TW201230428A - Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device - Google Patents
Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device Download PDFInfo
- Publication number
- TW201230428A TW201230428A TW100133214A TW100133214A TW201230428A TW 201230428 A TW201230428 A TW 201230428A TW 100133214 A TW100133214 A TW 100133214A TW 100133214 A TW100133214 A TW 100133214A TW 201230428 A TW201230428 A TW 201230428A
- Authority
- TW
- Taiwan
- Prior art keywords
- protective film
- chamber
- film
- organic
- mask
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000010409 thin film Substances 0.000 title description 2
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 230000001681 protective effect Effects 0.000 claims abstract description 108
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 52
- 239000010410 layer Substances 0.000 claims abstract description 46
- 238000004544 sputter deposition Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000012044 organic layer Substances 0.000 claims abstract description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims abstract description 4
- 239000011147 inorganic material Substances 0.000 claims abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 claims description 95
- 239000000463 material Substances 0.000 claims description 26
- 239000012495 reaction gas Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000007599 discharging Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052593 corundum Inorganic materials 0.000 abstract description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 282
- 238000012546 transfer Methods 0.000 description 32
- 239000002245 particle Substances 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- 238000009489 vacuum treatment Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 235000021185 dessert Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010212859 | 2010-09-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201230428A true TW201230428A (en) | 2012-07-16 |
Family
ID=45873799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100133214A TW201230428A (en) | 2010-09-22 | 2011-09-15 | Method for manufacturing organic EL device, apparatus for forming a thin film, and organic EL device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2012039310A1 (fr) |
TW (1) | TW201230428A (fr) |
WO (1) | WO2012039310A1 (fr) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9023693B1 (en) | 2013-11-27 | 2015-05-05 | Industrial Technology Research Institute | Multi-mode thin film deposition apparatus and method of depositing a thin film |
CN104752633A (zh) * | 2013-12-31 | 2015-07-01 | 中国科学院微电子研究所 | 一种薄膜封装方法 |
CN105679964A (zh) * | 2016-03-28 | 2016-06-15 | 中国电子科技集团公司第五十五研究所 | 有机电致发光器件的封装结构及方法 |
CN105789473A (zh) * | 2014-12-22 | 2016-07-20 | 昆山国显光电有限公司 | 柔性衬底及其制备方法 |
CN106299153A (zh) * | 2016-10-10 | 2017-01-04 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜封装方法及其结构 |
CN107111972A (zh) * | 2014-10-28 | 2017-08-29 | 株式会社半导体能源研究所 | 功能面板、功能面板的制造方法、模块、数据处理装置 |
CN109155343A (zh) * | 2016-05-18 | 2019-01-04 | Tes股份有限公司 | 发光二极管的保护膜的沉积方法 |
US10367014B2 (en) | 2014-10-28 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5772736B2 (ja) * | 2012-06-18 | 2015-09-02 | 株式会社デンソー | 原子層蒸着装置 |
WO2014112512A1 (fr) * | 2013-01-15 | 2014-07-24 | 株式会社アルバック | Dispositif et procédé d'alignement |
JP6076098B2 (ja) * | 2013-01-15 | 2017-02-08 | 株式会社アルバック | アラインメント装置、及びアラインメント方法 |
KR101579527B1 (ko) * | 2013-09-16 | 2015-12-22 | 코닉이앤씨 주식회사 | 스캔형 반응기를 가지는 원자층 증착 장치 및 방법 |
CN106415876B (zh) * | 2014-01-21 | 2018-06-26 | 应用材料公司 | 允许低压力工具替换的薄膜封装处理系统和工艺配件 |
US9443876B2 (en) | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
DE102016110884A1 (de) * | 2016-06-14 | 2017-12-14 | Aixtron Se | Vorrichtung und Verfahren zum Abscheiden organischer Schichten auf ein oder mehreren Substraten |
JP6788935B2 (ja) | 2016-08-16 | 2020-11-25 | 株式会社日本製鋼所 | 有機el素子用の保護膜の形成方法および表示装置の製造方法 |
CN108448006B (zh) * | 2018-03-29 | 2021-01-22 | 京东方科技集团股份有限公司 | 封装结构、电子装置以及封装方法 |
JP6929265B2 (ja) * | 2018-12-13 | 2021-09-01 | キヤノン株式会社 | 有機発光装置とその製造方法、照明装置、移動体、撮像装置、電子機器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4556282B2 (ja) * | 2000-03-31 | 2010-10-06 | 株式会社デンソー | 有機el素子およびその製造方法 |
JP2003347042A (ja) * | 2002-05-24 | 2003-12-05 | Denso Corp | 有機電子デバイス用の封止膜およびその製造方法 |
JP4165227B2 (ja) * | 2003-01-07 | 2008-10-15 | 株式会社デンソー | 有機el表示装置 |
TWI388078B (zh) * | 2008-01-30 | 2013-03-01 | Osram Opto Semiconductors Gmbh | 電子組件之製造方法及電子組件 |
KR101084267B1 (ko) * | 2009-02-26 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
-
2011
- 2011-09-12 JP JP2012534998A patent/JPWO2012039310A1/ja active Pending
- 2011-09-12 WO PCT/JP2011/070732 patent/WO2012039310A1/fr active Application Filing
- 2011-09-15 TW TW100133214A patent/TW201230428A/zh unknown
Cited By (16)
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CN104674191A (zh) * | 2013-11-27 | 2015-06-03 | 财团法人工业技术研究院 | 多模式薄膜沉积设备以及薄膜沉积方法 |
US9023693B1 (en) | 2013-11-27 | 2015-05-05 | Industrial Technology Research Institute | Multi-mode thin film deposition apparatus and method of depositing a thin film |
CN104752633A (zh) * | 2013-12-31 | 2015-07-01 | 中国科学院微电子研究所 | 一种薄膜封装方法 |
TWI722676B (zh) * | 2014-10-28 | 2021-03-21 | 日商半導體能源研究所股份有限公司 | 功能面板、功能面板的製造方法、模組以及資料處理裝置 |
US11824068B2 (en) | 2014-10-28 | 2023-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
US11818856B2 (en) | 2014-10-28 | 2023-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, method for manufacturing the same, module, data processing device |
CN107111972A (zh) * | 2014-10-28 | 2017-08-29 | 株式会社半导体能源研究所 | 功能面板、功能面板的制造方法、模块、数据处理装置 |
US11075232B2 (en) | 2014-10-28 | 2021-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
US11071224B2 (en) | 2014-10-28 | 2021-07-20 | Semiconductor Energy Laboratory Co., Ltd. | Functional panel, method for manufacturing the same, module, data processing device |
US10367014B2 (en) | 2014-10-28 | 2019-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method of display device, and electronic device |
TWI718111B (zh) * | 2014-10-28 | 2021-02-11 | 日商半導體能源研究所股份有限公司 | 功能面板、功能面板的製造方法、模組以及資料處理裝置 |
CN105789473A (zh) * | 2014-12-22 | 2016-07-20 | 昆山国显光电有限公司 | 柔性衬底及其制备方法 |
CN105789473B (zh) * | 2014-12-22 | 2018-11-09 | 昆山国显光电有限公司 | 柔性衬底及其制备方法 |
CN105679964A (zh) * | 2016-03-28 | 2016-06-15 | 中国电子科技集团公司第五十五研究所 | 有机电致发光器件的封装结构及方法 |
CN109155343A (zh) * | 2016-05-18 | 2019-01-04 | Tes股份有限公司 | 发光二极管的保护膜的沉积方法 |
CN106299153A (zh) * | 2016-10-10 | 2017-01-04 | 昆山工研院新型平板显示技术中心有限公司 | 一种薄膜封装方法及其结构 |
Also Published As
Publication number | Publication date |
---|---|
WO2012039310A1 (fr) | 2012-03-29 |
JPWO2012039310A1 (ja) | 2014-02-03 |
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