TW200725907A - Semiconductor thin film, method for producing same, thin film transistor and active-matrix-driven display panel - Google Patents

Semiconductor thin film, method for producing same, thin film transistor and active-matrix-driven display panel

Info

Publication number
TW200725907A
TW200725907A TW095142654A TW95142654A TW200725907A TW 200725907 A TW200725907 A TW 200725907A TW 095142654 A TW095142654 A TW 095142654A TW 95142654 A TW95142654 A TW 95142654A TW 200725907 A TW200725907 A TW 200725907A
Authority
TW
Taiwan
Prior art keywords
thin film
semiconductor thin
film
matrix
active
Prior art date
Application number
TW095142654A
Other languages
Chinese (zh)
Other versions
TWI412135B (en
Inventor
Koki Yano
Kazuyoshi Inoue
Nobuo Tanaka
Original Assignee
Idemitsu Kosan Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co filed Critical Idemitsu Kosan Co
Publication of TW200725907A publication Critical patent/TW200725907A/en
Application granted granted Critical
Publication of TWI412135B publication Critical patent/TWI412135B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G15/00—Compounds of gallium, indium or thallium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Dram (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

Disclosed is a semiconductor thin film which can be formed at a relatively low temperature even on a flexible resin substrate. Since the semiconductor thin film is stable to visible light and has high device characteristics such as transistor characteristics, it does not decrease the luminance of a display when overlapped with the pixel portion in case where the semiconductor thin film is used as a switching device for driving the display. Specifically disclosed is a transparent semiconductor thin film 40 produced by forming an amorphous film containing zinc oxide and indium oxide and then oxidizing the film so that the resulting film has a carrier density of 10<+17> cm<-3> or less, a hole mobility of 2 cm<2>/V.sec or more, and an energy band gap of 2.4 eV or more.
TW095142654A 2005-11-18 2006-11-17 A semiconductor thin film, and a method of manufacturing the same, and a thin film transistor, an active matrix driving display panel TWI412135B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005334501A JP5376750B2 (en) 2005-11-18 2005-11-18 Semiconductor thin film, manufacturing method thereof, thin film transistor, active matrix drive display panel

Publications (2)

Publication Number Publication Date
TW200725907A true TW200725907A (en) 2007-07-01
TWI412135B TWI412135B (en) 2013-10-11

Family

ID=38048615

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095142654A TWI412135B (en) 2005-11-18 2006-11-17 A semiconductor thin film, and a method of manufacturing the same, and a thin film transistor, an active matrix driving display panel

Country Status (5)

Country Link
JP (1) JP5376750B2 (en)
KR (1) KR101291977B1 (en)
CN (1) CN101309863B (en)
TW (1) TWI412135B (en)
WO (1) WO2007058231A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460144B (en) * 2008-09-19 2014-11-11 Idemitsu Kosan Co Oxide sintered body and sputtering target
TWI508304B (en) * 2008-11-28 2015-11-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
TWI608545B (en) * 2008-10-24 2017-12-11 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
TWI651838B (en) * 2009-09-16 2019-02-21 日商半導體能源研究所股份有限公司 Transistor

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7998372B2 (en) 2005-11-18 2011-08-16 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
JP5215589B2 (en) 2007-05-11 2013-06-19 キヤノン株式会社 Insulated gate transistor and display device
JP5241143B2 (en) * 2007-05-30 2013-07-17 キヤノン株式会社 Field effect transistor
JP5242083B2 (en) * 2007-06-13 2013-07-24 出光興産株式会社 Crystalline oxide semiconductor and thin film transistor using the same
JP5354999B2 (en) * 2007-09-26 2013-11-27 キヤノン株式会社 Method for manufacturing field effect transistor
WO2009081885A1 (en) * 2007-12-25 2009-07-02 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
CN103258857B (en) * 2007-12-13 2016-05-11 出光兴产株式会社 Field-effect transistor using oxide semiconductor and method for manufacturing same
JP5219529B2 (en) * 2008-01-23 2013-06-26 キヤノン株式会社 Field effect transistor and display device including the field effect transistor
GB2457872A (en) * 2008-02-13 2009-09-02 Univ Ind & Acad Collaboration Thin-film transistor using nano-crystalline thin-film as active layer, and method for fabricating the same
KR100918404B1 (en) * 2008-03-03 2009-09-24 삼성모바일디스플레이주식회사 Organic thin film transistor and a flat panel display employing the same
US8017045B2 (en) 2008-04-16 2011-09-13 Electronics And Telecommunications Research Institute Composition for oxide semiconductor thin film and field effect transistor using the composition
JP5510767B2 (en) * 2008-06-19 2014-06-04 出光興産株式会社 Thin film transistor and manufacturing method thereof
JP5322530B2 (en) * 2008-08-01 2013-10-23 富士フイルム株式会社 Thin film field effect transistor manufacturing method and thin film field effect transistor manufactured by the manufacturing method
JP5480554B2 (en) * 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 Semiconductor device
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
KR102094683B1 (en) * 2008-09-19 2020-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
KR101435501B1 (en) 2008-10-03 2014-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
CN101719493B (en) 2008-10-08 2014-05-14 株式会社半导体能源研究所 Display device
KR101667909B1 (en) 2008-10-24 2016-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method for manufacturing semiconductor device
JP5616012B2 (en) 2008-10-24 2014-10-29 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR102149626B1 (en) * 2008-11-07 2020-08-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Method of manufacturing a semiconductor device
TWI656645B (en) * 2008-11-13 2019-04-11 日商半導體能源研究所股份有限公司 Semiconductor device and method of manufacturing same
TWI585955B (en) 2008-11-28 2017-06-01 半導體能源研究所股份有限公司 Photosensor and display device
JP5515281B2 (en) * 2008-12-03 2014-06-11 ソニー株式会社 THIN FILM TRANSISTOR, DISPLAY DEVICE, ELECTRONIC DEVICE, AND METHOD FOR PRODUCING THIN FILM TRANSISTOR
EP2202802B1 (en) 2008-12-24 2012-09-26 Semiconductor Energy Laboratory Co., Ltd. Driver circuit and semiconductor device
TWI540647B (en) * 2008-12-26 2016-07-01 半導體能源研究所股份有限公司 Semiconductor device and manufacturing method thereof
KR101017494B1 (en) * 2009-02-20 2011-02-25 연세대학교 산학협력단 InZnO THIN FILM AND FABRICATION METHOD THEREOF
US8704216B2 (en) * 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101834009B (en) * 2009-03-13 2013-05-01 中国科学院福建物质结构研究所 Low-indium doping amount zinc oxide transparent conducting film and preparation method thereof
WO2010110571A2 (en) 2009-03-23 2010-09-30 Samsung Electronics Co., Ltd. Oxide semiconductor and thin film transistor including the same
KR101681884B1 (en) 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device, display device, and electronic appliance
TWI489628B (en) 2009-04-02 2015-06-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
WO2011001881A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2011002046A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101782176B1 (en) 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
US8829513B2 (en) 2009-08-31 2014-09-09 Sharp Kabushiki Kaisha Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O
KR102246529B1 (en) 2009-09-16 2021-04-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR102321565B1 (en) 2009-09-24 2021-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
CN102648524B (en) * 2009-10-08 2015-09-23 株式会社半导体能源研究所 Semiconductor device, display unit and electronic apparatus
EP2486594B1 (en) 2009-10-08 2017-10-25 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device
KR101820972B1 (en) 2009-10-09 2018-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
CN116343705A (en) 2009-10-16 2023-06-27 株式会社半导体能源研究所 Display apparatus
WO2011046010A1 (en) 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the liquid crystal display device
WO2011048945A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same
KR101789309B1 (en) 2009-10-21 2017-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Analog circuit and semiconductor device
SG188112A1 (en) 2009-10-30 2013-03-28 Semiconductor Energy Lab Logic circuit and semiconductor device
CN102576172B (en) * 2009-10-30 2016-01-27 株式会社半导体能源研究所 Liquid crystal display, its driving method and comprise the electronic apparatus of this liquid crystal display
KR102223595B1 (en) * 2009-11-06 2021-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and manufacturing method thereof
KR101787353B1 (en) 2009-11-13 2017-10-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
KR101826832B1 (en) * 2009-11-13 2018-02-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and electronic device including the same
KR101802406B1 (en) 2009-11-27 2017-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101824124B1 (en) 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
KR101839931B1 (en) 2009-11-30 2018-03-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Liquid crystal display device, method for driving the same, and electronic device including the same
KR101396102B1 (en) 2009-12-04 2014-05-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
WO2011068106A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device including the same
CN102648525B (en) 2009-12-04 2016-05-04 株式会社半导体能源研究所 Display unit
WO2011070901A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011077926A1 (en) * 2009-12-24 2011-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR101873730B1 (en) 2010-01-24 2018-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device
US8947337B2 (en) 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
CN102163691A (en) * 2010-02-22 2011-08-24 复旦大学 Mixed type oxide thin film transistor and preparation method thereof
US20130026462A1 (en) * 2010-03-04 2013-01-31 Sharp Kabushiki Kaisha Method for manufacturing thin film transistor and thin film transistor manufactured by the same, and active matrix substrate
JP5491258B2 (en) * 2010-04-02 2014-05-14 出光興産株式会社 Method for forming oxide semiconductor
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
JP5923248B2 (en) * 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 Semiconductor device
US8552425B2 (en) 2010-06-18 2013-10-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5718072B2 (en) 2010-07-30 2015-05-13 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． Thin film transistor oxide for semiconductor layer and sputtering target, and thin film transistor
US8883555B2 (en) * 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
KR101995082B1 (en) 2010-12-03 2019-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Oxide semiconductor film and semiconductor device
GB201021853D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021860D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for diamond synthesis
GB2486778B (en) 2010-12-23 2013-10-23 Element Six Ltd Controlling doping of synthetic diamond material
GB201021855D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave power delivery system for plasma reactors
GB201021913D0 (en) 2010-12-23 2011-02-02 Element Six Ltd Microwave plasma reactors and substrates for synthetic diamond manufacture
GB201021870D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
GB201021865D0 (en) 2010-12-23 2011-02-02 Element Six Ltd A microwave plasma reactor for manufacturing synthetic diamond material
US8829512B2 (en) 2010-12-28 2014-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9911858B2 (en) 2010-12-28 2018-03-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5189674B2 (en) * 2010-12-28 2013-04-24 出光興産株式会社 Laminated structure having oxide semiconductor thin film layer, method for producing laminated structure, thin film transistor, and display device
KR101891650B1 (en) 2011-09-22 2018-08-27 삼성디스플레이 주식회사 OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME AND THIN FILM TRANSISTOR array PANEL INCLUDING THE SAME
KR20130049620A (en) 2011-11-04 2013-05-14 삼성디스플레이 주식회사 Display device
KR102084274B1 (en) * 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
CN102509735B (en) * 2011-12-27 2013-10-02 武汉大学 Amorphous indium zinc oxide/indium oxide nanocrystalline homogeneous composite thin film transistor and preparation method thereof
JP6220526B2 (en) 2012-02-29 2017-10-25 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
KR20130111874A (en) 2012-04-02 2013-10-11 삼성디스플레이 주식회사 Thin film transistor, thin film transistor array panel and display device including the same, and manufacturing method of thin film transistor
US9553201B2 (en) 2012-04-02 2017-01-24 Samsung Display Co., Ltd. Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
KR20130129674A (en) 2012-05-21 2013-11-29 삼성디스플레이 주식회사 Thin film transistor and thin film transistor array panel including the same
JP6351947B2 (en) 2012-10-12 2018-07-04 株式会社半導体エネルギー研究所 Method for manufacturing liquid crystal display device
TWI555068B (en) 2012-11-08 2016-10-21 半導體能源研究所股份有限公司 Metal oxide film and method for forming metal oxide film
US9153650B2 (en) 2013-03-19 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor
JP5581416B2 (en) * 2013-04-03 2014-08-27 出光興産株式会社 Crystalline oxide semiconductor and thin film transistor using the same
TWI652822B (en) 2013-06-19 2019-03-01 日商半導體能源研究所股份有限公司 Oxide semiconductor film and formation method thereof
TWI608523B (en) 2013-07-19 2017-12-11 半導體能源研究所股份有限公司 Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device
JP6264090B2 (en) * 2013-07-31 2018-01-24 株式会社リコー FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR
JP5678149B2 (en) * 2013-08-26 2015-02-25 出光興産株式会社 Semiconductor thin film, manufacturing method thereof, thin film transistor, active matrix drive display panel
WO2015132697A1 (en) 2014-03-07 2015-09-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10664748B2 (en) 2016-03-18 2020-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and system using the same
CN111302786B (en) * 2020-03-27 2022-06-21 宁波南海泰格尔陶瓷有限公司 Preparation method of transparent zinc oxide ceramic

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100849258B1 (en) * 1999-11-25 2008-07-29 이데미쓰 고산 가부시키가이샤 Sputtering target and transparent conductive oxide
JP2003016858A (en) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd Manufacturing method of indium tin oxide film
JP4515676B2 (en) * 2001-09-20 2010-08-04 帝人株式会社 Transparent conductive laminate
JP2002319682A (en) * 2002-01-04 2002-10-31 Japan Science & Technology Corp Transistor and semiconductor device
JP2003347400A (en) * 2002-05-30 2003-12-05 Asahi Kasei Corp Method of forming semiconductor pattern
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2004235180A (en) * 2003-01-28 2004-08-19 Sanyo Electric Co Ltd Semiconductor device and its manufacturing method
JP4166105B2 (en) * 2003-03-06 2008-10-15 シャープ株式会社 Semiconductor device and manufacturing method thereof
CN100585752C (en) * 2003-05-20 2010-01-27 出光兴产株式会社 Amorphous transparent conductive film, sputtering target as raw material for amorphous transparent conductive film, amorphous transparent electrode substrate, method for producing amorphous transparent electrode substrate, and color filter for liquid crystal display
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
EP1737044B1 (en) * 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
JP5126730B2 (en) * 2004-11-10 2013-01-23 キヤノン株式会社 Method for manufacturing field effect transistor
JP4981282B2 (en) * 2005-09-06 2012-07-18 キヤノン株式会社 Thin film transistor manufacturing method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI460144B (en) * 2008-09-19 2014-11-11 Idemitsu Kosan Co Oxide sintered body and sputtering target
TWI608545B (en) * 2008-10-24 2017-12-11 半導體能源研究所股份有限公司 Method for manufacturing semiconductor device
TWI508304B (en) * 2008-11-28 2015-11-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9722054B2 (en) 2008-11-28 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI651838B (en) * 2009-09-16 2019-02-21 日商半導體能源研究所股份有限公司 Transistor
TWI779864B (en) * 2009-09-16 2022-10-01 日商半導體能源研究所股份有限公司 Transistor
TWI823547B (en) * 2009-09-16 2023-11-21 日商半導體能源研究所股份有限公司 Transistor

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