JP5916513B2 - 板状物の加工方法 - Google Patents
板状物の加工方法 Download PDFInfo
- Publication number
- JP5916513B2 JP5916513B2 JP2012117520A JP2012117520A JP5916513B2 JP 5916513 B2 JP5916513 B2 JP 5916513B2 JP 2012117520 A JP2012117520 A JP 2012117520A JP 2012117520 A JP2012117520 A JP 2012117520A JP 5916513 B2 JP5916513 B2 JP 5916513B2
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- JP
- Japan
- Prior art keywords
- wafer
- polishing
- grinding
- silicon wafer
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000003672 processing method Methods 0.000 title description 7
- 238000005498 polishing Methods 0.000 claims description 78
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 239000007788 liquid Substances 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 238000005247 gettering Methods 0.000 claims description 30
- 239000006061 abrasive grain Substances 0.000 claims description 21
- 238000012545 processing Methods 0.000 claims description 21
- 239000002002 slurry Substances 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 238000003825 pressing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 114
- 239000004065 semiconductor Substances 0.000 description 24
- 238000004140 cleaning Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 7
- 238000003754 machining Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Description
12 粗研削ユニット
15 デバイス
16 仕上げ研削ユニット
23 表面保護テープ
48 ターンテーブル
50 チャックテーブル
52 研磨ユニット
74 研磨パッド
78 加工液供給ノズル
80 電磁切替弁
82 スラリー供給源
83 砥粒
84 リンス液供給源
Claims (1)
- シリコンウエーハの加工方法であって、
シリコンウエーハをチャックテーブルで保持する保持ステップと、
シリコンウエーハを保持した該チャックテーブルを回転させつつ、研磨パッドを回転させて該チャックテーブルに保持されたシリコンウエーハを押圧するとともに砥粒を含有するアルカリ性のスラリーをシリコンウエーハと該研磨パッドとに供給しながら、該研磨パッドでシリコンウエーハを研磨する研磨ステップと、
該研磨ステップを実施した後、該チャックテーブルと該研磨パッドとを回転させるとともに該チャックテーブルに保持されたシリコンウエーハとシリコンウエーハを押圧する該研磨パッドとに砥粒を含有しない純水からなるリンス液を供給しながら、該研磨パッドでシリコンウエーハにゲッタリング層を生成するゲッタリング層生成ステップと、
を備えたことを特徴とするシリコンウエーハの加工方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012117520A JP5916513B2 (ja) | 2012-05-23 | 2012-05-23 | 板状物の加工方法 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2012117520A JP5916513B2 (ja) | 2012-05-23 | 2012-05-23 | 板状物の加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013244537A JP2013244537A (ja) | 2013-12-09 |
JP5916513B2 true JP5916513B2 (ja) | 2016-05-11 |
Family
ID=49844724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012117520A Active JP5916513B2 (ja) | 2012-05-23 | 2012-05-23 | 板状物の加工方法 |
Country Status (1)
Country | Link |
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JP (1) | JP5916513B2 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6380333B2 (ja) * | 2015-10-30 | 2018-08-29 | 株式会社Sumco | ウェーハ研磨装置およびこれに用いる研磨ヘッド |
JP6704275B2 (ja) | 2016-03-28 | 2020-06-03 | 株式会社ディスコ | デバイスウエーハの評価方法 |
JP6941420B2 (ja) * | 2016-08-26 | 2021-09-29 | 株式会社東京精密 | ウェハの表面処理装置 |
JP6856335B2 (ja) * | 2016-09-06 | 2021-04-07 | 株式会社ディスコ | 加工装置 |
JP2018056384A (ja) * | 2016-09-29 | 2018-04-05 | 株式会社ディスコ | デバイスウエーハの加工方法 |
JP6851761B2 (ja) * | 2016-09-30 | 2021-03-31 | 株式会社ディスコ | 板状物の加工方法 |
JP2018085411A (ja) | 2016-11-22 | 2018-05-31 | 株式会社ディスコ | ウエーハの加工方法 |
JP6965018B2 (ja) * | 2017-05-01 | 2021-11-10 | 株式会社ディスコ | ウエーハの加工方法 |
JP6846284B2 (ja) * | 2017-05-29 | 2021-03-24 | 株式会社ディスコ | シリコンウエーハの加工方法 |
JP6960788B2 (ja) * | 2017-07-13 | 2021-11-05 | 株式会社ディスコ | ウエーハの加工方法 |
JP7187117B2 (ja) | 2019-02-05 | 2022-12-12 | 株式会社ディスコ | アルカリ廃液中和装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040011991A1 (en) * | 2001-06-13 | 2004-01-22 | Markle Richard J. | Use of a gettering agent in a chemical mechanical polishing and rinsing operation and apparatus therefor |
JP2010225987A (ja) * | 2009-03-25 | 2010-10-07 | Disco Abrasive Syst Ltd | ウェーハの研磨方法及び研磨パッド |
JP5588151B2 (ja) * | 2009-09-11 | 2014-09-10 | 株式会社東京精密 | ウェーハ処理方法およびウェーハ処理装置 |
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2012
- 2012-05-23 JP JP2012117520A patent/JP5916513B2/ja active Active
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JP2013244537A (ja) | 2013-12-09 |
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