WO2014002302A1 - 積層セラミックコンデンサ - Google Patents
積層セラミックコンデンサ Download PDFInfo
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- WO2014002302A1 WO2014002302A1 PCT/JP2012/079409 JP2012079409W WO2014002302A1 WO 2014002302 A1 WO2014002302 A1 WO 2014002302A1 JP 2012079409 W JP2012079409 W JP 2012079409W WO 2014002302 A1 WO2014002302 A1 WO 2014002302A1
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- WIPO (PCT)
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- ceramic capacitor
- dielectric layer
- multilayer ceramic
- dielectric
- phase
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
Definitions
- the present invention relates to a multilayer ceramic capacitor having a high dielectric constant and high reliability.
- the dielectric ceramic composition constituting the dielectric layer of the multilayer ceramic capacitor Attempts have been made to improve the dielectric constant of objects.
- Patent Documents 1 and 2 As a method for improving the dielectric constant, a method of increasing the dispersibility of the subcomponent raw material by adding a roasting treatment to the raw material of the subcomponent in advance and adding it to the main component raw material in the form of roasted powder, A method of increasing the dielectric constant by adding it as a single oxide and adjusting it to a predetermined composition has been performed (Patent Documents 1 and 2).
- the present invention solves such problems and achieves a high dielectric constant and a thin layer to meet the demands for miniaturization and large capacity, and also provides a multilayer ceramic capacitor excellent in insulation reliability.
- the purpose is to provide.
- the present invention is a multilayer ceramic capacitor having a laminate in which dielectric layers and internal electrode layers are alternately laminated, and a cover layer formed as an outermost layer above and below the laminate in the lamination direction, It is a multilayer ceramic capacitor in which the dielectric layer is made of a sintered body containing barium titanate and a silicon compound, and the dielectric layer has a Fresnoite phase having an average particle diameter of 1 ⁇ m or less.
- At least a part of the Fresnoite phase is present at the interface between the dielectric layer and the internal electrode layer.
- the dielectric layer preferably contains 0 to 4 moles of magnesium oxide with respect to 1 mole of the silicon compound from the viewpoint of good formation of the Fresnoite phase and proper grain growth.
- the silicon compound is preferably silicon dioxide from the viewpoint of forming a good fresnoite phase. From the same viewpoint, the amount of the silicon compound in the dielectric layer is preferably 0.5 to 5 mol with respect to 100 mol of the barium titanate.
- the ratio of the Fresnoit phase in the dielectric layer is usually 0.5 to 3%.
- the dielectric layer may contain various additive compounds in order to give the constituent particles of the sintered body various characteristics.
- the dielectric layer preferably further contains an oxide of a rare earth element.
- FIG. 1 is a schematic longitudinal sectional view of a multilayer ceramic capacitor according to an embodiment of the present invention.
- FIG. 2 is an enlarged schematic view of the laminated portion of the dielectric layer and the internal electrode layer in the longitudinal sectional view similar to FIG. 1 of the multilayer ceramic capacitor of the present invention.
- FIG. 1 is a schematic longitudinal sectional view of a multilayer ceramic capacitor 1 of the present invention.
- the multilayer ceramic capacitor 1 is formed on a ceramic sintered body 10 having a chip size and a shape (for example, a 1.0 ⁇ 0.5 ⁇ 0.5 mm rectangular parallelepiped) defined by a standard, and on both sides of the ceramic sintered body 10. And a pair of external electrodes 20.
- the ceramic sintered body 10 is formed as a laminated body 11 in which barium titanate particle crystals are the main components and dielectric layers 12 and internal electrode layers 13 are alternately laminated, and as outermost layers above and below the lamination direction. Cover layer 15 to be formed.
- the cover layer 15 formed in the outermost layer portion of the laminate 11 protects the dielectric layer 12 and the internal electrode layer 13 from contamination such as moisture and contamination from the outside, and prevents their deterioration over time.
- the multilayer ceramic capacitor 1 is manufactured as follows, for example. First, a raw material powder of fine particles mainly composed of barium titanate is wet-mixed with an additive compound, and the obtained mixture is dried and pulverized to prepare a ceramic powder.
- Barium titanate is a tetragonal compound having a perovskite structure and exhibits a high dielectric constant.
- This barium titanate is generally obtained by synthesizing barium titanate by reacting a titanium raw material such as titanium dioxide with a barium raw material such as barium carbonate. In order to make this barium titanate into a powder having a desired particle size, heat treatment is performed and firing is performed.
- the barium titanate powder thus obtained is pulverized as necessary to adjust the particle size, or combined with a classification treatment to adjust the particle size.
- the average particle size of the barium titanate powder is usually 0.2 ⁇ m or less, preferably 0.08 to 0.15 ⁇ m. Further, the barium titanate powder is mixed with various additive compounds to prepare the ceramic powder as described above.
- a silicon compound is used as the additive compound.
- a raw material powder containing barium titanate and a silicon compound are fired, they react to form a Fresnoite phase in the sintered body obtained by the firing, thereby achieving high dielectric constant and insulation.
- Examples of the silicon compound include silicon dioxide and BaSiO 3. Among these, silicon dioxide is preferable from the viewpoint of easy availability of raw materials and good formation of a Fresnoite phase.
- the sintered body constitutes the dielectric layer 12 in the multilayer ceramic capacitor 1 of the present invention.
- the amount of the silicon compound in the dielectric layer 12 is usually 0.5 per 100 mol of barium titanate. ⁇ 5 moles. A larger amount of silicon compound is preferable because a Fresnoite phase is likely to be formed. On the other hand, if the blending amount is too large, a Fresnoite phase is formed in a large amount and the characteristics of the multilayer ceramic capacitor tend to deteriorate. Therefore, the amount of the silicon compound is preferably 0.5 to 3 mol with respect to 100 mol of barium titanate.
- additive compound examples include MgO, MnO, oxides of rare earth elements (Y, Dy, Tm, Ho, and Er), and Y, Sm, Eu, Gd, Tb, Er, Tm, Cr, V, Mn, and Co. , Ni, Nb, Ta, Mo, W, Li, B, Na or K oxides.
- MgO manganesium oxide
- MgO is an important element for suppressing the occurrence of oxygen defects when reducing and firing the internal electrode in the production of the multilayer ceramic capacitor.
- MgO easily dissolves in barium titanate, thereby reducing the reactivity of barium titanate with the silicon compound and making it difficult to form a Fresnoite phase.
- MgO also has an effect of suppressing grain growth of the dielectric layer constituent particles in the firing process when forming the dielectric layer 12.
- the amount of MgO in the dielectric layer 12 is generally 2 mol or less with respect to 100 mol of barium titanate, and preferably 0 to 4 mol with respect to 1 mol of the silicon compound. Particularly preferably, the amount of MgO in the dielectric layer 12 is 0 to 0.3 mol per mol of the silicon compound.
- the MnO manganese oxide
- the MnO has an effect of improving the insulation resistance and high temperature load life of the multilayer ceramic capacitor, and the amount in the dielectric layer 12 is usually 0.5 with respect to 100 mol of barium titanate. It is below the mole.
- the rare earth element oxide has an effect of improving the high temperature load life of the multilayer ceramic capacitor, and the amount in the dielectric layer 12 is usually 2 mol or less with respect to 100 mol of barium titanate. .
- the additive compound described above is added to and mixed with barium titanate together with the silicon compound.
- the respective components are blended so that the content ratio thereof is the above-described ratio, wet-mixed, dried and pulverized to prepare a ceramic powder.
- a binder such as polyvinyl butyral resin, an organic solvent such as ethanol and toluene, and a plasticizer such as dioctyl phthalate (DOP) are added and wet mixed.
- a strip-shaped dielectric green sheet having a thickness of 3 ⁇ m or less is applied onto a substrate by, for example, a die coater method or a doctor blade method and dried.
- a pattern of the internal electrode layer 13 is arranged on the surface of the dielectric green sheet by printing a metal conductive paste containing an organic binder by screen printing or gravure printing. Nickel is widely used as the metal from the viewpoint of cost.
- barium titanate having an average particle size of 50 nm or less may be uniformly dispersed as a co-material.
- a predetermined number of layers for example, 10 to 500 layers
- a cover sheet to be the cover layer 15 is pressure-bonded to the upper and lower sides of the laminated dielectric green sheets, cut to a predetermined chip size (for example, 4.0 mm ⁇ 2.0 mm), and then Ni conductive paste to be the external electrode 20 is cut. Apply to both sides of the laminated body and dry. Thereby, a molded body of the multilayer ceramic capacitor 1 is obtained.
- the molded body of the multilayer ceramic capacitor 1 thus obtained is debindered in an N 2 atmosphere at about 350 ° C., and then a mixed gas of N 2 , H 2 and H 2 O (oxygen partial pressure is about 1. 0.times.10.sup.-11 MPa) is usually fired at 1100 to 1300.degree. C. for 10 minutes to 2 hours to sinter each compound (barium titanate, silicon compound, etc.) constituting the dielectric green sheet, Furthermore, at least a part of the barium titanate and the silicon compound react to form a Fresnoite phase (Ba 2 TiSi 2 O 8 ).
- a mixed gas of N 2 , H 2 and H 2 O oxygen partial pressure is about 1. 0.times.10.sup.-11 MPa
- the laminated body 11 by which the dielectric material layer 12 and internal electrode layer 13 which consist of a sintered compact are laminated
- a multilayer ceramic capacitor 1 is obtained.
- the Fresnoite phase was obtained by substituting part of Ba with Sr or Ca in the above example, or part of Ti with Zr, formula Ba 2-x-y Ca x Sr y Ti 1-z Zr z Si 2 O 8 (0 ⁇ x ⁇ 2,0 ⁇ y ⁇ 2,0 ⁇ x + y ⁇ 2,0 ⁇ z ⁇ 1) It may be a thing.
- the insulating property of the multilayer ceramic capacitor can be improved.
- FIG. 2 is an enlarged schematic view of the laminated portion of the dielectric layer and the internal electrode layer in the same longitudinal sectional view as that of FIG. 1 of the multilayer ceramic capacitor of the present invention.
- the average particle diameter measured by TEM (transmission electron microscope) -EDS (energy dispersive X-ray analysis) of the Fresnoite phase is 1 ⁇ m or less, and the Fresnoite phase is finely present in the dielectric layer 12. It is easy to obtain a high dielectric constant. From such a viewpoint, the average particle size of the Fresnoite phase is preferably 300 to 600 nm.
- the average particle size of the Fresnoit phase is measured as follows. First, a vertical cross section of the multilayer ceramic capacitor 1 is photographed by TEM-EDS so that the dielectric layer 12 and the internal electrode layer 13 are in the photograph within a range of 15 ⁇ m ⁇ 15 ⁇ m. Next, the maximum diameter a in the direction parallel to the internal electrode layer 13 and the maximum diameter b in the direction perpendicular to the internal electrode layer 13 are measured for all the Fresnoit phases within the range of 15 ⁇ m ⁇ 15 ⁇ m. And (a + b) / 2 is calculated. This is the particle size. Next, the average value A of the particle diameter of the Fresnoit phase is calculated. At least 20 similar measurements are performed to determine an average value A for each measurement location, and the average value B is taken as the average particle size of the Fresnoit phase.
- the multilayer ceramic capacitor 1 is a product with excellent insulation reliability and a long-life cost performance.
- the Fresnoit phase is present at the interface between the dielectric layer 12 and the internal electrode layer 13, the effect is further enhanced.
- the fresnoite phase when the fresnoite phase is formed, there is a state in which the A site is defective in the crystal lattice of barium titanate (having a perovskite structure) around the fresnoite phase. Therefore, the solid solution of the additive compound in barium titanate is promoted, grain growth by firing is promoted, and the dielectric constant per particle increases. As a result, the dielectric constant of the obtained multilayer ceramic capacitor 1 increases.
- the proportion of the Fresnoite phase in the dielectric layer 12 is usually 0.5 to 3%, and preferably 0.5 to 1 from the viewpoint of good dielectric constant and insulation. %.
- the measuring method of the said existence ratio is as follows.
- the surface parallel to the internal electrode layer 13 of the dielectric layer 12 is set so that the high-concentration portion of the Si concentration is high in TEM-EDS, and a binarized image is photographed in a 15 ⁇ m ⁇ 15 ⁇ m field of view. To do.
- the ratio of the area of the portion with high brightness to the area of the entire dielectric layer in the visual field is defined as the area ratio of the Fresnoit phase.
- the same measurement is performed at at least 20 locations to determine the area ratio of the Fresnoit layer at each measurement location, and the average value thereof is defined as the presence ratio of the Fresnoit phase.
- the Fresnoite phase can be identified by various methods, but can be examined using TEM-EDS composition analysis. The Fresnoite phase can also be confirmed by confirming the crystal structure from the electron diffraction pattern. Furthermore, since the Fresnoit phase has a TiO 5 6- structure and is different from the surrounding TiO 6 8 ⁇ structure of BaTiO 3 , it can be identified even when the shape of Ti-L2, 3edge is changed by the EELS (electron energy loss spectroscopy) spectrum. Is possible.
- the internal electrode layer 13 is embedded so that the edges are alternately exposed on both end surfaces in the length direction of the dielectric layer 12. The portion exposed at the edge of the internal electrode layer 13 is connected to the external electrode 20.
- the thickness of the dielectric layer 12 is usually 3 ⁇ m or less, preferably 0.5 to 1 ⁇ m, and the thickness of the internal electrode layer 13 is usually 0.5 to 3 ⁇ m.
- the average particle size of the barium titanate particle crystals mainly constituting the dielectric layer 12 is usually controlled to 800 nm or less.
- the dielectric layer 12 has a fresnoite. Since the average particle size of the phase is controlled to be as small as 1 ⁇ m or less, even with such a thin dielectric layer, excellent smoothness is achieved on the surface, and a multilayer ceramic capacitor that is less prone to problems such as short circuits. Is obtained.
- BaTiO 3 powder was prepared as a main component, and SiO 2 , MgO, Ho 2 O 3 and MnO were prepared as subcomponents. These were weighed so as to have the composition shown in Table 1 below, wet mixed by a ball mill, dried, and calcined at 400 ° C. to obtain a ceramic powder.
- the capacitance was measured with an LCR meter (manufactured by Hewlett-Packard Company HP4284), and the relative dielectric constant was calculated from the thickness of the dielectric layer and the effective electrode area.
- a dielectric layer was cut out from each multilayer ceramic capacitor for observation with a transmission electron microscope (TEM). This was thinned to a thickness of 200 nm by an Ar ion milling method, and combined with EDS composition analysis, the presence or absence of a fresnoite phase was confirmed.
- TEM transmission electron microscope
- the ratio of the Fresnoite phase was obtained from the area ratio of the Fresnoit phase to the entire dielectric layer, and the average value was used as the presence ratio of the Fresnoit phase. evaluated.
- the presence of a Fresnoite phase with an average particle diameter of 1 ⁇ m or less in the dielectric layer can achieve high dielectric constant and high insulation (high reliability) in the multilayer ceramic capacitor. I understand.
Abstract
Description
1 積層セラミックコンデンサ
10 セラミック焼結体
11 積層体
12 誘電体層
13 内部電極層
15 カバー層
20 外部電極
32 フレスノイト相
34 誘電体粒子
36 内部電極
Claims (7)
- 誘電体層と内部電極層とが交互に積層されてなる積層体と、前記積層体の積層方向上下の最外層として形成されるカバー層とを有する積層セラミックコンデンサであって、
前記誘電体層がチタン酸バリウム及びケイ素化合物を含む焼結体からなり、
前記誘電体層には、平均粒子径が1μm以下のフレスノイト相が存在している、積層セラミックコンデンサ。 - 前記フレスノイト相の少なくとも一部は、前記誘電体層と前記内部電極層との界面に存在している、請求項1に記載の積層セラミックコンデンサ。
- 前記誘電体層がさらに酸化マグネシウムを、前記ケイ素化合物1モルに対して0~4モル含む、請求項1又は2に記載の積層セラミックコンデンサ。
- 前記ケイ素化合物が二酸化ケイ素である、請求項1~3のいずれかに記載の積層セラミックコンデンサ。
- 前記誘電体層におけるケイ素化合物の量が、前記チタン酸バリウム100モルに対して0.5~5モルである、請求項1~4のいずれかに記載の積層セラミックコンデンサ。
- 前記誘電体層におけるフレスノイト相の存在割合が、0.5~3%である、請求項1~5のいずれかに記載の積層セラミックコンデンサ。
- 前記誘電体層が、さらに希土類元素の酸化物を含む、請求項1~6のいずれかに記載の積層セラミックコンデンサ。
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KR1020147024745A KR101581809B1 (ko) | 2012-06-29 | 2012-11-13 | 적층 세라믹 콘덴서 |
CN201280072131.XA CN104246929B (zh) | 2012-06-29 | 2012-11-13 | 层叠陶瓷电容器 |
US14/389,308 US9536666B2 (en) | 2012-06-29 | 2012-11-13 | Multi-layer ceramic capacitor |
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JP2012146611 | 2012-06-29 |
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US (1) | US9536666B2 (ja) |
JP (1) | JP5211262B1 (ja) |
KR (1) | KR101581809B1 (ja) |
CN (1) | CN104246929B (ja) |
TW (1) | TWI525651B (ja) |
WO (1) | WO2014002302A1 (ja) |
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JP6398349B2 (ja) | 2013-08-23 | 2018-10-03 | Tdk株式会社 | 積層型セラミック電子部品 |
JP2015008312A (ja) * | 2014-08-13 | 2015-01-15 | 株式会社村田製作所 | 積層セラミックコンデンサ、これを含む積層セラミックコンデンサ連、および、積層セラミックコンデンサの実装体 |
JP6665438B2 (ja) * | 2015-07-17 | 2020-03-13 | 株式会社村田製作所 | 積層セラミックコンデンサ |
JP6378651B2 (ja) * | 2015-07-28 | 2018-08-22 | 太陽誘電株式会社 | 積層セラミックコンデンサ |
KR102587765B1 (ko) * | 2017-08-10 | 2023-10-12 | 다이요 유덴 가부시키가이샤 | 적층 세라믹 콘덴서 및 그 제조 방법 |
JP7154531B2 (ja) * | 2018-03-22 | 2022-10-18 | 国立大学法人東北大学 | 電子デバイスの評価方法および評価装置 |
JP2020155523A (ja) * | 2019-03-19 | 2020-09-24 | 株式会社村田製作所 | 積層セラミックコンデンサ |
KR20190116132A (ko) * | 2019-07-15 | 2019-10-14 | 삼성전기주식회사 | 적층형 커패시터 및 그 실장 기판 |
CN115667151B (zh) * | 2020-05-27 | 2024-03-12 | 松下知识产权经营株式会社 | 钡化合物结构体及其制造方法 |
CN114014649B (zh) * | 2021-12-13 | 2023-07-25 | 深圳先进电子材料国际创新研究院 | 共掺杂钛酸钡陶瓷介电材料、制备方法及其应用 |
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JP2011068524A (ja) * | 2009-09-28 | 2011-04-07 | Kyocera Corp | 積層セラミックコンデンサ |
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JP3326513B2 (ja) | 1994-10-19 | 2002-09-24 | ティーディーケイ株式会社 | 積層型セラミックチップコンデンサ |
JPH10255549A (ja) | 1997-03-05 | 1998-09-25 | Tdk Corp | 誘電体セラミック材料およびその製造方法並びに積層セラミックコンデンサ |
TW439071B (en) | 1998-07-23 | 2001-06-07 | Taiyo Yuden Kk | Dielectric electromagnetic composition and ceramic electronic part |
JP4661203B2 (ja) | 2004-12-15 | 2011-03-30 | Tdk株式会社 | セラミック電子部品およびその製造方法 |
CN101147216B (zh) * | 2005-03-25 | 2010-06-16 | 京瓷株式会社 | 层叠陶瓷电容器及其制造方法 |
KR100891472B1 (ko) * | 2005-03-28 | 2009-04-01 | 파나소닉 주식회사 | 유전체 자기 조성물, 및 이것을 이용한 콘덴서의 제조 방법 |
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- 2012-11-13 JP JP2012249552A patent/JP5211262B1/ja active Active
- 2012-11-13 US US14/389,308 patent/US9536666B2/en active Active
- 2012-11-13 KR KR1020147024745A patent/KR101581809B1/ko active IP Right Grant
- 2012-11-13 WO PCT/JP2012/079409 patent/WO2014002302A1/ja active Application Filing
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JP2000095563A (ja) * | 1998-07-23 | 2000-04-04 | Taiyo Yuden Co Ltd | 誘電体磁器組成物とセラミック電子部品 |
JP2011068524A (ja) * | 2009-09-28 | 2011-04-07 | Kyocera Corp | 積層セラミックコンデンサ |
JP2011173747A (ja) * | 2010-02-24 | 2011-09-08 | Murata Mfg Co Ltd | 誘電体セラミックおよび積層セラミックコンデンサ |
JP2012036083A (ja) * | 2011-09-07 | 2012-02-23 | Samsung Electro-Mechanics Co Ltd | 焼結体及びセラミックコンデンサ並びにこれらの製造方法 |
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TW201401312A (zh) | 2014-01-01 |
TWI525651B (zh) | 2016-03-11 |
JP5211262B1 (ja) | 2013-06-12 |
CN104246929B (zh) | 2017-10-20 |
US20150279565A1 (en) | 2015-10-01 |
US9536666B2 (en) | 2017-01-03 |
CN104246929A (zh) | 2014-12-24 |
KR20140126733A (ko) | 2014-10-31 |
KR101581809B1 (ko) | 2015-12-31 |
JP2014029978A (ja) | 2014-02-13 |
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