JP2020074419A - 波長変換式半導体発光デバイス - Google Patents
波長変換式半導体発光デバイス Download PDFInfo
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- H01L33/50—Wavelength conversion elements
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Abstract
Description
Claims (22)
- 第1の波長の光を、より長い第2の波長の光へと変換するように構成された波長変換セラミック層と、
前記波長変換セラミック層上に配置された窒化シリコン層及び/又は酸化シリコン層と、
前記窒化シリコン層及び/又は酸化シリコン層上に配置され、前記第1の波長の光を、より長い、前記第2の波長とは異なる、第3の波長の光へと変換するように構成された波長変換ガラス層と
を有する波長変換器。 - 前記第2の波長は赤色であり、前記第3の波長は緑色である、請求項1に記載の波長変換器。
- 前記波長変換セラミック層及び前記波長変換ガラス層は、傾斜した側壁を有する、請求項1に記載の波長変換器。
- 前記波長変換セラミック層及び前記波長変換ガラス層は、波長変換部材を形成し、
前記波長変換部材の第1の部分は、実質的に垂直な側壁を有し、且つ
前記波長変換部材の第2の部分は、傾斜した側壁を有する、
請求項1に記載の波長変換器。 - n型領域とp型領域との間に配置され、第1の波長の光を発するように構成された発光層を有する半導体構造と、
前記発光層によって発せられる光の経路内に配置された、請求項1乃至4のいずれかに記載の波長変換器と、
を有する発光デバイス。 - 前記波長変換セラミック層は、前記波長変換ガラス層と前記半導体構造との間に配置されている、請求項5に記載の発光デバイス。
- 当該発光デバイスは更に反射材料を有し、
前記反射材料は、前記波長変換セラミック層の側壁、前記波長変換ガラス層の側壁、及び前記半導体構造の側壁の各々に隣接して配置されている、請求項6に記載の発光デバイス。 - 波長変換素子を形成することを有し、
前記形成することは、
波長変換セラミック層を形成すること、
前記波長変換セラミック層の表面上に窒化シリコン層及び/又は酸化シリコン層を形成すること、及び
前記窒化シリコン層及び/又は酸化シリコン層の表面上に波長変換ガラス層を配置することであり、
波長変換材料をガラスと混合し、
混合物をローラでシートへと延ばし、
前記波長変換セラミック層に形状が合うように前記シートを切断し、且つ
前記切断されたシートを前記窒化シリコン層及び/又は酸化シリコン層の前記表面に取り付ける
ことを有する、配置すること
を有する、
方法。 - 前記波長変換セラミック層を形成することは、蛍光体をウェハへと焼結することを有する、請求項8に記載の方法。
- 前記切断されたシートを前記窒化シリコン層及び/又は酸化シリコン層の前記表面に取り付けることは、前記切断されたシート及び前記波長変換セラミック層を加熱することを有する、請求項8に記載の方法。
- 前記窒化シリコン層及び/又は酸化シリコン層の前記表面上に前記波長変換ガラス層を配置することに先立って、前記波長変換セラミック層を薄化すること、を更に有する請求項8に記載の方法。
- 前記窒化シリコン層及び/又は酸化シリコン層の前記表面上に前記波長変換ガラス層を配置することの後に、前記波長変換セラミック層を薄化すること、を更に有する請求項8に記載の方法。
- 前記波長変換素子を複数のプレートレットへとダイシングすることと、
前記ダイシングの後に、プレートレットを半導体発光デバイスに取り付けることと、
を有する請求項8乃至12のいずれかに記載の方法。 - 前記波長変換素子を前記複数のプレートレットへとダイシングすることは、傾斜した側壁を各プレートレットに形成することを有する、請求項13に記載の方法。
- 前記波長変換素子を前記複数のプレートレットへとダイシングすることは、
各プレートレットの第1の部分に、前記プレートレットの頂面に対して第1の角度を持つ側壁を形成し、且つ
各プレートレットの第2の部分に、前記プレートレットの頂面に対して第2の角度を持つ側壁を形成する
ことを有し、
前記第1の角度は前記第2の角度と異なる、
請求項13に記載の方法。 - 波長変換素子を形成することを有し、
前記形成することは、
波長変換セラミック層を形成すること、
前記波長変換セラミック層の表面上に窒化シリコン層及び/又は酸化シリコン層を形成すること、及び
前記窒化シリコン層及び/又は酸化シリコン層の表面上に波長変換ガラス層を配置することであり、
波長変換材料をガラスと混合し、
混合物を前記窒化シリコン層及び/又は酸化シリコン層上に置き、
実質的に均一な厚さの層を形成するように前記混合物を広げる
ことを有する、配置すること
を有する、
方法。 - 前記窒化シリコン層及び/又は酸化シリコン層の前記表面上に前記波長変換ガラス層を配置することに先立って、前記波長変換セラミック層を薄化すること、を更に有する請求項16に記載の方法。
- 前記窒化シリコン層及び/又は酸化シリコン層の前記表面上に前記波長変換ガラス層を配置することの後に、前記波長変換セラミック層を薄化すること、を更に有する請求項16に記載の方法。
- 前記波長変換素子を複数のプレートレットへとダイシングすることと、
複数の半導体発光デバイスをマウントに取り付けることと、
前記ダイシングの後に、前記複数のうちの各半導体発光デバイスにプレートレットを取り付けることと、
前記複数のうちの隣接する半導体発光デバイス間に反射材料を配設することと、
を有する請求項16乃至18のいずれかに記載の方法。 - 前記隣接する半導体発光デバイス間に前記反射材料を配設することの後に、前記反射材料を薄化すること、を更に有する請求項19に記載の方法。
- 前記波長変換素子を前記複数のプレートレットへとダイシングすることは、傾斜した側壁を各プレートレットに形成することを有する、請求項19に記載の方法。
- 前記波長変換素子を前記複数のプレートレットへとダイシングすることは、
各プレートレットの第1の部分に、前記プレートレットの頂面に対して第1の角度を持つ側壁を形成し、且つ
各プレートレットの第2の部分に、前記プレートレットの頂面に対して第2の角度を持つ側壁を形成する
ことを有し、
前記第1の角度は前記第2の角度と異なる、
請求項19に記載の方法。
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KR102180388B1 (ko) | 2020-11-19 |
US20190252580A1 (en) | 2019-08-15 |
US20180033923A1 (en) | 2018-02-01 |
US10790417B2 (en) | 2020-09-29 |
US9761768B2 (en) | 2017-09-12 |
CN111509112B (zh) | 2024-04-02 |
JP7068771B2 (ja) | 2022-05-17 |
US20160163931A1 (en) | 2016-06-09 |
EP3020076B1 (en) | 2017-09-06 |
JP2016524344A (ja) | 2016-08-12 |
EP3020076A1 (en) | 2016-05-18 |
CN105493301A (zh) | 2016-04-13 |
CN111509112A (zh) | 2020-08-07 |
JP7316947B2 (ja) | 2023-07-28 |
WO2015004577A1 (en) | 2015-01-15 |
US10270013B2 (en) | 2019-04-23 |
KR20160032147A (ko) | 2016-03-23 |
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