WO2012039310A1 - Procédé de fabrication d'élément électroluminescent, appareil filmogène et élément électroluminescent organique. - Google Patents

Procédé de fabrication d'élément électroluminescent, appareil filmogène et élément électroluminescent organique. Download PDF

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Publication number
WO2012039310A1
WO2012039310A1 PCT/JP2011/070732 JP2011070732W WO2012039310A1 WO 2012039310 A1 WO2012039310 A1 WO 2012039310A1 JP 2011070732 W JP2011070732 W JP 2011070732W WO 2012039310 A1 WO2012039310 A1 WO 2012039310A1
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Prior art keywords
protective film
chamber
organic
film
electrode layer
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PCT/JP2011/070732
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English (en)
Japanese (ja)
Inventor
美穂 清水
一也 齋藤
康明 村田
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株式会社アルバック
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Priority to JP2012534998A priority Critical patent/JPWO2012039310A1/ja
Publication of WO2012039310A1 publication Critical patent/WO2012039310A1/fr

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Definitions

  • the present invention relates to an organic EL element manufacturing method, a film forming apparatus used for the manufacturing method, and an organic EL element manufactured by the manufacturing method.
  • OLEDs Organic light-emitting diodes
  • OLEDs have high luminous efficiency and can assemble thin light-emitting devices, and in recent years, application to televisions and lighting devices with a large area has been proposed. Since the organic EL element has a property of deteriorating and shortening its life when moisture enters the organic layer, a sealing technique for shielding from moisture in the atmosphere is required.
  • Patent Document 1 describes a method of forming an inorganic sealing film by a PECVD method and a method of forming an inorganic sealing film by a physical vapor deposition (PVD) method such as a sputtering method or a vacuum evaporation method. ing.
  • PECVD plasma chemical vapor deposition
  • Patent Document 1 discloses a technique for forming a resin film on the surface of an inorganic sealing film formed by a CVD method or a PVD method, but the adhesion is caused by the difference in stress between the inorganic sealing film and the resin film. There was a problem that the water blocking performance could not be improved.
  • the present invention was created in order to solve the disadvantages of the above prior art, and an object thereof is to provide a technique for improving the sealing performance of a protective film of an organic EL element.
  • the present invention provides a protective film on the second electrode layer of the object to be processed in which a first electrode layer, an organic layer, and a second electrode layer are sequentially laminated on a substrate.
  • a method for producing an organic EL element to form a film wherein a first protective film forming step of forming a first protective film made of an inorganic substance containing Si in a chemical structure in close contact with the second electrode layer And a second protective film forming step for forming a second protective film made of Al 2 O 3 in close contact with the first protective film by an ALD method.
  • the present invention is a method for manufacturing an organic EL element, wherein in the first protective film formation step, the first protective film is formed by one of a PECVD method and a sputtering method. It is a manufacturing method of an organic EL element.
  • the present invention relates to a method for manufacturing an organic EL element, wherein the first protective film is a method for manufacturing an organic EL element made of any one inorganic material selected from the group consisting of SiN, SiON, and SiO. is there.
  • the present invention is a method for manufacturing an organic EL element, wherein in the second protective film forming step, the second protective film is formed with a thickness of 10 nm to 100 nm. .
  • the present invention is a method for manufacturing an organic EL element, wherein the first protective film is in close contact with the second electrode layer from the start of film formation of the first protective film. Until the formation of the second protective film is completed, the organic EL element manufacturing method does not expose the object to be processed to the outside air.
  • the present invention is a film forming apparatus used in a method for manufacturing an organic EL element, wherein a first film forming chamber configured to form the first protective film and the second protective film are formed.
  • a second film formation chamber configured to be capable of forming a film, and the second protective film film formation chamber is disposed in the vacuum chamber and the substrate holding the processing object.
  • a holding unit a source gas discharge unit that discharges the source gas into the vacuum chamber, a reaction gas discharge unit that discharges the reaction gas into the vacuum chamber, and a vacuum exhaust unit that evacuates the vacuum chamber;
  • a heating device that heats the object to be processed held by the substrate holding part, and the substrate holding part holds a plurality of the objects to be processed along the vertical direction in a state where the object to be processed is horizontal. It is the film-forming apparatus comprised in this.
  • the present invention is an organic EL device manufactured by a method for manufacturing an organic EL device.
  • the sealing defect portion of the first protective film is filled with the second protective film, and the sealing performance is improved.
  • the sealing performance of the protective film is further improved.
  • the film-forming process of the second protective film by the ALD method it is possible to form a film on a plurality of substrates at the same time, so that productivity is high.
  • the top view of the 1st example of the film-forming apparatus of this invention Internal configuration diagram of second film formation chamber, second transfer chamber, preparation chamber, and magnet mask insertion chamber (A): Plan view of mask plate, object to be processed and magnet plate (b): Cross section taken along line AA (c): Cross section taken along line BB Internal configuration diagram of the first example of the first film formation chamber Internal configuration diagram of the second example of the first film formation chamber (A), (b): Internal side view of another example of substrate holding part (A) to (c): Cross section of the object to be treated Internal configuration diagram of second film formation chamber, second transfer chamber, take-out chamber, and magnet mask discharge chamber The top view of the 2nd example of the film-forming apparatus of this invention Etching chamber internal configuration diagram
  • FIG. 1 is a plan view of an example of the film forming apparatus 10.
  • the film forming apparatus 10 includes a pre-process chamber 11, a reversing chamber 14, a first transfer chamber 12, a carry-in / out chamber 16, a preparation chamber 21, a second transfer chamber 23, and a take-out chamber 25. , And a post-process chamber 27, and these chambers are connected in series in this order. Each chamber is shielded from outside air outside the film forming apparatus 10.
  • a vacuum exhaust apparatus (not shown) is connected to the pre-process chamber 11, the reversing chamber 14, and the first transfer chamber 12, so that the inside can be evacuated.
  • a gas introduction device (not shown) is connected to the preparation chamber 21, the second transfer chamber 23, the take-out chamber 25, and the post-process chamber 27, and a dry inert gas such as N 2 gas or Ar gas is contained therein. The gas can be flowed to atmospheric pressure.
  • a vacuum exhaust device (not shown) and a gas introduction device (not shown) are connected to the carry-in / out chamber 16 so that the inside can be set to atmospheric pressure or a vacuum atmosphere.
  • the film forming apparatus 10 of the present invention includes a plurality of first film forming chambers 13a to 13e and one to a plurality of second film forming chambers 24a and 24b.
  • two second film forming chambers 24a and 24b are provided.
  • the first film forming chambers 13 a to 13 e are connected to the first transfer chamber 12, and the second film forming chambers 24 a and 24 b are connected to the second transfer chamber 23.
  • FIG. 4 is an internal configuration diagram of an example of the first film forming chamber 13a.
  • the first film forming chamber 13 a includes a vacuum chamber 41, a shower head 47, a substrate stage 46, and a source gas source 43.
  • the substrate stage 46 is disposed in the vacuum chamber 41 and is configured to hold the processing object on the surface facing upward.
  • Reference numeral 1 denotes a processing object placed on the substrate stage 46.
  • the shower head 47 has a shower plate 47a provided with a plurality of discharge holes 51, and an electrode frame 47b.
  • the edge of the electrode frame 47b is fixed to the outer periphery of the back surface of the shower plate 47a, and a discharge space 44 surrounded by the shower plate 47a and the electrode frame 47b is formed between the shower plate 47a and the electrode frame 47b. Yes.
  • the shower plate 47a and the electrode frame 47b are electrically connected.
  • the shower head 47 is disposed above the substrate stage 46 with the shower plate 47 a facing the surface facing the substrate stage 46.
  • the source gas source 43 is connected to the shower head 47 and is configured to be able to release the source gas into the discharge space 44.
  • the source gases are mixed with each other in the discharge space 43 and discharged from the discharge hole 51 into the vacuum chamber 41.
  • a high frequency power supply 48 is electrically connected to the electrode frame 47b, and the high frequency power supply 48 is configured to apply a high frequency voltage to the electrode frame 47b.
  • the source gas released into the vacuum chamber 41 is turned into plasma.
  • a mask holding part 49 configured to hold the first mask plate horizontally is disposed.
  • Reference numeral 9 denotes a first mask plate held by the mask holding portion 49.
  • a stage elevating device 45 is disposed below the substrate stage 46, and is configured to be able to move the substrate stage 46 along with the processing object 1 along the vertical direction.
  • the substrate stage 46 is raised, the surface of the processing object 1 on the substrate stage 46 approaches and comes into contact with the back surface of the first mask plate 9 held by the mask holding unit 49, and when the substrate stage 46 is lowered, the processing is performed.
  • the object 1 is separated from the first mask plate 9.
  • a vacuum evacuation device 42 is connected to the vacuum chamber 41 so that the inside can be evacuated.
  • FIG. 2 is an internal configuration diagram of the second film forming chamber 24 a, the second transfer chamber 23, the preparation chamber 21, and the magnet mask loading chamber 22.
  • the second film forming chamber 24a includes a vacuum chamber 81, a substrate holding unit 82, a source gas discharge unit 83, a reaction gas discharge unit 84, a purge gas discharge unit 87, a vacuum exhaust unit 85, and a heating device 86.
  • the substrate holding portion 82 is a casing, and a plurality of substrate holding spaces 95 are provided in the inside along the vertical direction. Here, two adjacent substrate holding spaces 95 are blocked by a partition wall.
  • the thickness of the substrate holding space 95 is formed to be larger than the thickness of a film formation target 1 ′ configured by laminating a magnet plate 32, a processing target 1, and a mask plate 31, which will be described later. Is configured to be held horizontally.
  • the deposition target object 1 ′ When the deposition target object 1 ′ is held in each substrate holding space 95, the deposition target object 1 ′ is disposed so as to overlap along the vertical direction. Therefore, even if the number of film formation objects 1 ′ held on the substrate holding part 82 is increased, the occupied area in the horizontal direction of the apparatus is not increased.
  • a gas introduction pipe 88 is vertically arranged in the vacuum chamber 81.
  • One end of the gas introduction pipe 88 extends through the wall surface of the vacuum chamber 81 in an airtight manner and extends to the outside of the vacuum chamber 81.
  • the source gas discharge part 83, the reaction gas discharge part 84, and the purge gas discharge part 87 are disposed outside the vacuum chamber 81 and are connected to the gas introduction pipe 88, respectively.
  • the source gas discharge unit 83 is configured to be able to release a source gas
  • the reaction gas release unit 84 is configured to be able to release a reaction gas that reacts with the source gas
  • the purge gas release unit 87 is capable of releasing an inert purge gas. It is configured.
  • a plurality of discharge holes 90 are provided along the vertical direction in a portion of the outer peripheral side surface of the gas introduction pipe 88 that can face the substrate holding portion 82.
  • the distance between the centers of the adjacent discharge holes 90 in the vertical direction is the same as the distance between the centers of the adjacent substrate holding spaces 95 in the vertical direction.
  • a substrate holding unit lifting / lowering device 89 is disposed below the substrate holding unit 82, and is configured to be able to move the substrate holding unit 82 along the vertical direction.
  • each substrate holding space 95 is arranged at the same height as the different discharge holes 90. In this state, when the gas is discharged from the discharge hole 90, the gas discharged in the horizontal direction flows into the substrate holding space 95 having the same height as the discharge hole 90.
  • the structure of the substrate holding portion 82 is such that when the gas released from the discharge hole 90 flows into the substrate holding space 95, the two adjacent substrate holding spaces 95 are blocked, so that the two adjacent substrate holdings are held.
  • the space 95 is not limited to the structure blocked by the partition walls, and as shown in FIG. 6A, holes smaller than the outer periphery of the mask plate 31 are provided in the partition walls between the two adjacent substrate holding spaces 95.
  • two adjacent substrate holding spaces 95 may be connected through holes before the film formation target 1 ′ is arranged in each substrate holding space 95.
  • the mask plate 31 covers the hole and the two adjacent substrate holding spaces 95 are blocked.
  • the structure of the substrate holding portion 82 is not limited to the above configuration as long as the film formation target 1 ′ can be held in the vertical direction in a horizontal state. As shown in FIG. A plurality of film forming objects 1 ′ may be arranged in the same space, that is, connected to each other.
  • the volume of the substrate holding space 95 becomes smaller, and the amount of gas necessary to increase the gas pressure on the surface of the film formation target 1 ′ is smaller. It is preferable because it is completed.
  • the heating device 86 is an infrared lamp, and is disposed outside the vacuum chamber 81 so that the surface of the film formation target 1 ′ held by the substrate holding portion 82 can be heated by irradiating with infrared rays.
  • the heating device 86 of the present invention is not limited to the above configuration as long as it can heat the surface of the film formation target 1 ′ held by the substrate holding portion 82.
  • the heating device 86 is a hot plate capable of generating heat, and a substrate holding space. It may be configured such that it is installed on each of the 95 wall surfaces, and the film formation target 1 ′ is heated by heat conduction.
  • a vacuum exhaust unit 85 is connected to the vacuum chamber 81, and the vacuum exhaust unit 85 is configured so that the inside of the vacuum chamber 81 can be exhausted.
  • ⁇ Film formation method> A method for forming a protective film using the film forming apparatus 10 will be described. Referring to FIG. 1, the vacuum valve between the carry-in / out chamber 16 and the preparation chamber 21 is closed in advance. The pre-process chamber 11, the first transfer chamber 12, the first film formation chambers 13a to 13e, the mask storage chamber 15, and the carry-in / out chamber 16 are evacuated to form a vacuum atmosphere. Thereafter, evacuation is continued to maintain the vacuum atmosphere.
  • Inert gas in the preparation chamber 21, the second transfer chamber 23, the take-out chamber 25, the post-process chamber 27, the second film formation chambers 24a and 24b, the mask insertion chamber 22, and the magnet mask discharge chamber 26 To atmospheric pressure. Thereafter, the introduction of the inert gas is continued to maintain the atmospheric pressure.
  • the first transfer robot 19 is disposed in the first transfer chamber 12.
  • a plurality of first mask plates 9 are stored in the mask storage chamber 15.
  • the first mask plate 9 is taken out from the mask storage chamber 15 and placed in the first film formation chambers 13a to 13e.
  • FIG. 7A is a cross-sectional view of the processing object 1 to be formed by the film forming apparatus 10.
  • a first electrode layer 3, an organic layer 4, and a second electrode layer 5 are sequentially laminated on a glass substrate 2.
  • an electrode lead-out portion and a film forming portion where a protective film is to be formed are predetermined.
  • the processing object 1 is carried into the inversion chamber 14 from the previous process chamber 11 with the second electrode layer 5 directed downward.
  • a reversing device (not shown) for reversing the direction of the front surface and the back surface of the processing object 1 is disposed in the reversing chamber 14. The direction of the processing object 1 is reversed by the reversing device, and the second electrode layer 5 is directed upward.
  • the processing object 1 is taken out from the reversing chamber 14 by the first transfer robot 19 and carried into one of the first film forming chambers 13a to 13e.
  • a plurality of processing objects 1 conveyed sequentially from the previous process chamber 11 are carried into different first film forming chambers 13a to 13e.
  • the first protective film forming method in each of the first film forming chambers 13a to 13e is the same as each other, and the film forming method by PECVD method will be described taking the first film forming chamber 13a as an example.
  • the inside of the vacuum chamber 41 is evacuated by the evacuation device 42, and thereafter the evacuation is continued to maintain the vacuum atmosphere.
  • the mask holding part 49 holds the first mask plate 9 having a shielding part and an opening part in advance.
  • the substrate stage 46 is lowered and separated from the first mask plate 9.
  • the processing object 1 is carried into the vacuum chamber 41 and placed on the substrate stage 46 with the second electrode layer 5 facing upward.
  • the shielding part of the first mask plate 9 is moved to the processing object 1 by moving the substrate stage 46 together with the processing object 1 in the horizontal direction by an alignment means (not shown) and rotating around the vertical rotation axis.
  • the second electrode layer 5 is covered so that the electrode lead-out portion is covered and the film-forming portion of the second electrode layer 5 is exposed from the opening of the first mask plate 9.
  • the positioning means may be configured to move the first mask plate 9 in the horizontal direction and rotate it around the vertical rotation axis so as to align with the stationary processing object 1.
  • the stage lifting device 45 raises the substrate stage 46 together with the processing object 1, and the surface of the processing object 1 is moved to the first mask.
  • Silane (SiH 4 ), ammonia (NH 3 ), and nitrogen (N 2 ) gas are released from the source gas source 43 into the discharge space 44, mixed, and the mixed gas is discharged from the discharge hole 51.
  • the mixed gas discharged from the discharge hole 51 into the vacuum chamber 41 is turned into plasma and chemically reacted to generate SiN particles.
  • the generated SiN particles adhere to the film forming portion exposed from the opening of the first mask plate 9 on the surface of the processing object 1, and as shown in FIG. 7B, the second electrode layer 5.
  • a SiN thin film is formed as the first protective film 6 in close contact with the film forming portion.
  • the first protective film 6 of the present invention is not limited to SiN as long as it is an inorganic substance containing Si in the chemical structure, and SiH 4 gas, NH 3 gas, and nitrogen oxide (N 2 O) gas are supplied from the source gas source 43.
  • a mixed gas may be discharged to form a SiON thin film in close contact with the film forming portion of the second electrode layer 5.
  • SiH 4 gas and N 2 O gas may be released from the source gas source 43 and may be in close contact with the film forming portion of the second electrode layer 5 to form a SiO thin film.
  • SiN has the property of absorbing more visible light than SiON or SiO. Therefore, when the first protective film 6 is made of SiON or SiO instead of SiN, the light transmittance can be improved. After the thickness of the first protective film 6 is determined in advance and the first protective film 6 having a predetermined thickness is formed, the application of the high-frequency voltage is stopped, and the release of the source gas and the reactive gas is stopped.
  • the substrate stage 46 is lowered together with the processing object 1 by the stage elevating device 45, and the processing object 1 is separated from the first mask plate 9.
  • the processing object 1 is unloaded from the vacuum chamber 41 while maintaining the vacuum atmosphere in the vacuum chamber 41.
  • the processing object 1 on which the first protective film 6 is formed is taken out from the first film forming chamber 13 a by the first transfer robot 19 and put into the loading / unloading chamber 16. This transport process is repeated for the processing object 1 formed in the other first film forming chambers 13b to 13e.
  • the vacuum valve between the loading / unloading chamber 16 and the first transfer chamber 12 is closed.
  • An inert gas is caused to flow into the carry-in / out chamber 16 to obtain atmospheric pressure.
  • the vacuum valve between the loading / unloading chamber 16 and the preparation chamber 21 is opened.
  • a shelf 92 is disposed in the magnet mask insertion chamber 22.
  • a plurality of magnet plates 32 and metal second mask plates 31 are stored in the shelf 92 and held horizontally.
  • the charging chamber 21 has an upper space 21a and a lower space 21b.
  • a shelf 92 in which the magnet plate 32 and the second mask plate 31 are stored is moved in advance from the magnet mask insertion chamber 22 to the upper space 21 a of the preparation chamber 21.
  • a second transfer robot 91 is disposed in the second transfer chamber 23.
  • the second transfer robot 91 takes out the magnet plate 32 from the shelf 92 in the upper space 21a of the preparation chamber 21 and puts it in the lower space 21b.
  • a mask plate holding rod 37 that holds the second mask plate 31
  • a substrate holding pin 36 that holds the processing object 1
  • a magnet plate holding rod 35 that holds the magnet plate 32.
  • FIG. 3A shows a state in which the mask plate holding rod 37, the substrate holding pin 36, and the magnet plate holding rod 35 hold the second mask plate 31, the object 1 to be processed, and the magnet plate 32, respectively.
  • FIG. 3B is a sectional view taken along the line AA
  • FIG. 3C is a sectional view taken along the line BB.
  • illustration of the mask plate holding rod 37, the substrate holding pin 36, and the magnet plate holding rod 35 is omitted.
  • a 2nd mask board attachment process is demonstrated.
  • the upper end of the substrate holding pin 36 and the upper end of the mask plate holding bar 37 are arranged in advance at a position lower than the upper end of the magnet plate holding bar 35.
  • the magnet plate 32 is carried from the upper space 21a to the lower space 21b by the second transfer robot 91 and placed on the magnet plate holding bar 35 to be held horizontally.
  • a magnet plate notch 33 is provided at a position where the substrate holding pin 36 and the mask plate holding rod 37 overlap each other in the magnet plate 32.
  • the upper end of the substrate holding pin 36 is arranged at a position higher than the magnet plate 32, and the upper end of the mask plate holding rod 37 is arranged at a position higher than the upper end of the substrate holding pin 36.
  • the processing object 1 is carried into the lower space 21b of the preparation chamber 21 from the loading / unloading chamber 16, and the processing object 1 is placed on the substrate holding pins 36 and held horizontally with reference to FIG.
  • the substrate holding pin 36 is lowered together with the processing object 1, and the processing object 1 is placed on the magnet plate 32.
  • the second mask plate 31 is carried into the lower space 21b from the upper space 21a of the preparation chamber 21 by the second transfer robot 91 and is placed on the mask holding rod 37 and held horizontally.
  • the second mask plate 31 is moved in the horizontal direction by the alignment means (not shown) and rotated around the vertical rotation axis so that the shielding portion of the second mask plate 31 is the second of the processing object 1.
  • the electrode lead portion of the electrode layer 5 is covered, and alignment is performed so that the first protective film 6 is exposed from the opening portion of the second mask plate 31.
  • the mask holding rod 37 is lowered together with the second mask plate 31, and the second mask plate 31 is placed on the processing object 1. Put it on.
  • a mask plate notch 34 is provided at a position overlapping the magnet plate holding bar 35 in the second mask plate 31, and the second mask plate 31 is lowered. Even so, the second mask plate 31 does not collide with the magnet plate holding bar 35.
  • the second mask plate 31 is pressed against and closely contacts the processing object 1 by the magnetic force (attraction) from the magnet plate 32, and the relative positional relationship between the second mask plate 31 and the processing object 1 is an external force such as vibration. It does not change even if you receive it.
  • the film formation target in a state where the magnet plate 32, the processing target 1, and the second mask plate 31 are sequentially stacked is denoted by reference numeral 1 ′.
  • the film forming object 1 ′ is taken out from the lower space 21 b of the preparation chamber 21 by the second transfer robot 91 and is carried into the second film forming chamber 24 a.
  • the above-described second mask plate mounting step is repeated for a plurality of processing objects 1 stored in the carry-in / out chamber 16 to form a plurality of film-forming objects 1 ′ as a second component. It carries in to the film
  • ⁇ Second protective film formation step> A second protective film formation method by the ALD method in the second film formation chamber 24a will be described.
  • the vacuum chamber 81 is evacuated by the vacuum evacuation unit 85, and N 2 gas is released here as the purge gas from the purge gas release unit 87, and the vacuum chamber 81 is kept at atmospheric pressure.
  • the substrate holding part 82 is lowered to the height of the second transfer robot 91.
  • the film formation target 1 ′ is carried into the vacuum chamber 81 and placed in the substrate holding space 95 of the substrate holding unit 82. While the substrate holding unit 82 is raised or lowered by the substrate holding unit lifting / lowering device 89, the film formation objects 1 ′ are arranged one by one in each substrate holding space 95.
  • the substrate holder 82 is raised by the substrate holder lifting device 89, and each substrate holding space 95 is arranged at the same height as the different discharge holes 90 of the gas introduction pipe 88.
  • the processing object 1 ′ is heated to 80 ° C. by the heating device 86.
  • TMA trimethylaluminum
  • the raw material gas discharged from each discharge hole 90 in the horizontal direction is introduced into the substrate holding space 95 located at the same height as the discharge hole 90, and the molecules of the raw material gas are chemically adsorbed on the surface of the processing object 1 ′. To do. After the source gas molecules are chemically adsorbed on the surface of the processing object 1 ′, the release of the source gas from the source gas discharge part 83 is stopped.
  • purge gas is discharged from the purge gas discharge portion 87.
  • the purge gas discharged from each discharge hole 90 is introduced into the substrate holding space 95.
  • the pressure in the substrate holding space 95 is increased by the purge gas, and the source gas is pushed out from the substrate holding space 95.
  • the source gas that has been pushed out of the substrate holding space 95 and diffused into the vacuum chamber 81 is evacuated by the evacuation unit 85.
  • water vapor (H 2 O) is discharged as a reactive gas from the reactive gas discharge portion 84 here for 0.1 seconds to 5 seconds.
  • the reaction gas discharged in the horizontal direction from each discharge hole 90 is introduced into the substrate holding space 95 located at the same height as the discharge hole 90, and the source gas adhering to the surface of the processing object 1 ′ is introduced. As shown in FIG. 7 (c), it reacts with the molecules, and comes into close contact with the first protective film 6, thereby forming a thin film of alumina (Al 2 O 3 ) as the second protective film 7. Since the electrode lead-out portion of the second electrode layer 5 is covered with the shielding portion of the second mask plate 31, no thin film is formed.
  • the reaction gas discharge from the reaction gas discharge unit 85 is stopped.
  • the purge gas is discharged from the purge gas discharge portion 87.
  • the purge gas discharged from the discharge hole 90 is introduced into the substrate holding space 95.
  • the pressure in the substrate holding space 95 is increased by the purge gas, and the reaction gas is pushed out from the substrate holding space 95.
  • the reaction gas pushed out from the substrate holding space 95 and diffused into the vacuum chamber 81 is evacuated by the evacuation unit 85.
  • the first to fourth steps may be sequentially repeated for a plurality of cycles until the second protective film 7 having a desired thickness is formed.
  • the thickness of the second protective film 7 is preferably 10 nm or more and 100 nm or less. If the thickness is less than 10 nm, the moisture blocking performance is insufficient as a sealing film of the organic EL element, and if it is thicker than 100 nm, light transmittance cannot be obtained.
  • the second protective film 7 is an interface with a particle mixed in the first protective film 6 or a pinhole. Fills spaces such as cracks and cracks to improve the moisture barrier performance (sealing performance) of the protective film.
  • the ALD method has a slower film formation speed than the PECVD method.
  • the second protective film 7 is simultaneously formed on the plurality of film formation objects 1 ′, so that one sheet is formed.
  • Productivity is higher than film formation.
  • the film formation object 1 ′ assembled in the preparation chamber 21 is changed to the other second film formation. If it carries in to the chamber 24b, it will prevent that the flow of board
  • FIG. 8 shows an internal configuration diagram of the second film forming chamber 24 a, the second transfer chamber 23, the take-out chamber 25, and the magnet mask discharge chamber 26.
  • the extraction chamber 25 here has an upper space 25a and a lower space 25b.
  • a shelf 92 ′ configured to accommodate the second mask plate 31 and the magnet plate 32 is disposed in the upper space 25a, and the film formation target 1 ′ and the magnet plate 32 and the processing target 1 are disposed in the lower space 25b.
  • An unillustrated detaching device that separates into a second mask plate 31 is disposed.
  • the film forming object 1 ′ is taken out from the second film forming chamber 24 a by the second transfer robot 91 and put into the lower space 25 b of the take-out chamber 25.
  • the used second mask plate 31 is removed from the processing object 1 by a removing device.
  • the second transfer robot 91 stores the removed second mask plate 31 in a shelf 92 ′ arranged in the upper space 25a.
  • the processing object 1 is lifted from the magnet plate 32 by the removing device, and the processing object 1 is conveyed to the post-process chamber 27 with reference to FIG.
  • the second transfer robot 91 stores the magnet plate 32 left in the lower space 25b in the shelf 92 ′ of the upper space 25a.
  • the shelf 92 ′ in which the used second mask plate 31 and the magnet plate 32 are stored is taken out from the take-out chamber 25 to the magnet mask discharge chamber 26 and is sent to the cleaning process.
  • the second protective film 7 is formed in close contact with the first protective film 6. Until the process is completed, the integrated vacuum process is performed, that is, the processing object 1 is not exposed to the outside air. Therefore, before the second protective film 7 is formed, the outside air particles do not adhere to the surface of the first protective film 6, and the second protective film 7 has a higher adhesion than when exposed to the outside air. A film can be formed, and the sealing performance of the protective film is improved.
  • FIG. 5 shows an internal configuration diagram of a second example of the first film forming chamber 13a.
  • the first film forming chamber 13 a includes a vacuum chamber 61, a substrate stage 66, and a target holding plate 63.
  • the substrate stage 66 is disposed in the vacuum chamber 61 and configured to hold the processing object 1 on the surface facing upward.
  • the target holding plate 63 is disposed above the substrate stage 66, and a flat target 64 is fixed to the surface facing the substrate stage 66.
  • a high frequency power supply 68 is electrically connected to the target holding plate 63 so that a high frequency voltage can be applied to the target holding plate 63.
  • a mask holding portion 69 configured to hold the first mask plate 9 horizontally is disposed.
  • a stage elevating device 65 is disposed below the substrate stage 66, and is configured to be able to move the substrate stage 66 along the vertical direction together with the processing target 1.
  • the substrate stage 66 is raised, the surface of the processing object 1 on the substrate stage 66 comes close to and comes into contact with the back surface of the first mask plate 9 held by the mask holding unit 69, and when the substrate stage 66 is lowered, the processing is performed.
  • the object 1 is separated from the first mask plate 9.
  • a gas introducing device 67 is connected to the vacuum chamber 61 so that gas can be introduced inside.
  • a vacuum exhaust device 62 is connected to the vacuum chamber 61 so that the inside can be evacuated.
  • a first protective film formation method by sputtering will be described using the first film formation chamber 13a of the second example.
  • the inside of the vacuum chamber 61 is evacuated by the vacuum evacuation device 62, and then the evacuation is continued to maintain the vacuum atmosphere in the vacuum chamber 61.
  • a Si target 64 is attached in advance to the target holding portion 63.
  • the substrate stage 66 is lowered and separated from the first mask plate 9 held by the mask holding unit 69.
  • the object to be processed 1 is carried into the vacuum chamber 61 and placed on the substrate stage 66 with the second electrode layer 5 facing upward.
  • the shielding part of the first mask plate 9 is moved to the processing object 1 by moving the substrate stage 66 together with the processing object 1 in the horizontal direction by an alignment means (not shown) and rotating around the vertical rotation axis.
  • the second electrode layer 5 is covered so that the electrode lead-out portion of the second electrode layer 5 is exposed from the opening of the first mask plate 9.
  • the positioning means may be configured to move the first mask plate 9 in the horizontal direction and rotate it around a vertical rotation axis so as to align with the stationary processing object 1.
  • the stage lifting device 65 raises the substrate stage 66 together with the processing object 1, and the surface of the processing object 1 is moved to the first mask. Contact the back surface of the plate 9.
  • a mixed gas of N 2 gas and Ar gas is released from the gas introduction device 67 into the vacuum chamber 61.
  • the Ar gas is turned into plasma, Ar ions are incident on the target 64, and Si particles are blown off from the target 64.
  • the Si particles released from the target 64 react with N 2 gas to generate SiN, and the generated SiN particles are formed on the first mask plate 9 in the second electrode layer 5 on the surface of the processing object 1.
  • a thin film of SiN is formed as the first protective film 6 by reaching and adhering to the film forming part exposed from the opening and in close contact with the film forming part.
  • the first protective film 6 of the present invention is not limited to SiN as long as it is an inorganic substance containing Si in the chemical structure, and a mixed gas of O 2 gas, N 2 gas and Ar gas is released from the gas introducing device 67, A thin film of SiON may be formed in close contact with the film forming portion of the second electrode layer 5.
  • a mixed gas of O 2 gas and Ar gas may be released from the gas introducing device 67 and may be in close contact with the film forming portion of the second electrode layer 5 to form a SiO thin film.
  • the application of the high frequency voltage is stopped, and the emission of the sputtering gas and the reactive gas is stopped.
  • the substrate stage 66 is lowered by the stage elevating device 65 to separate the processing target portion 1 from the first mask plate 9.
  • the processing object 1 is unloaded from the vacuum chamber 61 while maintaining the vacuum atmosphere in the vacuum chamber 66.
  • the momentum of particles emitted from the target 64 is larger than the momentum of particles generated by the PECVD method, and there is a possibility that the layer structure of the processing object 1 is damaged when the particles collide with the processing object 1. For this reason, it is preferable to form the first protective film 6 by PECVD rather than sputtering.
  • ⁇ Second example of film formation method> As described above, in the step of forming the protective film of the organic EL element, it is necessary to expose the electrode lead-out portion of the second electrode layer 5 from the protective film.
  • the method is not limited to the method in which the second protective film 7 is formed by the ALD method in a state where the shield part of the plate 31 covers the electrode lead part of the second electrode layer 5.
  • FIG. 9 shows a plan view of a second example of the film forming apparatus 10 ′.
  • the preparation chamber 21, the mask insertion chamber 22, the take-out chamber 25, and the magnet mask discharge chamber 26 are deleted from the film forming apparatus 10 of the first example, and the standby chamber 28 is removed. And an etching chamber 29 are added.
  • the pre-process chamber 11, the inversion chamber 14, the first transfer chamber 12, the carry-in / out chamber 16, the second transfer chamber 23, the standby chamber 28, and the post-process chamber 27 are connected in series in this order. Has been.
  • the etching chamber 29 is connected to the standby chamber 28.
  • FIG. 10 shows an internal configuration diagram of the etching chamber 29.
  • the etching chamber 29 includes a vacuum chamber 71, a substrate stage 76, a mask holding unit 79, and a sputtering gas introduction device 77.
  • the substrate stage 76 is disposed in the vacuum chamber 71 and configured to hold the processing object 1 on the surface facing upward.
  • a high frequency power supply 78 is electrically connected to the substrate stage 76 so that a high frequency voltage can be applied to the substrate stage 76.
  • the mask holding unit 79 is arranged above the substrate stage 76 and is configured to hold the third mask plate horizontally.
  • Reference numeral 73 denotes a third mask plate held by the mask holding portion 79.
  • a stage elevating device 75 is disposed below the substrate stage 76, and is configured to be able to move the substrate stage 76 along the vertical direction together with the processing target 1.
  • the substrate stage 76 is raised, the surface of the processing object 1 on the substrate stage 76 approaches and comes into contact with the back surface of the third mask plate 73 held by the mask holding unit 79, and when the substrate stage 76 is lowered, the processing is performed.
  • the object 1 is separated from the third mask plate 73.
  • the sputter gas introducing device 77 is connected to the vacuum chamber 71 and is configured to be able to introduce a sputter gas into the inside.
  • a vacuum exhaust device 72 is connected to the vacuum chamber 71 so that the inside can be evacuated.
  • the first protective film 6 is formed in the first film forming chambers 13a to 13e in the same manner as the first protective film forming process described above. At this time, since the film is formed in a state where the electrode lead portion of the second electrode layer 5 of the processing object 1 is covered with the shielding portion of the first mask plate 9, the film is adhered to the film forming portion of the second electrode layer 5. The first protective film 6 is formed, but the first protective film 6 is not formed on the electrode lead portion of the second electrode layer 5.
  • the processing object 1 is unloaded from the first film forming chambers 13a to 13e and loaded into the loading / unloading chamber 16 in the same manner as the film forming method of the first example.
  • the vacuum valve between the one transfer chamber 12 and the carry-in / out chamber 16 is closed to bring the inside of the carry-in / out chamber 16 to atmospheric pressure.
  • One or a plurality of processing objects 1 stored in the loading / unloading chamber 16 are loaded into the second film forming chambers 24a and 24b by the second transfer robot 91 without attaching the second mask plate 31. To do. That is, unlike the film forming method of the first example, the second mask plate attaching step is not performed. Next, the second protective film 7 is formed in the second film formation chambers 24a and 24b in the same manner as in the second protective film formation process described above.
  • the electrode lead-out part of the second electrode layer 5 is not covered with the shielding part of the second mask plate 31, and the second protective film 7 is composed of the first protective film 6 and the electrode of the second electrode layer 5.
  • the film is formed in close contact with both of the drawer portions.
  • the vacuum valve between the second transfer chamber 23 and the standby chamber 28 is closed, and the inside of the standby chamber 28 is evacuated to make a vacuum atmosphere.
  • the inside of the etching chamber 29 is previously placed in a vacuum atmosphere.
  • the vacuum valve between the standby chamber 28 and the etching chamber 28 is opened, and the processing object 1 is carried into the etching chamber 29.
  • the 2nd protective film removal method in the etching chamber 29 is demonstrated.
  • the inside of the vacuum chamber 71 is evacuated by the vacuum evacuation device 72, and the evacuation is continued thereafter to maintain the vacuum atmosphere in the vacuum chamber 71.
  • a third mask plate 73 is attached to the mask holding portion 79 in advance.
  • the substrate stage 76 is lowered and separated from the third mask plate 73.
  • the object 1 to be processed is carried into the vacuum chamber 71 and placed on the substrate stage 76 with the second protective film 7 facing upward.
  • the shielding part of the third mask plate 73 is second protected by moving the substrate stage 76 together with the processing object 1 in the horizontal direction by an alignment means (not shown) and rotating it around a vertical rotation axis.
  • a range of the film 7 that covers the first protective film 6 is covered, and a range of the second protective film 7 that overlaps the electrode lead-out portion of the second electrode layer 5 is exposed from the opening of the third mask plate 73. Align so that.
  • the positioning means may be configured to move the third mask plate 73 in the horizontal direction and rotate it around the vertical rotation axis so as to align with the stationary processing object 1.
  • the stage lifting device 75 raises the substrate stage 76 together with the processing object 1, and the surface of the processing object 1 is moved to the third mask. Contact the back surface of the plate 73. Ar gas is sputtered from the sputter gas introduction device 77 as a sputter gas into the vacuum chamber 71.
  • the electrode lead portion of the second electrode layer 5 is exposed. Since the range of the second protective film 7 that overlaps the first protective film 6 is covered with the shielding part of the third mask plate 73, it is not etched and the first protective film 6 is not exposed. After exposing the electrode lead-out portion of the second electrode layer 5, the application of the high-frequency voltage is stopped and the introduction of the sputtering gas is stopped.
  • the substrate stage 76 is lowered by the stage elevating device 75 to separate the processing target portion 1 from the third mask plate 73.
  • the processing object 1 is unloaded from the vacuum chamber 71 while maintaining the vacuum atmosphere in the vacuum chamber 71.
  • a SiN film having a thickness of 1 ⁇ m was formed by PECVD method in close contact with a polyimide film (here Kapton (registered trademark) film), and then an Al 2 O 3 film having a thickness of 100 nm was formed in close contact with the SiN film by ALD method. To form a first sample.
  • a polyimide film here Kapton (registered trademark) film
  • Al 2 O 3 film having a thickness of 100 nm was formed in close contact with the SiN film by ALD method.
  • a SiN film having a thickness of 1 ⁇ m was formed by PECVD method in close contact with another film, and then an Al 2 O 3 film having a thickness of 50 nm was formed in close contact with the SiN film by ALD method.
  • a sample was prepared.
  • a SiN film having a thickness of 2 ⁇ m was formed by PECVD in close contact with another film, and then an Al 2 O 3 film having a thickness of 100 nm was formed in close contact with the SiN film by ALD.
  • a sample was prepared.
  • a SiN film having a thickness of 2 ⁇ m is formed in close contact with another film by PECVD, and then an Al 2 O 3 film is formed in a thickness of 50 nm by close contact with the SiN film by ALD.
  • a sample was prepared.
  • an SiN film having a thickness of 1 ⁇ m was formed by PECVD method in close contact with another film, and then the object to be treated was once exposed to the outside air, and then in close contact with the SiN film, an Al 2 O 3 film was formed to 100 nm by ALD method.
  • a fifth sample was prepared by forming a film with a thickness of.
  • a SiN film having a thickness of 1 ⁇ m was formed in close contact with another film by a PECVD method to prepare a comparative sample.
  • the water vapor transmission rate (g / m 2 / day) was measured by an infrared sensor method (mocon method).
  • the water vapor transmission rate is defined in JIS K7129: 2008, and the infrared sensor method is defined in JIS K7129: 2008 Annex B.
  • the water vapor permeability is reduced by laminating the Al 2 O 3 thin film in close contact with the SiN thin film by the ALD method. That is, it is recognized that the moisture barrier performance is improved.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne une technique visant à améliorer la performance d'étanchéité d'un film utilisé pour protéger un élément électroluminescent organique. Un premier film protecteur (6), formé d'un matériau inorganique contenant du Si dans sa structure chimique, est formé par une méthode de dépôt chimique en phase vapeur activé par plasma ou par une méthode de pulvérisation de manière à être en contact étroit avec une seconde couche d'électrode (5) d'un objet à traiter (1), une première couche d'électrode (3), une couche organique (4) et la seconde couche d'électrode (5) étant stratifiées séquentiellement sur un substrat (2), puis un second film protecteur (7) en Al2O3 formé par une méthode de dépôt de couche atomique de manière à être en contact étroit avec le premier film protecteur (6). L'objet à traiter (1) n'est plus exposé à l'air extérieur depuis le moment où commence la formation du premier film protecteur (6) en contact étroit avec la seconde couche d'électrode (5) jusqu'au moment où s'achève la formation du second film protecteur (7) en contact étroit avec le premier film protecteur (6).
PCT/JP2011/070732 2010-09-22 2011-09-12 Procédé de fabrication d'élément électroluminescent, appareil filmogène et élément électroluminescent organique. WO2012039310A1 (fr)

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JP2022060285A (ja) * 2014-10-28 2022-04-14 株式会社半導体エネルギー研究所 機能パネル
JP2022062027A (ja) * 2014-10-28 2022-04-19 株式会社半導体エネルギー研究所 表示装置
JP2016085460A (ja) * 2014-10-28 2016-05-19 株式会社半導体エネルギー研究所 機能パネル、機能パネルの作製方法、モジュール、情報処理装置
KR102450267B1 (ko) * 2016-06-14 2022-09-30 아익스트론 에스이 코팅 디바이스 및 코팅 방법
JP6997727B2 (ja) 2016-06-14 2022-01-18 アイクストロン、エスイー コーティング装置およびコーティング方法
KR20190018687A (ko) * 2016-06-14 2019-02-25 아익스트론 에스이 코팅 디바이스 및 코팅 방법
JP2019519685A (ja) * 2016-06-14 2019-07-11 アイクストロン、エスイー コーティング装置およびコーティング方法
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