JP6380333B2 - ウェーハ研磨装置およびこれに用いる研磨ヘッド - Google Patents
ウェーハ研磨装置およびこれに用いる研磨ヘッド Download PDFInfo
- Publication number
- JP6380333B2 JP6380333B2 JP2015214606A JP2015214606A JP6380333B2 JP 6380333 B2 JP6380333 B2 JP 6380333B2 JP 2015214606 A JP2015214606 A JP 2015214606A JP 2015214606 A JP2015214606 A JP 2015214606A JP 6380333 B2 JP6380333 B2 JP 6380333B2
- Authority
- JP
- Japan
- Prior art keywords
- membrane
- wafer
- support plate
- polishing
- surface portion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
- B32B3/02—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by features of form at particular places, e.g. in edge regions
- B32B3/08—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by features of form at particular places, e.g. in edge regions characterised by added members at particular parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
Description
10 研磨ヘッド
11 回転軸
12 加圧フランジ
13 調整スペーサ
14 リテーナリング
15 支持プレート
15a 支持プレートの突起
15b 支持プレートの底面
15c 支持プレートの外周端面
15d 支持プレートの係合溝
15e 支持プレートの通気口
16 メンブレン
16a メンブレンの主面部
16b メンブレンの側面部
16c メンブレンの上面部
16d メンブレンの突起部
16e メンブレンのコーナー部
16f メンブレンの開口部
17 ドライブ伝達ピン
18 メンブレン加圧ライン
19 メンブレン高さ調整チューブ
20 メンブレン高さ調整スペーサ
21 回転定盤
22 研磨パッド
W ウェーハ
Claims (6)
- 研磨パッドが貼り付けられた回転定盤と、
前記研磨パッド上に載置されたウェーハを押圧しながら保持する研磨ヘッドとを備え、
前記研磨ヘッドは、
前記ウェーハの上面に当接して押圧力を付与するメンブレンと、
前記メンブレンを支持する支持プレートとを備え、
前記メンブレンは、前記支持プレートの底面と対向する主面部と、前記支持プレートの外周端面と対向する側面部とを有し、
前記メンブレンの前記側面部による縦方向の張力は、前記メンブレンの前記主面部による横方向の張力よりも大きいことを特徴とするウェーハ研磨装置。 - 前記支持プレートの厚み(Ph)に対する前記メンブレンの前記側面部の内側の高さ(Mh)の寸法比(Mh/Ph)は、0.75よりも大きく且つ1よりも小さい、請求項1に記載のウェーハ研磨装置。
- 前記支持プレートの直径(Pd)に対する前記メンブレンの前記主面部の内側の直径(Md)の寸法比(Md/Pd)は、0.95よりも大きく且つ1以下である、請求項1または2に記載のウェーハ研磨装置。
- 前記メンブレンは、独立に加圧制御可能な複数の加圧ゾーンに分割されることなく単一の加圧ゾーンを構成している、請求項1ないし3のいずれか一項に記載のウェーハ研磨装置。
- 前記研磨ヘッドは、前記ウェーハの外周端面に当接して前記ウェーハを水平方向の動きを規制するリテーナリングをさらに備え、
前記リテーナリングの底面は前記研磨パッドの表面に接触しない、請求項1ないし3のいずれか一項に記載のウェーハ研磨装置。 - 研磨パッドが貼り付けられた回転定盤上に載置されたウェーハを押圧しながら保持するウェーハ研磨装置の研磨ヘッドであって、
前記ウェーハの上面に当接して押圧力を付与するメンブレンと、
前記メンブレンを支持する支持プレートとを備え、
前記メンブレンは、前記支持プレートの底面と対向する主面部と、前記支持プレートの外周端面と対向する側面部とを有し、
前記メンブレンの前記側面部による縦方向の張力は、前記メンブレンの前記主面部による横方向の張力よりも大きいことを特徴とする研磨ヘッド。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015214606A JP6380333B2 (ja) | 2015-10-30 | 2015-10-30 | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
TW105132517A TWI606889B (zh) | 2015-10-30 | 2016-10-07 | 晶圓研磨裝置及用於該裝置的研磨頭 |
KR1020187011364A KR102024130B1 (ko) | 2015-10-30 | 2016-10-12 | 웨이퍼 연마 장치 및 이것에 이용하는 연마 헤드 |
US15/770,602 US10710209B2 (en) | 2015-10-30 | 2016-10-12 | Wafer polishing apparatus and polishing head used for same |
PCT/JP2016/080204 WO2017073318A1 (ja) | 2015-10-30 | 2016-10-12 | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
CN201680061781.2A CN108369903B (zh) | 2015-10-30 | 2016-10-12 | 晶圆抛光装置及用于该装置的抛光头 |
DE112016004986.2T DE112016004986B4 (de) | 2015-10-30 | 2016-10-12 | Waferpoliervorrichtung und dafür verwendeter Polierkopf |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015214606A JP6380333B2 (ja) | 2015-10-30 | 2015-10-30 | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017085045A JP2017085045A (ja) | 2017-05-18 |
JP6380333B2 true JP6380333B2 (ja) | 2018-08-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2015214606A Active JP6380333B2 (ja) | 2015-10-30 | 2015-10-30 | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
Country Status (7)
Country | Link |
---|---|
US (1) | US10710209B2 (ja) |
JP (1) | JP6380333B2 (ja) |
KR (1) | KR102024130B1 (ja) |
CN (1) | CN108369903B (ja) |
DE (1) | DE112016004986B4 (ja) |
TW (1) | TWI606889B (ja) |
WO (1) | WO2017073318A1 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6304349B1 (ja) | 2016-11-15 | 2018-04-04 | 株式会社Sumco | ウェーハのエッジ研磨装置及び方法 |
KR102057832B1 (ko) * | 2018-03-15 | 2019-12-20 | 부재필 | 웨이퍼 연마용 헤드 |
CN108818294A (zh) * | 2018-06-26 | 2018-11-16 | 长江存储科技有限责任公司 | 研磨头、研磨系统及研磨方法 |
CN109202697A (zh) * | 2018-11-20 | 2019-01-15 | 北京半导体专用设备研究所(中国电子科技集团公司第四十五研究所) | 抛光头、抛光设备以及抛光头的使用方法 |
CN109352513B (zh) * | 2018-12-13 | 2021-05-07 | 上海超硅半导体有限公司 | 一种晶圆抛光方法 |
JP7344048B2 (ja) * | 2019-08-29 | 2023-09-13 | 株式会社荏原製作所 | 弾性膜、および基板保持装置 |
KR102530102B1 (ko) | 2021-02-23 | 2023-05-09 | 그린스펙 주식회사 | 웨이퍼 연마 헤드 |
KR102530101B1 (ko) | 2021-02-23 | 2023-05-09 | 그린스펙 주식회사 | 웨이퍼 연마 헤드용 멤브레인 및 이를 구비한 웨이퍼 연마 헤드 |
JP7296173B2 (ja) * | 2021-03-17 | 2023-06-22 | ミクロ技研株式会社 | 研磨ヘッド及び研磨処理装置 |
CN116276337B (zh) * | 2023-04-23 | 2023-11-07 | 南京茂莱光学科技股份有限公司 | 一种高平整度平面玻璃加工方法及加工装置 |
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-
2015
- 2015-10-30 JP JP2015214606A patent/JP6380333B2/ja active Active
-
2016
- 2016-10-07 TW TW105132517A patent/TWI606889B/zh active
- 2016-10-12 KR KR1020187011364A patent/KR102024130B1/ko active IP Right Grant
- 2016-10-12 WO PCT/JP2016/080204 patent/WO2017073318A1/ja active Application Filing
- 2016-10-12 CN CN201680061781.2A patent/CN108369903B/zh active Active
- 2016-10-12 DE DE112016004986.2T patent/DE112016004986B4/de active Active
- 2016-10-12 US US15/770,602 patent/US10710209B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE112016004986T5 (de) | 2018-07-12 |
TWI606889B (zh) | 2017-12-01 |
CN108369903B (zh) | 2022-03-01 |
US20180311783A1 (en) | 2018-11-01 |
US10710209B2 (en) | 2020-07-14 |
KR20180056742A (ko) | 2018-05-29 |
DE112016004986B4 (de) | 2023-06-22 |
WO2017073318A1 (ja) | 2017-05-04 |
JP2017085045A (ja) | 2017-05-18 |
TW201726318A (zh) | 2017-08-01 |
KR102024130B1 (ko) | 2019-09-23 |
CN108369903A (zh) | 2018-08-03 |
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