WO2010071182A1 - Grille de connexion de dispositif à semi-conducteur optique et son procédé de fabrication - Google Patents

Grille de connexion de dispositif à semi-conducteur optique et son procédé de fabrication Download PDF

Info

Publication number
WO2010071182A1
WO2010071182A1 PCT/JP2009/071064 JP2009071064W WO2010071182A1 WO 2010071182 A1 WO2010071182 A1 WO 2010071182A1 JP 2009071064 W JP2009071064 W JP 2009071064W WO 2010071182 A1 WO2010071182 A1 WO 2010071182A1
Authority
WO
WIPO (PCT)
Prior art keywords
alloy
lead frame
optical semiconductor
semiconductor device
layer
Prior art date
Application number
PCT/JP2009/071064
Other languages
English (en)
Japanese (ja)
Inventor
良聡 小林
和宏 小関
伸 菊池
Original Assignee
古河電気工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 古河電気工業株式会社 filed Critical 古河電気工業株式会社
Priority to CN200980151171.1A priority Critical patent/CN102257647B/zh
Priority to KR1020117016384A priority patent/KR101267718B1/ko
Priority to JP2010543004A priority patent/JP4763094B2/ja
Publication of WO2010071182A1 publication Critical patent/WO2010071182A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a lead frame for an optical semiconductor device and a manufacturing method thereof.
  • Lead frames for optical semiconductor devices have been widely used as various display / illumination light sources that use LED elements or the like as light sources.
  • a lead frame is arranged on a substrate, and after mounting a light emitting element on the lead frame, the light source is prevented in order to prevent deterioration of the light source due to heat, moisture, oxidation, and the surrounding portion. And its periphery is sealed with a sealing resin.
  • Patent Document 1 a silver or silver alloy layer having excellent light reflection characteristics is often formed immediately below the light source.
  • a silver plating layer may be formed near the reflector.
  • Patent Document 2 discloses that the reflection characteristics are improved by setting the crystal grain size of silver or a silver alloy film to 0.5 ⁇ m to 30 ⁇ m. Further, Patent Document 2 proposes a method of manufacturing a silver film having the above crystal grain size by performing a heat treatment at 200 ° C. or more for 30 seconds or more after the silver film is formed.
  • Patent Document 3 a method of forming 0.005 to 0.15 ⁇ m of palladium on a nickel underlayer and 0.003 to 0.05 ⁇ m of rhodium on the outermost layer is disclosed. ing.
  • Patent Document 2 describes that the surface roughness of the surface material of the surface layer silver film is such that the maximum height Ry is 0.5 ⁇ m or more. The roughness in the vicinity of the outermost layer affects not the roughness. For this reason, a silver film is formed on the substrate or the base plating by plating or vapor deposition that constitutes the reflective layer, and thus it may not make sense to define the roughness of the base.
  • Ry means the difference between the maximum value and the minimum value of roughness, and it is highly likely to mean the numerical value of minute portions such as irregularities only on a specific part of the surface, for example, a line-shaped scratch. Since it does not indicate the roughness of the entire range depending on reflection, it may not be suitable as a parameter indicating the characteristics of the reflective layer.
  • the lead frame produced based on the technique described in these documents was used for an LED, the luminance was lowered over time.
  • the encapsulated resin contained a small amount of sulfur component, which caused the silver to turn black and reduce the luminance due to sulfuration of silver on the surface of the lead frame. Also, migration is likely to occur in pure silver.
  • the reflection characteristics important for optical semiconductor devices are reduced by 20% or more in the case of rhodium, for example, with a reflectance of 400 to 800 nm including particularly important visible light region. Therefore, simply by thinly coating rhodium, the required characteristics of reflectance cannot be satisfied for blue or white optical semiconductor devices.
  • the present invention is a lead frame having good reflection characteristics from 300 nm in the ultraviolet region to 800 nm in the near infrared region, and further has heat dissipation, corrosion resistance (particularly corrosion resistance against sulfidation corrosion), and long-term stability of reflectance.
  • the metal layer has a thickness of 0.2 ⁇ m or less, the reflectance of light in the wavelength range from the ultraviolet region to the near infrared region is more or less affected by the underlying metal. I understood it.
  • the corrosion resistant film does not expose the pure silver layer. It was found that it can be formed.
  • a lead frame for an optical semiconductor device in which a pure silver layer made of pure silver is formed on a substrate, the arithmetic average height Ra of the pure silver layer being 0.001 to 0.2 ⁇ m, and its surface
  • a metal layer with excellent corrosion resistance of 0.001 to 0.2 ⁇ m long-term stability of reflectivity by maintaining the high reflectivity characteristics of the pure silver layer and excellent corrosion resistance against sulfidation corrosion
  • the present invention (1) A lead frame for an optical semiconductor device in which a pure silver layer made of pure silver is formed on a substrate, the arithmetic average height Ra of the pure silver layer being 0.001 to 0.2 ⁇ m, and on the surface thereof A lead frame for an optical semiconductor device, wherein a film having an average film thickness of 0.001 ⁇ m or more and 0.2 ⁇ m or less made of a metal material excellent in corrosion resistance against sulfidation corrosion is formed; (2) The lead frame for an optical semiconductor device according to (1), wherein the base is made of a metal or alloy selected from the group consisting of copper, copper alloy, aluminum, and aluminum alloy.
  • At least one intermediate layer made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy is formed between the base and the pure silver layer.
  • the metal material forming the film is a metal or alloy selected from the group consisting of gold, gold alloy, silver alloy, platinum, platinum alloy, rhodium, rhodium alloy, indium, and indium alloy.
  • the lead frame for an optical semiconductor device is any one of (1) to (4), (6)
  • the metal material forming the film is a silver alloy selected from the group consisting of a silver-copper alloy, a silver-indium alloy, a silver-rhodium alloy, and a silver-gold alloy
  • a lead frame for an optical semiconductor device according to any one of (5), (7)
  • Manufacturing method of lead frame for optical semiconductor device, and (8) The method for manufacturing a lead frame for an optical semiconductor device according to any one of (3) to (6), wherein the pure silver layer, the intermediate layer, and the film are formed by electroplating.
  • An optical semiconductor device lead frame manufacturing method is provided.
  • the lead frame for optical semiconductor devices of the present invention is an optical semiconductor lead frame on which a pure silver layer is formed, the arithmetic average height Ra on the surface of the pure silver layer is in the range of 0.001 to 0.2 ⁇ m, and On the surface layer, a metal layer having excellent corrosion resistance is formed with a thickness (average film thickness) of 0.001 ⁇ m or more and 0.2 ⁇ m or less, thereby taking advantage of silver's excellent reflection characteristics (particularly corrosion resistance against sulfide corrosion). And can prevent migration.
  • the manufacturing method of the present invention is suitable as a lead frame for optical semiconductor devices used for LEDs, photocouplers, photointerrupters, etc., and has excellent reflection characteristics from 300 nm in the ultraviolet region to 800 nm in the near infrared region. Furthermore, it is possible to manufacture a lead frame having excellent heat dissipation, corrosion resistance (particularly corrosion resistance against sulfidation corrosion), and long-term stability of reflectance.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
  • FIG. 2 is a schematic enlarged cross-sectional view of a portion where the pure silver layer 2 is formed on the upper layer of the substrate and the coating 3 serving as the outermost layer is formed on the upper layer.
  • FIG. 3 is a schematic cross-sectional view of another embodiment of the lead frame for optical semiconductor devices according to the present invention.
  • FIG. 4 is a schematic sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
  • FIG. 5 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
  • FIG. 2 is a schematic enlarged cross-sectional view of a portion where the pure silver layer 2 is formed on the upper layer of the substrate and the coating 3 serving as the outermost layer
  • FIG. 6 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
  • FIG. 7 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
  • FIG. 8 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention.
  • FIG. 1 is a schematic cross-sectional view of one embodiment of a lead frame for an optical semiconductor device according to the present invention.
  • FIG. 1 shows a state in which the optical semiconductor chip 4 is mounted on the lead frame (the same applies to FIGS. 3 to 8 below).
  • a pure silver layer 2 made of pure silver is formed on a substrate 1, and a coating 3 made of a metal material having excellent corrosion resistance is formed on the surface layer of the pure silver layer 2.
  • the arithmetic average height Ra of the pure silver layer 2 is 0.001 to 0.2 ⁇ m
  • the thickness of the coating 3 is 0.001 ⁇ m to 0.2 ⁇ m.
  • the lead frame of the present invention is an optical semiconductor device lead frame that is excellent in reflection characteristics in the visible light region and excellent in corrosion resistance (particularly corrosion resistance against sulfidation corrosion) and migration resistance.
  • copper or a copper alloy, aluminum or an aluminum alloy, iron or an iron alloy, or the like can be used as the substrate 1, and preferably a metal or an alloy selected from the group consisting of copper, a copper alloy, aluminum, and an aluminum alloy. is there.
  • a metal or an alloy selected from the group consisting of copper, a copper alloy, aluminum, and an aluminum alloy. is there.
  • the substrate 1 copper or copper alloy, aluminum or aluminum alloy, it is easy to form a film, and a lead frame that can contribute to cost reduction can be provided.
  • these lead frames have excellent heat dissipation characteristics due to good heat transfer coefficient, which is a characteristic related to good conductivity, and heat energy generated when the light emitter emits light is transmitted through the lead frame.
  • the light emitting element can be emitted to the outside smoothly, and the lifetime of the light emitting element can be extended and the reflection characteristics can be stabilized over a long period of time.
  • “good reflection characteristics” means that the reflectance is 30% or more at a wavelength of 300 to 400 nm and 70% or more at a wavelength of 400 to 800 nm.
  • the thickness of the pure silver layer 2 is preferably 0.2 to 5.0 ⁇ m, more preferably 0.5 to 4.0 ⁇ m, and more preferably 1.0 to 3.0 ⁇ m. If the thickness of the pure silver layer is too thin, the thickness that contributes to the reflectance may not be sufficient. On the other hand, if the thickness is too thick, the effect is saturated and the cost increases. By setting the coating thickness of the pure silver layer 2 within the above range, the pure silver layer 2 can be manufactured at low cost without using more noble metal than necessary.
  • the concentration (purity) of silver forming the pure silver layer is preferably 95% by mass or more, and more preferably 98% by mass or more.
  • FIG. 2 is a schematic enlarged cross-sectional view of a portion where the pure silver layer 2 is formed on the upper layer of the substrate 1 and the film 3 serving as the outermost layer is formed on the upper layer.
  • the surface of the pure silver layer 2 has an uneven shape, and the arithmetic average height Ra, which is an index indicating the roughness of the surface, is preferably 0.001 to 0.2 ⁇ m, more preferably 0. 0.01 to 0.15 ⁇ m, more preferably 0.05 to 0.15 ⁇ m.
  • the arithmetic average height Ra is a value measured according to the Japanese Industrial Standard (JIS) surface roughness-definition and display (B0601-2001).
  • the coating 3 made of a metal material having excellent corrosion resistance (particularly corrosion resistance against sulfidation corrosion) formed on the outermost layer can be densely formed. For this reason, since there exists an effect which prevents that the pinhole and non-coating part which are easy to generate
  • Ra is too large, the unevenness of the surface layer tends to cause problems in the subsequent chip mounting process and bonding process, and the surface layer of the pure silver layer 2 is stably and uniformly covered with the film 3 as the outermost layer.
  • the possibility of forming an exposed portion of the pure silver layer 2 increases.
  • the pure silver layer 2 is discolored by sulfur mainly due to the sulfur component, and the reflectance is lowered.
  • the Ra control method can be appropriately adjusted depending on the additive to the pure silver plating solution and the current density during plating.
  • the long-term reliability of the silver of the pure silver layer 2 is ensured by forming the coating 3 made of a metal material capable of preventing discoloration (corrosion) due to sulfuration of the pure silver layer 2 on the outermost layer on the substrate 1.
  • the thickness of the coating 3 (average film thickness: arithmetic average value of thicknesses measured at any 10 points of the coating) is set to 0.001 ⁇ m or more and 0.2 ⁇ m or less. If the thickness of the outermost layer is too thin, a sufficient corrosion resistance effect cannot be obtained, and conversely, if the thickness is too thick, the reflectance of silver will not be able to make use of the reflectance that contributes to reflection, so the reflectance will drop rapidly over the entire area. End up.
  • the reflectivity starts to substantially decrease when the average film thickness of the coating 3 is thicker than about 0.1 ⁇ m in consideration of the influence of the arithmetic average height, but if the thickness is up to 0.2 ⁇ m.
  • the thickness is such that the reflectivity of silver in the lower layer (pure silver layer 2) can be fully utilized, and when covered with a thickness exceeding 0.2 ⁇ m, it behaves like a critical point where the reflectivity rapidly decreases. For this reason, in the present invention, it is more important to coat densely and uniformly with a coating thickness of 0.001 to 0.2 ⁇ m.
  • the thickness of the film 3 is preferably 0.005 to 0.1 ⁇ m, and more preferably 0.005 to 0.05 ⁇ m, in order to keep the reflectance by the pure silver layer 2 in a high state.
  • the film made of a metal material having excellent corrosion resistance as the outermost layer is preferably a layer made of a metal material having corrosion resistance that hardly reacts with sulfur, carbon, oxygen, etc., and does not easily cause discoloration.
  • a metal material having corrosion resistance that hardly reacts with sulfur, carbon, oxygen, etc., and does not easily cause discoloration.
  • Metal materials selected from the group consisting of indium and indium alloys, metals or alloys selected from the group consisting of gold, gold alloys, silver alloys, platinum, platinum alloys, rhodium, rhodium alloys, indium, and indium alloys Is more preferably used.
  • the silver alloy may be a silver-tin alloy, a silver-copper alloy, a silver-indium alloy, a silver-rhodium alloy, silver -Ruthenium alloy, silver-gold alloy, silver-palladium alloy, silver-nickel alloy, etc. are preferable, and further selected from the group consisting of silver-copper alloy, silver-indium alloy, silver-rhodium alloy, and silver-gold alloy Particularly preferred is a silver alloy. It is a silver alloy that can more effectively utilize the reflectance of silver, and can be manufactured at a relatively low cost. In particular, the alloy is relatively easy to form, has a high antirust effect, and good reflection characteristics.
  • the number of layers is not specified.
  • the Au layer may be 0.005 ⁇ m
  • the Pt layer may be 0.005 ⁇ m on the Au layer.
  • it is preferably within 2 layers.
  • the lead frame of the present invention has an optical semiconductor chip 4 mounted thereon, suitably connected to external wiring so that electric power is supplied to the optical semiconductor 4 from the outside, and the optical semiconductor chip 4 and its periphery are molded with a resin.
  • a semiconductor device is formed.
  • the formation place of the film 3 needs to be formed at least at the place where the optical semiconductor chip 4 is mounted. In other words, it is not necessary to form the coating 3 except where the optical semiconductor chip 4 is mounted. This is because if the coating 3 is formed only on the mounting portion of the optical semiconductor chip 4 and the discoloration of the pure silver layer 2 acting as a reflector can be prevented, the reflection characteristics are not greatly affected.
  • the outermost layer may be the pure silver layer 3 at the place where the material is molded.
  • the film 3 to be formed may be formed partially, for example, by partial plating such as stripe plating or spot plating.
  • Manufacturing a partially formed lead frame can reduce the amount of metal used in unnecessary portions, and therefore can provide an environment-friendly and cost-effective lead frame for optical semiconductors.
  • the semiconductor chip 4 any optical semiconductor such as an LED element can be used.
  • FIG. 3 is a schematic cross-sectional view of another embodiment of the lead frame for an optical semiconductor device according to the present invention.
  • An intermediate layer is provided between the base 1 and the pure silver layer 2 with respect to the lead frame of the embodiment shown in FIG. 5 is formed.
  • the intermediate layer 5 is preferably made of a metal or alloy selected from the group consisting of nickel, nickel alloy, cobalt, cobalt alloy, copper, and copper alloy.
  • the intermediate layer 5 made of nickel or a nickel alloy, cobalt or a cobalt alloy, copper or a copper alloy between the pure silver layer 2 and the substrate 1, deterioration of the reflection characteristics due to diffusion of the substrate due to heat generation of the light emitting element is prevented, Reflective properties are more reliable over time.
  • the thickness of the intermediate layer 5 is not particularly limited, but is preferably 0.2 to 2 ⁇ m, more preferably 0.5 to 1 ⁇ m, considering pressability, cost, productivity, and heat resistance. is there.
  • the number of layers is not particularly specified, but is usually one layer in consideration of productivity.
  • FIG. 4 is a schematic cross-sectional view of still another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which a coating 3 made of a metal material having excellent corrosion resistance is formed only on a portion where the optical semiconductor chip 4 is mounted. It shows how it is done.
  • FIG. 5 is a schematic cross-sectional view of still another embodiment of the lead frame for an optical semiconductor device according to the present invention, in which a coating 3 made of a metal material having excellent corrosion resistance is formed only on a portion where the optical semiconductor chip 4 is mounted. Further, an intermediate layer 5 is formed.
  • FIG. 6 is a schematic cross-sectional view of a lead frame for an optical semiconductor device similar to the embodiment shown in FIG. 3, and the optical semiconductor chip 4 is mounted on both sides of the lead frame. As in this aspect, it is possible to configure an optical semiconductor device using both sides as well as one side.
  • FIG. 7 is a schematic cross-sectional view of still another embodiment of the lead frame for optical semiconductor devices according to the present invention, in which a recess is provided in the base 1 and the optical semiconductor chip 4 is mounted inside the recess.
  • the lead frame for optical semiconductor devices of the present invention can naturally be applied to a lead frame shape in which concave portions are provided to improve the light collecting property.
  • FIG. 8 is an example of a cross-sectional view of a lead frame for an optical semiconductor device according to the present invention. Is formed. As described above, the outermost layer is applied only to the portion that contributes to the reflection of the light emitted from the optical semiconductor, so that it can be appropriately used to improve the corrosion resistance of only the reflective portion.
  • any method can be used to manufacture the lead frame for an optical semiconductor device, but the pure silver layer 2, the coating 3 made of a metal material excellent in corrosion resistance, and the intermediate layer 5 are preferably formed by electroplating.
  • the thickness can be easily adjusted and the cost is lower than the cladding method and the sputtering method.
  • underlayer has the same meaning as the “intermediate layer”.
  • Example 1 The substrate shown in Table 1 having a thickness of 0.3 mm and a width of 50 mm was subjected to the following pretreatment, and then subjected to the following electroplating treatment to provide Examples 1 to 39 of the present invention having the constitution shown in Table 1, Conventional Example 1 and Comparative Example 1, 2 lead frames were obtained.
  • the layer structure of each lead frame was formed in the order of the substrate, the pure silver layer, and the outermost layer film in the inventive examples 1 to 6, and the conventional example 1 was formed in the order of the substrate, the base layer, and the pure silver layer.
  • the substrate, the underlayer, the pure silver layer, and the outermost layer film were formed in this order.
  • the pure silver layer was formed with a thickness of 1 ⁇ m in all examples under the following Ag plating conditions.
  • C11000”, “C26800”, “C52100”, “C77000”, and “C19400” represent a copper or copper alloy substrate, and the numerical value after C is CDA (Copper Development). (Association) standard.
  • “EFTEC-3” is a copper alloy manufactured by Furukawa Electric Co., Ltd., and is a copper alloy indicated by “C14410” in the CDA standard.
  • “A1100”, “A2014”, “A3003”, and “A5052” represent an aluminum or aluminum alloy substrate, and the numerical value after A indicates the type according to JIS.
  • SUS304” and “42 alloy” represent an iron alloy substrate, “SUS304” represents a stainless steel of this kind according to JIS regulations, and “42 alloy” represents a 42% Ni-containing iron alloy.
  • the pretreatment among the substrates, the copper substrate, the copper alloy substrate, and the iron alloy substrate were subjected to the following electrolytic degreasing and then the following pickling.
  • the aluminum substrate and aluminum alloy substrate were subjected to the following electrolytic degreasing, then the following pickling, and then the following zinc substitution.
  • silver strike plating was performed with a thickness of 0.01 ⁇ m.
  • Pretreatment conditions [Electrolytic degreasing] Degreasing solution: NaOH 60 g / liter Degreasing conditions: 2.5 A / dm 2 , temperature 60 ° C., degreasing time 60 seconds [pickling] Pickling solution: 10% sulfuric acid pickling condition: 30 seconds immersion, room temperature [zinc replacement] Used when the substrate is aluminum Zinc replacement solution: NaOH 500 g / liter, ZnO 100 g / liter, tartaric acid (C 4 H 6 O 6 ) 10 g / Liter, FeCl 2 2 g / liter Treatment conditions: 30 seconds immersion, room temperature [Ag strike plating] coating thickness 0.01 ⁇ m Plating solution: KAg (CN) 2 5 g / liter, KCN 60 g / liter, Plating conditions: current density 2 A / dm 2 , plating time 4 seconds, temperature 25 ° C.
  • the plating solution composition and plating conditions for each plating used are shown below.
  • [Ag plating] Coating thickness 1.0 ⁇ m Plating solution: AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter Plating condition: current density 1 A / dm 2 , temperature 30 ° C., treatment time 96 seconds
  • [Ni plating] Plating solution: Ni (SO 3 NH 2) 2 ⁇ 4H 2 O 500g / l, NiCl 2 30 g / l, H 3 BO 3 30g / l Plating Conditions: current density 5A / dm 2, temperature 50 ° C.
  • Plating solution Co (SO 3 NH 2) 2 ⁇ 4H 2 O 500g / l, CoCl 2 30 g / l, H 3 BO 3 30g / l Plating Conditions: current density 5A / dm 2, temperature 50 ° C.
  • Plating solution CuSO 4 .5H 2 O 250 g / liter, H 2 SO 4 50 g / liter, NaCl 0.1 g / liter Plating condition: current density 6 A / dm 2 , temperature 40 ° C.
  • Plating solution InCl 3 45 g / liter, KCN 150 g / liter, KOH 35 g / liter, dextrin 35 g / liter Plating conditions: current density 2 A / dm 2 , temperature 20 ° C.
  • Plating solution KAu (CN) 2 14.6 g / liter, C 6 H 8 O 7 150 g / liter, K 2 C 6 H 4 O 7 180 g / liter Plating condition: current density 1 A / dm 2 , temperature 40 ° C.
  • Au-0.3% Co Plating solution KAu (CN) 2 14.6 g / liter, C 6 H 8 O 7 150 g / liter, K 2 C 6 H 4 O 7 180 g / liter, EDTA-Co (II) 3 g / liter, piperazine 2 g / liter Plating conditions: current density 1 A / dm 2 , temperature 40 ° C.
  • Plating solution Pt (NO 2 ) 2 (NH 3 ) 2 10 g / liter, NaNO 2 10 g / liter, NH 4 NO 3 100 g / liter, NH 3 50 ml / liter Plating conditions: current density 5 A / dm 2 , temperature 90 °C [Rh plating] Plating solution: RHODEX (trade name, manufactured by Nippon Electroplating Engineers Co., Ltd.) Plating conditions: 1.3 A / dm 2 , temperature 50 ° C.
  • Plating solution SnSO 4 80 g / liter, H 2 SO 4 80 g / liter Plating condition: current density 2 A / dm 2 , temperature 30 ° C.
  • Ni-P alloy plating Ni-3% P Plating solution: NiSO 4 20 g / liter, NaH 2 PO 2 25 g / liter, C 3 H 6 O 3 25 g / liter, C 3 H 6 O 2 3 g / liter Plating condition: electroless plating, temperature 90 ° C.
  • Ni Plating solution Pd (NH 3 ) 2 Cl 2 40 g / liter, NiSO 4 45 g / liter, NH 4 OH 90 ml / liter, (NH 4 ) 2 SO 4 50 g / liter Plating condition: current density 1 A / dm 2 , temperature 30 ° C
  • Pd Plating solution KAg [CN] 2 20 g / liter, PdCl 2 25 g / liter, K 4 O 7 P 2 60 g / liter, KSCN 150 g / liter Plating condition: current density 0.5 A / dm 2 , temperature 40 ° C.
  • the obtained lead frames of the present invention example, comparative example, and conventional example were evaluated according to the following tests and standards.
  • the base layer thickness and the outermost layer thickness shown in Table 1 are thicknesses as average values (arithmetic average of arbitrary 10 measured values).
  • a pure silver layer is provided on copper or copper alloy, aluminum or aluminum alloy, and the thickness range defined in the present invention is a film made of a metal material having excellent corrosion resistance on the upper layer.
  • the reflection characteristics, particularly the reflectance at 300 nm improved from a few percent level to a few tens percent level in conventional silver. This can be applied to optical semiconductors using these wavelengths by improving the reflectivity in the ultraviolet region.
  • the outermost layer is too thick, the light cannot reach the pure silver layer and the optical properties of the outermost layer are strengthened.
  • Example 2 On a copper alloy made of C19400 having a thickness of 0.15 mm and a width of 30 mm, a nickel plating layer is formed as a base layer with a thickness of 1.0 ⁇ m, a pure silver layer is formed as an upper layer, and a Pt plating layer is formed as a top layer with a thickness shown in Table 3.
  • the lead frames of Examples 40 to 63 of the present invention and Comparative Examples 3 to 7 were obtained. Each plating procedure and liquid composition were the same as those in Example 1, and bright silver plating and matte silver plating were used for forming the pure silver layer.
  • the current density was adjusted under conditions of 0.1 to 10 A / dm 2 in bright silver plating and matte silver plating. Further, the Ra of the pure silver layer was measured by a contact type surface roughness meter (Surfcoder SE-30H (trade name): manufactured by Kosaka Laboratory) in the same manner as in Example 1.
  • Plating solution AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter, Na 2 S 2 O 3 5 g / liter Plating condition: current density 2 to 10 A / dm 2 , temperature 30 ° C.
  • Measurement Ag plating Plating solution: AgCN 50 g / liter, KCN 100 g / liter, K 2 CO 3 30 g / liter Plating condition: current density 0.1 to 5 A / dm 2 , temperature 30 ° C.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

L'invention porte sur une grille de connexion destinée à être utilisée dans des dispositifs à semi-conducteur optiques qui possède d'excellentes caractéristiques de réflexion par rapport à la lumière visible et une excellente résistance à la corrosion, et dans laquelle une couche d'argent pur composée d'argent pur est formée sur un substrat. La hauteur moyenne arithmétique Ra de ladite couche d'argent pur est de 0,001 – 0,2 µm, et sur sa surface est formé un film dont l’épaisseur moyenne est de 0,001 – 0,2 µm, composé d'un matériau métallique possédant une excellente résistance à la corrosion.
PCT/JP2009/071064 2008-12-19 2009-12-17 Grille de connexion de dispositif à semi-conducteur optique et son procédé de fabrication WO2010071182A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200980151171.1A CN102257647B (zh) 2008-12-19 2009-12-17 光半导体装置用引线框及其制造方法
KR1020117016384A KR101267718B1 (ko) 2008-12-19 2009-12-17 광반도체 장치용 리드 프레임 및 그 제조방법
JP2010543004A JP4763094B2 (ja) 2008-12-19 2009-12-17 光半導体装置用リードフレーム及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008324716 2008-12-19
JP2008-324716 2008-12-19

Publications (1)

Publication Number Publication Date
WO2010071182A1 true WO2010071182A1 (fr) 2010-06-24

Family

ID=42268851

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/071064 WO2010071182A1 (fr) 2008-12-19 2009-12-17 Grille de connexion de dispositif à semi-conducteur optique et son procédé de fabrication

Country Status (5)

Country Link
JP (1) JP4763094B2 (fr)
KR (1) KR101267718B1 (fr)
CN (1) CN102257647B (fr)
TW (1) TWI465614B (fr)
WO (1) WO2010071182A1 (fr)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011122665A1 (fr) * 2010-03-30 2011-10-06 大日本印刷株式会社 Conducteur-poutre ou substrat destiné à une diode électroluminescente, dispositif à semi-conducteur et procédé de fabrication de conducteur-poutre ou de substrat destiné à une diode électroluminescente
JP2012033919A (ja) * 2010-07-09 2012-02-16 Furukawa Electric Co Ltd:The 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置
JP2012107263A (ja) * 2010-11-15 2012-06-07 Kyowa Densen Kk メッキ構造及び被覆方法
JP2012138441A (ja) * 2010-12-27 2012-07-19 Dainippon Printing Co Ltd Ｌｅｄ用基板とその製造方法および半導体装置
JP2012151289A (ja) * 2011-01-19 2012-08-09 Furukawa Electric Co Ltd:The 光半導体実装用基板、その製造方法、及び光半導体装置
JP2013207221A (ja) * 2012-03-29 2013-10-07 Neomax Material:Kk 発光素子用基板および発光モジュール
JP5851000B1 (ja) * 2014-08-22 2016-02-03 株式会社神戸製鋼所 Ｌｅｄのリードフレーム用銅合金板条
JP2016042602A (ja) * 2015-12-17 2016-03-31 シャープ株式会社 発光装置および照明装置
JP2016072364A (ja) * 2014-09-29 2016-05-09 日亜化学工業株式会社 リードフレーム及び発光装置
US9577153B2 (en) 2012-02-20 2017-02-21 Sharp Kabushiki Kaisha Light emission device and illumination device
US9773960B2 (en) 2010-11-02 2017-09-26 Dai Nippon Printing Co., Ltd. Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements
WO2018198982A1 (fr) * 2017-04-27 2018-11-01 京セラ株式会社 Carte de circuit imprimé et dispositif émetteur de lumière la comportant
JP2020155748A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155746A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155747A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155749A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155750A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 半導体素子搭載用基板
JP2020167207A (ja) * 2019-03-28 2020-10-08 大口マテリアル株式会社 半導体素子搭載用部品、リードフレーム及び半導体素子搭載用基板

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102403437A (zh) * 2010-09-16 2012-04-04 日立电线株式会社 半导体发光元件搭载用基板以及使用其的半导体发光装置
JP5857355B2 (ja) * 2010-09-16 2016-02-10 Ｓｈマテリアル株式会社 半導体発光素子搭載用基板、及びそれを用いた半導体発光装置
CN102709267A (zh) * 2012-05-23 2012-10-03 顺德工业(江苏)有限公司 半导体中的导线架
CN104685108B (zh) * 2012-10-05 2017-09-29 古河电气工业株式会社 银反射膜、光反射构件及光反射构件的制造方法
JP6085536B2 (ja) * 2013-08-05 2017-02-22 株式会社Ｓｈカッパープロダクツ 銅条、めっき付銅条、リードフレーム及びｌｅｄモジュール
JP6187201B2 (ja) * 2013-11-29 2017-08-30 日亜化学工業株式会社 発光装置用反射膜、並びに、それを備えるリードフレーム、配線基板、ワイヤ、及び発光装置
CN104022295B (zh) * 2014-05-07 2016-10-19 南通大学 一种直接甲醇燃料电池PdAg/TiO2纳米管电极的制备方法
DE102014111895A1 (de) * 2014-08-20 2016-02-25 Infineon Technologies Ag Metallisierte elektrische Komponente
JP7011142B2 (ja) * 2016-09-30 2022-01-26 日亜化学工業株式会社 発光装置、発光装置用パッケージ及び発光装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006269667A (ja) * 2005-03-23 2006-10-05 Sumitomo Electric Ind Ltd 光反射膜およびそれを用いた発光ダイオード用パッケージ
JP2006303069A (ja) * 2005-04-19 2006-11-02 Sumitomo Metal Electronics Devices Inc 発光素子搭載用パッケージ
JP2008091818A (ja) * 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法
JP2008192635A (ja) * 2007-01-31 2008-08-21 Matsushita Electric Ind Co Ltd 光半導体装置、リードフレームおよび光半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101059361B1 (ko) * 2003-01-16 2011-08-24 파나소닉 주식회사 리드 프레임 및 반도체 발광장치
JP4172770B2 (ja) * 2003-03-26 2008-10-29 京セラ株式会社 発光素子収納用パッケージおよび発光装置
JP4480407B2 (ja) * 2004-01-29 2010-06-16 京セラ株式会社 発光素子収納用パッケージおよび発光装置
JP5226323B2 (ja) * 2006-01-19 2013-07-03 株式会社東芝 発光モジュールとそれを用いたバックライトおよび液晶表示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006269667A (ja) * 2005-03-23 2006-10-05 Sumitomo Electric Ind Ltd 光反射膜およびそれを用いた発光ダイオード用パッケージ
JP2006303069A (ja) * 2005-04-19 2006-11-02 Sumitomo Metal Electronics Devices Inc 発光素子搭載用パッケージ
JP2008091818A (ja) * 2006-10-05 2008-04-17 Matsushita Electric Ind Co Ltd 光半導体装置用リードフレームおよびこれを用いた光半導体装置、並びにこれらの製造方法
JP2008192635A (ja) * 2007-01-31 2008-08-21 Matsushita Electric Ind Co Ltd 光半導体装置、リードフレームおよび光半導体装置の製造方法

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011122665A1 (fr) * 2010-03-30 2011-10-06 大日本印刷株式会社 Conducteur-poutre ou substrat destiné à une diode électroluminescente, dispositif à semi-conducteur et procédé de fabrication de conducteur-poutre ou de substrat destiné à une diode électroluminescente
US9263315B2 (en) 2010-03-30 2016-02-16 Dai Nippon Printing Co., Ltd. LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate
US9966517B2 (en) 2010-03-30 2018-05-08 Dai Nippon Printing Co., Ltd. LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate
US9887331B2 (en) 2010-03-30 2018-02-06 Dai Nippon Printing Co., Ltd. LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate
JP2012033919A (ja) * 2010-07-09 2012-02-16 Furukawa Electric Co Ltd:The 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置
US9773960B2 (en) 2010-11-02 2017-09-26 Dai Nippon Printing Co., Ltd. Lead frame for mounting LED elements, lead frame with resin, method for manufacturing semiconductor devices, and lead frame for mounting semiconductor elements
JP2012107263A (ja) * 2010-11-15 2012-06-07 Kyowa Densen Kk メッキ構造及び被覆方法
JP2012138441A (ja) * 2010-12-27 2012-07-19 Dainippon Printing Co Ltd Ｌｅｄ用基板とその製造方法および半導体装置
JP2012151289A (ja) * 2011-01-19 2012-08-09 Furukawa Electric Co Ltd:The 光半導体実装用基板、その製造方法、及び光半導体装置
US9577153B2 (en) 2012-02-20 2017-02-21 Sharp Kabushiki Kaisha Light emission device and illumination device
JP2013207221A (ja) * 2012-03-29 2013-10-07 Neomax Material:Kk 発光素子用基板および発光モジュール
JP5851000B1 (ja) * 2014-08-22 2016-02-03 株式会社神戸製鋼所 Ｌｅｄのリードフレーム用銅合金板条
JP2016044330A (ja) * 2014-08-22 2016-04-04 株式会社神戸製鋼所 Ｌｅｄのリードフレーム用銅合金板条
WO2016027774A1 (fr) * 2014-08-22 2016-02-25 株式会社神戸製鋼所 Bande de plaque d'alliage de cuivre pour utilisation dans une grille de connexion de led
JP2016072364A (ja) * 2014-09-29 2016-05-09 日亜化学工業株式会社 リードフレーム及び発光装置
JP2016042602A (ja) * 2015-12-17 2016-03-31 シャープ株式会社 発光装置および照明装置
WO2018198982A1 (fr) * 2017-04-27 2018-11-01 京セラ株式会社 Carte de circuit imprimé et dispositif émetteur de lumière la comportant
JPWO2018198982A1 (ja) * 2017-04-27 2019-06-27 京セラ株式会社 回路基板およびこれを備える発光装置
JP2020155748A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155746A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155747A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155749A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 リードフレーム
JP2020155750A (ja) * 2019-03-22 2020-09-24 大口マテリアル株式会社 半導体素子搭載用基板
JP2020167207A (ja) * 2019-03-28 2020-10-08 大口マテリアル株式会社 半導体素子搭載用部品、リードフレーム及び半導体素子搭載用基板

Also Published As

Publication number Publication date
CN102257647A (zh) 2011-11-23
KR101267718B1 (ko) 2013-05-24
JP4763094B2 (ja) 2011-08-31
TWI465614B (zh) 2014-12-21
KR20110100281A (ko) 2011-09-09
JPWO2010071182A1 (ja) 2012-05-31
TW201030191A (en) 2010-08-16
CN102257647B (zh) 2014-07-23

Similar Documents

Publication Publication Date Title
JP4763094B2 (ja) 光半導体装置用リードフレーム及びその製造方法
JP4885309B2 (ja) 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法および光半導体装置
JP4897981B2 (ja) 光半導体装置用リードフレーム、その製造方法および光半導体装置
WO2010150824A1 (fr) Grille de connexion pour dispositif à semi-conducteurs optique, procédé de fabrication de grille de connexion pour dispositif à semi-conducteurs optique et dispositif à semi-conducteurs optique
KR101718575B1 (ko) 광반도체 장치용 리드 프레임, 광반도체 장치용 리드 프레임의 제조방법, 및 광반도체 장치
JP5089795B2 (ja) 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置
JP5578960B2 (ja) 光半導体装置用リードフレーム及びその製造方法
JP5695841B2 (ja) Ｌｅｄ用リードフレーム
JP5767521B2 (ja) 光半導体装置用リードフレーム及びその製造方法
JP2012151289A (ja) 光半導体実装用基板、その製造方法、及び光半導体装置
JP2017005224A (ja) 光学素子用リードフレームおよびその製造方法
JP2011129658A (ja) 光半導体装置用リードフレーム、光半導体装置用リードフレームの製造方法、および光半導体装置
JP2014072247A (ja) 長期信頼性を有する高反射率光半導体装置用リードフレーム用基体、それを用いた光半導体装置用リードフレームとその製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980151171.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09833485

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2010543004

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20117016384

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 09833485

Country of ref document: EP

Kind code of ref document: A1