WO2009100698A3 - Verfahren zum niedertemperatur-drucksintern einer wärmesenkenplatte an das substrat einer elektronischen baugruppe - Google Patents
Verfahren zum niedertemperatur-drucksintern einer wärmesenkenplatte an das substrat einer elektronischen baugruppe Download PDFInfo
- Publication number
- WO2009100698A3 WO2009100698A3 PCT/DE2009/000050 DE2009000050W WO2009100698A3 WO 2009100698 A3 WO2009100698 A3 WO 2009100698A3 DE 2009000050 W DE2009000050 W DE 2009000050W WO 2009100698 A3 WO2009100698 A3 WO 2009100698A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- heat sink
- substrate
- electronic unit
- sink plate
- temperature pressure
- Prior art date
Links
- 238000005245 sintering Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49531—Additional leads the additional leads being a wiring board
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
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- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
Abstract
Verfahren zum Niedertemperatur-Drucksintern wenigstens einer thermisch zu kontaktierenden und mechanisch fest verbundenen elektronischen und auf einem Substrat (4) befindlichen Baugruppe (3) mit den Schritten: Formpressen der elektronischen Baugruppe mit einer Formumhüllungsmatrix unter Freilassung einer Anschlussfläche des Substrates für eine Wärmesenken-Verbindung, Bereitstellen einer Wärmesenkenplatte (6), Aufbringen einer Sinter-Verbindungsschicht (5) auf den freigelassenen Bereich der Anschlussfläche und/oder auf den zur Kontaktierung vorgesehenen Bereich der Wärmesenkenplatte, und stoffschlüssiges Verbinden der Wärmesenkenplatte mittels Silber-Niedertemperatur-Drucksintertechnik an das Substrat der elektronischen Baugruppe im Bereich der Anschlussfläche.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09709504A EP2243159A2 (de) | 2008-02-15 | 2009-01-16 | Verfahren zum niedertemperatur-drucksintern |
US12/866,121 US8118211B2 (en) | 2008-02-15 | 2009-01-16 | Method for the low-temperature pressure sintering of electronic units to heat sinks |
CN2009801051597A CN101952960B (zh) | 2008-02-15 | 2009-01-16 | 低温加压烧结的方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008009510A DE102008009510B3 (de) | 2008-02-15 | 2008-02-15 | Verfahren zum Niedertemperatur-Drucksintern |
DE102008009510.9 | 2008-02-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009100698A2 WO2009100698A2 (de) | 2009-08-20 |
WO2009100698A3 true WO2009100698A3 (de) | 2009-12-10 |
Family
ID=40651328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2009/000050 WO2009100698A2 (de) | 2008-02-15 | 2009-01-16 | Verfahren zum niedertemperatur-drucksintern |
Country Status (5)
Country | Link |
---|---|
US (1) | US8118211B2 (de) |
EP (1) | EP2243159A2 (de) |
CN (1) | CN101952960B (de) |
DE (1) | DE102008009510B3 (de) |
WO (1) | WO2009100698A2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101472234B1 (ko) * | 2010-11-22 | 2014-12-11 | 가부시끼가이샤 도시바 | 압접 구조용 세라믹 히트 싱크재, 그를 이용한 반도체 모듈 및 반도체 모듈의 제조 방법 |
DE102011076774A1 (de) * | 2011-05-31 | 2012-12-06 | Continental Automotive Gmbh | Baugruppe mit einem Träger und einem Kühlkörper |
DE102012208767A1 (de) * | 2011-06-17 | 2012-12-20 | Robert Bosch Gmbh | Elektronische Schaltungsanordnung mit Verlustwärme abgebenden Komponenten |
DE102011083911A1 (de) | 2011-09-30 | 2013-04-04 | Robert Bosch Gmbh | Elektronische Baugruppe mit hochtemperaturstabilem Substratgrundwerkstoff |
DE102012216401A1 (de) * | 2012-09-14 | 2014-04-10 | Powersem GmbH | Halbleiterbauelement |
US9295184B2 (en) * | 2012-12-14 | 2016-03-22 | GM Global Technology Operations LLC | Scalable and modular approach for power electronic building block design in automotive applications |
DE102013220591A1 (de) * | 2013-10-11 | 2015-04-16 | Robert Bosch Gmbh | Leistungsmodul mit Kühlkörper |
CN104867918A (zh) * | 2014-02-26 | 2015-08-26 | 西安永电电气有限责任公司 | 塑封式ipm模块及其dbc板的固定结构 |
DE102014114093B4 (de) | 2014-09-29 | 2017-03-23 | Danfoss Silicon Power Gmbh | Verfahren zum Niedertemperatur-Drucksintern |
DE102014114096A1 (de) | 2014-09-29 | 2016-03-31 | Danfoss Silicon Power Gmbh | Sinterwerkzeug für den Unterstempel einer Sintervorrichtung |
DE102014114097B4 (de) | 2014-09-29 | 2017-06-01 | Danfoss Silicon Power Gmbh | Sinterwerkzeug und Verfahren zum Sintern einer elektronischen Baugruppe |
DE102014114095B4 (de) | 2014-09-29 | 2017-03-23 | Danfoss Silicon Power Gmbh | Sintervorrichtung |
DE102016107287A1 (de) * | 2016-04-20 | 2017-11-09 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung und Verfahren zum Betrieb einer Leistungshalbleitereinrichtung |
DE102019204683A1 (de) * | 2019-04-02 | 2020-10-08 | Volkswagen Aktiengesellschaft | Verfahren und Vorrichtung zum stoffschlüssigen Verbinden mindestens eines Halbleitermoduls mit mindestens einem Gehäuseteil eines Kühlmoduls |
JP7486234B2 (ja) | 2020-05-15 | 2024-05-17 | ピンク ゲーエムベーハー テルモジステーメ | 電子アセンブリを接続するためのシステム |
CN114608311A (zh) * | 2022-01-24 | 2022-06-10 | 快克智能装备股份有限公司 | 烧结设备及其气氛可控的压力烧结机构 |
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EP0693776A2 (de) * | 1994-07-15 | 1996-01-24 | Mitsubishi Materials Corporation | Keramik-Gehäuse mit hoher Wärmeabstrahlung |
WO2002049104A2 (de) * | 2000-12-13 | 2002-06-20 | Daimlerchrysler Ag | Leistungsmodul mit verbessertem transienten wärmewiderstand |
DE10200372A1 (de) * | 2002-01-08 | 2003-07-24 | Siemens Ag | Leistungshalbleitermodul |
DE102005061772A1 (de) * | 2005-12-23 | 2007-07-05 | Danfoss Silicon Power Gmbh | Leistungshalbleitermodul |
DE102006009159A1 (de) * | 2006-02-21 | 2007-08-23 | Curamik Electronics Gmbh | Verfahren zum Herstellen eines Verbundsubstrates sowie Verbundsubstrat |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3780795A (en) * | 1972-06-19 | 1973-12-25 | Rca Corp | Multilayer heat sink |
DE3777995D1 (de) * | 1986-12-22 | 1992-05-07 | Siemens Ag | Verfahren zur befestigung von elektronischen bauelementen auf einem substrat, folie zur durchfuehrung des verfahrens und verfahren zur herstellung der folie. |
EP0460286A3 (en) * | 1990-06-06 | 1992-02-26 | Siemens Aktiengesellschaft | Method and arrangement for bonding a semiconductor component to a substrate or for finishing a semiconductor/substrate connection by contactless pressing |
DE4233073A1 (de) * | 1992-10-01 | 1994-04-07 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-Modulaufbaus |
US5786635A (en) * | 1996-12-16 | 1998-07-28 | International Business Machines Corporation | Electronic package with compressible heatsink structure |
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- 2009-01-16 CN CN2009801051597A patent/CN101952960B/zh active Active
- 2009-01-16 US US12/866,121 patent/US8118211B2/en active Active
- 2009-01-16 WO PCT/DE2009/000050 patent/WO2009100698A2/de active Application Filing
- 2009-01-16 EP EP09709504A patent/EP2243159A2/de not_active Withdrawn
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Also Published As
Publication number | Publication date |
---|---|
WO2009100698A2 (de) | 2009-08-20 |
US20110017808A1 (en) | 2011-01-27 |
EP2243159A2 (de) | 2010-10-27 |
CN101952960B (zh) | 2012-07-11 |
CN101952960A (zh) | 2011-01-19 |
US8118211B2 (en) | 2012-02-21 |
DE102008009510B3 (de) | 2009-07-16 |
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