WO2013015093A1 - 基板製造装置 - Google Patents
基板製造装置 Download PDFInfo
- Publication number
- WO2013015093A1 WO2013015093A1 PCT/JP2012/067273 JP2012067273W WO2013015093A1 WO 2013015093 A1 WO2013015093 A1 WO 2013015093A1 JP 2012067273 W JP2012067273 W JP 2012067273W WO 2013015093 A1 WO2013015093 A1 WO 2013015093A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- thin film
- substrate
- film material
- temperature
- nozzle
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/26—Processes for applying liquids or other fluent materials performed by applying the liquid or other fluent material from an outlet device in contact with, or almost in contact with, the surface
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/01—Tools for processing; Objects used during processing
- H05K2203/0104—Tools for processing; Objects used during processing for patterning or coating
- H05K2203/0126—Dispenser, e.g. for solder paste, for supplying conductive paste for screen printing or for filling holes
Definitions
- the present invention relates to a substrate manufacturing apparatus for forming a thin film by discharging a heated thin film material from a nozzle hole toward a base substrate.
- a technique is known in which a thin film material is ejected from a nozzle head to form a thin film having a predetermined pattern on the surface of a base substrate as an object (for example, Patent Document 1).
- the object on which the thin film is to be formed is, for example, a printed circuit board, and the thin film material is a solder resist.
- the object In order to move the object relative to the nozzle head, the object is held on a movable stage such as an XY stage.
- the liquid thin film material is supplied from the circulation device to the nozzle head through the supply system piping, and the excess thin film material is recovered to the circulation device through the recovery system piping.
- the temperature of the thin film material In order to keep the volume of the droplet of the thin film material discharged from the nozzle hole constant, it is preferable to make the temperature of the thin film material equal to the target temperature in the nozzle head. Considering a decrease in temperature in the pipe that transports the thin film material to the nozzle head, the thin film material must be heated to a temperature higher than the target temperature in the nozzle head on the upstream side of the circulation system. However, if the temperature of the thin film material is too high, the thin film material may be altered (specifically, hardened).
- An object of the present invention is to provide a substrate manufacturing apparatus that can suppress an excessive increase in the temperature of a thin film material and can approach a target temperature at the position of a nozzle hole.
- a coating stage for holding a base substrate on which a thin film is to be formed;
- a nozzle unit that discharges droplets of a thin film material from a plurality of nozzle holes toward the base substrate, facing the base substrate held on the coating stage;
- a reservoir tank for storing thin film materials;
- a supply system for supplying the thin film material from the reservoir tank to the nozzle unit;
- a first heat source for heating the reservoir tank;
- a first temperature sensor for measuring the temperature of the reservoir tank;
- a second heat source for heating at least one location of the supply system;
- a second temperature sensor that measures the temperature of at least one location of the supply system; Based on the measurement results of the first temperature sensor and the second temperature sensor, the temperature of the thin film material in the reservoir tank and the temperature of the thin film material flowing through the supply system are within the target temperature range.
- a temperature control device for controlling the first heat source and the second heat source.
- the temperature of the thin film material is controlled so as to be within the target temperature range, the temperature of the thin film material is brought close to the target temperature at the position of the nozzle hole, and the excessive temperature of the thin film material is upstream of the supply path of the thin film material. The rise can be suppressed.
- FIG. 1 is a schematic diagram of a thin film forming apparatus according to a first embodiment.
- FIG. 2 is a plan view of a support plate of the thin film forming apparatus according to the first embodiment.
- FIG. 3 is a bottom view of the support plate of the thin film forming apparatus according to the first embodiment.
- FIG. 4 is a cross-sectional view of the separator of the thin film forming apparatus according to the first embodiment and components mounted therein.
- FIG. 5 is a schematic view of a circulator of the thin film forming apparatus according to the first embodiment.
- FIG. 6 is a cross-sectional view of a supply pipe of the thin film forming apparatus according to the first embodiment.
- FIG. 7 is a side view of a spiral portion of a supply pipe of a thin film forming apparatus according to a modification of the first embodiment.
- FIG. 8 is a schematic view of a thin film forming apparatus according to the second embodiment.
- FIG. 9 is a schematic view of a thin film forming apparatus according to the third embodiment.
- FIG. 10 is a schematic view of a substrate manufacturing apparatus according to the fourth embodiment.
- FIG. 11 is a side view of the substrate manufacturing apparatus according to the fifth embodiment.
- 12A and 12B are a bottom view and a cross-sectional view of one nozzle head of the thin film material discharge device, respectively.
- FIG. 13 is a side view of the thin film material discharge device and the base substrate.
- FIG. 14A is a diagram two-dimensionally showing raster format image data of a thin film pattern to be formed
- FIG. 14B is a side view of a nozzle head and a base substrate
- FIG. 15A is a diagram two-dimensionally showing the thin film pattern formed on the printed wiring board as raster format image data
- FIG. 15B is a side view of the nozzle head and the printed wiring board extended in the x-axis direction.
- FIG. 16 is a block diagram of a control system of the substrate manufacturing apparatus according to the fifth embodiment.
- FIG. 17A is a diagram showing a thin film pattern formed on the base substrate as image data in a raster format in consideration of thermal expansion of the nozzle head, and FIG.
- FIG. 17B is a side view of the nozzle head and the base substrate.
- FIG. 18 is a plan view of the base substrate and the nozzle head when a thin film pattern is formed on the base substrate.
- FIG. 19 is a schematic view of a substrate manufacturing apparatus according to the seventh embodiment.
- FIG. 20A is a schematic diagram of an alignment apparatus provided in the alignment station
- FIG. 20B is a plan view showing a substrate conveyed to the alignment station and sucked and held on a chuck plate
- FIG. 20C is a view after ⁇ correction. It is a top view which shows the board
- FIG. 21A is a schematic view of a droplet discharge device provided in a coating station, and FIG.
- FIG. 21B is a side view of the vicinity of a nozzle unit of the droplet discharge device.
- 22A is a perspective view of the nozzle unit
- FIG. 22B is a bottom view of the nozzle unit
- FIG. 22C is a schematic plan view of the nozzle unit.
- FIG. 23 is a schematic view of a substrate manufacturing apparatus according to the eighth embodiment.
- FIG. 24A is a diagram showing a bitmap based on the design value of the thin film pattern
- FIG. 24B is a diagram showing a bitmap after correction.
- FIG. 1 shows a schematic diagram of a substrate manufacturing apparatus according to the first embodiment.
- An X-direction moving mechanism 11 is supported on the base 10.
- the Y direction moving mechanism 12 is supported by the X direction moving mechanism 11.
- the X direction moving mechanism 11 moves the Y direction moving mechanism 12 in the x direction in the xy plane parallel to the horizontal plane.
- the coating stage 13 is supported by the Y-direction moving mechanism 12.
- the Y direction moving mechanism 12 moves the coating stage 13 in the y direction.
- the application stage 13 holds and attracts an object (underlying substrate) 15 on its upper surface (holding surface).
- the object 15 is a printed circuit board on which no solder resist is formed, for example.
- a thin film material discharge device 20 is disposed above the coating stage 13.
- the thin film material discharge device 20 includes a plurality of nozzle heads 21.
- the nozzle head 21 faces the object 15 held on the coating stage 13.
- a plurality of nozzle holes are formed on the surface facing the object 15.
- a droplet of the thin film material is ejected from the nozzle hole of the nozzle head 21 toward the object 15.
- the ejection of the droplet is performed by a piezoelectric element.
- a thin film pattern can be formed on the surface of the object 15 by discharging droplets from the predetermined nozzle hole at a predetermined timing while moving the object 15 in the x direction or the y direction.
- the plurality of nozzle heads 21 are supported by the support plate 24.
- a driver circuit board 22 for driving the piezoelectric element is attached to each nozzle head 21.
- a plurality of manifolds 23 are mounted on the support plate 24. For example, one manifold 23 is provided for four nozzle heads 21.
- the circulation device 40 is mounted on the support plate 24.
- a liquid thin film material is supplied from the circulation device 40 to each manifold 23 through the supply pipe 30.
- the liquid thin film material is recovered from each manifold 23 to the circulation device 40 through the recovery pipe 31.
- the circulation device 40 sends the thin film material collected through the collection pipe 31 to the supply pipe 30.
- Each of the manifolds 23 distributes the supplied thin film material to the plurality of nozzle heads 21.
- a heater (heat source) 43 is disposed in the circulation device 40.
- the heater 43 heats the circulating thin film material.
- a plurality of heaters (heat sources) 70 are also arranged around each of the supply pipe 30 and the recovery pipe 31.
- a thermometer (temperature sensor) 32 is attached to the heater 43, and a thermometer (temperature sensor) 33 is attached to each of the plurality of heaters 70.
- the outputs of the thermometers 32 and 33 are input to the temperature control device 35.
- the temperature control device 35 controls the heaters 43 and 70 based on the outputs of the thermometers 32 and 33.
- the heater 70 and the temperature sensor 33 are displayed for only one supply pipe 30, but in reality, the heater 70 and the temperature sensor 33 are included in all the supply pipes 30 and all the recovery pipes 31. Is arranged.
- the heater 70 is disposed over the entire length from the end connected to the circulation device 40 to the end connected to the manifold 23.
- the heater 70 is controlled by the temperature control device 35, whereby the temperature of the circulating thin film material can be maintained at the target temperature. If the amount of decrease in temperature when the thin film material flows through the supply pipe 30 is small, the heater 70 may not be disposed around the supply pipe 30. In addition, when the viscosity of the thin film material flowing through the recovery pipe 31 is maintained sufficiently low, the heater 70 may not be disposed around the recovery pipe 31.
- the thin film material may be heated to a temperature slightly lower than the target temperature by the heater 43 provided in the circulation device 40, and the thin film material may be heated to the target temperature by the heater 70 disposed around the supply pipe 30. .
- the thin film material is heated to the target temperature when it reaches the nozzle head 21.
- the heaters 43 and 70 may be controlled so that the thin film material reaches the target temperature in the nozzle head 21.
- the covering plate 25 covers the manifold 23, the driver circuit board 22, the supply piping 30, the recovery piping 31, the circulation device 40, and the temperature control device 35 disposed on the support plate 24.
- the coating stage 13 is arranged in a space in which the manifold 23, the driver circuit board 22, the supply pipe 30, the recovery pipe 31, the circulation device 40, and the temperature control device 35 are arranged. Isolate from space.
- the support plate 24 and the cover plate 25 are referred to as a “separator (or separator) 26”.
- a heat insulating material 27 is attached to the inner surface of the cover plate 25.
- the cover plate 25 itself may be formed of a material having a high heat insulating function.
- An external tank 48 is provided outside the separator plate 26. A liquid thin film material is accommodated in the external tank 48. When the amount of the thin film material in the circulation system including the circulation device 40 becomes small, the thin film material is replenished from the external tank 48 into the circulation system.
- the first exhaust device 50 exhausts the space in the separator plate 26.
- An outside air intake 51 is formed in the separator plate 26. The gas flowing from the outside air inlet 51 into the internal space of the separator plate 26 is exhausted by the first exhaust device 50.
- the X-direction moving mechanism 11, the Y-direction moving mechanism 12, the coating stage 13, and the thin film material discharge device 20 are stored in the enclosure 16.
- An outside air inlet 56 is formed in the enclosure 16.
- a HEPA filter is attached to the outside air inlet 56.
- the second exhaust device 55 exhausts the internal space of the enclosure 16.
- An exhaust port provided by the second exhaust device 55 is disposed on the side of the coating stage 13. For this reason, a lateral air flow is generated in the enclosure 16.
- the temperature of the space in the separator 26 rises due to the heat generated from the heater 43 in the circulation device 40 and the heater 70 for heating the supply pipe 30 and the recovery pipe 31.
- the space where the temperature rises and the space where the coating stage 13 is arranged are isolated from each other by the separator plate 26.
- the heated gas in the separator 26 can be prevented from being transported to the X-direction moving mechanism 11, the Y-direction moving mechanism 12, and the coating stage 13 by convection.
- the temperature rise of the X direction moving mechanism 11, the Y direction moving mechanism 12, and the coating stage 13 can be suppressed.
- the second exhaust device 55 generates a lateral air flow in the enclosure 16. For this reason, the relatively high temperature gas in contact with the outer surface of the separator 26 can be efficiently exhausted before reaching the coating stage 13.
- the separator 26 since the inside of the separator 26 is exhausted by the first exhaust device 50, an excessive temperature rise in the separator 26 can be prevented regardless of the presence or absence of the heat insulating material 27. In this way, the separator 26 has a function of confining gas therein. On the other hand, the heat insulating material 27 suppresses heat conduction from the space in the separator 26 to the space in which the coating stage 13 is disposed.
- the temperature increase of the X-direction moving mechanism 11, the Y-direction moving mechanism 12, and the coating stage 13 can be suppressed. Thereby, it is possible to maintain high positional accuracy of the application stage 13.
- FIG. 2 is a plan view of the support plate 24, the nozzle head 21, and the manifold 23 of the substrate manufacturing apparatus according to the first embodiment.
- Nozzle heads 21 are arranged in a matrix of 2 rows and 8 columns. Eight nozzle heads 21 are arranged in the x direction, and two nozzle heads 21 are arranged in the y direction. In the present specification, the plurality of nozzle heads 21 may be collectively referred to as “nozzle units”.
- One manifold 23 is provided for the nozzle heads 21 in two rows and two columns (four in total). The liquid thin film material is supplied from the supply pipe 30 to the supply inlet 23A of the manifold 23, and the thin film material is recovered from the recovery outlet 23B of the manifold 23 through the recovery pipe 31 to the circulation device 40 (FIG. 1). .
- An inlet 28 and an outlet 29 are formed in each nozzle head 21.
- the thin film material flowing into the supply inlet 23A of the manifold 23 branches in the manifold 23 and flows out from the four supply outlets 23C.
- the thin film materials that have flowed out of the four supply outlets 23 ⁇ / b> C are respectively transported to the inlet 28 of the nozzle head 21.
- Part of the thin film material supplied to the nozzle head 21 is ejected as droplets from the nozzle holes.
- the remaining thin film material is transported from the outlet 29 to the recovery inlet 23D of the manifold 23.
- a driver circuit board 22 is mounted on each nozzle head 21.
- the driver circuit board 22 drives the piezoelectric element in the nozzle hole under the control of the host controller.
- FIG. 3 shows a bottom view of the support plate 24 and the nozzle head 21 of the substrate manufacturing apparatus according to the first embodiment.
- the nozzle heads 21 are arranged in a matrix of 2 rows and 8 columns.
- Each of the nozzle heads 21 has two nozzle rows arranged at intervals in the y direction.
- Each nozzle row is composed of a plurality of nozzle holes 60 arranged in the x direction. In one nozzle row, nozzle holes are arranged at an equal pitch.
- the nozzle holes 60 of one nozzle row are displaced by 1/2 pitch in the x direction with respect to the nozzle holes of the other nozzle row.
- One of the two nozzle heads 21 arranged in the y direction is shifted from the other by a quarter pitch in the x direction.
- a thin film material droplet is ejected from the nozzle hole 60, so that the thin film can be obtained with a resolution corresponding to 1/4 of the nozzle hole pitch in the x direction.
- a pattern can be formed.
- a resolution corresponding to 1/8 pitch in the x direction can be realized.
- the ultraviolet light source 61 is attached between the two nozzle heads 21 arranged in the y direction and on the outside.
- the ultraviolet light source 61 irradiates the thin film material landed on the object 15 (FIG. 1) with ultraviolet rays.
- an ultraviolet curable resin is used, and is cured by being irradiated with ultraviolet rays. Thereby, a thin film pattern is formed on the surface of the object 15.
- a photocurable resin that is cured by light in a wavelength region other than the ultraviolet region may be used as the thin film material.
- a light source that emits light including a component in a wavelength region that cures the thin film material is used instead of the ultraviolet light source 61.
- the nozzle heads 21 are arranged in a matrix of 2 rows and 8 columns, but other arrangements may be used. For example, they may be arranged in a matrix of 4 rows and 4 columns, or may be arranged in one column. Further, the number of nozzle heads 21 mounted is not limited to 16, and may be any other number.
- FIG. 4 shows a cross-sectional view of the separator 26 and components mounted therein.
- the nozzle head 21 and the manifold 23 are attached to the inner surface of the support plate 24.
- a covering plate 25 covers the nozzle head 21 and the manifold 23.
- a heat insulating material 27 is attached to the inner surface of the cover plate 25.
- a space isolated from the outside is formed by the separating plate 26 constituted by the support plate 24 and the covering plate 25.
- the surface of the nozzle head 21 on which the nozzle holes are formed is exposed to the outside of the separator plate 26 through an opening formed in the support plate 24. The opening formed in the support plate 24 is blocked by the nozzle head 21.
- the thin film material is supplied from the circulation device 40 (FIG. 1) through the supply pipe 30 to the supply inlet 23A of the manifold 23.
- the thin film material provided to the manifold 23 is transported from the supply outlet 23 ⁇ / b> C of the manifold 23 to the inlet 28 of the nozzle head 21 through the supply transport path 65.
- the thin film material that has not been discharged from the nozzle holes is transported from the outlet 29 of the nozzle head 21 to the recovery inlet 23D of the manifold 23 through the recovery transport path 66.
- the thin film material that has flowed into the recovery inlet 23D of the manifold 23 is recovered from the recovery outlet 23B through the recovery pipe 31 to the circulation device 40 (FIG. 1).
- the heater (heat source) 68 heats the thin film material temporarily stored in the manifold 23.
- the temperature sensor 34 measures the temperature of the manifold 23. The detection result of the temperature sensor 34 is input to the temperature control device 35.
- a heater (heat source) 67 is also wound around the supply transport path 65 and the recovery transport path 66. The heaters 67 and 68 are controlled by the temperature control device 35.
- the supply transport path 65 and the recovery transport path 66 are shorter than the supply pipe 30 and the recovery pipe 31 that connect the circulation device 40 and the manifold 23. For this reason, the temperature drop of the thin film material when flowing through the supply transport path 65 and the recovery transport path 66 is small.
- the heater 67 may be omitted.
- the supply transport path 65 and the recovery transport path 66 may be constituted by heat insulating piping. In this case, the thin film material flowing through the supply transport path 65 and the recovery transport path 66 is insulated from the outside air.
- FIG. 5 shows a schematic diagram of the circulation device 40.
- the thin film material recovered through the recovery pipe 31 is temporarily stored in the reservoir tank 42.
- the thin film material in the reservoir tank 42 is heated by the heater 43.
- the heater 43 is controlled by the temperature control device 35.
- the circulation pump 41 sends the thin film material in the reservoir tank 42 to the supply pipe 30.
- FIG. 5 shows an example in which four supply pipes 30 are connected to one circulation pump 41. However, when the circulation capacity of the circulation pump 41 is not sufficient, two supplies to one circulation pump 41 are supplied. You may connect the piping 30 for work. In this case, two circulation pumps 41 may be prepared. Furthermore, one circulation pump 41 may be connected for each supply pipe 30.
- An external tank 48 is disposed outside the separator plate 26. When the amount of thin film material in the circulation system decreases, the thin film material is replenished from the external tank 48 to the reservoir tank 42.
- FIG. 6 shows a cross-sectional view of the supply pipe 30.
- the recovery pipe 31 also has the same cross-sectional structure as the supply pipe 30.
- a heater 70 is wound around a pipe 69 made of metal or resin. Further, a heat insulating material 71 surrounds the heater 70.
- the thermometer 33 measures the temperature of the pipe 69. For the thermometer 33, for example, a thermocouple is used. By covering the heater 70 with the heat insulating material 71, the pipe 69 can be efficiently heated.
- Example 1 the circulation device 40 (FIG. 1) heats the thin film material to a temperature slightly higher than its discharge temperature.
- discharge temperature means the temperature of the thin film material when the thin film material is discharged from the nozzle holes.
- the temperature of the thin film material is too high, it may be cured before being discharged or it may be altered. In such a case, it is not preferable to heat the thin film material to the discharge temperature or higher by the circulation device 40.
- the heater 43 heats the reservoir tank 42.
- the supply system such as the supply pipe 30 (FIG. 1) and the manifold 23 (FIG. 4) is heated by the heater 70 (FIG. 1), the heater 68 (FIG. 4), and the like.
- the temperature control device 35 (FIGS. 1 and 5) controls the heaters 68 and 70 so that the temperature of the thin film material is within the target range in the path from the reservoir tank 42 to the nozzle head 21.
- This temperature target range is set to include the target temperature. For this reason, in order to maintain the temperature (discharge temperature) of the thin film material in the nozzle head 21 at the target temperature, it is not necessary to heat the thin film material excessively. Thereby, the stable supply of the thin film material to the nozzle head 21 and the stable discharge from a nozzle hole are attained.
- FIG. 7 shows a side view of the supply pipe 30 used in the substrate manufacturing apparatus according to the modification of the first embodiment.
- the thin film material is gradually heated while flowing in the supply pipe 30 to reach the target temperature.
- the supply pipe 30 used in this modified example includes a spirally wound portion as shown in FIG. A heater 70 is also disposed in the spiral portion. By providing the supply pipe 30 in a spiral shape, the thin film material can be efficiently heated.
- the circulation device 40 heats the thin film material to a temperature about 10 ° C. lower than the target temperature.
- the temperature of the thin film material rises by about 10 ° C.
- the nozzle head 21 is reached, the temperature of the thin film material reaches the target temperature.
- the thin film material is maintained at a temperature lower than the target temperature. For this reason, it is also possible to use a thin film material with low heat resistance.
- FIG. 8 shows a schematic diagram of a substrate manufacturing apparatus according to the second embodiment.
- differences from the first embodiment shown in FIG. 1 will be described, and description of the same configuration will be omitted.
- Example 1 as shown in FIG. 1, the nozzle head 21 and the circulation device 40 were supported by the same support plate 24.
- the nozzle head 21 is supported by the support plate 24, and the circulation device 40 and the external tank 48 are supported by another support plate 75.
- the support plate 75 is fixed to the base 10.
- the support plate 24 that supports the nozzle head 21 is movable with respect to the base 10 in the height direction, for example.
- the covering plate 25 covers components such as the nozzle head 21 mounted on the support plate 24.
- Another cover plate 76 covers the circulation device 40 and the external tank 48 mounted on the support plate 75.
- a heat insulating material 77 is attached to the inner surface of the cover plate 76.
- the cover plate 76 and the support plate 75 form a space isolated from the space where the coating stage 13 is disposed.
- the circulating device 40 and the external tank 48 are accommodated in the isolated space.
- the cover plate 76 and the support plate 75 are referred to as “separator (or separator)” 80.
- the supply pipe 30 and the recovery pipe 31 connect the circulation device 40 and the manifold 23 through openings provided in the cover plates 25 and 76. Since the supply pipe 30 and the recovery pipe 31 are formed of a flexible material, there is no hindrance to the movement of the support plate 24 in the height direction.
- a bellows 78 is bridged between the opening of one cover plate 25 and the opening of the other cover plate 76.
- the bellows 78 allows a change in the relative positional relationship between the one cover plate 25 and the other cover plate 76. Furthermore, the bellows 78 suppresses the high-temperature gas in the separators 26 and 80 from leaking into the space where the coating stage 13 is disposed through the opening.
- the first exhaust device 50 exhausts not only the space in one separator 26 but also the space in the other separator 80.
- An outside air inlet 81 is formed in the cover plate 76.
- a relatively high temperature gas is exhausted by the first exhaust device 50, and a relatively low temperature gas flows into the separator 80 from the outside air inlet 81. For this reason, the excessive temperature rise of the gas in the separator 80 can be prevented.
- the external tank 48 is accommodated in a space isolated by the separator plate 80.
- a heater (heat source) 82 for heating the thin film material may also be arranged in the external tank 48.
- FIG. 9 shows a schematic diagram of a substrate manufacturing apparatus according to the third embodiment.
- differences from the second embodiment shown in FIG. 8 will be described, and description of the same configuration will be omitted.
- Example 3 the covering plates 25 and 76 of Example 2 shown in FIG. 8 are not arranged. Instead, the circulation device 40, the external tank 48, the supply pipe 30, the recovery pipe 31, and the manifold 23 are wrapped with a heat insulating material 90. A heater 70 for heating the supply pipe 30 and the recovery pipe 31 is also wrapped with a heat insulating material 90.
- the circulation system through which the thin film material circulates is surrounded by the heat insulating material 90, the total heat generation amount for heating the thin film material to the target temperature can be suppressed. For this reason, the temperature rise of the space where the coating stage 13 is disposed can be suppressed.
- a configuration in which excess thin film material is recovered from the nozzle head 21 to the circulation device 40 is employed, but it is not always necessary to recover.
- a supply device for sending the thin film material to the supply piping 30 may be used, and the recovery piping 31 may be omitted. In this case, all of the thin film material supplied to the nozzle head 21 is discharged from the nozzle hole.
- FIG. 10 shows a schematic diagram of a substrate manufacturing apparatus according to the fourth embodiment.
- one circulation device 40 is prepared for four manifolds 23.
- a circulation device 40 is prepared for each manifold 23.
- Each of the circulation devices 40 includes a reservoir tank 42 and a circulation pump 41.
- the circulation pump 41 is inserted in the supply path including the supply pipe 30, and the pump is not inserted in the recovery path.
- the circulation pump 41 includes a discharge pump 41 ⁇ / b> A inserted into the supply pipe 30 and a suction pump 41 ⁇ / b> B inserted into the recovery pipe 31.
- a heater 43 and a temperature sensor 32 are attached to each reservoir tank 42.
- a heater and a temperature sensor are attached to the supply pipe 30, the manifold 23, and the recovery pipe 31.
- the pressure applied to the thin film material staying in the nozzle head 21 can be controlled by adjusting the discharge pressure of the discharge pump 41A and the suction pressure of the suction pump 41B. Thereby, the droplet of thin film material can be stably discharged from a nozzle hole.
- Example 5 In FIG. 11, the side view of the board
- the substrate manufacturing apparatus includes a base (surface plate) 10, a frame 101, a coating stage 13, a moving mechanism 17, a thin film material discharge device 20, a CCD camera (imaging device) 100, and a discharge control device 110.
- the frame 101 is fixed to the surface plate 10 and supports the thin film material discharge device 20 and the CCD camera 100 above the coating stage 13.
- the discharge control device 110 controls the operation of the substrate manufacturing apparatus.
- the coating stage 13 is supported on the surface plate 10 via a moving mechanism 17 including, for example, an X-direction moving mechanism 11, a Y-direction moving mechanism 12, and a rotational direction moving mechanism 14.
- the rotation direction moving mechanism 14 displaces the held base substrate 15 in the rotation direction about an axis parallel to the z axis.
- the coating stage 13 is fixed by vacuum suction of the base substrate 15. Adsorption of the base substrate 15 by the coating stage 13, the X direction moving mechanism 11, the Y direction moving mechanism 12, and the rotational direction moving mechanism 14 are controlled by the discharge control device 110.
- the moving mechanism 17 may be configured by a single mechanism that can move the coating stage 13 in the x direction, the y direction, and the rotation direction.
- the frame 101 includes two support columns 101b and a beam 101c.
- the column 101b is fixed to the approximate center of the surface plate 10 in the y-axis direction.
- the beam 101c is supported by the column 10b along the x direction.
- the thin film material discharge device 20 and the CCD camera 100 are attached to the beam 101c of the frame 101.
- the thin film material discharge device 20 discharges droplets of the thin film material toward the base substrate 15 held on the coating stage 13.
- the discharge of the thin film material from the thin film material discharge device 20 is controlled by the discharge control device 110.
- the CCD camera 100 images the surface of the base substrate 15 held on the coating stage 13. An arbitrary position on the surface of the base substrate 15 can be imaged by moving the base substrate 15 by the moving mechanism 17.
- the acquired image data is transmitted to the ejection control device 110.
- the ejection control device 110 can measure the position where the thin film material should be attached to the base substrate 50 and inspect the attached thin film material based on the acquired image data. Imaging by the CCD camera 100 and transmission of the captured image data are controlled by the ejection control device 110.
- the ejection control device 110 includes a storage device 110a, and image data of a thin film pattern to be formed on the base substrate 15 is stored in the storage device 110a.
- This image data includes pattern definition data that defines a planar shape in design of the thin film pattern, and ejection control image data that is referred to when the thin film material is ejected from the nozzle head.
- the pattern definition data is Gerber format data
- the ejection control image data is raster format data.
- the discharge control device 110 moves the coating stage 13 by the moving mechanism 17 and the thin film material from the thin film material discharge device 20 based on the image data captured by the CCD camera 100 and the image data stored in the storage device 110a. To control the discharge. Thereby, a thin film pattern having a desired shape is formed on the base substrate 15.
- the base substrate 15 is moved in the x-axis and y-axis directions, and the thin film material adheres to the surface of the base substrate 15 when passing under the thin film material discharge device 20.
- the coating stage 13 is moved by the moving mechanism 17.
- a configuration in which the moving mechanism is attached to the frame 101 and the thin film material discharge device 20 is moved may be adopted.
- FIG. 12A and 12B are a bottom view and a cross-sectional view of one nozzle head 21 of the thin film material discharge device 20, respectively.
- a plurality of nozzle holes 21 ⁇ / b> N are provided on the bottom surface of the nozzle head 21.
- Two nozzle rows 21a and 21b are constituted by the plurality of nozzle holes 21N.
- the nozzle holes 21N are arranged at a pitch Pnoz in the x-axis direction at room temperature, for example, in an environment of 25 ° C.
- each of the nozzle rows 21a and 21b is composed of 192 nozzle holes 21N. That is, the nozzle head 21 has a total of 384 nozzle holes 21N.
- the nominal pitch Pnorm of the nozzle head 21 at room temperature is about 80 ⁇ m.
- the resolution along the x-axis direction of the nozzle head 21 is equivalent to about 300 dpi.
- the length (rated nozzle arrangement length) Lnorm from the nozzle hole 21N at one end to the nozzle hole 21N at the other end provided in the nozzle head 21 is about 31.5 mm.
- the center-to-center distance Pline between the nozzle holes 21N in the row 21a and the nozzle holes 21N in the other nozzle row 21b is about 5 mm.
- the opening diameter of the nozzle hole 21N is about 30 ⁇ m.
- stainless steel of JIS standard SUS303 is used for the casing of the nozzle head 21, for example.
- the nozzle head 21 includes a common transport path 21F that supplies a liquid thin film material to the plurality of nozzle holes 21N, and a tank 112 that stores the thin film material supplied to the common transport path 21F. Further, the tank 112 is provided with a heater 114 for heating the stored thin film material and a temperature sensor 113 for detecting the temperature of the heated thin film material. For example, when the temperature of the thin film material transported to the tank 112 does not reach the target temperature, the heater 114 can heat the thin film material to the target temperature.
- the operator can appropriately set the target temperature for heating the thin film material by inputting the target temperature of the thin film material to the input device 111.
- the discharge controller 110 controls heating of the thin film material up to the target temperature input to the input device 111 and detection of the temperature of the thin film material.
- a piezoelectric element is disposed in each of the nozzle holes 21N, and a thin film material is discharged from the nozzle holes 21N in response to application of a voltage to the piezoelectric elements.
- the discharge of the thin film material is controlled by the discharge controller 110.
- FIG. 12A shows an example in which two nozzle rows 21a and 21b are arranged, the number of nozzle rows may be one or three or more. By increasing the number of nozzle rows, the rated pitch Pnorm can be easily narrowed without being restricted by the common transport path 21F provided in the nozzle head 21 and the dimensions and layout of the piezoelectric elements.
- FIG. 13 shows a side view of the thin film material discharge device 20 and the base substrate 15.
- the discharge control device 110 moves the base substrate 15 with respect to the thin film material discharge device 20, for example, in the negative y-axis direction.
- the ejection control device 110 is configured to detect the piezoelectric of the specific nozzle hole 21N based on the image captured by the CCD camera 100 (FIG. 11) and the ejection control image data stored in the storage device 110a (FIG. 11). A voltage pulse is applied to the element to discharge the thin film material from the nozzle hole 21N.
- each nozzle hole 21N constituting the nozzle rows 21a and 21b discharges a thin film material by applying a voltage pulse starting at time T1.
- the discharged thin film material adheres to the positions where the y coordinate on the base substrate 15 is y1, y2.
- the nozzle hole 21N discharges the thin film material by the application of the voltage pulse starting at time T2.
- the discharged thin film material adheres to the positions where the y coordinate on the base substrate 15 is y2 and y3, respectively.
- the thin film material attached to the base substrate 15 is immediately cured by the light source 61 provided in the thin film material discharge device 20.
- a desired thin film pattern is formed on the surface of the base substrate 15.
- the distance between the base substrate 15 and the thin film material discharge device 20 is about 0.5 mm to 1 mm.
- the feed rate of the base substrate 15 is about 100 mm / s, and the discharge frequency of the thin film material is about 30 kHz.
- FIG. 14A two-dimensionally shows raster format image data of a thin film pattern to be formed.
- One pixel corresponds to a position where the thin film material discharged from one nozzle hole 21N provided in the thin film material discharge device 20 lands on the base substrate 15.
- the pixels to which the thin film material is to be landed are hatched. It is assumed that the dimension of the thin film pattern in the x-axis direction (thickness of the thin film pattern) is substantially equal to the rated nozzle array length Lnorm of the nozzle head 21.
- the ejection control device 110 uses raster definition ejection control image data from pattern definition data (eg, Gerber format data) that defines the shape of the thin film pattern stored in the storage device 110a (FIG. 11). Is generated.
- the pixels constituting the ejection control image data are arranged at a first pitch in the movement direction (y-axis direction) of the thin film material ejection device 20, and are arranged at a second pitch in the x-axis direction.
- the first pitch is calculated based on the feed rate of the base substrate 15 and the discharge frequency at which the thin film material discharge device 20 discharges the thin film material.
- the second pitch is calculated based on the rated pitch Pnorm of the nozzle head 21 (FIG. 12A).
- the discharge control device 110 discharges the thin film material from the thin film material discharge device 20 while moving the base substrate 15 in the y-axis direction relative to the thin film material discharge device 20 based on the generated discharge control image data.
- FIG. 14B shows a side view of the nozzle head 21 and the base substrate 15.
- the thin film material discharged from the nozzle hole 21N at the end on the negative side of the x axis adheres to the surface of the base substrate 15 at the position where the x coordinate is x1, and the nozzle hole 21N at the end on the positive side of the x axis
- the thin film material discharged from the substrate adheres to the surface of the base substrate 15 at the position where the x coordinate is x2.
- the inventors of the present application conducted an evaluation experiment in which a predetermined thin film pattern was formed on a printed wiring board using a photocurable solder resist as a thin film material.
- the temperature of the solder resist is from room temperature to about 70 ° C.
- the viscosity of the solder resist is high and the solder resist is not discharged from the nozzle holes.
- the solder resist temperature is about 70 ° C. to 90 ° C.
- the viscosity of the solder resist is lowered and the solder resist is discharged from the nozzle hole, but the solder resist is clogged in the nozzle hole.
- the solder resist was not stably discharged from the nozzle holes.
- the temperature of the solder resist is set to about 90 ° C. or higher, the viscosity of the solder resist is further decreased, and the solder resist is stably discharged from the nozzle holes.
- the inventors of the present application set the temperature of the solder resist to about 95 ° C., and actually formed a thin film pattern on the printed wiring board.
- FIG. 15A shows a bitmap image in which a position where one droplet of solder resist has landed corresponds to one pixel.
- the nozzle head 21 thermally expands mainly in the x-axis direction. Due to thermal expansion, the rated nozzle array length Lnorm of the nozzle head 21 varies to the actual nozzle array length Leff. For example, when solder resist heated to 95 ° C. is supplied to the nozzle head 21, the temperature of the nozzle head 21 becomes about 80 ° C.
- the thermal expansion coefficient of the stainless steel constituting the casing of the nozzle head 21 is about 17.3 ⁇ 10 ⁇ 6 / ° C.
- a thin film pattern having a planar shape different from the thin film pattern to be originally formed, specifically, a planar shape elongated in the x-axis direction is formed.
- FIG. 15B shows a side view of the nozzle head 21 and the printed wiring board 15 extended in the x-axis direction.
- the thin film material discharged from the nozzle hole 21N at the end on the negative side of the x-axis should originally adhere to the position where the x-coordinate of the surface of the printed wiring board 15 is x1, but actually the x-coordinate Is attached at the position of x3.
- the thin film material discharged from the nozzle hole 21N at the end on the positive side of the x axis should be originally attached at the position where the x coordinate of the surface of the printed wiring board 50 is x2.
- the x coordinate is attached to the position of x4.
- the extension amount of the nozzle head 21 is mainly defined by the temperature of the solder resist supplied to the nozzle head 21 and the thermal expansion coefficient of the nozzle head 21.
- the ejection control device 110 can form a pattern close to the thin film pattern to be formed on the printed wiring board by generating the raster format ejection control image data in consideration of the thermal expansion of the nozzle head 21 in advance. .
- FIG. 16 shows a block diagram of a control system of the board manufacturing apparatus according to the fifth embodiment.
- Tsr-Peff index in which the storage device 110a associates the pattern definition data defining the planar shape of the thin film pattern to be formed on the base substrate, the temperature Tsr of the thin film material (solder resist), and the actual pitch Peff of the nozzle head 21. Data is stored.
- Tsr-Th index data in which the solder resist temperature Tsr is associated with the temperature Th of the nozzle head 21 when the solder resist is supplied to the nozzle head 21 is stored.
- the relationship between the temperature Tsr of the solder resist and the actual pitch Peff of the nozzle head, or the relationship between the temperature Tsr and the temperature Th can be set in advance by measurement or the like.
- the ejection control device 110 generates raster format ejection control image data from the Gerber format pattern definition data stored in the storage device 110a.
- the pixels constituting the raster format image data are arranged at a first pitch in the scanning direction (y-axis direction) and at a third pitch in a direction orthogonal to the scanning direction.
- the first pitch is calculated based on the feed rate of the base substrate 15 and the discharge frequency of the thin film material
- the third pitch is calculated based on the actual pitch Peff of the nozzle head 21.
- the discharge controller 110 controls the heater 114 based on the input solder resist temperature information, and heats the solder resist to the input temperature. Further, a thin film pattern is formed on the base substrate 15 by controlling the thin film material ejection device 20 and the moving mechanism 17 (FIG. 11) based on the generated ejection control image data.
- FIG. 17A shows a bitmap image of the image data for discharge control generated in consideration of the thermal expansion of the nozzle head 21.
- the discharge control device 110 discharges the thin film material from the nozzle head 21 while scanning the base substrate 15 (moving in the y-axis direction) based on the image data for discharge control. A thin film pattern is formed.
- FIG. 17B shows a side view of the nozzle head 21 and the base substrate 15. Since the nozzle holes for discharging the droplets of the thin film material are determined based on the discharge control image data generated by taking into account the thermal expansion of the nozzle head 21, the positions of the x coordinates x1 and x2 to which the thin film material should be attached The droplets of the thin film material are respectively discharged from the nozzle holes 21N corresponding to. In this way, by generating the raster format ejection control image data based on the actual pitch Peff of the nozzle holes 21N of the nozzle head 21, the distortion of the planar shape of the thin film pattern caused by the thermal expansion of the nozzle head 21 is reduced. Can be prevented.
- Example 5 a thin film pattern was formed by discharging a thin film material heated to 95 ° C. from a nozzle head 21 having a housing formed of stainless steel (SUS303).
- the appropriate temperature of the thin film material varies depending on the material constituting the thin film material, the state of the supply mechanism, and the environment.
- the target temperature of the thin film material can be appropriately adjusted.
- the actual pitch Peff of the nozzle head 21 is based on the data indicating the relationship between the temperature of the thin film material supplied to the nozzle head 21 and the temperature of the casing of the nozzle head 21, and the thermal expansion coefficient of the casing of the nozzle head 21. It is possible to calculate.
- FIG. 18 shows a plan view of the base substrate 15 and the nozzle head 21 when a thin film pattern is formed on the base substrate 15.
- the area where the thin film material is to be deposited is hatched. Due to the thermal expansion of the nozzle head 21 accompanying the supply of the heated thin film material, the resolution in the x-axis direction of the nozzle head 21 decreases.
- the nozzle head 21 may be shifted in the x-axis direction to perform scanning a plurality of times. For example, in the ejection control device 110 (FIG.
- the pitch of the pixels arranged in the direction (x-axis direction) orthogonal to the scanning direction (y-axis direction) of the nozzle head 21 is 1 / of the actual pitch Peff of the nozzle head 21.
- the raster format ejection control image data is generated so as to be 2.
- the base substrate 15 is scanned in the y-axis direction. Thereafter, the base substrate 15 is shifted in the x-axis direction by 1/2 of the actual pitch Peff, and the same scanning is performed.
- a nozzle head unit including a plurality of nozzle heads 21 that are displaced in the x-axis direction may be used.
- Example 6 Next, a substrate manufacturing apparatus according to Embodiment 6 will be described. Hereinafter, differences from the fifth embodiment will be described, and description of the same configuration will be omitted.
- Example 5 the operator input the thin film material temperature Tsr from the input device 111 shown in FIG. Based on the input temperature Tsr, the ejection control device 110 calculated the actual pitch Peff of the nozzle holes of the nozzle head 21. In Example 6, the operator calculates the actual pitch Peff of the nozzle holes of the nozzle head 21 based on the temperature of the thin film material, the thermal expansion coefficient of the casing of the nozzle head 21, and the like.
- the operator inputs the calculated actual pitch Peff of the nozzle holes to the input device 111 (FIG. 16).
- the ejection control device 110 generates raster format ejection control image data based on the actual pitch Peff input by the operator and the Gerber format pattern definition data stored in the storage device 110a.
- the subsequent thin film pattern forming method is the same as that in the fifth embodiment.
- the distortion of the planar shape of the thin film pattern caused by the thermal expansion of the nozzle head 21 is reduced. Can be prevented.
- FIG. 19 shows a schematic view of a substrate manufacturing apparatus according to the seventh embodiment.
- the substrate manufacturing apparatus according to the seventh embodiment includes an alignment station 202, a coating station 203, a substrate reversing station 204, an alignment station 205, a coating station 206, ultraviolet irradiation devices 208 and 209, and lifters 211 ⁇ disposed in a housing 218. 214.
- a substrate carry-in port 201 and a substrate carry-out port 207 are provided in the housing 218 of the substrate manufacturing apparatus according to the seventh embodiment.
- the substrate manufacturing apparatus according to the seventh embodiment is used for forming a thin film pattern of a solder resist on the front and back surfaces of substrates 221 to 227 which are, for example, rectangular printed wiring boards.
- the substrate manufacturing apparatus according to the seventh embodiment includes conveyors 215 and 216 and a control device 220.
- the substrates 221 to 227 are carried into the housing 218 by the conveyor 215.
- the lifters 211 to 214 carry the substrates 221 to 227.
- the conveyor 216 carries the substrates 221 to 227 out of the housing 218.
- the operation of each station, the operations of the lifters 211 to 214, and the operations of the conveyors 215 and 216 are controlled by the control device 220.
- the control device 220 includes a storage device 220a.
- the substrates 221 to 227 are transported by the conveyor 215 and introduced into the housing 218 from the carry-in entrance 201. At this time, for example, one surface (first surface) of the substrates 221 to 227 is directed upward (Z-axis positive direction) in the figure.
- ⁇ Define a right-handed Cartesian coordinate system with the vertical upper direction in the positive direction of the Z axis.
- five stations from the alignment station 202 to the coating station 206 are sequentially arranged in the positive direction of the X axis.
- the substrates 221 to 227 carried into the housing 218 from the substrate carry-in port 201 are transported in the positive direction of the X axis as a whole via the stations 202 to 206, and from the substrate carry-out port 207 to the housing 218. It is carried outside.
- the substrates 221 to 227 carried into the housing 218 are transported to the alignment station 202 by the lifter 211.
- alignment station 202 alignment marks formed on the first surfaces of substrates 221 to 227 are detected, and alignment (positioning) of substrates 221 to 227 is performed based on the detection result.
- Aligned substrates 221 to 227 are transported to the coating station 203 by the lifter 211.
- a thin film pattern is formed on the first surfaces of the substrates 221 to 227 using, for example, an ultraviolet curable thin film material.
- the thin film material is, for example, a solder resist.
- the substrates 221 to 227 on which the thin film pattern is formed on the first surface are transported to the substrate inversion station 204 by the lifter 212.
- the substrates 221 to 227 are reversed.
- the second surface of the substrates 221 to 227 opposite to the first surface faces the positive direction of the Z axis.
- the ultraviolet light irradiation device 208 irradiates the entire first surface of the substrates 221 to 227 with ultraviolet light, and the main curing of the thin film pattern formed on the first surface of the substrates 221 to 227 is performed. Is called.
- the inversion of the substrates 221 to 227 and the irradiation of the ultraviolet rays onto the first surfaces of the substrates 221 to 227 are performed in parallel, for example.
- the inverted substrates 221 to 227 are transported to the alignment station 205 by the lifter 213.
- the alignment station 205 alignment marks formed on the second surfaces of the substrates 221 to 227 are detected, and the substrates 221 to 227 are aligned based on the detection result.
- the substrates 221 to 227 are transported to the coating station 206 by the lifter 213.
- a thin film pattern is formed on the second surfaces of the substrates 221 to 227 with an ultraviolet curable thin film material.
- the substrates 221 to 227 are transported to the conveyor 216 by the lifter 214 after the thin film pattern is formed on the second surface. Thereafter, the substrates 221 to 227 are carried out of the casing 218 from the carry-out port 207 by the conveyor 216.
- the ultraviolet irradiation device 209 irradiates the entire second surface of the substrates 221 to 227 with ultraviolet rays while being placed on the conveyor 216, and the thin film pattern formed on the second surfaces of the substrates 221 to 227 Main curing is performed.
- the ultraviolet irradiation device 209 is movable in the housing 218 so as to pass above the substrates 221 to 227 placed on the conveyor 216, and passes through the substrates 221 to 227 while passing through the substrates 221 to 227.
- the second surface is irradiated with ultraviolet rays.
- the ultraviolet irradiation device 209 may be fixedly disposed in the housing 218. In this case, when the substrates 221 to 227 are transported by the conveyor 216, the substrates 221 to 227 pass below the ultraviolet irradiation device 209. Irradiation of ultraviolet rays onto the substrates 221 to 227 is controlled by the control device 220.
- processing is performed in parallel at each of the alignment station 202, the coating station 203, the substrate inversion station 204, the alignment station 205, and the coating station 206. That is, the alignment station 202 detects the alignment mark formed on the first surface of the substrate 222 and aligns the substrate 222 with the first surface of the substrate 223 at the coating station 203. A thin film pattern such as a solder resist is formed. In the meantime, in the substrate inversion station 204, main curing of the thin film pattern formed on the first surface of the substrate 224 and inversion of the front and back of the substrate 224 are performed. In the alignment station 205, detection of alignment marks formed on the second surface of the substrate 225 and alignment of the substrate 225 are performed.
- a solder resist thin film pattern is formed on the second surface of the substrate 226.
- the conveyor 215 carries the substrate 221 on which the solder resist is not formed into the housing 218.
- the substrate 227 on the conveyor 216 is irradiated with ultraviolet rays by the ultraviolet irradiation device 209, and the conveyor 216 carries out the substrate 227 on which the solder resist pattern is formed on the front and back from the housing 218. For this reason, improvement in production efficiency can be realized.
- FIG. 20A shows a schematic view of an alignment apparatus provided in the alignment station 202.
- the alignment apparatus includes a Y stage 232, a ⁇ stage 233, and a chuck plate (coating stage) 234 that are arranged in this order from the base 231 side on a base (base) 231.
- the chuck plate 234 sucks and holds the substrate 222 transported to the alignment station 202 by the lifter 211.
- the Y stage 232 can move the held substrate 222 in the Y-axis direction.
- the ⁇ stage 233 can rotate the held substrate 222 in a plane parallel to the XY plane with an axis parallel to the Z axis as a rotation center.
- the Y stage 232, the ⁇ stage 233, and the chuck plate 234 constitute a moving mechanism that holds the substrate 222 and moves it within the alignment station 202.
- the controller 220 controls the adsorption of the substrate 222 by the chuck plate 234 and the movement of the substrate 222 by the Y stage 232 and the ⁇ stage 233.
- Alignment device includes CCD cameras 235-238.
- the CCD cameras 235 to 238 image the alignment marks formed on the substrate 222 held by the chuck plate 234. Imaging by the CCD cameras 235 to 238 is controlled by the control device 220. Image data (detection results) obtained by the CCD cameras 235 to 238 are transmitted to the control device 220.
- 20B is a plan view showing the substrate 222 conveyed to the alignment station 202 and sucked and held by the chuck plate 234.
- FIG. 20B On the substrate 222, for example, alignment marks 222a to 222d are formed at the four corners of the first surface.
- the substrate 222 transported and placed on the chuck plate 234 by the lifter 211 is moved in the negative direction of the Y axis in the alignment station 202 by driving the Y stage 232 while being sucked and held by the chuck plate 234.
- the moved substrate 222 is shown in parentheses.
- the CCD cameras 235 to 238 are arranged at positions shifted in the negative direction of the Y axis from the position of the chuck plate 234 when the lifter 211 places the substrate 222 on the chuck plate 234.
- the CCD cameras 235 to 238 have a relative positional relationship in which the alignment marks 222a to 222d formed on the substrate 222 can be imaged. After the substrate 222 is held on the chuck plate 234, the substrate 222 is moved to a position where the CCD cameras 235 to 238 can take an image by the Y stage 232.
- the CCD cameras 235 to 238 take images of the alignment marks 222a to 222d formed on the substrate 222. Image data acquired by imaging is transmitted to the control device 220.
- the control device 220 analyzes the image data acquired by the CCD cameras 235 to 238 and detects the position of the substrate 222 and the posture (orientation) related to the XY in-plane direction (in-plane direction of the substrate 222). Thereafter, for example, the posture of the substrate 222 in the XY plane direction is corrected (changed) ( ⁇ correction).
- FIG. 20B shows, as an example, a plan view of the chuck plate 234 and the substrate 222 when the substrate 222 is displaced by an angle ⁇ counterclockwise in the XY plane.
- the side connecting the apex where the alignment mark 222a is formed and the apex where the alignment mark 222d is formed is tilted by an angle ⁇ counterclockwise from the positive direction of the X axis with respect to the latter apex. Will be.
- This positional shift is detected by the control device 220 by analyzing the image data acquired by the CCD cameras 235 to 238.
- the control device 220 corrects this misalignment by rotating the ⁇ stage 233 clockwise by an angle ⁇ .
- each side of the rectangular substrate 222 is parallel to the X axis or the Y axis.
- the controller 220 drives the Y stage 232 to move the substrate 222 in the positive direction of the Y axis.
- the driving distance of the Y stage 232 is equal to the distance by which the substrate 222 is moved to the installation area of the CCD cameras 235 to 238 in order to detect the alignment marks 222a to 222d in the process shown in FIG. 20B, for example.
- the 20B shows the substrate 222 after being moved in the positive direction of the Y-axis in parentheses.
- the substrate 222 subjected to ⁇ correction is transferred to the coating station 203 by the lifter 211.
- the lifter 211 conveys the substrate 222 whose orientation in the in-plane direction of the substrate is changed by the rotation of the ⁇ stage 233 onto the stage of the coating station 203 while maintaining the orientation.
- the coating station 203 can start forming a thin film pattern on the first surface of the substrate 222 without correcting the position of the substrate 222 in the ⁇ direction. .
- the processing time at the coating station 203 can be shortened as compared with the case where ⁇ correction is performed at the coating station 203 and a thin film pattern is subsequently formed. This makes it possible to shorten the tact time and improve the production efficiency.
- the substrate 222 usually has an elongation strain, and the dimension of the substrate is different from the design value at the time of forming the thin film pattern. Therefore, the control device 220 calculates the dimensions of the substrate 222 based on the image data acquired using the CCD cameras 235 to 238 in the alignment station 202. The control device 220 generates ejection control image data based on the calculated dimensions of the substrate 222. The generated ejection control image data is stored in the storage device 220a of the control device 220. This process will be described in detail in the description of the operation of the coating station 203 below.
- FIG. 21A and 21B are schematic views of a droplet discharge device provided in the coating station 203.
- the droplet discharge device includes a base 241 installed in a posture parallel to the XY plane (horizontal plane), and an X stage 243 and a Y stage 244 that are sequentially arranged on the base 241 from the base 241 side.
- the X stage 243 can move the held substrate 223 in the X-axis direction.
- the Y stage 244 can move the held substrate 223 in the Y-axis direction.
- the X stage 243, the Y stage 244, and the chuck plate 245 constitute a moving stage.
- the moving stage holds the substrate 223 and moves it in the coating station 203.
- the controller 220 controls the adsorption of the substrate 223 by the chuck plate 245 and the movement of the substrate 223 by the X stage 243 and the Y stage 244.
- a high-function stage having the functions of the X stage 243, the Y stage 244, and the chuck plate 245 may be used.
- the frame 242 is fixed to the base 241.
- the frame 242 supports the nozzle units 247a to 247f above the chuck plate 245.
- the frame 242 includes two support columns 242a and 242b and a beam 242c.
- the support columns 242a and 242b are attached to the approximate center of the base 241 in the Y-axis direction.
- the beam 242c is supported by the columns 242a and 242b so as to be along the X-axis direction.
- the nozzle units 247a to 247f are held by the beam 242c of the frame 242 via the connecting member 246.
- Each of the nozzle units 247a to 247f includes a plurality of nozzle heads and an ultraviolet light source.
- the nozzle head discharges, for example, an ultraviolet curable thin film material as droplets toward the surface of the substrate 223 held on the moving stage.
- the thin film material is discharged while moving the substrate 223 in the Y-axis direction.
- a thin film pattern having a predetermined planar shape, for example, a solder resist pattern, is formed on the surface of the substrate 223 by the discharged thin film material.
- the surface layer portion of the thin film pattern is cured by the ultraviolet rays emitted from the ultraviolet light source. The phenomenon that only the surface layer portion is cured is referred to as “temporary curing”.
- the storage device 220a of the control device 220 stores pattern definition data (gerber format image data) that defines the planar shape of the thin film pattern to be formed on the substrate 223.
- the raster format image data generated from the pattern definition data can be used as it is when the substrate has dimensions as designed, but cannot be applied as it is when the substrate is distorted. .
- the control device 220 Based on the image data of the substrate 223 captured by the alignment station 202 from the pattern definition data, the control device 220 considers the distortion of the substrate 223 and generates raster format ejection control image data. For example, the control device 220 obtains elongation strain in the X direction and Y direction of the substrate 223 from the image data captured by the alignment station 202.
- the coordinates of the position where the droplet of the thin film material is to be landed are corrected according to the amount of expansion and contraction of the substrate 223 in the X direction.
- the coordinates of the position where the droplet of the thin film material is to be landed are corrected according to the amount of expansion and contraction of the substrate 223 in the Y direction.
- the relationship (discharge timing) between the amount of movement of the substrate 223 by the Y stage 244 and the discharge timing of the thin film material from the nozzle head is corrected. In this way, the ejection control image data in the raster format obtained by correcting the data stored in advance in the storage device 220a is stored in the storage device 220a.
- FIG. 24A and FIG. 24B show a bitmap image composed of a plurality of pixels arranged in the row direction and the column direction.
- the pixels on which the droplets of the thin film material are to be landed are shown in black.
- FIG. 24A shows a bitmap image corresponding to the design value (initial value) of the thin film pattern. Pixels that do not run around and inside the circle drawn with a solid line are stored in the storage device 220a as pixels on which droplets of the thin film material should land.
- the expansion amount in the X direction of the rectangular substrate 223 having the length in the X direction of l X and the length in the Y direction of l Y is ⁇ X
- the expansion amount in the Y direction is ⁇ Y.
- the amount of expansion / contraction occurs uniformly over the entire substrate 223
- the amount of expansion / contraction per unit length in the X and Y directions is ⁇ X / l X and ⁇ Y / I Y.
- the circumference and the inside of the circle in FIG. 24A (the area where the thin film material is not applied) are enlarged according to the size. That is, since the position where the droplet of the thin film material is landed changes on the substrate 223, the control device 220 corrects the pixel on which the droplet of the thin film material is to be landed.
- FIG. 24B shows a bitmap image after correction.
- pixels that do not run around and inside the circle drawn with a solid line are pixels to which the droplets of the thin film material after correction should be landed.
- the circle drawn with a solid line in FIG. 24A is shown with a broken line in FIG. 24B for reference.
- the bitmap data shown in FIG. 24B is newly stored in the storage device 220a as image data of the thin film pattern to be formed.
- the control device 220 discharges the thin film material from the nozzle units 247a to 247f so that the thin film material is applied to a predetermined area on the substrate 223 based on the discharge control image data stored in the storage device 220a.
- the movement of the substrate 223 by the moving stage is controlled. While the substrate 223 is moved along the Y-axis direction, ink is applied to the substrate 223 vertically below the nozzle units 247a to 247f (Z-axis negative direction).
- FIG. 21B shows a side view of the vicinity of the nozzle units 247a to 247f of the droplet discharge device.
- the nozzle units 247a to 247f have the same configuration and are fixed to the connecting member 246 at equal intervals along the X-axis direction.
- the connecting member 246 is attached to the frame beam 242c so as to be movable in the Z-axis direction.
- the nozzle units 247a to 247f are supported by the frame 242 so that the distance from the substrate 223 can be adjusted.
- the movement of the nozzle units 247a to 247f in the Z-axis direction by the connecting member 246 is controlled by the control device 220.
- the nozzle units 247a to 247f may be directly fixed to the beam 242c of the frame without using the connecting member 246.
- FIG. 22A shows a perspective view of the nozzle unit 247a.
- the nozzle unit 247a includes nozzle heads 247a1 to 247a4 and ultraviolet light sources 247a5 to 247a9 that are alternately assembled to the nozzle holder 247ac along the Y-axis direction.
- Each nozzle head 247a1 to 247a4 includes two nozzle rows arranged along the Y-axis direction.
- Each nozzle row includes a plurality of, for example, 192 nozzle holes arranged along the X-axis direction.
- the length along the X-axis direction of each nozzle row is, for example, about 30 mm. For this reason, the length along the X-axis direction of the nozzle unit 247a is also about 30 mm.
- An ultraviolet curable thin film material is discharged from each nozzle hole.
- the ultraviolet light sources 247a5 to 247a9 include light emitting diodes (LEDs), for example, and emit light having a wavelength in the ultraviolet region.
- LEDs light emitting diodes
- the ultraviolet curable thin film material discharged from the nozzle holes of the nozzle heads 247a1 to 247a4 to the substrate 223 is cured (temporarily cured) by light emitted from the ultraviolet light sources 247a5 to 247a9.
- the emission of ultraviolet light from the ultraviolet light sources 247a5 to 247a9 is controlled by the control means 220.
- FIG. 22B shows a bottom view of the nozzle unit 247a (nozzle heads 247a1 to 247a4).
- the description of the ultraviolet light sources 247a5 to 247a9 is omitted.
- nozzle holes are arranged at intervals of 160 ⁇ m along the X-axis direction.
- the nozzle hole of the nozzle row on the positive side of the Y axis is shifted by 80 ⁇ m in the positive direction of the X axis with respect to the nozzle hole of the nozzle row on the negative side of the Y axis. That is, each of the nozzle heads 247a1 to 247a4 includes 384 nozzle holes arranged in a staggered manner at intervals of 80 ⁇ m in the X-axis direction, and has a resolution corresponding to about 300 dpi.
- a piezoelectric element is attached to each nozzle hole, and droplets of a thin film material are ejected in response to application of a voltage to the piezoelectric element.
- the discharge (application of voltage) of the thin film material is controlled by the controller 220.
- two nozzle rows are provided, but the number of nozzle rows may be one or three or more.
- the nozzle heads 247a1 to 247a4 are arranged along the Y-axis direction as a whole while the relative positions are sequentially shifted in the positive direction of the X-axis. That is, the nozzle head 247a2 is displaced in the positive direction of the X axis by 20 ⁇ m with respect to the nozzle head 247a1. Similarly, the nozzle heads 247a3 and a4 are displaced in the positive direction of the X axis by 20 ⁇ m from the nozzle heads 247a2 and a3, respectively. As a result, the nozzle unit 247a includes nozzle holes arranged at intervals of 20 ⁇ m (resolution corresponding to about 1200 dpi) in the X-axis direction.
- FIG. 22C shows a schematic plan view of the nozzle units 247a to 247f.
- each of the nozzle units 247a to 247f has a droplet discharge capability in a range of about 30 mm along the X-axis direction. Moreover, it arrange
- the substrate 223 transported by the lifter 211 (FIG. 19) is held on the chuck plate 245 (FIG. 21A) in the coating station 203. While moving the substrate 223 in the negative direction of the Y axis, the target ejection position (of the thin film material) in the odd-numbered row region (the region marked with a circle in FIG. 22C) along the Y axis direction below each of the nozzle units 247a to 247f. The thin film material is discharged from the nozzle units 247a to 247f toward the target position of the droplets.
- the substrate 223 When the ejection to the target position in the odd-numbered row region is completed, the substrate 223 is moved in the X axis positive direction by, for example, 10 ⁇ m by the X stage 243. Thereafter, while moving the substrate 223 in the positive direction of the Y axis, toward the discharge target position of the even-numbered row region (the region marked with a cross in FIG. 22C) along the Y axis direction below each of the nozzle units 247a to 247f. The thin film material is discharged from the nozzle units 247a to 247f.
- a thin film pattern can be formed with a resolution equivalent to about 2400 dpi by ejecting droplets toward the target positions in the odd-numbered row region and the even-numbered row region in the forward path and the return path along the Y-axis direction.
- the X stage 243 is driven, and the substrate 223 is moved about 30 mm in the positive direction of the X axis.
- the substrate 223 is reciprocated in the Y-axis direction by the Y stage 244, and the thin film material is landed in the odd-numbered row region and the even-numbered row region in the forward path and the return path, respectively.
- a thin film pattern can be formed over the entire surface of the substrate 223 by a total of three reciprocations.
- the droplet discharge device shown in FIGS. 21A to 22C includes six nozzle units 247a to 247f.
- the number of nozzle units is not limited to six.
- the number of nozzle units may be one.
- the substrate 223 on which the thin film pattern is formed on the first surface is transferred to the substrate inversion station 204 (FIG. 19).
- the substrate inversion station 204 includes a substrate inversion device that inverts the substrate 223 and an ultraviolet irradiation device 208. While the substrate 223 is inverted by the substrate inverting device, the main curing of the thin film pattern formed on the surface by the ultraviolet rays emitted from the ultraviolet irradiation device 208 is performed. After the main curing, it is conveyed to the alignment station 205.
- the main curing is a process for solidifying the thin film pattern formed on the substrate to the inside.
- the temporary curing performed at the coating station 203 is a process for solidifying only the surface layer portion of the solder resist.
- the temporary curing prevents the thin film material adhering to the substrate from diffusing in the in-plane direction.
- the inner region of the thin film material is not completely solidified.
- the main curing the internal region of the thin film pattern is completely solidified, whereby tack (stickiness) can be prevented.
- the alignment station 205 has the same configuration and function as the alignment station 202.
- An alignment mark formed on the second surface of the substrate 223 is detected by a CCD camera, and ⁇ correction is performed. Further, the size of the substrate 223 is detected from the image data obtained by the CCD camera, and raster format ejection control image data used when forming a thin film pattern on the second surface of the substrate 223 is generated.
- the lifter 213 transports the substrate 223, which has been aligned in the rotational direction, onto the stage of the coating station 206 while maintaining the posture by the rotation of the ⁇ stage provided in the alignment station 205.
- the coating station 206 has the same configuration and function as the coating station 203. In the coating station 206, a thin film pattern is formed on the second surface of the substrate 223 based on the image data for the second surface.
- the image data for ejection control that is referred to when forming the thin film pattern on the second surface can also be created based on the image data acquired by the alignment station 202.
- the image data obtained by the alignment station 205 is used only for ⁇ correction, for example.
- ⁇ correction of the substrate 223 is performed by the alignment station 205, ⁇ correction is not necessary at the coating station 206. For this reason, the formation of the thin film pattern on the second surface can be started without performing alignment in the rotational direction on the substrate 223 conveyed to the coating station 206. Therefore, the processing time at the coating station 206 can be shortened, and the tact time can be shortened and the production efficiency can be improved.
- the substrate 223 on which the formation of the thin film pattern on the second surface has been completed is conveyed to the conveyor 216 by the lifter 214.
- the thin film pattern formed on the second surface of the substrate 223 placed on the conveyor 216 is irradiated with ultraviolet rays emitted from the ultraviolet irradiation device 209, and the thin film pattern is fully cured. Thereafter, the substrate 223 is carried out from the carry-out port 207 to the outside of the housing 218 by the conveyor 216.
- FIG. 23 shows a schematic view of a substrate manufacturing apparatus according to the eighth embodiment.
- the eighth embodiment is different from the seventh embodiment in that the substrate inversion station 204, the alignment station 205, the coating station 206, and the lifters 212 and 213 are not included.
- the substrate manufacturing apparatus according to Example 7 was able to form a thin film pattern on both surfaces of the substrates 221 to 227, whereas the substrate manufacturing apparatus according to Example 8 was only on one side of the substrates 221 to 224, for example, the first surface. A thin film pattern is formed.
- the alignment station 202 and the coating station 203 perform processing in parallel. That is, while the alignment station 202 detects the alignment mark formed on the first surface of the substrate 222 and aligns the substrate 222, the coating station 203 applies the first mark to the first surface of the substrate 223. A thin film pattern is formed.
- the conveyor 215 carries the substrate 221 on which the thin film pattern is not formed into the housing 218.
- the substrate 224 on which the formation of the thin film pattern on the first surface has been completed is transported to the conveyor 216 by the lifter 214.
- the substrate 224 placed on the conveyor 216 is irradiated with ultraviolet rays emitted from the ultraviolet irradiation device 209. Thereby, the main curing of the thin film pattern formed on the first surface is performed. Thereafter, the substrate 224 is carried out of the housing 218 from the carry-out port 207 by the conveyor 216.
- the alignment device of the alignment station 202 detects the alignment mark on the first surface of the substrate 222, and changes the orientation of the substrate 222 in the in-plane direction based on the detection result. .
- the substrate 222 whose orientation in the in-plane direction of the substrate has been changed by the alignment apparatus is transported onto the stage of the droplet discharge device of the coating station 203 while maintaining the orientation, and the substrate 221 is moved to the alignment apparatus. To the stage.
- the alignment apparatus detects an alignment mark on the first surface of the substrate 221 to be processed next, and changes the orientation of the substrate 221 in the in-plane direction of the substrate based on the detection result.
- a thin film pattern is formed on the first surface of the substrate 222.
- This series of processing is the same for the seventh embodiment. In the seventh embodiment, similar parallel processing is performed in all the stations from the alignment station 202 to the coating station 206.
- Example 8 since ⁇ correction of the substrates 221 to 224 is performed by the alignment station 202, the coating station 203 does not require ⁇ correction. Formation of a thin film pattern can be started without performing alignment with respect to the substrates 221 to 224 conveyed to the coating station 203. Therefore, the processing time at the coating station 203 can be shortened, and the tact time can be shortened and the production efficiency can be improved.
- the present invention has been described according to the first to eighth embodiments, the present invention is not limited to these.
- the movement of the substrate relative to the nozzle unit (movement in the XY plane) is performed only by the stage, but the nozzle unit may be moved relative to the stage.
- the nozzle unit can be moved relative to the stage by making the frame movable in the Y-axis direction and attaching the nozzle unit to the frame so as to be movable in the X-axis direction and the Z-axis direction.
- the stage may be moved in the X direction and the nozzle unit may be moved in the Y direction.
- the nozzle unit and the substrate may be moved relatively.
- the configuration in which only the substrate is moved in the XY plane can improve the positional accuracy of the thin film pattern compared to the configuration in which the nozzle unit is also moved in the XY plane.
- a thin film pattern of a solder resist was formed on a printed wiring board by a board manufacturing apparatus, but the board manufacturing apparatus according to Examples 1 to 8 is, for example, in touch panel manufacturing. It can be used for the purpose of forming an insulating film on a glass substrate.
Landscapes
- Engineering & Computer Science (AREA)
- Coating Apparatus (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
Description
薄膜を形成すべき下地基板を保持する塗布ステージと、
前記塗布ステージに保持された下地基板に対向し、複数のノズル孔から前記下地基板に向かって薄膜材料の液滴を吐出するノズルユニットと、
薄膜材料を蓄積するリザーバタンクと、
前記リザーバタンクから前記ノズルユニットに前記薄膜材料を供給する供給系と、
前記リザーバタンクを加熱する第1の熱源と、
前記リザーバタンクの温度を測定する第1の温度センサと、
前記供給系の少なくとも1箇所を加熱する第2の熱源と、
前記供給系の少なくとも1箇所の温度を測定する第2の温度センサと、
前記第1の温度センサ及び前記第2の温度センサの測定結果に基づき、前記リザーバタンク内の薄膜材料の温度と、前記供給系を流れる薄膜材料の温度とが、温度の目標範囲内に収まるように前記第1の熱源及び前記第2の熱源を制御する温度制御装置と
を有する基板製造装置が提供される。
図1に、実施例1による基板製造装置の概略図を示す。基台10にX方向移動機構11が支持されている。Y方向移動機構12が、X方向移動機構11に支持されている。X方向移動機構11は、Y方向移動機構12を、水平面に対して平行なxy面内のx方向に移動させる。塗布ステージ13がY方向移動機構12に支持されている。Y方向移動機構12は塗布ステージ13をy方向に移動させる。塗布ステージ13は、その上面(保持面)に、対象物(下地基板)15を保持し、吸着する。対象物15は、例えばソルダーレジストが形成されていないプリント基板である。
図8に、実施例2による基板製造装置の概略図を示す。以下、図1に示した実施例1との相違点について説明し、同一の構成については説明を省略する。
図9に、実施例3による基板製造装置の概略図を示す。以下、図8に示した実施例2との相違点について説明し、同一の構成については説明を省略する。
図10に、実施例4による基板製造装置の概略図を示す。以下、図1に示した実施例1との相違点について説明し、同一の構成については説明を省略する。実施例1では、4個のマニホールド23に対して1個の循環装置40が準備されていた。実施例4においては、マニホールド23ごとに、循環装置40が準備されている。
図11に、実施例5による基板製造装置の側面図を示す。以下、実施例1との相違点について説明し、同一の構成については説明を省略する場合がある。
次に、実施例6による基板製造装置について説明する。以下、実施例5との相違点について説明し、同一の構成については説明を省略する。
図19に、実施例7による基板製造装置の概略図を示す。実施例7による基板製造装置は、筺体218の内部に配置されるアライメントステーション202、塗布ステーション203、基板反転ステーション204、アライメントステーション205、塗布ステーション206、紫外線照射装置208、209、及び、リフタ211~214を含む。また、実施例7による基板製造装置の筺体218には、基板搬入口201及び基板搬出口207が設けられている。実施例7による基板製造装置は、例えば矩形状のプリント配線板である基板221~227の表面及び裏面に、ソルダーレジストの薄膜パターンを形成するために用いられる。また、実施例7による基板製造装置は、コンベア215、216、及び制御装置220を含む。コンベア215によって、基板221~227が筺体218の内部まで搬入される。筺体218内では、リフタ211~214が基板221~227を搬送する。コンベア216は、筺体218内から基板221~227を搬出する。各ステーションの動作、及びリフタ211~214の動作、及びコンベア215、216の動作は、制御装置220によって制御される。制御装置220は記憶装置220aを含む。
図23に、実施例8による基板製造装置の概略図を示す。実施例8は、基板反転ステーション204、アライメントステーション205、塗布ステーション206、及びリフタ212、213を含まない点で、実施例7と異なる。実施例7による基板製造装置は、基板221~227の両面に薄膜パターンを形成することができたが、実施例8による基板製造装置は、基板221~224の片面、たとえば第1の面のみに薄膜パターンを形成する。
11 X方向移動機構
12 Y方向移動機構
13 塗布ステージ
14 回転方向移動機構
15 対象物(下地基板)
16 エンクロージャ
17 移動機構
20 薄膜材料吐出装置
21 ノズルヘッド
21a、21b ノズル列
21F 共通輸送路
21N ノズル孔
22 ノズルヘッドドライバ回路基板
23 マニホールド
23A 供給用流入口
23B 回収用流出口
23C 供給用流出口
23D 回収用流入口
24 支持板
25 被覆板
26 隔離板
27 断熱材
28 流入口
29 流出口
30 供給用配管
31 回収用配管
32 温度センサ(第1の温度センサ)
33 温度センサ(第2の温度センサ)
34 温度センサ
35 温度制御装置
40 循環装置
41 循環ポンプ
41A 吐出ポンプ
41B 吸引ポンプ
42 リザーバタンク
43 ヒータ(第1の熱源)
48 外付けタンク
50 第1の排気装置
51 外気取入口
55 第2の排気装置
56 外気取入れ口
60 ノズル孔
61 紫外光源
65 供給輸送路
66 回収輸送路
67、68 ヒータ
69 配管
70 ヒータ(第2の熱源)
71 断熱材
75 支持板
76 被覆板
77 断熱材
78 ベローズ
80 隔離板
81 外気取入口
82 ヒータ
90 断熱材
100 CCDカメラ
101 フレーム
101b 支柱
101c 梁
110 吐出制御装置
110a 記憶装置
111 入力装置
112 タンク
113 温度センサ
114 ヒータ
201 基板搬入口
202 アライメントステーション
203 塗布ステーション
204 基板反転ステーション
205 アライメントステーション
206 塗布ステーション
207 基板搬出口
208、209 紫外線照射装置
211~214 リフタ
215、216 コンベア
218 筺体
220 制御装置
220a 記憶装置
221~227 基板
231 ベース(基台)
232 Yステージ
233 θステージ
234 チャックプレート
235~238 CCDカメラ
241 ベース
242 フレーム
242a、242b 支柱
242c 梁
243 Xステージ
244 Yステージ
245 チャックプレート
246 連結部材
247a~247f ノズルユニット
247ac ノズルホルダ
247a1~247a4 ノズルヘッド
247a5~247a9 紫外光源
Claims (10)
- 薄膜を形成すべき下地基板を保持する塗布ステージと、
前記塗布ステージに保持された下地基板に対向し、複数のノズル孔から前記下地基板に向かって薄膜材料の液滴を吐出するノズルユニットと、
薄膜材料を蓄積するリザーバタンクと、
前記リザーバタンクから前記ノズルユニットに前記薄膜材料を供給する供給系と、
前記リザーバタンクを加熱する第1の熱源と、
前記リザーバタンクの温度を測定する第1の温度センサと、
前記供給系の少なくとも1箇所を加熱する第2の熱源と、
前記供給系の少なくとも1箇所の温度を測定する第2の温度センサと、
前記第1の温度センサ及び前記第2の温度センサの測定結果に基づき、前記リザーバタンク内の薄膜材料の温度と、前記供給系を流れる薄膜材料の温度とが、温度の目標範囲内に収まるように前記第1の熱源及び前記第2の熱源を制御する温度制御装置と
を有する基板製造装置。 - 前記制御装置は、前記リザーバタンク内の薄膜材料の温度と、前記供給系内を流れる薄膜材料の温度とが等しくなるように、前記第1の熱源及び前記第2の熱源を制御する請求項1に記載の基板製造装置。
- さらに、
前記ノズル孔から吐出されなかった薄膜材料を、前記ノズルユニットから前記リザーバタンクに回収する回収系を有し、
前記第2の熱源は、前記回収系の少なくとも1箇所を加熱し、
前記第2の温度センサは、前記回収系の少なくとも1箇所の温度を測定し、
前記温度制御装置は、前記回収系を流れる薄膜材料の温度が、前記温度の目標範囲内に収まるように前記第2の熱源を制御する請求項1または2に記載の基板製造装置。 - 前記ノズルユニットは複数のノズルヘッドを含み、前記ノズルヘッドの各々は、複数のノズル孔と、前記複数のノズル孔を連結する共通輸送路とを含み、
前記供給系は、
供給用流入口に流入した薄膜材料を分岐させて、複数の供給用流出口から薄膜材料を送出するマニホールドと、
前記マニホールドの前記供給用流出口から前記複数のノズルヘッドの前記共通輸送路まで薄膜材料を輸送する供給輸送路と
を含み、
前記第2の温度センサの1つは、前記マニホールドの温度を測定し、
前記第2の熱源の1つは、前記マニホールドを加熱し、
前記温度制御装置は、前記マニホールド内を流れる薄膜材料が前記温度の目標範囲内に収まるように、前記第2の熱源を制御する請求項1乃至3のいずれか1項に記載の基板製造装置。 - 前記供給輸送路は、内部を流れる薄膜材料を外気から断熱する断熱構造を有する請求項4に記載の基板製造装置。
- さらに、前記第1の熱源及び前記第2の熱源を、前記塗布ステージが配置された空間から隔離する隔離部材を有する請求項1乃至5のいずれか1項に記載の基板製造装置。
- さらに、
前記塗布ステージと前記ノズルユニットとの一方を他方に対して移動させることにより、前記ノズル孔から吐出された薄膜材料の液滴の着弾地点を、前記塗布ステージに保持された基板の表面内で移動させる移動機構と、
前記ノズルユニット及び前記移動機構を制御する吐出制御装置と
を有し、
前記吐出制御装置は、
前記基板に形成すべき薄膜のパターンを定義したパターン定義データ、前記第2の熱源による加熱によって前記ノズルユニットの前記ノズル孔のピッチが定格ピッチから変動した後の実ピッチを記憶しており、前記パターン定義データに基づいて、前記ノズル孔の配列方向に、前記実ピッチに基づいて配列するピクセルにより構成されるラスタフォーマットの吐出制御用画像データを生成し、前記吐出制御用画像データに基づいて、前記ノズルユニット及び前記移動機構を制御する請求項1乃至6のいずれか1項に記載の基板製造装置。 - さらに、オペレータが前記吐出制御装置に指令を与えるための入力装置を有し、
前記吐出制御装置は、前記入力装置から入力された温度情報に基づいて、前記ノズル孔の定格ピッチが変動した後の前記実ピッチを算出する請求項7に記載の基板製造装置。 - さらに、基板の表面に形成された複数のアライメントマークを撮像する撮像装置を有し、
前記吐出制御装置は、前記撮像装置の撮像結果に基づいて、前記基板の面内方向の伸縮量を算出し、算出された伸縮量に応じて、前記吐出制御用画像データを生成する請求項7または8に記載の基板製造装置。 - さらに、
前記基板を保持して、前記基板の表面に垂直な軸を回転中心として回転するアライメントステージと、
前記基板の回転方向の姿勢を維持した状態で、前記アライメントステージから前記塗布ステージまで、前記基板を搬送する搬送装置と
を有し、
前記吐出制御装置は、前記撮像装置の撮像結果に基づいて、前記アライメントステージを回転させることにより、前記基板の回転方向の位置合わせを行い、前記搬送装置を制御して、回転方向の位置合わせが完了した前記基板を、前記アライメントステージから前記塗布ステージまで搬送する請求項9に記載の基板製造装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013525646A JP5653523B2 (ja) | 2011-07-27 | 2012-07-06 | 基板製造装置 |
KR1020147000799A KR101535221B1 (ko) | 2011-07-27 | 2012-07-06 | 기판제조장치 |
CN201280035355.3A CN103718660B (zh) | 2011-07-27 | 2012-07-06 | 基板制造装置 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011-164872 | 2011-07-27 | ||
JP2011164872 | 2011-07-27 | ||
JP2011165856 | 2011-07-28 | ||
JP2011-165856 | 2011-07-28 | ||
JP2011-169831 | 2011-08-03 | ||
JP2011169831 | 2011-08-03 | ||
JP2012051971 | 2012-03-08 | ||
JP2012-051971 | 2012-03-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2013015093A1 true WO2013015093A1 (ja) | 2013-01-31 |
Family
ID=47600947
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2012/067273 WO2013015093A1 (ja) | 2011-07-27 | 2012-07-06 | 基板製造装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5653523B2 (ja) |
KR (1) | KR101535221B1 (ja) |
CN (1) | CN103718660B (ja) |
TW (1) | TWI520789B (ja) |
WO (1) | WO2013015093A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014151261A (ja) * | 2013-02-07 | 2014-08-25 | Sumitomo Heavy Ind Ltd | 基板製造装置の調整方法、基板製造方法、及び基板製造装置 |
JP2015100747A (ja) * | 2013-11-26 | 2015-06-04 | 住友重機械工業株式会社 | 薄膜形成方法及び薄膜形成装置 |
CN105413967A (zh) * | 2015-12-25 | 2016-03-23 | 齐齐哈尔大学 | 一种智能化快速平板刮膜机 |
KR20160127640A (ko) | 2015-04-27 | 2016-11-04 | 스미도모쥬기가이고교 가부시키가이샤 | 막형성장치 |
KR20170006255A (ko) | 2015-07-07 | 2017-01-17 | 스미도모쥬기가이고교 가부시키가이샤 | 잉크토출장치 및 잉크토출방법 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI835210B (zh) * | 2014-09-02 | 2024-03-11 | 美商凱特伊夫公司 | 用於測量參數的系統和方法 |
CN105750158B (zh) * | 2016-05-06 | 2018-09-28 | 深圳市鑫三力自动化设备有限公司 | 精密点胶系统 |
CN109379850B (zh) * | 2018-10-26 | 2020-07-10 | 江西旭昇电子有限公司 | 印制线路板阻焊图形加工装置及方法 |
CN110439227B (zh) * | 2019-08-16 | 2020-06-02 | 江西省洪观建筑有限公司 | 一种自动刷格子花纹墙面装置 |
CN111565515B (zh) * | 2020-06-09 | 2021-05-28 | 江苏胜帆电子科技有限公司 | 一种lcp材料高频板的制造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11179892A (ja) * | 1997-12-24 | 1999-07-06 | Canon Inc | 記録装置 |
JP2003220715A (ja) * | 2002-01-31 | 2003-08-05 | Konica Corp | インクジェットプリンタ |
JP2004344704A (ja) * | 2003-05-20 | 2004-12-09 | Seiko Epson Corp | 液滴吐出方法及び装置、デバイス及びその製造方法、電気光学装置並びに電子機器 |
JP2005131829A (ja) * | 2003-10-28 | 2005-05-26 | Sony Corp | 液体吐出性能維持方法及び液体吐出装置 |
JP2006043682A (ja) * | 2003-12-17 | 2006-02-16 | Dainippon Printing Co Ltd | パターン形成装置、ヘッドユニット、位置決め治具 |
JP2010228099A (ja) * | 2009-03-25 | 2010-10-14 | Fujifilm Corp | 液体吐出装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100405530C (zh) * | 1996-05-15 | 2008-07-23 | 精工爱普生株式会社 | 薄膜器件的制造方法 |
-
2012
- 2012-07-06 KR KR1020147000799A patent/KR101535221B1/ko active IP Right Grant
- 2012-07-06 JP JP2013525646A patent/JP5653523B2/ja not_active Expired - Fee Related
- 2012-07-06 CN CN201280035355.3A patent/CN103718660B/zh not_active Expired - Fee Related
- 2012-07-06 WO PCT/JP2012/067273 patent/WO2013015093A1/ja active Application Filing
- 2012-07-23 TW TW101126469A patent/TWI520789B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11179892A (ja) * | 1997-12-24 | 1999-07-06 | Canon Inc | 記録装置 |
JP2003220715A (ja) * | 2002-01-31 | 2003-08-05 | Konica Corp | インクジェットプリンタ |
JP2004344704A (ja) * | 2003-05-20 | 2004-12-09 | Seiko Epson Corp | 液滴吐出方法及び装置、デバイス及びその製造方法、電気光学装置並びに電子機器 |
JP2005131829A (ja) * | 2003-10-28 | 2005-05-26 | Sony Corp | 液体吐出性能維持方法及び液体吐出装置 |
JP2006043682A (ja) * | 2003-12-17 | 2006-02-16 | Dainippon Printing Co Ltd | パターン形成装置、ヘッドユニット、位置決め治具 |
JP2010228099A (ja) * | 2009-03-25 | 2010-10-14 | Fujifilm Corp | 液体吐出装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014151261A (ja) * | 2013-02-07 | 2014-08-25 | Sumitomo Heavy Ind Ltd | 基板製造装置の調整方法、基板製造方法、及び基板製造装置 |
JP2015100747A (ja) * | 2013-11-26 | 2015-06-04 | 住友重機械工業株式会社 | 薄膜形成方法及び薄膜形成装置 |
KR20160127640A (ko) | 2015-04-27 | 2016-11-04 | 스미도모쥬기가이고교 가부시키가이샤 | 막형성장치 |
JP2016203118A (ja) * | 2015-04-27 | 2016-12-08 | 住友重機械工業株式会社 | 膜形成装置 |
KR20170006255A (ko) | 2015-07-07 | 2017-01-17 | 스미도모쥬기가이고교 가부시키가이샤 | 잉크토출장치 및 잉크토출방법 |
CN105413967A (zh) * | 2015-12-25 | 2016-03-23 | 齐齐哈尔大学 | 一种智能化快速平板刮膜机 |
Also Published As
Publication number | Publication date |
---|---|
CN103718660A (zh) | 2014-04-09 |
JP5653523B2 (ja) | 2015-01-14 |
KR101535221B1 (ko) | 2015-07-08 |
TW201309396A (zh) | 2013-03-01 |
TWI520789B (zh) | 2016-02-11 |
JPWO2013015093A1 (ja) | 2015-02-23 |
CN103718660B (zh) | 2016-10-05 |
KR20140024952A (ko) | 2014-03-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5653523B2 (ja) | 基板製造装置 | |
JP2022184836A (ja) | 印刷および製造システムにおける精密な位置合わせ、較正および測定 | |
JP5714110B2 (ja) | 基板製造装置及び基板製造方法 | |
TWI511794B (zh) | A film pattern forming apparatus, a film pattern forming method, and a device adjusting method | |
WO2007123148A1 (ja) | 欠陥修復装置、欠陥修復方法、プログラム及びコンピュータ読み取り可能な記録媒体 | |
CN108701631B (zh) | 用于处理基体的喷墨打印系统和方法 | |
TW201330735A (zh) | 於基板上沉積材料的方法 | |
JP4168728B2 (ja) | 液滴吐出装置のドット位置補正方法、液滴吐出方法および電気光学装置の製造方法 | |
JP4250184B2 (ja) | 基板処理装置 | |
JP2013030571A (ja) | 液滴吐出装置及び液滴吐出方法 | |
JP2006130383A (ja) | ドットずれ検出方法およびドットずれ検出装置 | |
JP2008046628A (ja) | アライメントマスクおよびドット位置認識方法 | |
JP4530224B2 (ja) | 塗布装置および塗布方法 | |
JP2013038177A (ja) | 液滴吐出装置及び検査方法 | |
JP2013143462A (ja) | 薄膜形成装置及び薄膜形成方法 | |
JP2014018710A (ja) | 基板へのインク塗布方法 | |
JP2007144375A (ja) | 塗布装置および塗布方法 | |
TWI617018B (zh) | 顯示面板製造裝置 | |
KR102661443B1 (ko) | 기판 처리 장치, 잉크젯 장치 및 메인터넌스 방법 | |
JP2007319858A (ja) | 欠陥修復装置、欠陥修復方法、プログラム及びコンピュータ読み取り可能な記録媒体 | |
JP2016159523A (ja) | 液体吐出ヘッドの製造方法および液体吐出ヘッドの製造装置 | |
JP2019181722A (ja) | 液体吐出ヘッドの製造方法 | |
JP5538046B2 (ja) | 局所加熱装置および局所加熱方法 | |
JP2024037137A (ja) | インクジェットヘッドユニットおよびそれを含む基板処理装置 | |
JP2013120108A (ja) | 薄膜形成装置及び薄膜形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 12817272 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2013525646 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20147000799 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 12817272 Country of ref document: EP Kind code of ref document: A1 |