WO2014002467A1 - ワークの研磨方法およびワークの研磨装置 - Google Patents
ワークの研磨方法およびワークの研磨装置 Download PDFInfo
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- WO2014002467A1 WO2014002467A1 PCT/JP2013/003935 JP2013003935W WO2014002467A1 WO 2014002467 A1 WO2014002467 A1 WO 2014002467A1 JP 2013003935 W JP2013003935 W JP 2013003935W WO 2014002467 A1 WO2014002467 A1 WO 2014002467A1
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- Prior art keywords
- polishing
- workpiece
- surface plate
- carrier plate
- center
- Prior art date
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- 238000005498 polishing Methods 0.000 title claims abstract description 224
- 238000000034 method Methods 0.000 title claims abstract description 53
- 230000000737 periodic effect Effects 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
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- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
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- 239000004642 Polyimide Substances 0.000 description 1
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- 229910000831 Steel Inorganic materials 0.000 description 1
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
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Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Definitions
- the present invention relates to a workpiece polishing method and a polishing apparatus for simultaneously polishing front and back surfaces of a workpiece such as a semiconductor wafer with a polishing pad.
- semiconductor wafers such as silicon wafers, which are typical examples of workpieces used for polishing
- semiconductor wafers with a pair of surface plates having polishing pads Double-side polishing is performed in which the front and back surfaces are simultaneously polished.
- the shape required for semiconductor wafers (mainly the flatness of the entire surface and outer periphery) varies depending on the application, and the target for the polishing amount of the semiconductor wafer is determined according to each request, and the polishing amount is accurately controlled. It is necessary to.
- the flatness of the semiconductor wafer is one of the important factors, and therefore a method for appropriately controlling the polishing amount of the semiconductor wafer is required.
- Patent Document 1 discloses a change in the driving current of a motor that drives a surface plate (specifically, when the thickness of the workpiece becomes equal to the thickness of the carrier plate that holds the workpiece as the workpiece is polished). Specifically, a polishing method is described in which polishing is completed by detecting an inflection point of a current value. This polishing method is a method of detecting the end of polishing based on a change in the driving current of the motor, that is, the torque of the surface plate.
- Patent Document 2 a platen load current value of a double-side polishing apparatus for semiconductor wafers is measured, a standard deviation of the platen load current value is calculated for each reference time, and a change in the standard deviation is used for polishing.
- a semiconductor wafer polishing method for estimating the degree of progress is described. Furthermore, the standard deviation of the platen load current value is reduced due to the decrease in the frictional resistance as the polishing progresses, and the minimum value of the standard deviation is when the wafer thickness and the carrier plate thickness become equal. It is described that it is considered.
- This polishing method is a polishing method for estimating the progress of polishing based on the standard deviation of the torque of the surface plate.
- the polishing method described in Patent Document 2 cannot control the polishing amount of the semiconductor wafer with high accuracy for the following reason.
- the load current value caused by the change in frictional resistance is significantly smaller than the background load such as the operating current and noise that are constantly generated to move the double-side polishing machine, the background load itself will vary. It is difficult to determine the change in standard deviation because it is buried. Furthermore, even if the change in the standard deviation can be discriminated, the calculated standard deviation includes the variation due to the background load in addition to the variation due to the friction, and the variation due to the background itself fluctuates. The accuracy to grasp is not enough.
- an object of the present invention is to provide a workpiece polishing method and a workpiece polishing apparatus capable of controlling the workpiece polishing amount with higher accuracy.
- the present inventors have obtained the following knowledge. That is, when the workpiece is held in a holding hole having a center at a position separated from the center of the carrier plate, the carrier plate is sandwiched between the upper surface plate and the lower surface plate, and the polishing apparatus is driven, the upper surface plate is rotated every time the carrier plate rotates. The distance between the center of the lower surface plate and the center of the workpiece changes periodically.
- the torque of the carrier plate drive mechanism, upper surface plate or lower surface plate has a torque component that changes periodically in synchronization with the periodic change of this distance, and this torque component is extracted from the measured torque value. We were able to. This torque component was an index that is hardly affected by the background load. Further, it has been found that the amplitude of the torque component decreases with the progress of polishing, and particularly decreases when the workpiece has the same thickness as the carrier plate. Based on such knowledge, the present inventors have completed the present invention.
- the gist of the present invention is as follows.
- the workpiece polishing method according to the present invention includes: A workpiece held in a holding hole provided in a carrier plate and having a center at a position away from the center is sandwiched between an upper surface plate and a lower surface plate each provided with a polishing pad, and the carrier plate is rotated by a driving mechanism.
- a workpiece polishing method for simultaneously polishing the front and back surfaces of the workpiece with the polishing pad Measuring at least one of the torques of the drive mechanism, the upper surface plate and the lower surface plate;
- the amplitude of the torque component due to the periodic change in the distance, the torque component when the carrier plate takes a specific rotation angle, or the time when the carrier plate takes two different rotation angles The polishing amount of the workpiece is controlled based on the difference between the torque components.
- a plurality of the carrier plates each provided with one work may be provided between the upper surface plate and the lower surface plate, and the distances may vary with each work. preferable.
- polishing method it is preferable to measure the torque of both the upper surface plate and the lower surface plate and control the polishing amount of the workpiece using both torques.
- the workpiece is preferably a silicon wafer obtained by slicing a silicon ingot.
- another method for polishing a workpiece according to the present invention includes: A workpiece held in a holding hole provided in a carrier plate and having a center at a position away from the center is sandwiched between an upper surface plate and a lower surface plate each provided with a polishing pad, and the carrier plate is rotated by a driving mechanism.
- a workpiece polishing method for simultaneously polishing the front and back surfaces of the workpiece with the polishing pad Measure at least one current value among the current value of the motor of the drive mechanism and the current value of the motor that rotates at least one of the upper surface plate and the lower surface plate, The amplitude of the current value component resulting from the periodic change of the distance, the current value component when the carrier plate takes a specific rotation angle, or the time when the carrier plate takes two different specific rotation angles The amount of polishing of the workpiece is controlled based on the difference in the current value component.
- the workpiece polishing apparatus includes: A carrier plate; A holding hole provided in the carrier plate and having a center at a position spaced from the center; Sandwiching the work held in the holding hole, an upper surface plate and a lower surface plate each provided with a polishing pad; A drive mechanism for rotating the carrier plate, and a pair of motors for rotating the upper surface plate and the lower surface plate, respectively; A workpiece in which the distance between the center of the upper surface plate and the lower surface plate and the center of the workpiece periodically changes with each rotation of the carrier plate, and the front and back surfaces of the workpiece are simultaneously polished by the polishing pad.
- a polishing apparatus of A measuring unit that measures at least one of the torques of the drive mechanism, the upper surface plate, and the lower surface plate; and The amplitude of the torque component due to the periodic change in the distance, the torque component when the carrier plate takes a specific rotation angle, or the time when the carrier plate takes two different rotation angles And a control unit that controls a polishing amount of the workpiece based on the difference between the torque components.
- another workpiece polishing apparatus includes: A carrier plate; A holding hole provided in the carrier plate and having a center at a position spaced from the center; Sandwiching the work held in the holding hole, an upper surface plate and a lower surface plate each provided with a polishing pad; A drive mechanism for rotating the carrier plate, and a pair of motors for rotating the upper surface plate and the lower surface plate, respectively; A workpiece in which the distance between the center of the upper surface plate and the lower surface plate and the center of the workpiece periodically changes with each rotation of the carrier plate, and the front and back surfaces of the workpiece are simultaneously polished by the polishing pad.
- a polishing apparatus of A measuring unit that measures at least one of the current value of the motor of the drive mechanism and the current value of the pair of motors that rotates at least one of the upper surface plate and the lower surface plate; The amplitude of the current value component resulting from the periodic change of the distance, the current value component when the carrier plate takes a specific rotation angle, or the time when the carrier plate takes two different specific rotation angles And a control unit that controls the amount of polishing of the workpiece based on the difference in the current value component.
- the drive mechanism that periodically changes due to the periodic change of the distance between the center of the upper surface plate and the lower surface plate and the center of the workpiece.
- the torque component and the torque component for rotating the surface plate can be captured, and the polishing amount of the workpiece can be controlled with higher accuracy based on the amplitude of this component.
- FIG. 1 is a schematic diagram of a workpiece polishing apparatus according to an embodiment of the present invention.
- it is a diagram for explaining the initial state of polishing
- (A) shows when the distance D between the center of the surface plate and the center of the workpiece is the shortest.
- B is a schematic diagram showing when distance D is the longest
- (C) is a cross-sectional view taken along II in (A)
- (D) is II-II in (B).
- (E) is a figure which shows the relationship between the distance D and grinding
- (F) is a figure which shows the relationship between the distance D and the torque component concerning a surface plate.
- FIG. 4A shows when the distance D between the center of the surface plate and the center of the workpiece is the shortest.
- FIG. 4B is a schematic diagram illustrating a case where the distance D is the longest
- FIG. 4C is a cross-sectional view taken along the line III-III in FIG. 4A
- (E) is a figure which shows the relationship between the distance D and grinding
- (F) is a figure which shows the relationship between the distance D and the torque component concerning a surface plate.
- Example 1 it is a graph which shows the relationship between polishing time and the amplitude of a torque component. In Example 1, it is a graph which shows the relationship between the amplitude of a torque component, and the thickness of a wafer. In Example 1, it is a graph which shows the relationship between the amplitude of a torque component, and GBIR. In Example 1, it is a graph which shows the relationship between the amplitude of a torque component, and the maximum value of ESFQR. In Example 2, it is a graph which shows the relationship between polishing time and the amplitude of a torque component.
- Example 2 it is a graph which shows the relationship between the amplitude of a torque component, and the thickness of a wafer. In Example 2, it is a graph which shows the relationship between the amplitude of a torque component, and GBIR. In Example 2, it is a graph which shows the relationship between the amplitude of a torque component, and the maximum value of ESFQR.
- the polishing apparatus 1 includes a carrier plate 30 having a holding hole 40 for holding a workpiece 20, an upper surface plate 50a and a lower surface plate 50b provided with polishing pads 60a and 60b, an upper surface plate 50a and a lower surface plate 50b, respectively. Includes a pair of motors 90a and 90b.
- the center of the holding hole 40 is located away from the center of the carrier plate 30.
- the upper surface plate 50a and the lower surface plate 50b can sandwich the workpiece 20 held in the holding hole 40 with a constant pressure.
- the motors 90a and 90b rotate the upper surface plate 50a and the lower surface plate 50b in the opposite directions.
- the carrier plate 30 is provided with an outer gear (not shown) for meshing with a sun gear 70 and an internal gear 80 provided between the upper surface plate 50a and the lower surface plate 50b.
- the sun gear 70 and / or the internal gear 80 is a drive mechanism that is driven by a motor different from the motors 90 a and 90 b and rotates the carrier plate 30.
- the outer peripheral gear of the carrier plate 30 meshes with the sun gear 70 and the internal gear 80 to rotate the carrier plate 30. Note that the gear engagement of the sun gear 70, the internal gear 80, and the outer peripheral gear is not shown in order to simplify the polishing apparatus 1.
- the internal gear 80 is composed of individual shaft pins in which a large number of rotational drive shaft pins are arranged in the circumferential direction.
- the individual shaft pins mesh with the outer peripheral gear of the carry plate 30 to rotate the carrier plate 30.
- the individual shaft pins are not shown in order to simplify the polishing apparatus 1.
- the motor 90c of one shaft pin of the internal gear 80 is shown in FIG. 1, and the motor of the sun gear 70 is not shown.
- the carrier plate 30 rotates about the center of the carrier plate 30 as the center axis as the lower surface plate 50b is rotated by the motor 90b and the sun gear 70 and / or the internal gear 80 is rotated (hereinafter referred to as the center axis).
- the center axis simply referred to as “spinning”
- the sun gear 70 and / or the internal gear 80 is rotated
- the center axis simply referred to as “revolution”.
- the center of the holding hole 40 is located away from the center of the carrier plate 30, that is, the workpiece 20 is eccentric with respect to the center of the carrier plate 30, the upper limit is determined every rotation of rotation.
- the polishing apparatus 1 simultaneously chemically and mechanically polishes the front and back surfaces of the workpiece 20 with polishing pads 60a and 60b and dripping slurry (not shown) while rotating and revolving the sandwiched carrier plate 30.
- the polishing apparatus 1 includes motors 90a and 90b, and a measurement unit 110 (described later) that measures a current value of 90c and / or a motor (not shown). That is, the measuring unit 110 measures the torque of the upper surface plate 50a and the lower surface plate 50b and the drive mechanism (that is, the sun gear 70 and / or the internal gear 80).
- the polishing apparatus 1 includes a control unit 120. Details of the control performed by the control unit 120 will be described later.
- the thickness of the workpiece 20 and the thickness of the carrier plate 30 are aligned at the final stage of polishing. Therefore, regardless of the distance D, the pressure received by the carrier plate 30 and the workpiece 20 from the two surface plates 50a and 50b is uniform. Therefore, the torque component is constant regardless of the distance D (FIG. 3 (F)).
- the difference between the thickness of the workpiece 20 and the thickness of the carrier plate 30 is reduced as compared with the initial stage of polishing. Therefore, the pressure received from the two surface plates 50a and 50b concentrated at the center of the workpiece 20 at the initial stage of polishing is gradually dispersed. Therefore, the maximum displacement of the torque component decreases as the polishing progresses.
- the amplitude of the torque component gradually decreases with the progress of polishing from the initial stage of polishing, and becomes almost zero when the final stage of polishing, that is, the thickness of the workpiece 20 is equal to the carrier plate 30. (You may think that the torque component itself disappears.)
- the torque component can be extracted from the torque of the upper surface plate 50a. More specifically, after the detected torque signal is arranged according to the rotation angle of the carrier plate at the time of detection, the vibration waveform is calculated. In calculating the vibration waveform, for example, an approximation method to a trigonometric function by a least square method or the like can be used.
- the amplitude of the torque component is an index that excludes the influence of background loads such as operating current and noise for moving the polishing apparatus 1. Therefore, if the torque component is extracted from the measured torque value and the amplitude of the torque component is calculated, the polishing amount of the workpiece 20 can be controlled based on the change in the amplitude.
- the measuring unit 110 measures the current value of the motor 90a while the workpiece 20 is being polished.
- the torque of the upper surface plate 50a can be grasped as the current value of the motor 90a that rotates the upper surface plate 50a.
- the control unit 120 extracts a current value component corresponding to the torque component from the measured value of the current value by the extraction method, and controls the polishing amount of the workpiece 20 based on the amplitude of the current value component. .
- the correspondence between the amplitude of the current value component (that is, the torque component) and the polishing amount of the workpiece 20 is measured in advance using the test workpiece 20, and this correspondence is recorded in the polishing apparatus 1.
- the polishing amount of the workpiece 20 can be controlled with high accuracy. Even if the correspondence between the amplitude and the polishing amount of the workpiece 20 is not recorded in the polishing apparatus 1 in advance, if the change in the amplitude of the current value component (amplitude reduction) with the progress of polishing is used, the polishing amount Can be controlled.
- the influence of background loads such as operating current and noise is eliminated, and the center of the upper and lower surface plates and the center of the workpiece are separated.
- a torque component that changes in synchronization with a periodic change in the distance D can be captured, and the amount of workpiece polishing can be controlled with high accuracy based on the amplitude of the torque component.
- polishing method according to this invention can be performed with this apparatus.
- the torque of the upper surface plate 50a is used.
- the torque of the lower surface plate 50b may be measured and the torque component may be extracted.
- the torques of the upper surface plate 50a and the lower surface plate 50b are extracted. You may make it do.
- the torque of the internal gear 80 in the drive mechanism may be measured to extract the torque component.
- the torque of the internal gear 80 and the torques of the upper surface plate 50a and the lower surface plate 50b may be extracted.
- the torque of the sun gear 70 may be measured and the torque component may be extracted.
- the polishing amount can be controlled by the following two indices instead of the amplitude of the torque component.
- the first index is a torque component when the carrier plate takes a specific rotation angle.
- the second index is a difference in torque component at the time when the carrier plate takes two specific rotation angles different from each other. This will be described in detail below.
- FIG. 4A shows the carrier plate 30 and the workpiece 20 at a specific time point, and this state is assumed to be a rotation angle of zero.
- the point P is the center point of the carrier plate 30, the point where the distance from the point P to the work 20 becomes maximum is Q 0.
- FIG. 4B is a view after the carrier plate 30 rotates by a predetermined angle ⁇ .
- the a point Q 1 which distance is the largest of the workpiece 20 from the point P, the point Q 0, the point P, the angle of the point Q 1 as a rotation angle theta.
- FIG. 5 is a diagram showing the relationship between the rotation angle of the carrier plate 20 and the torque component.
- the polishing amount of the workpiece 20 is controlled based on torque components (C 1 , C 2 ,%)
- torque components C 1 , C 2 , etc.
- the workpiece 20 is based on the difference in torque components (D 1 ⁇ E 1 , D 2 ⁇ E 2 ,...)
- the amount of polishing may be controlled. This is because the values of these indexes also decrease as the polishing progresses and become zero when the thickness of the workpiece 20 becomes equal to the carrier plate 30.
- the amplitude of the torque component as shown in FIG.
- a 1 which is half the difference between the maximum value and the minimum value in one cycle
- a 2 which is the difference between the maximum value and the average value, or the average value, respectively.
- a 3 is the difference between the minimum value
- the carrier plate 30 is made of any material such as stainless steel (SUS: Steel special Use Stainless) or fiber reinforced plastic in which glass fiber, carbon fiber, aramid fiber, or other reinforced fiber is combined with resin such as epoxy, phenol, or polyimide. The surface of these materials coated with diamond-like carbon can also be used so as to improve the wear resistance. Further, the carrier plate 30 may have a groove for holding the dropped slurry in addition to the holding hole 40, and the thickness is set to be thinner than the thickness of the workpiece 20.
- stainless steel SUS: Steel special Use Stainless
- fiber reinforced plastic in which glass fiber, carbon fiber, aramid fiber, or other reinforced fiber is combined with resin such as epoxy, phenol, or polyimide.
- resin such as epoxy, phenol, or polyimide.
- the surface of these materials coated with diamond-like carbon can also be used so as to improve the wear resistance.
- the carrier plate 30 may have a groove for holding the dropped slurry in addition to the holding hole 40, and the thickness is set to be thinner than the thickness of
- any of the polishing pads 60a and 60b and the slurry can be used.
- the polishing pad a pad made of a non-woven fabric made of polyester, a pad made of polyurethane, or the like can be used.
- the dropping slurry for example, an alkaline aqueous solution containing free abrasive grains, an alkaline aqueous solution containing no free abrasive grains, or the like can be used.
- the upper surface plate 50a and the lower surface plate 50b are rotated in the opposite directions at the same rotational speed.
- the sun gear 70, the internal gear 80 and the outer peripheral gear of the carrier plate 30 mesh with each other, and the carrier plate 30 rotates.
- the amplitude of the torque component can be calculated by measuring the rotation angle of the carrier plate 30 using, for example, a tachometer, so that the polishing method according to the present invention can be implemented. .
- the polishing apparatus 1 rotates and revolves the carrier plate 30 for polishing.
- the polishing is performed by controlling the rotation of the internal gear 80 and rotating the carrier plate 30 only, the present invention is applicable.
- a polishing method according to can be carried out.
- the torque can be measured by measuring the current value of the motor 90a as described above, but the torque may be measured using a torque sensor or the like.
- FIGS. 6 (A) and 6 (B) When polishing a plurality of workpieces simultaneously, as shown in FIGS. 6 (A) and 6 (B), a plurality of carrier plates 31 to 35 each having one workpiece 21 to 25 are arranged on an upper surface plate.
- the distances D 1 to D 5 between the centers of the two surface plates 50a and 50b and the centers of the workpieces 21 to 25 are arranged and changed for each of the workpieces 21 to 25.
- FIG. 6A shows a state where the distances D 1 to D 5 are all the minimum
- FIG. 6B shows a state where the distances D 1 to D 5 are all the longest. In this case, the periodic changes in the torque components caused by the workpieces 21 to 25 coincide with each other.
- the torque is not offset for each workpiece, but rather strengthens, so the torque component can be more reliably extracted from the measured torque value, and the polishing amount of a plurality of workpieces can be controlled with high accuracy at one time. it can.
- the distances D 1 to D 5 do not need to completely coincide as shown in FIG.
- the polishing method according to the present invention can be performed even if two or more workpieces are arranged on one carrier plate.
- the target polishing amount of the workpiece 20 can be accurately determined as the thickness of the carrier plate 30 by terminating the polishing when the amplitude of the torque component is substantially eliminated. Note that when the amplitude of the torque component has substantially disappeared, the amplitude of the torque component has become negligible compared to the amplitude at the initial stage of polishing (for example, less than 5%), or has reached the detection lower limit value. Means that.
- the polishing may be finished before the amplitude of the torque component substantially disappears.
- the polishing may be terminated when the amplitude of the torque component at the initial polishing reaches 30%, 10%, or the like.
- a polishing time corresponding to the target polishing amount is further set, and only the set polishing time is set. What is necessary is just to continue grinding
- the torque of both the upper surface plate 50a and the lower surface plate 50b may be measured, and the polishing amount of the workpiece 20 may be controlled using both torques.
- the workpiece 20 is polished by reducing the measurement error by using the average value of the amplitude of the torque component obtained from the torque measurement value of the upper surface plate 50a and the amplitude obtained from the torque measurement value of the lower surface plate 50b.
- the amount can be controlled with higher accuracy.
- the polishing amount of the workpiece 20 may be controlled using the torque component of the drive mechanism.
- the polishing amount can be accurately controlled even for a silicon wafer obtained by slicing a single crystal or polycrystalline silicon ingot.
- the workpiece targeted by the present invention is not limited to a silicon wafer.
- any work that performs double-side polishing such as a SiC wafer, a sapphire wafer, and a compound semiconductor wafer, is included in the work targeted by the present invention.
- the shape of the workpiece 20 is illustrated as a circle. However, if the center of the workpiece 20 is located at a position separated from the center of the carrier plate 30, the workpiece 20 and the carrier plate 30 are circular. There is no need.
- the polishing method according to the present invention can be applied even when the work 20 has a circular shape or a polygonal shape such as a quadrangle.
- Example 1 A test was performed using the polishing apparatus having the configuration shown in FIGS. As a workpiece to be polished, an initial thickness of 753 ⁇ m, a diameter of 300 mm, a crystal orientation (110), and a P-type silicon wafer were used. Double-side polishing was performed with five polishing times of 1000 seconds, 1500 seconds, 1800 seconds, 2200 seconds, and 2500 seconds. As the five carrier plates, epoxy resin plates having an initial thickness of 746 ⁇ m were used. The center of the silicon wafer was positioned 30 mm away from the center of the carrier plate.
- a urethane foam polishing cloth MHN15 manufactured by Nitta Haas was used for the polishing pad, and a slurry Nalco 2350 made by Nitta Haas was used for the polishing slurry.
- the upper surface plate and the lower surface plate were rotated in opposite directions while the carrier plate was held between the upper and lower surface plates with a constant pressure by an elevator.
- the carrier plate was rotated at a constant speed of 10 rpm in the same direction as the upper surface plate by meshing the internal gear, sun gear, and outer peripheral gear of the carrier plate, and the front and back surfaces of the five silicon wafers loaded in the carrier plate were polished. .
- the upper surface plate, the lower surface plate, the internal gear, and the sun gear were rotated by different motors.
- the torque during polishing was measured by measuring the current value of the motor that rotates the upper platen every second. From the measured torque, the amplitude of the torque component was calculated by using an approximation method to a trigonometric function by the least square method. In this embodiment, the amplitude is obtained by half the difference between the maximum value and the minimum value of the torque component.
- FIG. 7 shows the amplitude of the torque component at the end of polishing in the above five polishing times.
- the amplitude at the end of polishing on the vertical axis is shown using a relative value when the amplitude at the end of polishing is 100% when the polishing time is 1000 seconds. Is the same.
- FIG. 8 shows the relationship between the amplitude of the torque component at the end of polishing and the wafer thickness.
- FIG. 9 shows the relationship between the amplitude of the torque component and the GBIR (Grobal Backside Ideal focal plane Range) near the outer periphery of the wafer.
- GBIR is an index indicating the flatness of the entire wafer surface, and the smaller the value, the higher the flatness. Specifically, it is obtained by calculating the difference between the maximum displacement and the minimum displacement of the entire wafer on the basis of the back surface of the wafer when it is assumed that the back surface of the wafer is completely sucked. In the present Example, it measured using the flatness measuring device (The product made by KLA-Tencor: WaferSight).
- FIG. 10 shows the relationship between the amplitude of the torque component and the maximum value of ESFQR (Edge flatness metric, Sector based, Front surface referenced, Site Front least sQuares Range) near the outer periphery of the wafer.
- ESFQR Edge flatness metric, Sector based, Front surface referenced, Site Front least sQuares Range
- the ESFQR means that the smaller the value, the higher the flatness, and the SFQR in the sector-shaped area (sector) formed in the outer peripheral area of the entire circumference of the wafer is measured. In the present Example, it measured using the flatness measuring apparatus (KLA-Tencor company make: WaferSight).
- SFQR Site Front least sQuares Range
- this SFQR acquires a plurality of rectangular samples of a predetermined size from a wafer, and calculates the sum of the absolute values of the maximum displacement amounts from the reference plane obtained by the least square method for each acquired sample. Is what you want.
- Example 2 The front and back surfaces of the silicon wafer were polished in the same manner as in Example 1 except that the current value of the motor of the internal gear as a drive mechanism was measured instead of the current value of the motor that rotates the upper surface plate.
- the polishing time was 1000 seconds, 1500 seconds, 1800 seconds, 2000 seconds, 2200 seconds, and 2500 seconds.
- the torque was measured from the current value of the motor of the internal gear, and the amplitude of the torque component was calculated from the measured torque.
- FIG. 12 shows the relationship between the amplitude of the torque component at the end of polishing and the thickness of the wafer.
- FIG. 13 shows the relationship between the amplitude of the torque component and the GBIR near the wafer outer periphery.
- FIG. 14 shows the relationship between the amplitude of the torque component and the maximum value of ESFQR near the outer periphery of the wafer.
- FIG. 11 shows that, as in Example 1, the amplitude of the torque component converges to zero as the polishing progresses. Further, as in Example 1, it can be seen from FIGS. 12 to 14 that there is a strong correlation between the amplitude of the torque component and the thickness and flatness of the wafer. Therefore, it can be understood that the polishing amount of the wafer can be accurately controlled also by the torque component of the driving mechanism.
- the torque component for rotation can be captured, and the polishing amount of the workpiece can be controlled with higher accuracy based on the amplitude of this component.
- Polishing device 20 Workpiece 30 Carrier plate 40 Holding hole 50a Upper surface plate 50b Lower surface plate 60a Polishing pad 60b Polishing pad 70 Sun gear 80 Internal gear 90a Motor 90b Motor 90c Motor 110 Measuring unit 120 Control unit
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Abstract
Description
すなわち、キャリアプレートの中心から離間した位置に中心を有する保持孔にワークを保持し、キャリアプレートを上定盤および下定盤間で挟み、研磨装置を駆動すると、キャリアプレートの回転ごとに上定盤および下定盤の中心とワークの中心との距離が周期的に変化する。キャリアプレートの駆動機構、上定盤または下定盤のトルクの中には、この距離の周期的な変化に同期して周期的に変化するトルク成分があり、トルクの測定値からこのトルク成分を抽出することができた。このトルク成分は、背景負荷の影響を受けにくい指標であった。さらに、このトルク成分の振幅は、研磨の進行にともない減少し、特に、ワークがキャリアプレートと等しい厚みになると著しく減少することを見出した。本発明者らは、このような知見に基づき、本発明を完成するに至った。
本発明によるワークの研磨方法は、
キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔に保持されたワークを、研磨パッドがそれぞれ設けられた上定盤および下定盤で挟み、前記キャリアプレートを駆動機構により回転させ、かつ、前記上定盤および下定盤を回転させることにより、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨方法であって、
前記駆動機構、前記上定盤および下定盤のトルクのうち、少なくとも一つのトルクを測定し、
前記距離の周期的な変化に起因するトルク成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記トルク成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記トルク成分の差に基づいて、前記ワークの研磨量を制御することを特徴とする。
キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔に保持されたワークを、研磨パッドがそれぞれ設けられた上定盤および下定盤で挟み、前記キャリアプレートを駆動機構により回転させ、かつ、前記上定盤および下定盤を回転させることにより、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨方法であって、
前記駆動機構のモータの電流値、ならびに前記上定盤および下定盤の少なくとも一方を回転させるモータの電流値のうち、少なくとも一つの電流値を測定し、
前記距離の周期的な変化に起因する電流値成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記電流値成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記電流値成分の差に基づいて、前記ワークの研磨量を制御することを特徴とする。
キャリアプレートと、
該キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔と、
該保持孔に保持されたワークを挟み込み、研磨パッドがそれぞれ設けられた上定盤および下定盤と、
前記キャリアプレートを回転させる駆動機構、ならびに、前記上定盤および下定盤をそれぞれ回転させる一対のモータと、
を有し、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨装置であって、
前記駆動機構、前記上定盤および下定盤のトルクのうち、少なくとも一つのトルクを測定する測定部と、
前記距離の周期的な変化に起因するトルク成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記トルク成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記トルク成分の差に基づいて、前記ワークの研磨量を制御する制御部と、を有することを特徴とする。
キャリアプレートと、
該キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔と、
該保持孔に保持されたワークを挟み込み、研磨パッドがそれぞれ設けられた上定盤および下定盤と、
前記キャリアプレートを回転させる駆動機構、ならびに、前記上定盤および下定盤をそれぞれ回転させる一対のモータと、
を有し、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨装置であって、
前記駆動機構のモータの電流値、ならびに前記上定盤および下定盤の少なくとも一方を回転させる前記一対のモータの電流値のうち、少なくとも一つの電流値を測定する測定部と、
前記距離の周期的な変化に起因する電流値成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記電流値成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記電流値成分の差に基づいて、前記ワークの研磨量を制御する制御部と、を有することを特徴とする。
前述の図1および図6に示した構成の研磨装置を用いて、試験を行った。研磨に供するワークとして、初期の厚さ753μm、直径300mm、結晶方位(110)、P型のシリコンウェーハを用いた。研磨時間は1000秒間、1500秒間、1800秒間、2200秒間、2500秒間の5通りとして、両面研磨を行った。5つのキャリアプレートには、初期の厚さ746μmであるエポキシ樹脂製のプレートを用いた。また、シリコンウェーハの中心は、キャリアプレートの中心から30mm離隔して位置させた。研磨パッドにはニッタ・ハース社製発泡ウレタン研磨布MHN15を用い、研磨スラリーにはニッタ・ハース社製スラリーNalco2350を用いた。昇降機により一定圧力でキャリアプレートを上下定盤間で挟持しながら、上定盤および下定盤を互いに逆方向に回転させた。キャリアプレートは、インターナルギア、サンギアおよびキャリアプレートの外周ギアの噛み合わせにより上定盤と同方向に10rpmで等速回転させて、キャリアプレート内に装填した5枚のシリコンウェーハの表裏面を研磨した。なお、上定盤、下定盤、インターナルギアおよびサンギアは、それぞれ異なるモータにより回転させた。
上定盤を回転させるモータの電流値に替えて、駆動機構としてのインターナルギアのモータの電流値を測定した以外は、実施例1と同様にシリコンウェーハの表裏面を研磨した。研磨時間は1000秒間、1500秒間、1800秒間、2000秒間、2200秒間、2500秒間の6通りとした。実施例1と同様に、インターナルギアのモータの電流値からトルクを測定し、測定したトルクから、トルク成分の振幅を算出した。
20 ワーク
30 キャリアプレート
40 保持孔
50a 上定盤
50b 下定盤
60a 研磨パッド
60b 研磨パッド
70 サンギア
80 インターナルギア
90a モータ
90b モータ
90c モータ
110 測定部
120 制御部
Claims (8)
- キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔に保持されたワークを、研磨パッドがそれぞれ設けられた上定盤および下定盤で挟み、前記キャリアプレートを駆動機構により回転させ、かつ、前記上定盤および下定盤を回転させることにより、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨方法であって、
前記駆動機構、前記上定盤および下定盤のトルクのうち、少なくとも一つのトルクを測定し、
前記距離の周期的な変化に起因するトルク成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記トルク成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記トルク成分の差に基づいて、前記ワークの研磨量を制御することを特徴とするワークの研磨方法。 - それぞれ1つのワークを配設した複数の前記キャリアプレートを前記上定盤および下定盤間に配設し、それぞれの前記ワークについて前記距離が揃って変化する請求項1に記載のワークの研磨方法。
- 前記トルク成分の振幅がなくなったとき、前記キャリアプレートが特定の回転角をとる時点での前記トルク成分の変化がなくなったとき、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記トルク成分の差がなくなったとき、前記ワークの研磨を終了する請求項1または2に記載のワークの研磨方法。
- 前記上定盤および下定盤の両方のトルクを測定し、両方のトルクを用いて前記ワークの研磨量を制御する請求項1~3のいずれか1項に記載のワークの研磨方法。
- 前記ワークはシリコンインゴットをスライスして得られたシリコンウェーハである請求項1~4のいずれか1項に記載のワークの研磨方法。
- キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔に保持されたワークを、研磨パッドがそれぞれ設けられた上定盤および下定盤で挟み、前記キャリアプレートを駆動機構により回転させ、かつ、前記上定盤および下定盤を回転させることにより、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨方法であって、
前記駆動機構のモータの電流値、ならびに前記上定盤および下定盤の少なくとも一方を回転させるモータの電流値のうち、少なくとも一つの電流値を測定し、
前記距離の周期的な変化に起因する電流値成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記電流値成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記電流値成分の差に基づいて、前記ワークの研磨量を制御することを特徴とするワークの研磨方法。 - キャリアプレートと、
該キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔と、
該保持孔に保持されたワークを挟み込み、研磨パッドがそれぞれ設けられた上定盤および下定盤と、
前記キャリアプレートを回転させる駆動機構、ならびに、前記上定盤および下定盤をそれぞれ回転させる一対のモータと、
を有し、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨装置であって、
前記駆動機構、前記上定盤および下定盤のトルクのうち、少なくとも一つのトルクを測定する測定部と、
前記距離の周期的な変化に起因するトルク成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記トルク成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記トルク成分の差に基づいて、前記ワークの研磨量を制御する制御部と、
を有することを特徴とするワークの研磨装置。 - キャリアプレートと、
該キャリアプレートに設けられ、その中心から離間した位置に中心を有する保持孔と、
該保持孔に保持されたワークを挟み込み、研磨パッドがそれぞれ設けられた上定盤および下定盤と、
前記キャリアプレートを回転させる駆動機構、ならびに、前記上定盤および下定盤をそれぞれ回転させる一対のモータと、
を有し、前記キャリアプレートの回転ごとに前記上定盤および下定盤の中心と前記ワークの中心との距離が周期的に変化するとともに、前記ワークの表裏面を前記研磨パッドにより同時に研磨するワークの研磨装置であって、
前記駆動機構のモータの電流値、ならびに前記上定盤および下定盤の少なくとも一方を回転させる前記一対のモータの電流値のうち、少なくとも一つの電流値を測定する測定部と、
前記距離の周期的な変化に起因する電流値成分の振幅、前記キャリアプレートが特定の回転角をとる時点での前記電流値成分、または、前記キャリアプレートが異なる特定の2つの回転角をとる時点での前記電流値成分の差に基づいて、前記ワークの研磨量を制御する制御部と、
を有することを特徴とするワークの研磨装置。
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016021094A1 (ja) * | 2014-08-05 | 2016-02-11 | 株式会社Sumco | ワークの研磨方法およびワークの研磨装置 |
WO2017073265A1 (ja) * | 2015-10-30 | 2017-05-04 | 株式会社Sumco | 半導体ウェーハの両面研磨方法及びその両面研磨装置 |
KR101759875B1 (ko) | 2015-06-24 | 2017-07-20 | 주식회사 엘지실트론 | 웨이퍼 연마장치의 스캔장치 및 스캔시스템 |
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KR20210126122A (ko) | 2019-03-22 | 2021-10-19 | 가부시키가이샤 사무코 | 워크의 양면 연마 방법 및 워크의 양면 연마 장치 |
WO2021250937A1 (ja) * | 2020-06-12 | 2021-12-16 | 株式会社Sumco | ワークの両面研磨方法、ワークの製造方法、及びワークの両面研磨装置 |
KR20220047645A (ko) | 2019-09-27 | 2022-04-18 | 가부시키가이샤 사무코 | 워크의 양면 연마 방법 |
WO2023203915A1 (ja) * | 2022-04-19 | 2023-10-26 | 株式会社Sumco | 両面研磨用キャリア及びこれを用いたシリコンウェーハの両面研磨方法及び装置 |
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Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101660900B1 (ko) * | 2015-01-16 | 2016-10-10 | 주식회사 엘지실트론 | 웨이퍼 연마 장치 및 이를 이용한 웨이퍼 연마 방법 |
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JP6707831B2 (ja) * | 2015-10-09 | 2020-06-10 | 株式会社Sumco | 研削装置および研削方法 |
JP6380333B2 (ja) * | 2015-10-30 | 2018-08-29 | 株式会社Sumco | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
CN108723986B (zh) * | 2017-04-18 | 2020-07-17 | 上海新昇半导体科技有限公司 | 抛光设备及检测方法 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0970753A (ja) * | 1995-06-28 | 1997-03-18 | Toshiba Corp | 研磨方法及び研磨装置 |
JP2002343754A (ja) * | 2001-05-15 | 2002-11-29 | Nikon Corp | 研磨装置、研磨方法およびこの研磨装置を用いた半導体デバイス製造方法 |
JP2004106123A (ja) * | 2002-09-19 | 2004-04-08 | Toshiba Corp | 研磨方法、cmp装置及び膜厚測定装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3097458A (en) * | 1960-05-13 | 1963-07-16 | Method of accurately machining semiconductor bodies | |
US3662498A (en) * | 1968-08-29 | 1972-05-16 | Peter Wolters Kratzenfabrik Un | Redressing of laps in lapping or honing machines |
US3813828A (en) * | 1973-01-05 | 1974-06-04 | Westinghouse Electric Corp | Method for controlling finished thickness of planetary-lapped parts |
JPH10202522A (ja) * | 1997-01-23 | 1998-08-04 | Sumitomo Metal Ind Ltd | 研磨方法 |
JPH11207611A (ja) * | 1998-01-21 | 1999-08-03 | Shin Etsu Handotai Co Ltd | 両面研磨装置におけるワークの自動搬送装置 |
JPH11207610A (ja) * | 1998-01-26 | 1999-08-03 | Speedfam Co Ltd | 研磨量制御システム及びその方法 |
US6302763B1 (en) * | 1998-06-29 | 2001-10-16 | Mike Buzzetti | Apparatus for polishing |
TW436382B (en) * | 1999-03-12 | 2001-05-28 | Mitsubishi Materials Corp | Wafer holding head, wafer polishing apparatus, and method for making wafers |
JP2000263401A (ja) | 1999-03-12 | 2000-09-26 | Mitsubishi Materials Corp | ウェーハ研磨装置及びウェーハ製造方法 |
DE10060697B4 (de) * | 2000-12-07 | 2005-10-06 | Siltronic Ag | Doppelseiten-Polierverfahren mit reduzierter Kratzerrate und Vorrichtung zur Durchführung des Verfahrens |
JP3991598B2 (ja) * | 2001-02-26 | 2007-10-17 | 株式会社Sumco | ウエーハ研磨方法 |
US6736705B2 (en) * | 2001-04-27 | 2004-05-18 | Hitachi Global Storage Technologies | Polishing process for glass or ceramic disks used in disk drive data storage devices |
US6431953B1 (en) | 2001-08-21 | 2002-08-13 | Cabot Microelectronics Corporation | CMP process involving frequency analysis-based monitoring |
JP2004283929A (ja) * | 2003-03-20 | 2004-10-14 | Shin Etsu Handotai Co Ltd | ウエーハ保持用キャリア並びにそれを用いた両面研磨装置及びウエーハの両面研磨方法 |
US7008308B2 (en) * | 2003-05-20 | 2006-03-07 | Memc Electronic Materials, Inc. | Wafer carrier |
JP4493286B2 (ja) | 2003-06-02 | 2010-06-30 | スピードファム株式会社 | ワークの研磨方法及び装置 |
JP4326985B2 (ja) * | 2004-03-04 | 2009-09-09 | 株式会社住友金属ファインテック | ウエーハ研磨方法 |
DE102005034119B3 (de) * | 2005-07-21 | 2006-12-07 | Siltronic Ag | Verfahren zum Bearbeiten einer Halbleiterscheibe, die in einer Aussparung einer Läuferscheibe geführt wird |
JP4777727B2 (ja) * | 2005-09-05 | 2011-09-21 | 不二越機械工業株式会社 | 研磨パッド貼り付け方法および研磨パッド貼り付け用治具 |
JP2007152499A (ja) * | 2005-12-06 | 2007-06-21 | Fujikoshi Mach Corp | ワーク研磨方法 |
JP2009028856A (ja) * | 2007-07-27 | 2009-02-12 | Tokyo Seimitsu Co Ltd | トルク変化を利用した研磨終端時点検知方法及びその装置 |
JP5245319B2 (ja) * | 2007-08-09 | 2013-07-24 | 富士通株式会社 | 研磨装置及び研磨方法、基板及び電子機器の製造方法 |
JP5076723B2 (ja) * | 2007-08-09 | 2012-11-21 | 富士通株式会社 | 研磨装置、基板及び電子機器の製造方法 |
JP2009285768A (ja) * | 2008-05-28 | 2009-12-10 | Sumco Corp | 半導体ウェーハの研削方法および研削装置 |
KR101209271B1 (ko) * | 2009-08-21 | 2012-12-06 | 주식회사 엘지실트론 | 양면 연마 장치와 양면 연마 장치용 캐리어 |
JP5099111B2 (ja) * | 2009-12-24 | 2012-12-12 | 信越半導体株式会社 | 両面研磨装置 |
SG185085A1 (en) * | 2010-04-30 | 2012-12-28 | Sumco Corp | Method for polishing silicon wafer and polishing liquid therefor |
CN102335868A (zh) * | 2010-07-16 | 2012-02-01 | 中芯国际集成电路制造(上海)有限公司 | 化学机械研磨装置以及化学机械研磨方法 |
JP2012069897A (ja) | 2010-08-27 | 2012-04-05 | Covalent Materials Corp | 半導体ウエハの研磨方法及び半導体ウエハ研磨装置 |
JP5511600B2 (ja) * | 2010-09-09 | 2014-06-04 | 株式会社荏原製作所 | 研磨装置 |
-
2013
- 2013-06-24 JP JP2014522427A patent/JP5924409B2/ja active Active
- 2013-06-24 DE DE112013003279.1T patent/DE112013003279B4/de active Active
- 2013-06-24 KR KR1020147036061A patent/KR101597158B1/ko active IP Right Grant
- 2013-06-24 US US14/405,660 patent/US9289876B2/en active Active
- 2013-06-24 WO PCT/JP2013/003935 patent/WO2014002467A1/ja active Application Filing
- 2013-06-24 CN CN201380033520.6A patent/CN104380439B/zh active Active
- 2013-06-24 TW TW102122405A patent/TWI465317B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0970753A (ja) * | 1995-06-28 | 1997-03-18 | Toshiba Corp | 研磨方法及び研磨装置 |
JP2002343754A (ja) * | 2001-05-15 | 2002-11-29 | Nikon Corp | 研磨装置、研磨方法およびこの研磨装置を用いた半導体デバイス製造方法 |
JP2004106123A (ja) * | 2002-09-19 | 2004-04-08 | Toshiba Corp | 研磨方法、cmp装置及び膜厚測定装置 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016021094A1 (ja) * | 2014-08-05 | 2016-02-11 | 株式会社Sumco | ワークの研磨方法およびワークの研磨装置 |
JP2016036857A (ja) * | 2014-08-05 | 2016-03-22 | 株式会社Sumco | ワークの研磨方法およびワークの研磨装置 |
CN107073680A (zh) * | 2014-08-05 | 2017-08-18 | 胜高股份有限公司 | 工件研磨方法及工件的研磨装置 |
KR101759875B1 (ko) | 2015-06-24 | 2017-07-20 | 주식회사 엘지실트론 | 웨이퍼 연마장치의 스캔장치 및 스캔시스템 |
WO2017073265A1 (ja) * | 2015-10-30 | 2017-05-04 | 株式会社Sumco | 半導体ウェーハの両面研磨方法及びその両面研磨装置 |
WO2019130764A1 (ja) * | 2017-12-25 | 2019-07-04 | 株式会社Sumco | ウェーハの両面研磨方法 |
JP2019114708A (ja) * | 2017-12-25 | 2019-07-11 | 株式会社Sumco | ウェーハの両面研磨方法 |
KR20200040831A (ko) | 2017-12-25 | 2020-04-20 | 가부시키가이샤 사무코 | 웨이퍼의 양면 연마 방법 |
JP6451825B1 (ja) * | 2017-12-25 | 2019-01-16 | 株式会社Sumco | ウェーハの両面研磨方法 |
DE112018006587B4 (de) | 2017-12-25 | 2023-06-22 | Sumco Corporation | Verfahren zum doppelseitigen polieren eines wafers |
US11648640B2 (en) | 2017-12-25 | 2023-05-16 | Sumco Corporation | Method of double-side polishing wafer |
JP7110877B2 (ja) | 2018-09-27 | 2022-08-02 | 株式会社Sumco | ワークの両面研磨装置および両面研磨方法 |
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DE112013003279B4 (de) | 2023-12-21 |
JP5924409B2 (ja) | 2016-05-25 |
JPWO2014002467A1 (ja) | 2016-05-30 |
KR101597158B1 (ko) | 2016-02-24 |
TWI465317B (zh) | 2014-12-21 |
US9289876B2 (en) | 2016-03-22 |
DE112013003279T5 (de) | 2015-04-16 |
CN104380439A (zh) | 2015-02-25 |
TW201408434A (zh) | 2014-03-01 |
CN104380439B (zh) | 2016-09-07 |
KR20150013883A (ko) | 2015-02-05 |
US20150165585A1 (en) | 2015-06-18 |
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