WO2008081841A1 - ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法 - Google Patents

ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法 Download PDF

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Publication number
WO2008081841A1
WO2008081841A1 PCT/JP2007/075031 JP2007075031W WO2008081841A1 WO 2008081841 A1 WO2008081841 A1 WO 2008081841A1 JP 2007075031 W JP2007075031 W JP 2007075031W WO 2008081841 A1 WO2008081841 A1 WO 2008081841A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering target
cocrpt
chromium
based sputtering
production
Prior art date
Application number
PCT/JP2007/075031
Other languages
English (en)
French (fr)
Inventor
Kazuteru Kato
Nobukazu Hayashi
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to US12/306,427 priority Critical patent/US20090308740A1/en
Priority to CN200780027834XA priority patent/CN101495667B/zh
Publication of WO2008081841A1 publication Critical patent/WO2008081841A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0433—Nickel- or cobalt-based alloys
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C22C1/1084—Alloys containing non-metals by mechanical alloying (blending, milling)
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
    • B22F2998/10—Processes characterised by the sequence of their steps

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)

Abstract

　本発明は、ＣｏＣｒＰｔ系スパッタリングターゲットにおいて、該スパッタリングターゲットに偏在する、クロム原子を高濃度で含有する高クロム含有粒子のサイズおよび発生量を低減することにより、ターゲットの均質性を高め、かつノジュールまたはアーキングの発生を抑制するとともに、目標とする組成比を有するＣｏＣｒＰｔ系スパッタリングターゲットを提供することを課題としている。 　本発明のＣｏＣｒＰｔ系スパッタリングターゲットは、コバルト、クロム、セラミックスおよび白金を含有するスパッタリングターゲットであって、該スパッタリングターゲットに偏在する、クロム原子を高濃度で含有する高クロム含有粒子の最大差し渡し径が４０μｍ以下であることを特徴としている。
PCT/JP2007/075031 2007-01-04 2007-12-26 ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法 WO2008081841A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/306,427 US20090308740A1 (en) 2007-01-04 2007-12-26 CoCrPt Base Sputtering Target and Production Process for the Same
CN200780027834XA CN101495667B (zh) 2007-01-04 2007-12-26 CoCrPt系溅射靶及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-000165 2007-01-04
JP2007000165A JP5155565B2 (ja) 2007-01-04 2007-01-04 ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法

Publications (1)

Publication Number Publication Date
WO2008081841A1 true WO2008081841A1 (ja) 2008-07-10

Family

ID=39588523

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/075031 WO2008081841A1 (ja) 2007-01-04 2007-12-26 ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法

Country Status (5)

Country Link
US (1) US20090308740A1 (ja)
JP (1) JP5155565B2 (ja)
CN (1) CN101495667B (ja)
TW (1) TW200837209A (ja)
WO (1) WO2008081841A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010110033A1 (ja) * 2009-03-27 2010-09-30 日鉱金属株式会社 非磁性材粒子分散型強磁性材スパッタリングターゲット
WO2023037810A1 (ja) * 2021-09-08 2023-03-16 田中貴金属工業株式会社 硬質窒化物含有スパッタリングターゲット

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009119812A1 (ja) * 2008-03-28 2009-10-01 日鉱金属株式会社 非磁性材粒子分散型強磁性材スパッタリングターゲット
TWI396759B (zh) * 2008-06-18 2013-05-21 China Steel Corp A method for producing a metal - based ceramic composite target containing noble metal
US20110003177A1 (en) * 2009-07-06 2011-01-06 Solar Applied Materials Technology Corp. Method for producing sputtering target containing boron, thin film and magnetic recording media
JP4870855B2 (ja) 2009-08-06 2012-02-08 Ｊｘ日鉱日石金属株式会社 無機物粒子分散型スパッタリングターゲット
MY160809A (en) 2009-12-11 2017-03-31 Jx Nippon Mining & Metals Corp Sputteering target of magnetic material
SG175953A1 (en) 2010-01-21 2011-12-29 Jx Nippon Mining & Metals Corp Ferromagnetic-material sputtering target
JP5375707B2 (ja) * 2010-03-28 2013-12-25 三菱マテリアル株式会社 磁気記録膜形成用スパッタリングターゲットおよびその製造方法
TWI402366B (zh) * 2010-03-30 2013-07-21 China Steel Corp 鈷合金複合陶瓷濺鍍靶材之製造方法
US9181617B2 (en) * 2010-07-20 2015-11-10 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
US8679268B2 (en) * 2010-07-20 2014-03-25 Jx Nippon Mining & Metals Corporation Sputtering target of ferromagnetic material with low generation of particles
JP4758522B1 (ja) * 2010-07-20 2011-08-31 Ｊｘ日鉱日石金属株式会社 パーティクル発生の少ない強磁性材スパッタリングターゲット
JP4871406B1 (ja) 2010-08-06 2012-02-08 田中貴金属工業株式会社 マグネトロンスパッタリング用ターゲットおよびその製造方法
JP5748639B2 (ja) * 2011-11-17 2015-07-15 田中貴金属工業株式会社 マグネトロンスパッタリング用ターゲットおよびその製造方法
JP5863411B2 (ja) * 2011-11-17 2016-02-16 田中貴金属工業株式会社 マグネトロンスパッタリング用ターゲットおよびその製造方法
TWI504768B (zh) 2012-01-13 2015-10-21 Tanaka Precious Metal Ind FePt sputtering target and its manufacturing method
SG11201403857TA (en) 2012-01-18 2014-09-26 Jx Nippon Mining & Metals Corp Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
CN102978576B (zh) * 2012-12-03 2014-12-31 苏州晶纯新材料有限公司 一种高致密铬合金靶材的生产方法
CN109923610B (zh) * 2016-11-01 2021-01-29 田中贵金属工业株式会社 磁记录介质用溅射靶

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0925566A (ja) * 1995-07-10 1997-01-28 Sony Corp スパッタリング用ターゲットの製造方法
JP2001236643A (ja) * 2000-02-23 2001-08-31 Fuji Electric Co Ltd 磁気記録媒体製造用スパッタリングターゲット、それを用いた磁気記録媒体の製造方法および磁気記録媒体
JP2006176810A (ja) * 2004-12-21 2006-07-06 Mitsubishi Materials Corp 磁気記録膜形成用ＣｏＣｒＰｔ−ＳｉＯ２スパッタリングターゲットの製造方法
JP2007291512A (ja) * 2006-03-31 2007-11-08 Mitsubishi Materials Corp パーティクル発生の少ない磁気記録膜形成用Ｃｏ基焼結合金スパッタリングターゲットの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE50108396D1 (de) * 2000-07-01 2006-01-19 Clondiag Chip Tech Gmbh Verfahren zum qualitativen und/oder quantitativen nachweis von molekularen wechselwirkungen auf sonden-arrays
WO2003000950A1 (en) * 2001-02-20 2003-01-03 Honeywell International Inc. Topologically tailored sputtering targets
US6797137B2 (en) * 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
JP4934926B2 (ja) * 2001-08-10 2012-05-23 東ソー株式会社 Ｉｔｏスパッタリングターゲットおよびその製造方法
TW200407262A (en) * 2002-09-30 2004-05-16 Showa Denko Kk Metal oxide structure containing titanium oxide and production method and use thereof
US7842281B2 (en) * 2004-05-10 2010-11-30 The Florida State University Research Foundation Magnetic particle composition for therapeutic hyperthermia
JP4422574B2 (ja) * 2004-07-30 2010-02-24 三井金属鉱業株式会社 セラミックス−金属複合材料からなるスパッタリングターゲット材およびその製造方法
JP2006045687A (ja) * 2004-07-30 2006-02-16 Wako Co Ltd エプロン
US20100270146A1 (en) * 2006-03-31 2010-10-28 Mitsubishi Materials Corporation Method for manufacturing co-base sintered alloy sputtering target for formation of magnetic recording film which is less likely to generate partricles, and co-base sintered alloy sputtering target for formation of magnetic recording film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0925566A (ja) * 1995-07-10 1997-01-28 Sony Corp スパッタリング用ターゲットの製造方法
JP2001236643A (ja) * 2000-02-23 2001-08-31 Fuji Electric Co Ltd 磁気記録媒体製造用スパッタリングターゲット、それを用いた磁気記録媒体の製造方法および磁気記録媒体
JP2006176810A (ja) * 2004-12-21 2006-07-06 Mitsubishi Materials Corp 磁気記録膜形成用ＣｏＣｒＰｔ−ＳｉＯ２スパッタリングターゲットの製造方法
JP2007291512A (ja) * 2006-03-31 2007-11-08 Mitsubishi Materials Corp パーティクル発生の少ない磁気記録膜形成用Ｃｏ基焼結合金スパッタリングターゲットの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010110033A1 (ja) * 2009-03-27 2010-09-30 日鉱金属株式会社 非磁性材粒子分散型強磁性材スパッタリングターゲット
JP4673448B2 (ja) * 2009-03-27 2011-04-20 Ｊｘ日鉱日石金属株式会社 非磁性材粒子分散型強磁性材スパッタリングターゲット
US20110247930A1 (en) * 2009-03-27 2011-10-13 Jx Nippon Mining & Metals Corporation Nonmagnetic Material Particle-Dispersed Ferromagnetic Material Sputtering Target
US9103023B2 (en) * 2009-03-27 2015-08-11 Jx Nippon Mining & Metals Corporation Nonmagnetic material particle-dispersed ferromagnetic material sputtering target
WO2023037810A1 (ja) * 2021-09-08 2023-03-16 田中貴金属工業株式会社 硬質窒化物含有スパッタリングターゲット

Also Published As

Publication number Publication date
TW200837209A (en) 2008-09-16
CN101495667A (zh) 2009-07-29
TWI379915B (ja) 2012-12-21
JP2008163438A (ja) 2008-07-17
JP5155565B2 (ja) 2013-03-06
US20090308740A1 (en) 2009-12-17
CN101495667B (zh) 2012-09-26

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