WO2009100698A3 - Verfahren zum niedertemperatur-drucksintern einer wärmesenkenplatte an das substrat einer elektronischen baugruppe - Google Patents

Verfahren zum niedertemperatur-drucksintern einer wärmesenkenplatte an das substrat einer elektronischen baugruppe Download PDF

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Publication number
WO2009100698A3
WO2009100698A3 PCT/DE2009/000050 DE2009000050W WO2009100698A3 WO 2009100698 A3 WO2009100698 A3 WO 2009100698A3 DE 2009000050 W DE2009000050 W DE 2009000050W WO 2009100698 A3 WO2009100698 A3 WO 2009100698A3
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WO
WIPO (PCT)
Prior art keywords
heat sink
substrate
electronic unit
sink plate
temperature pressure
Prior art date
Application number
PCT/DE2009/000050
Other languages
English (en)
French (fr)
Other versions
WO2009100698A2 (de
Inventor
Ronald Eisele
Mathias Kock
Original Assignee
Danfoss Silicon Power Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Priority to US12/866,121 priority Critical patent/US8118211B2/en
Priority to EP09709504A priority patent/EP2243159A2/de
Priority to CN2009801051597A priority patent/CN101952960B/zh
Publication of WO2009100698A2 publication Critical patent/WO2009100698A2/de
Publication of WO2009100698A3 publication Critical patent/WO2009100698A3/de

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/49531—Additional leads the additional leads being a wiring board
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
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    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
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    • H01L25/165—Containers
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Abstract

Verfahren zum Niedertemperatur-Drucksintern wenigstens einer thermisch zu kontaktierenden und mechanisch fest verbundenen elektronischen und auf einem Substrat (4) befindlichen Baugruppe (3) mit den Schritten: Formpressen der elektronischen Baugruppe mit einer Formumhüllungsmatrix unter Freilassung einer Anschlussfläche des Substrates für eine Wärmesenken-Verbindung, Bereitstellen einer Wärmesenkenplatte (6), Aufbringen einer Sinter-Verbindungsschicht (5) auf den freigelassenen Bereich der Anschlussfläche und/oder auf den zur Kontaktierung vorgesehenen Bereich der Wärmesenkenplatte, und stoffschlüssiges Verbinden der Wärmesenkenplatte mittels Silber-Niedertemperatur-Drucksintertechnik an das Substrat der elektronischen Baugruppe im Bereich der Anschlussfläche.
PCT/DE2009/000050 2008-02-15 2009-01-16 Verfahren zum niedertemperatur-drucksintern WO2009100698A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/866,121 US8118211B2 (en) 2008-02-15 2009-01-16 Method for the low-temperature pressure sintering of electronic units to heat sinks
EP09709504A EP2243159A2 (de) 2008-02-15 2009-01-16 Verfahren zum niedertemperatur-drucksintern
CN2009801051597A CN101952960B (zh) 2008-02-15 2009-01-16 低温加压烧结的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008009510A DE102008009510B3 (de) 2008-02-15 2008-02-15 Verfahren zum Niedertemperatur-Drucksintern
DE102008009510.9 2008-02-15

Publications (2)

Publication Number Publication Date
WO2009100698A2 WO2009100698A2 (de) 2009-08-20
WO2009100698A3 true WO2009100698A3 (de) 2009-12-10

Family

ID=40651328

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2009/000050 WO2009100698A2 (de) 2008-02-15 2009-01-16 Verfahren zum niedertemperatur-drucksintern

Country Status (5)

Country Link
US (1) US8118211B2 (de)
EP (1) EP2243159A2 (de)
CN (1) CN101952960B (de)
DE (1) DE102008009510B3 (de)
WO (1) WO2009100698A2 (de)

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CN103222047B (zh) * 2010-11-22 2016-01-06 株式会社东芝 用于压力接触结构的陶瓷热沉材料、使用其的半导体模块和用于制造半导体模块的方法
DE102011076774A1 (de) * 2011-05-31 2012-12-06 Continental Automotive Gmbh Baugruppe mit einem Träger und einem Kühlkörper
DE102012208767A1 (de) * 2011-06-17 2012-12-20 Robert Bosch Gmbh Elektronische Schaltungsanordnung mit Verlustwärme abgebenden Komponenten
DE102011083911A1 (de) 2011-09-30 2013-04-04 Robert Bosch Gmbh Elektronische Baugruppe mit hochtemperaturstabilem Substratgrundwerkstoff
DE102012216401A1 (de) * 2012-09-14 2014-04-10 Powersem GmbH Halbleiterbauelement
US9295184B2 (en) * 2012-12-14 2016-03-22 GM Global Technology Operations LLC Scalable and modular approach for power electronic building block design in automotive applications
DE102013220591A1 (de) * 2013-10-11 2015-04-16 Robert Bosch Gmbh Leistungsmodul mit Kühlkörper
CN104867918A (zh) * 2014-02-26 2015-08-26 西安永电电气有限责任公司 塑封式ipm模块及其dbc板的固定结构
DE102014114096A1 (de) 2014-09-29 2016-03-31 Danfoss Silicon Power Gmbh Sinterwerkzeug für den Unterstempel einer Sintervorrichtung
DE102014114095B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Sintervorrichtung
DE102014114097B4 (de) 2014-09-29 2017-06-01 Danfoss Silicon Power Gmbh Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe
DE102014114093B4 (de) 2014-09-29 2017-03-23 Danfoss Silicon Power Gmbh Verfahren zum Niedertemperatur-Drucksintern
DE102016107287A1 (de) * 2016-04-20 2017-11-09 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitereinrichtung und Verfahren zum Betrieb einer Leistungshalbleitereinrichtung
DE102019204683A1 (de) * 2019-04-02 2020-10-08 Volkswagen Aktiengesellschaft Verfahren und Vorrichtung zum stoffschlüssigen Verbinden mindestens eines Halbleitermoduls mit mindestens einem Gehäuseteil eines Kühlmoduls
MX2022014325A (es) 2020-05-15 2022-12-08 Pink Gmbh Thermosysteme Instalacion para unir conjuntos electronicos.
CN114608311A (zh) * 2022-01-24 2022-06-10 快克智能装备股份有限公司 烧结设备及其气氛可控的压力烧结机构

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US20110017808A1 (en) 2011-01-27
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