WO2012111809A1 - Série de buses, et appareil de traitement de substrat pourvu d'une série de buses - Google Patents

Série de buses, et appareil de traitement de substrat pourvu d'une série de buses Download PDF

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Publication number
WO2012111809A1
WO2012111809A1 PCT/JP2012/053828 JP2012053828W WO2012111809A1 WO 2012111809 A1 WO2012111809 A1 WO 2012111809A1 JP 2012053828 W JP2012053828 W JP 2012053828W WO 2012111809 A1 WO2012111809 A1 WO 2012111809A1
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WO
WIPO (PCT)
Prior art keywords
gas
introduction hole
liquid
nozzle
nozzles
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PCT/JP2012/053828
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English (en)
Japanese (ja)
Inventor
松下　亮
昌利 廣川
充司 林田
ガイエッタ、ワリー
Original Assignee
アクアサイエンス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by アクアサイエンス株式会社 filed Critical アクアサイエンス株式会社
Priority to KR1020137021031A priority Critical patent/KR20140042782A/ko
Priority to CN201280008138.5A priority patent/CN103370771A/zh
Publication of WO2012111809A1 publication Critical patent/WO2012111809A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the present invention relates to a nozzle and a processing apparatus used in a process of removing and cleaning substrate contamination and deposits.
  • cleaning is repeated 50 to 100 times for one substrate.
  • the object of the cleaning is an organic substance such as a resist film or a polymer film, particles, or the like that affects device reliability.
  • This cleaning process usually uses a combination of an alkaline cleaning solution and an acid cleaning solution, and other chemicals such as sulfuric acid / hydrogen peroxide and organic solvents, and a large amount of pure water is used in the rinsing step to remove the residue.
  • a plasma ashing apparatus is generally used for removing the resist, but another cleaning apparatus is used for the subsequent cleaning of residues and impurities.
  • the chemicals used for cleaning and thin film removal according to the prior art described above are 1) expensive, 2) special environmental treatment is required due to high environmental load, and 3) safety and health of workers.
  • the size of the equipment is increased to ensure the safety of the equipment, and a special equipment exhaust system is required.
  • a large amount of pure water is required to wash away the chemical solution.
  • One device cannot cover from thin film removal to cleaning. Have the disadvantages.
  • Patent Document 1 a substrate processing method using water vapor and water has been proposed (Patent Document 1). According to this method, since a high physical impact force can be obtained only with water vapor and water, the resist and the polymer film can be peeled off. Therefore, it is possible to reduce the chemical solution in the manufacturing process of the electronic device.
  • An advantage of some aspects of the invention is that it provides a nozzle and a substrate processing apparatus that can efficiently process a substrate having a large area by scanning.
  • the present invention (1) includes a first gas introduction hole, a first liquid introduction hole provided downstream of the first gas introduction hole, a gas supplied from the first gas introduction hole, and the first gas introduction hole.
  • the second gas introduction hole, the gas supplied from the second gas introduction hole is retained, and the gas is supplied to the plurality of acceleration nozzles via the first gas introduction hole. It is the double nozzle of the said invention (1) further equipped with the gas retention part provided with the gas retention space which supplies.
  • the gas retention part further includes a shielding rod for diffusing the gas ejected from the second gas introduction hole in the vicinity of the second gas introduction hole in the gas retention space. It is the double nozzle of the said invention (2).
  • the present invention (4) is the multiple nozzle of the invention (3), wherein the width of the shielding rod is larger than the inner diameter of the gas introduction hole.
  • the present invention (5) is the multiple nozzle according to the invention (3) or (4), wherein the shielding rod has a square-shaped inclined portion facing the direction of the gas introduction hole.
  • the present invention (6) is the double nozzle according to the invention (5), wherein an inclination angle of the angular inclined portion is 30 to 150 °.
  • an object of the present invention (7) to (8) is to provide a multiple nozzle with high uniformity of impact force applied to an object.
  • each of the plurality of acceleration nozzles has a series of outlets arranged in a lateral direction, Adjacent jets from the lateral ends of the outlets of the plurality of acceleration nozzles with respect to the lateral spread width W ([throttle portion lateral width] ⁇ [jet outlet lateral width]) / 2) of the plurality of acceleration nozzles.
  • W [throttle portion lateral width] ⁇ [jet outlet lateral width]
  • the ratio ([P] / [W]) of the distance P between the lateral ends of the outlet is 0.2 to 1.0. is there.
  • the present invention (8) is the multiple nozzle according to the invention (7), wherein the ejection port is provided with a slit that connects adjacent ejection ports and opens in the ejection direction.
  • an object is to provide means for uniformly adjusting the amount of liquid ejected from each nozzle even when multiple nozzles are used.
  • the second liquid introduction hole, the liquid introduced from the second liquid introduction hole is retained, and the liquid is supplied to the plurality of acceleration nozzles via the first liquid introduction hole.
  • the liquid retention part is provided on a side surface of the multiple nozzle,
  • the liquid retention space has a horizontally long rectangular parallelepiped shape;
  • the second liquid introduction hole is provided at an upper portion of one end of the liquid retention space;
  • the present invention (11) includes any one of the multiple nozzles of the inventions (1) to (10), A steam generator for supplying steam to the multiple nozzles; A substrate processing apparatus comprising: a water supply unit that supplies a liquid to the multiple nozzles.
  • the present invention (12) is the substrate processing apparatus according to the invention (11), further comprising a gas supply unit for supplying an inert gas or clean air to the double nozzle.
  • the double nozzle according to the present invention there is an effect that a substrate having a large area can be processed efficiently by one scan.
  • the gas introduced from the second gas introduction hole is temporarily retained and then supplied to each nozzle.
  • the amount of ejected mixed phase fluid becomes uniform.
  • the shielding rod in the gas retention space the flow of the gas introduced from the second gas introduction hole is shielded, and the effect of improving the uniformity by providing the gas retention portion becomes remarkable.
  • the impact force distribution under each nozzle and between nozzle nozzles shows high uniformity.
  • the uniformity of the impact force distribution is further enhanced by providing slits between the nozzle outlets.
  • the amount of water supplied to each nozzle becomes constant, so that the mixed phase fluid to be ejected becomes uniform.
  • FIG. 1 is a front view of a multiple nozzle according to the present invention.
  • FIG. 2 is a side view of a multiple nozzle according to the present invention.
  • FIG. 3 is a bottom view of the multiple nozzle according to the present invention.
  • FIG. 4 is a plan view of a multiple nozzle according to the present invention.
  • FIG. 5 is an explanatory diagram of the spreading width W ([throttle portion lateral width] ⁇ [jet outlet lateral width]) / 2) and the distance P.
  • FIG. 6 is a photograph showing the structure of the slit of the double nozzle according to the present invention.
  • FIG. 7 is a diagram showing the structure of the shielding rod.
  • FIG. 8 is a schematic configuration diagram of a substrate processing apparatus according to the present invention.
  • FIG. 8 is a schematic configuration diagram of a substrate processing apparatus according to the present invention.
  • FIG. 9 is a photograph showing a state in which a multiphase fluid is ejected from the multiple nozzle according to the present invention.
  • FIG. 10 is a graph showing the results of measuring the impact force of the fluid ejected from the multiple nozzle according to the present invention.
  • FIG. 11 is a graph showing the results of measuring the impact force of the fluid ejected from the multiple nozzle according to the present invention.
  • FIG. 12 is a graph showing the results of measuring the impact force of the fluid ejected from the multiple nozzle according to the present invention while changing the position in the lateral direction.
  • FIG. 1 to 4 show the form of a double nozzle according to the present invention.
  • 1 is a front view of a multiple nozzle according to the present invention
  • FIG. 2 is a side view of the multiple nozzle according to the present invention
  • FIG. 3 is a bottom view of the multiple nozzle according to the present invention.
  • These are top views of the double nozzle concerning this invention.
  • the part expressed with a broken line is a perspective line which shows the structure inside a double nozzle.
  • the multiple nozzle 1 includes a plurality of acceleration nozzles 100 and a multiple acceleration nozzle portion 10 in which the acceleration nozzles are arranged in parallel.
  • the plurality of acceleration nozzles 100 are arranged so that the ejection directions are parallel to each other.
  • an example (100a to h) in which eight acceleration nozzles 100 are provided is shown, but the number of nozzles is not particularly limited.
  • the acceleration nozzle 100 is provided upstream of the nozzle and has a first gas introduction hole 101 having a maximum cross-sectional area in the nozzle, and is downstream of the first gas introduction hole, and is provided on a side surface of the acceleration channel.
  • a first liquid introduction hole 103, an acceleration channel 105 for accelerating the gas supplied from the first gas introduction hole and the liquid supplied from the first liquid introduction hole, and an accelerated mixed phase fluid And an ejection port 107 to be ejected.
  • the accelerating flow path 105 is formed continuously with the introduction path 1051 that decreases in cross-sectional area toward the downstream side, the throttle section 1053 having the smallest cross-sectional area in the flow path formed at the end of the introduction section, and the throttle section.
  • the acceleration path 1055 has a cross-sectional area that increases toward the downstream side. It is preferable that the cross-sectional area of the first gas introduction hole 101 is larger than the cross-sectional area of the first liquid introduction hole 103. By adopting such a configuration, it becomes easy to inject a mixed phase fluid composed of a continuous phase gas and dispersed phase droplets.
  • the cross-sectional shape of the ejection port 107 may be circular, elliptical, or slit.
  • the ejection ports 107a to 107h of the accelerating nozzle 100 are arranged in series in the lateral direction (FIG. 1).
  • the ratio ([P] / [W]) of the distance P between the horizontal ends of the adjacent jet outlets from the part is preferably 0.01 to 2.0, and is preferably 0.2 to 1.0. More preferably. By setting the ratio in this range, there is no gap in the multiphase fluid ejected from the multiple nozzles, and the impact force applied to the object becomes uniform.
  • the horizontal width of a jet nozzle means the horizontal width in the upper end part of a slit (FIG.5 (c)).
  • the jet nozzle 107 of the double nozzle portion is provided with a slit 109 that connects adjacent jet ports and opens in the jet direction.
  • the circled part in FIG. 6 is the slit 109.
  • the slit 109 is provided between the ejection ports 107 (slits 109a to 109g).
  • the slit width is preferably in the range of 0.3 to 1.0 in terms of the ratio to the vertical width of the jet port ([slit width] / [longitudinal width of the jet port]).
  • the depth of the slit is preferably 1 to 10 mm from the jet nozzle.
  • the multiple nozzle 1 includes a gas retention part 20 for uniformly introducing a gas into the first gas introduction part 101.
  • the gas retention part 20 retains the gas supplied from the second gas introduction hole 201 and the second gas introduction hole, and provides gas to the plurality of acceleration nozzles via the first gas introduction hole.
  • a gas retention space 203 is provided.
  • the gas retention space 203 has a cross-sectional area wider than the cross-sectional area of the second gas introduction hole 201 in the vicinity of the entrance, and has a shape that becomes narrower as it goes downstream.
  • the residence space outlet 2031 surrounds the plurality of first gas introduction holes 101 of the multiple nozzle unit 10. As the introduced gas stays in the stay space 203, the gas is supplied to the first gas introduction hole 101 of each acceleration nozzle with a uniform pressure. Therefore, the amount of gas ejected from each acceleration nozzle is uniform.
  • the gas retention part 20 further includes a shielding rod 205 that diffuses the gas ejected from the second gas introduction hole 201 in the vicinity of the second gas introduction hole 201 in the retention space 203.
  • 7A and 7B are views showing the structure of the shielding rod 205, FIG. 7A is a side view, FIG. 7B is a front view, and FIG. 7C is a cross-sectional view along aa.
  • the shielding rod 205 is installed on the wall surface that forms the stay space 203. By arranging the shielding rod 205, the gas flow ejected from the second gas introduction hole 201 is shielded and exists in the downstream portion of the second gas introduction hole 201 without staying in the gas retention space 203. This prevents gas from being biased toward the multiple nozzles.
  • the shielding rod 205 preferably has a square inclined portion 2051 facing the direction of the second gas introduction hole.
  • the inclination angle ⁇ of the rectangular inclined portion 2051 is not particularly limited, but is preferably 30 ° to 150 °, more preferably 60 ° to 120 °, and particularly preferably 90 °. By setting the inclination angle in such a range, an appropriate shielding effect is obtained, and the uniformity of the gas supply amount to each acceleration nozzle is enhanced.
  • a groove 2053 may be provided on the side surface of the shielding bar 205 so that the position of the square inclined portion can be rotated.
  • the width d a of shield rod 205 it is preferable larger than the inner diameter d b of the second gas introducing hole 201.
  • the width d a of shield rod 205 refers to the maximum width of the component perpendicular to the direction of the second gas introducing hole 201.
  • the multiple nozzle 1 includes a liquid retention part 30 for uniformly introducing water into the first liquid introduction part 103.
  • the liquid retention part 30 retains the liquid introduced from the second liquid introduction hole 301 and the second liquid introduction hole, and liquid is supplied to the plurality of acceleration nozzles via the first liquid introduction hole.
  • a liquid retention space 302 is provided.
  • the liquid retention part 30 is provided on the side surface of the double nozzle.
  • the liquid retention space 302 has a horizontally long rectangular parallelepiped shape.
  • a second liquid introduction hole 301 is provided on the upper surface of one end in the lateral direction of the liquid retention space 302, and the liquid supply hole 303 is a first liquid introduction portion 103 at the other end in the lateral direction of the liquid retention space. It is provided in the upper part adjacent to.
  • FIG. 8 is an overall view of a substrate processing apparatus 500 according to the present invention.
  • the apparatus 500 includes a water vapor supply unit (A), a gas supply unit (B), a water supply unit (C), a two-fluid adjustment unit (D), a mixed phase fluid injection unit (E), a substrate holding / rotation / up-and-down mechanism unit. (F).
  • A water vapor supply unit
  • B gas supply unit
  • C water supply unit
  • D two-fluid adjustment unit
  • E mixed phase fluid injection unit
  • F substrate holding / rotation / up-and-down mechanism unit.
  • the water vapor supply unit (A) generates water vapor by heating to a water supply pipe 511 for supplying pure water and a predetermined temperature D1 (° C.) or higher, and controls the amount of water vapor generated.
  • a steam generator 512 that pressurizes the steam to a predetermined value C1 (MPa), an openable / closable steam opening / closing valve 513 that controls supply and stop of steam, and a pressure of steam supplied downstream from the steam generator 512.
  • the flow rate and pressure of water vapor can be controlled only by the water vapor pressure adjustment valve 515.
  • the gas supply unit (B) includes a gas supply pipe 521 for supplying an inert gas or clean air, and a gas for adjusting the supply pressure of the inert gas or clean air to a desired value.
  • a gas supply pipe 521 for supplying an inert gas or clean air
  • a gas for adjusting the supply pressure of the inert gas or clean air to a desired value.
  • the pressure adjustment valve 522, the gas opening / closing flow rate adjustment valve 523 for controlling the flow rate to a desired value, controlling the stop and restart of the inert gas or clean air
  • Gas temperature control mechanism additional heat section 524 and a gas flow meter 525 for measuring the pressure of the gas supplied downstream.
  • the source pressure can be kept constant (about 0.4 MPa) by the gas pressure adjustment valve 522, and the output flow rate can be controlled by the open / close flow rate adjustment valve 523.
  • the water supply unit (C) confirms the flow rate of water, a water supply pipe 531 for supplying water, a water temperature control mechanism additional heat unit 532 for giving water thermal energy, and A water flow meter 533 for downstream operation, a downstream water opening / closing valve 534 for controlling the stop and restart of downstream water supply, and an orifice for adjusting the flow rate and for smoothly introducing water into the gas pipe ( A flow rate adjusting valve) 535.
  • a water supply pipe 531 for supplying water
  • a water temperature control mechanism additional heat unit 532 for giving water thermal energy
  • a water flow meter 533 for downstream operation
  • a downstream water opening / closing valve 534 for controlling the stop and restart of downstream water supply
  • an orifice for adjusting the flow rate and for smoothly introducing water into the gas pipe ( A flow rate adjusting valve) 535.
  • the said liquid here water
  • it is suitable that it is not a mixture, such as the conventional nitrogen gas.
  • a gas that dissolves in the liquid here, water
  • a gas that dissolves in the liquid may be supplied to the nozzle in a liquid state in which CO 2 is dissolved.
  • the flow rate of water is confirmed by a water flow meter 533 by adjusting the orifice (flow rate adjusting valve) 535 with a constant pressure (usually 0.4 MPa) applied to a pure water tank (not shown). Can be controlled.
  • the 2 fluid adjustment part (D) has the 2 fluid temperature control mechanism additional heat part 541 for adjusting the temperature of the produced
  • the multi-phase fluid ejecting unit (E) moves in the front-rear and left-right directions (X-axis nozzle scan range or Y-axis nozzle scan range in FIG. 8) for ejecting the multi-phase fluid to the object. It comprises a possible multiple nozzle 1, a flexible pipe 552 for smoothly moving the nozzle, and a pressure gauge 553 for measuring the pressure immediately before the fluid nozzle.
  • the multiple nozzles 1 can efficiently process a substrate by scanning in the X-axis direction.
  • the nozzle shown in FIG. 8 is a schematic configuration diagram of the side surface of the composite nozzle 1.
  • the substrate holding / rotating unit (F) includes a stage 561 on which an object (substrate) can be mounted / held and a rotary motor 562 for rotating the stage 561.
  • the mixed phase fluid generated by mixing the water vapor supplied from the water vapor supply unit and the water supplied from the water supply unit in the double nozzle 1 is injected.
  • an inert gas or clean air By mixing an inert gas or clean air, a high pressure can be obtained while suppressing the injection amount of water vapor.
  • the water vapor supplied from the water vapor supply unit or the gas from the gas supply unit is introduced into the second gas introduction hole 201 of the composite nozzle 1 according to the present invention.
  • the gas introduced from the second gas introduction hole is once blocked by the shielding rod 205 and stays in the air retention space 203, and then uniformly into the first gas introduction hole 101 of each acceleration nozzle 100. Supplied.
  • water is supplied from the water supply unit to the second liquid introduction hole 301 of the multiple nozzle 1.
  • the water to be supplied may be a mixture obtained by adding a chemical solution.
  • the water introduced from the second liquid introduction hole 301 flows to the bottom surface portion of the liquid retention space 302 and then stays in the retention space, and from the liquid supply hole 303 provided in the upper portion of the space.
  • the liquid is uniformly supplied to the first liquid introduction hole 103 of each acceleration nozzle.
  • each acceleration nozzle in the double acceleration nozzle section 10 the gas introduced from the first gas introduction hole 101 and the liquid supplied from the first liquid introduction hole 103 on the side surface of the acceleration flow path are in the acceleration flow. It is accelerated by the road and ejected from the ejection port 107. Since the supply amount of the gas and liquid from each nozzle is uniform, the amount of the multiphase fluid ejected from each nozzle is uniform.
  • the substrate is efficiently scanned by scanning the substrate in the vertical direction (X axis) with respect to the lateral direction (Y axis) in which the jet nozzle 107 is connected while ejecting the multiphase fluid.
  • the whole can be processed.
  • the amount of the mixed phase fluid ejected from each acceleration nozzle is uniform, the substrate surface can be uniformly treated.
  • the impact force can be made uniform by providing the slit 109 at the ejection port 107, the substrate can be processed uniformly by a single scanning process.
  • Example 1 Under the following conditions, a multi-phase nozzle 1 according to the present invention having seven accelerating nozzle portions was used to inject a multiphase fluid and observe the state of the fluid ejected from each nozzle. The results are shown in FIG. Furthermore, unnecessary gold lift-off is performed by injecting a mixed phase fluid (gas: vapor + air, liquid: water) onto the substrate on which the gold thin film is formed on the resist surface on which the electrode wiring pattern is formed. was done.
  • a mixed phase fluid gas: vapor + air, liquid: water
  • Example 2 As a comparative experiment, the same conditions as in Example 1 were used except that a double nozzle having the same structure as Example 1 was used except that no shielding rod and jet slit were provided and the P / W ratio was 7.0. Then, the state of the mixed phase fluid ejected from each nozzle was observed by ejecting the mixed phase fluid. The results are shown in FIG. Furthermore, unnecessary gold lift-off is performed by injecting a mixed phase fluid (gas: vapor + air, liquid: water) onto the substrate on which the gold thin film is formed on the resist surface on which the electrode wiring pattern is formed under the above conditions. Was done.
  • a mixed phase fluid gas: vapor + air, liquid: water
  • the impact force was measured in detail using a double nozzle provided with a 180 ° shielding bar and no jet slit and the double nozzle used in Example 1. Under the above injection conditions, the impact force was measured while changing the lateral position of the nozzle from one end to the other end of the multiple nozzle. The results are shown in FIG.
  • a slit having [slit width] / [longitudinal width of the outlet]: 0.4 and slit depth: 5 mm is provided between the outlets, and the inclination angle of the angled inclined portion of the shielding rod is 90 °.
  • the nozzle and apparatus according to the present invention are electrodes for manufacturing processes for manufacturing semiconductor wafers, liquid crystal displays, hard disks and other recording media, printed circuit boards, solar cell substrates, etc. Used in the forming process.

Abstract

L'invention a pour objectif de proposer des buses et un appareil de traitement de substrat, dans lesquels une large superficie d'un substrat peut être traitée efficacement, par balayage. Pour ce faire, l'invention propose une série de buses (1) comprenant une section de multiples buses (10) pourvue de buses d'accélération (100) comprenant : des premiers trous d'introduction de gaz (101) ; des premiers trous d'introduction de liquide (103) disposés en aval des premiers trous d'introduction de gaz (101) ; des chemins d'écoulement d'accélération (105) permettant d'accélérer le gaz fourni à partir des premiers trous d'introduction de gaz (101) et le liquide fourni à partir des premiers trous d'introduction de liquide (103) ; et des buses d'éjection (107) à travers lesquelles les fluides multiphases accélérés sont éjectés. Dans la section des multiples buses (10), les buses d'accélération (100) sont agencées en parallèle.
PCT/JP2012/053828 2011-02-17 2012-02-17 Série de buses, et appareil de traitement de substrat pourvu d'une série de buses WO2012111809A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020137021031A KR20140042782A (ko) 2011-02-17 2012-02-17 복련 노즐 및 당해 복련 노즐을 구비하는 기판 처리 장치
CN201280008138.5A CN103370771A (zh) 2011-02-17 2012-02-17 复合喷嘴及具备该复合喷嘴的基板处理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011032677A JP2012174741A (ja) 2011-02-17 2011-02-17 複連ノズル及び当該複連ノズルを備える基板処理装置
JP2011-032677 2011-02-17

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WO2012111809A1 true WO2012111809A1 (fr) 2012-08-23

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JP (1) JP2012174741A (fr)
KR (1) KR20140042782A (fr)
CN (1) CN103370771A (fr)
TW (1) TWI579061B (fr)
WO (1) WO2012111809A1 (fr)

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WO2018150669A1 (fr) * 2017-02-14 2018-08-23 株式会社Ｓｃｒｅｅｎホールディングス Dispositif de mesure de force d'impact, dispositif de traitement de substrat, procédé de mesure de force d'impact et procédé de traitement de substrat

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TWI595332B (zh) 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
JP6013557B1 (ja) * 2015-06-02 2016-10-25 株式会社Ｎｓｃ スプレイエッチング装置
KR101835986B1 (ko) * 2016-07-25 2018-03-07 시오 컴퍼니 리미티드 유체 공급관
DE112019002259B4 (de) * 2018-05-01 2022-07-07 Universal Can Corporation Trocknungseinrichtung und Verfahren zur Herstellung eines Dosenkörpers

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WO2009013797A1 (fr) * 2007-07-20 2009-01-29 Aqua Science Corporation Procédé de traitement de pièce de travail et système pour le traitement d'une pièce de travail
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JPH07185434A (ja) * 1993-12-28 1995-07-25 Kao Corp 塗布装置
JP2005021894A (ja) * 1999-10-27 2005-01-27 Tokyo Electron Ltd 液処理装置
JP2003145064A (ja) * 2001-11-12 2003-05-20 Tokyo Electron Ltd ２流体ジェットノズル及び基板洗浄装置
JP2004237282A (ja) * 2003-01-16 2004-08-26 Kyoritsu Gokin Co Ltd 二流体ノズル
JP2007319853A (ja) * 2006-05-02 2007-12-13 Kyoritsu Gokin Co Ltd 二流体ノズルとそれを用いた噴霧方法
WO2009013797A1 (fr) * 2007-07-20 2009-01-29 Aqua Science Corporation Procédé de traitement de pièce de travail et système pour le traitement d'une pièce de travail
JP2009154146A (ja) * 2007-12-06 2009-07-16 Fukuoka Prefecture 微粒化装置および微粒化方法

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JP2012174741A (ja) 2012-09-10
TW201240743A (en) 2012-10-16
TWI579061B (zh) 2017-04-21
CN103370771A (zh) 2013-10-23
KR20140042782A (ko) 2014-04-07

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