WO2009100698A3 - Verfahren zum niedertemperatur-drucksintern einer wärmesenkenplatte an das substrat einer elektronischen baugruppe - Google Patents

Verfahren zum niedertemperatur-drucksintern einer wärmesenkenplatte an das substrat einer elektronischen baugruppe Download PDF

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Publication number
WO2009100698A3
WO2009100698A3 PCT/DE2009/000050 DE2009000050W WO2009100698A3 WO 2009100698 A3 WO2009100698 A3 WO 2009100698A3 DE 2009000050 W DE2009000050 W DE 2009000050W WO 2009100698 A3 WO2009100698 A3 WO 2009100698A3
Authority
WO
WIPO (PCT)
Prior art keywords
heat sink
substrate
electronic unit
sink plate
temperature pressure
Prior art date
Application number
PCT/DE2009/000050
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English (en)
French (fr)
Other versions
WO2009100698A2 (de
Inventor
Ronald Eisele
Mathias Kock
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Priority to EP09709504A priority Critical patent/EP2243159A2/de
Priority to US12/866,121 priority patent/US8118211B2/en
Priority to CN2009801051597A priority patent/CN101952960B/zh
Publication of WO2009100698A2 publication Critical patent/WO2009100698A2/de
Publication of WO2009100698A3 publication Critical patent/WO2009100698A3/de

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/49531Additional leads the additional leads being a wiring board
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/29198Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298Fillers
    • H01L2224/29299Base material
    • H01L2224/293Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339Silver [Ag] as principal constituent
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/838Bonding techniques
    • H01L2224/8384Sintering
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    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/1904Component type
    • H01L2924/19043Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

Verfahren zum Niedertemperatur-Drucksintern wenigstens einer thermisch zu kontaktierenden und mechanisch fest verbundenen elektronischen und auf einem Substrat (4) befindlichen Baugruppe (3) mit den Schritten: Formpressen der elektronischen Baugruppe mit einer Formumhüllungsmatrix unter Freilassung einer Anschlussfläche des Substrates für eine Wärmesenken-Verbindung, Bereitstellen einer Wärmesenkenplatte (6), Aufbringen einer Sinter-Verbindungsschicht (5) auf den freigelassenen Bereich der Anschlussfläche und/oder auf den zur Kontaktierung vorgesehenen Bereich der Wärmesenkenplatte, und stoffschlüssiges Verbinden der Wärmesenkenplatte mittels Silber-Niedertemperatur-Drucksintertechnik an das Substrat der elektronischen Baugruppe im Bereich der Anschlussfläche.
PCT/DE2009/000050 2008-02-15 2009-01-16 Verfahren zum niedertemperatur-drucksintern WO2009100698A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP09709504A EP2243159A2 (de) 2008-02-15 2009-01-16 Verfahren zum niedertemperatur-drucksintern
US12/866,121 US8118211B2 (en) 2008-02-15 2009-01-16 Method for the low-temperature pressure sintering of electronic units to heat sinks
CN2009801051597A CN101952960B (zh) 2008-02-15 2009-01-16 低温加压烧结的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008009510A DE102008009510B3 (de) 2008-02-15 2008-02-15 Verfahren zum Niedertemperatur-Drucksintern
DE102008009510.9 2008-02-15

Publications (2)

Publication Number Publication Date
WO2009100698A2 WO2009100698A2 (de) 2009-08-20
WO2009100698A3 true WO2009100698A3 (de) 2009-12-10

Family

ID=40651328

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2009/000050 WO2009100698A2 (de) 2008-02-15 2009-01-16 Verfahren zum niedertemperatur-drucksintern

Country Status (5)

Country Link
US (1) US8118211B2 (de)
EP (1) EP2243159A2 (de)
CN (1) CN101952960B (de)
DE (1) DE102008009510B3 (de)
WO (1) WO2009100698A2 (de)

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DE102012208767A1 (de) * 2011-06-17 2012-12-20 Robert Bosch Gmbh Elektronische Schaltungsanordnung mit Verlustwärme abgebenden Komponenten
DE102011083911A1 (de) 2011-09-30 2013-04-04 Robert Bosch Gmbh Elektronische Baugruppe mit hochtemperaturstabilem Substratgrundwerkstoff
DE102012216401A1 (de) * 2012-09-14 2014-04-10 Powersem GmbH Halbleiterbauelement
US9295184B2 (en) * 2012-12-14 2016-03-22 GM Global Technology Operations LLC Scalable and modular approach for power electronic building block design in automotive applications
DE102013220591A1 (de) * 2013-10-11 2015-04-16 Robert Bosch Gmbh Leistungsmodul mit Kühlkörper
CN104867918A (zh) * 2014-02-26 2015-08-26 西安永电电气有限责任公司 塑封式ipm模块及其dbc板的固定结构
DE102014114093B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
DE102014114096A1 (de) 2014-09-29 2016-03-31 Danfoss Silicon Power Gmbh Sinterwerkzeug für den Unterstempel einer Sintervorrichtung
DE102014114097B4 (de) 2014-09-29 2017-06-01 Danfoss Silicon Power Gmbh Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe
DE102014114095B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Sintervorrichtung
DE102016107287A1 (de) * 2016-04-20 2017-11-09 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und Verfahren zum Betrieb einer Leistungshalbleitereinrichtung
DE102019204683A1 (de) * 2019-04-02 2020-10-08 Volkswagen Aktiengesellschaft Verfahren und Vorrichtung zum stoffschlüssigen Verbinden mindestens eines Halbleitermoduls mit mindestens einem Gehäuseteil eines Kühlmoduls
JP7486234B2 (ja) 2020-05-15 2024-05-17 ピンク ゲーエムベーハー テルモジステーメ 電子アセンブリを接続するためのシステム
CN114608311A (zh) * 2022-01-24 2022-06-10 快克智能装备股份有限公司 烧结设备及其气氛可控的压力烧结机构

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US20110017808A1 (en) 2011-01-27
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CN101952960A (zh) 2011-01-19
US8118211B2 (en) 2012-02-21
DE102008009510B3 (de) 2009-07-16

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