WO2013161999A1 - 保持体、結晶成長方法および結晶成長装置 - Google Patents
保持体、結晶成長方法および結晶成長装置 Download PDFInfo
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- WO2013161999A1 WO2013161999A1 PCT/JP2013/062393 JP2013062393W WO2013161999A1 WO 2013161999 A1 WO2013161999 A1 WO 2013161999A1 JP 2013062393 W JP2013062393 W JP 2013062393W WO 2013161999 A1 WO2013161999 A1 WO 2013161999A1
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- Prior art keywords
- seed crystal
- holding
- crystal
- solution
- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/32—Seed holders, e.g. chucks
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/068—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/106—Seed pulling including sealing means details
Definitions
- the present invention relates to a holder in which a seed crystal is bonded to a holding member having a suppressing member, a crystal growth method for growing a crystal using the holding body, and a crystal growth apparatus including the holding member having the suppressing member. is there.
- silicon carbide As a crystal currently attracting attention, there is silicon carbide (SiC) which is a compound of carbon and silicon. Silicon carbide has advantages such as good withstand voltage characteristics, for example. Examples of a method for growing a silicon carbide crystal include a solution growth method and a sublimation method. A method for growing a silicon carbide crystal by a solution growth method is disclosed in, for example, Japanese Patent Application Laid-Open No. 2000-264790.
- the present invention has been devised in view of such circumstances, and a holder capable of suppressing the growth of miscellaneous crystals in the vicinity of a seed crystal, a crystal growth method and a crystal growth apparatus using the same The purpose is to provide.
- the holder of the present invention is a holder used in a solution growth method in which a lower surface of a seed crystal is brought into contact with a silicon-containing solution containing carbon contained in a crucible having an opening at the upper end to grow a crystal on the lower surface.
- a restraining member that suppresses upward movement of vapor from the solution, which is fixed and continuous from the side surface to the outside of the outer periphery of the seed crystal in plan view.
- the crystal growth method of the present invention also includes a first preparation step of preparing a crucible for crystal growth having an opening at the upper end and containing a silicon-containing solution therein, and the above-described holding body.
- a second preparation step putting the holding body into the inside from the opening of the crucible, and bringing the lower surface of the seed crystal into contact with the solution while positioning the suppressing member together with the seed crystal.
- the crystal growth apparatus of the present invention has an opening at the upper end, a crucible for crystal growth containing therein a silicon-containing solution, and can be taken in and out of the crucible from the opening.
- a holding member that holds a seed crystal having an upper surface that is larger than the lower surface on the lower surface, and is fixed to a side surface of the holding member, and is continuous from the side surface to the outside of the outer periphery of the seed crystal in plan view.
- a suppressing member that suppresses upward movement of vapor from the solution.
- the present invention when growing a silicon carbide crystal by a solution growth method, it is possible to suppress the growth of miscellaneous crystals in the vicinity of the seed crystal and to enlarge or elongate the crystal made of silicon carbide. There is an effect.
- FIG. 3 is a cross-sectional view showing an example of a holding body according to the first embodiment of the present invention, and corresponds to a cross section taken along the line A-A ′ of FIG. 2.
- This corresponds to a plan view of the holding body of FIG. It is sectional drawing explaining the effect when the support body of FIG. 1 is used for the solution growth method.
- FIG. 8 is a view showing a modified example of the holding body of FIG. 1 and corresponds to a cross section taken along the line A-A ′ of FIG. 2.
- FIG. 8 is a view showing a modification of the holding body of FIG. 1, and each corresponds to a cross section taken along line A-A ′ of FIG.
- FIG. 1A and 2B are diagrams illustrating a modification of the holding body of FIG. 1, in which FIG. 1A is a plan view seen from above, and FIG. 2B corresponds to a cross section taken along line BB ′ in FIG. .
- FIG. 11 is a cross-sectional view showing an example of a holding body according to the second embodiment of the present invention, and corresponds to a cross section taken along line B-B ′ of FIG. 10. This corresponds to a plan view of the holding body in FIG. FIG.
- FIG. 11 is an enlarged cross-sectional view illustrating a part of the effect when the holder of FIG. 10 is used in the solution growth method.
- FIG. 11 is a view showing a modified example of the holder in FIG. 10, where (a) corresponds to a cross section taken along the line BB ′ in FIG. 10, and (b) is a view when the holder is used in a solution method. It is an expanded sectional view which expanded a part explaining an effect.
- FIG. 11 is a view showing a modified example of the holder in FIG. 10, where (a) corresponds to a cross section taken along the line BB ′ in FIG. 10, and (b) is a view when the holder is used in a solution method. It is an expanded sectional view which expanded a part explaining an effect.
- FIG. 11 is a view showing a modified example of the holding body of FIG. 10 and corresponds to a cross section taken along line B-B ′ of FIG. 10.
- FIG. 11 is a view showing a modified example of the holding body of FIG. 10 and corresponds to a cross section taken along line B-B ′ of FIG. 10.
- FIG. 17 is a view showing a modified example of the holding body of FIG. 16, and corresponds to a cross section taken along line B-B ′ of FIG. It is sectional drawing which shows an example of the crystal growth apparatus provided with the holding member and suppression member of this invention.
- the holding body 1 is mainly composed of a seed crystal 2, a holding member 3, and a suppressing member 8.
- the holding body 1 is used by being attached to a crystal growth apparatus 4 as shown in FIG.
- the holding body 1 brings the lower surface 2B of the seed crystal 2 into contact with the silicon solution 6 containing carbon housed in the crucible 5 having the opening 5a at the upper end, and the crystal is applied to the lower surface 2B. It is used for the solution growth method to grow.
- the holding member 3 has the seed crystal 2 fixed to the lower surface 3A via an adhesive 7 as shown in FIG. That is, the holding member 3 is positioned on the seed crystal 2 with the adhesive 7 interposed therebetween.
- FIG. 1 is an enlarged sectional view of a part of the holding body 1 including the seed crystal 2, the adhesive 7 and the holding member 3.
- the downward direction is the D1 direction and the upward direction is the D2 direction, but the same applies to the following description unless otherwise specified.
- the holding member 3 only needs to have the lower surface 3A.
- the lower surface 3A has a polygonal shape such as a quadrangular shape or a plan view shape such as a circular shape. Therefore, the holding member 3 has a three-dimensional shape such as a rod shape such as a polygonal column shape or a cylindrical shape, and a rectangular parallelepiped shape.
- the material of the holding member 3 can be selected as appropriate, and can be made of, for example, an oxide such as zirconium oxide or magnesium oxide, or a material mainly composed of carbon.
- the porosity in the holding member 3 can be increased.
- the porosity of the holding member 3 is high, for example, the gas generated in the adhesive material 7 can be released from the holding member 3, and bubbles generated in the adhesive material 7 are suppressed.
- the adhesive strength with 7 can be maintained.
- the seed crystal 2 is composed of silicon carbide crystals.
- a silicon carbide single crystal or polycrystal can be used as the crystal of the seed crystal 2.
- the seed crystal 2 can be set so that the thickness is, for example, not less than 0.1 mm and not more than 10 mm.
- the seed crystal 2 is provided so that the outer shape when viewed in plan is, for example, a polygonal shape or a circular shape.
- the width dimension of the seed crystal 2 can be set to be, for example, 5 mm or more and 20 cm or less.
- the seed crystal 2 has an upper surface 2A larger than the lower surface 3A of the holding member 3, as shown in FIG. That is, the area of the upper surface 2A of the seed crystal 2 is provided to be larger than the area of the lower surface 3A of the holding member 3. Thereby, a part of the upper surface 2 ⁇ / b> A of the seed crystal 2 is fixed to the lower surface 3 ⁇ / b> A of the holding member 3 through the adhesive 7.
- the area of the upper surface 2A of the seed crystal 2 can be provided to be 110% or more and 400% or less with respect to the lower surface 3A, for example.
- the seed crystal 2 may be fixed anywhere on the lower surface 3A and the upper surface 2A of the holding member 3.
- the seed crystal 2 is fixed so that the region including the center of gravity of the seed crystal 2 overlaps the lower surface 3A, the seed crystal 2 can be held in a balanced manner. Therefore, for example, it is possible to perform crystal growth while maintaining horizontality with respect to the liquid surface of the solution 6.
- the adhesive 7 is disposed so as to be interposed between the upper surface 2A of the seed crystal 2 and the lower surface 3A of the holding member 3.
- the material of the adhesive 7 can be appropriately set depending on the material of the holding member 3.
- the adhesive 7 for example, a ceramic adhesive containing aluminum oxide, magnesium oxide, zirconium oxide, or the like, or a carbon adhesive mainly containing carbon can be used.
- the holding member 3 is made of carbon, by using a carbon adhesive, it is possible to improve the adhesive strength and make it difficult to become an impurity even if it melts.
- the adhesive 7 may be omitted.
- the suppressing member 8 is a side surface 3B of the holding member 3 and is fixed so as to be positioned on the seed crystal 2. As will be described later, the suppressing member 8 only needs to be in a position where the vapor of the solution 6 can be prevented from moving upward when the seed crystal 2 comes into contact with the solution 6.
- the suppressing member 8 has such a height (with respect to the upper surface 2A of the seed crystal 2) that the suppressing member 8 also enters the crucible 5 when the seed crystal 2 is brought into contact with the solution 6 in the crucible 5.
- the suppressing member 8 is disposed at a position lower than the opening 5 a of the crucible 5 when the seed crystal 2 is brought into contact with the solution 6.
- the suppressing member 8 is disposed such that the height of the seed crystal 2 from the upper surface 2A is, for example, 3 mm or more and 15 cm or less.
- the suppression member 8 is comprised with the plate-shaped member.
- the suppressing member 8 is fixed to the holding member 3 with, for example, an adhesive.
- an adhesive for example, an adhesive.
- a carbon adhesive mainly composed of carbon can be used as the adhesive.
- the suppression member 8 may be formed integrally with the holding member 8, and in this case, the suppression member 8 can be further firmly fixed.
- the suppressing member 8 is provided so as to continue from the side surface 3 ⁇ / b> B to the outside of the outer periphery of the seed crystal 2 in a plan view.
- size of the suppression member 8 is not specifically limited, What is necessary is just a magnitude
- the suppressing member 8 can be arranged such that the area of the upper surface 2A of the seed crystal 2 is, for example, 105% or more and 300% or less.
- the suppressing member 8 positioned on the seed crystal 2 is fixed to the holding member 3. Therefore, as shown in FIG. 3, the upward movement of the vapor 9 of the solution 6 is suppressed by the suppressing member 8. And since the suppression member 8 is provided continuously from the side surface 3C of the holding member 3, the steam 9 flows from the lower surface of the suppression member 8 to the upper surface 2A of the seed crystal 2 through the side surface 3C. Therefore, the temperature of the upper surface 2A of the seed crystal 2 or the temperature of the solution 6 positioned around the seed crystal 2 is maintained.
- the miscellaneous crystal generally refers to a crystal that grows unintentionally around the seed crystal 2.
- the holder 1 of the present embodiment has a portion of the upper surface 2 ⁇ / b> A of the seed crystal 2, specifically, a peripheral portion exposed, so that the seed crystal 2, the holding member 3, and A space surrounded by the suppression member 8 is provided. Therefore, the vapor 9 ′ of the solution 6 travels along the lower surface of the suppressing member 8, the side surface 3 ⁇ / b> B of the holding member 3, and the upper surface 2 ⁇ / b> A of the seed crystal 2, and then travels along the side surface 2 ⁇ / b> B of the seed crystal 2. As a result, the temperature of the side surface 2C of the seed crystal 2 can be maintained, and miscellaneous crystals growing near the side surface 2C of the seed crystal 2 can be suppressed.
- the suppressing member 8 may function as a reflector that reflects the radiant heat from the solution 6.
- the suppressing member 8 positioned on the seed crystal 2 also has a function of reflecting the radiant heat from the solution 6 to the upper surface 2A of the seed crystal 2.
- the temperature of the upper surface 2 ⁇ / b> A of the seed crystal 2 and the temperature of the solution 6 located around the seed crystal 2 are maintained, so that miscellaneous crystals can hardly grow in the solution 6.
- the suppressing member 8 of the present embodiment is set so that the outer periphery is larger than that of the seed crystal 2. Therefore, it is possible to reflect the vapor 9 (radiant heat) from the solution 9 and easily hit the side surface 2C of the seed crystal 2, and to suppress miscellaneous crystals growing on the side surface of the seed crystal 2, and to the lower surface 2B.
- the crystal to be grown can be enlarged or lengthened.
- miscellaneous crystals were likely to grow on the upper surface or the side surface of the seed crystal. Therefore, since the growth rate of miscellaneous crystals is much faster than the crystals grown on the lower surface of the seed crystal, the growth of crystals is hindered by miscellaneous crystals, making it difficult to increase the size or length.
- the suppressing member 8 may be inclined downward (D1 direction) from the side surface 3B of the holding member 3. Specifically, the suppressing member 8 is inclined with respect to the upper surface 2 ⁇ / b> A of the seed crystal 2.
- the inclination angle ⁇ between the side surface 3B of the holding member 3 and the suppressing member 8 can be set to be smaller than 90 °, for example.
- the suppressing member 8 may have a bent portion 8 a bent downward from the side surface 3 ⁇ / b> B of the holding member 3 toward the outer periphery.
- the suppressing member 8 positioned on the outer peripheral side of the bent portion 8a is referred to as a bent region 8a ′.
- the bent portion 8a may exist at any position of the suppressing member 8. Specifically, the bent portion 8a indicates a portion where the suppressing member 8 is bent downward. There may be one bent portion 8a or a plurality of bent portions 8a. For example, as shown in FIG. 6 (a), by having a bent portion 8a bent at a right angle to the upper surface 2A of the seed crystal 2, it is surrounded by the suppressing member 8, the holding member 3 and the seed crystal 2. Since the vapor 9 can be retained in the space, it is possible to further suppress the growth of miscellaneous crystals in the vicinity of the seed crystal 2.
- the bent region 8 a ′ may be inclined with respect to the upper surface 2 ⁇ / b> A of the seed crystal 2.
- the bending region 8a ′ has an angle (inclination angle) between the suppression member 8 and the bending region 8a ′ larger than 90 ° and smaller than 180 ° with respect to the suppressing member 8 (portion other than the bending region 8a ′).
- the inclination angle of the bent region 8a ' can be determined in consideration of, for example, how the radiant heat from the solution 6 is reflected toward the side surface 2C of the seed crystal 2.
- the bent region 8a ′ is inclined as described above, the heat radiation from the solution 6 can be easily reflected in the direction of the side surface 2C, and the miscellaneous crystals growing near the side surface 2C can be suppressed. Can do.
- the bent region 8a ' may be curved.
- the bending direction can be set so as to be bent outward with respect to the seed crystal 2, for example.
- the bent region 8a ' By curving the bent region 8a 'in this way, it can be more effectively reflected to the side surface 2C of the seed crystal 2. That is, it can be set so as to be intensively reflected on the side surface 2C of the seed crystal 2.
- the curved line when the bent region 8a 'is viewed in cross section may have a portion that is a quadratic curve whose focal point is in the vicinity of the side surface 2C. Thereby, it is possible to further suppress miscellaneous crystals growing near the side surface 2C of the seed crystal 2.
- the bent portion 8 a may be disposed outside the outer periphery of the seed crystal 2.
- the vapor 9 of the solution 6 can be easily taken into the space surrounded by the suppressing member 8, the holding member 3, and the seed crystal 2. it can.
- the vapor 9 being easily taken in, the temperature of the upper surface 2A of the seed crystal 2 can be maintained, and the growth of miscellaneous crystals can be further suppressed.
- the bent region 8 a ′ of the suppressing member 8 may be arranged so that the end thereof is immersed in the solution 6.
- the holding body 1 is disposed such that the end of the bent region 8a ′ where a part of the suppressing member 8 is bent at 90 ° is positioned below the lower surface 2B of the seed crystal 2 in the vertical direction. It may be.
- the end portion of the suppressing member 8 is immersed in the solution 6 and is arranged so as to cover the seed crystal 2.
- the ambient temperature of the seed crystal 2 can be maintained high at the initial stage of crystal growth where the crystal starts to grow on the lower surface 2B of the seed crystal 2, the growth of miscellaneous crystals around the seed crystal 2 is suppressed. can do.
- the length of the portion of the suppressing member 8 that is immersed in the solution 6 may be set to be longer than the thickness of the crystal grown on the lower surface 2B.
- a second suppressing member 50 may be provided in the crucible 5.
- the second suppression member 50 may be provided integrally with the crucible 5 or may be separately attached to the crucible 5.
- the second suppression member 50 can be selected from the same material as the suppression member 8, for example.
- the second suppressing member 50 is located above the seed crystal 2 and below the suppressing member 8 when the seed crystal 2 comes into contact with the solution 6.
- the second suppressing member 50 is configured such that the opening is larger than the outer periphery of the seed crystal 2 and the opening is smaller than the outer periphery of the suppressing member 8.
- the second suppressing member 50 in the crucible 5, it is possible to suppress the vapor of the solution 6 from moving upward. Moreover, since the 2nd suppression member 50 is arrange
- the structure in which the second suppression member 50 is disposed between the seed crystal 2 and the suppression member 8 has been described, but the structure may be disposed above the suppression member 5. In that case, what is necessary is just to arrange
- the holding member 30 includes a first holding portion 30a and a second holding portion 30b, as compared with the holding member 3 of the first embodiment. Is different.
- the holding member 30 (the first holding portion 30a and the second holding portion 30b) can be selected from the same material as the holding member 3 described above.
- As the first holding part 30a a lower surface having an area smaller than the upper surface 2A of the seed crystal 2 can be used.
- the structure of the suppressing member 8 of the holding body 1 of the first embodiment can be used for the second holding unit 30b.
- the second holding portion 30 b is set so that the outer periphery is smaller than the inner periphery of the opening 5 a of the crucible 5 and the outer periphery is larger than the outer periphery of the seed crystal 2.
- the lateral width Re1 of the second holding portion 30b is set to be smaller than the lateral width (interval between inner wall surfaces) Re2 of the crucible 5 and larger than the lateral width Re3 of the seed crystal 2.
- the relationship between Re1, Re2, and Re3 is “Re3 ⁇ Re1 ⁇ Re2”.
- the lateral width Re1 of the second holding unit 30b may be determined by the distance Re4 between the outer surface 30bB and the inner wall surface 5A of the second holding unit 30b and the amount of steam generated from the solution 6.
- the interval Re4 can be set to be 1.5 mm or more and 2 cm or less, for example. Therefore, the second holding unit 30b can be set so that the lateral width is, for example, not less than 4 cm and not more than 30 cm.
- the length of the second holding unit 30b is set to be longer than the distance from the opening 5a to the liquid level 6A of the solution 6 when the second holding unit 30b is inserted into the crucible 5, Good.
- the length of the second holding part 30b can be set to, for example, 5 cm or more and 30 cm or less.
- maintenance part 30b may be comprised integrally, for example, may be joined by the carbon adhesive material.
- the seed crystal 2 is attached to the second holder 30b via the first holder 30a. Since the holding body 100 has the second holding portion 30b whose outer periphery is smaller than the inner periphery of the opening 5a and whose outer periphery is larger than the seed crystal 2, a part of the lower surface 30bA of the second holding portion 30b However, it will be exposed from the seed crystal 3. Therefore, when the crystal is grown on the lower surface 2B of the seed crystal 2, the radiant heat Th from the solution 6 is reflected in the exposed portion of the lower surface 30bA in the direction of the liquid surface 6A as shown in FIG. be able to.
- the temperature of the liquid surface 6A around the seed crystal 2 can be made difficult to decrease, the temperature near the liquid surface 6A of the solution 6 can be maintained, and miscellaneous crystals grow around the seed crystal 2. This can be suppressed.
- the second holding part 30b is set to such a size, the distance Re4 between the crucible 5 and the inner wall surface 5A can be reduced.
- the distance Re4 between the outer side surface 30bB of the second holding part 30b and the inner wall surface 5A of the crucible 5 it is possible to make it difficult for the vapor Mo from the solution 6 to escape as shown in FIG.
- the reason for this is that when the distance Re4 is reduced, the movement of the steam Mo is inhibited by the second holding part 30b and the total amount of the steam Mo that escapes from the crucible 5 can be reduced, or the steam Mo along the exposed portion of the lower surface 30bA is reduced. For example, it is easy to flow to the solution 6 side along the side surface 5A. Therefore, since the vapor Mo from the solution 6 is confined in the space between the liquid surface 6A and the lower surface 30bA, the amount of vapor Mo from the solution 6 can be reduced, and vaporization generated near the liquid surface 6A. Heat can be reduced. As a result, the temperature near the liquid level 6A can be maintained, and miscellaneous crystals growing near the seed crystal 2 can be suppressed.
- the amount of evaporation from the solution 6 can be reduced in this way, the composition of the solution 6 can be maintained stably. As a result, even when the crystal growth is performed for a long time, variation in composition or bunching can be suppressed in the crystal to be grown.
- the second holding portion 30b is such that the exposed portion 30bC of the lower surface 30bA exposed from the upper surface of the seed crystal 2 is above the holding portion 30bD of the lower surface 30bA that indirectly holds the seed crystal 2. It may be inclined toward. The inclination of the exposed portion 30bC is set to be, for example, 1 ° or more and 10 ° or less with respect to the holding portion 30bD.
- the radiant heat Th from the solution 6 is changed to a meniscus 6A ′ in which a part of the solution 6 extends along the inner wall surface 5A as shown in FIG. Can be easily hit.
- the temperature in the vicinity of the meniscus 6A ′ can be maintained, and the growth of miscellaneous crystals in the vicinity of the meniscus 6A ′ or the meniscus 6A ′ itself can be prevented from becoming miscellaneous crystals.
- the exposed portion 30bC is inclined upward as described above, even if the second holding portion 30b is at a lower temperature than the air inside the crucible 5, the exposed portion 30bC is removed from the liquid surface 6A.
- the temperature near the liquid surface 6A of the solution 6 can be made difficult to decrease.
- the exposed portion 30bC may be inclined downward from the holding portion 30bD.
- the radiant heat Th can be easily reflected in the direction in which the seed crystal 2 exists, and the temperature of the solution 6 in the vicinity of the seed crystal 2 can be made difficult to decrease.
- the steam Mo along the lower surface 3A is moved along the inner wall surface 5A. It is possible to make it easier for the steam to travel outside the crucible 5.
- the second holding portion 30b may have a cavity 300 located above the exposed portion 30bC of the lower surface 30bA exposed from the upper surface of the seed crystal 2.
- the cavity 300 can be configured by a shaft member 30ba and a shield member 30bb.
- a columnar member can be used as the shaft member 30ba
- a bowl-shaped member such as the crucible 5 can be used as the shield member 30bb.
- the temperature of the seed crystal 2 needs to be lower than the temperature of the solution 6 in the solution growth method, it is necessary to transfer the heat of the seed crystal 2 to the holding member 30. That is, by setting the holding member 30 to a temperature lower than that of the seed crystal 2, the temperature of the seed crystal 2 can be lowered efficiently, which can contribute to the quality of the crystal growing on the lower surface 2B.
- the RF energy of the coil 13 can be attenuated by the cavity 300 by forming the cavity 300 in the second holding portion 30b as in this modification.
- the RF energy of the coil 13 is attenuated by the cavity 300, so that the temperature rise of the shaft member 30ba can be suppressed.
- the lower surface 30bA of the second holding portion 30b indicates the entire region surrounded by the outer periphery of the shield member 30ba, and for example, the seed crystal 2 includes the shaft member 30ba and the shaft member 30ba so as to straddle the cavity 300. It may be held on the lower surface of the shield member 30ba.
- the cavity 300 may be filled with a material having a lower thermal conductivity than the second holding portion 30b, more specifically, a heat insulating material 350.
- the heat insulating material 350 does not need to fill all of the cavities 300, and there may be some space in the cavities 300. More preferably, a material having a lower thermal conductivity than air is used for the heat insulating material 350.
- the crystal growth method of the present invention includes a first preparation step, a second preparation step, and a growth step.
- First preparation step and second preparation step In the first preparation step, a crucible 5 for crystal growth having an opening 5a at the upper end and containing a silicon solution 6 containing carbon therein is prepared. Moreover, the above-mentioned holding body 1 is prepared.
- the holding body 1 is put into the inside from the opening 5a of the crucible 5 and the restraining member 8 is positioned inside together with the seed crystal 2, while the lower surface 2B of the seed crystal 2 is placed. Is brought into contact with the solution 6 and then the holding body 1 is pulled up. Thus, a silicon carbide crystal can be grown from the solution 6 on the lower surface 2B of the seed crystal 2.
- a crystal is grown on the lower surface 2B of the seed crystal 2 using the holding body 1 having the suppressing member 8, so that a miscellaneous crystal grows in the vicinity of the seed crystal 2. Since it can suppress, the crystal grown on the lower surface 2B can be enlarged or lengthened. That is, since the crystal can be made larger or longer than before, the productivity of the crystal to be grown can be improved.
- the crucible 5 is disposed inside the crucible container 10.
- the crucible container 10 has a function of holding the crucible 5.
- a heat insulating material 11 is disposed between the crucible container 10 and the crucible 5.
- the heat insulating material 11 surrounds the crucible 5.
- the heat insulating material 11 suppresses heat radiation from the crucible 5 and contributes to maintaining the temperature of the crucible 5 stably.
- the crucible 5 has a function as a vessel for melting the raw material of the silicon carbide single crystal to be grown.
- a solution 6 in which carbon is dissolved therein is stored using molten silicon as a solvent.
- a solution growth method is employed, and crystals are grown by creating a state close to thermal equilibrium inside the crucible 5.
- the crucible 5 is heated by the heating mechanism 12.
- the heating mechanism 12 of the present embodiment employs an induction heating method in which the crucible 5 is heated by electromagnetic induction, and includes a coil 13 and an AC power supply 14.
- the crucible 5 is made of a material mainly composed of carbon (graphite), for example.
- a solution 6 is arranged in the crucible 5.
- the solution 6 is obtained by dissolving carbon, which is an element constituting a silicon carbide crystal grown on the lower surface 2B of the seed crystal 2, in a solution of silicon, which is also an element constituting the silicon carbide crystal.
- the solubility of the element that becomes the solute increases as the temperature of the element that becomes the solvent increases. For this reason, by making the temperature of the lower surface 2B of the seed crystal 2 slightly lower than the temperature of the solution 6, the temperature of the solution 6 in which many solutes are dissolved in the solvent at a high temperature is lowered in the vicinity of the seed crystal 2. Solute begins to precipitate at the thermal equilibrium.
- a silicon carbide crystal can be grown on the lower surface 2B of the seed crystal 2 by utilizing precipitation due to this thermal equilibrium.
- the coil 13 is formed of a conductor and is wound around the crucible 5.
- the AC power supply 14 is for flowing an alternating current through the coil 13, and the heating time to the set temperature in the crucible 5 can be shortened by flowing a larger alternating current.
- the crucible 5 is heated by an induction heating method.
- the electromagnetic field may generate heat by causing an induced current to flow through the solution 6 itself.
- the solution 6 itself generates heat as described above, the crucible 5 itself does not need to generate heat.
- the seed crystal 2 is supplied to the solution 6 in the crucible 5 by the transport mechanism 15.
- the transport mechanism 15 also has a function of carrying out the crystal grown on the lower surface 2B of the seed crystal 2.
- the transport mechanism 15 includes a holding member 3 and a power source 16.
- the seed crystal 2 and the crystal grown on the lower surface 2B of the seed crystal 2 are carried in and out via the holding member 3.
- the seed crystal 2 is attached to the lower surface 3A of the holding member 3.
- the movement of the holding member 3 is controlled in the vertical direction (D1, D2 direction) by the power source 16.
- the AC power source 14 of the heating mechanism 12 and the power source 16 of the transport mechanism 15 are connected to the control unit 17 and controlled. That is, in the crystal growth apparatus 4, the heating and temperature control of the solution 6 and the carry-in / out of the seed crystal 2 are controlled by the control unit 17 in conjunction with each other.
- the control unit 17 includes a central processing unit and a storage device such as a memory, and is composed of, for example, a known computer.
- the holding member 3 of the holding body 1 described above is attached to the transport mechanism 15 of the crystal growth apparatus 4 of the present embodiment. Then, the lower surface 2B of the seed crystal 2 fixed to the lower surface 3A of the holding member 3 can be brought into contact with the solution 6 to grow a crystal on the lower surface 2B. In the crystal growth apparatus 4 of this embodiment, the above-described holding body 1 is attached to the transport mechanism 15 to grow a crystal.
- the crystal growth apparatus 1 having the above-described holding body 1 can suppress the growth of miscellaneous crystals in the vicinity of the seed crystal 2, the crystal to be grown can be increased in size or lengthened.
- the present invention is not limited to the above embodiments and modifications, and may be implemented in various modes.
- the suppressing member may be fixed only to the crucible (configuration having only the second holding member).
- the suppression member can be set to have an opening larger than the outer periphery of the seed crystal.
- the suppressing member may be attached only to the crucible container 10. In this case, what is necessary is just to arrange
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Abstract
Description
保持体1は、種結晶2、保持部材3および抑制部材8によって主に構成されている。保持体1は、図18に示すような、結晶成長装置4に取り付けて用いられるものである。
抑制部材8は、図5に示すように、保持部材3の側面3Bから下方向(D1方向)に傾いていてもよい。具体的には、抑制部材8が、種結晶2の上面2Aに対して傾斜している。保持部材3の側面3Bと抑制部材8との傾斜角度αは、例えば90°よりも小さくなるように設定することができる。抑制部材8を下方向に傾斜させることによって、蒸気9を種結晶2の上面2Aおよび側面2C側に反射させやすくすることができる。その結果、種結晶2の上面2Aおよび側面2C付近に成長する雑晶をさらに抑制することができ、下面2Bに成長させる結晶を大型化または長尺化することができる。
抑制部材8は、図6に示すように、保持部材3の側面3Bから外周へ向かう途中に、下方向に屈曲した屈曲部8aを有していてもよい。ここで、以下の説明において、抑制部材8のうち、屈曲部8aよりも外周側に位置する抑制部材8を屈曲領域8a’と称する。
図8に示すように、抑制部材8の屈曲領域8a’は、その端部が溶液6に浸かるように配置されていてもよい。具体的には、保持体1は、抑制部材8の一部が90°に屈曲した屈曲領域8a’の端部が、上下方向において種結晶2の下面2Bよりも下方に位置するように配置されていてもよい。
さらに、図9に示すように、坩堝5に第2抑制部材50が設けられていてもよい。第2抑制部材50は、坩堝5と一体的に設けられていてもよいし、別途坩堝5に取り付けられていてもよい。第2抑制部材50は、例えば、抑制部材8と同じ材料から選択することができる。
本実施形態に係る保持体100は、図9に示すように、第1実施形態の保持部材3と比較して、保持部材30が、第1保持部30aおよび第2保持部30bで構成されている点で相違する。
第2保持部30bは、図13(a)に示すように、種結晶2の上面から露出した下面30bAの露出部分30bCが、種結晶2を間接的に保持する下面30bAの保持部分30bDから上方に向かって傾斜していてもよい。露出部分30bCの傾斜は、保持部分30bDに対して、例えば1°以上10°以下となるように設定される。
第2保持部30bは、図15に示すように、種結晶2の上面から露出した下面30bAの露出部分30bCの上方に位置する空洞300を有していてもよい。空洞300は、図15に示すように、軸部材30baおよびシールド部材30bbによって構成することができる。本実施形態では、軸部材30baとして柱状のものを用いることができ、シールド部材30bbとして、例えば坩堝5のような碗状のものを用いることができる。
さらに、図17に示すように、空洞300に第2保持部30bよりも熱伝導率の低い材料、より具体的には断熱材料350が充填されていてもよい。断熱材料350は、空洞300のすべてを充填している必要はなく、空洞300内に一部空間があってもよい。さらに好ましくは、断熱材料350には、空気よりも熱伝導率の低い材料を用いるとよい。このような断熱材料350が空洞300に充填されていることによって、コイル13のRFエネルギーが空洞300内の断熱材料350でさらに減衰されることとなり、軸部材30baの温度が上昇することを抑制することができる。
次に、本発明の結晶成長方法を説明する。本発明の結晶成長方法は、第1準備工程、第2準備工程および成長工程を有している。
第1準備工程では、上端に開口部5aを有し、炭素を含む珪素の溶液6を内部に収容した結晶成長用の坩堝5を準備する。また、上述の保持体1を準備する。
次に、下述するような結晶成長装置4において、保持体1を坩堝5の開口部5aから内部に入れて、抑制部材8を種結晶2とともに内部に位置させながら、種結晶2の下面2Bを溶液6に接触させてから保持体1を引き上げる。これによって、種結晶2の下面2Bに溶液6から炭化珪素の結晶を成長させることができる。
次に、本発明の実施形態に係る結晶成長装置4を、図17を参照しつつ説明する。坩堝5は、坩堝容器10の内部に配置されている。坩堝容器10は、坩堝5を保持する機能を担っている。この坩堝容器10と坩堝5との間には、保温材11が配置されている。この保温材11は、坩堝5の周囲を囲んでいる。保温材11は、坩堝5からの放熱を抑制し、坩堝5の温度を安定して保つことに寄与している。
Claims (11)
- 上端に開口部を有する坩堝の内部に収容された炭素を含む珪素の溶液に種結晶の下面を接触させて該下面に結晶を成長させる溶液成長法に用いられる保持体であって、
下面に前記種結晶を保持する保持部材と、
該保持部材の下面に保持された、該下面よりも大きい上面を持つ、炭化珪素からなる前記種結晶と、
前記保持部材の側面に固定されるとともに、平面視して前記側面から前記種結晶の外周よりも外側に連続する、前記溶液からの蒸気の上方への移動を抑制する抑制部材とを有する保持体。 - 前記抑制部材は、前記保持部材の側面から下方向に傾いている請求項1に記載の保持体。
- 前記保持部材および前記抑制部材は炭素からなるとともに、前記保持部材に前記抑制部材が炭素を含む接着材で固定されている請求項1または2に記載の保持体。
- 前記抑制部材は、前記保持部材の側面から外周へ向かう途中に、下方向に屈曲した屈曲部を有する請求項1~3のいずれかに記載の保持体。
- 前記屈曲部が前記種結晶の外周よりも外側に配置されている請求項4に記載の保持体。
- 前記保持部材は、前記種結晶の上面よりも小さい下面で前記種結晶を保持する第1保持部と、該第1保持部の上面に固定された、平面視して前記種結晶の外周よりも大きい第2保持部とからなる請求項1に記載の保持体。
- 前記第2保持部は、下面の一部が前記第1保持部の上面から露出しており、この露出部分が、下面のうち前記第1保持部の上面を保持する保持部分から上方に向かって傾斜している請求項6に記載の保持体。
- 前記第2保持部は、下面の一部が前記第1保持部の上面から露出しており、この露出部分の上方に位置する内部に空洞を有する請求項6または7に記載の保持体。
- 前記空洞に前記第2保持部よりも熱伝導率の低い材料が充填されている請求項8に記載の保持体。
- 上端に開口部を有し、炭素を含む珪素の溶液を内部に収容した結晶成長用の坩堝を準備する第1準備工程と、
請求項1~9のいずれかに記載の保持体を準備する第2準備工程と、
前記保持体を前記坩堝の前記開口部から前記内部に入れて、前記抑制部材を前記種結晶とともに前記内部に位置させながら、前記種結晶の下面を前記溶液に接触させてから前記保持部材を引き上げることによって、前記種結晶の下面に前記溶液から炭化珪素の結晶を成長させる成長工程と
を有する結晶成長方法。 - 上端に開口部を有し、炭素を含む珪素の溶液を内部に収容する結晶成長用の坩堝と、
該坩堝の前記開口部から前記内部に出し入れ可能な、下面に該下面よりも大きい上面を持つ種結晶を保持する保持部材と、
該保持部材の側面に固定されるとともに、平面視して前記側面から前記種結晶の外周よりも外側に連続する、前記溶液からの蒸気の上方への移動を抑制する抑制部材とを有する結晶成長装置。
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Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08175896A (ja) * | 1994-12-22 | 1996-07-09 | Tdk Corp | 単結晶の製造方法及び装置 |
JP2001106600A (ja) * | 1999-10-12 | 2001-04-17 | Mitsubishi Cable Ind Ltd | 炭化硅素結晶の液相成長方法 |
JP2006131433A (ja) * | 2004-11-02 | 2006-05-25 | Sumitomo Metal Ind Ltd | 炭化珪素単結晶の製造方法 |
JP2006232570A (ja) * | 2005-02-22 | 2006-09-07 | Hitachi Cable Ltd | GaAs単結晶の製造方法 |
JP2008001537A (ja) * | 2006-06-20 | 2008-01-10 | Toyota Motor Corp | 炭化硅素単結晶の製造方法 |
JP2008105896A (ja) * | 2006-10-25 | 2008-05-08 | Toyota Motor Corp | SiC単結晶の製造方法 |
WO2011040240A1 (ja) * | 2009-09-29 | 2011-04-07 | 富士電機ホールディングス株式会社 | SiC単結晶およびその製造方法 |
JP2011251881A (ja) * | 2010-06-03 | 2011-12-15 | Toyota Motor Corp | SiC単結晶の製造方法 |
JP2012136386A (ja) * | 2010-12-27 | 2012-07-19 | Sumitomo Metal Ind Ltd | SiC単結晶の製造装置、製造装置に用いられる治具、及びSiC単結晶の製造方法 |
JP2013001619A (ja) * | 2011-06-20 | 2013-01-07 | Nippon Steel & Sumitomo Metal Corp | 溶液成長法によるSiC単結晶の製造装置、当該製造装置を用いたSiC単結晶の製造方法及び当該製造装置に用いられる坩堝 |
JP2013075771A (ja) * | 2011-09-29 | 2013-04-25 | Toyota Motor Corp | SiC単結晶の製造方法及び製造装置 |
JP2013112553A (ja) * | 2011-11-28 | 2013-06-10 | Nippon Steel & Sumitomo Metal Corp | SiC単結晶の製造方法及びSiC単結晶の製造装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2620999B2 (ja) * | 1991-10-17 | 1997-06-18 | 信越半導体株式会社 | 単結晶引上装置 |
JP2003221299A (ja) * | 2002-01-31 | 2003-08-05 | Mitsui Chemicals Inc | 光学用大型ニオブ酸リチウム単結晶およびその製造方法、並びに該製造方法に用いられる製造装置 |
JP5346788B2 (ja) * | 2009-11-30 | 2013-11-20 | 昭和電工株式会社 | 炭化珪素単結晶の製造方法 |
JP5170127B2 (ja) * | 2010-02-18 | 2013-03-27 | トヨタ自動車株式会社 | SiC単結晶の製造方法 |
JP2011195360A (ja) * | 2010-03-18 | 2011-10-06 | Sumitomo Electric Ind Ltd | 坩堝、結晶製造装置、および支持台 |
JP5355533B2 (ja) * | 2010-11-09 | 2013-11-27 | 新日鐵住金株式会社 | n型SiC単結晶の製造方法 |
-
2013
- 2013-04-26 JP JP2014512711A patent/JP6174013B2/ja not_active Expired - Fee Related
- 2013-04-26 US US14/397,179 patent/US20150068444A1/en not_active Abandoned
- 2013-04-26 WO PCT/JP2013/062393 patent/WO2013161999A1/ja active Application Filing
-
2016
- 2016-03-08 JP JP2016045030A patent/JP2016130211A/ja not_active Ceased
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08175896A (ja) * | 1994-12-22 | 1996-07-09 | Tdk Corp | 単結晶の製造方法及び装置 |
JP2001106600A (ja) * | 1999-10-12 | 2001-04-17 | Mitsubishi Cable Ind Ltd | 炭化硅素結晶の液相成長方法 |
JP2006131433A (ja) * | 2004-11-02 | 2006-05-25 | Sumitomo Metal Ind Ltd | 炭化珪素単結晶の製造方法 |
JP2006232570A (ja) * | 2005-02-22 | 2006-09-07 | Hitachi Cable Ltd | GaAs単結晶の製造方法 |
JP2008001537A (ja) * | 2006-06-20 | 2008-01-10 | Toyota Motor Corp | 炭化硅素単結晶の製造方法 |
JP2008105896A (ja) * | 2006-10-25 | 2008-05-08 | Toyota Motor Corp | SiC単結晶の製造方法 |
WO2011040240A1 (ja) * | 2009-09-29 | 2011-04-07 | 富士電機ホールディングス株式会社 | SiC単結晶およびその製造方法 |
JP2011251881A (ja) * | 2010-06-03 | 2011-12-15 | Toyota Motor Corp | SiC単結晶の製造方法 |
JP2012136386A (ja) * | 2010-12-27 | 2012-07-19 | Sumitomo Metal Ind Ltd | SiC単結晶の製造装置、製造装置に用いられる治具、及びSiC単結晶の製造方法 |
JP2013001619A (ja) * | 2011-06-20 | 2013-01-07 | Nippon Steel & Sumitomo Metal Corp | 溶液成長法によるSiC単結晶の製造装置、当該製造装置を用いたSiC単結晶の製造方法及び当該製造装置に用いられる坩堝 |
JP2013075771A (ja) * | 2011-09-29 | 2013-04-25 | Toyota Motor Corp | SiC単結晶の製造方法及び製造装置 |
JP2013112553A (ja) * | 2011-11-28 | 2013-06-10 | Nippon Steel & Sumitomo Metal Corp | SiC単結晶の製造方法及びSiC単結晶の製造装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016056059A (ja) * | 2014-09-09 | 2016-04-21 | トヨタ自動車株式会社 | SiC単結晶製造装置 |
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