JP2008156708A - Method for producing transparent electroconductive film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for producing a transparent electroconductive film, which does not blacken the surface of a target, can stably provide a film of low resistance, and shows a high efficiency in the use of the target, and to provide a production apparatus therefor. <P>SOLUTION: The method for producing the transparent electroconductive film of an oxide containing indium and zinc by using a sputtering technique includes sputtering the target containing indium oxide and zinc oxide as main components while keeping the magnetic field in parallel to the target surface in a strength lower than 400 Oe (oersted). <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for producing a transparent conductive film. More specifically, the present invention relates to a method for manufacturing an amorphous transparent conductive film for a liquid crystal display device or an organic EL display device, and a manufacturing apparatus therefor.

  In the oxide transparent conductive film containing indium as a main component, indium oxide (ITO) doped with tin is generally used. As a manufacturing method of this type of oxide transparent conductive film, a sputtering method such as a DC or RF bipolar sputtering method or a DC or RF magnetron sputtering method can uniformly form an oxide transparent conductive film on a large substrate. Many are used.

By the way, in the ITO sputtering method, the substrate temperature and the oxygen gas partial pressure are known as factors affecting the electrical resistivity of the transparent conductive film. Among these, it has been found that the substrate temperature is higher when the temperature is higher.
Regarding the oxygen partial pressure, in the region where the oxygen partial pressure is low, the oxygen deficiency of the film increases and the carrier density increases, but the mobility decreases, and in the region where the oxygen partial pressure is high, the carrier density decreases. The degree is known to increase. Since carrier density and mobility are in a trade-off relationship, it has been found that the oxygen partial pressure has an optimum partial pressure at which the resistance value of the film is minimized.
As described above, in the sputtering method, a low-resistance transparent conductive film has been studied by making full use of the substrate temperature and oxygen gas partial pressure parameters (see, for example, Non-Patent Document 1).

  However, when ITO is used as the target, if sputtering is performed continuously, an insulating oxide called InO is generated on the target surface, and the target surface is blackened (hereinafter referred to as blackening of the target). There is a problem in that the electrical resistance of the transparent conductive film formed on the substrate increases. For this reason, when a transparent conductive film is continuously formed on a large number of substrates, the electric resistance of the film gradually increases, and there is a problem that a film having a uniform electric resistance cannot be obtained.

  As a method for solving this problem, there has been proposed a method in which the sputtering voltage is focused at a voltage lower than a certain value while paying attention to the sputtering voltage (see Patent Document 1). This method is performed by setting the parallel magnetic field strength of the target surface to 400 Oe (Oersted) or more. That is, by setting a strong magnetic field strength, the sputtering discharge voltage is lowered, and the energy of ions colliding with the target is lowered, whereby particles are sputtered into an active monoatomic form to obtain a low-resistance transparent conductive film. It is aimed at things.

However, when the magnetic field intensity on the target surface is set to 400 Oe or more, the plasma that contributes to sputtering is condensed at a high density, and a part of the target is extremely sputtered by the condensed plasma particles. There was a problem that efficiency became extremely low.
To solve this problem, a method has been devised in which the magnet provided on the back side of the target is moved. However, in this case as well, since extremely condensed plasma is used, spatter concentrates on only a part, and erosion (erosion) occurs only on a part of the target, so that the efficiency of use of the target does not increase. There was a problem such as.
The sputtering apparatus is described in Patent Document 2, for example.
Japanese Patent Laid-Open No. 02-232358 JP 2000-144408 A Transparent conductive film technology, p. 170-205 “Japan Society for the Promotion of Science Transparent Oxide Optical and Electronic Materials 166th Edition”

  The present invention has been made in view of the above-mentioned problems, and provides a method and an apparatus for producing a transparent conductive film in which a target surface is not blackened, a low-resistance film is stably obtained, and the target is used efficiently. It is to provide.

According to this invention, the manufacturing method of the transparent conductive film of the oxide containing the following indium and zinc, etc. are provided.
1. A method for producing a transparent conductive film of oxide containing indium and zinc by sputtering, wherein the parallel magnetic field strength of the surface of a target mainly composed of indium oxide and zinc oxide is kept below 400 Oe (Oersted) and sputtered. A method for producing a transparent conductive film.
2. _{2. The} method for producing an oxide transparent conductive film according to 1, wherein the target includes a structure represented by In ₂ O _3. (ZnO) m (m is an integer of 2 to 20).
3. A transparent conductive film made of an oxide containing indium and zinc on a substrate by plasma discharge generated between the substrate and a target mainly composed of indium oxide and zinc oxide in a vacuum processing chamber. An electromagnet that adjusts the parallel magnetic field strength of the target surface on the back side of the surface of the target that faces the substrate, and controls the magnetic field strength of the electromagnet according to a change in sputtering voltage, And a mechanism for holding the parallel magnetic field strength of the target surface below 400 Oe.
4). A transparent conductive film made of an oxide containing indium and zinc on a substrate by plasma discharge generated between the substrate and a target mainly composed of indium oxide and zinc oxide in a vacuum processing chamber. And a control mechanism for adjusting the distance between the magnet and the target surface on the back side of the surface of the target that faces the substrate. And the manufacturing apparatus of the transparent conductive film characterized by adjusting the distance of the said magnet and target surface according to the change of a sputtering voltage.

In the method for producing a transparent conductive film of the present invention, the target surface is not blackened, a low-resistance film can be stably obtained, and the use efficiency of the target is high.
Moreover, the manufacturing method of the present invention can be easily carried out by the manufacturing apparatus of the present invention.

Hereinafter, the manufacturing method of the transparent conductive film of this invention is demonstrated concretely.
The method for producing a transparent conductive film according to the present invention is a method for producing a transparent conductive film of an oxide containing indium and zinc by a sputtering method, wherein the parallel magnetic field strength of the surface of a target mainly composed of indium oxide and zinc oxide is increased. It is characterized by being sputtered while being kept below 400 Oe.
By maintaining the parallel magnetic field strength of the target surface below 400 Oe, abnormal condensation of plasma can be suppressed and the erosion of the target can be spread over the entire target surface. Thereby, the usage efficiency of the target is remarkably increased.
The parallel magnetic field strength on the target surface is preferably 200 Oe or more and less than 400 Oe, more preferably 200 Oe to 350 Oe, more preferably 200 Oe to 300 Oe. If it is less than 200 Oe, the plasma may not be stable, and the sputtering state may not be stable.
The parallel magnetic field strength on the target surface is F.D. W. The average value measured in the state which used the handy Gauss meter type 5080 by BELL, and made the probe (STD58-0404) contact the target surface is meant.

  In addition, when using a target made of indium oxide (ITO) doped with tin and forming a film at less than 400 Oe, a stable and low resistance film cannot be continuously formed. On the other hand, by using a target mainly composed of indium oxide-zinc oxide as in the present invention, there is no blackening of the target, and sputtering is performed at less than 400 Oe, so that the usage efficiency of the target is dramatically improved. To do.

The target used in the present invention is composed of indium oxide containing indium oxide-zinc oxide as a main component and a compound represented by In ₂ O _3. (ZnO) m (m is an integer of 2 to 20). Preferably there is.
As a result, the bulk resistance of the target is low, a stable sputter discharge is maintained, and a stable sputter speed without blackening is obtained.
The compound contained in the target can be identified by X-ray diffraction.
In addition, indium oxide-zinc oxide as a main component means that the content thereof is 50% by weight or more, preferably 80% by weight or more of the entire target. In addition to indium oxide-zinc oxide, for example, tin oxide can be contained.

The ratio [In / (In + Zn): atomic ratio] of In element to the total of In element and Zn element of the indium oxide-zinc oxide target is preferably 0.2 to 0.95, and preferably 0.5 to 0.95. More preferred is 0.7 to 0.95. If it is less than 0.2, the specific resistance of the transparent conductive film obtained becomes large and may not be put to practical use. On the other hand, when it exceeds 0.95, there are cases where the transparent conductive film is crystallized and does not become a transparent conductive film, or crystallized to increase specific resistance.
The composition of the target can be measured by elemental analysis.

The manufacturing method of the transparent conductive film of this invention can be implemented with the following apparatuses, for example.
FIG. 1 is a schematic view showing an embodiment of the sputtering apparatus of the present invention.
The sputtering apparatus 1 makes a substrate and an indium oxide-zinc oxide target face each other in a vacuum processing chamber, and an oxide transparent conductive film containing indium and zinc is formed on the substrate by plasma discharge generated between the substrate and the target. It is an apparatus to form.

The sputtering apparatus 1 has a configuration in which a cathode case 20 is connected to a vacuum processing chamber 10. The vacuum processing chamber 10 has an exhaust port 11 and an introduction pipe 12 for introducing a sputtering gas. In the vacuum processing chamber 10, there is a table 13 on which a substrate B to be deposited is placed. The wall of the vacuum processing chamber 10 is grounded and functions as an anode.
The cathode case 20 is connected to a part of the vacuum processing chamber 10, and a cathode 21 is installed on a surface in contact with the vacuum processing chamber 10. The cathode 21 has a configuration in which a target 23 is fixed to a backing plate 22 with wax or the like. The target 23 faces the substrate B.
An electromagnet 24 is provided inside the cathode case 20 and adjusts the magnetic field intensity on the surface of the target 23.

The electromagnet 24 is connected to an electromagnet DC power supply 25. The vacuum processing chamber 10 and the cathode case 20 are connected to a DC power source 26 for plasma discharge.
The electromagnet DC power supply 25 and the plasma discharge DC power supply 26 are connected through the control unit 30 to constitute a mechanism for controlling the electromagnet current based on the sputtering voltage value during plasma discharge.
Although not shown, the connection between the vacuum processing chamber 10 and the cathode case 20 is insulated with a Teflon (registered trademark) sheet or the like. An earth shield 14 is installed. Moreover, you may install an adhesion prevention board between the board | substrate B and the target 23 as needed. Further, the table 13 may have heating means such as a heater.

Then, the manufacturing method of the oxide transparent conductive film using the sputtering apparatus 1 is demonstrated.
A substrate B on which a transparent conductive film such as a glass substrate is formed is placed on the base 13 of the vacuum processing chamber 10, and a target 23 made of indium oxide-zinc oxide is fixed to the backing plate 22. And The pressure is reduced by a vacuum pump (not shown) connected to the exhaust port 11. After decompression, a sputtering gas such as an argon-oxygen mixed gas is introduced from the introduction tube 12.
A DC power source 26 for plasma discharge applies a voltage to the cathode case 20 and the vacuum processing chamber 10 to generate plasma, and sputtering is performed. At this time, the sputtering voltage value is transmitted from the DC power source 26 for plasma discharge to the control unit 30, and the magnetic force of the electromagnet is controlled by controlling the DC power source 25 for the electromagnet based on this value. Is controlled to less than 400 Oe.

  In the apparatus of the present invention, since there is the control unit 30 that adjusts the current to the electromagnet 24 according to the change of the sputtering voltage, the parallel magnetic field strength on the target surface can be fixed near a predetermined value. The control unit 30 controls the current of the electromagnet 24 based on the relationship between the sputtering voltage measured in advance and the parallel magnetic field strength of the target surface. Although the specific relationship differs depending on the apparatus, in general, when the sputtering voltage is shifted to the higher side, the current of the electromagnet 24 is increased to control the magnetic field strength to be increased, and when the sputtering voltage is shifted to the lower side. By controlling the current of the electromagnet 24 to be reduced to lower the magnetic field strength, the parallel magnetic field strength can be controlled near a predetermined value, and sputtering can be performed with a constant parallel magnetic field strength.

As described above, the transparent oxide conductive film can be formed by adjusting the sputtering time, the sputtering gas concentration, and the like so as to obtain a desired film thickness while controlling the parallel magnetic field strength on the target surface.
In addition, other than controlling the parallel magnetic field intensity on the target surface to a predetermined value, normal conditions in this field (such as the degree of vacuum and the heating temperature of the substrate) can be employed.

  In the above-described embodiment, the parallel magnetic field strength on the target surface is adjusted by controlling the current of the electromagnet 24, but the present invention is not limited to this, and other methods may be employed. For example, the parallel magnetic field strength can be adjusted by changing the vertical distance between the target and the magnet.

2 is a schematic front view showing another embodiment of the sputtering apparatus of the present invention, FIG. 3 is a cross-sectional view taken along the line AA of FIG. 2, and FIG. 4 is a perspective view of the main part of the apparatus.
The sputtering apparatus 2 basically has the same configuration as the sputtering apparatus 1 described above. Specifically, the cathode case 20 is connected to the vacuum processing chamber 10. Since the present embodiment is characterized in that the electromagnet can be moved in the cathode case 20 in the parallel and vertical directions of the substrate B, description of the vacuum processing chamber 10 is omitted. Further, the same components as those in the apparatus shown in FIG.

The cathode 21 attached perpendicularly to the chamber wall of the vacuum processing chamber 10 includes a backing plate 22 that is airtightly attached to one side of a square cathode case 20 and a plate-like target 23 such as a square bonded to the surface thereof. . The cathode 21 is connected to a suitable DC power source. A longitudinal plate-like electromagnet 24 is provided so as to be movable along the back surface of the target 23. In order to move the electromagnet 24 along the back surface of the target 23, a moving device 40 is provided on the back surface of the cathode case 20 and behind the electromagnet 24.
An adhesion preventing plate 27 (shield) is installed between the substrate B and the target 23 so that a thin film is not attached to portions other than the substrate B. The electromagnet 24 may be a permanent magnet.

When the cathode 21 is energized from the DC power source to form the substrate B by sputtering, the leakage magnetic field generated by the electromagnet 24 formed on the surface 23a side of the target 23 confines the plasma, and a high-density plasma region is formed. With the movement of 24, the surface side of the target 23 is moved, and film formation is performed on the substrate B provided in the vacuum processing chamber 10 facing the target 23 while the surface 23a of the target 23 is uniformly magnetron sputtered.
The length of the electromagnet 24 is usually formed longer than the sputtering area of the target 23, the width of the electromagnet 24 is shorter than the sputtering area of the target 23, and the entire sputtering area of the target 23 is leaked by the small electromagnet 24 that moves. It can be scanned with.

In general, the cathode 21 is supplied with constant-power controlled power from a DC power source. When the electromagnet 24 moves from one end of the target 23 to the other end, the discharge voltage (sputtering voltage) is high at the moving end, and the discharge voltage is low at an intermediate position during the movement.
In the present invention, a parallel magnetic field on the target surface is maintained by moving the electromagnet 24 in a direction perpendicular to the surface 23a of the target 23 in accordance with the increase or decrease of the sputtering voltage during the movement to maintain the discharge voltage substantially constant. Strength can be controlled.

Next, a mechanism that enables the electromagnet 24 to move in parallel and perpendicular directions to the substrate B will be described.
The electromagnet 24 moving device 40 includes a screw 42 through which a boss 41 provided behind the electromagnet 24 is inserted, an electric motor 43 for rotating the screw 42 forward and backward, and a guide rod 44 for stably moving the electromagnet 24. The screw rod 42, the electric motor 43, and the guide rod 44 are mounted on a movable frame 45 provided behind the electromagnet 24. In addition, a pair of square-axis guide rods 46 extending in the back direction of the electromagnet 24 and perpendicular to the surface 23 a of the target 23 are attached to the cathode case 20, and slides provided on the movable frame 45 on each guide rod 46. In order to allow the movable frame 45 to reciprocate in the vertical direction of the surface 23a by inserting the bush 47, and to move the movable frame 45 back and forth in the vertical direction, a boss 48 is provided on the movable frame 45, and the cathode case 20 A ball screw screw 49 extending in the same direction as a guide rod 46 provided rotatably is screwed together, and the rotation of the electric motor 50 mounted on the cathode case 20 is transmitted to the screw rod 49 via the belt 51 and the pulley 52. It is. As a result, when the electric motor 50 rotates forward and backward, the screw 49 rotates forward and backward, and the movable frame 45 is reciprocated in the vertical direction with respect to the surface 23a.

In the apparatus of the present invention, by adjusting the distance between the electromagnet 24 and the target 23 according to the change in the sputtering voltage, the parallel magnetic field strength on the target surface can be fixed near a predetermined value.
Specifically, when the sputtering voltage is shifted to the higher side, the distance between the electromagnet 24 and the target 23 is controlled to be closer, and when the sputtering voltage is shifted to the lower side, the distance is increased. The parallel magnetic field strength can be controlled in the vicinity of a predetermined value, and sputtering can be performed with a constant parallel magnetic field strength.

  In this apparatus, a detector 53 for detecting the sputtering voltage is provided, and when the detector 53 is connected to the controller 54 of the electric motor 50 and the sputtering voltage, that is, the detection value of the detector 53 is larger than the predetermined value, the movable frame 45 and The electromagnet 24 is brought close to the surface 23a, and when the detected value is smaller than the predetermined value, the electric motor 50 is rotated so as to keep them away from the surface 23a.

  In the present invention, as described above, the electromagnet 24 is moved further in the vertical direction with respect to the surface 23a during the movement thereof, and the parallel magnetic field strength is made constant. Even when the target is consumed, a uniform plasma can be obtained and a uniform film can be formed on the substrate, preventing abnormal discharge, preventing splash and particles, and a good quality film. Is obtained.

  In the present embodiment, the electromagnet 24 is connected to the electromagnet DC power source and the control unit in the same manner as the sputtering apparatus 1 described above, and controls the magnetic force of the electromagnet based on the sputtering voltage value, thereby increasing the parallel magnetic field strength on the target surface. You may have the mechanism to adjust.

Examples 1-4, Comparative Examples 1 and 2
Non-alkali glass (Corning # 7059) was set as a substrate in a vacuum chamber of a sputtering apparatus (manufactured by Shinko Seiki Co., Ltd.). Further, a target composed of indium oxide (89.3 wt%)-zinc oxide (10.7 wt%) as a target (IZO target: IZO is a registered trademark of Idemitsu Kosan Co., Ltd.) and has a size of 4 inches φ A x5 mm thick one was used. The structure of the IZO target is In ₂ O _3. (ZnO) m (m is an integer of 2 to 20).
The vacuum chamber was evacuated to 5 × 10 ⁻⁴ Pa and then argon gas containing 1% oxygen was introduced to make the vacuum chamber 0.3 Pa. Thereafter, sputtering was started at room temperature. DC magnetron sputtering was performed with a predetermined power, and the electromagnet was controlled so that the parallel magnetic field strength of the target surface at the time of sputtering became the value shown in Table 1, and was continuously operated.
At this time, the specific resistance of the transparent conductive film was measured at the initial stage of film formation (10 hours after the start) and at the end stage (450 hours after the start). Sputtering was terminated at a point where the erosion depth reached 4 mm.

Table 1 shows the parallel magnetic field strength of the target surface, the specific resistance and sputtering voltage of the film at the initial stage of sputtering, the specific resistance and sputtering voltage of the film at the end of sputtering, and the usage efficiency of the target in each example.
The target usage efficiency was calculated by the following equation.
{(Weight of initial target)-(Target weight after use)} / (Weight of initial target)
Further, the specific resistance of the film is measured by a Loresta made by Mitsubishi Yuka, and the sputtering voltage is a value of a voltage applied to the target.
The parallel magnetic field strength on the target surface is F.D. W. The measurement was performed in a state where the probe (STD58-0404) was brought into contact with the target surface using a handheld Gauss meter 5080 manufactured by BELL. Three or more measurements were taken, and the average value was taken as the parallel magnetic field strength. The same applies to Example 5 and Comparative Example 3-6 described later.

  In each case, no blackened material was deposited until the end of sputtering, the sputtering rate did not decrease, and no abnormal discharge such as arcing was observed. It was confirmed that the working efficiency of the example was higher than that of the comparative example.

Comparative Examples 3 and 4
Similarly to Example 1, non-alkali glass (Corning # 7059) was set as a substrate in a vacuum chamber of a sputtering apparatus (manufactured by Shinko Seiki Co., Ltd.).
The target was an indium oxide (90 wt%)-tin oxide (10 wt%) target (ITO target) having a size of 4 inches φ × 5 mm thick.
The inside of the vacuum layer was evacuated to 5 × 10 ⁻⁴ Pa and then argon gas containing 2% oxygen was introduced to make the inside of the vacuum layer 0.3 Pa. Thereafter, sputtering was started at room temperature. DC magnetron sputtering was performed with a predetermined power, and the electromagnet was controlled and continuously operated so that the magnetic field strength of the target surface at this time was 300 Oe (Comparative Example 3) or 1200 Oe (Comparative Example 4).

  Table 2 shows the parallel magnetic field strength of the target surface, the specific resistance and sputtering voltage of the initial sputtering film, the specific resistance and sputtering voltage of the final sputtering film, and the target usage efficiency in Comparative Examples 3 and 4.

  At the end of sputtering, the black matter was heavily deposited, the sputtering rate was drastically reduced, and abnormal discharge such as arcing occurred frequently.

Example 5
A transparent conductive film was produced using the sputtering apparatus shown in FIG.
The target is an indium oxide (89.3 wt%)-zinc oxide (10.7 wt%) target (IZO target: IZO is a registered trademark of Idemitsu Kosan Co., Ltd.) having a length of 1000 mm and a width of 800 mm. used.
This target was attached to the backing plate 22, the vacuum processing chamber 10 was vacuumed at 0.7 Pa, a DC discharge power source controlled to a constant power of 33 Kw was connected to the cathode 21, and a constant power of 33 Kw was input to the cathode 21. The anode is a chamber wall of the vacuum processing chamber 10 having a ground potential. The electromagnet 24 is a long plate having a length of 1000 mm and a width of 100 mm. When the electromagnet 24 is located at both ends of the target 23, it is set at a distance of 60 mm from the surface 23 a, and a magnetic field of 300 Oe is obtained at a position 0 mm forward of the surface. I was able to.
The electromagnet 24 was reciprocated by the electric motor 43 at a speed of 2.5 seconds in one way, and an aluminum thin film was formed on the substrate prepared at a position facing the target 23. The discharge voltage is high when the electromagnet 24 is in the vicinity of the movement start end, and the discharge voltage is detected low at the intermediate position of the moving target. Therefore, the movable frame 45 moves the electromagnet 24 from the surface 23a to 5 mm during the movement. When it moved away and approached the other end, the discharge voltage increased, so it approached the surface 23a again by 5 mm. When the discharge voltage and discharge current in this case were measured, the change width of the discharge voltage was 25 V at the maximum.

  The film quality formed on the substrate B was homogeneous, and no abnormal discharge occurred during the film formation for 30 hours. Further, blackening of the target surface and generation of nodules were not recognized. The film quality was a completely amorphous film, a uniform film thickness, and both transparency and specific resistance were uniform.

Comparative Example 5
When the operation of the movable frame 45 of Example 5 in the vertical direction is disabled, the electromagnet 24 is fixed at a position 65 mm from the surface 23a, and the electromagnet 24 is moved in one way for 2.5 seconds under the same conditions as described above, the discharge is performed. The maximum change width of the voltage was 90V. The parallel magnetic field strength at that time was 850 Oe.
The film thus obtained had a grain that was coarser and thinner at the edge of the substrate than at its center, and a homogeneous film could not be obtained. In addition, three abnormal discharges occurred during the film formation for 30 hours, and a splash was formed on the film, resulting in a product defect.

Comparative Example 6
The target of Example 5 is changed to indium oxide-tin oxide (ITO), the operation of the movable frame 45 in the vertical direction is disabled, and the electromagnet 24 is fixed at a position 65 mm from the surface 23a under the same conditions as above. When 24 was moved in one way for 2.5 seconds, the maximum change width of the discharge voltage was 85V.
As a result, the end portion of the substrate was more crystalline than the central portion, the thickness was thin, and a uniform film could not be obtained. In addition, an abnormal discharge of 28 degrees occurred during the film formation for 30 hours, and a splash was formed on the film, resulting in a product defect.

  The manufacturing method of the oxide transparent conductive film of this invention can be utilized for formation of the amorphous transparent conductive film for liquid crystal display devices and organic EL display devices. Moreover, since the manufacturing apparatus of this invention can control the parallel magnetic field intensity of the target surface easily, it can be used conveniently for implementation of the manufacturing method of this invention.

It is the schematic which shows one Embodiment of the sputtering device of this invention. It is a schematic front view which shows other embodiment of the sputtering device of this invention. It is the sectional view on the AA line of FIG. 3 is a perspective view of a main part of a sputtering apparatus 2. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 2 Sputtering apparatus 10 Vacuum processing chamber 11 Exhaust port 12 Inlet tube 13 Unit 14 Ground shield 20 Cathode case 21 Cathode 22 Backing plate 23 Target 23a Target surface 24 Electromagnet 25 DC power source for electromagnet 26 DC power source for plasma discharge 27 Adhesion Plate 30 Control unit 40 Moving device 41, 48 Boss 42, 49 Screw 43, 50 Motor 44, 46 Guide rod 45 Movable frame 47 Slide bush 51 Belt 52 Pulley 53 Detector 54 Controller B Substrate

Claims (4)

A method for producing a transparent conductive film of an oxide containing indium and zinc by a sputtering method,
A method for producing a transparent conductive film, wherein sputtering is performed while maintaining a parallel magnetic field strength of a surface of a target containing indium oxide and zinc oxide as main components below 400 Oe (Oersted). _{2. The} method for producing a transparent oxide conductive film according to claim 1, wherein the target includes a structure represented by In ₂ O _3. (ZnO) m (m is an integer of 2 to 20). A transparent conductive film made of an oxide containing indium and zinc on a substrate by plasma discharge generated between the substrate and a target mainly composed of indium oxide and zinc oxide in a vacuum processing chamber. In the apparatus for forming
An electromagnet that adjusts the parallel magnetic field strength of the target surface on the back side of the surface of the target facing the substrate;
An apparatus for producing a transparent conductive film, comprising: a mechanism for controlling a magnetic field strength of the electromagnet according to a change in sputtering voltage and maintaining a parallel magnetic field strength of a target surface at less than 400 Oe. A transparent conductive film made of an oxide containing indium and zinc on a substrate by plasma discharge generated between the substrate and a target mainly composed of indium oxide and zinc oxide in a vacuum processing chamber. In the apparatus for forming
On the back side of the surface of the target facing the substrate, there is a magnet for adjusting the parallel magnetic field strength of the target surface, and a control mechanism for adjusting the distance between the magnet and the target surface. The transparent conductive film manufacturing apparatus is characterized in that the distance between the magnet and the target surface is adjusted according to the conditions.

Images