WO2010061592A1 - 発光モジュール、発光モジュールの製造方法、および灯具ユニット - Google Patents
発光モジュール、発光モジュールの製造方法、および灯具ユニット Download PDFInfo
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- WO2010061592A1 WO2010061592A1 PCT/JP2009/006352 JP2009006352W WO2010061592A1 WO 2010061592 A1 WO2010061592 A1 WO 2010061592A1 JP 2009006352 W JP2009006352 W JP 2009006352W WO 2010061592 A1 WO2010061592 A1 WO 2010061592A1
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- Prior art keywords
- light
- light emitting
- wavelength conversion
- emitting module
- ceramic
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 125
- 238000013459 approach Methods 0.000 claims abstract description 22
- 230000003287 optical effect Effects 0.000 claims description 19
- 230000007423 decrease Effects 0.000 claims description 15
- 238000002834 transmittance Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 abstract description 120
- 239000004065 semiconductor Substances 0.000 abstract description 62
- 230000035699 permeability Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
- F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
- F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
- F21S41/141—Light emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Definitions
- the present invention relates to a light emitting module, a manufacturing method thereof, and a lamp unit including the light emitting module.
- LED Light Emitting
- a light source for irradiating strong light such as a lamp unit that irradiates light ahead of the vehicle, for the purpose of extending life and reducing power consumption.
- Development of a technique using a light emitting module having a light emitting element such as a diode is underway.
- the light emitting module is required to have high luminance and high luminous intensity.
- a light emitting element that mainly emits blue light, a yellow phosphor that emits mainly yellow light when excited by blue light, and blue light is transmitted from the light emitting element.
- An illuminating device has been proposed that includes blue-transmitting yellow-based reflecting means that reflects light having a wavelength equal to or greater than that of yellow light from a yellow-based phosphor (see, for example, Patent Document 1).
- FIG. 9 shows an example of a light path in the light emitting module 200 in which the light wavelength conversion ceramic 204 having a rectangular cross section is mounted on the upper surface of the semiconductor light emitting element 202.
- a part of the light emitted from the semiconductor light emitting element 202 travels obliquely.
- Such light is reflected inside the emission surface of the light wavelength conversion ceramic 204, is reflected again inside the end surface of the light wavelength conversion ceramic 204, and returns to the semiconductor light emitting element 202.
- the light returning to the semiconductor light emitting element 202 is easily absorbed by the semiconductor light emitting element 202 as it is, leading to a decrease in light use efficiency.
- the present invention has been made to solve the above-described problems, and an object thereof is to improve the light use efficiency by the light wavelength conversion member in the light emitting module.
- a light emitting module includes a light emitting element and a plate-shaped light wavelength conversion member that converts the wavelength of light emitted from the light emitting element and emits the light.
- the light wavelength conversion member has a tapered surface that is inclined so that the thickness decreases as it approaches the edge.
- the light traveling toward the edge can be efficiently emitted from the tapered surface to the outside. For this reason, the light which reflects in the periphery of an edge part and returns to a light emitting element can be reduced, and the utilization efficiency of light can be improved.
- the light wavelength conversion member may be transparent. According to this aspect, it is possible to suppress a decrease in luminous intensity when light passes through the light wavelength conversion member. For this reason, it becomes possible to utilize the light which a light emitting element emits efficiently.
- the light wavelength conversion member may have a total light transmittance of 40% or more in the converted emission wavelength band.
- the total light transmittance of the light emission wavelength band after conversion in the light wavelength conversion member is in a transparent state of 40% or more, appropriate conversion of the wavelength of light by the light wavelength conversion member It has been found that it is possible to achieve both a reduction in the intensity of light passing through the light wavelength conversion member. Therefore, according to this aspect, it is possible to appropriately convert the wavelength of light passing through the light wavelength conversion member while suppressing a decrease in luminous intensity.
- the tapered surface may be inclined so as to approach the light emitting element as it approaches the edge. According to this aspect, light can be efficiently emitted from the light wavelength conversion member in the same direction as the light emitting element emits light.
- the tapered surface may be inclined so as to move away from the light emitting element as it approaches the edge.
- the light can be efficiently emitted from the light wavelength conversion member in the same direction as the light emitting element emits light.
- Another aspect of the present invention is a method for manufacturing a light emitting module.
- a plate-like light wavelength conversion member that converts the wavelength of incident light and emits it is provided with a tapered surface that is inclined so that the thickness decreases as it approaches the edge, and light emitted from the light emitting element Arranging the light emitting element and the light wavelength conversion member so as to be incident on the light wavelength conversion member.
- the tapered surface can be easily provided. For this reason, it becomes possible to easily manufacture a light emitting module with good light utilization efficiency.
- Still another aspect of the present invention is a lamp unit.
- the lamp unit includes a light emitting module having a light emitting element and a plate-shaped light wavelength conversion member that converts the wavelength of light emitted from the light emitting element and emits the light, and an optical member that collects light emitted from the light emitting module. And comprising.
- the light wavelength conversion member has a tapered surface that is inclined so that the thickness decreases as it approaches the edge.
- the light utilization efficiency by the light wavelength conversion member in the light emitting module can be improved.
- FIG. 1 is a cross-sectional view showing a configuration of a vehicle headlamp 10 according to the first embodiment.
- the vehicle headlamp 10 includes a lamp body 12, a front cover 14, and a lamp unit 16.
- the left side in FIG. 1 will be described as the front of the lamp, and the right side will be described as the rear of the lamp. Further, the right side of the lamp in front of the lamp is called the right side of the lamp, and the left side is called the left side of the lamp.
- FIG. 1 shows a cross section of the vehicle headlamp 10 cut by a vertical plane including the optical axis of the lamp unit 16 as viewed from the left side of the lamp.
- the vehicle headlamps 10 formed symmetrically with each other are provided on the vehicle left front and right front, respectively.
- FIG. 1 shows the configuration of the left or right vehicle headlamp 10.
- the lamp body 12 is formed in a box shape having an opening.
- the front cover 14 is formed in a bowl shape with a translucent resin or glass.
- the front cover 14 has an edge attached to the opening of the lamp body 12. In this way, a lamp chamber is formed in an area covered by the lamp body 12 and the front cover 14.
- a lamp unit 16 is arranged in the lamp chamber.
- the lamp unit 16 is fixed to the lamp body 12 by an aiming screw 18.
- the lower aiming screw 18 is configured to rotate when the leveling actuator 20 is operated. For this reason, it is possible to move the optical axis of the lamp unit 16 in the vertical direction by operating the leveling actuator 20.
- the lamp unit 16 includes a projection lens 30, a support member 32, a reflector 34, a bracket 36, a light emitting module substrate 38, and a radiation fin 42.
- the projection lens 30 is a plano-convex aspheric lens having a convex front surface and a flat rear surface, and projects a light source image formed on the rear focal plane as a reverse image to the front of the lamp.
- the support member 32 supports the projection lens 30.
- a light emitting module 40 is provided on the light emitting module substrate 38.
- the reflector 34 reflects light from the light emitting module 40 and forms a light source image on the rear focal plane of the projection lens 30.
- the reflector 34 and the projection lens 30 function as an optical member that condenses the light emitted from the light emitting module 40 toward the front of the lamp.
- the radiation fins 42 are attached to the rear surface of the bracket 36 and mainly radiate heat generated by the light emitting module 40.
- the support member 32 is formed with a shade 32a.
- the vehicle headlamp 10 is used as a low beam light source, and the shade 32a blocks a part of the light emitted from the light emitting module 40 and reflected by the reflector 34, so that the cut-off line in the low beam light distribution pattern in front of the vehicle. Form. Since the low beam light distribution pattern is known, the description thereof is omitted.
- FIG. 2 is a diagram showing a configuration of the light emitting module substrate 38 according to the first embodiment.
- the light emitting module substrate 38 includes a light emitting module 40, a substrate 44, and a transparent cover 46.
- the substrate 44 is a printed wiring board, and the light emitting module 40 is attached to the upper surface.
- the light emitting module 40 is covered with a colorless transparent cover 46. Therefore, the inside of the transparent cover 46 is hollow.
- the light emitting module 40 includes a semiconductor light emitting element 48 and a light wavelength conversion ceramic 52 that is a light wavelength conversion member.
- the light wavelength conversion ceramic 52 is stacked on the upper surface of the semiconductor light emitting device 48.
- FIG. 3 is a diagram illustrating a configuration of the light emitting module 40 according to the first embodiment.
- the semiconductor light emitting element 48 is configured by an LED element.
- a blue LED that mainly emits light having a blue wavelength is employed as the semiconductor light emitting element 48.
- the semiconductor light emitting device 48 is configured by a GaN-based LED device formed by crystal growth of a GaN-based semiconductor layer on a sapphire substrate.
- the semiconductor light emitting device 48 is formed as a 1 mm square chip, for example, and is provided so that the center wavelength of the emitted blue light is 470 nm.
- the configuration of the semiconductor light emitting device 48 and the wavelength of the emitted light are not limited to those described above.
- the light wavelength conversion ceramic 52 is a so-called luminescent ceramic or fluorescent ceramic, and is a YAG (Yttrium) which is a phosphor excited by blue light. It can be obtained by sintering a ceramic body made with Alminium Garnet powder. Since the manufacturing method of such a light wavelength conversion ceramic is well-known, detailed description is abbreviate
- the light wavelength conversion ceramic 52 thus obtained converts the wavelength of blue light mainly emitted from the semiconductor light emitting element 48 and emits yellow light. For this reason, the light emitting module 40 emits combined light of blue light that has passed through the light wavelength conversion ceramic 52 as it is and yellow light whose wavelength has been converted by the light wavelength conversion ceramic 52. In this way, white light can be emitted from the light emitting module 40.
- a transparent material is used for the light wavelength conversion ceramic 52.
- “transparent” means that the total light transmittance in the converted emission wavelength band is 40% or more.
- the wavelength of light by the light wavelength conversion ceramic 52 can be appropriately converted, and the light It has been found that a decrease in the intensity of light passing through the wavelength conversion ceramic 52 can also be appropriately suppressed. Therefore, the light emitted from the semiconductor light emitting element 48 can be more efficiently converted by making the light wavelength conversion ceramic 52 transparent.
- the light wavelength conversion ceramic 52 is composed of a binderless inorganic material, and the durability is improved as compared with the case where an organic material such as a binder is contained. For this reason, for example, it is possible to supply 1 W (watt) or more of power to the light emitting module 40, and it is possible to increase the luminance and luminous intensity of the light emitted from the light emitting module 40.
- the semiconductor light emitting device 48 may be one that mainly emits light having a wavelength other than blue. Also in this case, the light wavelength conversion ceramic 52 that converts the wavelength of the main light emitted from the semiconductor light emitting element 48 is employed. In this case, the wavelength of the light emitted from the semiconductor light emitting element 48 is changed so that the light wavelength conversion ceramic 52 becomes light having a wavelength of white or near white by combining with light having a wavelength mainly emitted from the semiconductor light emitting element 48 in this case. May be converted.
- the light wavelength conversion ceramic 52 is formed in a plate shape. A part of the light emitted from the semiconductor light emitting element 48 travels obliquely with respect to the light emitting surface. For example, when the optical wavelength conversion ceramic 52 is formed in a rectangular cross section, the light wavelength conversion ceramic 52 is thus inclined toward the surface of the optical wavelength conversion ceramic 52. May return. Since the semiconductor light emitting element 48 absorbs the light reflected and returned, it leads to a reduction in light use efficiency.
- the light traveling in this way has a high probability that the wavelength is converted inside the light wavelength conversion ceramic 52, and thus the light emitted from the edge portion has a large color difference from the light emitted from the upper surface, and a large color. Misalignment may occur.
- the light wavelength conversion ceramic 52 has a tapered surface 52a that is inclined so that its thickness decreases as it approaches the edge.
- the tapered surface 52a is inclined so as to approach the semiconductor light emitting element 48 as it approaches the edge.
- the tapered surface 52a in this way, it is possible to reduce the light emitted through the inside of the light wavelength conversion ceramic 52 for a long distance. For this reason, the color shift which arises in the light radiate
- a tapered surface 52a is provided at the end of the plate-like light wavelength conversion ceramic 52 so that the thickness decreases as it approaches the edge.
- the tapered surface 52a can be provided by laser processing or the like.
- a tapered surface 52 a may be provided when the light wavelength conversion ceramic 52 is molded.
- the surface opposite to the side on which the tapered surface 52 a is provided is attached to the upper surface (light emitting surface) of the semiconductor light emitting device 48.
- the semiconductor light emitting element 48 and the light wavelength conversion ceramic 52 can be arranged so that the light emitted from the semiconductor light emitting element 48 enters the light wavelength conversion ceramic 52.
- the tapered surface 52a can be easily provided.
- FIG. 4 is a diagram illustrating a configuration of a light emitting module 60 according to the second embodiment.
- the configuration of the vehicle headlamp 10 is the same as that of the first embodiment except that a light emitting module 60 is provided instead of the light emitting module 40.
- a light emitting module 60 is provided instead of the light emitting module 40.
- the same parts as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.
- the configuration of the light emitting module 60 is the same as that of the light emitting module 40 described above except that a light wavelength conversion ceramic 62 which is a light wavelength conversion member is provided instead of the light wavelength conversion ceramic 52.
- the optical wavelength conversion ceramic 62 has a tapered surface 62a that is inclined so that its thickness decreases as it approaches the edge.
- the tapered surface 62 a protrudes in a direction in which the light emitting surface expands from the end portion of the semiconductor light emitting device 48, and is inclined so as to be farther from the light emitting surface of the semiconductor light emitting device 48 as it approaches the edge portion.
- the plate-like light wavelength conversion ceramic 62 is provided with a tapered surface 62 a in advance, and the surface on which the tapered surface 62 a is provided is attached to the upper surface of the semiconductor light emitting device 48. Also in the second embodiment, since the plate-like light wavelength conversion ceramic 62 is used, the tapered surface 62a can be easily provided.
- FIG. 5 is a diagram illustrating a configuration of a light emitting module 70 according to the third embodiment.
- the configuration of the vehicle headlamp 10 is the same as that of the first embodiment except that a light emitting module 70 is provided instead of the light emitting module 40.
- a light emitting module 70 is provided instead of the light emitting module 40.
- the same parts as those in the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.
- the configuration of the light emitting module 70 is the same as that of the light emitting module 40 described above except that a light wavelength conversion ceramic 72, which is a light wavelength conversion member, and a transparent ceramic 74 are provided instead of the light wavelength conversion ceramic 52. is there.
- the light wavelength conversion ceramic 72 is formed in the same shape as the light wavelength conversion ceramic 52 in the first embodiment. Therefore, the light wavelength conversion ceramic 72 also has a tapered surface 72a that is inclined so as to approach the semiconductor light emitting element 48 as it approaches the edge.
- the light wavelength conversion ceramic 72 is attached to the upper surface of the semiconductor light emitting device 48 on the surface opposite to the side on which the tapered surface 72 a is provided.
- the transparent ceramic 74 is formed in a shape obtained by hollowing out the shape of the light wavelength conversion ceramic 72, and is attached to the upper portion of the light wavelength conversion ceramic 72 so that the light wavelength conversion ceramic 72 is accommodated in the hollowed portion and integrated. .
- a reflecting mirror that reflects upward the light emitted from the edge of the transparent ceramic 74 may be provided around the light emitting module 70. Further, instead of the transparent ceramic 74, another transparent member that is not a ceramic may be integrally attached to the upper surface of the light wavelength conversion ceramic 72.
- FIG. 6 is a diagram illustrating a configuration of a light emitting module 80 according to the fourth embodiment.
- the configuration of the vehicular headlamp 10 is the same as that of the first embodiment except that a light emitting module 80 is provided instead of the light emitting module 40.
- a light emitting module 80 is provided instead of the light emitting module 40.
- the same parts as those in the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.
- the configuration of the light emitting module 80 is the same as that of the light emitting module 40 described above except that a ceramic unit 82 is provided instead of the light wavelength conversion ceramic 52.
- the ceramic unit 82 includes a light wavelength conversion ceramic 84 that is a light wavelength conversion member and a reflection layer 86.
- the light wavelength conversion ceramic 84 has a tapered surface 84a that is inclined so that its thickness decreases as it approaches the edge.
- the tapered surface 84 a protrudes in a direction in which the light emitting surface expands from the end portion of the semiconductor light emitting device 48, and is inclined so as to move away from the light emitting surface of the semiconductor light emitting device 48 as approaching the edge portion.
- the reflective layer 86 is provided on the tapered surface 84a.
- the reflecting layer 86 may be formed by attaching a reflecting mirror to the tapered surface 84a, for example, by applying a mirror surface treatment such as aluminum vapor deposition to the tapered surface 84a.
- the reflective layer 86 is formed with a reflective surface 86a at a portion in contact with the tapered surface 84a.
- a tapered surface 84a is first provided on the plate-shaped light wavelength conversion ceramic 84.
- the reflective layer 86 is provided on the tapered surface 84a to constitute the ceramic unit 82.
- the ceramic unit 82 is attached to the semiconductor light emitting device 48 by fixing the surface of the light wavelength conversion ceramic 84 on the side where the tapered surface 84 a is provided to the upper surface of the semiconductor light emitting device 48 by bonding or the like.
- the light emitting module 80 manufactured in this manner out of the light emitted from the semiconductor light emitting element 48, the light that travels obliquely around the edge of the light wavelength conversion ceramic 84 and is about to be emitted from the reflecting surface 86a is emitted by the reflecting surface 86a. The light is reflected upward of the module 80.
- the reflective layer 86 on the tapered surface 84a it is possible to improve the light use efficiency and to emit a large amount of light toward the upper side of the light emitting module 80.
- FIG. 7 is a diagram illustrating a configuration of a light emitting module 90 according to the fifth embodiment.
- the configuration of the vehicle headlamp 10 is the same as that of the first embodiment except that a light emitting module 90 is provided instead of the light emitting module 40.
- a light emitting module 90 is provided instead of the light emitting module 40.
- the same parts as those of the above-described embodiment are denoted by the same reference numerals, and description thereof is omitted.
- the configuration of the light emitting module 90 is the same as that of the light emitting module 40 described above except that a ceramic unit 92 is provided instead of the light wavelength conversion ceramic 52.
- the ceramic unit 92 includes a light wavelength conversion ceramic 94 that is a light wavelength conversion member, and a reflective layer 96.
- the light wavelength conversion ceramic 94 has a tapered surface 94a that is inclined so that its thickness decreases as it approaches the edge.
- the tapered surface 94a protrudes in a direction in which the light emitting surface expands from the end of the semiconductor light emitting device 48, and inclines so as to advance in a direction away from the light emitting surface of the semiconductor light emitting device 48 as it approaches the edge.
- the reflective layer 96 is provided on the tapered surface 94a.
- the reflection layer 96 may be formed by attaching a reflection mirror to the tapered surface 94a, for example, by applying the above-described mirror surface treatment to the tapered surface 94a.
- the reflective layer 96 is formed with a reflective surface 96a at a portion in contact with the tapered surface 94a.
- a tapered surface 94a is first provided on the plate-shaped light wavelength conversion ceramic 94.
- a concave portion is formed on the surface on which the tapered surface 94a is provided by hollowing out the shape of the semiconductor light emitting element 48 by, for example, etching or laser processing.
- a ceramic layer 92 is formed by providing a reflective layer 96 on the tapered surface 94a.
- the semiconductor light emitting device 48 is accommodated in a recess formed in the light wavelength conversion ceramic 94 and fixed by bonding or the like, so that the ceramic unit 92 is attached to the semiconductor light emitting device 48.
- the light emitted from the semiconductor light emitting element 48 that obliquely travels around the edge of the light wavelength conversion ceramic 94 and is about to be emitted from the reflecting surface 96a is emitted by the reflecting surface 96a. Reflected toward the upper side of the module 90.
- the reflective layer 96 on the tapered surface 94a in this manner, light utilization efficiency can be improved and a large amount of light can be emitted upward of the light emitting module 90.
- FIG. 8 is a diagram illustrating a configuration of a light emitting module 100 according to the sixth embodiment.
- the configuration of the vehicle headlamp 10 is the same as that of the first embodiment except that the light emitting module 100 is provided instead of the light emitting module 40.
- the same parts as those in the above-described embodiment are denoted by the same reference numerals and description thereof is omitted.
- the configuration of the light emitting module 100 is the same as that of the light emitting module 40 described above except that a transparent ceramic 102 and a ceramic unit 104 are provided instead of the light wavelength conversion ceramic 52.
- the transparent ceramic 102 is formed in a plate shape, and a tapered surface 102a is provided around the edge. On the surface of the transparent ceramic 102 provided with the tapered surface 102a, a recess is formed by hollowing out the shape of the semiconductor light emitting device 48 as it is.
- the ceramic unit 104 includes a light wavelength conversion ceramic 106 that is a light wavelength conversion member, and a reflective layer 108.
- the optical wavelength conversion ceramic 106 has a tapered surface 106a that is inclined so that its thickness decreases as it approaches the edge.
- the tapered surface 106 a protrudes in a direction in which the light emitting surface expands from the end portion of the semiconductor light emitting device 48, and is inclined so as to move away from the semiconductor light emitting device 48 as approaching the edge portion.
- the reflective layer 108 is provided on the tapered surface 106a.
- the reflecting layer 108 may be formed by attaching a reflecting mirror to the tapered surface 106a, for example, by applying the above-described mirror surface treatment to the tapered surface 106a.
- the reflective layer 108 is formed with a reflective surface 108a at a portion in contact with the tapered surface 106a.
- the transparent ceramic 102 is first provided with a tapered surface 102a. Further, a concave portion in which the shape of the semiconductor light emitting element 48 is cut out as it is is formed on the surface of the transparent ceramic 102 where the tapered surface 102a is provided by, for example, etching or laser processing. Further, the tapered optical wavelength conversion ceramic 106 is provided with a tapered surface 106a, and the reflective layer 108 is provided on the tapered surface 106a to constitute the ceramic unit 104.
- the transparent ceramic 102 is first attached to the semiconductor light emitting device 48 by housing the semiconductor light emitting device 48 in a recess formed in the transparent ceramic 102 and fixing it by bonding or the like. Next, the surface provided with the tapered surface 106a of the light wavelength conversion ceramic 106 is fixed to the upper surface of the transparent ceramic 102 by adhesion or the like. In this way, the ceramic unit 104 is attached to the transparent ceramic 102.
- the light emitted from the semiconductor light emitting element 48 that obliquely travels around the edge of the light wavelength conversion ceramic 106 and is emitted from the reflecting surface 108a is emitted by the reflecting surface 108a. Reflected toward the upper side of the module 100.
- the reflective layer 108 on the tapered surface 106 a in this manner, light use efficiency can be improved and a large amount of light can be emitted upward of the light emitting module 100.
- an optical filter is provided between the semiconductor light emitting device 48 and the light wavelength conversion ceramic.
- This optical filter transmits blue light mainly emitted from the semiconductor light emitting device 48. Further, this optical filter reflects yellow light mainly emitted by converting the wavelength of blue light by the light wavelength conversion ceramic.
- the optical filter may be composed of a dichroic mirror formed into a multilayer film by alternately depositing and laminating materials having different refractive indexes on one surface of the light wavelength conversion ceramic.
- a long pass filter, a short pass filter, or a band pass filter may be employed.
- the light utilization efficiency by the light wavelength conversion member in the light emitting module can be improved.
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Abstract
Description
Diode)などの発光素子を有する発光モジュールを用いる技術の開発が進められている。しかし、このような用途で用いるためには発光モジュールに高輝度や高光度が求められることになる。ここで、例えば白色光の取り出し効率を向上させるべく、主として青色光を発光する発光素子と、青色光により励起されて主として黄色光を発光する黄色系蛍光体と、発光素子から青色光を透過させ、黄色系蛍光体からの黄色光以上の波長の光を反射する青色透過黄色系反射手段と、を備える照明装置が提案されている(例えば、特許文献1参照)。
図1は、第1の実施形態に係る車両用前照灯10の構成を示す断面図である。車両用前照灯10は、灯具ボディ12、前面カバー14、および灯具ユニット16を有する。以下、図1において左側を灯具前方、右側を灯具後方として説明する。また、灯具前方にみて右側を灯具右側、左側を灯具左側という。図1は、灯具ユニット16の光軸を含む鉛直平面によって切断された車両用前照灯10を灯具左側から見た断面を示している。なお、車両用前照灯10が車両に装着される場合、車両には互いに左右対称に形成された車両用前照灯10が車両左前方および右前方のそれぞれに設けられる。図1は、左右いずれかの車両用前照灯10の構成を示している。
Alminium Garnet)粉末を用いて作成されたセラミック素地を焼結することにより得ることができる。このような光波長変換セラミックの製造方法は公知であることから詳細な説明は省略する。
図4は、第2の実施形態に係る発光モジュール60の構成を示す図である。なお、発光モジュール40に代えて発光モジュール60が設けられる以外は、車両用前照灯10の構成は第1の実施形態と同様である。以下、第1の実施形態と同様の個所については同一の符号を付して説明を省略する。
図5は、第3の実施形態に係る発光モジュール70の構成を示す図である。なお、発光モジュール40に代えて発光モジュール70が設けられる以外は、車両用前照灯10の構成は第1の実施形態と同様である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図6は、第4の実施形態に係る発光モジュール80の構成を示す図である。なお、発光モジュール40に代えて発光モジュール80が設けられる以外は、車両用前照灯10の構成は第1の実施形態と同様である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図7は、第5の実施形態に係る発光モジュール90の構成を示す図である。なお、発光モジュール40に代えて発光モジュール90が設けられる以外は、車両用前照灯10の構成は第1の実施形態と同様である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
図8は、第6の実施形態に係る発光モジュール100の構成を示す図である。なお、発光モジュール40に代えて発光モジュール100が設けられる以外は、車両用前照灯10の構成は第1の実施形態と同様である。以下、上述の実施形態と同様の個所については同一の符号を付して説明を省略する。
Claims (8)
- 発光素子と、
前記発光素子が発する光の波長を変換して出射する板状の光波長変換部材と、
を備え、
前記光波長変換部材は、縁部に近づくにしたがって厚みが減少するよう傾斜するテーパー面を有することを特徴とする発光モジュール。 - 前記光波長変換部材は、透明であることを特徴とする請求項1に記載の発光モジュール。
- 前記光波長変換部材は、変換後の発光波長帯の全光線透過率が40%以上であることを特徴とする請求項2に記載の発光モジュール。
- 前記テーパー面は、縁部に近づくにしたがって前記発光素子に近づくよう傾斜することを特徴とする請求項1から3のいずれかに記載の発光モジュール。
- 前記テーパー面は、縁部に近づくにしたがって前記発光素子から遠ざかるよう傾斜することを特徴とする請求項1から3のいずれかに記載の発光モジュール。
- 前記テーパー面上に設けられ、前記光波長変換部材から出射しようとする光を反射する反射層をさらに備えることを特徴とする請求項5に記載の発光モジュール。
- 入射した光の波長を変換して出射する板状の光波長変換部材に、縁部に近づくにしたがって厚みが減少するよう傾斜するテーパー面を設ける工程と、
発光素子が発する光が前記光波長変換部材に入射するよう前記発光素子および前記光波長変換部材を配置する工程と、
を備えることを特徴とする発光モジュールの製造方法。 - 発光素子と、前記発光素子が発する光の波長を変換して出射する板状の光波長変換部材と、を有する発光モジュールと、
前記発光モジュールから出射された光を集光する光学部材と、
を備え、
前記光波長変換部材は、縁部に近づくにしたがって厚みが減少するよう傾斜するテーパー面を有することを特徴とする灯具ユニット。
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US13/131,736 US8994051B2 (en) | 2008-11-28 | 2009-11-25 | Light emission module, light emission module manufacturing method, and lamp unit |
EP09828842.6A EP2363896A4 (en) | 2008-11-28 | 2009-11-25 | LIGHT EMITTING MODULE, LIGHT TRANSMITTING MODULE MANUFACTURING METHOD, AND LAMP UNIT |
CN200980147484XA CN102227827A (zh) | 2008-11-28 | 2009-11-25 | 发光模块、发光模块的制造方法以及灯具单元 |
JP2010540370A JP5606922B2 (ja) | 2008-11-28 | 2009-11-25 | 発光モジュールおよび灯具ユニット |
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EP (1) | EP2363896A4 (ja) |
JP (2) | JP5606922B2 (ja) |
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JP7330755B2 (ja) | 2019-05-16 | 2023-08-22 | スタンレー電気株式会社 | 発光装置 |
JP2021197453A (ja) * | 2020-06-15 | 2021-12-27 | 新光電気工業株式会社 | 発光装置 |
JP7438858B2 (ja) | 2020-06-15 | 2024-02-27 | 新光電気工業株式会社 | 発光装置 |
US11978831B2 (en) | 2020-06-15 | 2024-05-07 | Shinko Electric Industries Co., Ltd. | Light emitting device |
Also Published As
Publication number | Publication date |
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JPWO2010061592A1 (ja) | 2012-04-26 |
JP5606922B2 (ja) | 2014-10-15 |
US8994051B2 (en) | 2015-03-31 |
CN102227827A (zh) | 2011-10-26 |
JP2015015485A (ja) | 2015-01-22 |
EP2363896A1 (en) | 2011-09-07 |
EP2363896A4 (en) | 2013-08-28 |
US20110284902A1 (en) | 2011-11-24 |
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