WO2009113298A1 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
- Publication number
- WO2009113298A1 WO2009113298A1 PCT/JP2009/001068 JP2009001068W WO2009113298A1 WO 2009113298 A1 WO2009113298 A1 WO 2009113298A1 JP 2009001068 W JP2009001068 W JP 2009001068W WO 2009113298 A1 WO2009113298 A1 WO 2009113298A1
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- WO
- WIPO (PCT)
- Prior art keywords
- switching element
- snubber circuit
- power converter
- power
- circuit
- Prior art date
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
- H02M1/348—Passive dissipative snubbers
Definitions
- the present invention relates to a power conversion device having a switching element.
- Wide bandgap semiconductors such as the above-mentioned SiC semiconductors have a higher breakdown voltage than conventional Si semiconductors (semiconductors using Si crystals) (SiC semiconductors are about 10 times higher), so the device has a high breakdown voltage. If the same breakdown voltage is obtained, the thickness of the device can be reduced as compared with the case of a Si semiconductor, so that a device having a small conduction loss and a small size can be obtained.
- the wide band gap semiconductor can operate at high speed or at high temperature (for example, 200 ° C.), it is possible to improve the efficiency of the entire apparatus by high speed operation and to operate at high temperature.
- the cooling structure can be simplified, and the size of the apparatus can be reduced.
- an element such as a capacitor is used in addition to the semiconductor.
- a snubber circuit is used as a protection circuit to suppress the surge voltage.
- a snubber circuit having a capacitor is used. JP 2000-224867 A
- the wide band gap semiconductor can operate at a high speed or at a high temperature (for example, 200 ° C.). Therefore, the high speed operation can improve the efficiency of the power conversion device, and even under a high temperature condition. It is thought that it can be operated.
- the above snubber circuit When operating at high speed, the above snubber circuit must be placed as close as possible to the switching element.
- a switching element using a wide band gap semiconductor hereinafter also referred to as a SiC switching element
- SiC switching element performs switching at a higher speed than a conventional Si semiconductor switching element, and suppresses the surge voltage to the same level as before.
- it is necessary to reduce the inductance of the wiring Specifically, it is necessary to make it closer than the distance between the switching element and the snubber circuit in the power converter using the conventional Si semiconductor element.
- the allowable temperature of a general capacitor is about 150 ° C., which is lower than the operating temperature of the SiC switching element. Therefore, if a snubber circuit having a capacitor is disposed in the vicinity of the SiC switching element, the SiC switching element Heating may cause the operating temperature of the snubber circuit to exceed its allowable temperature. Although it is conceivable to use the switching element in a temperature range that does not exceed the allowable temperature of the snubber circuit, it is necessary to take measures such as increasing the element capacity to reduce the amount of heat generation. Further, if the switching speed is decreased to reduce the surge voltage, the switching loss increases, resulting in an increase in the size of the cooling structure and an increase in cost. That is, to realize high-speed operation, it is considered that the snubber circuit and the switching element must be arranged so close that they cannot be insulated.
- the present invention has been made paying attention to the above-described problem, and has an object to allow a snubber circuit to be disposed close to a switching element having an operating temperature higher than that of a Si semiconductor switching element.
- the first invention is A switching element (130) configured to be capable of high-temperature operation is provided, and AC power supplied from an AC power source or DC power supplied from a DC power source is converted into AC power or DC power having a predetermined voltage and frequency.
- a power converter, A snubber circuit (300) configured to be capable of high-temperature operation is provided with a capacitor (301) configured to be capable of high-temperature operation.
- snubber circuit (300) This enables the snubber circuit (300) to operate at a high temperature (for example, a temperature equal to or higher than the operating temperature of the switching element (130)).
- the switching element (130) has an operating temperature of 150 ° C. or higher.
- the switching element (130) is a semiconductor device whose main material is a wide band gap semiconductor.
- the switching element (130) composed of the wide band gap semiconductor performs the switching operation.
- the fourth invention is In any one of the power converters of the first invention to the third invention,
- the snubber circuit (300) has an allowable temperature of 150 ° C. or higher.
- the capacitor (301) of the snubber circuit (300) is formed of a ceramic capacitor.
- the capacitor (301) of the snubber circuit (300) is constituted by a film capacitor using a high heat-resistant material as a derivative material.
- the snubber circuit (300) includes a diode whose main material is a wide band gap semiconductor.
- the wide band gap semiconductor is any one of silicon carbide, gallium nitride, and diamond.
- the diode of the switching element (130) or the snubber circuit (300) is composed of a wide band gap semiconductor to perform switching operation or suppress surge voltage.
- a plurality of the switching elements (130) are connected in series to form a series circuit (170), A plurality of the series circuits (170) are arranged in parallel, The snubber circuit (300) is arranged for each series circuit (170).
- the tenth aspect of the invention is In any one of the power converters of the first invention to the ninth invention, The snubber circuit (300) is arranged for each switching element (130).
- the eleventh invention In any one of the power converters of the first invention to the tenth invention, The switching element (130) and the snubber circuit (300) are arranged in the same package.
- the twelfth invention In any one of the power converters of the first invention to the eleventh invention, The switching element (130) and the snubber circuit (300) are arranged on the same substrate.
- the switching element (130) and the snubber circuit (300) are arranged close to each other.
- the thirteenth invention In the power converter of the eleventh invention or the twelfth invention, The switching element (130) is directly connected to a terminal of the snubber circuit (300).
- All terminals of the snubber circuit (300) electrically connected to the switching element (130) are The switching element (130), Or a wiring member directly connected to the switching element (130), Or a wiring member directly connected via the switching element (130) and the heat spreader (510), It is characterized by being directly connected.
- the switching element (130) and the terminal of the snubber circuit (300) connected to the switching element (130) are arranged close to each other.
- a compression mechanism (50) that compresses the refrigerant, a drive motor (40) that drives the compression mechanism (50), and the compression mechanism (50) and the drive motor (40) are housed and filled with the refrigerant.
- the drive motor (40) in the compressor (20) including the casing (30) is driven.
- the snubber circuit (300) can operate at a high temperature (for example, a high temperature equal to or higher than the operating temperature of the switching element (130)).
- the compression mechanism (50) is configured to discharge high-pressure refrigerant into the casing (30), and the casing (30) is discharged to discharge the high-pressure refrigerant therein to the outside of the casing (30).
- a pipe (35) is connected.
- the seventeenth invention In the power conversion device of the fifteenth invention or the sixteenth invention, the snubber circuit (300) and the switching element (130) are disposed in the casing (30).
- the eighteenth invention In any one of the fifteenth to seventeenth aspects of the power conversion device,
- the drive motor (40) includes a stator core portion (42a) fixed to the inner wall of the casing (30), and an insulating portion (42c) formed on an axial end surface of the stator core portion (42a).
- the switching element (130) and the snubber circuit (300) are supported by the insulating part (42c).
- the nineteenth invention In any one of the fifteenth to eighteenth aspects of the power conversion device,
- the switching element (130) and the snubber circuit (300) are arranged between the compression mechanism (50) and the discharge pipe (35).
- the compressor (20) is connected to a heat pump circuit including a refrigerant circuit (10) that performs a refrigeration cycle by circulating the refrigerant.
- the high-pressure refrigerant in the casing (30) cools the snubber circuit (300) and the switching element (130) of the power converter for driving the drive motor.
- a power conversion device comprising a switching element (130), which converts AC power supplied from an AC power source or DC power supplied from a DC power source into AC power or DC power having a predetermined voltage and frequency, A snubber circuit (300) having a capacitor (301); All terminals of the snubber circuit (300) electrically connected to the switching element (130) are The switching element (130), Or a wiring member directly connected to the switching element (130), Or a wiring member directly connected via the switching element (130) and the heat spreader (510), It is characterized by being directly connected.
- the switching element (130) and the terminal of the snubber circuit (300) connected to the switching element (130) are arranged close to each other.
- the snubber circuit (300) can operate at a high temperature (for example, a high temperature equal to or higher than the operating temperature of the switching element (130)), the snubber circuit is close to the switching element (130). (300) can be placed. As a result, the wiring inductance can be reduced, and the high-speed operation of the power converter can be realized.
- the power conversion device can be operated at 150 ° C. or higher.
- the switching element (130) can perform a high-speed switching operation at a high temperature.
- the snubber circuit (300) since the snubber circuit (300) operates at 150 ° C. or higher, the snubber circuit (300) can be used for a power conversion device that operates in an atmosphere of 150 ° C. or higher.
- power conversion can be performed at a predetermined temperature or higher (for example, 150 ° C. or higher).
- the diode of the switching element (130) or the snubber circuit (300) is composed of a wide band gap semiconductor, in the power conversion device, a temperature equal to or higher than a predetermined temperature (for example, (150 ° C. or higher) enables efficient power conversion.
- the switching element (130) and the snubber circuit (300) are arranged close to each other, the switching element (130) and the snubber circuit (300) are not connected.
- the wiring inductance can be reduced.
- the high-speed operation of the power conversion device can be realized, so that the operation efficiency of the compressor is improved.
- the switching element (130) and the snubber circuit (300) are arranged close to each other, it is possible to reduce the wiring inductance and the like. High-speed operation can be realized. Furthermore, since the high-pressure refrigerant in the casing (30) cools the snubber circuit (300) and the switching element (130) of the power converter for driving the drive motor (40), the power converter (that is, more efficiently) An air conditioner) can be operated.
- the switching element (130) and the snubber circuit (300) are arranged close to each other, the wiring inductance between the switching element (130) and the snubber circuit (300) is reduced. it can.
- FIG. 1 is a diagram illustrating the configuration of the power conversion device according to the first embodiment.
- FIG. 2 is a diagram showing the concept of wiring length.
- 3A to 3F are other configuration examples of the snubber circuit.
- FIG. 4 is a diagram showing a configuration of the power conversion device when a snubber circuit is provided for each phase of the switching element (130).
- FIG. 5 is a piping diagram of a refrigerant circuit of the heat pump device according to the second embodiment.
- FIG. 6 is a longitudinal sectional view illustrating a schematic configuration of the fluid machine according to the second embodiment.
- FIG. 7A is a diagram illustrating a circuit in the case where a snubber circuit is provided for each series circuit, and FIG.
- FIG. 7B is a diagram illustrating the arrangement of switching elements and snubber circuits on a chip. It is a figure which shows an example of the structure of MOSFET of a vertical structure, FIG. 8A is DiMOSFET and FIG. 8B is UMOSFET.
- FIG. 9 is a diagram showing another arrangement example of the switching element and the snubber circuit on the chip when a snubber circuit is provided for each series circuit.
- FIG. 10 is a diagram showing still another arrangement example of the switching element and the snubber circuit on the chip when a snubber circuit is provided for each series circuit.
- FIG. 11A is a diagram illustrating a circuit in the case where a snubber circuit is provided for each switching element, and FIG.
- FIG. 11B is a diagram illustrating the arrangement of the switching elements and the snubber circuit on a chip.
- FIG. 12 is a diagram showing another arrangement example of the switching element and the snubber circuit on the chip when a snubber circuit is provided for each switching element.
- FIG. 13A is a circuit example when a snubber circuit is arranged for each switching element
- FIG. 13B is a diagram for explaining the arrangement of the switching elements and the snubber circuit on a chip.
- FIG. 14 is a diagram showing another arrangement example of the switching element and the snubber circuit on the chip when a snubber circuit is arranged for each switching element.
- FIG. 12 is a diagram showing another arrangement example of the switching element and the snubber circuit on the chip when a snubber circuit is arranged for each switching element.
- FIG. 15 is a diagram showing still another arrangement example of the switching element and the snubber circuit on the chip when the snubber circuit is arranged for each switching element.
- FIG. 16 is a diagram illustrating an example of the chip structure of the snubber circuit.
- Embodiment 1 of the Invention The structure of the power converter device which concerns on Embodiment 1 of this invention is shown in FIG.
- This power conversion device (100) includes a smoothing capacitor (150) and an inverter circuit (120), and the inverter circuit (120) controlled by the control device (430) receives the direct current input from the direct current power source (410). This is converted into a three-phase AC and supplied to the three-phase AC motor (420).
- the three-phase AC motor (420) drives a compressor provided in the refrigerant circuit of the air conditioner.
- the DC power supply (410) can be configured by a converter circuit that rectifies an AC power supply such as a commercial AC power supply.
- Smoothing capacitor (150) is a capacitor that smoothes the voltage of the DC power supply.
- an electrolytic capacitor can be used as the smoothing capacitor (150). Since the allowable temperature of the electrolytic capacitor is about 100 ° C., in this embodiment, the smoothing capacitor (150) is insulated from the inverter circuit (120).
- the inverter circuit (120) includes a switching element (130), a drive circuit (140), and a snubber circuit (300). Each of these components is composed only of components that can operate at 150 ° C. or higher.
- each switching element (130) is configured by a switching element using a wide band gap semiconductor (here, SiC MOSFET and SiC diode).
- a wide band gap semiconductor here, SiC MOSFET and SiC diode.
- the wide band gap semiconductor include gallium nitride (GaN) and diamond in addition to SiC (silicon carbide).
- the maximum operating temperature of the conventional Si semiconductor is 150 ° C., but the maximum operating temperature of the wide band gap semiconductor is higher than that of the Si semiconductor.
- the maximum operating temperature of a wide band gap semiconductor is 150 ° C. or higher. Therefore, the maximum value of the operating temperature of the switching element (130) using the wide band gap semiconductor as in this embodiment is 150 ° C. or more.
- each switching element (130) includes a transistor (131) and a free wheeling diode (132).
- the drive circuit (140) is provided corresponding to each switching element (130). That is, six drive circuits (140) are also provided in the inverter circuit (120). Each drive circuit (140) switches on / off by controlling the gate potential of the transistor (131) in the corresponding switching element (130) under the control of the control device (430).
- the snubber circuit (300) is a circuit that suppresses a surge voltage generated in the inverter circuit (120), and is configured by a capacitor (301) in the present embodiment.
- the snubber circuit (300) is electrically connected between the two input terminals of the inverter circuit (120). Further, the snubber circuit (300) and the inverter circuit (120) are arranged close to each other. These distances need to be closer than the distance between the inverter circuit (120) and the snubber circuit (300) in the power converter using the conventional Si semiconductor element. In such an arrangement, it is generally considered that the arrangement is so close that heat insulation cannot be performed.
- the wiring inductance is 10 nH or less (including a shunt resistor for current detection) and the switching speed is 200 ns. Based on this example, the arrangement in this embodiment is studied. View.
- a switching element composed of a SiC semiconductor can be switched at a speed 10 times or more that of a switching element using Si.
- the wiring inductance In order to perform the high-speed switching by configuring the switching element (130) with a SiC semiconductor and further suppress the surge voltage due to the wiring inductance to the same level as the conventional one, it is necessary to reduce the wiring inductance. For example, in order to achieve a switching speed 10 times that of the current level, the wiring inductance needs to be 1 nH or less.
- the relationship between the wiring length (distance between the snubber circuit and the switching element as shown in FIG. 2), the wiring diameter, and the wiring inductance has the following relationship.
- the wire diameter becomes too large.
- the wiring length (distance between the snubber circuit and the switching element) is 5 mm or more.
- the wiring inductance is 4.5 nH from the above formula.
- a diameter of 10 mm or more is required.
- the wiring inductance when allowing up to 100 V as a surge voltage when switching a current of 10 A at a switching speed of 1 ns needs to be 10 nH or less as can be seen from the following equation.
- the wiring inductance of the wiring length of 9 mm and the diameter of 2 mm is 10.2 nH, and the switching element and the snubber circuit need to be disposed within at least 9 mm.
- the inductance included in the bonding wire and snubber circuit also affects the surge voltage, so it must be placed closer.
- the capacitor (301) employs a capacitor whose allowable temperature is equal to or higher than the operating temperature of the switching element (130).
- the allowable temperature of the capacitor (301) is, for example, 150 ° C. or higher. Is considered desirable.
- a capacitor capable of operating at a high temperature for example, a ceramic capacitor or a film capacitor using a high heat-resistant material as a derivative material can be considered.
- high heat-resistant materials include polyamide (PA), polyamideimide (PAI), polyarylate (PAR), polyimide (PI), polyetherimide (PEI), polyetheretherketone (PEEK), polyethersulfone. (PES), polysulfone (PSF), polyphenylene sulfide (PPS), polybenzimidazole (PBI), liquid crystal polymer (LCP), and the like are considered.
- control device (430) controls the on / off of each switching element (130) via each drive circuit (140).
- the control device (430) is arranged to be insulated from the power conversion device (100).
- the capacitor (301) in the snubber circuit (300) can be operated at a high temperature (in the above example, an allowable temperature higher than the operating temperature of the switching element (130)). Therefore, the snubber circuit (300) can be disposed close to the switching element (130), which is an SiC switching element (the operating temperature is higher than that of the Si semiconductor switching element). Therefore, the wiring inductance can be reduced, and the high-speed operation of the inverter circuit (120) (that is, the high-speed operation of the power converter (100)) can be realized.
- FIG. 4 is an example in which a snubber circuit is provided for each phase of the switching element (130).
- the snubber circuit shown in FIG. 3B is used as these snubber circuits.
- the drive circuit and the like are omitted.
- each component is composed only of components that can operate at 150 ° C. or higher.
- phase refers to a portion where the switching elements (130) are connected in series (series circuit (170) in FIG. 4).
- series circuit (170) in FIG. 4
- Embodiment 3 of the Invention demonstrates the example which uses a power converter device for a heat pump apparatus.
- the heat pump device constitutes an air conditioner (1) that performs switching between indoor cooling and heating.
- the air conditioner (1) includes a refrigerant circuit (10).
- the refrigerant circuit (10) is filled with a chlorofluorocarbon refrigerant as a refrigerant.
- a refrigerant is circulated to perform a vapor compression refrigeration cycle.
- the refrigerant circuit (10) is connected to a compressor (20), an indoor heat exchanger (21), an expansion valve (22), an outdoor heat exchanger (23), and a four-way switching valve (24).
- the compressor (20) of Embodiment 3 is a rotary type compressor and constitutes the fluid machine of the present invention. Details of the compressor (20) will be described later.
- the indoor heat exchanger (21) is installed indoors. In the indoor heat exchanger (21), heat is exchanged between the refrigerant and the room air.
- the outdoor heat exchanger (23) is installed outdoors. In the outdoor heat exchanger (23), heat is exchanged between the refrigerant and the outdoor air.
- the expansion valve (22) is a pressure reducing means for reducing the pressure of the refrigerant, and is constituted by, for example, an electronic expansion valve.
- the four-way selector valve (24) has four ports from first to fourth.
- the four-way switching valve (24) has a first port on the discharge side of the compressor (20), a second port on the indoor heat exchanger (21), a third port on the suction side of the compressor (20), The fourth port is connected to the outdoor heat exchanger (23).
- the four-way switching valve (24) includes a state in which the first port and the second port are connected and at the same time the third port and the fourth port are connected (indicated by the solid line in FIG. 5), the first port and the fourth port. At the same time that the second port and the third port are connected to each other (the state indicated by the broken line in FIG. 5).
- the compressor (20) includes a hollow and sealed casing (30).
- the casing (30) includes a cylindrical barrel (31), a top plate (32) provided at the upper end of the barrel (31), and a bottom plate (33) provided at the lower end of the barrel (31). ).
- the suction pipe (34) is connected to the lower side of the body part (31)
- the discharge pipe (35) is connected to the top plate part (32).
- the discharge pipe (35) penetrates the top plate part (32) up and down, and the lower end thereof opens into the internal space of the casing (30).
- the casing (30) is made of a metal material such as iron.
- a drive motor (40), a drive shaft (45), and a compression mechanism (50) are accommodated.
- the drive motor (40) is arranged in the space near the top in the casing (30).
- the drive motor (40) includes a rotor (41) and a stator (42).
- the rotor (41) is fixed around the drive shaft (45).
- the stator (42) is provided on the outer peripheral side of the rotor (41).
- the stator (42) includes a stator core portion (42a) that is fixed to the inner wall of the body portion (31) of the casing (30), and coil portions that are respectively provided on the upper side and the lower side of the stator core portion (42a). 42b).
- the stator core portion (42a) is provided with insulators (42c) on both upper and lower end surfaces in the axial direction.
- the insulator (42c) is made of an insulating material and constitutes an insulating part for insulating the stator core part (42a) and the coil part (42b).
- the drive shaft (45) is formed by extending the axis of the casing (30) in the vertical direction.
- the drive shaft (45) is formed with an eccentric portion (46) at a lower portion.
- the eccentric part (46) has a larger diameter than the drive shaft (45) and is eccentric by a predetermined amount from the axis of the drive shaft (45).
- the drive shaft (45) is provided with an oil pump (47) at its lower end.
- the oil pump (47) has a structure for pumping up oil accumulated at the bottom of the casing (30) by centrifugal force.
- the oil pumped up by the oil pump (47) is passed through an oil supply passage (not shown) formed in the drive shaft (45) to the interior of the compression mechanism (50), the bearing of the drive shaft (45), etc. Supplied to the sliding part.
- the compression mechanism (50) is arranged in a space near the lower part in the casing (30).
- the compression mechanism (50) includes a cylinder (51), a front head (52), a rear head (53), and a piston (54).
- the cylinder (51) is formed in an annular shape, and its outer peripheral surface is fixed to the inner wall of the casing (30).
- a cylindrical cylinder chamber (55) is formed inside the cylinder (51).
- the cylinder (51) is formed with a suction passage (51a) extending in the radial direction.
- the suction passage (51a) connects the cylinder chamber (55) and the suction pipe (34).
- the front head (52) is attached to the upper side of the cylinder (51), and the rear head (53) is attached to the lower side of the cylinder (51).
- the front head (52) closes the upper end opening of the cylinder chamber (55), and the rear head (53) closes the lower end opening of the cylinder chamber (55).
- the front head (52) is provided with an upper bearing (56), and the rear head (53) is provided with a lower bearing (57).
- the drive shaft (45) is rotatably supported by the upper bearing (56) and the lower bearing (57) while penetrating the front head (52) and the rear head (53).
- the front head (52) is formed with a discharge port (52a) that allows the cylinder chamber (55) and the internal space of the casing (30) to communicate with each other.
- the discharge port (52a) is provided with a discharge valve (not shown).
- a muffler muffler (58) is attached to the front head (52) so as to cover the discharge port (52a).
- the piston (54) is disposed in the cylinder chamber (55).
- the eccentric part (46) is fitted into the piston (54).
- the piston (54) rotates in the cylinder chamber (55) while being eccentric from the axis of the drive shaft (45).
- the compression mechanism (50) the volume of the compression chamber formed in the cylinder chamber (55) is changed, and the refrigerant is compressed.
- the compression mechanism (50) is configured to discharge high-pressure (eg, 120 ° C.) high-pressure refrigerant after compression into the casing (30) via the discharge port (52a). That is, the compressor (20) of the third embodiment constitutes a so-called high pressure dome type compressor in which the internal space of the casing (30) is filled with the high pressure refrigerant.
- high-pressure eg, 120 ° C.
- the compressor (20) includes a power conversion device (60) for driving and controlling the drive motor (40).
- the power conversion device (60) is the power conversion device according to any one of the above embodiments.
- the power conversion device (60) is provided on the upper portion of the casing (30).
- the power converter (60) has a substrate (61), and a switching element (130) and a snubber circuit (300) are installed on the substrate (61).
- the switching element (130) and the snubber circuit (300) are disposed in the space between the compression mechanism (50) and the discharge pipe (35).
- electromagnetic noise from the power converter can be insulated by the casing (30).
- the overall size of the air conditioner (1) can be reduced.
- the switching element (130) and the snubber circuit (300) are arranged close to each other, the wiring inductance can be reduced and the high-speed operation of the power converter can be realized.
- the power converter that is, the air conditioner
- the power converter can be operated more efficiently in the power converter.
- the distance from the coil part (42b) of the drive motor (40) to the inverter circuit (120) can be shortened by attaching the switching element (130) and the snubber circuit (300) to the insulator (42c). That is, in this modification, the length of the wiring connecting the inverter circuit (120) and the coil part (42b) can be shortened.
- Embodiment 4 of the Invention an example in which the snubber circuit (300) and the switching element (130) are configured in the same package (transfer mold or the like) will be described. By incorporating these into the same package, the influence of wiring inductance can be further reduced.
- all terminals of the snubber circuit (300) electrically connected to the switching element (130) are connected to the switching element (130) or the wiring member directly connected to the switching element (130), Or it is directly connected with the wiring member directly connected via the switching element (130) and the heat spreader.
- the wiring member include a bonding wire, a lead frame, a wiring pattern, and a heat spreader.
- the terminal of the snubber circuit (300) corresponds to, for example, the lead wire of the capacitor or the external electrode in the snubber circuit shown in FIG. 3A, and in the snubber circuit example in FIG.
- the lead wires and electrodes the lead wires and electrodes electrically connected to the switching elements are applicable.
- the terminals P, U, and N (external electrodes) in FIG. 7A correspond to the wiring patterns P, U, and N in FIG. 7B, respectively.
- a SiC MOSFET is used as the switching element (130).
- this SiC MOSFET has a vertical structure. Specifically, as shown in FIGS. 8A and 8B, the upper surface of the chip of the switching element is the source and the back surface is the drain.
- FIG. 8A is a DiMOSFET
- FIG. 8B is a UMOSFET.
- the snubber circuit (300) is directly connected to the wiring patterns P and N.
- Each switching element (130) is connected to the wiring patterns P and U via the heat spreader (510), respectively.
- FIG. 9 is also an example of a chip arrangement when a snubber circuit (300) is provided for each phase (each series circuit) of the inverter circuit (120) (see FIG. 7A).
- the snubber circuit (300) is directly connected to the wiring pattern P, is connected to the wiring pattern N by the bonding wire (520), and is further connected to the switching element (130) on the wiring pattern U side.
- the switching element (130) on the wiring pattern P side and the heat spreader (510) on the wiring pattern U side are also connected by a bonding wire (520).
- FIG. 10 is also an example of a chip arrangement when a snubber circuit (300) is provided for each phase (each series circuit) of the inverter circuit (120). Also in this example, each switching element (130) is arranged via the heat spreader (510). The snubber circuit (300) is arranged on the same heat spreader (510) as the switching element (130) on the wiring pattern P side. In this example, between the snubber circuit (300) and the wiring pattern N, between the snubber circuit (300) and the switching element (130) on the wiring pattern U side, the switching element (130) on the wiring pattern P side and the wiring pattern U side. The heat spreader (510) is connected by a bonding wire (520).
- each switching element (130) for example, an inverter circuit (120) and a snubber circuit (300) are arranged as shown in FIG. 11B.
- one snubber circuit (300) is directly connected to the wiring pattern P
- the other snubber circuit (300) is directly connected to the wiring pattern U.
- each switching element (130) is connected to the wiring patterns P and U via the heat spreader (510), and is connected to the corresponding snubber circuit (300) and the bonding wire (520). .
- the bonding wire (520) is connected between the snubber circuit (300) on the wiring pattern U side and the wiring pattern N, and between the switching element (130) on the wiring pattern P side and the heat spreader (510) on the wiring pattern U side. Connected by.
- FIG. 12 is also an example in which a snubber circuit (300) is provided for each switching element (130).
- the switching element (130) and the corresponding snubber circuit (300) are arranged on a common heat spreader (510).
- Each switching element (130) is connected to a corresponding snubber circuit (300) by a bonding wire (520).
- the bonding wire (520) is connected between the snubber circuit (300) on the wiring pattern U side and the wiring pattern N, and between the switching element (130) on the wiring pattern P side and the heat spreader (510) on the wiring pattern U side. Connected by.
- the circuit shown in FIG. 13A is an example in which a snubber circuit (300) is arranged for each switching element (130).
- a snubber circuit (300) is arranged for each switching element (130).
- an inverter circuit (120) and a snubber circuit (300) are arranged.
- the snubber circuit (300) is directly connected to the wiring patterns P, U, and N, respectively.
- Each switching element (130) is connected to the wiring patterns P and U via the heat spreader (510), respectively. Further, between the switching element (130) on the wiring pattern P side and the heat spreader (510) on the wiring pattern U side, and between the switching element (130) on the wiring pattern U side and the snubber circuit (300), bonding wires (520 ).
- FIG. 14 is also an example when a snubber circuit (300) is arranged for each switching element (130). Also in this example, each switching element (130) is connected to the wiring patterns P and U via the heat spreader (510), respectively. The switching element (130) on the wiring pattern P side and the heat spreader (510) on the wiring pattern U side are connected by a bonding wire (520). On the other hand, the snubber circuit (300) is directly connected to the wiring patterns P and U, respectively, and the wiring pattern N and the switching element (130) on the wiring pattern U side are connected by bonding wires (520), respectively. It is connected.
- FIG. 15 is also an example in which a snubber circuit (300) is arranged for each switching element (130). Also in this example, each switching element (130) is connected to the wiring patterns P and U via the heat spreader (510), respectively. The switching element (130) on the wiring pattern P side and the heat spreader (510) on the wiring pattern U side are connected by a bonding wire (520). The snubber circuit (300) in this example is connected to the wiring patterns P and U via the heat spreader (510) for each switching element (130). That is, each switching element (130) and the heat spreader (510) are shared. The snubber circuit (300) and the wiring pattern N are connected by a bonding wire (520).
- the chip structure shown in FIG. 16 is an example.
- the resistor (602a) in contact with the external electrode (601) constitutes the resistor (602).
- a derivative (603b) is provided between the internal electrode (603a) and the external electrode (604) each formed in a comb shape, and a capacitor (603) is provided between the internal electrode (603a) and the external electrode (604). Is configured.
- the resistor (602) resistor (602a)
- the capacitor (603) are surrounded by a protective film (605) from both sides.
- the external electrode (601) and the external electrode (604) are the terminals of the snubber circuit connected to the switching element (130).
- the switching element and the snubber circuit can be arranged close to each other, and the wiring inductance can be minimized.
- the present invention is useful as a power conversion device having a switching element.
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Abstract
Description
高温動作可能に構成されたスイッチング素子(130)を備えて、交流電源から供給された交流電力または直流電源から供給された直流電力を所定の電圧及び周波数の交流電力または直流電力に電力変換を行う電力変換装置であって、
高温動作可能に構成されたコンデンサ(301)を有した高温動作可能に構成されたスナバ回路(300)を備えていることを特徴とする。
第1の発明の電力変換装置において、
前記スイッチング素子(130)は、動作温度が150℃以上であることを特徴とする。
第1の発明又は第2の発明の電力変換装置において、
前記スイッチング素子(130)は、ワイドバンドギャップ半導体を主材料とした半導体ディバイスであることを特徴とする。
第1の発明から第3の発明のうちの何れか1つの電力変換装置において、
前記スナバ回路(300)は、許容温度が150℃以上であることを特徴とする。
第4の発明の電力変換装置において、
前記スナバ回路(300)のコンデンサ(301)は、セラミックコンデンサにより構成されていることを特徴とする。
第4の発明の電力変換装置において、
前記スナバ回路(300)のコンデンサ(301)は、誘導体材料として高耐熱材料を用いたフィルムコンデンサにより構成されていることを特徴とする。
第1の発明から第6の発明のうちの何れか1つの電力変換装置において、
前記スナバ回路(300)は、ワイドバンドギャップ半導体を主材料としたダイオードを備えていることを特徴とする。
第3の発明又は第7の発明の電力変換装置において、
前記ワイドバンドギャップ半導体は、シリコンカーバイト、窒化ガリウム、及びダイヤモンドの何れかであることを特徴とする。
第1の発明から第8の発明のうちの何れか1つの電力変換装置において、
前記スイッチング素子(130)は、複数が直列に接続されて直列回路(170)を構成し、
前記直列回路(170)は、複数が並列に配置され、
前記スナバ回路(300)は、直列回路(170)毎に配置されていることを特徴とする。
第1の発明から第9の発明のうちの何れか1つの電力変換装置において、
前記スナバ回路(300)は、前記スイッチング素子(130)毎に配置されていることを特徴とする。
第1の発明から第10の発明のうちの何れか1つの電力変換装置において、
前記スイッチング素子(130)と前記スナバ回路(300)とは、同一パッケージ内に配置されていることを特徴とする。
第1の発明から第11の発明のうちの何れか1つの電力変換装置において、
前記スイッチング素子(130)とスナバ回路(300)とは、同一基板上に配置されていることを特徴とする。
第11の発明又は第12の発明の電力変換装置において、
前記スイッチング素子(130)は、前記スナバ回路(300)の端子と直接接続されていることを特徴とする。
第11の発明から第13の発明のうちの何れか1つの電力変換装置において、
前記スイッチング素子(130)と電気的に接続される、前記スナバ回路(300)の全ての端子は、
前記スイッチング素子(130)、
もしくは前記スイッチング素子(130)に直接接続された配線部材、
もしくは前記スイッチング素子(130)とヒートスプレッダ(510)を介して直接接続された配線部材と、
直接接続されていることを特徴とする。
第1の発明から第14の発明のうちの何れか1つの電力変換装置において、
冷媒を圧縮する圧縮機構(50)と、該圧縮機構(50)を駆動する駆動モータ(40)と、該圧縮機構(50)と駆動モータ(40)が収容されるとともに内部に冷媒が満たされるケーシング(30)からなる圧縮機(20)における、前記駆動モータ(40)を駆動することを特徴とする。
第15の発明の電力変換装置において、
前記圧縮機構(50)は、前記ケーシング(30)内に高圧冷媒を吐出するように構成され、該ケーシング(30)には、その内部の高圧冷媒を該ケーシング(30)の外部に流出させる吐出管(35)が接続されていることを特徴とする。
第15の発明又は第16の発明の電力変換装置において、
前記スナバ回路(300)及び前記スイッチング素子(130)は、前記ケーシング(30)内に配置されることを特徴とする。
第15の発明から第17の発明のうちの何れか1つの電力変換装置において、
前記駆動モータ(40)は、ケーシング(30)の内壁に固定される固定子コア部(42a)と、該固定子コア部(42a)の軸方向端面に形成される絶縁部(42c)とを有し、
前記スイッチング素子(130)と前記スナバ回路(300)とは、前記絶縁部(42c)に支持されていることを特徴とする。
第15の発明から第18の発明のうちの何れか1つの電力変換装置において、
前記スイッチング素子(130)と前記スナバ回路(300)とは、前記圧縮機構(50)と吐出管(35)との間に配置されていることを特徴とする。
第15の発明から第19の発明のうちの何れか1つの電力変換装置において、
前記圧縮機(20)は、冷媒が循環して冷凍サイクルを行う冷媒回路(10)を備えたヒートポンプ回路に接続されていることを特徴とする。
スイッチング素子(130)を備えて、交流電源から供給された交流電力または直流電源から供給された直流電力を所定の電圧及び周波数の交流電力または直流電力に電力変換を行う電力変換装置であって、
コンデンサ(301)を有したスナバ回路(300)を備え、
前記スイッチング素子(130)と電気的に接続される、前記スナバ回路(300)の全ての端子は、
前記スイッチング素子(130)、
もしくは前記スイッチング素子(130)に直接接続された配線部材、
もしくは前記スイッチング素子(130)とヒートスプレッダ(510)を介して直接接続された配線部材と、
直接接続されていることを特徴とする。
10 冷媒回路
20 圧縮機
30 ケーシング
35 吐出管
40 駆動モータ
42a 固定子コア部
42c インシュレータ(絶縁部)
50 圧縮機構
100 電力変換装置
130 スイッチング素子
170 直列回路
300 スナバ回路
301 コンデンサ
510 ヒートスプレッダ
520 ボンディングワイヤ
本発明の実施形態1に係る電力変換装置の構成を図1に示す。この電力変換装置(100)は、平滑コンデンサ(150)とインバータ回路(120)を備え、制御装置(430)に制御されたインバータ回路(120)が、直流電源(410)から入力された直流を三相交流に変換して三相交流モータ(420)に供給するものである。この三相交流モータ(420)は空気調和機の冷媒回路に設けられる圧縮機を駆動するものである。なお、直流電源(410)は、例えば商用交流電源等の交流電源を整流するコンバータ回路などによって構成できる。
なお、スナバ回路(300)としては、上記のコンデンサ(301)のみで構成したものの他に、例えば図3B~図Fに示す構成も採用できる。なお、図3Aには前記のコンデンサ(301)のみで構成したものを再掲している。これらの例では、コンデンサの他に、抵抗、ダイオードなどを含んでいるものがあるが、これらの構成部品は、何れも高温動作可能(例えばスイッチング素子(130)の動作温度と同等か、より高い温度で動作可能)に構成しておく。
図4は、スナバ回路をスイッチング素子(130)の相毎に設けた例である。この例では、これらのスナバ回路として、図3Bに示すスナバ回路を使用している。なお、この図では駆動回路などを省略している。このインバータ回路(120)においてもやはり、各構成要素は、150℃以上で動作可能な部品のみで構成してある。
本発明の実施形態3では、電力変換装置をヒートポンプ装置に使用する例を説明する。
冷媒回路(10)には、圧縮機(20)と室内熱交換器(21)と膨張弁(22)と室外熱交換器(23)と四路切換弁(24)とが接続されている。実施形態3の圧縮機(20)は、ロータリー型の圧縮機であり、本発明の流体機械を構成している。この圧縮機(20)の詳細は後述する。室内熱交換器(21)は、室内に設置されている。室内熱交換器(21)では、冷媒と室内空気との間で熱交換が行われる。室外熱交換器(23)は、室外に設置されている。室外熱交換器(23)では、冷媒と室外空気との間で熱交換が行われる。膨張弁(22)は、冷媒を減圧する減圧手段であり、例えば電子膨張弁で構成されている。四路切換弁(24)は、第1から第4までの4つのポートを備えている。四路切換弁(24)は、第1ポートが圧縮機(20)の吐出側と、第2ポートが室内熱交換器(21)と、第3ポートが圧縮機(20)の吸入側と、第4ポートが室外熱交換器(23)とそれぞれ繋がっている。四路切換弁(24)は、第1ポートと第2ポートとが繋がると同時に第3ポートと第4ポートとが繋がる状態(図5の実線で示す状態)と、第1ポートと第4ポートとが繋がると同時に第2ポートと第3ポートとが繋がる状態(図5の破線で示す状態)とに設定が切り換わるように構成されている。
図6に示すように、圧縮機(20)は、中空で密閉型のケーシング(30)を備えている。ケーシング(30)は、円筒状の胴部(31)と、胴部(31)の上端部に設けられる天板部(32)と、胴部(31)の下端部に設けられる底板部(33)とを備えている。ケーシング(30)では、胴部(31)の下側寄りに吸入管(34)が接続され、天板部(32)に吐出管(35)が接続されている。吐出管(35)は、天板部(32)を上下に貫通しており、その下端部がケーシング(30)の内部空間に開口している。なお、ケーシング(30)は、例えば鉄等の金属材料で構成されている。
圧縮機(20)は、上記駆動モータ(40)を駆動制御するための電力変換装置(60)を備えている。電力変換装置(60)は、上記の何れかの実施形態の電力変換装置である。
この変形例では、スイッチング素子(130)とスナバ回路(300)を絶縁部であるインシュレータ(42c)に支持させる。こうすることで、インシュレータ(42c)をスイッチング素子(130)とスナバ回路(300)の基板として利用することができる。また、スイッチング素子(130)とスナバ回路(300)から発生した熱は、インシュレータ(42c)を介して固定子コア部(42a)へ伝わるため、この熱は固定子コア部(42a)の周囲を流れる高圧冷媒に放出され易くなる。したがって、この変形例では、スイッチング素子(130)とスナバ回路(300)の冷却効果を更に高めることができる。
実施形態4では、スナバ回路(300)とスイッチング素子(130)とを同一パッケージ(トランスファモールドなど)にて構成した例を説明する。これらを同一パッケージに組み込むことで、配線インダクタンスの影響をより小さくすることができるようになる。
Claims (24)
- 高温動作可能に構成されたスイッチング素子(130)を備えて、交流電源から供給された交流電力または直流電源から供給された直流電力を所定の電圧及び周波数の交流電力または直流電力に電力変換を行う電力変換装置であって、
高温動作可能に構成されたコンデンサ(301)を有した高温動作可能に構成されたスナバ回路(300)を備えていることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スイッチング素子(130)は、動作温度が150℃以上であることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スイッチング素子(130)は、ワイドバンドギャップ半導体を主材料とした半導体ディバイスであることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スナバ回路(300)は、許容温度が150℃以上であることを特徴とする電力変換装置。 - 請求項4の電力変換装置において、
前記スナバ回路(300)のコンデンサ(301)は、セラミックコンデンサにより構成されていることを特徴とする電力変換装置。 - 請求項4の電力変換装置において、
前記スナバ回路(300)のコンデンサ(301)は、誘導体材料として高耐熱材料を用いたフィルムコンデンサにより構成されていることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スナバ回路(300)は、ワイドバンドギャップ半導体を主材料としたダイオードを備えていることを特徴とする電力変換装置。 - 請求項3の電力変換装置において、
前記ワイドバンドギャップ半導体は、シリコンカーバイト、窒化ガリウム、及びダイヤモンドの何れかであることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スイッチング素子(130)は、複数が直列に接続されて直列回路(170)を構成し、
前記直列回路(170)は、複数が並列に配置され、
前記スナバ回路(300)は、直列回路(170)毎に配置されていることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スナバ回路(300)は、前記スイッチング素子(130)毎に配置されていることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スイッチング素子(130)と前記スナバ回路(300)とは、同一パッケージ内に配置されていることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
前記スイッチング素子(130)と前記スナバ回路(300)とは、同一基板上に配置されていることを特徴とする電力変換装置。 - 請求項11の電力変換装置において、
前記スイッチング素子(130)は、前記スナバ回路(300)の端子と直接接続されていることを特徴とする電力変換装置。 - 請求項11の電力変換装置において、
前記スイッチング素子(130)と電気的に接続される、前記スナバ回路(300)の全ての端子は、
前記スイッチング素子(130)、
もしくは前記スイッチング素子(130)に直接接続された配線部材、
もしくは前記スイッチング素子(130)とヒートスプレッダ(510)を介して直接接続された配線部材と、
直接接続されていることを特徴とする電力変換装置。 - 請求項1の電力変換装置において、
冷媒を圧縮する圧縮機構(50)と、該圧縮機構(50)を駆動する駆動モータ(40)と、該圧縮機構(50)と駆動モータ(40)が収容されるとともに内部に冷媒が満たされるケーシング(30)からなる圧縮機(20)における、前記駆動モータ(40)を駆動することを特徴とする電力変換装置。 - 請求項15の電力変換装置において、
前記圧縮機構(50)は、前記ケーシング(30)内に高圧冷媒を吐出するように構成され、該ケーシング(30)には、その内部の高圧冷媒を該ケーシング(30)の外部に流出させる吐出管(35)が接続されていることを特徴とする電力変換装置。 - 請求項15の電力変換装置において、
前記スナバ回路(300)及び前記スイッチング素子(130)は、前記ケーシング(30)内に配置されることを特徴とする電力変換装置。 - 請求項15の電力変換装置において、
前記駆動モータ(40)は、ケーシング(30)の内壁に固定される固定子コア部(42a)と、該固定子コア部(42a)の軸方向端面に形成される絶縁部(42c)とを有し、
前記スイッチング素子(130)と前記スナバ回路(300)とは、前記絶縁部(42c)に支持されていることを特徴とする電力変換装置。 - 請求項15の電力変換装置において、
前記スイッチング素子(130)と前記スナバ回路(300)とは、前記圧縮機構(50)と吐出管(35)との間に配置されていることを特徴とする電力変換装置。 - 請求項15の電力変換装置において、
前記圧縮機(20)は、冷媒が循環して冷凍サイクルを行う冷媒回路(10)を備えたヒートポンプ回路に接続されていることを特徴とする電力変換装置。 - スイッチング素子(130)を備えて、交流電源から供給された交流電力または直流電源から供給された直流電力を所定の電圧及び周波数の交流電力または直流電力に電力変換を行う電力変換装置であって、
コンデンサ(301)を有したスナバ回路(300)を備え、
前記スイッチング素子(130)と電気的に接続される、前記スナバ回路(300)の全ての端子は、
前記スイッチング素子(130)、
もしくは前記スイッチング素子(130)に直接接続された配線部材、
もしくは前記スイッチング素子(130)とヒートスプレッダ(510)を介して直接接続された配線部材と、
直接接続されていることを特徴とする電力変換装置。 - 請求項7の電力変換装置において、
前記ワイドバンドギャップ半導体は、シリコンカーバイト、窒化ガリウム、及びダイヤモンドの何れかであることを特徴とする電力変換装置。 - 請求項12の電力変換装置において、
前記スイッチング素子(130)は、前記スナバ回路(300)の端子と直接接続されていることを特徴とする電力変換装置。 - 請求項13の電力変換装置において、
前記スイッチング素子(130)と電気的に接続される、前記スナバ回路(300)の全ての端子は、
前記スイッチング素子(130)、
もしくは前記スイッチング素子(130)に直接接続された配線部材、
もしくは前記スイッチング素子(130)とヒートスプレッダ(510)を介して直接接続された配線部材と、
直接接続されていることを特徴とする電力変換装置。
Priority Applications (4)
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EP09720739.3A EP2259419A4 (en) | 2008-03-11 | 2009-03-10 | Power conversion device |
US12/918,656 US20100328975A1 (en) | 2008-03-11 | 2009-03-10 | Power converter |
CN2009801081681A CN101965677A (zh) | 2008-03-11 | 2009-03-10 | 电力转换装置 |
AU2009222852A AU2009222852B2 (en) | 2008-03-11 | 2009-03-10 | Power converter |
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JP2008061163A JP2009219268A (ja) | 2008-03-11 | 2008-03-11 | 電力変換装置 |
JP2008-061163 | 2008-03-11 |
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WO2009113298A1 true WO2009113298A1 (ja) | 2009-09-17 |
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PCT/JP2009/001068 WO2009113298A1 (ja) | 2008-03-11 | 2009-03-10 | 電力変換装置 |
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US (1) | US20100328975A1 (ja) |
EP (1) | EP2259419A4 (ja) |
JP (1) | JP2009219268A (ja) |
KR (1) | KR20100122949A (ja) |
CN (1) | CN101965677A (ja) |
AU (1) | AU2009222852B2 (ja) |
WO (1) | WO2009113298A1 (ja) |
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---|---|---|---|---|
JP2009219267A (ja) * | 2008-03-11 | 2009-09-24 | Daikin Ind Ltd | 電力変換装置 |
JP2011177005A (ja) * | 2010-01-26 | 2011-09-08 | Denso Corp | スイッチング装置 |
US20130016542A1 (en) * | 2010-03-31 | 2013-01-17 | Mitsubishi Electric Corporation | Electric power conversion device and surge voltage suppressing method |
US9124270B2 (en) * | 2010-03-31 | 2015-09-01 | Mitsubishi Electric Corporation | Electric power conversion device and surge voltage suppressing method |
CN102725914A (zh) * | 2010-04-07 | 2012-10-10 | 三菱电机株式会社 | 压配合端子及半导体装置 |
US20130182471A1 (en) * | 2010-07-28 | 2013-07-18 | Albrecht Schwarz | Overvoltage protection circuit for at least one branch of a half-bridge, inverter, dc/dc voltage converter and circuit arrangement for operating an electrical machine |
Also Published As
Publication number | Publication date |
---|---|
EP2259419A4 (en) | 2017-08-09 |
JP2009219268A (ja) | 2009-09-24 |
AU2009222852A1 (en) | 2009-09-17 |
US20100328975A1 (en) | 2010-12-30 |
CN101965677A (zh) | 2011-02-02 |
AU2009222852B2 (en) | 2014-01-23 |
EP2259419A1 (en) | 2010-12-08 |
KR20100122949A (ko) | 2010-11-23 |
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