WO2008078486A1 - Method for producing transparent conductive film - Google Patents

Method for producing transparent conductive film Download PDF

Info

Publication number
WO2008078486A1
WO2008078486A1 PCT/JP2007/072712 JP2007072712W WO2008078486A1 WO 2008078486 A1 WO2008078486 A1 WO 2008078486A1 JP 2007072712 W JP2007072712 W JP 2007072712W WO 2008078486 A1 WO2008078486 A1 WO 2008078486A1
Authority
WO
WIPO (PCT)
Prior art keywords
conductive film
transparent conductive
producing
producing transparent
sputtering
Prior art date
Application number
PCT/JP2007/072712
Other languages
French (fr)
Japanese (ja)
Inventor
Kazuyoshi Inoue
Katsunori Honda
Original Assignee
Idemitsu Kosan Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co., Ltd. filed Critical Idemitsu Kosan Co., Ltd.
Publication of WO2008078486A1 publication Critical patent/WO2008078486A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Electric Cables (AREA)
  • Liquid Crystal (AREA)

Abstract

Disclosed is a method for producing a transparent conductive film composed of an oxide containing indium and zinc by sputtering. This method is characterized in that sputtering is performed while maintaining the parallel magnetic field strength of the surface of a target, which is mainly composed of indium oxide and zinc oxide, to less than 400 Oe (Oersted). This method for producing a transparent conductive film is applicable to formation of an amorphous transparent conductive film for liquid crystal displays or organic EL displays.
PCT/JP2007/072712 2006-12-25 2007-11-26 Method for producing transparent conductive film WO2008078486A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006347245A JP2008156708A (en) 2006-12-25 2006-12-25 Method for producing transparent electroconductive film
JP2006-347245 2006-12-25

Publications (1)

Publication Number Publication Date
WO2008078486A1 true WO2008078486A1 (en) 2008-07-03

Family

ID=39562279

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/072712 WO2008078486A1 (en) 2006-12-25 2007-11-26 Method for producing transparent conductive film

Country Status (3)

Country Link
JP (1) JP2008156708A (en)
TW (1) TW200833860A (en)
WO (1) WO2008078486A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013104073A (en) * 2011-11-11 2013-05-30 Ulvac Japan Ltd Magnetron spattering device and magnetron spattering method
JP6267297B1 (en) * 2016-08-29 2018-01-24 Ｊｘ金属株式会社 Sintered body, sputtering target and manufacturing method thereof
US10388520B2 (en) 2013-12-27 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7838425B2 (en) * 2008-06-16 2010-11-23 Kabushiki Kaisha Toshiba Method of treating surface of semiconductor substrate
KR102617710B1 (en) * 2020-08-05 2024-01-25 주식회사 이노헨스 Substrate treatment apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605878A (en) * 1983-06-23 1985-01-12 Ulvac Corp Control method of discharge impedance of sputtering device
JPH06234565A (en) * 1992-12-15 1994-08-23 Idemitsu Kosan Co Ltd Target and its production
JPH0992037A (en) * 1995-09-26 1997-04-04 Idemitsu Kosan Co Ltd Conductive transparent base and its manufacture
JPH11200037A (en) * 1998-01-16 1999-07-27 Toshiba Corp Production of thin film and sputtering device therefor
JP2005126758A (en) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd Method of producing transparent electroconductive film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS605878A (en) * 1983-06-23 1985-01-12 Ulvac Corp Control method of discharge impedance of sputtering device
JPH06234565A (en) * 1992-12-15 1994-08-23 Idemitsu Kosan Co Ltd Target and its production
JPH0992037A (en) * 1995-09-26 1997-04-04 Idemitsu Kosan Co Ltd Conductive transparent base and its manufacture
JPH11200037A (en) * 1998-01-16 1999-07-27 Toshiba Corp Production of thin film and sputtering device therefor
JP2005126758A (en) * 2003-10-23 2005-05-19 Matsushita Electric Ind Co Ltd Method of producing transparent electroconductive film

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013104073A (en) * 2011-11-11 2013-05-30 Ulvac Japan Ltd Magnetron spattering device and magnetron spattering method
US10388520B2 (en) 2013-12-27 2019-08-20 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor
JP6267297B1 (en) * 2016-08-29 2018-01-24 Ｊｘ金属株式会社 Sintered body, sputtering target and manufacturing method thereof

Also Published As

Publication number Publication date
JP2008156708A (en) 2008-07-10
TW200833860A (en) 2008-08-16

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