TWM261318U - Improved carrier head for chemical mechanical polishing - Google Patents

Description

M261318 IV. Creation Instructions (1) [Technical Field to which the New Type belongs] This creation relates to chemical mechanical polishing equipment, and in particular to an improved structure of a chemical mechanical polishing grinding head. [Previous technology] The conventional chemical machine polishing (CMP) equipment is used to planarize the surface of a semiconductor wafer integrated circuit to form a surface, so that the surface of its dielectric layer is flattened to facilitate subsequent integrated circuit manufacturing processes. . The conventional chemical mechanical grinding equipment includes a grinding base having a plurality of grinding stations and a grinding head system. A grinding pad is provided on each grinding station, and a grinding slurry is provided on the grinding pads. The grinding head The system includes a plurality of polishing heads for positioning a plurality of semiconductor wafers for planarization polishing on the polishing pads. Republic of China Patent Bulletin No. 485089 "Grinding head with multi-layer fixing ring for chemical mechanical grinding" discloses a grinding head for chemical mechanical grinding, which includes a grinding base, a retaining ring (or a retaining ring) Ring), a soft membrane (membrane) and a shim (shim),

The restraint ring is arranged below the pedestal, and is used to position a semiconductor wafer under the grinding base and contact the semiconductor wafer with the soft film. The restraint ring includes a harder upper portion and a softer lower portion. The soft film is clamped by a clamp to clamp the plate from the inner edge to the edge polishing base) so that the soft film is connected to the polishing base and has a wafer bonding surface. The harder upper part of the grinding base and the restraint ring. During the chemical mechanical polishing process, the wafer bonding surface of the soft film must withstand the frictional stress of the semiconductor wafer and the polishing pad below, and the soft film will spring.

M261318____ Fourth, creation description (2) Sexual fatigue, and the inner edge of the soft film is an elastic space without being stretched and fixed by a clamp. After a long time use, the soft film's wafer bonding surface will relax. Please refer to FIG. 1. Another conventional chemical mechanical polishing grinding head system mainly includes a restraint ring 11 〇, which has an opening 111 ′ for limiting a semiconductor wafer and a polishing base. A support plate 120 is provided in the opening iu of the restraint ring 110. The support plate 120 has an inner surface 121, an outer surface 122, and a ring side wall 123 between the inner surface 121 and the outer surface 122. A soft film 130 covers the outer surface 1 2 2 of the support plate 120 and extends along the ring side wall 1 2 3 to the periphery of the inner surface 1 21. The soft film 130 has a fastening flange 131, which is It fits into the fastening groove 125 on the inner surface 121, wherein the inner surface 21 and the ring side wall 23 and the outer surface 122 and the ring side 23 23 are at right angles 124, and the soft film 130 At the right angle 124, there is a corresponding outer surface protruding portion 132. In the normal state of initial use, a polishing head presses a semiconductor wafer on a polishing pad to drive the wafer to rotate for chemical mechanical polishing. The soft film is used. 3 〇The upper edge outer surface protrusion 1 3 2 can prevent the soft film 1 3 0 The contacted semiconductor wafer is stretched. However, after a period of chemical mechanical polishing, please refer to FIG. 2. Once the protruding portion 132 on the outer surface of the soft film 130 is pulled and caught on the side wall 123 of the ring of the support plate 120. Between the inner wall of the ring of restraint 11 and the protruding portion of the outer surface of the soft film 130 cannot be restored to position, which will cause abrasive particles to collect on the side wall 123 of the ring 12 of the support plate and the restraint ring 11 The outer surface protrusions between the inner walls of the ring 32 have a hardened blockage, making the soft film 130 unable to elastically reset and fail, and one of the soft films 3

M261318 IV. Creation instructions (3) The protruding portion 132 on the outer surface will be exposed on the outer surface 122 of the support plate 20, and can no longer be pressed against the semiconductor wafer. It is often necessary to stop the machine to replace the support plate ... 120 and the soft film ΐ3 〇〇 、 Λ [New content] The main purpose of a book is to provide an improved structure of a chemical mechanical polishing grinding head. A support disk is set in an opening of a retaining ring and one of them A soft film is coated on the outer surface, and an arc angle is formed between the inner surface of the support disk and the side wall of the ring, and the soft film follows the arc angle of the support disk so that the soft film has a uniform thickness at the arc, so that After the soft film is stretched to the inner wall of the restraint ring, it can be elastically reset, and the particles of the grinding slurry can be reduced to collect between the side wall of the ring of the support plate and the inner wall of the ring of the restraint ring. . The improved structure of the chemical-mechanical abrasive grinding head created in accordance with this book is mainly composed of a restraint ring and a crystal back support assembly. The restraint ring is combined with the base of the grinding head, and the restraint ring has an opening. The crystal back support assembly is installed in the opening of the restraint ring. The crystal back support assembly includes a support plate and a membrane. The support disk system has an inner surface, an outer surface, and an inner surface. A ring side wall between the inner surface and the outer surface, wherein an arc angle is formed between the inner surface and the ring side wall, a buckle groove is formed on the periphery of the inner surface, and the soft film has a wafer bonding surface, A ring-shaped covering portion and a buckle flange, the wafer bonding surface is formed on the outer surface of the support plate, the ring-shaped covering portion covers the ring side wall of the support plate, so that The fitting flange fits into the fastening groove of the support plate, and the soft film follows the arc angle of the pushing plate so that the soft film has a uniform thickness at the arc angle.

HI Page 11 M261318

Degree 0 [Embodiment] ^ Read the attached drawings, this creation will enumerate the following examples. Please refer to FIG. 3. According to a specific embodiment of the present invention, an improved structure of a polishing head of a chemical machine mainly includes a restraint ring 21 and a crystal back support assembly. The restraint ring 210 is combined with the base of the grinding head. The base of the grinding head can be an existing mechanism, which can be rotated on a research pad. The detailed combined structure is not described here. The restraint ring 210 has an opening 211, and the opening 211 is formed. A straight ring inner wall 2 1 2 'preferably' the restraint ring 2 丨 〇 is composed of a hard upper ring portion 2 丨 3 and a soft lower mounting portion 2 1 4. The hard upper ring portion 2 丨 3 may be Hard metal = The soft lower ring 214 is a pps plastic material that can be worn. The crystal back support assembly is connected to the support frame of the base of the grinding head and is installed in the opening 211 of the restraint ring 2 1 0. .

The crystal back support assembly includes a support plate 220 and a soft film 230. The support building 220 has an inner surface mi, an outer surface 222, and a ring side wall 223 between the inner surface 221 and the outer surface 222. An arc angle 224 is formed between the inner surface 221 and the ring side wall 223, and a fastening groove 225 is formed around the inner surface 221. In this embodiment, the fastening groove 225 is a circular arc groove. A positive angle 226 is formed between the outer surface 222 and the ring side wall 223. The soft film 230 has a wafer bonding surface 231, a ring-shaped covering portion 232, and a fastening flange 233. The wafer bonding surface 231 is formed on the outer surface 222 of the support plate 220. The covering portion 232 is a package: covering the ring side wall 223 of the flapping plate 220 so that the fastening flange 233 fits on the

Page 12 M261318 IV. Creation instructions (5) The engaging groove 225 of the support plate 22G, and the soft film 230 conforms to the arc angle 224 of the support plate 220 so that the soft film 230 has a uniform thickness at the arc angle 224 The outer surface is compliant with the portion 2 3 4. Therefore, the soft film 2 3 0 does not have a protruding portion on the outer surface between the inner surface 2 21 and the ring side wall 2 2 3 to facilitate elastic restoration. In addition, preferably, the soft film 230 is an arc angle 235 on the surface portion corresponding to the right angle 226 of the support plate 220, and the radius of the arc angle 235 should be smaller than the bending radius of the compliance portion 2 34 of the outer surface of the soft film 230. Therefore, please refer to FIG. 4. The improved structure of the above-mentioned chemical-mechanical polishing head is subjected to excessive stress even after grinding for a long time in the chemical mechanism or during grinding, which causes the soft film 2 30 to partially slide, and the soft film 2 3 0 The outer surface compliance portion 234 can smoothly slide out from the inner wall 21 2 of the ring of restraint ring 21 and the side wall 223 of the ring of the building 220, and the fastening flange 233 of the soft film 23 can be reset to the support. The fastening groove 225 of the disc 220 will not collect the abrasive slurry particles between the side wall 223 of the ring 220 of the support building 220 and the inner wall 212 of the ring 21 of the restraint ring, which solves the problem that the conventional slurry gathers in the ring 21 The ring inner wall 2 1 2 has a problem of hardening and blocking. The scope of protection of this creation shall be determined by the scope of the attached patent application. Any changes and modifications made by those skilled in the art without departing from the spirit of this creation are within the scope of this creation.

M261318 _ Simple schematic diagram ^ —— [Schematic description] Figure 1: Partial cross-sectional schematic diagram of a conventional chemical mechanical polishing grinding head; Figure 2: A conventional chemical mechanical polishing grinding head produces a defect after grinding Partial cross-section schematic diagram; Figure 3 ·· A partial cross-sectional schematic diagram of an improved structure of a chemical mechanical polishing grinding head according to the present creation; and FIG. 4: According to this creation, the chemical mechanical polishing grinding head's improved structure remains after grinding A schematic diagram of a partial cross section that can be used. Element symbol brief description 110 restraint ring 120 support plate 123 ring side wall 130 soft film 2 1 0 restraint ring 2 1 3 rigid upper ring 220 support plate 223 ring side wall 226 right angle 230 soft film 233 snap flange 111 opening 121 inner surface 124 right angle 1 31 Fastening flange 211 Opening 2 1 4 Soft lower ring portion 221 Inner surface 224 Arc angle 231 Wafer joint surface 234 Outer surface compliance portion 1 2 2 Outer surface 1 2 5 Fastening groove 132 Outer surface protruding portion 21 2 Ring inner wall 222 outer surface 2 2 5 snap groove 232 ring-shaped covering part 2 3 5 arc angle

Claims (1)

M261318__ 5. Scope of patent application [Scope of patent application] 1. An improved structure of a chemical mechanical polishing grinding head, including: a retaining ring, which is coupled to the base of the grinding head, and the restraining ring has a Opening; a support disk (set in the opening of the restraint ring), the push disk has an inner surface, an outer surface, and the side wall of the ring between the inner surface and the β outer surface, The inner surface and the ring side wall are isolated angles. The periphery of the inner surface is formed with a fastening groove; and a soft membrane (membrane) having a wafer bonding surface and an annular covering portion And a snap flange, the wafer bonding surface is formed on the outer surface of the support plate, and the ring-shaped covering portion covers the ring side wall of the support plate, so that the snap flange fits on The buckling grooves of the supporting disc, and the soft film conforms to the arc angle of the supporting disc so that the soft film has a uniform degree at the arc angle. 2. The improved structure of the chemical mechanical polishing grinding head described in item 1 of the scope of the patent application, wherein the fastening groove of the support plate is an arc groove. 3. The chemical-mechanical polishing head according to item 1 of the scope of the patent application. Improved structure 'wherein the outer surface of the support disc and the side wall of the ring are at right angles. 4. The improved structure of the grinding head φ for chemical mechanical grinding as described in item 3 of the scope of the patent application, wherein the soft film has an arc angle at the surface portion corresponding to the right angle of the support disk. 5. The improved structure of the chemical-mechanical grinding head described in item 丨 of the patent application scope, wherein the restraint ring system includes an upper ring hard part and a lower ring soft Page 15 M261318 Quality Department. 6. A crystal back support group of a chemical mechanical polishing head is installed in a restraint ring, which includes: a support disk (SUpport disk), which has an inner surface, an outer surface, and the inner surface and the A ring side wall between the outer surfaces, wherein an arc angle is formed between the inner surface and the ring side wall, a periphery of the inner surface is formed with a fastening groove; and a soft membrane (membrane) having a wafer bonding surface A ring-shaped cladding portion and a buckle flange, the wafer bonding surface is formed on the support plate, and on the surface, the ring-shaped cladding portion covers the ring side wall of the support plate, so that the buckle The fitting flange is attached to the engaging groove of the supporting plate, and the soft film is compliant. The arc angle of the helium is such that the soft film has a uniform thickness at the arc angle. 7. The chemical-mechanical polishing head and crystal back support assembly according to item 6 of the scope of the patent application, wherein the fastening groove of the support disc is an arc groove. 8. The crystal back support assembly of the chemical mechanical polishing head as described in item 6 of the patent scope of Shenyan, wherein the outer surface of the support disc and the side wall of the ring are h ° '..., as described in item 8 of the patent scope of Shenyan According to the crystal back support assembly of the CMP head, the soft film has an arc angle on the outer surface corresponding to the right angle of the support disk. ° 1 standing