TW200833860A - Method for producing transparent conductive film - Google Patents
Method for producing transparent conductive filmInfo
- Publication number
- TW200833860A TW200833860A TW96145687A TW96145687A TW200833860A TW 200833860 A TW200833860 A TW 200833860A TW 96145687 A TW96145687 A TW 96145687A TW 96145687 A TW96145687 A TW 96145687A TW 200833860 A TW200833860 A TW 200833860A
- Authority
- TW
- Taiwan
- Prior art keywords
- conductive film
- transparent conductive
- producing
- producing transparent
- sputtering
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
- H01J37/3408—Planar magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
- Liquid Crystal (AREA)
Abstract
Disclosed is a method for producing a transparent conductive film composed of an oxide containing indium and zinc by sputtering. This method is characterized in that sputtering is performed while maintaining the parallel magnetic field strength of the surface of a target, which is mainly composed of indium oxide and zinc oxide, to less than 400 Oe (Oersted). This method for producing a transparent conductive film is applicable to formation of an amorphous transparent conductive film for liquid crystal displays or organic EL displays.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006347245A JP2008156708A (en) | 2006-12-25 | 2006-12-25 | Method for producing transparent electroconductive film |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200833860A true TW200833860A (en) | 2008-08-16 |
Family
ID=39562279
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW96145687A TW200833860A (en) | 2006-12-25 | 2007-11-30 | Method for producing transparent conductive film |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2008156708A (en) |
TW (1) | TW200833860A (en) |
WO (1) | WO2008078486A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10388520B2 (en) | 2013-12-27 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7838425B2 (en) * | 2008-06-16 | 2010-11-23 | Kabushiki Kaisha Toshiba | Method of treating surface of semiconductor substrate |
JP5850713B2 (en) * | 2011-11-11 | 2016-02-03 | 株式会社アルバック | Magnetron sputtering apparatus and magnetron sputtering method |
JP6267297B1 (en) * | 2016-08-29 | 2018-01-24 | Jx金属株式会社 | Sintered body, sputtering target and manufacturing method thereof |
KR102617710B1 (en) * | 2020-08-05 | 2024-01-25 | 주식회사 이노헨스 | Substrate treatment apparatus |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS605878A (en) * | 1983-06-23 | 1985-01-12 | Ulvac Corp | Control method of discharge impedance of sputtering device |
JP2695605B2 (en) * | 1992-12-15 | 1998-01-14 | 出光興産株式会社 | Target and manufacturing method thereof |
JP3943612B2 (en) * | 1995-09-26 | 2007-07-11 | 出光興産株式会社 | Conductive transparent substrate and method for producing the same |
JPH11200037A (en) * | 1998-01-16 | 1999-07-27 | Toshiba Corp | Production of thin film and sputtering device therefor |
JP4229803B2 (en) * | 2003-10-23 | 2009-02-25 | パナソニック株式会社 | Method for producing transparent conductive film |
-
2006
- 2006-12-25 JP JP2006347245A patent/JP2008156708A/en active Pending
-
2007
- 2007-11-26 WO PCT/JP2007/072712 patent/WO2008078486A1/en active Application Filing
- 2007-11-30 TW TW96145687A patent/TW200833860A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10388520B2 (en) | 2013-12-27 | 2019-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of oxide semiconductor |
Also Published As
Publication number | Publication date |
---|---|
WO2008078486A1 (en) | 2008-07-03 |
JP2008156708A (en) | 2008-07-10 |
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