WO2010071182A1 - 光半導体装置用リードフレーム及びその製造方法 - Google Patents
光半導体装置用リードフレーム及びその製造方法 Download PDFInfo
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- WO2010071182A1 WO2010071182A1 PCT/JP2009/071064 JP2009071064W WO2010071182A1 WO 2010071182 A1 WO2010071182 A1 WO 2010071182A1 JP 2009071064 W JP2009071064 W JP 2009071064W WO 2010071182 A1 WO2010071182 A1 WO 2010071182A1
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- alloy
- lead frame
- optical semiconductor
- semiconductor device
- layer
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 230000003287 optical effect Effects 0.000 title claims abstract description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 90
- 229910052709 silver Inorganic materials 0.000 claims abstract description 90
- 239000004332 silver Substances 0.000 claims abstract description 90
- 230000007797 corrosion Effects 0.000 claims abstract description 47
- 238000005260 corrosion Methods 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000007769 metal material Substances 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 229910045601 alloy Inorganic materials 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- 229910000846 In alloy Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims description 8
- 229910001020 Au alloy Inorganic materials 0.000 claims description 8
- 229910000629 Rh alloy Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 8
- 239000003353 gold alloy Substances 0.000 claims description 8
- 239000010948 rhodium Substances 0.000 claims description 8
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 7
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 7
- 238000005486 sulfidation Methods 0.000 claims description 7
- 229910000531 Co alloy Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 4
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 claims description 4
- IOBIJTFWSZQXPN-UHFFFAOYSA-N [Rh].[Ag] Chemical compound [Rh].[Ag] IOBIJTFWSZQXPN-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 109
- 238000007747 plating Methods 0.000 description 83
- 238000002310 reflectometry Methods 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 7
- 238000005238 degreasing Methods 0.000 description 6
- 229910000640 Fe alloy Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 230000007774 longterm Effects 0.000 description 5
- 238000005554 pickling Methods 0.000 description 5
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 229910001252 Pd alloy Inorganic materials 0.000 description 3
- 238000002845 discoloration Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910021617 Indium monochloride Inorganic materials 0.000 description 2
- 241000080590 Niso Species 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005987 sulfurization reaction Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910017392 Au—Co Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- 229910000575 Ir alloy Inorganic materials 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 101150003085 Pdcl gene Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- JMGVPAUIBBRNCO-UHFFFAOYSA-N [Ru].[Ag] Chemical compound [Ru].[Ag] JMGVPAUIBBRNCO-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical group [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- DOBRDRYODQBAMW-UHFFFAOYSA-N copper(i) cyanide Chemical compound [Cu+].N#[C-] DOBRDRYODQBAMW-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- ZNNZYHKDIALBAK-UHFFFAOYSA-M potassium thiocyanate Chemical compound [K+].[S-]C#N ZNNZYHKDIALBAK-UHFFFAOYSA-M 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to a lead frame for an optical semiconductor device and a manufacturing method thereof.
- Lead frames for optical semiconductor devices have been widely used as various display / illumination light sources that use LED elements or the like as light sources.
- a lead frame is arranged on a substrate, and after mounting a light emitting element on the lead frame, the light source is prevented in order to prevent deterioration of the light source due to heat, moisture, oxidation, and the surrounding portion. And its periphery is sealed with a sealing resin.
- Patent Document 1 a silver or silver alloy layer having excellent light reflection characteristics is often formed immediately below the light source.
- a silver plating layer may be formed near the reflector.
- Patent Document 2 discloses that the reflection characteristics are improved by setting the crystal grain size of silver or a silver alloy film to 0.5 ⁇ m to 30 ⁇ m. Further, Patent Document 2 proposes a method of manufacturing a silver film having the above crystal grain size by performing a heat treatment at 200 ° C. or more for 30 seconds or more after the silver film is formed.
- Patent Document 3 a method of forming 0.005 to 0.15 ⁇ m of palladium on a nickel underlayer and 0.003 to 0.05 ⁇ m of rhodium on the outermost layer is disclosed. ing.
- Patent Document 2 describes that the surface roughness of the surface material of the surface layer silver film is such that the maximum height Ry is 0.5 ⁇ m or more. The roughness in the vicinity of the outermost layer affects not the roughness. For this reason, a silver film is formed on the substrate or the base plating by plating or vapor deposition that constitutes the reflective layer, and thus it may not make sense to define the roughness of the base.
- Ry means the difference between the maximum value and the minimum value of roughness, and it is highly likely to mean the numerical value of minute portions such as irregularities only on a specific part of the surface, for example, a line-shaped scratch. Since it does not indicate the roughness of the entire range depending on reflection, it may not be suitable as a parameter indicating the characteristics of the reflective layer.
- the lead frame produced based on the technique described in these documents was used for an LED, the luminance was lowered over time.
- the encapsulated resin contained a small amount of sulfur component, which caused the silver to turn black and reduce the luminance due to sulfuration of silver on the surface of the lead frame. Also, migration is likely to occur in pure silver.
- the reflection characteristics important for optical semiconductor devices are reduced by 20% or more in the case of rhodium, for example, with a reflectance of 400 to 800 nm including particularly important visible light region. Therefore, simply by thinly coating rhodium, the required characteristics of reflectance cannot be satisfied for blue or white optical semiconductor devices.
- the present invention is a lead frame having good reflection characteristics from 300 nm in the ultraviolet region to 800 nm in the near infrared region, and further has heat dissipation, corrosion resistance (particularly corrosion resistance against sulfidation corrosion), and long-term stability of reflectance.
- the metal layer has a thickness of 0.2 ⁇ m or less, the reflectance of light in the wavelength range from the ultraviolet region to the near infrared region is more or less affected by the underlying metal. I understood it.
- the corrosion resistant film does not expose the pure silver layer. It was found that it can be formed.
- a lead frame for an optical semiconductor device in which a pure silver layer made of pure silver is formed on a substrate, the arithmetic average height Ra of the pure silver layer being 0.001 to 0.2 ⁇ m, and its surface
- a metal layer with excellent corrosion resistance of 0.001 to 0.2 ⁇ m long-term stability of reflectivity by maintaining the high reflectivity characteristics of the pure silver layer and excellent corrosion resistance against sulfidation corrosion
- the present invention (1) A lead frame for an optical semiconductor device in which a pure silver layer made of pure silver is formed on a substrate, the arithmetic average height Ra of the pure silver layer being 0.001 to 0.2 ⁇ m, and on the surface thereof A lead frame for an optical semiconductor device, wherein a film having an average film thickness of 0.001 ⁇ m or more and 0.2 ⁇ m or less made of a metal material excellent in corrosion resistance against sulfidation corrosion is formed; (2) The lead frame for an optical semiconductor device according to (1), wherein the base is made of a metal or alloy selected from the group consisting of copper, copper alloy, aluminum, and aluminum alloy.
- At least one intermediate layer made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy is formed between the base and the pure silver layer.
- the metal material forming the film is a metal or alloy selected from the group consisting of gold, gold alloy, silver alloy, platinum, platinum alloy, rhodium, rhodium alloy, indium, and indium alloy.
- the lead frame for an optical semiconductor device is any one of (1) to (4), (6)
- the metal material forming the film is a silver alloy selected from the group consisting of a silver-copper alloy, a silver-indium alloy, a silver-rhodium alloy, and a silver-gold alloy
- a lead frame for an optical semiconductor device according to any one of (5), (7)
- Manufacturing method of lead frame for optical semiconductor device, and (8) The method for manufacturing a lead frame for an optical semiconductor device according to any one of (3) to (6), wherein the pure silver layer, the intermediate layer, and the film are formed by electroplating.
- An optical semiconductor device lead frame manufacturing method is provided.
- the lead frame for optical semiconductor devices of the present invention is an optical semiconductor lead frame on which a pure silver layer is formed, the arithmetic average height Ra on the surface of the pure silver layer is in the range of 0.001 to 0.2 ⁇ m, and On the surface layer, a metal layer having excellent corrosion resistance is formed with a thickness (average film thickness) of 0.001 ⁇ m or more and 0.2 ⁇ m or less, thereby taking advantage of silver's excellent reflection characteristics (particularly corrosion resistance against sulfide corrosion). And can prevent migration.
- the manufacturing method of the present invention is suitable as a lead frame for optical semiconductor devices used for LEDs, photocouplers, photointerrupters, etc., and has excellent reflection characteristics from 300 nm in the ultraviolet region to 800 nm in the near infrared region. Furthermore, it is possible to manufacture a lead frame having excellent heat dissipation, corrosion resistance (particularly corrosion resistance against sulfidation corrosion), and long-term stability of reflectance.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
- FIG. 2 is a schematic enlarged cross-sectional view of a portion where the pure silver layer 2 is formed on the upper layer of the substrate and the coating 3 serving as the outermost layer is formed on the upper layer.
- FIG. 3 is a schematic cross-sectional view of another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 4 is a schematic sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 5 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
- FIG. 2 is a schematic enlarged cross-sectional view of a portion where the pure silver layer 2 is formed on the upper layer of the substrate and the coating 3 serving as the outermost layer
- FIG. 6 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 7 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 8 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
- FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
- FIG. 1 shows a state in which the optical semiconductor chip 4 is mounted on the lead frame (the same applies to FIGS. 3 to 8 below).
- a pure silver layer 2 made of pure silver is formed on a substrate 1, and a coating 3 made of a metal material having excellent corrosion resistance is formed on the surface layer of the pure silver layer 2.
- the arithmetic average height Ra of the pure silver layer 2 is 0.001 to 0.2 ⁇ m
- the thickness of the coating 3 is 0.001 ⁇ m to 0.2 ⁇ m.
- the lead frame of the present invention is an optical semiconductor device lead frame that is excellent in reflection characteristics in the visible light region and excellent in corrosion resistance (particularly corrosion resistance against sulfidation corrosion) and migration resistance.
- copper or a copper alloy, aluminum or an aluminum alloy, iron or an iron alloy, or the like can be used as the substrate 1, and preferably a metal or an alloy selected from the group consisting of copper, a copper alloy, aluminum, and an aluminum alloy. is there.
- a metal or an alloy selected from the group consisting of copper, a copper alloy, aluminum, and an aluminum alloy. is there.
- the substrate 1 copper or copper alloy, aluminum or aluminum alloy, it is easy to form a film, and a lead frame that can contribute to cost reduction can be provided.
- these lead frames have excellent heat dissipation characteristics due to good heat transfer coefficient, which is a characteristic related to good conductivity, and heat energy generated when the light emitter emits light is transmitted through the lead frame.
- the light emitting element can be emitted to the outside smoothly, and the lifetime of the light emitting element can be extended and the reflection characteristics can be stabilized over a long period of time.
- “good reflection characteristics” means that the reflectance is 30% or more at a wavelength of 300 to 400 nm and 70% or more at a wavelength of 400 to 800 nm.
- the thickness of the pure silver layer 2 is preferably 0.2 to 5.0 ⁇ m, more preferably 0.5 to 4.0 ⁇ m, and more preferably 1.0 to 3.0 ⁇ m. If the thickness of the pure silver layer is too thin, the thickness that contributes to the reflectance may not be sufficient. On the other hand, if the thickness is too thick, the effect is saturated and the cost increases. By setting the coating thickness of the pure silver layer 2 within the above range, the pure silver layer 2 can be manufactured at low cost without using more noble metal than necessary.
- the concentration (purity) of silver forming the pure silver layer is preferably 95% by mass or more, and more preferably 98% by mass or more.
- FIG. 2 is a schematic enlarged cross-sectional view of a portion where the pure silver layer 2 is formed on the upper layer of the substrate 1 and the film 3 serving as the outermost layer is formed on the upper layer.
- the surface of the pure silver layer 2 has an uneven shape, and the arithmetic average height Ra, which is an index indicating the roughness of the surface, is preferably 0.001 to 0.2 ⁇ m, more preferably 0. 0.01 to 0.15 ⁇ m, more preferably 0.05 to 0.15 ⁇ m.
- the arithmetic average height Ra is a value measured according to the Japanese Industrial Standard (JIS) surface roughness-definition and display (B0601-2001).
- the coating 3 made of a metal material having excellent corrosion resistance (particularly corrosion resistance against sulfidation corrosion) formed on the outermost layer can be densely formed. For this reason, since there exists an effect which prevents that the pinhole and non-coating part which are easy to generate
- Ra is too large, the unevenness of the surface layer tends to cause problems in the subsequent chip mounting process and bonding process, and the surface layer of the pure silver layer 2 is stably and uniformly covered with the film 3 as the outermost layer.
- the possibility of forming an exposed portion of the pure silver layer 2 increases.
- the pure silver layer 2 is discolored by sulfur mainly due to the sulfur component, and the reflectance is lowered.
- the Ra control method can be appropriately adjusted depending on the additive to the pure silver plating solution and the current density during plating.
- the long-term reliability of the silver of the pure silver layer 2 is ensured by forming the coating 3 made of a metal material capable of preventing discoloration (corrosion) due to sulfuration of the pure silver layer 2 on the outermost layer on the substrate 1.
- the thickness of the coating 3 (average film thickness: arithmetic average value of thicknesses measured at any 10 points of the coating) is set to 0.001 ⁇ m or more and 0.2 ⁇ m or less. If the thickness of the outermost layer is too thin, a sufficient corrosion resistance effect cannot be obtained, and conversely, if the thickness is too thick, the reflectance of silver will not be able to make use of the reflectance that contributes to reflection, so the reflectance will drop rapidly over the entire area. End up.
- the reflectivity starts to substantially decrease when the average film thickness of the coating 3 is thicker than about 0.1 ⁇ m in consideration of the influence of the arithmetic average height, but if the thickness is up to 0.2 ⁇ m.
- the thickness is such that the reflectivity of silver in the lower layer (pure silver layer 2) can be fully utilized, and when covered with a thickness exceeding 0.2 ⁇ m, it behaves like a critical point where the reflectivity rapidly decreases. For this reason, in the present invention, it is more important to coat densely and uniformly with a coating thickness of 0.001 to 0.2 ⁇ m.
- the thickness of the film 3 is preferably 0.005 to 0.1 ⁇ m, and more preferably 0.005 to 0.05 ⁇ m, in order to keep the reflectance by the pure silver layer 2 in a high state.
- the film made of a metal material having excellent corrosion resistance as the outermost layer is preferably a layer made of a metal material having corrosion resistance that hardly reacts with sulfur, carbon, oxygen, etc., and does not easily cause discoloration.
- a metal material having corrosion resistance that hardly reacts with sulfur, carbon, oxygen, etc., and does not easily cause discoloration.
- Metal materials selected from the group consisting of indium and indium alloys, metals or alloys selected from the group consisting of gold, gold alloys, silver alloys, platinum, platinum alloys, rhodium, rhodium alloys, indium, and indium alloys Is more preferably used.
- the silver alloy may be a silver-tin alloy, a silver-copper alloy, a silver-indium alloy, a silver-rhodium alloy, silver -Ruthenium alloy, silver-gold alloy, silver-palladium alloy, silver-nickel alloy, etc. are preferable, and further selected from the group consisting of silver-copper alloy, silver-indium alloy, silver-rhodium alloy, and silver-gold alloy Particularly preferred is a silver alloy. It is a silver alloy that can more effectively utilize the reflectance of silver, and can be manufactured at a relatively low cost. In particular, the alloy is relatively easy to form, has a high antirust effect, and good reflection characteristics.
- the number of layers is not specified.
- the Au layer may be 0.005 ⁇ m
- the Pt layer may be 0.005 ⁇ m on the Au layer.
- it is preferably within 2 layers.
- the lead frame of the present invention has an optical semiconductor chip 4 mounted thereon, suitably connected to external wiring so that electric power is supplied to the optical semiconductor 4 from the outside, and the optical semiconductor chip 4 and its periphery are molded with a resin.
- a semiconductor device is formed.
- the formation place of the film 3 needs to be formed at least at the place where the optical semiconductor chip 4 is mounted. In other words, it is not necessary to form the coating 3 except where the optical semiconductor chip 4 is mounted. This is because if the coating 3 is formed only on the mounting portion of the optical semiconductor chip 4 and the discoloration of the pure silver layer 2 acting as a reflector can be prevented, the reflection characteristics are not greatly affected.
- the outermost layer may be the pure silver layer 3 at the place where the material is molded.
- the film 3 to be formed may be formed partially, for example, by partial plating such as stripe plating or spot plating.
- Manufacturing a partially formed lead frame can reduce the amount of metal used in unnecessary portions, and therefore can provide an environment-friendly and cost-effective lead frame for optical semiconductors.
- the semiconductor chip 4 any optical semiconductor such as an LED element can be used.
- FIG. 3 is a schematic cross-sectional view of another embodiment of the lead frame for an optical semiconductor device according to the present invention.
- An intermediate layer is provided between the base 1 and the pure silver layer 2 with respect to the lead frame of the embodiment shown in FIG. 5 is formed.
- the intermediate layer 5 is preferably made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy.
- the intermediate layer 5 made of nickel or a nickel alloy, cobalt or a cobalt alloy, copper or a copper alloy between the pure silver layer 2 and the substrate 1, deterioration of the reflection characteristics due to diffusion of the substrate due to heat generation of the light emitting element is prevented, Reflective properties are more reliable over time.
- the thickness of the intermediate layer 5 is not particularly limited, but is preferably 0.2 to 2 ⁇ m, more preferably 0.5 to 1 ⁇ m, considering pressability, cost, productivity, and heat resistance. is there.
- the number of layers is not particularly specified, but is usually one layer in consideration of productivity.
- FIG. 4 is a schematic cross-sectional view of still another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which a coating 3 made of a metal material having excellent corrosion resistance is formed only on a portion where the optical semiconductor chip 4 is mounted. It shows how it is done.
- FIG. 5 is a schematic cross-sectional view of still another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which a coating 3 made of a metal material having excellent corrosion resistance is formed only on a portion where the optical semiconductor chip 4 is mounted. Further, an intermediate layer 5 is formed.
- FIG. 6 is a schematic cross-sectional view of a lead frame for an optical semiconductor device similar to the embodiment shown in FIG. 3, and the optical semiconductor chip 4 is mounted on both sides of the lead frame. As in this aspect, it is possible to configure an optical semiconductor device using both sides as well as one side.
- FIG. 7 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention, in which a recess is provided in the base 1 and the optical semiconductor chip 4 is mounted inside the recess.
- the lead frame for optical semiconductor devices of the present invention can naturally be applied to a lead frame shape in which concave portions are provided to improve the light collecting property.
- FIG. 8 is an example of a cross-sectional view of a lead frame for an optical semiconductor device according to the present invention. Is formed. As described above, the outermost layer is applied only to the portion that contributes to the reflection of the light emitted from the optical semiconductor, so that it can be appropriately used to improve the corrosion resistance of only the reflective portion.
- any method can be used to manufacture the lead frame for an optical semiconductor device, but the pure silver layer 2, the coating 3 made of a metal material excellent in corrosion resistance, and the intermediate layer 5 are preferably formed by electroplating.
- the thickness can be easily adjusted and the cost is lower than the cladding method and the sputtering method.
- underlayer has the same meaning as the “intermediate layer”.
- Example 1 The substrate shown in Table 1 having a thickness of 0.3 mm and a width of 50 mm was subjected to the following pretreatment, and then subjected to the following electroplating treatment to provide Examples 1 to 39 of the present invention having the constitution shown in Table 1, Conventional Example 1 and Comparative Example 1, 2 lead frames were obtained.
- the layer structure of each lead frame was formed in the order of the substrate, the pure silver layer, and the outermost layer film in the inventive examples 1 to 6, and the conventional example 1 was formed in the order of the substrate, the base layer, and the pure silver layer.
- the substrate, the underlayer, the pure silver layer, and the outermost layer film were formed in this order.
- the pure silver layer was formed with a thickness of 1 ⁇ m in all examples under the following Ag plating conditions.
- C11000”, “C26800”, “C52100”, “C77000”, and “C19400” represent a copper or copper alloy substrate, and the numerical value after C is CDA (Copper Development). (Association) standard.
- “EFTEC-3” is a copper alloy manufactured by Furukawa Electric Co., Ltd., and is a copper alloy indicated by “C14410” in the CDA standard.
- “A1100”, “A2014”, “A3003”, and “A5052” represent an aluminum or aluminum alloy substrate, and the numerical value after A indicates the type according to JIS.
- SUS304” and “42 alloy” represent an iron alloy substrate, “SUS304” represents a stainless steel of this kind according to JIS regulations, and “42 alloy” represents a 42% Ni-containing iron alloy.
- the pretreatment among the substrates, the copper substrate, the copper alloy substrate, and the iron alloy substrate were subjected to the following electrolytic degreasing and then the following pickling.
- the aluminum substrate and aluminum alloy substrate were subjected to the following electrolytic degreasing, then the following pickling, and then the following zinc substitution.
- silver strike plating was performed with a thickness of 0.01 ⁇ m.
- Pretreatment conditions [Electrolytic degreasing] Degreasing solution: NaOH 60 g / liter Degreasing conditions: 2.5 A / dm 2 , temperature 60 ° C., degreasing time 60 seconds [pickling] Pickling solution: 10% sulfuric acid pickling condition: 30 seconds immersion, room temperature [zinc replacement] Used when the substrate is aluminum Zinc replacement solution: NaOH 500 g / liter, ZnO 100 g / liter, tartaric acid (C 4 H 6 O 6 ) 10 g / Liter, FeCl 2 2 g / liter Treatment conditions: 30 seconds immersion, room temperature [Ag strike plating] coating thickness 0.01 ⁇ m Plating solution: KAg (CN) 2 5 g / liter, KCN 60 g / liter, Plating conditions: current density 2 A / dm 2 , plating time 4 seconds, temperature 25 ° C.
- the plating solution composition and plating conditions for each plating used are shown below.
- [Ag plating] Coating thickness 1.0 ⁇ m Plating solution: AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter Plating condition: current density 1 A / dm 2 , temperature 30 ° C., treatment time 96 seconds
- [Ni plating] Plating solution: Ni (SO 3 NH 2) 2 ⁇ 4H 2 O 500g / l, NiCl 2 30 g / l, H 3 BO 3 30g / l Plating Conditions: current density 5A / dm 2, temperature 50 ° C.
- Plating solution Co (SO 3 NH 2) 2 ⁇ 4H 2 O 500g / l, CoCl 2 30 g / l, H 3 BO 3 30g / l Plating Conditions: current density 5A / dm 2, temperature 50 ° C.
- Plating solution CuSO 4 .5H 2 O 250 g / liter, H 2 SO 4 50 g / liter, NaCl 0.1 g / liter Plating condition: current density 6 A / dm 2 , temperature 40 ° C.
- Plating solution InCl 3 45 g / liter, KCN 150 g / liter, KOH 35 g / liter, dextrin 35 g / liter Plating conditions: current density 2 A / dm 2 , temperature 20 ° C.
- Plating solution KAu (CN) 2 14.6 g / liter, C 6 H 8 O 7 150 g / liter, K 2 C 6 H 4 O 7 180 g / liter Plating condition: current density 1 A / dm 2 , temperature 40 ° C.
- Au-0.3% Co Plating solution KAu (CN) 2 14.6 g / liter, C 6 H 8 O 7 150 g / liter, K 2 C 6 H 4 O 7 180 g / liter, EDTA-Co (II) 3 g / liter, piperazine 2 g / liter Plating conditions: current density 1 A / dm 2 , temperature 40 ° C.
- Plating solution Pt (NO 2 ) 2 (NH 3 ) 2 10 g / liter, NaNO 2 10 g / liter, NH 4 NO 3 100 g / liter, NH 3 50 ml / liter Plating conditions: current density 5 A / dm 2 , temperature 90 °C [Rh plating] Plating solution: RHODEX (trade name, manufactured by Nippon Electroplating Engineers Co., Ltd.) Plating conditions: 1.3 A / dm 2 , temperature 50 ° C.
- Plating solution SnSO 4 80 g / liter, H 2 SO 4 80 g / liter Plating condition: current density 2 A / dm 2 , temperature 30 ° C.
- Ni-P alloy plating Ni-3% P Plating solution: NiSO 4 20 g / liter, NaH 2 PO 2 25 g / liter, C 3 H 6 O 3 25 g / liter, C 3 H 6 O 2 3 g / liter Plating condition: electroless plating, temperature 90 ° C.
- Ni Plating solution Pd (NH 3 ) 2 Cl 2 40 g / liter, NiSO 4 45 g / liter, NH 4 OH 90 ml / liter, (NH 4 ) 2 SO 4 50 g / liter Plating condition: current density 1 A / dm 2 , temperature 30 ° C
- Pd Plating solution KAg [CN] 2 20 g / liter, PdCl 2 25 g / liter, K 4 O 7 P 2 60 g / liter, KSCN 150 g / liter Plating condition: current density 0.5 A / dm 2 , temperature 40 ° C.
- the obtained lead frames of the present invention example, comparative example, and conventional example were evaluated according to the following tests and standards.
- the base layer thickness and the outermost layer thickness shown in Table 1 are thicknesses as average values (arithmetic average of arbitrary 10 measured values).
- a pure silver layer is provided on copper or copper alloy, aluminum or aluminum alloy, and the thickness range defined in the present invention is a film made of a metal material having excellent corrosion resistance on the upper layer.
- the reflection characteristics, particularly the reflectance at 300 nm improved from a few percent level to a few tens percent level in conventional silver. This can be applied to optical semiconductors using these wavelengths by improving the reflectivity in the ultraviolet region.
- the outermost layer is too thick, the light cannot reach the pure silver layer and the optical properties of the outermost layer are strengthened.
- Example 2 On a copper alloy made of C19400 having a thickness of 0.15 mm and a width of 30 mm, a nickel plating layer is formed as a base layer with a thickness of 1.0 ⁇ m, a pure silver layer is formed as an upper layer, and a Pt plating layer is formed as a top layer with a thickness shown in Table 3.
- the lead frames of Examples 40 to 63 of the present invention and Comparative Examples 3 to 7 were obtained. Each plating procedure and liquid composition were the same as those in Example 1, and bright silver plating and matte silver plating were used for forming the pure silver layer.
- the current density was adjusted under conditions of 0.1 to 10 A / dm 2 in bright silver plating and matte silver plating. Further, the Ra of the pure silver layer was measured by a contact type surface roughness meter (Surfcoder SE-30H (trade name): manufactured by Kosaka Laboratory) in the same manner as in Example 1.
- Plating solution AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter, Na 2 S 2 O 3 5 g / liter Plating condition: current density 2 to 10 A / dm 2 , temperature 30 ° C.
- Measurement Ag plating Plating solution: AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter Plating condition: current density 0.1 to 5 A / dm 2 , temperature 30 ° C.
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- Lead Frames For Integrated Circuits (AREA)
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CN200980151171.1A CN102257647B (zh) | 2008-12-19 | 2009-12-17 | 光半导体装置用引线框及其制造方法 |
KR1020117016384A KR101267718B1 (ko) | 2008-12-19 | 2009-12-17 | 광반도체 장치용 리드 프레임 및 그 제조방법 |
JP2010543004A JP4763094B2 (ja) | 2008-12-19 | 2009-12-17 | 光半導体装置用リードフレーム及びその製造方法 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006269667A (ja) * | 2005-03-23 | 2006-10-05 | Sumitomo Electric Ind Ltd | 光反射膜およびそれを用いた発光ダイオード用パッケージ |
JP2006303069A (ja) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用パッケージ |
JP2008091818A (ja) * | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法 |
JP2008192635A (ja) * | 2007-01-31 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 光半導体装置、リードフレームおよび光半導体装置の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101059361B1 (ko) * | 2003-01-16 | 2011-08-24 | 파나소닉 주식회사 | 리드 프레임 및 반도체 발광장치 |
JP4172770B2 (ja) * | 2003-03-26 | 2008-10-29 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP4480407B2 (ja) * | 2004-01-29 | 2010-06-16 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
JP5226323B2 (ja) * | 2006-01-19 | 2013-07-03 | 株式会社東芝 | 発光モジュールとそれを用いたバックライトおよび液晶表示装置 |
-
2009
- 2009-12-17 CN CN200980151171.1A patent/CN102257647B/zh not_active Expired - Fee Related
- 2009-12-17 JP JP2010543004A patent/JP4763094B2/ja not_active Expired - Fee Related
- 2009-12-17 WO PCT/JP2009/071064 patent/WO2010071182A1/ja active Application Filing
- 2009-12-17 KR KR1020117016384A patent/KR101267718B1/ko active IP Right Grant
- 2009-12-18 TW TW098143567A patent/TWI465614B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006269667A (ja) * | 2005-03-23 | 2006-10-05 | Sumitomo Electric Ind Ltd | 光反射膜およびそれを用いた発光ダイオード用パッケージ |
JP2006303069A (ja) * | 2005-04-19 | 2006-11-02 | Sumitomo Metal Electronics Devices Inc | 発光素子搭載用パッケージ |
JP2008091818A (ja) * | 2006-10-05 | 2008-04-17 | Matsushita Electric Ind Co Ltd | 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法 |
JP2008192635A (ja) * | 2007-01-31 | 2008-08-21 | Matsushita Electric Ind Co Ltd | 光半導体装置、リードフレームおよび光半導体装置の製造方法 |
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CN102257647A (zh) | 2011-11-23 |
KR101267718B1 (ko) | 2013-05-24 |
JP4763094B2 (ja) | 2011-08-31 |
TWI465614B (zh) | 2014-12-21 |
KR20110100281A (ko) | 2011-09-09 |
JPWO2010071182A1 (ja) | 2012-05-31 |
TW201030191A (en) | 2010-08-16 |
CN102257647B (zh) | 2014-07-23 |
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