DE102005061773B3 - Verfahren zum Herstellen eines Leistungshalbleitermoduls und Leistungshalbleitermodul - Google Patents

Verfahren zum Herstellen eines Leistungshalbleitermoduls und Leistungshalbleitermodul Download PDF

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Publication number
DE102005061773B3
DE102005061773B3 DE102005061773A DE102005061773A DE102005061773B3 DE 102005061773 B3 DE102005061773 B3 DE 102005061773B3 DE 102005061773 A DE102005061773 A DE 102005061773A DE 102005061773 A DE102005061773 A DE 102005061773A DE 102005061773 B3 DE102005061773 B3 DE 102005061773B3
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Prior art keywords
carrier
module
power semiconductor
plastic
pressure element
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Expired - Fee Related
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DE102005061773A
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English (en)
Inventor
Ronald Eisele
Jens Klinghagen
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Danfoss Silicon Power GmbH
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Danfoss Silicon Power GmbH
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Priority to DE102005061773A priority Critical patent/DE102005061773B3/de
Application granted granted Critical
Publication of DE102005061773B3 publication Critical patent/DE102005061773B3/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Es wird ein Verfahren zum Herstellen eines Leistungshalbleitermoduls und ein Leistungshalbleitermodul angegeben, bei dem ein mit mindestens einem Leistungshalbleiterbauelement (5) bestückter Träger (2) in eine Form (9, 12) eingelegt wird, die Form (9, 12) geschlossen wird, der Träger (2) mit Hilfe mindestens eines Stempels (14) gegen eine Innenwand (10) der Form (9, 12) gepresst wird und ein Kunststoff in die Form (9, 12) gefüllt wird. DOLLAR A Man möchte die Herstellung eines derartigen Leistungshalbleitermoduls vereinfachen. DOLLAR A Hierzu ist vorgesehen, dass man den Stempel (14) während und nach dem Aushärten des Kunststoffs im Leistungshalbleitermodul belässt.
DE102005061773A 2005-12-23 2005-12-23 Verfahren zum Herstellen eines Leistungshalbleitermoduls und Leistungshalbleitermodul Expired - Fee Related DE102005061773B3 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE102005061773A DE102005061773B3 (de) 2005-12-23 2005-12-23 Verfahren zum Herstellen eines Leistungshalbleitermoduls und Leistungshalbleitermodul

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102005061773A DE102005061773B3 (de) 2005-12-23 2005-12-23 Verfahren zum Herstellen eines Leistungshalbleitermoduls und Leistungshalbleitermodul

Publications (1)

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DE102005061773B3 true DE102005061773B3 (de) 2007-05-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007020618B3 (de) * 2007-04-30 2008-10-30 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul
US8118211B2 (en) * 2008-02-15 2012-02-21 Danfoss Silicon Power Gmbh Method for the low-temperature pressure sintering of electronic units to heat sinks

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4233073A1 (de) * 1992-10-01 1994-04-07 Siemens Ag Verfahren zum Herstellen eines Halbleiter-Modulaufbaus
DE4407810A1 (de) * 1994-03-09 1995-09-21 Semikron Elektronik Gmbh Schaltungsanordnung
US6433420B1 (en) * 2001-02-13 2002-08-13 Siliconware Precision Industries Co., Ltd. Semiconductor package with heat sink having air vent
US6432749B1 (en) * 1999-08-24 2002-08-13 Texas Instruments Incorporated Method of fabricating flip chip IC packages with heat spreaders in strip format
DE10126508A1 (de) * 2001-05-30 2002-12-05 Infineon Technologies Ag Vorrichtung zum Verpacken von elektronischen Bauteilen mittels Spritzgusstechnik
US6562655B1 (en) * 2001-04-20 2003-05-13 Amkor Technology, Inc. Heat spreader with spring IC package fabrication method
US6933176B1 (en) * 2002-07-19 2005-08-23 Asat Ltd. Ball grid array package and process for manufacturing same
DE102004011808A1 (de) * 2004-03-11 2005-09-29 Robert Bosch Gmbh Leistungsmodul

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4233073A1 (de) * 1992-10-01 1994-04-07 Siemens Ag Verfahren zum Herstellen eines Halbleiter-Modulaufbaus
DE4407810A1 (de) * 1994-03-09 1995-09-21 Semikron Elektronik Gmbh Schaltungsanordnung
US6432749B1 (en) * 1999-08-24 2002-08-13 Texas Instruments Incorporated Method of fabricating flip chip IC packages with heat spreaders in strip format
US6433420B1 (en) * 2001-02-13 2002-08-13 Siliconware Precision Industries Co., Ltd. Semiconductor package with heat sink having air vent
US6562655B1 (en) * 2001-04-20 2003-05-13 Amkor Technology, Inc. Heat spreader with spring IC package fabrication method
DE10126508A1 (de) * 2001-05-30 2002-12-05 Infineon Technologies Ag Vorrichtung zum Verpacken von elektronischen Bauteilen mittels Spritzgusstechnik
US6933176B1 (en) * 2002-07-19 2005-08-23 Asat Ltd. Ball grid array package and process for manufacturing same
DE102004011808A1 (de) * 2004-03-11 2005-09-29 Robert Bosch Gmbh Leistungsmodul

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007020618B3 (de) * 2007-04-30 2008-10-30 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul
DE102007020618B8 (de) * 2007-04-30 2009-03-12 Danfoss Silicon Power Gmbh Verfahren zum Herstellen eines festen Leistungsmoduls und damit hergestelltes Transistormodul
US8118211B2 (en) * 2008-02-15 2012-02-21 Danfoss Silicon Power Gmbh Method for the low-temperature pressure sintering of electronic units to heat sinks

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8100 Publication of patent without earlier publication of application
8364 No opposition during term of opposition
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20130702