WO2008105503A1 - 撥水性領域のパターンを有する処理基材、その製造方法、および機能性材料の膜からなるパターンが形成された部材の製造方法 - Google Patents

撥水性領域のパターンを有する処理基材、その製造方法、および機能性材料の膜からなるパターンが形成された部材の製造方法 Download PDF

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Publication number
WO2008105503A1
WO2008105503A1 PCT/JP2008/053533 JP2008053533W WO2008105503A1 WO 2008105503 A1 WO2008105503 A1 WO 2008105503A1 JP 2008053533 W JP2008053533 W JP 2008053533W WO 2008105503 A1 WO2008105503 A1 WO 2008105503A1
Authority
WO
WIPO (PCT)
Prior art keywords
production
water
patterms
patterns
members
Prior art date
Application number
PCT/JP2008/053533
Other languages
English (en)
French (fr)
Inventor
Yutaka Furukawa
Original Assignee
Asahi Glass Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Company, Limited filed Critical Asahi Glass Company, Limited
Priority to JP2009501300A priority Critical patent/JP5177129B2/ja
Priority to EP08712104A priority patent/EP2116900A4/en
Priority to CN2008800065333A priority patent/CN101622579B/zh
Publication of WO2008105503A1 publication Critical patent/WO2008105503A1/ja
Priority to US12/551,863 priority patent/US20090317608A1/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/18Materials not provided for elsewhere for application to surfaces to minimize adherence of ice, mist or water thereto; Thawing or antifreeze materials for application to surfaces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

 コントラストの高い撥水性領域を表面に有する処理基材、その製造方法、の提供。  基材の表面に撥水性領域のパターンを有する処理基材であって、撥水性領域は、ケイ素原子に結合した水素原子と光硬化性基とを有するオルガノポリシロキサン(A1)を、または、ケイ素原子に結合した水素原子を有し、光硬化性基を有しないオルガノポリシロキサン(A2)と光硬化性基を有する化合物(B)とを、含み、さらに任意に光硬化促進化合物(C)を含む、硬化性組成物を硬化させた撥水性硬化膜からなることを特徴とする処理基材。
PCT/JP2008/053533 2007-03-01 2008-02-28 撥水性領域のパターンを有する処理基材、その製造方法、および機能性材料の膜からなるパターンが形成された部材の製造方法 WO2008105503A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009501300A JP5177129B2 (ja) 2007-03-01 2008-02-28 撥水性領域のパターンを有する処理基材、その製造方法、および機能性材料の膜からなるパターンが形成された部材の製造方法
EP08712104A EP2116900A4 (en) 2007-03-01 2008-02-28 PROCESSED SUBSTRATES WITH WATER-REPELLENT AREAS IN PATTERNS, MANUFACTURING PROCESS THEREFOR AND PROCESS FOR PRODUCING MEMBERS WITH PATTERNS PRODUCED FROM FUNCTIONAL MATERIALS
CN2008800065333A CN101622579B (zh) 2007-03-01 2008-02-28 具有斥水性区域的图案的处理基材及其制造方法、以及形成有功能性材料的膜构成的图案的构件的制造方法
US12/551,863 US20090317608A1 (en) 2007-03-01 2009-09-01 Treated substrate having pattern of water repellent region, its production process, and process for producing member having pattern made of functional material film formed

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007051623 2007-03-01
JP2007-051623 2007-03-01

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/551,863 Continuation US20090317608A1 (en) 2007-03-01 2009-09-01 Treated substrate having pattern of water repellent region, its production process, and process for producing member having pattern made of functional material film formed

Publications (1)

Publication Number Publication Date
WO2008105503A1 true WO2008105503A1 (ja) 2008-09-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053533 WO2008105503A1 (ja) 2007-03-01 2008-02-28 撥水性領域のパターンを有する処理基材、その製造方法、および機能性材料の膜からなるパターンが形成された部材の製造方法

Country Status (7)

Country Link
US (1) US20090317608A1 (ja)
EP (1) EP2116900A4 (ja)
JP (1) JP5177129B2 (ja)
KR (1) KR20090123851A (ja)
CN (1) CN101622579B (ja)
TW (1) TW200915004A (ja)
WO (1) WO2008105503A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014034688A1 (ja) * 2012-08-30 2014-03-06 東京応化工業株式会社 基板表面の改質方法、改質膜、及び基板表面の改質に用いられる被覆溶液
JP2018011066A (ja) * 2011-09-30 2018-01-18 サンパワー コーポレイション シリコン基板における拡散領域の形成方法
WO2019073878A1 (ja) * 2017-10-11 2019-04-18 株式会社ニコン 化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法
JP2021521472A (ja) * 2018-04-24 2021-08-26 ダウ シリコーンズ コーポレーション ポジ型光パターン形成が可能なシリコーン
US11953833B2 (en) 2017-10-11 2024-04-09 Nikon Corporation Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method

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EP2375286A3 (en) * 2006-03-06 2012-04-04 Asahi Glass Company, Limited Treated substratum with hydrophilic region and water-repellent region and process for producing the same
CN103249552B (zh) * 2010-12-08 2015-04-08 旭硝子株式会社 带粘合层的透明面材、显示装置及它们的制造方法
US9086626B2 (en) * 2011-03-29 2015-07-21 Dow Corning Corporation Photo-patternable and developable silsesquioxane resins for use in device fabrication
JP5767615B2 (ja) * 2011-10-07 2015-08-19 富士フイルム株式会社 インプリント用下層膜組成物およびこれを用いたパターン形成方法
TWI481858B (zh) * 2013-06-05 2015-04-21 Ind Tech Res Inst 拉曼散射增強基板
JPWO2019177120A1 (ja) * 2018-03-16 2021-03-25 Agc株式会社 膜付き基材
WO2021059879A1 (ja) * 2019-09-27 2021-04-01 富士フイルム株式会社 画像記録方法
KR102502849B1 (ko) * 2020-11-24 2023-02-23 창원대학교 산학협력단 패턴 제조장치 및 이를 이용한 패턴의 제조방법

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JP2005042050A (ja) * 2003-07-24 2005-02-17 Dow Corning Asia Ltd 硬化性シリコーン組成物、及びこれを用いたパターン形成方法
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JP2006177989A (ja) * 2004-12-20 2006-07-06 Dow Corning Toray Co Ltd 活性化エネルギー線硬化性シリコーン組成物及びそれを用いたネガ型パターン形成方法

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018011066A (ja) * 2011-09-30 2018-01-18 サンパワー コーポレイション シリコン基板における拡散領域の形成方法
WO2014034688A1 (ja) * 2012-08-30 2014-03-06 東京応化工業株式会社 基板表面の改質方法、改質膜、及び基板表面の改質に用いられる被覆溶液
JPWO2014034688A1 (ja) * 2012-08-30 2016-08-08 東京応化工業株式会社 基板表面の改質方法、改質膜、及び基板表面の改質に用いられる被覆溶液
WO2019073878A1 (ja) * 2017-10-11 2019-04-18 株式会社ニコン 化合物、パターン形成用基板、光分解性カップリング剤、パターン形成方法及びトランジスタの製造方法
US11953833B2 (en) 2017-10-11 2024-04-09 Nikon Corporation Compound, substrate for pattern formation, photodegradable coupling agent, pattern formation method, and transistor production method
JP2021521472A (ja) * 2018-04-24 2021-08-26 ダウ シリコーンズ コーポレーション ポジ型光パターン形成が可能なシリコーン
JP7307090B2 (ja) 2018-04-24 2023-07-11 ダウ シリコーンズ コーポレーション ポジ型光パターン形成が可能なシリコーン

Also Published As

Publication number Publication date
TW200915004A (en) 2009-04-01
CN101622579A (zh) 2010-01-06
JP5177129B2 (ja) 2013-04-03
CN101622579B (zh) 2012-09-05
US20090317608A1 (en) 2009-12-24
EP2116900A4 (en) 2012-06-27
EP2116900A1 (en) 2009-11-11
JPWO2008105503A1 (ja) 2010-06-03
KR20090123851A (ko) 2009-12-02

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