WO2008081585A1 - スパッタリングターゲットとその製造方法 - Google Patents
スパッタリングターゲットとその製造方法 Download PDFInfo
- Publication number
- WO2008081585A1 WO2008081585A1 PCT/JP2007/001470 JP2007001470W WO2008081585A1 WO 2008081585 A1 WO2008081585 A1 WO 2008081585A1 JP 2007001470 W JP2007001470 W JP 2007001470W WO 2008081585 A1 WO2008081585 A1 WO 2008081585A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target layer
- sputtering target
- metal particles
- production
- ratio
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C30/00—Coating with metallic material characterised only by the composition of the metallic material, i.e. not characterised by the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Abstract
スパッタリングターゲット1は、基体2上に堆積させた金属粒子4を有するターゲット層3を具備する。ターゲット層3の厚さ方向の断面における金属粒子4の最大径をX、最小径をY、最小径Yに対する最大径Xの比(X/Y)を金属粒子4の扁平率としたとき、ターゲット層3の厚さ方向の断面には扁平率が1.5以上の金属粒子が個数比率で90%以上存在している。ターゲット層3は例えばコールドスプレー法で形成される。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008552023A JP5215192B2 (ja) | 2007-01-05 | 2007-12-26 | スパッタリングターゲット |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007000461 | 2007-01-05 | ||
JP2007-000461 | 2007-01-05 | ||
JP2007257531 | 2007-10-01 | ||
JP2007-257531 | 2007-10-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008081585A1 true WO2008081585A1 (ja) | 2008-07-10 |
Family
ID=39588274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2007/001470 WO2008081585A1 (ja) | 2007-01-05 | 2007-12-26 | スパッタリングターゲットとその製造方法 |
Country Status (3)
Country | Link |
---|---|
JP (2) | JP5215192B2 (ja) |
TW (1) | TW200907087A (ja) |
WO (1) | WO2008081585A1 (ja) |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010090477A (ja) * | 2008-10-06 | 2010-04-22 | Hc Starck Inc | サブミクロン粒度を有するバルク金属構造体の製造法及びかかる方法により製造された構造体 |
EP2353186A2 (en) * | 2008-10-31 | 2011-08-10 | AQT Solar, Inc. | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
JP2012161156A (ja) * | 2011-01-31 | 2012-08-23 | Toshiba Corp | ガス絶縁開閉装置 |
JP2012172265A (ja) * | 2011-02-22 | 2012-09-10 | Heraeus Materials Technology Gmbh & Co Kg | 管状スパッタターゲット |
JP2013004360A (ja) * | 2011-06-17 | 2013-01-07 | Toshiba Corp | ガス絶縁開閉装置用通電部材 |
WO2013054521A1 (ja) * | 2011-10-14 | 2013-04-18 | 株式会社アルバック | ターゲットアセンブリ及びその製造方法 |
US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
JP2015098652A (ja) * | 2007-05-04 | 2015-05-28 | エイチ.シー. スターク インコーポレイテッド | 薄膜堆積の方法 |
US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
KR20150124391A (ko) * | 2014-04-28 | 2015-11-05 | 가부시끼가이샤 아라이도 마테리아루 | 스퍼터링 타깃용 재료 |
WO2016004447A1 (de) | 2014-07-08 | 2016-01-14 | Plansee Se | Target und verfahren zur herstellung eines targets |
WO2016187011A3 (en) * | 2015-05-15 | 2016-12-29 | Materion Corporation | Methods for surface preparation of sputtering target |
CZ306441B6 (cs) * | 2014-12-05 | 2017-01-25 | Safina, A.S. | Způsob výroby kovového tělesa s homogenní, jemnozrnnou strukturou pomocí technologie Cold Spray, kovové těleso takto vyrobené, a způsob opravy použitých kovových odprášených těles |
KR20190086010A (ko) | 2016-12-28 | 2019-07-19 | 가부시키가이샤 코베루코 카겐 | 스퍼터링 타깃용 백킹 플레이트의 보수 방법, 보수 완료 백킹 플레이트 및 보수 완료 백킹 플레이트를 사용한 스퍼터링 타깃 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5979034B2 (ja) * | 2013-02-14 | 2016-08-24 | 三菱マテリアル株式会社 | 保護膜形成用スパッタリングターゲット |
JP7225170B2 (ja) * | 2020-08-05 | 2023-02-20 | 松田産業株式会社 | Ag合金円筒形スパッタリングターゲット、スパッタリング装置及び電子デバイスの製造方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06158303A (ja) * | 1992-11-20 | 1994-06-07 | Mitsubishi Materials Corp | スパッタリング用ターゲット及びその製造方法 |
JPH08246143A (ja) * | 1995-03-08 | 1996-09-24 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体 |
JPH10199830A (ja) * | 1996-11-14 | 1998-07-31 | Hitachi Metals Ltd | Al系スパッタリング用タ−ゲット材およびその製造方法 |
WO2002040733A1 (fr) * | 2000-11-17 | 2002-05-23 | Nikko Materials Company, Limited | Cible de pulverisation produisant peu de particules, plaque support ou appareil de pulverisation, et procede de pulverisation produisant peu de particules |
JP2002339032A (ja) * | 2001-04-11 | 2002-11-27 | Crucible Materials Corp | 二成分合金 |
JP2005002364A (ja) * | 2003-06-09 | 2005-01-06 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲット及びその製造方法 |
JP2006161161A (ja) * | 2004-12-03 | 2006-06-22 | United Technol Corp <Utc> | 真空コールドスプレープロセス |
WO2006067937A1 (ja) * | 2004-12-24 | 2006-06-29 | Nippon Mining & Metals Co., Ltd. | Sb-Te系合金焼結体ターゲット及びその製造方法 |
WO2006117145A2 (en) * | 2005-05-05 | 2006-11-09 | H.C. Starck Gmbh | Coating process for manufacture or reprocessing of sputter targets and x-ray anodes |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6030514A (en) * | 1997-05-02 | 2000-02-29 | Sony Corporation | Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor |
JP3030287B1 (ja) * | 1998-10-09 | 2000-04-10 | 株式会社協同インターナショナル | 成膜装置のクリーニング方法、スパッタリングターゲットのクリーニング方法及びこれらに使用するクリーニング装置 |
JP4851700B2 (ja) * | 2004-09-30 | 2012-01-11 | 株式会社東芝 | 真空成膜装置用部品及び真空成膜装置 |
-
2007
- 2007-12-26 JP JP2008552023A patent/JP5215192B2/ja active Active
- 2007-12-26 WO PCT/JP2007/001470 patent/WO2008081585A1/ja active Application Filing
-
2008
- 2008-01-04 TW TW97100412A patent/TW200907087A/zh unknown
-
2012
- 2012-11-12 JP JP2012248166A patent/JP5571152B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06158303A (ja) * | 1992-11-20 | 1994-06-07 | Mitsubishi Materials Corp | スパッタリング用ターゲット及びその製造方法 |
JPH08246143A (ja) * | 1995-03-08 | 1996-09-24 | Sumitomo Metal Mining Co Ltd | 酸化物焼結体 |
JPH10199830A (ja) * | 1996-11-14 | 1998-07-31 | Hitachi Metals Ltd | Al系スパッタリング用タ−ゲット材およびその製造方法 |
WO2002040733A1 (fr) * | 2000-11-17 | 2002-05-23 | Nikko Materials Company, Limited | Cible de pulverisation produisant peu de particules, plaque support ou appareil de pulverisation, et procede de pulverisation produisant peu de particules |
JP2002339032A (ja) * | 2001-04-11 | 2002-11-27 | Crucible Materials Corp | 二成分合金 |
JP2005002364A (ja) * | 2003-06-09 | 2005-01-06 | Mitsui Mining & Smelting Co Ltd | スパッタリングターゲット及びその製造方法 |
JP2006161161A (ja) * | 2004-12-03 | 2006-06-22 | United Technol Corp <Utc> | 真空コールドスプレープロセス |
WO2006067937A1 (ja) * | 2004-12-24 | 2006-06-29 | Nippon Mining & Metals Co., Ltd. | Sb-Te系合金焼結体ターゲット及びその製造方法 |
WO2006117145A2 (en) * | 2005-05-05 | 2006-11-09 | H.C. Starck Gmbh | Coating process for manufacture or reprocessing of sputter targets and x-ray anodes |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9095932B2 (en) | 2006-12-13 | 2015-08-04 | H.C. Starck Inc. | Methods of joining metallic protective layers |
US9783882B2 (en) | 2007-05-04 | 2017-10-10 | H.C. Starck Inc. | Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom |
JP2015098652A (ja) * | 2007-05-04 | 2015-05-28 | エイチ.シー. スターク インコーポレイテッド | 薄膜堆積の方法 |
US8961867B2 (en) | 2008-09-09 | 2015-02-24 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
JP2010090477A (ja) * | 2008-10-06 | 2010-04-22 | Hc Starck Inc | サブミクロン粒度を有するバルク金属構造体の製造法及びかかる方法により製造された構造体 |
EP2353186A2 (en) * | 2008-10-31 | 2011-08-10 | AQT Solar, Inc. | Chalcogenide alloy sputter targets for photovoltaic applications and methods of manufacturing the same |
EP2353186A4 (en) * | 2008-10-31 | 2014-03-26 | Aqt Solar Inc | SPUTTERTARGETS OF CHALCOGENID ALLOY FOR PHOTOVOLTAIC AND MANUFACTURING PROCESS THEREFOR |
JP2012161156A (ja) * | 2011-01-31 | 2012-08-23 | Toshiba Corp | ガス絶縁開閉装置 |
JP2012172265A (ja) * | 2011-02-22 | 2012-09-10 | Heraeus Materials Technology Gmbh & Co Kg | 管状スパッタターゲット |
US9334564B2 (en) | 2011-02-22 | 2016-05-10 | Heraeus Deutschland GmbH & Co. KG | Tube-shaped sputtering target |
JP2013004360A (ja) * | 2011-06-17 | 2013-01-07 | Toshiba Corp | ガス絶縁開閉装置用通電部材 |
US9120183B2 (en) | 2011-09-29 | 2015-09-01 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets |
US9293306B2 (en) | 2011-09-29 | 2016-03-22 | H.C. Starck, Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
US9108273B2 (en) | 2011-09-29 | 2015-08-18 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets using interlocking joints |
US9412568B2 (en) | 2011-09-29 | 2016-08-09 | H.C. Starck, Inc. | Large-area sputtering targets |
WO2013054521A1 (ja) * | 2011-10-14 | 2013-04-18 | 株式会社アルバック | ターゲットアセンブリ及びその製造方法 |
JPWO2013054521A1 (ja) * | 2011-10-14 | 2015-03-30 | 株式会社アルバック | ターゲットアセンブリ及びその製造方法 |
JP2015221937A (ja) * | 2014-04-28 | 2015-12-10 | 株式会社アライドマテリアル | スパッタリングターゲット用材料 |
KR20150124391A (ko) * | 2014-04-28 | 2015-11-05 | 가부시끼가이샤 아라이도 마테리아루 | 스퍼터링 타깃용 재료 |
KR102198726B1 (ko) | 2014-04-28 | 2021-01-05 | 가부시끼가이샤 아라이도 마테리아루 | 스퍼터링 타깃용 재료 |
WO2016004447A1 (de) | 2014-07-08 | 2016-01-14 | Plansee Se | Target und verfahren zur herstellung eines targets |
US11101116B2 (en) | 2014-07-08 | 2021-08-24 | Plansee Se | Target and process for producing a target |
CZ306441B6 (cs) * | 2014-12-05 | 2017-01-25 | Safina, A.S. | Způsob výroby kovového tělesa s homogenní, jemnozrnnou strukturou pomocí technologie Cold Spray, kovové těleso takto vyrobené, a způsob opravy použitých kovových odprášených těles |
WO2016187011A3 (en) * | 2015-05-15 | 2016-12-29 | Materion Corporation | Methods for surface preparation of sputtering target |
US10604836B2 (en) | 2015-05-15 | 2020-03-31 | Materion Corporation | Methods for surface preparation of sputtering target |
KR20190086010A (ko) | 2016-12-28 | 2019-07-19 | 가부시키가이샤 코베루코 카겐 | 스퍼터링 타깃용 백킹 플레이트의 보수 방법, 보수 완료 백킹 플레이트 및 보수 완료 백킹 플레이트를 사용한 스퍼터링 타깃 |
Also Published As
Publication number | Publication date |
---|---|
TW200907087A (en) | 2009-02-16 |
JP5215192B2 (ja) | 2013-06-19 |
TWI370850B (ja) | 2012-08-21 |
JP5571152B2 (ja) | 2014-08-13 |
JP2013032597A (ja) | 2013-02-14 |
JPWO2008081585A1 (ja) | 2010-04-30 |
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