WO2009044892A1 - 酸化インジウム系透明導電膜及びその製造方法 - Google Patents

酸化インジウム系透明導電膜及びその製造方法 Download PDF

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Publication number
WO2009044892A1
WO2009044892A1 PCT/JP2008/068101 JP2008068101W WO2009044892A1 WO 2009044892 A1 WO2009044892 A1 WO 2009044892A1 JP 2008068101 W JP2008068101 W JP 2008068101W WO 2009044892 A1 WO2009044892 A1 WO 2009044892A1
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Prior art keywords
indium oxide
transparent electroconductive
electroconductive film
film
based transparent
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Ceased
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PCT/JP2008/068101
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English (en)
French (fr)
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Seiichiro Takahashi
Norihiko Miyashita
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Mitsui Kinzoku Co Ltd
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Mitsui Mining and Smelting Co Ltd
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Priority to JP2008550298A priority Critical patent/JPWO2009044892A1/ja
Publication of WO2009044892A1 publication Critical patent/WO2009044892A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Conductive Materials (AREA)

Abstract

本発明は、酸化インジウム系透明導電膜及びその製造方法に関する。 酸化インジウム－酸化錫膜は、透明導電膜として、液晶表示装置等に用いられているが、アモルファスな膜とするのが困難であり、アモルファスな膜として、酸化インジウム－酸化亜鉛透明導電膜が知られているが、透明性に劣る等の問題があった。本発明は、酸化インジウム系透明導電膜を、酸化インジウムと錫を含有すると共にイットリウムを含有する酸化物焼結体を具備するスパッタリングターゲットを用いて成膜された透明導電膜であって、インジウム１モルに対しての錫のモル比が、インジウム１モルに対するイットリウムのモル比Ｘに対して、（－２．５×１０－２Ｌｎ（Ｘ）－５．８×１０－２）以上であり、かつ、（－１．０×１０－１Ｌｎ（Ｘ）－５．０×１０－２）以下の範囲にある、透明導電膜とすること等によって、上記問題の解決を図ったものである。　
PCT/JP2008/068101 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法 Ceased WO2009044892A1 (ja)

Priority Applications (1)

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JP2008550298A JPWO2009044892A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007260436 2007-10-03
JP2007-260436 2007-10-03

Publications (1)

Publication Number Publication Date
WO2009044892A1 true WO2009044892A1 (ja) 2009-04-09

Family

ID=40526308

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Application Number Title Priority Date Filing Date
PCT/JP2008/068099 Ceased WO2009044890A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068101 Ceased WO2009044892A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068098 Ceased WO2009044889A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068100 Ceased WO2009044891A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068102 Ceased WO2009044893A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068097 Ceased WO2009044888A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Family Applications Before (1)

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PCT/JP2008/068099 Ceased WO2009044890A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Family Applications After (4)

Application Number Title Priority Date Filing Date
PCT/JP2008/068098 Ceased WO2009044889A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット
PCT/JP2008/068100 Ceased WO2009044891A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068102 Ceased WO2009044893A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系透明導電膜及びその製造方法
PCT/JP2008/068097 Ceased WO2009044888A1 (ja) 2007-10-03 2008-10-03 酸化インジウム系ターゲット

Country Status (4)

Country Link
JP (6) JP5464319B2 (ja)
KR (6) KR101200386B1 (ja)
TW (6) TW200926207A (ja)
WO (6) WO2009044890A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013139380A (ja) * 2011-12-07 2013-07-18 Tosoh Corp 複合酸化物焼結体及び酸化物透明導電膜

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JP2011037679A (ja) * 2009-08-13 2011-02-24 Tosoh Corp 複合酸化物焼結体、スパッタリングターゲット、複合酸化物非晶質膜及びその製造方法、並びに、複合酸化物結晶質膜及びその製造方法
WO2011061922A1 (ja) * 2009-11-19 2011-05-26 株式会社アルバック 透明導電膜の製造方法、透明導電膜の製造装置、スパッタリングターゲット及び透明導電膜
CN102191465A (zh) * 2010-03-18 2011-09-21 中国科学院福建物质结构研究所 一种铟掺杂氧化锌靶材及透明导电膜的制备方法
KR101198786B1 (ko) 2010-06-30 2012-11-07 현대자동차주식회사 가변 압축비 장치
JP5367659B2 (ja) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
JP5367660B2 (ja) * 2010-08-31 2013-12-11 Ｊｘ日鉱日石金属株式会社 酸化物焼結体及び酸化物半導体薄膜
JP5817327B2 (ja) 2010-09-29 2015-11-18 東ソー株式会社 酸化物焼結体、その製造方法、それを用いて得られる酸化物透明導電膜及び太陽電池
US8932518B2 (en) 2012-02-29 2015-01-13 General Electric Company Mold and facecoat compositions
JP5996227B2 (ja) * 2012-03-26 2016-09-21 学校法人 龍谷大学 酸化物膜及びその製造方法
US9511417B2 (en) 2013-11-26 2016-12-06 General Electric Company Silicon carbide-containing mold and facecoat compositions and methods for casting titanium and titanium aluminide alloys
WO2025159034A1 (ja) * 2024-01-25 2025-07-31 ソニーグループ株式会社 親水性膜、反射防止膜、カメラ及び成膜方法

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Publication number Priority date Publication date Assignee Title
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Also Published As

Publication number Publication date
JPWO2009044892A1 (ja) 2011-02-10
KR20100063137A (ko) 2010-06-10
JPWO2009044891A1 (ja) 2011-02-10
WO2009044889A1 (ja) 2009-04-09
WO2009044893A1 (ja) 2009-04-09
TW200923115A (en) 2009-06-01
TW200926208A (en) 2009-06-16
JPWO2009044893A1 (ja) 2011-02-10
JPWO2009044888A1 (ja) 2011-02-10
JP5464319B2 (ja) 2014-04-09
TW200927658A (en) 2009-07-01
JP5237827B2 (ja) 2013-07-17
KR20100063135A (ko) 2010-06-10
KR20100063136A (ko) 2010-06-10
TW200926209A (en) 2009-06-16
WO2009044888A1 (ja) 2009-04-09
TW200926207A (en) 2009-06-16
TWI430956B (zh) 2014-03-21
JPWO2009044890A1 (ja) 2011-02-10
KR101200386B1 (ko) 2012-11-12
WO2009044890A1 (ja) 2009-04-09
WO2009044891A1 (ja) 2009-04-09
TWI461365B (zh) 2014-11-21
TW200927657A (en) 2009-07-01
KR20100071089A (ko) 2010-06-28
KR20100067118A (ko) 2010-06-18
KR20100071090A (ko) 2010-06-28
JPWO2009044889A1 (ja) 2011-02-10

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