WO2009001693A1 - アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体 - Google Patents

アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体 Download PDF

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WO2009001693A1
WO2009001693A1 PCT/JP2008/060861 JP2008060861W WO2009001693A1 WO 2009001693 A1 WO2009001693 A1 WO 2009001693A1 JP 2008060861 W JP2008060861 W JP 2008060861W WO 2009001693 A1 WO2009001693 A1 WO 2009001693A1
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Prior art keywords
composite oxide
oxide film
film
producing
amorphous
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PCT/JP2008/060861
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English (en)
French (fr)
Inventor
Masakatsu Ikisawa
Masataka Yahagi
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Nippon Mining & Metals Co., Ltd.
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Priority to KR1020147006910A priority Critical patent/KR20140041950A/ko
Priority to CN200880021931A priority patent/CN101688288A/zh
Priority to US12/666,306 priority patent/US8252206B2/en
Priority to KR1020167012721A priority patent/KR20160063403A/ko
Priority to JP2009520462A priority patent/JP4885274B2/ja
Publication of WO2009001693A1 publication Critical patent/WO2009001693A1/ja

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Abstract

　実質的にインジウム、スズ、マグネシウムおよび酸素からなり、スズがSn / (In + Sn + Mg )の原子数比で5～15％の割合、マグネシウムが、Mg / ( In + Sn + Mg )の原子数比で0.1～2.0％の割合で含有されており、残部がインジウムと酸素からなるアモルファス膜であって、かつ、260°C以下の温度でアニールすることによって、膜が結晶化して、膜の抵抗率が0.4mΩ以下となることを特徴とする膜。 　フラットパネルディスプレイ用表示電極等に用いられるITO系薄膜を、基板無加熱で、成膜時に水添加することなく、スパッタ成膜して、非晶質のITO系膜が得られるとともに、当該ITO系膜が、260°C以下というあまり高温でないアニールで結晶化して、結晶化後の抵抗率が低くなる特性を有するITO系膜、該膜の製造方法および該膜製造のための焼結体の提供を目的とする。
PCT/JP2008/060861 2007-06-26 2008-06-13 アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体 WO2009001693A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020147006910A KR20140041950A (ko) 2007-06-26 2008-06-13 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체
CN200880021931A CN101688288A (zh) 2007-06-26 2008-06-13 非晶质复合氧化膜、结晶质复合氧化膜、非晶质复合氧化膜的制造方法、结晶质复合氧化膜的制造方法及复合氧化物烧结体
US12/666,306 US8252206B2 (en) 2007-06-26 2008-06-13 Amorphous film of composite oxide, crystalline film of composite oxide, method of producing said films and sintered compact of composite oxide
KR1020167012721A KR20160063403A (ko) 2007-06-26 2008-06-13 아모르퍼스 복합 산화막, 결정질 복합 산화막, 아모르퍼스 복합 산화막의 제조 방법, 결정질 복합 산화막의 제조 방법 및 복합 산화물 소결체
JP2009520462A JP4885274B2 (ja) 2007-06-26 2008-06-13 アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法および結晶質複合酸化膜の製造方法

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Application Number Priority Date Filing Date Title
JP2007-167961 2007-06-26
JP2007167961 2007-06-26

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WO2009001693A1 true WO2009001693A1 (ja) 2008-12-31

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PCT/JP2008/060861 WO2009001693A1 (ja) 2007-06-26 2008-06-13 アモルファス複合酸化膜、結晶質複合酸化膜、アモルファス複合酸化膜の製造方法、結晶質複合酸化膜の製造方法および複合酸化物焼結体

Country Status (6)

Country Link
US (1) US8252206B2 (ja)
JP (1) JP4885274B2 (ja)
KR (4) KR20120108062A (ja)
CN (2) CN101688288A (ja)
TW (1) TWI395826B (ja)
WO (1) WO2009001693A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012157699A1 (ja) 2011-05-18 2012-11-22 味の素株式会社 動物用免疫賦活剤、それを含む飼料及びその製造方法
CN104952965A (zh) * 2014-03-24 2015-09-30 三菱电机株式会社 光电变换元件以及光电变换元件的制造方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101155358B1 (ko) 2007-07-13 2012-06-19 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 복합 산화물 소결체, 아모르퍼스 복합 산화막의 제조 방법, 아모르퍼스 복합 산화막, 결정질 복합 산화막의 제조 방법 및 결정질 복합 산화막
WO2010140548A1 (ja) 2009-06-05 2010-12-09 Jx日鉱日石金属株式会社 酸化物焼結体、その製造方法及び酸化物焼結体製造用原料粉末
EP2495224B1 (en) 2009-10-26 2014-12-24 JX Nippon Mining & Metals Corporation Indium oxide sintered body and indium oxide transparent conductive film
CN106399939A (zh) * 2010-07-06 2017-02-15 日东电工株式会社 透明导电性薄膜的制造方法
TW201505039A (zh) * 2010-07-06 2015-02-01 Nitto Denko Corp 透明導電性薄膜捲繞體
US20120213949A1 (en) * 2011-02-18 2012-08-23 Chien-Min Weng Method for producing indium tin oxide layer with controlled surface resistance
CN102324271A (zh) * 2011-10-14 2012-01-18 南昌欧菲光科技有限公司 一种结晶型ito透明导电薄膜及其制备方法
KR102177210B1 (ko) 2013-08-19 2020-11-11 삼성디스플레이 주식회사 화학기상증착장치의 서셉터 이상유무 판단방법 및 이를 이용한 유기발광 디스플레이 장치 제조방법
US9988707B2 (en) 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
FR3022904B1 (fr) * 2014-06-27 2016-07-01 Saint Gobain Procede d'activation de couche sur substrat verrier
KR101945145B1 (ko) * 2016-03-14 2019-02-01 제이엑스금속주식회사 산화물 소결체

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001151572A (ja) * 1998-10-13 2001-06-05 Geomatec Co Ltd 金属酸化物焼結体およびその用途
JP2005194594A (ja) * 2004-01-08 2005-07-21 Tosoh Corp スパッタリングターゲットおよびその製造方法
JP2005259497A (ja) * 2004-03-11 2005-09-22 Tosoh Corp 透明導電膜およびその製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2722716B2 (ja) 1989-09-29 1998-03-09 株式会社島津製作所 単結晶ダイヤモンドの製造方法
JP3827334B2 (ja) 1993-08-11 2006-09-27 東ソー株式会社 Ｉｔｏ焼結体及びスパッタリングターゲット
JPH09110527A (ja) 1995-10-20 1997-04-28 Hitachi Metals Ltd インジウム酸化物系焼結体
JP3576364B2 (ja) 1997-10-13 2004-10-13 株式会社日鉱マテリアルズ Ｉｔｏスパッタリングターゲットのクリーニング方法
KR100628542B1 (ko) * 1998-10-13 2006-09-27 도소 가부시키가이샤 금속산화물 소결체 및 그 용도
JP3632524B2 (ja) 1999-09-24 2005-03-23 東ソー株式会社 Ｍｇ含有ＩＴＯスパッタリングターゲットおよびＭｇ含有ＩＴＯ蒸着材の製造方法
JP4060187B2 (ja) 2001-03-28 2008-03-12 日鉱金属株式会社 酸化インジウム中に錫が固溶したｉｔｏ粉末の製造方法及びｉｔｏターゲットの製造方法
JP4424889B2 (ja) 2001-06-26 2010-03-03 三井金属鉱業株式会社 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
KR100744017B1 (ko) * 2001-06-26 2007-07-30 미츠이 긴조쿠 고교 가부시키가이샤 고저항 투명 도전막용 스퍼터링 타겟 및 고저항 투명도전막의 제조방법
JP4904645B2 (ja) 2001-08-10 2012-03-28 東ソー株式会社 Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法
JP4075361B2 (ja) 2001-11-27 2008-04-16 東ソー株式会社 Ｍｇ含有ＩＴＯスパッタリングターゲットの製造方法
JP2004149883A (ja) 2002-10-31 2004-05-27 Mitsui Mining & Smelting Co Ltd 高抵抗透明導電膜用スパッタリングターゲット及び高抵抗透明導電膜の製造方法
CN100489150C (zh) 2003-08-20 2009-05-20 日矿金属株式会社 Ito溅射靶
JP4098345B2 (ja) 2005-06-28 2008-06-11 日鉱金属株式会社 酸化ガリウム−酸化亜鉛系スパッタリングターゲット、透明導電膜の形成方法及び透明導電膜
US7686985B2 (en) 2005-06-28 2010-03-30 Nippon Mining & Metals Co., Ltd Gallium oxide-zinc oxide sputtering target, method of forming transparent conductive film, and transparent conductive film
RU2389824C2 (ru) 2005-12-08 2010-05-20 Ниппон Майнинг Энд Металз Ко., Лтд. Галлийоксид/цинкоксидная распыляемая мишень, способ формирования прозрачной электропроводной пленки и прозрачная электропроводная пленка
WO2007108266A1 (ja) 2006-03-17 2007-09-27 Nippon Mining & Metals Co., Ltd. 酸化亜鉛系透明導電体及び同透明導電体形成用スパッタリングターゲット
KR101080022B1 (ko) 2006-08-24 2011-11-04 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 산화아연계 투명 도전체 및 동 투명 도전체 형성용 스퍼터링 타겟 그리고 동 타겟의 제조 방법
KR100787635B1 (ko) 2007-01-22 2007-12-21 삼성코닝 주식회사 산화인듐주석 타겟, 이의 제조 방법 및 이로부터 제조된산화인듐주석 투명 전극
KR101155358B1 (ko) 2007-07-13 2012-06-19 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 복합 산화물 소결체, 아모르퍼스 복합 산화막의 제조 방법, 아모르퍼스 복합 산화막, 결정질 복합 산화막의 제조 방법 및 결정질 복합 산화막
WO2011043235A1 (ja) 2009-10-06 2011-04-14 Jx日鉱日石金属株式会社 酸化インジウム焼結体、酸化インジウム透明導電膜及び該透明導電膜の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001151572A (ja) * 1998-10-13 2001-06-05 Geomatec Co Ltd 金属酸化物焼結体およびその用途
JP2005194594A (ja) * 2004-01-08 2005-07-21 Tosoh Corp スパッタリングターゲットおよびその製造方法
JP2005259497A (ja) * 2004-03-11 2005-09-22 Tosoh Corp 透明導電膜およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012157699A1 (ja) 2011-05-18 2012-11-22 味の素株式会社 動物用免疫賦活剤、それを含む飼料及びその製造方法
CN104952965A (zh) * 2014-03-24 2015-09-30 三菱电机株式会社 光电变换元件以及光电变换元件的制造方法

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