WO2009022578A1 - 素子構造およびその製造方法 - Google Patents

素子構造およびその製造方法 Download PDF

Info

Publication number
WO2009022578A1
WO2009022578A1 PCT/JP2008/064026 JP2008064026W WO2009022578A1 WO 2009022578 A1 WO2009022578 A1 WO 2009022578A1 JP 2008064026 W JP2008064026 W JP 2008064026W WO 2009022578 A1 WO2009022578 A1 WO 2009022578A1
Authority
WO
WIPO (PCT)
Prior art keywords
cured
polyimide
polyimide layer
substrate
forming
Prior art date
Application number
PCT/JP2008/064026
Other languages
English (en)
French (fr)
Inventor
Kazuhiro Yoshida
Shikou Miyazaki
Original Assignee
Murata Manufacturing Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to JP2009528085A priority Critical patent/JPWO2009022578A1/ja
Priority to EP08792212A priority patent/EP2178127A4/en
Publication of WO2009022578A1 publication Critical patent/WO2009022578A1/ja
Priority to US12/493,380 priority patent/US7998556B2/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261—Processes for packaging MEMS devices
    • B81C1/00269—Bonding of solid lids or wafers to the substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P1/00—Details of instruments
    • G01P1/02—Housings
    • G01P1/023—Housings for acceleration measuring devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/032—Gluing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24562—Interlaminar spaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
    • Y10T428/31623—Next to polyamide or polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31721—Of polyimide

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Acoustics & Sound (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)

Abstract

　第１の基板５の表面に、厚みが均等となるようにポリイミド樹脂を塗布した後、加熱して、半硬化状態のポリイミド層を形成する。その後、そのポリイミド層をキュアして、硬化状態の第１のポリイミド層６Ａを形成する。また、第２の基板７Ａの表面に、ポリイミド樹脂を厚みが均等となるように塗布した後に、加熱して、半硬化状態のポリイミド層を形成する。その後、そのポリイミド層をキュアして、硬化状態の第２のポリイミド層６Ｂを形成する。それら硬化状態の第１と第２のポリイミド層６Ａ，８Ａを、互いに押圧するように加圧し、かつ、接合温度に加熱して接合一体化する。これにより、第１の基板５と第２の基板７Ａは、ポリイミド層６Ａ，８Ａの接合体であるポリイミド層１１Ａを介して接合一体化する。
PCT/JP2008/064026 2007-08-10 2008-08-05 素子構造およびその製造方法 WO2009022578A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009528085A JPWO2009022578A1 (ja) 2007-08-10 2008-08-05 素子構造およびその製造方法
EP08792212A EP2178127A4 (en) 2007-08-10 2008-08-05 DEVICE STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF
US12/493,380 US7998556B2 (en) 2007-08-10 2009-06-29 Element structure and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007208873 2007-08-10
JP2007-208873 2007-08-10

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/493,380 Continuation US7998556B2 (en) 2007-08-10 2009-06-29 Element structure and method for producing the same

Publications (1)

Publication Number Publication Date
WO2009022578A1 true WO2009022578A1 (ja) 2009-02-19

Family

ID=40350632

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064026 WO2009022578A1 (ja) 2007-08-10 2008-08-05 素子構造およびその製造方法

Country Status (4)

Country Link
US (1) US7998556B2 (ja)
EP (1) EP2178127A4 (ja)
JP (1) JPWO2009022578A1 (ja)
WO (1) WO2009022578A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021536158A (ja) * 2019-07-19 2021-12-23 中芯集成電路（寧波）有限公司 薄膜バルク音響波共振器及びその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2977885A1 (fr) * 2011-07-12 2013-01-18 Commissariat Energie Atomique Procede de realisation d'une structure a electrode enterree par report direct et structure ainsi obtenue
JP6103906B2 (ja) * 2012-12-06 2017-03-29 スカイワークスフィルターソリューションズジャパン株式会社 弾性波装置と封止体
WO2015013828A1 (en) 2013-08-02 2015-02-05 Motion Engine Inc. Mems motion sensor and method of manufacturing
US20170030788A1 (en) 2014-04-10 2017-02-02 Motion Engine Inc. Mems pressure sensor
US11674803B2 (en) 2014-06-02 2023-06-13 Motion Engine, Inc. Multi-mass MEMS motion sensor
CA3004760A1 (en) 2014-12-09 2016-06-16 Motion Engine Inc. 3d mems magnetometer and associated methods
DE102015215530B4 (de) * 2015-08-14 2018-11-22 Continental Automotive Gmbh Herstellungsverfahren zum Herstellen eines elektromechanischen Aktors und elektromechanischer Aktor
US10301171B1 (en) 2017-11-13 2019-05-28 Globalfoundries Singapore Pte. Ltd. Wafer level packaging for MEMS device
US10793421B2 (en) * 2017-11-13 2020-10-06 Vanguard International Semiconductor Singapore Pte. Ltd. Wafer level encapsulation for MEMS device

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0682474A (ja) 1992-09-01 1994-03-22 Hitachi Ltd 半導体容量式加速度センサ
JPH06132414A (ja) 1992-02-18 1994-05-13 Nec Yamagata Ltd 半導体装置の封着方法
JPH08317670A (ja) * 1995-05-22 1996-11-29 Canon Inc 微小アクチュエイタ、その製造方法、およびそれを用いた振動ジャイロ
JPH1019924A (ja) * 1996-07-05 1998-01-23 Murata Mfg Co Ltd 小型電子部品
JP2000031349A (ja) * 1998-03-17 2000-01-28 Denso Corp 半導体装置およびその製造方法
JP2002231920A (ja) 2001-02-06 2002-08-16 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2005158975A (ja) * 2003-11-25 2005-06-16 Murata Mfg Co Ltd 電子部品及びその製造方法
JP2006179679A (ja) * 2004-12-22 2006-07-06 Fujikura Ltd フレキシブルプリント配線板及びその製造方法
JP2006189418A (ja) * 2004-12-06 2006-07-20 Denso Corp センサ装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07280832A (ja) * 1994-04-15 1995-10-27 Nippondenso Co Ltd 加速度検出装置
US6287940B1 (en) * 1999-08-02 2001-09-11 Honeywell International Inc. Dual wafer attachment process
JP2001305152A (ja) * 2000-04-18 2001-10-31 Fuji Electric Co Ltd 半導体センサチップおよびその製造方法、半導体センサチップを備えた半導体センサ
US7573723B2 (en) * 2003-02-21 2009-08-11 Alcatel-Lucent Usa Inc. Method for attaching chips in a flip-chip arrangement
CN100565848C (zh) * 2005-08-05 2009-12-02 株式会社村田制作所 电子组件制造方法和电子组件

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06132414A (ja) 1992-02-18 1994-05-13 Nec Yamagata Ltd 半導体装置の封着方法
JPH0682474A (ja) 1992-09-01 1994-03-22 Hitachi Ltd 半導体容量式加速度センサ
JPH08317670A (ja) * 1995-05-22 1996-11-29 Canon Inc 微小アクチュエイタ、その製造方法、およびそれを用いた振動ジャイロ
JPH1019924A (ja) * 1996-07-05 1998-01-23 Murata Mfg Co Ltd 小型電子部品
JP2000031349A (ja) * 1998-03-17 2000-01-28 Denso Corp 半導体装置およびその製造方法
JP2002231920A (ja) 2001-02-06 2002-08-16 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2005158975A (ja) * 2003-11-25 2005-06-16 Murata Mfg Co Ltd 電子部品及びその製造方法
JP2006189418A (ja) * 2004-12-06 2006-07-20 Denso Corp センサ装置
JP2006179679A (ja) * 2004-12-22 2006-07-06 Fujikura Ltd フレキシブルプリント配線板及びその製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2178127A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021536158A (ja) * 2019-07-19 2021-12-23 中芯集成電路（寧波）有限公司 薄膜バルク音響波共振器及びその製造方法
JP7130841B2 (ja) 2019-07-19 2022-09-05 中芯集成電路（寧波）有限公司 薄膜バルク音響波共振器及びその製造方法
US11923826B2 (en) 2019-07-19 2024-03-05 Ningbo Semiconductor International Corporation Film bulk acoustic resonator and fabrication method thereof

Also Published As

Publication number Publication date
US7998556B2 (en) 2011-08-16
US20090297770A1 (en) 2009-12-03
JPWO2009022578A1 (ja) 2010-11-11
EP2178127A4 (en) 2012-07-18
EP2178127A1 (en) 2010-04-21

Similar Documents

Publication Publication Date Title
WO2009022578A1 (ja) 素子構造およびその製造方法
JP2006005333A5 (ja)
WO2008136352A1 (ja) 半導体ウエハーの接合方法および半導体装置の製造方法
WO2010148398A3 (en) A thin-film device and method of fabricating the same
WO2007084572A3 (en) Thermal interconnect and interface systems, methods of production and uses thereof
WO2009120311A3 (en) Biolaminate composite assembly and related methods
JP2010245412A5 (ja)
EP2145732A3 (en) A multilayer chemical mechanical polishing pad manufacturing process
JP2008293000A5 (ja)
WO2010041815A3 (en) Method for preparing an abrasive sheet using an embossed substrate
WO2009001771A1 (ja) 接着フィルム、接続方法及び接合体
JP2009130104A5 (ja)
EP1976001A3 (en) Method for manufacturing semiconductor device
WO2009100698A3 (de) Verfahren zum niedertemperatur-drucksintern einer wärmesenkenplatte an das substrat einer elektronischen baugruppe
WO2010036307A3 (en) Method of assembling integrated circuit elements with a chip substrate using a thermal activatable barrier layer and the resulting product thereof
TW200727446A (en) Stack type semiconductor device manufacturing method and stack type electronic component manufacturing method
WO2007039085A8 (en) Method and device for placing thin material layers onto a relief mould
EP1993128A3 (en) Method for manufacturing soi substrate
MX2012006705A (es) Cinta adhesiva que se calienta por induccion con diferentes propiedades de despegado.
JP2004536722A5 (ja)
WO2006060583A3 (en) Method of manufacturing an upper for an article of footwear
JP2009074002A5 (ja)
JP2014022665A5 (ja)
TWI456595B (zh) 異向性導電膜及其製造方法
WO2008129784A1 (ja) 積層板の製造方法および積層板

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref document number: 2009528085

Country of ref document: JP

Kind code of ref document: A

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08792212

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008792212

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE