
- the raw material constituting the copper complex of the present invention and other components may be directly mixed to form the copper film forming agent of the present invention.
- the copper complex of the present invention is separately prepared, for example, copper formate is dissolved or dispersed in an appropriate amount of solvent, and the nitrogen-containing heterocyclic compound of the present invention is added thereto and stirred. Then, it can obtain by removing a solvent by vacuum distillation.
- water, methanol, ethanol and the like can be preferably used as the solvent used for preparing the copper complex of the present invention.
- the ratio of the nitrogen-containing heterocyclic compound of the present invention to copper formate in the copper film forming agent of the present invention is such that the nitrogen-containing heterocyclic compound of the present invention is equimolar or more with respect to 1 mol of copper formate.
- the nitrogen-containing heterocyclic compound of the present invention may be added to a slurry in which copper formate is dispersed in a solvent. Then, copper formate may be added to the solvent in which the nitrogen-containing heterocyclic compound of the present invention is dissolved.
- Examples of the solvent used in preparing the copper film forming agent of the present invention include water, methanol, ethanol, 1-propanol, 2-propanol, 1-butanol, 2-butanol, isobutyl alcohol, tert-butyl alcohol, 1 -Pentanol, 2-pentanol, 3-pentanol, 1-hexanol, 2-hexanol, 3-hexanol, 1-heptanol, 2-heptanol, 1-octanol, 2-octanol, 2-ethylhexanol, cyclopentanol , Cyclohexanol, 2-methoxyethanol, 2-ethoxyethanol, 2-butoxyethanol, ethylene glycol, propylene glycol, propylene glycol monomethyl ether, acetone, ethyl methyl ketone, pentane, hexane, toluene, key Ren, tetrahydrofuran, dio
- a solvent will not be specifically limited if the copper film formation agent of this invention can be made into a solution form, a dispersion liquid form, or a paste form, You may use it combining 1 type (s) or 2 or more types.
- the amount of the solvent may be a general amount, and an appropriate ratio may be determined in consideration of the viscosity and printability of the obtained copper film forming agent.
- the pulverization method is not particularly limited as long as the copper film forming agent of the present invention is not in the form of a solution as long as it can be formed into a dispersed liquid or a paste.
- fillers such as particles or powders made of copper or other metals, resins, ceramics, etc. are not damaged. Can be used.
- the copper film forming agent according to the present invention can be added with an alkalinizing agent, a metal catalyst, etc. in order to further lower the temperature at which the copper film can be formed or to shorten the time required for forming the copper film. It can be used as long as it is not impaired.
- the alkalizing agent include caustic soda, caustic potassium, ammonia, primary amine, secondary amine, tertiary amine and the like.
- the metal catalyst include silver, platinum, rhodium and palladium.
- additives such as a stabilizer, a dispersant, a viscosity modifier, a surfactant, and a pH adjuster can be used within a range not impairing the effects of the present invention.
- the method for forming a copper film according to the present invention comprises a coating process in which the copper film forming agent described above is applied onto a substrate to form a coating film, and then a heating process in which the coating film is heated and fired at normal pressure. Have.
- the substrate examples include a glass substrate, a silicon substrate, a metal substrate, a ceramic substrate, and a resin substrate.
- Resin base resin types include thermosetting resins such as polyimide resin, epoxy resin, bismaleimide / triazine resin, modified polyphenylene ether resin, ABS resin, polyamide resin, polyethylene resin, polypropylene resin, polycarbonate resin, polyethylene
- thermoplastic resins such as terephthalate resin, polyvinyl chloride resin, fluororesin, and liquid crystal polymer, or vegetable fibers such as pulp and cellulose.
- the surface of the substrate is preferably hydrophilic, and if necessary, it is preferable to perform a hydrophilic treatment before the coating step.
- a hydrophilic treatment examples include dry processes such as plasma treatment, ultraviolet treatment and ozone treatment, wet processes such as alkali treatment and acid treatment, or surface modification by graft polymerization or film coating formation.
- the conditions for these hydrophilization treatments cannot be defined unconditionally depending on the material and properties of the base material, and may be appropriately set according to them.
- spin coating method dip method, spray coating method, mist coating method, flow coating method, curtain coating method, roll coating method, knife coating method, blade coating method, air doctor coating method
- examples thereof include a bar coating method, a screen printing method, a gravure printing method, an offset printing method, a flexographic printing method, and a brush coating method.
- the atmosphere in the heating step is preferably a non-oxidizing atmosphere, and examples thereof include a reducing gas, an inert gas, and a degassing atmosphere.
- examples of the reducing atmosphere include hydrogen and formic acid
- examples of the inert gas atmosphere include helium, nitrogen, argon, and carbon dioxide.
- the heating method is not particularly limited, but a method of applying warm air or hot air to the coated surface, a method of irradiating light such as ultraviolet rays, infrared rays or visible light for a long time or instantaneously, contacting the substrate with a heated medium
- a method of exposing to a heated gas atmosphere, a method of exposing to solvent vapor, and the like is not particularly limited, but a method of applying warm air or hot air to the coated surface, a method of irradiating light such as ultraviolet rays, infrared rays or visible light for a long time or instantaneously, contacting the substrate with a heated medium.
- the heating temperature may be higher than the temperature at which the copper complex of the present invention can be decomposed in a processing atmosphere.
- a preferable heating temperature cannot be generally defined by the type of the copper complex of the present invention, the type of the solvent, the atmosphere at the time of heating, etc., and may be appropriately set according to them.
- a temperature of 150 ° C. or less is preferable, and 130 ° C. or less is more preferable.
- the lower limit is preferably at or above the temperature at which the copper complex of the present invention can be decomposed, more preferably at 100 ° C. or more.
- the heating time cannot be generally defined by the type of the copper complex of the present invention, the type of the solvent, the atmosphere at the time of heating, etc., and may be appropriately set according to them.
- the above-described formation and heating of the copper film forming agent can be repeated a plurality of times.
- the copper film forming agent of the present invention can be used to coat any article for which formation of a copper film is desired, and can form a copper film on the surface of various articles by the above-described method for forming a copper film.
- this article include wiring boards, films, boards, powders, particles, fibers such as cloth and non-woven fabric, paper, leather, models, artworks, and the like.
- the copper coating formed by the copper coating forming method described above is used as a seed layer, thereby shortening the manufacturing process and reducing the cost. Can be planned.
- One pattern having a size of 1 mm (thickness) was printed. Subsequently, the sample was placed in an oven and heated at 130 ° C. for 30 minutes in a nitrogen atmosphere at normal pressure to form a copper film, which was returned to room temperature and used as a test piece.
- the resistance value of the copper film formed on the test piece was measured using a low resistivity meter (“Loresta-GP” manufactured by Mitsubishi Chemical Analytech, AP probe).
- Examples 1 to 4 A test piece was prepared using a copper film forming agent having the composition described in Table 1, and the appearance of the obtained copper film, the measurement of the deposition temperature, the measurement of the resistance value, and the adhesion test were performed. The test results obtained were as shown in Table 1. An SEM image of the test piece is shown in FIG.
- the hydrophilic surface of the substrate is highly uniform in a temperature range of 130 ° C. or lower under normal pressure.
- a copper coating can be formed.
- the test pieces of Examples 1 to 4 had a highly uniform and dense copper film, whereas the test piece of Comparative Example 3 had an organic residue on the copper surface. In the test piece of Comparative Example 4, coarse copper particles were precipitated, and no uniform copper film was formed.
- Test Example 2 Test pieces of Examples 5 to 21 and Comparative Examples 6 to 11 were prepared by the following method and used for the following tests.
- a copper film forming agent was applied on a slide glass of 48 mm (length) ⁇ 28 mm (width) ⁇ 1.2 to 1.5 mm (thickness) in parallel with a polyimide tape having a thickness of 0.055 mm at intervals of 10 mm. After a copper film forming agent was placed on the plate, one pattern having a size of 30 mm (vertical) ⁇ 10 mm (horizontal) ⁇ 0.055 mm (thickness) was printed so that the surplus was scraped off with a plate. Subsequently, using a hot plate, it was heated at 130 ° C. for 30 minutes under a nitrogen atmosphere to form a copper film, which was returned to room temperature and used as a test piece.
- the resistance value of the copper coating formed on the test piece was measured using a low resistivity meter (“Loresta-GP” manufactured by Mitsubishi Chemical Analytech, TFP probe). However, the test piece that did not become a uniform film was judged not to function as a conductor in the first place, and was not measured.
- Examples 5 to 21 A test piece was prepared using a copper film forming agent having the composition described in Table 3, and the appearance, resistance value measurement, and adhesion test of the obtained copper film were performed. The test results obtained were as shown in Table 3. Further, FIG. 2 shows the CCD images of the test pieces of Examples 8 to 10.
- Test pieces were prepared using a copper film forming agent having the composition shown in Table 4, and the appearance, resistance value measurement, and adhesion test of the obtained copper film were performed. The test results obtained were as shown in Table 4. Moreover, the CCD picked-up image of the test piece of Comparative Examples 6 and 7 is shown in FIG.
- the hydrophilic surface of the substrate is highly uniform in a temperature range of 130 ° C. or lower under normal pressure.
- a copper coating can be formed.
- the test pieces of Comparative Examples 6 to 9 since a uniform film was not formed, it was judged that they could not function as a conductor, and the resistance value was not measured. Further, from the results of FIG. 2, the test pieces of Examples 8 to 10 were not repelled on the glass surface, and a uniform film was formed, whereas the test pieces of Comparative Examples 6 and 7 were glass surfaces. And a uniform film was not formed.
- Example 22 26 g of 1-methylimidazole was dissolved in 40 g of methanol, and 36 g of copper formate tetrahydrate was added thereto and dissolved by stirring to prepare a methanol solution of 1MZ-Cu, which was used as a copper film forming agent.
- a pulp paper cut into 30 mm square (“Kimwipe S-200” manufactured by Nippon Paper Crecia) was dipped in this, then pulled up and dried in the air. This was hung in an oven, heated at 130 ° C. for 30 minutes in a nitrogen atmosphere to form a copper film, returned to room temperature, and taken out.
- the taken out paper had a copper color, and its conductivity was confirmed using a low resistivity meter (“Loresta-GP”, TFP probe manufactured by Mitsubishi Chemical Analytech). As a result, it showed a resistance value of 6.14 ⁇ .
- Example 23 2 g of zeolite (“Boiling Stone” manufactured by Wako Pure Chemical Industries, Ltd.) was added to the copper film forming agent prepared in Example 22, and the mixture was stirred at room temperature for 1 minute. This was collected by filtration, transferred to an evaporating dish, naturally dried, placed in an oven, heated at 130 ° C. for 30 minutes in a nitrogen atmosphere, returned to room temperature, and taken out. The extracted zeolite had a brown color, and when one particle was sandwiched between testers to confirm the conductivity, a resistance value of 50 ⁇ was shown.
- zeolite “Boiling Stone” manufactured by Wako Pure Chemical Industries, Ltd.
- Example 24 A 0.125 mm thick polyethylene terephthalate film ("Lumirror S10" manufactured by Toray Industries) cut to 50 mm (vertical) x 30 mm (horizontal) is prepared, and 172 nm using a UV irradiation machine ("Mini excimer” manufactured by USHIO). The hydrophilization treatment was performed by irradiating UV light of 5 minutes. Using the copper film forming agent prepared in Example 8, a pattern having a size of 30 mm (length) ⁇ 20 mm (width) ⁇ 0.055 mm (thickness) was formed on the polyethylene terephthalate film in the same manner as in Example 8. One printed. This was heated on a hot plate at 120 ° C.
- Example 25 When electrolytic copper plating was performed on the copper coating prepared in Example 24 using a commercially available copper sulfate plating bath, a copper plating coating was formed without any problem.
- the copper film forming agent and the method for forming a copper film according to the present invention are useful as materials and means for forming conductors such as wiring and electrodes in various fields.
- conductors such as wiring and electrodes in various fields.
- a printed wiring board it can be used for RF-ID tags, NFC antennas, flat displays, solar cells, multilayer ceramic capacitors, chip resistors, flat coils, printed transistors using printed electronics, and the like.
- it is expected to be applied to a wide range of fields such as metal loading on a porous catalyst, antistatic of fibers and leather, electromagnetic wave shielding processing, decorative materials, and the like.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Chemically Coating (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
しかしながら、この方法では処理工程数が多い上にエッチング廃液の処理が必要になるため、コストがかかり環境負荷も大きくなるという問題があった。
但し、このような技術を用いて形成される銅被膜には、基材との密着に寄与する樹脂バインダーが少ない、又はほとんど含まれないため、基材との密着は専ら銅と基材表面の直接的な相互作用により確保される。銅は元来親水性であり、疎水性表面では密着が確保されないため、基材表面は親水性であることが望ましい。そのため、本用途での使用を目的とする組成物には、親水性表面との親和性に優れていることが求められている。
特許文献2には、蟻酸銅とアルコキシアルキルアミンからなる混合生成物を加熱することにより銅被膜を析出させる方法が開示されている。但し、基材との密着性に関しては記載されておらず、130℃以下での銅被膜形成は示されていない。
特許文献3には、蟻酸銅とアンモニアからなる銅化合物を加熱することにより銅被膜を製造する方法が開示されている。但し、130℃以下での銅被膜形成は示されていない。
特許文献4には、蟻酸銅とプロパンジオール化合物を配合してなる銅前駆体組成物を加熱することにより銅被膜を製造する方法が開示されている。但し、130℃以下での銅被膜形成は示されていない。
また、非特許文献1には、過剰の1-メチルイミダゾールを含有するエタノール溶液に蟻酸銅を添加することによる1-メチルイミダゾールによる二量体銅(II)錯体の精製が記載されている。但し、内容は化学的構造に関する考察であり、銅被膜の形成に関する記述は見られない。
(1)1~3個の窒素原子を有する5員又は6員の含窒素複素環式化合物と蟻酸銅からなる銅錯体を含有し、前記含窒素複素環式化合物が、1個又は2個の環構造を有し、置換基に含まれる炭素原子の総数は1~5であり、該化合物中の炭素原子以外の元素が水素原子と結合していない、銅被膜形成剤。
(2)前記置換基が、アルキル基、アルケニル基、アルキニル基、アルコキシル基及びアルコキシルアルキル基からなる群から選択される、上記(1)に記載の銅被膜形成剤。
(3)前記含窒素複素環式化合物が、下記式(I)で示されるイミダゾール化合物である、上記(1)又は(2)に記載の銅被膜形成剤。
(4)前記式(I)で示されるイミダゾール化合物が、1-メチルイミダゾール、1-エチルイミダゾール、1,2-ジメチルイミダゾール、1-エチル-2-メチルイミダゾール、2-エチル-1-メチルイミダゾール、1-プロピルイミダゾール、1-イソプロピルイミダゾール、1-ブチルイミダゾール、1-ペンチルイミダゾール、1-ビニルイミダゾール、1-アリルイミダゾールからなる群から選択される少なくとも1つである、上記(3)に記載の銅被膜形成剤。
(5)前記含窒素複素環式化合物が、下記式(IIa)又は下記式(IIb)で示されるトリアゾール化合物である、上記(1)又は(2)に記載の銅被膜形成剤。
(6)前記含窒素複素環式化合物が、下記式(III)で示されるピリジン化合物である、上記(1)又は(2)に記載の銅被膜形成剤。
(7)前記含窒素複素環式化合物が、下記式(IV)で示されるピラゾール化合物である、上記(1)又は(2)に記載の銅被膜形成剤。
(8)有機溶剤又は水を含有する、上記(1)~(7)のいずれか一つに記載の銅被膜形成剤。
(9)金属粉末を含有する、上記(1)~(8)のいずれか一つに記載の銅被膜形成剤。
(10)上記(1)~(9)のいずれか一つに記載の銅被膜形成剤を基材上に塗布して塗布膜を形成する塗布工程、及び前記塗布膜を常圧で加熱焼成する加熱工程を含む、銅被膜の形成方法。
(11)前記塗布工程の前に基材表面に親水化処理を施す、上記(10)に記載の銅被膜の形成方法。
(12)前記加熱工程が、130℃以下の温度で行われる、上記(10)又は(11)に記載の銅被膜の形成方法。
(13)前記加熱工程を不活性ガス雰囲気下で行う、上記(10)~(12)のいずれか一つに記載の銅被膜の形成方法。
(14)前記不活性ガス雰囲気が、窒素雰囲気下である、上記(13)に記載の銅被膜の形成方法。
(15)前記基材が、ガラス基材、シリコン基材、金属基材、セラミック基材及び樹脂基材からなる群から選択される少なくとも1つである、上記(10)~(14)のいずれか一つに記載の銅被膜の形成方法。
(16)前記塗布工程が、スピンコート法、ディップ法、スプレーコート法、ミストコート法、フローコート法、カーテンコート法、ロールコート法、ナイフコート法、ブレードコート法、エアードクターコート法、バーコート法、スクリーン印刷法、グラビア印刷法、フレキソ印刷法、オフセット印刷法、及び刷毛塗り法からなる群から選択される少なくとも1つの方法により行われる、上記(10)~(15)のいずれか一つに記載の銅被膜の形成方法。
(17)上記(10)~(16)のいずれか一つに記載の銅被膜の形成方法によって形成された銅被膜を備える、物品。
(18)上記(10)~(16)のいずれか一つに記載の銅被膜の形成方法によって形成された銅被膜を備える、配線基板。
(19)上記(10)~(16)のいずれか一つに記載の銅被膜の形成方法によって形成された銅被膜をシード層として用い、セミアディティブプロセス又はフルアディティブプロセスによって回路形成する、配線基板の製造方法。
(20)上記(19)に記載の製造方法により製造された、配線基板。
また、低温で銅被膜を形成可能ということは、高温では十分な熱量を確保できるということであり、高温の焼成条件においても、従来技術に比べて焼成時間の短縮や導電性の向上が期待できる。
本発明の銅被膜形成剤は、特定の置換基で置換された1~3個の窒素原子を有する5員又は6員の含窒素複素環式化合物(以下、単に「本発明の含窒素複素環式化合物」ともいう)と蟻酸銅からなる銅錯体を含有する。
しかしながら、一級アミン又は二級アミンを使用した場合には、これらのアミンが析出した銅と結合してしまうために比較的低温で還元反応が進むものの残渣が残りやすく、良好な導電性が得られ難い。また、三級アミンを使用した場合には、残渣の問題は解決されるものの、置換基による立体障害が大きいため、銅に安定に配位することができず十分な低温化効果が得られない。また、三級アミンに水酸基などの極性の置換基を導入し、キレート作用により銅に安定に配位させる試みもなされているが、揮発性が損なわれて高温の加熱が必要になったり、三級アミンの塩基性が強すぎるために常温でも還元反応が進んだりするなどの問題がある。また、ある種の金属触媒を併用することで還元反応を低温化する試みもなされているが、十分な効果は得られていない。
<イミダゾール化合物>
本発明の含窒素複素環式化合物として、下記式(I)で示されるイミダゾール化合物が挙げられる。
式(I)で示されるイミダゾール化合物としては、具体的には、
1-メチルイミダゾール、
1-エチルイミダゾール、
1-プロピルイミダゾール、
1-イソプロピルイミダゾール、
1-ブチルイミダゾール、
1-イソブチルイミダゾール、
1-sec-ブチルイミダゾール、
1-tert-ブチルイミダゾール、
1-ペンチルイミダゾール、
1-イソペンチルイミダゾール、
1-(2-メチルブチル)イミダゾール、
1-(1-メチルブチル)イミダゾール、
1-(1-エチルプロピル)イミダゾール、
1-tert-ペンチルイミダゾール、
1,2-ジメチルイミダゾール、
1-エチル-2-メチルイミダゾール、
2-エチル-1-メチルイミダゾール、
2-メチル-1-プロピルイミダゾール、
2-メチル-1-イソプロピルイミダゾール、
1-ブチル-2-メチルイミダゾール、
1-イソブチル-2-メチルイミダゾール、
1-sec-ブチル-2-メチルイミダゾール、
1-tert-ブチル-2-メチルイミダゾール、
1,4-ジメチルイミダゾール、
1,2,4-トリメチルイミダゾール、
1,4,5-トリメチルイミダゾール、
1-ビニルイミダゾール、
1-アリルイミダゾール、
1,2,4,5-テトラメチルイミダゾール、
1-メチルベンズイミダゾール、
イミダゾ[1,5-a]ピリジン
等が挙げられる。
なお、本発明の実施においては、式(I)で示されるイミダゾール化合物のうち、適宜の1種類を使用する他、種類の異なるイミダゾール化合物を組み合わせて使用することも可能である。
また、本発明の含窒素複素環式化合物として、下記式(IIa)又は下記式(IIb)で示されるトリアゾール化合物が挙げられる。
式(IIa)又は式(IIb)で示されるトリアゾール化合物の具体例としては、
1-メチル-1,2,4-トリアゾール、
1-エチル-1,2,4-トリアゾール、
1-プロピル-1,2,4-トリアゾール、
1-イソプロピル-1,2,4-トリアゾール、
1-ブチル-1,2,4-トリアゾール、
1-メチル-1,2,3-トリアゾール、
1-エチル-1,2,3-トリアゾール、
1-プロピル-1,2,3-トリアゾール、
1-イソプロピル-1,2,3-トリアゾール、
1-ブチル-1,2,3-トリアゾール、
1-メチルベンゾトリアゾール
等が挙げられる。
なお、本発明の実施においては、式(IIa)又は式(IIb)で示されるトリアゾール化合物のうち、適宜の1種類を使用する他、種類の異なるトリアゾール化合物を組み合わせて使用することも可能である。
また、本発明の含窒素複素環式化合物として、下記式(III)で示されるピリジン化合物が挙げられる。
式(III)で示されるピリジン化合物の具体例としては、
ピリジン、
4-メチルピリジン、
4-エチルピリジン、
4-プロピルピリジン、
4-ブチルピリジン、
4-ペンチルピリジン、
キノリン、
イソキノリン、
4-メトキシピリジン
等が挙げられる。
なお、本発明の実施においては、式(III)で示されるピリジン化合物のうち、適宜の1種類を使用する他、種類の異なるピリジン化合物を組み合わせて使用することも可能である。
また、本発明の含窒素複素環式化合物として、下記式(IV)で示されるピラゾール化合物が挙げられる。
式(IV)で示されるピラゾール化合物の具体例としては、
1-メチルピラゾール、
1-エチルピラゾール、
1-プロピルピラゾール、
1-イソプロピルピラゾール、
1-ブチルピラゾール、
1-ペンチルピラゾール
等が挙げられる。
なお、本発明の実施においては、式(IV)で示されるピラゾール化合物のうち、適宜の1種類を使用する他、種類の異なるピラゾール化合物を組み合わせて使用することも可能である。
また、本発明の含窒素複素環式化合物として、2個の窒素原子を有するピリダジン、ピリミジン、ピラジン、3個の窒素原子を有するトリアジン等も挙げることができる。
本発明の含窒素複素環式化合物は、上記した化合物を1種単独で用いてもよく、2種以上を組み合わせて用いてもよい。
本発明の銅被膜形成剤は、原料である本発明の含窒素複素環式化合物と蟻酸銅を混合し、必要に応じて溶剤を加え、必要に応じて粉砕し、混練するだけで容易に調製でき、特別な合成操作を必要としない。
本発明の銅錯体を別途調製する場合には、例えば蟻酸銅を適量の溶媒に溶解又は分散させ、これに本発明の含窒素複素環式化合物を添加して攪拌する。その後、溶媒を減圧蒸留により、除去することにより得ることができる。
溶剤は、本発明の銅被膜形成剤を溶液状、分散液状又はペースト状にできるものであれば特に限定されず、1種もしくは2種以上を組み合わせて使用してもよい。溶剤の配合量は、一般的な量とすることができ、得られる銅被膜の形成剤の粘度、印刷性を考慮して適当な比率を決定すればよい。
本発明の銅被膜の形成方法は、上記で説明した銅被膜形成剤を基材上に塗布して塗布膜を形成する塗布工程と、その後、塗布膜を常圧で加熱焼成する加熱工程とを有する。
なお、使用した主な原材料は、以下のとおりである。
また、市販品として入手できなかったものについては、公知の方法に従って合成した。すなわち、1位の窒素が未置換のイミダゾール化合物をN,N-ジメチルホルムアルデヒド中において水素化ナトリウムで処理した後、対応するハロゲン化アルキル化合物と加熱下で反応させ、通常の後処理後、溶媒を減圧留去することにより目的物を得た。
・イミダゾール(和光純薬工業製)
・1-メチルイミダゾール(同上)
・1-エチルイミダゾール(同上)
・1-ブチルイミダゾール(同上)
・1-プロピルイミダゾール(東京化成工業製)
・1-イソプロピルイミダゾール(同上)
・1-ビニルイミダゾール(同上)
・4-メトキシピリジン(同上)
・1-アリルイミダゾール(AlfaAesar製)
・1-メチル-1,2,4-トリアゾール(同上)
・2-エチル-1-メチルイミダゾール(2-エチルイミダゾール(商品名「2EZ」、四国化成工業製)より合成)
・1-エチル-2-メチルイミダゾール(2-メチルイミダゾール(商品名「2MZ」、四国化成工業製)より合成)
・1-ペンチルイミダゾール(イミダゾール(和光純薬工業製)より合成)
・1-ヘキシルイミダゾール(イミダゾール(和光純薬工業製)より合成)
・2-エチル-1-ヘキシル-4-メチルイミダゾール(2-エチル-4-メチルイミダゾール(商品名「2E4MZ」、四国化成工業製)より合成)
・1-オクチルイミダゾール(Aldrich製)
・ピリダジン(同上)
・1,2-ジメチルイミダゾール(商品名「1,2DMZ」、四国化成工業製)
・1-ベンジル-2-メチルイミダゾール(商品名「1B2MZ」、四国化成工業製)
・2-メチルイミダゾール(商品名「2MZ」、四国化成工業製)
・4-メチルイミダゾール(商品名「4MZ」、四国化成工業製)
・3-(ジメチルアミノ)-1,2-プロパンジオール(和光純薬工業製)
・蟻酸銅(II)・四水和物(同上)
実施例1~4及び比較例1~5において銅被膜形成剤の調製に使用した銅錯体は以下のとおりであり、これらの合成例を参考例1~9に示す。
[銅錯体]
・1-メチルイミダゾール銅錯体(「1MZ-Cu」と略記する)
・1-エチルイミダゾール銅錯体(「1EZ-Cu」と略記する)
・1-ブチルイミダゾール銅錯体(「1BZ-Cu」と略記する)
・1,2-ジメチルイミダゾール銅錯体(「1,2MZ-Cu」と略記する)
・イミダゾール銅錯体(「SZ-Cu」と略記する)
・2-メチルイミダゾール銅錯体(「2MZ-Cu」と略記する)
・4-メチルイミダゾール銅錯体(「4MZ-Cu」と略記する)
・3-(ジメチルアミノ)-1,2-プロパンジオール銅錯体(「DMA-Cu」と略記する)
・アンモニア銅錯体(「NH4-Cu」と略記する)
<1MZ-Cuの合成>
蟻酸銅(II)・四水和物2.26gを乳鉢で細かく粉砕し、100mLのメタノール中に分散させた。これに1-メチルイミダゾール1.64gを加え、室温で撹拌して青色透明溶液を得た。次に溶剤を減圧留去して、青色固体の1-メチルイミダゾール銅錯体3.0gを得た。
<1EZ-Cuの合成>
参考例1の1-メチルイミダゾール1.64gを1-エチルイミダゾール1.92gに代えて、参考例1の方法に準拠して合成操作を行って、青色粘稠液体の1-エチルイミダゾール銅錯体3.3gを得た。
<1BZ-Cuの合成>
参考例1の1-メチルイミダゾール1.64gを1-ブチルイミダゾール2.48gに代えて、参考例1の方法に準拠して合成操作を行って、青色液体の1-ブチルイミダゾール銅錯体3.8gを得た。
<1,2MZ-Cuの合成>
参考例1の1-メチルイミダゾール1.64gを1,2-ジメチルイミダゾール1.92gに代えて、参考例1の方法に準拠して合成操作を行って、青色固体の1,2-ジメチルイミダゾール銅錯体3.3gを得た。
<SZ-Cuの合成>
参考例1の1-メチルイミダゾール1.64gをイミダゾール1.36gに代えて、参考例1の方法に準拠して合成操作を行って、青色固体のイミダゾール銅錯体2.7gを得た。
<2MZ-Cuの合成>
参考例1の1-メチルイミダゾール1.64gを2-メチルイミダゾール1.64gに代えて、参考例1の方法に準拠して合成操作を行って、青色固体の2-メチルイミダゾール銅錯体3.0gを得た。
<4MZ-Cuの合成>
参考例1の1-メチルイミダゾール1.64gを4-メチルイミダゾール1.64gに代えて、参考例1の方法に準拠して合成操作を行って、青色固体の4-メチルイミダゾール銅錯体3.0gを得た。
<DMA-Cuの合成>
参考例1の1-メチルイミダゾール1.64gを3-(ジメチルアミノ)-1,2-プロパンジオール2.38gに代えて、参考例1の方法に準拠して合成操作を行って、青色液体の3-(ジメチルアミノ)-1,2-プロパンジオール銅錯体3.7gを得た。
<NH4-Cuの合成>
参考例1の1-メチルイミダゾール1.64gを25%アンモニア水1.36gに代えて、参考例1の方法に準拠して合成操作を行って、青色固体のアンモニア銅錯体1.8gを得た。
銅錯体の内、固体又は粘稠液体のものは、表1及び表2記載の割合でジエチレングリコールを加えて混練し、必要に応じて乳鉢で粉砕し、ペースト状にして銅被膜形成剤とした。液体のものは、そのまま銅被膜形成剤として使用した。
銅被膜形成剤の親水性表面に対する親和性を比較するために、元来親水性であるガラスを基材として使用した。
銅被膜形成剤を、48mm(縦)×28mm(横)×1.2~1.5mm(厚み)のスライドガラス上に、バーコーターを用いて、30mm(縦)×10mm(横)×0.1mm(厚み)のサイズのパターンを1つ印刷した。続いて、オーブンに入れて常圧の窒素雰囲気下で、130℃で30分間加熱し、銅被膜を形成させて、室温に戻してこれを試験片とした。
試験片上に形成された銅被膜の外観様相を目視により確認した。銅色の膜状の銅被膜が形成されていれば外観良好であり、変色したり粉状に析出していたりすれば外観不良と判定した。
○:外観良好(銅色膜状)
×:外観不良(褐色膜状、又は粉状)
走査電子顕微鏡(日立製作所製「S-4800」)を用い、加速電圧5kVとして3000倍及び30000倍の倍率でSEM撮影を行った。
TG-DTA(セイコーインスツル製「EXSTAR6000-TG/DTA6300」を用い、窒素流量500mL/minで室温から200℃まで昇温速度10℃/minで昇温した。重量減少を伴う吸熱を示した後の発熱ピーク温度を析出温度として記録した。尚、析出温度は、銅被膜形成剤を加熱焼成する際に、温度設定の目安となるパラメーターであり、銅被膜を形成し得る温度を示すものではない。
低抵抗率計(三菱化学アナリテック製「ロレスタ-GP」、APプローブ)を用いて、試験片上に形成された銅被膜の抵抗値を測定した。
試験片上に形成された銅被膜を綿棒で擦り、密着性を確認した。容易に剥がれなければ密着性良好であり、剥がれれば密着性不良と判定した。
○:密着性良好
×:密着性不良
表1に記載の組成を有する銅被膜形成剤を用いて試験片を作製し、得られた銅被膜の外観、析出温度の測定、抵抗値の測定及び密着性試験を行った。得られた試験結果は、表1に示したとおりであった。
また、試験片のSEM撮影画像を図1に示す。
表2に記載の組成を有する銅被膜形成剤を用いて試験片を作製し、得られた銅被膜の外観、析出温度の測定、抵抗値の測定及び密着性試験を行った。得られた試験結果は、表2に示したとおりであった。
また、比較例3及び4の試験片のSEM撮影画像を図1に示す。
また、図1の結果より、実施例1~4の試験片は均一性が高く緻密な銅被膜が形成されていたのに対し、比較例3の試験片は銅表面に有機物残渣が存在しており、比較例4の試験片は粗大な銅粒子が析出しており、いずれも均一な銅被膜が形成されなかった。
下記の方法により実施例5~21及び比較例6~11の試験片を作製し、以下の試験に供した。
含窒素複素環式化合物及び蟻酸銅・四水和物を、表3又は表4記載の割合で配合して混練し、固体又は粘稠液体になったものについてはエチレングリコールを加えて混練し、必要に応じて乳鉢で粉砕し、ペースト状にして銅被膜形成剤とした。エチレングリコールを加えずとも液体のものは、そのまま銅被膜形成剤として使用した。
銅被膜形成剤の親水性表面に対する親和性を比較するために、元来親水性であるガラスを基材として使用した。
銅被膜の形成剤を、48mm(縦)×28mm(横)×1.2~1.5mm(厚み)のスライドガラス上に、厚さ0.055mmのポリイミドテープを10mm間隔で平行に貼り、その間に銅被膜形成剤を盛り付けたのち、余剰分をプレートでかきとるようにして、30mm(縦)×10mm(横)×0.055mm(厚み)のサイズのパターンを1つ印刷した。続いて、ホットプレートを用いて窒素雰囲気下で、130℃で30分間加熱し、銅被膜を形成させて、室温に戻してこれを試験片とした。
試験片上に形成された銅被膜の外観様相を目視により確認した。銅色の膜状の銅被膜が形成されていれば外観良好であり、ムラになっていたり固まっていなかったりしていれば外観不良と判定した。
○:外観良好(銅色膜状)
×:外観不良(ムラ、又は固まっていない(ウェット)、又は黒色膜状)
顕微CCDカメラ(ニコン製「DS-5M-U1」)を用い、7倍の倍率でCCD撮影を行った。
低抵抗率計(三菱化学アナリテック製「ロレスタ-GP」、TFPプローブ)を用いて、試験片上に形成された銅被膜の抵抗値を測定した。但し、均一な膜状にならなかった試験片については、そもそも導体として機能し得ないと判断し、測定を実施しなかった。
試験片上に形成された銅被膜を綿棒で擦り、密着性を確認した。容易に剥がれなければ密着性良好であり、剥がれれば密着性不良と判定した。
○:密着性良好
×:密着性不良
表3に記載の組成を有する銅被膜形成剤を用いて試験片を作製し、得られた銅被膜の外観、抵抗値の測定及び密着性試験を行った。得られた試験結果は、表3に示したとおりであった。
また、実施例8~10の試験片のCCD撮影画像を図2に示す。
表4に記載の組成を有する銅被膜形成剤を用いて試験片を作製し、得られた銅被膜の外観、抵抗値の測定及び密着性試験を行った。得られた試験結果は、表4に示したとおりであった。
また、比較例6、7の試験片のCCD撮影画像を図2に示す。
また、図2の結果より、実施例8~10の試験片は、ガラス表面で弾かれることなく、均一な膜が形成されていたのに対し、比較例6,7の試験片は、ガラス表面で弾かれてしまい、均一な膜が形成されなかった。
下記の方法により、本発明の銅被膜形成剤による様々な材質や性状の基材に対する銅被膜の形成、及び加工について確認試験を行った。
1-メチルイミダゾール26gを40gのメタノールに溶解させ、これに蟻酸銅・四水和物36gを加えて撹拌して溶解させ、1MZ-Cuのメタノール溶液を調製し銅被膜形成剤とした。これに30mm角に切断したパルプ紙(日本製紙クレシア製「キムワイプS-200」)を浸漬したのち引き上げ、空気中で乾燥させた。これをオーブンの中に吊るし、窒素雰囲気下130℃で30分間加熱して銅被膜を形成させ、室温に戻して取り出した。取り出した紙は銅色を呈しており、低抵抗率計(三菱化学アナリテック製「ロレスタ-GP」、TFPプローブ)を用いて導電性を確認したところ、6.14Ωの抵抗値を示した。
実施例22で調製した銅被膜形成剤にゼオライト(和光純薬工業製「沸騰石」)を2g加え、常温で1分間撹拌した。これをろ別採取して蒸発皿に移し、自然乾燥させたのち、オーブンに入れて窒素雰囲気下130℃で30分間加熱し、室温に戻して取り出した。取り出したゼオライトは茶色を呈しており、粒子一粒をテスターで挟んで導電性を確認したところ、50Ωの抵抗値を示した。
50mm(縦)×30mm(横)に切断した厚み0.125mmのポリエチレンテレフタラートフィルム(東レ製、「ルミラーS10」)を用意し、UV照射機(ウシオ電機製「ミニエキシマ」)を用いて172nmのUV光を5分間照射することにより親水化処理を施した。実施例8で調製した銅被膜形成剤を用い、実施例8と同様にして、このポリエチレンテレフタラートフィルム上に、30mm(縦)×20mm(横)×0.055mm(厚み)のサイズのパターンを1つ印刷した。これをホットプレート上で、窒素雰囲気下120℃で30分間加熱して銅被膜を形成させ、室温に戻して取り出した。取り出した試料は銅色膜状を呈しており、JIS K5400に準じて密着性を評価したところ、一片も剥がれることなく良好な密着性を示した。低抵抗率計(三菱化学アナリテック製「ロレスタ-GP」、TFPプローブ)を用いて導電性を確認したところ、0.03Ωの抵抗値を示した。
実施例24で作成した銅被膜上に市販の硫酸銅めっき浴を用いて電解銅めっきを施したところ、問題なく銅めっき被膜が形成された。
Claims (20)
- 1~3個の窒素原子を有する5員又は6員の含窒素複素環式化合物と蟻酸銅からなる銅錯体を含有し、前記含窒素複素環式化合物が1個又は2個の環構造を有し、置換基に含まれる炭素原子の総数は1~5であり、該化合物中の炭素原子以外の元素が水素原子と結合していない、銅被膜形成剤。
- 前記置換基が、アルキル基、アルケニル基、アルキニル基、アルコキシル基及びアルコキシルアルキル基からなる群から選択される、請求項1に記載の銅被膜形成剤。
- 前記含窒素複素環式化合物が、下記式(I)で示されるイミダゾール化合物である、請求項1又は請求項2に記載の銅被膜形成剤。
- 前記式(I)で示されるイミダゾール化合物が、1-メチルイミダゾール、1-エチルイミダゾール、1,2-ジメチルイミダゾール、1-エチル-2-メチルイミダゾール、2-エチル-1-メチルイミダゾール、1-プロピルイミダゾール、1-イソプロピルイミダゾール、1-ブチルイミダゾール、1-ペンチルイミダゾール、1-ビニルイミダゾール、1-アリルイミダゾールからなる群から選択される少なくとも1つである、請求項3に記載の銅被膜形成剤。
- 前記含窒素複素環式化合物が、下記式(IIa)又は下記式(IIb)で示されるトリアゾール化合物である、請求項1又は請求項2に記載の銅被膜形成剤。
- 前記含窒素複素環式化合物が、下記式(IV)で示されるピラゾール化合物である、請求項1又は請求項2に記載の銅被膜形成剤。
- 有機溶剤又は水を含有する、請求項1~請求項7のいずれか一項に記載の銅被膜形成剤。
- 金属粉末を含有する、請求項1~請求項8のいずれか一項に記載の銅被膜形成剤。
- 請求項1~請求項9のいずれか一項に記載の銅被膜形成剤を基材上に塗布して塗布膜を形成する塗布工程、及び前記塗布膜を常圧で加熱焼成する加熱工程を含む、銅被膜の形成方法。
- 前記塗布工程の前に基材表面に親水化処理を施す、請求項10に記載の銅被膜の形成方法。
- 前記加熱工程が、130℃以下の温度で行われる、請求項10又は請求項11に記載の銅被膜の形成方法。
- 前記加熱工程を不活性ガス雰囲気下で行う、請求項10~請求項12のいずれか一項に記載の銅被膜の形成方法。
- 前記不活性ガス雰囲気が、窒素雰囲気である、請求項13に記載の銅被膜の形成方法。
- 前記基材が、ガラス基材、シリコン基材、金属基材、セラミック基材及び樹脂基材からなる群から選択される少なくとも1つである、請求項10~請求項14のいずれか一項に記載の銅被膜の形成方法。
- 前記塗布工程が、スピンコート法、ディップ法、スプレーコート法、ミストコート法、フローコート法、カーテンコート法、ロールコート法、ナイフコート法、ブレードコート法、エアードクターコート法、バーコート法、スクリーン印刷法、グラビア印刷法、オフセット印刷法、フレキソ印刷法、及び刷毛塗り法からなる群から選択される少なくとも1つの方法により行われる、請求項10~請求項15のいずれか一項に記載の銅被膜の形成方法。
- 請求項10~請求項16のいずれか一項に記載の銅被膜の形成方法によって形成された銅被膜を備える、物品。
- 請求項10~請求項16のいずれか一項に記載の銅被膜の形成方法によって形成された銅被膜を備える、配線基板。
- 請求項10~請求項16のいずれか一項に記載の銅被膜の形成方法によって形成された銅被膜をシード層として用い、セミアディティブプロセス又はフルアディティブプロセスによって回路形成する、配線基板の製造方法。
- 請求項19に記載の製造方法により製造された、配線基板。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020157000590A KR102086501B1 (ko) | 2012-07-09 | 2013-05-30 | 구리 피막 형성제 및 구리 피막의 형성 방법 |
CN201380036469.4A CN104471108B (zh) | 2012-07-09 | 2013-05-30 | 铜覆膜形成剂及铜覆膜的形成方法 |
IN149DEN2015 IN2015DN00149A (ja) | 2012-07-09 | 2013-05-30 | |
JP2014524689A JP6027613B2 (ja) | 2012-07-09 | 2013-05-30 | 銅被膜形成剤及び銅被膜の形成方法 |
EP13816923.0A EP2871260B1 (en) | 2012-07-09 | 2013-05-30 | Copper film-forming agent and method for forming copper film |
US14/413,532 US10405422B2 (en) | 2012-07-09 | 2013-05-30 | Copper film-forming agent and method for forming copper film |
BR112015000524-1A BR112015000524B1 (pt) | 2012-07-09 | 2013-05-30 | Método para formar uma película de cobre e método para fabricar uma placa de fiação |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012154124 | 2012-07-09 | ||
JP2012-154124 | 2012-07-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014010328A1 true WO2014010328A1 (ja) | 2014-01-16 |
Family
ID=49915802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2013/065108 WO2014010328A1 (ja) | 2012-07-09 | 2013-05-30 | 銅被膜形成剤及び銅被膜の形成方法 |
Country Status (10)
Country | Link |
---|---|
US (1) | US10405422B2 (ja) |
EP (1) | EP2871260B1 (ja) |
JP (1) | JP6027613B2 (ja) |
KR (1) | KR102086501B1 (ja) |
CN (1) | CN104471108B (ja) |
BR (1) | BR112015000524B1 (ja) |
IN (1) | IN2015DN00149A (ja) |
MY (1) | MY171068A (ja) |
TW (1) | TWI567231B (ja) |
WO (1) | WO2014010328A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016079439A (ja) * | 2014-10-14 | 2016-05-16 | 四国化成工業株式会社 | 銅被膜形成剤およびその利用 |
WO2016197234A1 (en) * | 2015-06-11 | 2016-12-15 | National Research Council Of Canada | Preparation of high conductivity copper films |
JP2021517933A (ja) * | 2018-11-14 | 2021-07-29 | ワイエムティー カンパニー リミテッド | めっき積層体及びプリント回路基板 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7242557B2 (ja) | 2017-02-08 | 2023-03-20 | ナショナル リサーチ カウンシル オブ カナダ | 低粘度及び低処理温度を有する銀分子インク |
TW201842088A (zh) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | 可印刷分子油墨 |
TW201842087A (zh) | 2017-02-08 | 2018-12-01 | 加拿大國家研究委員會 | 具改良之熱穩定性的分子油墨 |
JP6573942B2 (ja) * | 2017-09-15 | 2019-09-11 | 住友化学株式会社 | ガス分離方法 |
JP6573650B2 (ja) | 2017-09-15 | 2019-09-11 | 住友化学株式会社 | ガス分離方法 |
JP7427325B2 (ja) * | 2019-06-18 | 2024-02-05 | 株式会社ディスコ | テープ貼着方法 |
CN118202008A (zh) * | 2021-11-11 | 2024-06-14 | 柯尼卡美能达株式会社 | 非感光性表面改性剂、层叠体、印刷电路板和电子器件 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5217335A (en) * | 1975-08-01 | 1977-02-09 | Hitachi Ltd | Chemical copper plating solution |
JP2005002471A (ja) | 2003-06-03 | 2005-01-06 | Basf Ag | 基材上の銅層の析出 |
JP2005035984A (ja) | 2003-07-03 | 2005-02-10 | Mec Kk | 銅化合物及びそれを用いた銅薄膜の製造方法 |
JP2005513117A (ja) | 2001-12-12 | 2005-05-12 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 銅ホルメート錯体を用いる銅の沈着 |
JP2009256218A (ja) | 2008-04-14 | 2009-11-05 | Toray Ind Inc | 銅前駆体組成物およびそれを用いた銅膜の製造方法。 |
JP2012112022A (ja) * | 2010-11-26 | 2012-06-14 | Adeka Corp | 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818255A (en) | 1987-02-10 | 1989-04-04 | Kozo Director-general of Agency of Industrial Science and Technology Iizuka | Material for gas separation |
KR0137370B1 (ko) | 1988-11-07 | 1998-04-27 | 니시가와 레이치 | 구리 도금된 수지 제품의 제조방법 |
JPH06181387A (ja) | 1992-12-15 | 1994-06-28 | Mitsubishi Gas Chem Co Inc | 銅膜形成基材の製造法 |
TW263534B (ja) * | 1993-08-11 | 1995-11-21 | Makkusu Kk | |
US20030148024A1 (en) * | 2001-10-05 | 2003-08-07 | Kodas Toivo T. | Low viscosity precursor compositons and methods for the depositon of conductive electronic features |
KR100707818B1 (ko) * | 1998-09-14 | 2007-04-13 | 이비덴 가부시키가이샤 | 프린트 배선판 및 그 제조방법 |
JP3986743B2 (ja) | 2000-10-03 | 2007-10-03 | 株式会社日立製作所 | 配線基板とその製造方法及びそれに用いる無電解銅めっき液 |
JP4309602B2 (ja) * | 2001-04-25 | 2009-08-05 | メック株式会社 | 銅または銅合金と樹脂との接着性を向上させる方法、ならびに積層体 |
US6951666B2 (en) | 2001-10-05 | 2005-10-04 | Cabot Corporation | Precursor compositions for the deposition of electrically conductive features |
EP1626614B1 (en) * | 2003-05-16 | 2013-08-28 | Harima Chemicals, Inc. | Method for forming fine copper particle sintered product type of electric conductor having fine shape, method for forming fine copper wiring and thin copper film |
EP1662020B1 (en) | 2003-07-03 | 2008-05-14 | Mec Company Ltd. | Method for producing a copper thin film |
JP3952410B2 (ja) * | 2004-02-10 | 2007-08-01 | タムラ化研株式会社 | 金属の表面処理剤、プリント回路基板およびプリント回路基板の金属の表面処理方法 |
TW200613586A (en) * | 2004-07-22 | 2006-05-01 | Rohm & Haas Elect Mat | Leveler compounds |
US7550179B2 (en) * | 2004-08-30 | 2009-06-23 | E.I Du Pont De Nemours And Company | Method of copper deposition from a supercritical fluid solution containing copper (I) complexes with monoanionic bidentate and neutral monodentate ligands |
US20060096867A1 (en) * | 2004-11-10 | 2006-05-11 | George Bokisa | Tin alloy electroplating system |
JP4489618B2 (ja) * | 2005-03-14 | 2010-06-23 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US7662981B2 (en) | 2005-07-16 | 2010-02-16 | Rohm And Haas Electronic Materials Llc | Leveler compounds |
JP2008205430A (ja) * | 2007-01-26 | 2008-09-04 | Konica Minolta Holdings Inc | 金属パターン形成方法及び金属塩混合物 |
KR20080083790A (ko) | 2007-03-13 | 2008-09-19 | 삼성전자주식회사 | 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법 |
CN101868563B (zh) | 2007-11-19 | 2012-09-12 | 日本帕卡濑精株式会社 | 金属材料用基底处理剂和金属材料的基底处理方法 |
US8449948B2 (en) * | 2009-09-10 | 2013-05-28 | Western Digital (Fremont), Llc | Method and system for corrosion protection of layers in a structure of a magnetic recording transducer |
US20110220512A1 (en) * | 2010-03-15 | 2011-09-15 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
US8268157B2 (en) * | 2010-03-15 | 2012-09-18 | Rohm And Haas Electronic Materials Llc | Plating bath and method |
KR101194541B1 (ko) * | 2010-12-09 | 2012-10-26 | 삼성전기주식회사 | 주석 또는 주석 합금 도금의 변색 방지제, 및 이를 이용한 회로 기판 및 그 제조방법 |
JP5615227B2 (ja) * | 2011-05-23 | 2014-10-29 | 四国化成工業株式会社 | 銅または銅合金の表面処理剤及びその利用 |
-
2013
- 2013-05-30 CN CN201380036469.4A patent/CN104471108B/zh active Active
- 2013-05-30 IN IN149DEN2015 patent/IN2015DN00149A/en unknown
- 2013-05-30 WO PCT/JP2013/065108 patent/WO2014010328A1/ja active Application Filing
- 2013-05-30 JP JP2014524689A patent/JP6027613B2/ja active Active
- 2013-05-30 EP EP13816923.0A patent/EP2871260B1/en active Active
- 2013-05-30 KR KR1020157000590A patent/KR102086501B1/ko active IP Right Grant
- 2013-05-30 MY MYPI2015700064A patent/MY171068A/en unknown
- 2013-05-30 US US14/413,532 patent/US10405422B2/en active Active
- 2013-05-30 BR BR112015000524-1A patent/BR112015000524B1/pt active IP Right Grant
- 2013-05-31 TW TW102119536A patent/TWI567231B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5217335A (en) * | 1975-08-01 | 1977-02-09 | Hitachi Ltd | Chemical copper plating solution |
JP2005513117A (ja) | 2001-12-12 | 2005-05-12 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | 銅ホルメート錯体を用いる銅の沈着 |
JP2005002471A (ja) | 2003-06-03 | 2005-01-06 | Basf Ag | 基材上の銅層の析出 |
JP2005035984A (ja) | 2003-07-03 | 2005-02-10 | Mec Kk | 銅化合物及びそれを用いた銅薄膜の製造方法 |
JP2009256218A (ja) | 2008-04-14 | 2009-11-05 | Toray Ind Inc | 銅前駆体組成物およびそれを用いた銅膜の製造方法。 |
JP2012112022A (ja) * | 2010-11-26 | 2012-06-14 | Adeka Corp | 銅膜形成用組成物及び該組成物を用いた銅膜の製造方法 |
Non-Patent Citations (2)
Title |
---|
See also references of EP2871260A4 |
THERMOCHIMICA ACTA, vol. 98, 1986, pages 139 - 145 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016079439A (ja) * | 2014-10-14 | 2016-05-16 | 四国化成工業株式会社 | 銅被膜形成剤およびその利用 |
WO2016197234A1 (en) * | 2015-06-11 | 2016-12-15 | National Research Council Of Canada | Preparation of high conductivity copper films |
JP2018525770A (ja) * | 2015-06-11 | 2018-09-06 | ナショナル リサーチ カウンシル オブ カナダ | 高導電性銅フィルムの調製 |
EP3307705A4 (en) * | 2015-06-11 | 2019-01-23 | National Research Council of Canada | PREPARATION OF COPPER FILMS WITH HIGH CONDUCTIVITY |
US10954406B2 (en) | 2015-06-11 | 2021-03-23 | National Research Council Of Canada | Preparation of high conductivity copper films |
JP2021517933A (ja) * | 2018-11-14 | 2021-07-29 | ワイエムティー カンパニー リミテッド | めっき積層体及びプリント回路基板 |
JP7205027B2 (ja) | 2018-11-14 | 2023-01-17 | ワイエムティー カンパニー リミテッド | めっき積層体及びプリント回路基板 |
Also Published As
Publication number | Publication date |
---|---|
TW201406991A (zh) | 2014-02-16 |
EP2871260A4 (en) | 2016-07-06 |
KR102086501B1 (ko) | 2020-03-09 |
IN2015DN00149A (ja) | 2015-06-12 |
BR112015000524A2 (ja) | 2019-12-31 |
JPWO2014010328A1 (ja) | 2016-06-20 |
CN104471108A (zh) | 2015-03-25 |
TWI567231B (zh) | 2017-01-21 |
US20150189748A1 (en) | 2015-07-02 |
EP2871260B1 (en) | 2019-03-06 |
BR112015000524B1 (pt) | 2021-03-30 |
US10405422B2 (en) | 2019-09-03 |
JP6027613B2 (ja) | 2016-11-16 |
KR20150034168A (ko) | 2015-04-02 |
MY171068A (en) | 2019-09-24 |
EP2871260A1 (en) | 2015-05-13 |
CN104471108B (zh) | 2020-05-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6027613B2 (ja) | 銅被膜形成剤及び銅被膜の形成方法 | |
KR100711505B1 (ko) | 도전막 형성을 위한 은 페이스트 | |
JP2009256218A (ja) | 銅前駆体組成物およびそれを用いた銅膜の製造方法。 | |
EP2684917B1 (en) | Zinc oxide film-forming composition, zinc oxide film production method, and zinc compound | |
WO2013130450A2 (en) | Self-reducing metal complex inks soluble in polar protic solvents and improved curing methods | |
EP2902529B1 (en) | Substrate processing method for supporting a catalyst particle for plating process | |
CN107636055B (zh) | 金属纳米粒子分散体 | |
JP2016079439A (ja) | 銅被膜形成剤およびその利用 | |
JP6067515B2 (ja) | 導電膜形成用組成物およびこれを用いる導電膜の製造方法 | |
CN107636083B (zh) | 金属纳米粒子分散体 | |
EP3307705B1 (en) | Preparation of high conductivity copper films | |
JP6100178B2 (ja) | 銅被膜形成剤および銅被膜の形成方法 | |
JP2016139597A (ja) | 樹枝状銀コート銅粉の製造方法 | |
JP6324728B2 (ja) | 銅回路の形成方法 | |
JP2009228017A (ja) | 銅微粒子の製造方法および銅微粒子 | |
JP2009161838A (ja) | 銅微粒子の製造方法および銅微粒子 | |
KR100587402B1 (ko) | 도전선 패턴 형성을 위한 은 오르가노 졸 잉크 | |
JP2009149918A (ja) | 銅微粒子の製造方法および銅微粒子 | |
WO2019009146A1 (ja) | 導電性ペースト | |
JP2015128094A (ja) | 銅回路の形成方法 | |
WO2023215849A2 (en) | Conductive ink compositions comprising gold complexes | |
JP6111170B2 (ja) | 導電膜形成用組成物およびこれを用いる導電膜の製造方法 | |
JP2011184728A (ja) | 無電解めっき前処理剤 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 13816923 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2014524689 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2013816923 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14413532 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20157000590 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
REG | Reference to national code |
Ref country code: BR Ref legal event code: B01A Ref document number: 112015000524 Country of ref document: BR |
|
ENP | Entry into the national phase |
Ref document number: 112015000524 Country of ref document: BR Kind code of ref document: A2 Effective date: 20150109 |
|
REG | Reference to national code |
Ref country code: BR Ref legal event code: B01E Ref document number: 112015000524 Country of ref document: BR Kind code of ref document: A2 Free format text: APRESENTE A TRADUCAO SIMPLES DA FOLHA DE ROSTO DA CERTIDAO DE DEPOSITO DA PRIORIDADE JP 2012-154124; OU DECLARACAO DE QUE OS DADOS DO PEDIDO INTERNACIONAL ESTAO FIELMENTE CONTIDOS NA PRIORIDADE REIVINDICADA, CONTENDO TODOS OS DADOS IDENTIFICADORES DESTA (TITULARES, NUMERO DE REGISTRO, DATA E TITULO), CONFORME O PARAGRAFO UNICO DO ART. 25 DA RESOLUCAO 77/2013. CABESALIENTAR QUE NAO FOI POSSIVEL IDENTIFICAR OS TITULARES DO PEDIDO PRIORITARIO NOS DOCUMENTOS JUNTADOS AO PROCESSO, TAMPOUCO NOS APRESENTADOS NA OMPI, POIS SE ENCONTRAM EM JAPONES. |
|
ENP | Entry into the national phase |
Ref document number: 112015000524 Country of ref document: BR Kind code of ref document: A2 Effective date: 20150109 |