JP2009010227A - Wafer deformation suppressing device and method for preventing deformation of wafer - Google Patents

Wafer deformation suppressing device and method for preventing deformation of wafer Download PDF

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JP2009010227A
JP2009010227A JP2007171119A JP2007171119A JP2009010227A JP 2009010227 A JP2009010227 A JP 2009010227A JP 2007171119 A JP2007171119 A JP 2007171119A JP 2007171119 A JP2007171119 A JP 2007171119A JP 2009010227 A JP2009010227 A JP 2009010227A
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wafer
deformation
polishing
reinforcing member
retainer ring
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Hiroshi Kobayashi
拓 小林
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Tokyo Seimitsu Co Ltd
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Tokyo Seimitsu Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To suppress the deformation of the peripheral edge of a wafer and to prevent a failure such as the over polishing of the wafer caused by the deformation. <P>SOLUTION: In a polishing head 13 polishing the wafer W pressed against a polishing pad 16 thereof, the reinforcement member 22A of circular shape in a plan view whose inner diameter is substantially equal to the diameter of the wafer W is applied to the top surface of the wafer W with the adhesive 21. The reinforcement member 22A is formed in a substantially inverted dish shape (or in a flat plate shape), and the wafer W is engaged to the inside of the reinforcement member 22A. Polishing the wafer W attached to the reinforcement member 22A helps suppress the buckling distortion and the like of the peripheral edge of the wafer W caused when the wafer W comes into contact or collision with the retainer ring 19 while it is being polished. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明はウェーハ変形抑制装置及びウェーハ変形抑制方法に関するものであり、特に、ウェーハを研磨パッドに押し付けて研磨するCMP装置におけるウェーハ変形抑制装置及びウェーハ変形抑制方法に関するものである。   The present invention relates to a wafer deformation suppression device and a wafer deformation suppression method, and more particularly to a wafer deformation suppression device and a wafer deformation suppression method in a CMP apparatus that polishes a wafer by pressing the wafer against a polishing pad.

従来、此種CMP装置は、ウェーハをプラテン上の研磨パッドに押し付けて研磨するための研磨ヘッドを備えている。該研磨ヘッド1は、図8に示すように、エア圧によりウェーハWを保持するキャリア2と、該キャリア2の下側に設けられた弾性シート3と、前記キャリア2の下部外周部に設けられた円環状のリテーナリング4等により構成されている。而して、CMP加工時には、該研磨ヘッド1に保持されたウェーハWを、回転するプラテン5上の研磨パッド6に押し付けるとともに、該研磨パッド6上面に研磨剤を供給して研磨している。   Conventionally, this type of CMP apparatus includes a polishing head for polishing a wafer by pressing it against a polishing pad on a platen. As shown in FIG. 8, the polishing head 1 is provided on a carrier 2 that holds the wafer W by air pressure, an elastic sheet 3 provided on the lower side of the carrier 2, and a lower outer peripheral portion of the carrier 2. An annular retainer ring 4 or the like is used. Thus, during the CMP process, the wafer W held by the polishing head 1 is pressed against the polishing pad 6 on the rotating platen 5, and the polishing agent is supplied to the upper surface of the polishing pad 6 for polishing.

このように、CMP加工時、ウェーハWは円環状のリテーナリング4によって包囲されて、回転する研磨パッド6上面にリテーナリング4と共に押し付けて研磨される。この研磨時、ウェーハW外周面とリテーナリング4内周面の間には若干の隙間Cが形成されているので、研磨パッド6の回転力によりウェーハWは、リテーナリング4内で研磨パッド6の回転方向に移動できるように保持されている(例えば、特許文献1参照)。
特開2003−124169号公報
As described above, during the CMP process, the wafer W is surrounded by the annular retainer ring 4 and is pressed against the upper surface of the rotating polishing pad 6 together with the retainer ring 4 to be polished. At the time of this polishing, a slight gap C is formed between the outer peripheral surface of the wafer W and the inner peripheral surface of the retainer ring 4, so that the wafer W is moved inside the retainer ring 4 by the rotational force of the polishing pad 6. It is held so that it can move in the rotational direction (see, for example, Patent Document 1).
JP 2003-124169 A

上記従来技術においては、CMP処理中に、ウェーハWはリテーナリング4内で研磨パッド6の回転方向に移動する。その結果、ウェーハWの外周側面がリテーナリング4の内周側面に接触・衝突し、その時の衝撃力(変形力)によりウェーハWに変形が発生する。この場合、特に、ウェーハWの外周縁部に変形力が顕著に作用して、座屈変形又は反り変形(歪み変形を含む)を発生させる。図9は変形後のウェーハWの形状を例示するものであって、例えば、ウェーハW全体の形状は、上方に凸の弓状又は折曲状に変形する。   In the above prior art, the wafer W moves in the rotation direction of the polishing pad 6 in the retainer ring 4 during the CMP process. As a result, the outer peripheral side surface of the wafer W contacts and collides with the inner peripheral side surface of the retainer ring 4, and the wafer W is deformed by the impact force (deformation force) at that time. In this case, in particular, the deforming force is remarkably applied to the outer peripheral edge portion of the wafer W to generate buckling deformation or warping deformation (including distortion deformation). FIG. 9 illustrates the shape of the deformed wafer W. For example, the entire shape of the wafer W is deformed into an upwardly convex arcuate shape or a bent shape.

更に、前記ウェーハWの変形に伴い、ウェーハWの研磨表面における圧力分布が不均等になる。これにより、特に、ウェーハWの外周部の研磨速度(研磨レート)が増大して、研磨後のウェーハに過剰研磨等の欠陥が発生する。このため、図10中の斜線部にて例示するように、ウェーハWの外周縁部にリング状の研磨不良領域(過研磨領域)Eが発生し、その分だけウェーハWの有効面積が減少する。   Furthermore, with the deformation of the wafer W, the pressure distribution on the polished surface of the wafer W becomes uneven. Thereby, in particular, the polishing rate (polishing rate) of the outer peripheral portion of the wafer W is increased, and defects such as excessive polishing occur in the polished wafer. For this reason, as illustrated by the hatched portion in FIG. 10, a ring-shaped poor polishing region (overpolishing region) E occurs at the outer peripheral edge of the wafer W, and the effective area of the wafer W is reduced accordingly. .

尚、ウェーハWの変形現象について補足説明すれば、ウェーハWの任意の箇所において、リテーナリング4に接するウェーハWの外周部分が最も変形現象が発生し易く、ウェーハW中心部は、衝突時の外力(変形する際にウェーハWに発生する応力と略同等の大きさの外力)を受ける部分から十分離れているため、該外力によるウェーハWの変形量は小さいと考えられる。又、衝突時にウェーハWに発生した応力は、リテーナリング4の単位面積当たりの反力の大きさに相当する。従って、リテーナリング4と接触する面積又は領域が広いほど、ウェーハWの応力、即ち、ウェーハWに作用する変形力が小さくなる。   In addition, if it explains supplementarily about the deformation | transformation phenomenon of the wafer W, the outer periphery part of the wafer W which contact | connects the retainer ring 4 will generate | occur | produce the deformation | transformation phenomenon most easily in arbitrary places of the wafer W, and the wafer W center part is external force at the time of a collision. It is considered that the amount of deformation of the wafer W due to the external force is small because it is sufficiently away from the part that receives (an external force having a magnitude substantially equal to the stress generated on the wafer W when it is deformed). Further, the stress generated in the wafer W at the time of collision corresponds to the magnitude of the reaction force per unit area of the retainer ring 4. Accordingly, the larger the area or region in contact with the retainer ring 4, the smaller the stress of the wafer W, that is, the deformation force acting on the wafer W.

そこで、研磨時におけるウェーハの外周縁部の変形を抑制すると共に、該変形によるウェーハの過剰研磨等の欠陥を防止するために解決すべき技術的課題が生じてくるのであり、本発明はこの課題を解決することを目的とする。   Thus, there is a technical problem to be solved in order to suppress the deformation of the outer peripheral edge of the wafer during polishing and to prevent defects such as excessive polishing of the wafer due to the deformation. It aims at solving.


本発明は上記目的を達成するために提案されたものであり、請求項1記載の発明は、リテーナリングで包囲されたウェーハを研磨パッドに押し付けて研磨するCMP装置におけるウェーハ変形抑制装置であって、前記ウェーハの上面に該ウェーハ径と略同等の直径を有する平面視円形の補強部材が貼り付けられ、該補強部材を前記ウェーハに貼り付けたまま該ウェーハを研磨するように構成して成るウェーハ変形抑制装置を提供する。

The present invention has been proposed to achieve the above object, and the invention according to claim 1 is a wafer deformation suppressing device in a CMP apparatus for polishing a wafer surrounded by a retainer ring by pressing it against a polishing pad. A wafer having a configuration in which a circular reinforcing member having a diameter substantially equal to the diameter of the wafer is attached to the upper surface of the wafer, and the wafer is polished while the reinforcing member is attached to the wafer. A deformation suppressing device is provided.

この構成によれば、補強部材はウェーハ径と略同等の直径を有し、貼着材を介してウェーハ上面に一体に貼り付けられる。従って、研磨時にウェーハが移動してリテーナリングに衝突しても、該リテーナリングからウェーハに作用する変形力は補強部材により緩和吸収される。その結果、ウェーハに作用する衝撃力に対する耐性強度が実質的に増大する。   According to this configuration, the reinforcing member has a diameter substantially equal to the wafer diameter, and is integrally attached to the upper surface of the wafer via the adhesive material. Therefore, even when the wafer moves during polishing and collides with the retainer ring, the deformation force acting on the wafer from the retainer ring is relaxed and absorbed by the reinforcing member. As a result, the resistance strength against the impact force acting on the wafer is substantially increased.

請求項2記載の発明は、上記補強部材が上記ウェーハに被着可能な略逆皿状に形成されている請求項1記載のウェーハ変形抑制装置を提供する。   According to a second aspect of the present invention, there is provided the wafer deformation suppressing device according to the first aspect, wherein the reinforcing member is formed in a substantially inverted dish shape that can be attached to the wafer.

この構成によれば、補強部材は略逆皿状、即ち、上面部を有する断面凹型の略逆皿形状に形成され、ウェーハに被着して固定される。従って、ウェーハの外周部は補強部材の外周側面によって包囲される。そのため、研磨中にウェーハが径方向に移動した場合は、リテーナリング内周面に補強部材の外周側面が接触し、ウェーハの外周側面はリテーナリング内周面に接触しない。また、リテーナリングに対する補強部材の接触面積(接触領域)は、ウェーハがリテーナリングに直接接触したときの面積に比べて広くなる。   According to this configuration, the reinforcing member is formed in a substantially inverted dish shape, that is, a substantially inverted dish shape having a concave cross section having an upper surface portion, and is attached to the wafer and fixed. Therefore, the outer peripheral portion of the wafer is surrounded by the outer peripheral side surface of the reinforcing member. For this reason, when the wafer moves in the radial direction during polishing, the outer peripheral side surface of the reinforcing member contacts the inner peripheral surface of the retainer ring, and the outer peripheral side surface of the wafer does not contact the inner peripheral surface of the retainer ring. Further, the contact area (contact area) of the reinforcing member with respect to the retainer ring is larger than the area when the wafer is in direct contact with the retainer ring.

請求項3記載の発明は、上記補強部材がウェーハ径よりも大径の円形平板状に形成され、該補強部材の外周縁部が前記ウェーハの外側に突出している請求項1記載のウェーハ変形抑制装置を提供する。   According to a third aspect of the present invention, the reinforcing member is formed in a circular flat plate shape having a diameter larger than the wafer diameter, and the outer peripheral edge of the reinforcing member protrudes outside the wafer. Providing equipment.

この構成によれば、補強部材の直径はウェーハ径よりも若干大きく形成され、該補強部材の外周縁部がウェーハの外周側に所定寸法だけ突出する。従って、研磨中にウェーハが移動した際は、リテーナリングの内周面に補強部材の外周縁部が直接接触し、ウェーハの外周縁部は接触しない。   According to this configuration, the diameter of the reinforcing member is formed to be slightly larger than the wafer diameter, and the outer peripheral edge of the reinforcing member protrudes to the outer peripheral side of the wafer by a predetermined dimension. Therefore, when the wafer moves during polishing, the outer peripheral edge of the reinforcing member directly contacts the inner peripheral surface of the retainer ring, and the outer peripheral edge of the wafer does not contact.

請求項4記載の発明は、上記貼着材が粘着テープ、ワックス等の弾性力を有する貼着材である請求項1記載のウェーハ変形抑制装置を提供する。   According to a fourth aspect of the present invention, there is provided the wafer deformation suppressing device according to the first aspect, wherein the adhesive material is an adhesive material having elasticity such as an adhesive tape and wax.

この構成によれば、貼着材は粘着テープ、ワックス等の弾性力を有する軟質部材から成り、該貼着材を介してウェーハ上面に補強部材が貼り付けられる。従って、貼着材は補強部材とウェーハの間において高い緩衝吸収機能を発揮して、該ウェーハに作用する変形力が吸収除去される。その結果、ウェーハ研磨面全域における圧力分布が均一化し、ウェーハ上面(裏面)の平面度が常に維持される。   According to this configuration, the adhesive material is made of a soft member having elasticity such as an adhesive tape and wax, and the reinforcing member is attached to the upper surface of the wafer through the adhesive material. Therefore, the adhesive material exhibits a high buffer absorption function between the reinforcing member and the wafer, and the deformation force acting on the wafer is absorbed and removed. As a result, the pressure distribution over the entire wafer polishing surface is made uniform, and the flatness of the wafer upper surface (back surface) is always maintained.

請求項5記載の発明は、リテーナリングで包囲されたウェーハを研磨パッドに押し付けて研磨するCMP装置におけるウェーハ変形抑制方法であって、前記ウェーハの上面に該ウェーハ径と略同径の直径を有する平面視円形の補強部材を貼着材を介して貼り付ける工程と、前記ウェーハに前記補強部材を貼り付けたまま研磨する工程とを含み、研磨時に前記リテーナリングから前記ウェーハに作用する変形力を前記補強部材により吸収するウェーハ変形抑制方法を提供する。   The invention according to claim 5 is a wafer deformation suppressing method in a CMP apparatus for polishing by pressing a wafer surrounded by a retainer ring against a polishing pad, the upper surface of the wafer having a diameter substantially equal to the diameter of the wafer. A step of affixing a reinforcing member having a circular shape in plan view through an adhesive material, and a step of polishing the wafer while the reinforcing member is affixed to the wafer, and a deforming force acting on the wafer from the retainer ring during polishing. A method for suppressing wafer deformation absorbed by the reinforcing member is provided.

この方法によれば、補強部材はウェーハ径と略同等の直径を有し、貼着材を介してウェーハ上面に一体に貼り付けられる。従って、研磨時にウェーハが移動してリテーナリングに衝突しても、該リテーナリングからウェーハに作用する変形力は補強部材により効果的に緩和吸収される。その結果、ウェーハに作用する衝撃力に対する耐性強度が実質的に増大する。   According to this method, the reinforcing member has a diameter substantially equal to the diameter of the wafer, and is integrally attached to the upper surface of the wafer via the adhesive material. Therefore, even if the wafer moves during the polishing and collides with the retainer ring, the deformation force acting on the wafer from the retainer ring is effectively relaxed and absorbed by the reinforcing member. As a result, the resistance strength against the impact force acting on the wafer is substantially increased.

請求項1記載の発明は、研磨時にウェーハが移動してリテーナリングに衝突した場合でも、リテーナリングからウェーハに作用する変形力が補強部材により吸収除去されるので、リテーナリングとの接触・衝撃によるウェーハの研磨形状の変形、特に、該ウェーハの外周縁部の座屈変形を抑制することができると共に、該変形によるウェーハ外周縁部の研磨不良を防止することができる。   According to the first aspect of the present invention, even when the wafer moves and collides with the retainer ring during polishing, the deformation force acting on the wafer from the retainer ring is absorbed and removed by the reinforcing member. The deformation of the polished shape of the wafer, in particular, the buckling deformation of the outer peripheral edge of the wafer can be suppressed, and poor polishing of the outer peripheral edge of the wafer due to the deformation can be prevented.

請求項2記載の発明は、ウェーハに略逆皿状の補強部材を被着することにより、リテーナリングからウェーハに作用する衝撃力が低減されるので、請求項1記載の発明の効果に加えて、リテーナリングとの接触によるウェーハ外周縁部の変形をより確実に抑制することができる。   According to the second aspect of the present invention, the impact force acting on the wafer from the retainer ring is reduced by attaching the substantially inverted dish-shaped reinforcing member to the wafer. Therefore, in addition to the effect of the first aspect of the invention, The deformation of the outer peripheral edge of the wafer due to the contact with the retainer ring can be more reliably suppressed.

請求項3記載の発明は、研磨中にウェーハが移動した場合、リテーナリング内周面には補強部材の外周縁部が直接接触するので、請求項1記載の発明の効果に加えて、リテーナリングから受ける衝撃力は補強部材の外周縁部により効率良く吸収でき、ウェーハ外周縁部に対する変形抑制効果が増大するメリットを有する。   According to the third aspect of the present invention, when the wafer moves during polishing, the outer peripheral edge portion of the reinforcing member is in direct contact with the inner peripheral surface of the retainer ring. In addition to the effect of the first aspect, the retainer ring The impact force received from the outer peripheral edge of the reinforcing member can be efficiently absorbed, and there is a merit that the deformation suppressing effect on the outer peripheral edge of the wafer is increased.

請求項4記載の発明は、弾性力を有する軟質の貼着材による衝撃吸収機能により、ウェーハの研磨圧力分布が均一化して、ウェーハ裏面の平面度を常に良好に維持できるので、請求項1記載の発明の効果に加えて、ウェーハの反り等の変形を一層確実に抑制することができる。   According to the invention described in claim 4, since the impact-absorbing function by the soft adhesive material having elasticity is used, the polishing pressure distribution of the wafer is made uniform, and the flatness of the back surface of the wafer can always be kept good. In addition to the effects of the present invention, deformation such as warpage of the wafer can be more reliably suppressed.

請求項5記載の発明は、研磨時にウェーハが移動してリテーナリングに衝突した場合でも、リテーナリングからウェーハに作用する変形力が補強部材により吸収されるので、リテーナリングとの接触・衝撃によるウェーハの変形、特に、該ウェーハの外周縁部の座屈変形を抑制することができると共に、該変形によるウェーハ外周縁部の研磨不良を防止することができる。   According to the fifth aspect of the present invention, even when the wafer moves during polishing and collides with the retainer ring, the deformation force acting on the wafer from the retainer ring is absorbed by the reinforcing member. In particular, buckling deformation of the outer peripheral edge portion of the wafer can be suppressed, and poor polishing of the outer peripheral edge portion of the wafer due to the deformation can be prevented.

本発明はウェーハの外周縁部の変形を抑制すると共に、該変形による過剰研磨を防止するという目的を達成するため、リテーナリングで包囲されたウェーハを研磨パッドに押し付けて研磨するCMP装置におけるウェーハ変形抑制装置であって、前記ウェーハの上面に該ウェーハ径と略同等の直径を有する平面視円形の補強部材が貼り付けられ、該補強部材を前記ウェーハに貼り付けたまま該ウェーハを研磨し、前記リテーナリングから前記ウェーハに作用する変形力を前記補強部材により吸収させることによって実現した。   The present invention suppresses deformation of the outer peripheral edge of a wafer and achieves the object of preventing overpolishing due to the deformation. In order to achieve the object, wafer deformation in a CMP apparatus that polishes a wafer surrounded by a retainer ring against a polishing pad. In the suppressing device, a circular reinforcing member having a diameter substantially equal to the wafer diameter is attached to the upper surface of the wafer, and the wafer is polished while the reinforcing member is attached to the wafer. This was realized by absorbing the deformation force acting on the wafer from the retainer ring by the reinforcing member.

以下、本発明の好適な一実施例を図1乃至図7に従って説明する。本実施例は、特に、ウェーハの外周縁部の形状変形による過研磨等の悪影響を簡易な構成によってキャンセルするため、ウェーハ上面に補強部材を接着テープ等で貼り付けて研磨することにより、研磨中にリテーナリングとの接触・衝撃によるウェーハ外周縁部の変形を効率良く抑制又は防止するように構成したものである。   Hereinafter, a preferred embodiment of the present invention will be described with reference to FIGS. In this example, in particular, in order to cancel the adverse effects such as over-polishing due to the shape deformation of the outer peripheral edge of the wafer with a simple configuration, the reinforcing member is adhered to the upper surface of the wafer with an adhesive tape or the like and polished. In addition, deformation of the outer peripheral edge of the wafer due to contact / impact with the retainer ring is efficiently suppressed or prevented.

前記補強部材としては、例えば、ウェーハが嵌着可能な上面部を有する略逆皿形状(以下「シャーレ形状」という。)に形成したもの、或いは、ウェーハ形状と対応する円形の平板状に形成したものなどを採用できるが、ウェーハに貼り付けて該ウェーハ外周縁部の変形を抑制できれば、補強部材の形状等は任意である。   As the reinforcing member, for example, a member formed in a substantially inverted dish shape (hereinafter referred to as a “petri dish shape”) having an upper surface portion on which a wafer can be fitted, or a circular flat plate corresponding to the wafer shape is formed. Although a thing etc. can be employ | adopted, if it affixes on a wafer and the deformation | transformation of this wafer outer periphery part can be suppressed, the shape etc. of a reinforcement member are arbitrary.

図1はCMP装置11の概略を示す斜視図である。同図において、CMP装置11は、主に円盤状のプラテン12と研磨ヘッド13とから構成されている。該プラテン12の下面中央には回転軸14が連結され、回転軸14はモータ15の駆動によって矢印A方向へ回転する。又、前記プラテン12の上面には研磨パッド16が貼着され、該研磨パッド16上に図示しないノズルから研磨剤が供給される。   FIG. 1 is a perspective view showing an outline of the CMP apparatus 11. In the figure, a CMP apparatus 11 is mainly composed of a disk-shaped platen 12 and a polishing head 13. A rotating shaft 14 is connected to the center of the lower surface of the platen 12, and the rotating shaft 14 rotates in the direction of arrow A by driving a motor 15. A polishing pad 16 is attached to the upper surface of the platen 12, and a polishing agent is supplied onto the polishing pad 16 from a nozzle (not shown).

前記研磨ヘッド13の下面部は、図2に示すように、主としてウェーハWを保持するためのキャリア17と、該キャリア17の下側に設けられた円形の弾性シート18と、前記キャリア17の下部外周部に設けられた円環状のリテーナリング19等により構成され、該リテーナリング19の下面には複数の研磨剤用の溝部(図示せず)が形成されている。   As shown in FIG. 2, the lower surface of the polishing head 13 includes a carrier 17 for mainly holding the wafer W, a circular elastic sheet 18 provided below the carrier 17, and a lower portion of the carrier 17. An annular retainer ring 19 or the like provided on the outer peripheral portion is formed, and a plurality of grooves (not shown) for abrasives are formed on the lower surface of the retainer ring 19.

尚、図1に示すように、研磨ヘッド13の上面中央部には回転軸20が連結され、該回転軸20は、モータ駆動により図1の矢印B方向に回転する。   As shown in FIG. 1, a rotating shaft 20 is connected to the center of the upper surface of the polishing head 13, and the rotating shaft 20 rotates in the direction of arrow B in FIG.

また、図2に示すように、前記キャリア17の下面には、弾性シート18上側にエアを加圧噴射するためのエア吹出し口(図示せず)と、バキューム及び必要により純水(DIW)又はエアを吹き出すための孔(図示せず)が形成されている。   As shown in FIG. 2, the lower surface of the carrier 17 has an air outlet (not shown) for pressure-injecting air onto the upper side of the elastic sheet 18, a vacuum and, if necessary, pure water (DIW) or A hole (not shown) for blowing out air is formed.

更に、キャリア17下側に配設された弾性シート18は、湾曲可能なゴム等の軟質材料から成り、リテーナリング19の内側に張設されている。該弾性シート18の適所には複数の孔(図示せず)が開穿され、該孔はウェーハ搬送時にはウェーハ吸着用孔として機能し、又、研磨時にはウェーハWを押圧するためのエア圧供給用孔として機能する。   Further, the elastic sheet 18 disposed below the carrier 17 is made of a soft material such as a bendable rubber and is stretched inside the retainer ring 19. A plurality of holes (not shown) are opened at appropriate positions of the elastic sheet 18, and the holes function as wafer suction holes when the wafer is transferred, and for supplying air pressure for pressing the wafer W during polishing. Functions as a hole.

次に、本発明に係るウェーハ変形抑制機能を有する補強部材について詳述する。図2において、符号22Aは、適度な剛性強度と厚さを有する平面視円形の補強部材であり、該補強部材22Aは合成樹脂等から成り、ウェーハWの上面に粘着テープ等の貼着材21を介して一体に貼り付けられている。ウェーハWは、研磨時、補強部材22Aを貼り付けたまま研磨パッド16に押し付けて研磨される。   Next, the reinforcing member having a wafer deformation suppressing function according to the present invention will be described in detail. In FIG. 2, reference numeral 22 </ b> A is a circular reinforcing member having an appropriate rigidity and thickness in a plan view. The reinforcing member 22 </ b> A is made of a synthetic resin or the like, and an adhesive material 21 such as an adhesive tape on the upper surface of the wafer W. It is pasted together through. The wafer W is polished by being pressed against the polishing pad 16 while the reinforcing member 22A is adhered.

補強部材22Aは、上面部を有するシャーレ形状に形成され、補強部材22Aの外周縁部23A下面側にはリング状リブ部24Aが設けられている。該リング状リブ部24Aの下面はウェーハWの下面と面一になるように形成されている。更に、リング状リブ部24Aの内径はウェーハ径と略同等に設定され、該リング状リブ部24Aの内側にウェーハWが嵌合装着されている。   The reinforcing member 22A is formed in a petri dish having an upper surface portion, and a ring-shaped rib portion 24A is provided on the lower surface side of the outer peripheral edge portion 23A of the reinforcing member 22A. The lower surface of the ring-shaped rib portion 24A is formed to be flush with the lower surface of the wafer W. Further, the inner diameter of the ring-shaped rib portion 24A is set substantially equal to the wafer diameter, and the wafer W is fitted and mounted inside the ring-shaped rib portion 24A.

補強部材22A上面部は、弾性力を有する軟質の貼着材21を介して、ウェーハW上面に貼着固定されている。該貼着材21としては、所要の粘着力又は粘着力を有するものであれば、例えば、ワックス、粘着シート(接着シート)、両面テープ又はUVテープ等を使用できる。該貼着材21は、ウェーハWに対して衝撃吸収機能及び変形矯正機能を発揮する。   The upper surface portion of the reinforcing member 22A is adhered and fixed to the upper surface of the wafer W via a soft adhesive material 21 having elasticity. As the adhesive material 21, for example, wax, an adhesive sheet (adhesive sheet), a double-sided tape, a UV tape, or the like can be used as long as it has a required adhesive force or adhesive force. The adhesive material 21 exhibits an impact absorbing function and a deformation correcting function with respect to the wafer W.

本発明に係る補強部材の他の形態例を図3に示す。同図において、該補強部材22Bは円形の平板状に形成され、ウェーハW上面に貼着材21を介して重合貼着されている。該補強部材22Bの直径は、ウェーハ径と略同等に設定しても良いが、図示例では、ウェーハ径よりも若干大きくなるように形成されている。   Another embodiment of the reinforcing member according to the present invention is shown in FIG. In the figure, the reinforcing member 22 </ b> B is formed in a circular flat plate shape, and is superposed on the upper surface of the wafer W via a sticking material 21. The diameter of the reinforcing member 22B may be set substantially equal to the wafer diameter, but in the illustrated example, it is formed to be slightly larger than the wafer diameter.

ウェーハWは、研磨時、補強部材22Bを貼り付けたまま研磨パッド16に押し付けて研磨される。この場合、補強部材22BはウェーハWに対して、剛性維持機能及び衝撃吸収除去機能を発揮することにより、研磨時におけるウェーハWの変形を抑制する。   The wafer W is polished by being pressed against the polishing pad 16 while the reinforcing member 22B is adhered. In this case, the reinforcing member 22 </ b> B suppresses the deformation of the wafer W during polishing by exerting a rigidity maintaining function and a shock absorbing / removing function with respect to the wafer W.

次に、上記CMP装置11によるウェーハWの研磨手順について説明する。尚、所定箇所に待機中の未研磨のウェーハWには、予め補強部材22Aが貼り付けられているものとする。先ず、待機中の未研磨のウェーハW上に研磨ヘッド13を移動させる。次いで、バキュームライン(図示せず)の駆動により、キャリア17と弾性シート18間のエア室25を真空状態に設定してウェーハWを吸着保持する。その後、研磨ヘッド13を研磨パッド16の真上に移動させて、該研磨パッド16上面にウェーハWを載置する。   Next, a procedure for polishing the wafer W by the CMP apparatus 11 will be described. It is assumed that a reinforcing member 22A is attached in advance to an unpolished wafer W waiting in a predetermined location. First, the polishing head 13 is moved onto the standby unpolished wafer W. Next, by driving a vacuum line (not shown), the air chamber 25 between the carrier 17 and the elastic sheet 18 is set in a vacuum state to hold the wafer W by suction. Thereafter, the polishing head 13 is moved directly above the polishing pad 16, and the wafer W is placed on the upper surface of the polishing pad 16.

然る後、前記エア室25等に設定圧のエアを供給することにより、ウェーハW及びリテーナリング19を研磨パッド16上面に押し付けると共にプラテン12を回転させ、且つ、研磨ヘッド13を回転させながら、研磨パッド16上に研磨剤を供給してウェーハW下面を研磨する。   Thereafter, by supplying air at a set pressure to the air chamber 25 or the like, the wafer W and the retainer ring 19 are pressed against the upper surface of the polishing pad 16, the platen 12 is rotated, and the polishing head 13 is rotated. A polishing agent is supplied onto the polishing pad 16 to polish the lower surface of the wafer W.

研磨時に、図4に示すように、ウェーハWはリテーナリング19内で研磨パッド16の回転方向Rに移動するため、ウェーハWの外周側面がリテーナリング19の内周側面に衝突する。この衝突時、従来技術では、衝撃力によりウェーハWの外周縁部に座屈変形又は反り変形を発生させていたが、本実施例では、衝撃力によるウェーハWの外周縁部の変形が抑制される。   At the time of polishing, as shown in FIG. 4, since the wafer W moves in the rotation direction R of the polishing pad 16 in the retainer ring 19, the outer peripheral side surface of the wafer W collides with the inner peripheral side surface of the retainer ring 19. At the time of this collision, in the prior art, buckling deformation or warping deformation is generated in the outer peripheral edge portion of the wafer W by the impact force. However, in this embodiment, the deformation of the outer peripheral edge portion of the wafer W due to the impact force is suppressed. The

即ち、本実施例では、ウェーハWにはシャーレ形状の補強部材22Aが被着されているので、ウェーハWの外周側面は、補強部材22Aのリング状リブ部24Aで包囲される。そのため、研磨時にウェーハWがリテーナリング側に移動しても、補強部材22Aがリテーナリング19内周面に接触するので、ウェーハWの外周側面には直接衝撃力が作用しない。   That is, in the present embodiment, since the petri dish-shaped reinforcing member 22A is attached to the wafer W, the outer peripheral side surface of the wafer W is surrounded by the ring-shaped rib portion 24A of the reinforcing member 22A. Therefore, even if the wafer W moves to the retainer ring side during polishing, the reinforcing member 22A comes into contact with the inner peripheral surface of the retainer ring 19, so that no impact force acts directly on the outer peripheral side surface of the wafer W.

又、ウェーハWにシャーレ形状の補強部材22Aを被着した場合は、補強部材22Aを被着しない場合に比べて、補強部材22Aの径寸法及び高さ寸法に比例して、ウェーハWの剛性強度が増大すると共に、リテーナリング19に対する補強部材22Aの接触面積が拡大する。その結果、リテーナリング19からウェーハWが受ける実質的な衝撃力も大幅に小さくなる。   Further, when the petri dish-shaped reinforcing member 22A is attached to the wafer W, the rigidity strength of the wafer W is proportional to the diameter and height of the reinforcing member 22A compared to the case where the reinforcing member 22A is not attached. And the contact area of the reinforcing member 22A with the retainer ring 19 increases. As a result, the substantial impact force that the wafer W receives from the retainer ring 19 is also greatly reduced.

斯くの如く、ウェーハWに作用する衝撃力が小さくなるので、リテーナリング19との衝突によるウェーハW外周縁部の変形が抑制される。併せて、前記変形によるウェーハW外周縁部の研磨不良が防止される。また、研磨ムラを無くして高い研磨精度及び研磨形状が得られるので、ウェーハWのデバイス性能が著しく向上する。   As described above, since the impact force acting on the wafer W is reduced, deformation of the outer peripheral edge portion of the wafer W due to the collision with the retainer ring 19 is suppressed. In addition, poor polishing of the outer peripheral edge of the wafer W due to the deformation is prevented. Moreover, since the polishing unevenness is eliminated and high polishing accuracy and polishing shape are obtained, the device performance of the wafer W is remarkably improved.

図6に示すように、本発明は従来技術とは異なり、ウェーハW外周縁部にはリング状の研磨不良領域Eが発生しないので、その分だけウェーハWの有効面積が広くなる。   As shown in FIG. 6, unlike the prior art, the present invention does not generate a ring-shaped poor polishing region E in the outer peripheral edge portion of the wafer W, so that the effective area of the wafer W is widened accordingly.

図7に本発明方式を従来方式と比較した研磨レートの実験結果を示す。この実験結果から判るように、従来方式では実線グラフ中の符号Gで示す如く、ウェーハW外周縁部の研磨レートが顕著に増大していたが、本発明方式では破線グラフに示す如く、ウェーハWに対して変形抑制効果を発揮するため、研磨レートを増大させることなく、研磨形状の変形が効果的に防止されて良好な研磨加工が得られる。   FIG. 7 shows the experimental result of the polishing rate comparing the method of the present invention with the conventional method. As can be seen from the experimental results, in the conventional method, the polishing rate of the outer peripheral edge of the wafer W was remarkably increased as indicated by the symbol G in the solid line graph. In contrast, since the deformation suppressing effect is exhibited, the polishing shape is effectively prevented from being deformed without increasing the polishing rate, and a good polishing process can be obtained.

本発明では、補強部材22Aは貼着材21を介してウェーハWに貼り付けられているので、貼着材21は、ウェーハWに作用する変形力に対して高い吸収除去機能を発揮する。斯くして、ウェーハW裏面(上面)の平面度に対する変形力を貼着材21で吸収除去することにより、ウェーハWの研磨面全域に及んで圧力分布が均一化される。そのため、衝撃によるウェーハWの座屈変形や反り変形等が自動的に抑制又は矯正される。尚、研磨後、補強部材22AはウェーハWから取り外される。   In the present invention, since the reinforcing member 22 </ b> A is attached to the wafer W via the adhesive material 21, the adhesive material 21 exhibits a high absorption and removal function with respect to the deformation force acting on the wafer W. Thus, the pressure distribution over the entire polishing surface of the wafer W is made uniform by absorbing and removing the deformation force with respect to the flatness of the back surface (upper surface) of the wafer W by the adhesive material 21. Therefore, buckling deformation and warpage deformation of the wafer W due to impact are automatically suppressed or corrected. The reinforcing member 22A is removed from the wafer W after polishing.

又、図3に示すように、ウェーハWに平板状の補強部材22Bを重合貼着した場合も、図2に示したシャーレ形状の補強部材22Aと同様の作用効果を奏する。即ち、ウェーハWの剛性強度を増大させると共に、ウェーハWの衝突時の変形力除去効果が顕著になる。   As shown in FIG. 3, even when a flat plate-like reinforcing member 22B is attached to the wafer W by polymerization, the same effects as the petri-shaped reinforcing member 22A shown in FIG. That is, the rigidity strength of the wafer W is increased and the effect of removing the deformation force when the wafer W collides becomes remarkable.

その結果、図5に示すように、研磨時にウェーハWの径方向外方Rへの移動により、補強部材22Aの外周側面がリテーナリング19の内周面に衝突した場合、従来に比べて、リテーナリング19からウェーハWに作用する衝撃力が大幅に低減する。従って、ウェーハW外周縁部の変形が抑制され、併せて、該変形に基づくウェーハW外周縁部の研磨不良が未然に防止される。   As a result, as shown in FIG. 5, when the outer peripheral side surface of the reinforcing member 22A collides with the inner peripheral surface of the retainer ring 19 due to the movement of the wafer W in the radial outer direction R during polishing, the retainer is compared with the conventional case. The impact force acting on the wafer W from the ring 19 is greatly reduced. Therefore, the deformation of the outer peripheral edge portion of the wafer W is suppressed, and at the same time, poor polishing of the outer peripheral edge portion of the wafer W based on the deformation is prevented.

特に、図5の構成例では、ウェーハ径よりも円形平板状の補強部材22Bの直径を若干大きく形成したことにより、補強部材22Bの外周縁部全域がウェーハWの外側に突出している。このため、研磨時にウェーハWが径方向外方に移動した際、補強部材22Bの外周側突出部がリテーナリング19の内周面に接触・衝突する。従って、衝撃によるウェーハWの座屈変形や反り変形等を確実に防止することができる。   In particular, in the configuration example of FIG. 5, the outer peripheral edge of the reinforcing member 22 </ b> B protrudes outside the wafer W because the diameter of the circular flat reinforcing member 22 </ b> B is slightly larger than the wafer diameter. For this reason, when the wafer W moves radially outward during polishing, the outer peripheral side protruding portion of the reinforcing member 22 </ b> B contacts and collides with the inner peripheral surface of the retainer ring 19. Therefore, buckling deformation and warping deformation of the wafer W due to impact can be reliably prevented.

更に、本発明に係る補強部材22A,22Bは研磨条件等に応じて、補強部材22A,22Bの高さや径寸法を最適値に変更調整することにより、リテーナリング19と接触するウェーハW外周側の面積を変更制御できるとともに、ウェーハWのリテーナリング19から受ける衝撃力の大きさも変更制御される。従って、研磨条件等に応じた形状寸法を有する補強部材22A,22Bを使用することにより、前記衝撃力によるウェーハW外周縁部の変形が一層簡易かつ確実に抑制される。   Further, the reinforcing members 22A and 22B according to the present invention can be adjusted on the outer peripheral side of the wafer W in contact with the retainer ring 19 by changing and adjusting the heights and diameters of the reinforcing members 22A and 22B to optimum values according to polishing conditions and the like. The area can be changed and controlled, and the magnitude of the impact force received from the retainer ring 19 of the wafer W is also changed and controlled. Therefore, by using the reinforcing members 22A and 22B having the shape and dimensions corresponding to the polishing conditions, the deformation of the outer peripheral edge of the wafer W due to the impact force can be more easily and reliably suppressed.

本発明は、本発明の精神を逸脱しない限り種々の改変を為すことができ、そして、本発明が該改変されたものに及ぶことは当然である。   The present invention can be variously modified without departing from the spirit of the present invention, and the present invention naturally extends to the modified one.

本発明の一実施例を示し、CMP装置の斜視図。1 is a perspective view of a CMP apparatus according to an embodiment of the present invention. 一実施例に係る略逆皿形状の補強部材を使用したウェーハ変形抑制装置を示す要部断面図。The principal part sectional drawing which shows the wafer deformation | transformation suppression apparatus which uses the substantially inverted dish-shaped reinforcement member which concerns on one Example. 一実施例に係る平板形状の補強部材を使用したウェーハ変形抑制装置を示す要部断面図。The principal part sectional drawing which shows the wafer deformation | transformation suppression apparatus which uses the flat reinforcement member which concerns on one Example. 図2のウェーハが研磨中に移動したときの状態を説明するウェーハ変形抑制装置の要部断面図。The principal part sectional drawing of the wafer deformation | transformation suppression apparatus explaining a state when the wafer of FIG. 2 moves during grinding | polishing. 図3のウェーハが研磨中に移動したときの状態を説明するウェーハ変形抑制装置の要部断面図。The principal part sectional drawing of the wafer deformation | transformation suppression apparatus explaining a state when the wafer of FIG. 3 moves during grinding | polishing. 一実施例に係るウェーハの研磨面を示す平面図。The top view which shows the grinding | polishing surface of the wafer which concerns on one Example. 本発明方式の変形抑制方式を従来方式と比較した研磨レートの実験結果を示すグラフ。The graph which shows the experimental result of the polishing rate which compared the deformation | transformation suppression system of this invention system with the conventional system. 従来の研磨ヘッド下面部を示す要部断面図。Sectional drawing which shows the principal part which shows the conventional polishing head lower surface part. 従来技術によるウェーハの変形例を示す正面断面図。Front sectional drawing which shows the modification of the wafer by a prior art. 従来技術によるウェーハの研磨面を示す平面図。The top view which shows the grinding | polishing surface of the wafer by a prior art.

符号の説明Explanation of symbols

11 CMP装置(ウェーハ研磨装置)
13 研磨ヘッド(ウェーハ保持ヘッド)
16 研磨パッド19 リテーナリング
21 貼着材(粘着材、接着材)
22A補強部材
22B補強部材
11 CMP equipment (wafer polishing equipment)
13 Polishing head (wafer holding head)
16 Polishing pad 19 Retainer ring 21 Adhesive (adhesive, adhesive)
22A reinforcing member 22B reinforcing member

Claims (5)

リテーナリングで包囲されたウェーハを研磨パッドに押し付けて研磨するCMP装置におけるウェーハ変形抑制装置であって、
前記ウェーハの上面に該ウェーハ径と略同等の直径を有する平面視円形の補強部材が貼り付けられ、
該補強部材を前記ウェーハに貼り付けたまま該ウェーハを研磨するように構成したことを特徴とするウェーハ変形抑制装置。
A wafer deformation suppression device in a CMP apparatus that polishes a wafer surrounded by a retainer ring by pressing the wafer against a polishing pad,
A circular reinforcing member in plan view having a diameter substantially equal to the diameter of the wafer is attached to the upper surface of the wafer,
A wafer deformation suppressing device configured to polish the wafer while the reinforcing member is attached to the wafer.
上記補強部材が上記ウェーハに被着可能な略逆皿状に形成されていることを特徴とする請求項1記載のウェーハ変形抑制装置。   2. The wafer deformation suppressing device according to claim 1, wherein the reinforcing member is formed in a substantially inverted dish shape that can be attached to the wafer. 上記補強部材がウェーハ径よりも大径の円形平板状に形成され、該補強部材の外周縁部が前記ウェーハの外側に突出していることを特徴とする請求項1記載のウェーハ変形抑制装置。   2. The wafer deformation suppressing device according to claim 1, wherein the reinforcing member is formed in a circular flat plate shape having a diameter larger than the wafer diameter, and an outer peripheral edge portion of the reinforcing member protrudes to the outside of the wafer. 上記貼着材が粘着テープ、ワックス等の弾性力を有する貼着材であることを特徴とする請求項1記載のウェーハ変形抑制装置。   2. The wafer deformation suppressing device according to claim 1, wherein the adhesive material is an adhesive material having elasticity such as an adhesive tape and wax. リテーナリングで包囲されたウェーハを研磨パッドに押し付けて研磨するCMP装置におけるウェーハ変形抑制方法であって、
前記ウェーハの上面に該ウェーハ径と略同径の直径を有する平面視円形の補強部材が貼着材を介して貼り付けられる工程と、
前記ウェーハに前記補強部材を貼り付けたまま研磨する工程とを含み、
研磨時に前記リテーナリングから前記ウェーハに作用する変形力を前記補強部材により吸収することを特徴とするウェーハ変形抑制方法。
A wafer deformation suppression method in a CMP apparatus for polishing by pressing a wafer surrounded by a retainer ring against a polishing pad,
A step in which a circular reinforcing member having a diameter substantially the same as the diameter of the wafer is bonded to the upper surface of the wafer via a bonding material;
Polishing while attaching the reinforcing member to the wafer,
A method for suppressing wafer deformation, wherein a deformation force acting on the wafer from the retainer ring during polishing is absorbed by the reinforcing member.
JP2007171119A 2007-06-28 2007-06-28 Wafer deformation suppressing device and method for preventing deformation of wafer Pending JP2009010227A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011255464A (en) * 2010-06-09 2011-12-22 Tokyo Seimitsu Co Ltd Template pressing wafer polishing method
KR101601802B1 (en) 2014-08-22 2016-03-16 (주)시스윈일렉트로닉스 Cleaning device for silicon wafer reuse and method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09272054A (en) * 1996-04-04 1997-10-21 Hitachi Ltd Wafer holding structure for polishing device and semiconductor device
JP2001102336A (en) * 1999-09-29 2001-04-13 Ibiden Co Ltd Table for wafer-polishing device, and ceramic structure body
JP2008100295A (en) * 2006-10-17 2008-05-01 Shin Etsu Handotai Co Ltd Polishing head and polishing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09272054A (en) * 1996-04-04 1997-10-21 Hitachi Ltd Wafer holding structure for polishing device and semiconductor device
JP2001102336A (en) * 1999-09-29 2001-04-13 Ibiden Co Ltd Table for wafer-polishing device, and ceramic structure body
JP2008100295A (en) * 2006-10-17 2008-05-01 Shin Etsu Handotai Co Ltd Polishing head and polishing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011255464A (en) * 2010-06-09 2011-12-22 Tokyo Seimitsu Co Ltd Template pressing wafer polishing method
KR101601802B1 (en) 2014-08-22 2016-03-16 (주)시스윈일렉트로닉스 Cleaning device for silicon wafer reuse and method

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