WO2012141293A3 - 積層体とその製造方法および、この積層体を用いたデバイス構造体の作成方法 - Google Patents

積層体とその製造方法および、この積層体を用いたデバイス構造体の作成方法 Download PDF

Info

Publication number
WO2012141293A3
WO2012141293A3 PCT/JP2012/060141 JP2012060141W WO2012141293A3 WO 2012141293 A3 WO2012141293 A3 WO 2012141293A3 JP 2012060141 W JP2012060141 W JP 2012060141W WO 2012141293 A3 WO2012141293 A3 WO 2012141293A3
Authority
WO
WIPO (PCT)
Prior art keywords
laminate
inorganic layer
layer
resin
coupling agent
Prior art date
Application number
PCT/JP2012/060141
Other languages
English (en)
French (fr)
Other versions
WO2012141293A2 (ja
Inventor
政宏 玉田
俊之 土屋
奥山　哲雄
量之 應矢
郷司 前田
Original Assignee
東洋紡株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東洋紡株式会社 filed Critical 東洋紡株式会社
Priority to CN201280018588.2A priority Critical patent/CN103619591B/zh
Priority to KR1020137030111A priority patent/KR101911574B1/ko
Priority to US14/111,374 priority patent/US9604391B2/en
Priority to JP2012520613A priority patent/JP5429375B2/ja
Publication of WO2012141293A2 publication Critical patent/WO2012141293A2/ja
Publication of WO2012141293A3 publication Critical patent/WO2012141293A3/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C33/00—Moulds or cores; Details thereof or accessories therefor
    • B29C33/38—Moulds or cores; Details thereof or accessories therefor characterised by the material or the manufacturing process
    • B29C33/3842—Manufacturing moulds, e.g. shaping the mould surface by machining
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
    • B29C39/02—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor for making articles of definite length, i.e. discrete articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2379/00—Other polymers having nitrogen, with or without oxygen or carbon only, in the main chain
    • B32B2379/08—Polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Laminated Bodies (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

本発明は、耐熱性に優れた、フィルムデバイスを提供すること、および、このフィルムデバイス作成用の耐熱性樹脂層と無機層から構成されてなる積層体を提供することを課題とするものである。本発明の無機層と樹脂層から構成されてなる積層体の製造方法は、下記（１）～（３）の工程を含むことを特徴とするものである。（１）無機層の少なくとも片面の表面をカップリング剤処理する工程（２）上記（１）の工程によりカップリング剤処理された無機層の少なくとも片面に、無機層と樹脂層の間の接着剥離強度は異なり表面粗さは略同一である良好接着部分と易剥離部分を形成するパターン化処理を行う工程（３）上記（２）の工程によりパターン化処理を施した無機層のカップリング剤処理面上に樹脂溶液あるいは、樹脂前駆体溶液を塗布して得られた塗布溶液層を乾燥、次いで熱処理し前記樹脂層を形成する工程
PCT/JP2012/060141 2011-04-15 2012-04-13 積層体とその製造方法および、この積層体を用いたデバイス構造体の作成方法 WO2012141293A2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN201280018588.2A CN103619591B (zh) 2011-04-15 2012-04-13 层叠体、其制造方法以及使用该层叠体的器件结构体的制作方法
KR1020137030111A KR101911574B1 (ko) 2011-04-15 2012-04-13 적층체와 그 제조 방법 및 이 적층체를 이용한 디바이스 구조체의 작성 방법
US14/111,374 US9604391B2 (en) 2011-04-15 2012-04-13 Laminate, production method for same, and method of creating device structure using laminate
JP2012520613A JP5429375B2 (ja) 2011-04-15 2012-04-13 積層体とその製造方法および、この積層体を用いたデバイス構造体の作成方法

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2011-091041 2011-04-15
JP2011091041 2011-04-15
JP2011120413 2011-05-30
JP2011-120413 2011-05-30
JP2011-164326 2011-07-27
JP2011164326 2011-07-27
JP2012042961 2012-02-29
JP2012-042961 2012-02-29
JP2012-065306 2012-03-22
JP2012065306 2012-03-22

Publications (2)

Publication Number Publication Date
WO2012141293A2 WO2012141293A2 (ja) 2012-10-18
WO2012141293A3 true WO2012141293A3 (ja) 2012-12-20

Family

ID=47009781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2012/060141 WO2012141293A2 (ja) 2011-04-15 2012-04-13 積層体とその製造方法および、この積層体を用いたデバイス構造体の作成方法

Country Status (6)

Country Link
US (1) US9604391B2 (ja)
JP (1) JP5429375B2 (ja)
KR (1) KR101911574B1 (ja)
CN (1) CN103619591B (ja)
TW (1) TWI530392B (ja)
WO (1) WO2012141293A2 (ja)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5862238B2 (ja) * 2011-05-27 2016-02-16 東洋紡株式会社 積層体とその製造方法及びそれを用いたデバイス構造体の製造方法
JP5862866B2 (ja) * 2011-05-30 2016-02-16 東洋紡株式会社 積層体の作成方法および、この積層体を利用したフィルムデバイスの作成方法
JP2013026546A (ja) * 2011-07-25 2013-02-04 Dainippon Printing Co Ltd 薄膜デバイス用基板、及び薄膜デバイスの製造方法
JP6003883B2 (ja) * 2012-02-01 2016-10-05 東洋紡株式会社 積層体とその製造方法及びそれを用いたデバイス構造体の製造方法
US20140159264A1 (en) * 2012-12-07 2014-06-12 Sumitomo Bakelite Co., Ltd. Solution of aromatic polyamide for producing display element, optical element, or illumination element
KR20140083233A (ko) * 2012-12-26 2014-07-04 코오롱인더스트리 주식회사 폴리아믹산 용액, 이미드화막 및 표시소자
TWI524991B (zh) * 2013-02-04 2016-03-11 Toyo Boseki A laminated body, a method for producing a laminated body, and a method for manufacturing the flexible electronic device
TWI612099B (zh) 2013-02-07 2018-01-21 鐘化股份有限公司 烷氧基矽烷改質聚醯胺酸溶液、使用其之積層體及可撓性裝置、與積層體之製造方法
WO2015041190A1 (ja) * 2013-09-20 2015-03-26 東洋紡株式会社 リジッド複合積層板とその製造方法、積層体および該積層体を用いたデバイスの製造方法
KR102227637B1 (ko) * 2013-11-07 2021-03-16 삼성디스플레이 주식회사 적외선 감지 소자, 적외선 감지 소자를 포함하는 적외선 센서 및 이의 제조 방법
US9893228B2 (en) 2014-03-25 2018-02-13 Kaneka Corporation Method for manufacturing compound semiconductor solar cell
JP6130332B2 (ja) * 2014-06-30 2017-05-17 キヤノン・コンポーネンツ株式会社 金属皮膜付樹脂製品の製造方法
KR102294065B1 (ko) 2014-08-12 2021-08-26 가부시키가이샤 가네카 알콕시실란 변성 폴리아미드산 용액, 그것을 사용한 적층체 및 플렉시블 디바이스, 그리고 적층체의 제조 방법
JP6589277B2 (ja) 2015-01-14 2019-10-16 富士電機株式会社 高耐圧受動素子および高耐圧受動素子の製造方法
KR102573207B1 (ko) * 2015-05-19 2023-08-31 코닝 인코포레이티드 시트와 캐리어의 결합을 위한 물품 및 방법
CN107810168A (zh) 2015-06-26 2018-03-16 康宁股份有限公司 包含板材和载体的方法和制品
KR102423947B1 (ko) * 2016-02-25 2022-07-21 쇼와덴코머티리얼즈가부시끼가이샤 에폭시 수지 성형 재료, 성형물, 성형 경화물, 및 성형 경화물의 제조 방법
CN109153852B (zh) * 2016-05-23 2022-07-05 日产化学株式会社 剥离层形成用组合物和剥离层
TWI782915B (zh) * 2016-05-23 2022-11-11 日商日產化學工業股份有限公司 剝離層形成用組成物及剝離層
JP6750363B2 (ja) * 2016-07-20 2020-09-02 日立化成株式会社 積層体、金属張積層体及びプリント配線板
BR112019002448B1 (pt) 2016-08-17 2021-10-26 Dow Global Technologies Llc Derivado de benzofenona, dispersão de copolímero aquosa, e, composição de revestimento aquosa
JP6458099B2 (ja) * 2016-09-16 2019-01-23 旭化成株式会社 ポリイミド前駆体、樹脂組成物、樹脂フィルム及びその製造方法
JP6905200B2 (ja) * 2017-02-27 2021-07-21 Jsr株式会社 基材表面の選択的修飾方法
WO2018181496A1 (ja) * 2017-03-30 2018-10-04 日産化学株式会社 剥離層形成用組成物及び剥離層
KR101960267B1 (ko) * 2017-05-12 2019-03-21 (주)제이스텍 플렉시블 디스플레이 벤딩을 위한 필름 박리방법
KR20200007802A (ko) * 2017-05-17 2020-01-22 고쿠리츠겐큐가이하츠호징 노우교 · 쇼쿠힝 산교기쥬츠 소고겐큐기코 비트리겔막 건조체의 제조 방법 및 제조 장치
US20190057796A1 (en) * 2017-08-15 2019-02-21 The Charles Stark Draper Laboratory, Inc. Wire with composite shield
CN108328935B (zh) * 2018-04-16 2024-02-27 中国工程物理研究院激光聚变研究中心 交变电场辅助光学元件表面刻蚀处理装置及处理方法
CN108794748B (zh) * 2018-06-06 2021-08-10 华南理工大学 一种低介电常数的聚酰亚胺薄膜及其制备方法
CN109054018B (zh) * 2018-06-06 2021-05-14 华南理工大学 一种聚酰胺酸溶液及其制备方法
CN108794747A (zh) * 2018-06-27 2018-11-13 深圳市华星光电技术有限公司 硅烷偶联剂材料、柔性pi基板的制作方法及柔性pi基板半成品
JP7135554B2 (ja) * 2018-08-03 2022-09-13 Jsr株式会社 下層膜形成用組成物、自己組織化膜の下層膜及びその形成方法並びに自己組織化リソグラフィープロセス
EP3873182A4 (en) * 2018-10-22 2023-01-25 Toyobo Co., Ltd. METHOD OF MAKING DEVICE CONNECTED BODY AND DEVICE CONNECTED BODY
KR20210000805A (ko) 2019-06-25 2021-01-06 삼성디스플레이 주식회사 표시 장치의 제조 방법 및 이에 사용되는 레이저 장치
CN110505767B (zh) * 2019-07-08 2021-03-30 苏州固泰新材股份有限公司 一种软性铜箔基材及其制备方法
CN115551714A (zh) * 2020-05-29 2022-12-30 东洋纺株式会社 包含透明高耐热膜的层叠体
US20230173800A1 (en) * 2020-05-29 2023-06-08 Toyobo Co., Ltd. Multilayer body comprising highly heat-resistant transparent film
KR102616131B1 (ko) * 2020-08-24 2023-12-21 세메스 주식회사 기판 처리 장치, 이온 주입 처리 장치 및 이온 주입 처리 방법
KR20220048517A (ko) * 2020-10-12 2022-04-20 삼성디스플레이 주식회사 표시 장치
CN112645278B (zh) * 2020-12-17 2023-09-15 湖南佳禾芯半导体有限公司 一种用于晶圆芯片探针结构的加工方法
CN113021956B (zh) * 2021-02-02 2022-10-28 山东非金属材料研究所 一种耐压复合材料壳体的成型方法
CN113471256B (zh) * 2021-06-16 2023-04-18 武汉华星光电技术有限公司 显示面板及显示面板的制备方法
CN115849298B (zh) * 2023-01-18 2023-05-09 胜科纳米(苏州)股份有限公司 一种具有梳齿结构芯片的梳齿层去除方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05171458A (ja) * 1991-12-26 1993-07-09 Hitachi Chem Co Ltd 金属表面の処理方法
JP2006245303A (ja) * 2005-03-03 2006-09-14 Nikko Kinzoku Kk 銅箔の表面処理方法
JP2006352156A (ja) * 2006-08-17 2006-12-28 Seiko Epson Corp パターン形成基板
JP2009246212A (ja) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd 導電性基板の製造方法及び導電性基板
WO2010071145A1 (ja) * 2008-12-19 2010-06-24 東洋紡績株式会社 積層体およびその製造方法、積層体回路板
JP2010283262A (ja) * 2009-06-08 2010-12-16 Toyobo Co Ltd 積層体およびその製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3090768B2 (ja) * 1992-03-10 2000-09-25 新日鐵化学株式会社 積層体
GB2265021B (en) * 1992-03-10 1996-02-14 Nippon Steel Chemical Co Photosensitive materials and their use in forming protective layers for printed circuit and process for preparation of printed circuit
JPH0656992A (ja) 1992-08-05 1994-03-01 Unitika Ltd ポリイミドフィルム
US5741585A (en) 1995-04-24 1998-04-21 The Dow Chemical Company Polyamic acid precursors and methods for preparing higher molecular weight polyamic acids and polyimidebenzoxazole
US5670262A (en) 1995-05-09 1997-09-23 The Dow Chemical Company Printing wiring board(s) having polyimidebenzoxazole dielectric layer(s) and the manufacture thereof
JP2002196337A (ja) 2000-09-06 2002-07-12 Seiko Epson Corp 電気光学装置の製造方法及び製造装置、並びに液晶パネルの製造方法及び製造装置
JP4919474B2 (ja) 2006-07-13 2012-04-18 国立大学法人京都大学 光照射による樹脂の接着方法および樹脂物品の製造方法
CN101522318B (zh) * 2006-08-08 2013-11-06 环球产权公司 粘合性提高的电路材料、其制造方法和由其制成的制品
JP5138927B2 (ja) 2006-12-25 2013-02-06 共同印刷株式会社 フレキシブルｔｆｔ基板及びその製造方法とフレキシブルディスプレイ
WO2009126366A2 (en) * 2008-04-10 2009-10-15 World Properties, Inc. Circuit materials with improved bond, method of manufacture thereof, and articles formed therefrom
JP5304490B2 (ja) 2009-07-02 2013-10-02 東洋紡株式会社 積層体およびその製造方法
JP5147794B2 (ja) 2009-08-04 2013-02-20 株式会社半導体エネルギー研究所 表示装置の作製方法及び電子書籍の作製方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05171458A (ja) * 1991-12-26 1993-07-09 Hitachi Chem Co Ltd 金属表面の処理方法
JP2006245303A (ja) * 2005-03-03 2006-09-14 Nikko Kinzoku Kk 銅箔の表面処理方法
JP2006352156A (ja) * 2006-08-17 2006-12-28 Seiko Epson Corp パターン形成基板
JP2009246212A (ja) * 2008-03-31 2009-10-22 Dainippon Printing Co Ltd 導電性基板の製造方法及び導電性基板
WO2010071145A1 (ja) * 2008-12-19 2010-06-24 東洋紡績株式会社 積層体およびその製造方法、積層体回路板
JP2010283262A (ja) * 2009-06-08 2010-12-16 Toyobo Co Ltd 積層体およびその製造方法

Also Published As

Publication number Publication date
WO2012141293A2 (ja) 2012-10-18
CN103619591A (zh) 2014-03-05
TW201307061A (zh) 2013-02-16
KR20140027265A (ko) 2014-03-06
KR101911574B1 (ko) 2018-10-24
US9604391B2 (en) 2017-03-28
CN103619591B (zh) 2016-02-24
TWI530392B (zh) 2016-04-21
US20140042662A1 (en) 2014-02-13
JPWO2012141293A1 (ja) 2014-07-28
JP5429375B2 (ja) 2014-02-26

Similar Documents

Publication Publication Date Title
WO2012141293A3 (ja) 積層体とその製造方法および、この積層体を用いたデバイス構造体の作成方法
WO2015034768A8 (en) Methods for manufacturing an additively manufactured fuel contacting component to facilitate reducing coke formation
WO2016064460A3 (en) Method of making a composite article
WO2012129162A3 (en) Methods of making patterned structures of materials, patterned structures of materials, and methods of using same
PL2161316T3 (pl) Kompozycja powłoki przeciwporostowej, sposób wytwarzania tej kompozycji, cienka powłoka przeciwporostowa utworzona przez tę kompozycję, element powlekany zawierający na powierzchni tę cienką powłokę oraz sposób obróbki przeciwporostowej dzięki wytworzeniu cienkiej powłoki
PL2128208T3 (pl) Impregnacyjna kompozycja powłokowa, sposób wytwarzania kompozycji, impregnacyjna powłoka powlekająca utworzona z zastosowaniem kompozycji, powleczony powłoką powlekającą przedmiot na jego powierzchni i sposób impregnacyjnego działania dla wytworzenia powłoki powlekającej
MX351244B (es) Método para formar una película de recubrimiento de capas múltiples.
WO2011146278A3 (en) Textured coating on a component surface
WO2012125377A3 (en) Treatment of a self-assembled monolayer on a dielectric layer for improved epoxy adhesion
WO2011011140A3 (en) Method and materials for double patterning
WO2014021405A3 (ja) 金属光沢を有する膜及びこれが形成されてなる物品並びに金属光沢を有する膜の製造方法
WO2012040591A3 (en) Laminate structure and method for making
EA200802405A1 (ru) Способ получения поглощающего покрытия на основе золь-гель-технологии для гелиотермических систем
WO2012015740A3 (en) Resist fortification for magnetic media patterning
WO2015007789A3 (de) Verfahren zum beschichten von metallischen oberflächen von substraten und nach diesem verfahren beschichteten gegenstände
WO2011092017A8 (de) Verfahren zur herstellung eines beschichteten gegenstands mit texturätzen
WO2013035994A3 (ko) 조리기구 내부표면의 코팅구조 및 코팅방법
SI2238279T1 (en) A process for the production of an enamelled steel substrate
WO2019008282A3 (fr) Procede d'obtention d'un substrat de verre texture revetu d'un revetement de type sol-gel antireflet
WO2011133417A3 (en) Coated graphite article and reactive ion etch manufacturing and refurbishment of graphite article
WO2009088993A3 (en) Co-cure process for autodeposition coating
WO2013012195A3 (ko) 기판의 제조방법 및 이를 이용한 전자소자의 제조방법
WO2013182280A3 (de) Verfahren zur oberflächenbehandlung von gegenständen
WO2009011802A3 (en) Methods for controlling coating gloss
JP2015507560A5 (ja)

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201280018588.2

Country of ref document: CN

ENP Entry into the national phase

Ref document number: 2012520613

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 12771032

Country of ref document: EP

Kind code of ref document: A2

WWE Wipo information: entry into national phase

Ref document number: 14111374

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20137030111

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 12771032

Country of ref document: EP

Kind code of ref document: A2