WO2013000117A1 - 铈掺杂钨酸钡镁发光薄膜及其制备方法和应用 - Google Patents
铈掺杂钨酸钡镁发光薄膜及其制备方法和应用 Download PDFInfo
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- WO2013000117A1 WO2013000117A1 PCT/CN2011/076467 CN2011076467W WO2013000117A1 WO 2013000117 A1 WO2013000117 A1 WO 2013000117A1 CN 2011076467 W CN2011076467 W CN 2011076467W WO 2013000117 A1 WO2013000117 A1 WO 2013000117A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/3018—AIIBVI compounds
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7715—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing cerium
- C09K11/7716—Chalcogenides
- C09K11/7718—Chalcogenides with alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7767—Chalcogenides
- C09K11/7768—Chalcogenides with alkaline earth metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
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- Inorganic Chemistry (AREA)
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- Chemical Kinetics & Catalysis (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Luminescent Compositions (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- 一种铈掺杂钨酸钡镁发光薄膜,具有如下分子式:MgxBa1-xW2O8: YCe3+,其中,x为0.13~0.96,Y为0.0002~0.0124。
- 如权利要求1所述的铈掺杂钨酸钡镁发光薄膜,其特征在于,所述x为0.43,Y为0.0023。
- 一种铈掺杂钨酸钡镁发光薄膜制备方法,包括如下步骤:将氧化镁、氧化钡、三氧化钨及三氧化二铈混合,烧结形成溅射靶材,其中,所述氧化镁的质量百分含量为0.1%~15%,所述氧化钡的质量百分含量为0.1%~40%、所述三氧化二铈的质量百分含量为0.01%~0.8%,余量为三氧化钨;将所述溅射靶材进行磁控溅射,形成铈掺杂钨酸钡镁发光薄膜前体;将所述铈掺杂钨酸钡镁发光薄膜前体进行退火处理,得到铈掺杂钨酸钡镁发光薄膜。
- 如权利要求3所述的铈掺杂钨酸钡镁发光薄膜制备方法,其特征在于,所述氧化镁的质量百分含量为0.2%~10%,所述氧化钡的质量百分含量为0.2%~30%、所述三氧化二铈的质量百分含量为0.02%~0.6%,余量为三氧化钨。
- 如权利要求3所述的铈掺杂钨酸钡镁发光薄膜制备方法,其特征在于,所述氧化镁的质量百分含量为6 %,所述氧化钡的质量百分含量为30%、所述三氧化二铈的质量百分含量为0.15%,余量为三氧化钨。
- 如权利要求3所述的铈掺杂钨酸钡镁发光薄膜制备方法,其特征在于,所述烧结步骤中温度为900~1300℃。
- 如权利要求3所述的铈掺杂钨酸钡镁发光薄膜制备方法,其特征在于,所述溅射步骤条件为:衬底和靶材距离为50~100mm、衬底温度为250℃~750℃、氢气和惰性气体混合气体为工作气体,气体流量15~30sccm、压强0.2~4.5Pa。
- 如权利要求7所述的铈掺杂钨酸钡镁发光薄膜制备方法,其特征在于,所述混合气体中氢气的体积百分含量为1%-15%。
- 如权利要求3所述的铈掺杂钨酸钡镁发光薄膜制备方法,其特征在于,所述退火的温度为500℃~800℃,时间为1-3小时。
- 如权利要求1-2任一项所述的铈掺杂钨酸钡镁发光薄膜在电致发光器件中的应用。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201180070930.9A CN103534332B (zh) | 2011-06-28 | 2011-06-28 | 铈掺杂钨酸钡镁发光薄膜及其制备方法和应用 |
EP11868703.7A EP2727975B1 (en) | 2011-06-28 | 2011-06-28 | Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof |
US14/130,228 US9270084B2 (en) | 2011-06-28 | 2011-06-28 | Cerium doped magnesium barium tungstate luminescent thin film, manufacturing method and application thereof |
JP2014517373A JP5778863B2 (ja) | 2011-06-28 | 2011-06-28 | セリウムをドープしたタングステン酸バリウム・マグネシウム発光薄膜及びその製造方法、並びに電界発光デバイス |
PCT/CN2011/076467 WO2013000117A1 (zh) | 2011-06-28 | 2011-06-28 | 铈掺杂钨酸钡镁发光薄膜及其制备方法和应用 |
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PCT/CN2011/076467 WO2013000117A1 (zh) | 2011-06-28 | 2011-06-28 | 铈掺杂钨酸钡镁发光薄膜及其制备方法和应用 |
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WO2013000117A1 true WO2013000117A1 (zh) | 2013-01-03 |
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PCT/CN2011/076467 WO2013000117A1 (zh) | 2011-06-28 | 2011-06-28 | 铈掺杂钨酸钡镁发光薄膜及其制备方法和应用 |
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US (1) | US9270084B2 (zh) |
EP (1) | EP2727975B1 (zh) |
JP (1) | JP5778863B2 (zh) |
CN (1) | CN103534332B (zh) |
WO (1) | WO2013000117A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104140811A (zh) * | 2013-05-06 | 2014-11-12 | 海洋王照明科技股份有限公司 | 铕掺杂碱土硫代镓酸盐发光材料、制备方法及其应用 |
CN105199730A (zh) * | 2014-05-27 | 2015-12-30 | 五邑大学 | 一种制备稀土掺杂氧化钨纳米结构薄膜的方法 |
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- 2011-06-28 JP JP2014517373A patent/JP5778863B2/ja active Active
- 2011-06-28 US US14/130,228 patent/US9270084B2/en not_active Expired - Fee Related
- 2011-06-28 CN CN201180070930.9A patent/CN103534332B/zh active Active
- 2011-06-28 WO PCT/CN2011/076467 patent/WO2013000117A1/zh active Application Filing
- 2011-06-28 EP EP11868703.7A patent/EP2727975B1/en active Active
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104140811A (zh) * | 2013-05-06 | 2014-11-12 | 海洋王照明科技股份有限公司 | 铕掺杂碱土硫代镓酸盐发光材料、制备方法及其应用 |
CN105199730A (zh) * | 2014-05-27 | 2015-12-30 | 五邑大学 | 一种制备稀土掺杂氧化钨纳米结构薄膜的方法 |
CN105199730B (zh) * | 2014-05-27 | 2018-03-23 | 五邑大学 | 一种制备稀土掺杂氧化钨纳米结构薄膜的方法 |
Also Published As
Publication number | Publication date |
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EP2727975A4 (en) | 2014-12-31 |
US20140145114A1 (en) | 2014-05-29 |
JP5778863B2 (ja) | 2015-09-16 |
EP2727975B1 (en) | 2016-03-09 |
CN103534332B (zh) | 2014-12-31 |
US9270084B2 (en) | 2016-02-23 |
CN103534332A (zh) | 2014-01-22 |
EP2727975A1 (en) | 2014-05-07 |
JP2014528004A (ja) | 2014-10-23 |
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