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  • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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  • C04B35/48—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zirconium or hafnium oxides, zirconates, zircon or hafnates
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  • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/083—Oxides of refractory metals or yttrium
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  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
  • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
  • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
  • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
  • G11B7/2578—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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  • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
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  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
  • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
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  • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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  • C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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  • C04B2235/658—Atmosphere during thermal treatment
  • C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
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• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
  • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
  • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
  • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
  • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
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  • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
  • G11B2007/25708—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 13 elements (B, Al, Ga)
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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  • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
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  • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
  • G11B2007/2571—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing group 14 elements except carbon (Si, Ge, Sn, Pb)
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  • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
  • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
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  • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
  • G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
  • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
  • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
  • G11B2007/25715—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing oxygen

Definitions

• the present invention relates to a sputtering target (hereinafter referred to as target) having high strength for forming a protective film of an optical recording medium capable of recording, reproducing, recording and reproducing, and erasing information by laser light. It is said).
• a protective film constituting an optical recording medium such as an optical disk typically includes silicon dioxide (SiO 2): 20%. It is known that the balance has a composition made of zinc oxide (ZnS), and the protective film having this composition contains silicon dioxide (SiO 2): 20%, and the balance is made of zinc oxide (ZnS). — It is known to be obtained by sputtering using a target for forming an optical recording medium protective layer composed of a SiO-based hot-press sintered body.
• the target made of ZnS_SiO-based hot press sintered body becomes a target made of ZnS-SiO-based hot press sintered body when it is repeatedly rewritten by irradiating the recording film with laser light.
• the S of ZnS constituting the material diffuses into the recording film and the performance of repeated rewriting is lowered. Therefore, the development of a protective film that does not contain S is underway.
• a protective film that does not contain S the following are known in mol%.
• an optical recording medium protective film obtained by sintering a mixed powder having a composition comprising aluminum oxide and inevitable impurities .
• Remainder an optical recording medium protective film obtained by sintering a mixed powder having a composition composed of aluminum oxide and inevitable impurities.
• An optical recording medium obtained by sintering a mixed powder containing hafnium oxide: 10 to 70%, silicon dioxide: 50% or less (not including 0%) and the balance: indium oxide and inevitable impurities.
• Protective film obtained by sintering a mixed powder containing hafnium oxide: 10 to 70%, silicon dioxide: 50% or less (not including 0%) and the balance: indium oxide and inevitable impurities.
• This target is the optical recording medium described in (i) to (ix). It is said that it has the same component composition as the body protective film (see Patent Document 1).
• the target is prepared by preparing the oxide powder described in G) to (ix) as a raw material powder, mixing these raw material powders in a predetermined ratio and mixing them to form a mixed powder, and molding the mixed powder. It is fabricated by firing in the atmosphere or an oxidizing atmosphere such as an oxygen atmosphere.
• Patent Document 1 Japanese Patent Laid-Open No. 2005-56545 Disclosure of the invention
• the oxide powders described in (i) to (k) above are prepared as raw material powders, these raw material powders are mixed in a predetermined ratio and mixed to produce a mixed powder, and this mixed powder is molded After that, a target produced by firing under normal conditions in an oxidizing atmosphere is cracked during high output sputtering, and a protective film for an optical recording medium cannot be efficiently formed.
• An object of the present invention is to provide a high-strength optical recording medium protective film forming target that does not break even when sputtered at a high output.
• the present inventors have studied to produce a target for forming a protective film for a high-strength optical recording medium that does not crack during spattering even with high output sputtering. As a result, the following research results were obtained.
• a target having a structure in which a complex oxide phase having a composition of Si o is formed has a dense structure.
• the strength and strength are further improved, and no cracking occurs during high output sputtering.
• Zinoleum oxide 10-70%, silicon dioxide: 50% or less (not including 0%), the remainder: sintered powder mixed powder having a composition composed of lanthanum oxide and inevitable impurities Sputtering target for forming a medium protective film, hafnium oxide: 10 to 70%, silicon dioxide: 50% or less (excluding 0%), the balance: a mixture having a composition composed of lanthanum oxide and inevitable impurities Formation of protective film for optical recording media by sintering powder Sputtering target for use, or zirconium oxide: 10 to 70%, yttrium oxide: 0.:!
• the target having a structure with a complex oxide phase having a 5 and 5 structure is improved in density and strength, and cracks do not occur during high output sputtering.
• a target having a structure in which a complex oxide phase having a 2 2 7 composition is formed has a further improved density and strength, and cracks do not occur during high output sputtering.
• the density and strength are significantly improved.
• the present invention has been made on the basis of strong research results.
• the sputtering target for forming a protective film for a high-strength optical recording medium according to the first aspect of the present invention is mol%, zirconium oxide: 10 to 70%, silicon dioxide: 50% or less (excluding 0%)
• a mixed powder having a composition comprising aluminum oxide and inevitable impurities is sintered, a composite oxide having a composition of Al Si 2 O in the target substrate.
• a sputtering target for forming a protective film for a high-intensity optical recording medium according to another embodiment of the present invention contains mol%, hafnium oxide: 10 to 70%, silicon dioxide: 50% or less (not including 0%).
• the content of the hafnium oxide 20-50 mole% silicon dioxide content is 10 to 30 mole 0/0.
• the sputtering target for forming a protective film for a high-strength optical recording medium is composed of mol%, zirconium oxide: 10 to 70%, yttrium oxide: 0.:! To 8.4%, diacid.
• a sputtering target for forming an optical recording medium protective film obtained by sintering mixed powder having a compound composition comprising 50% or less (excluding 0%) of the chemical compound: aluminum oxide and inevitable impurities Composite with Al Si O composition in the target substrate
• the oxide content Jinorekoniumu 20-50 mole 0/0, the content of silicon dioxide is 10 to 30 mole 0/0.
• a sputtering target for forming a protective film for a high-intensity optical recording medium according to another embodiment of the present invention contains, in mol%, zirconium oxide: 10 to 70%, silicon dioxide: 50% or less (not including 0%).
• a composite oxide phase having a composition of La 2 SiO is formed in the target substrate.
• the content of zirconium oxide is 20 to 50 mol%, and the content of silicon dioxide is 10 to 30 mol%.
• a sputtering target for forming a protective film for a high-intensity optical recording medium contains mol%, hafnium oxide: 10 to 70%, silicon dioxide: 50% or less (not including 0%).
• a composite oxide phase having a composition of La 2 SiO is formed in the target substrate.
• the sputtering target for forming a protective film for a high-strength optical recording medium is composed of mol%, zirconium oxide: 10 to 70%, yttrium oxide: 0.:! To 8.4%, diacid.
• a sputtering target for forming an optical recording medium protective film obtained by sintering a mixed powder having a compounding composition containing 50% or less (excluding 0%) of silicon carbide and the balance: lanthanum oxide and inevitable impurities.
• the content of oxidizing Jinorekoniumu is 20-50 Monore 0/0
• the content of silicon dioxide is 10 to 30 mole 0/0.
• a sputtering target for forming a protective film for a high-intensity optical recording medium contains, in mol%, zirconium oxide: 10 to 70%, silicon dioxide: 50% or less (not including 0%). And the balance: a composite having a composition of In Si O in the target substrate in a sputtering target for forming an optical recording medium protective film obtained by sintering a mixed powder having a composition composed of indium oxide and inevitable impurities. Has a structure in which an oxide phase is formed
• the content of zirconium oxide from 20 to 50 mole 0/0, containing Yuryou of silicon dioxide is 10 to 30 mole 0/0.
• a sputtering target for forming a protective film for a high-strength optical recording medium contains, in mol%, hafnium oxide: 10 to 70%, silicon dioxide: 50% or less (not including 0%).
• the content of the hafnium oxide 20 to 50 mol%, the content of silicon dioxide is 10 to 30 mole 0/0.
• the sputtering target for forming a protective film for a high-strength optical recording medium comprises, in mol%, zirconium oxide: 10 to 70%, yttrium oxide: 0.:! To 8.4%, diacid Sputtering target for forming an optical recording medium protective film obtained by sintering mixed powder having a composition containing 50% or less (not including 0%) of the chemical compound: indium oxide and inevitable impurities In the target substrate, composite oxidation with In Si O composition
• the oxide content Jinorekoniumu 20-50 Monore 0/0 is 10 to 30 mole 0/0.
• the oxide content Jinorekoniumu 20-50 Monore 0/0 is 10 to 30 mole 0/0.
• the oxide content Jinorekoniumu 20-50 Monore 0/0 is 10 to 30 mole 0/0.
• amorphous silicon dioxide powder is used as a raw material powder, the atmosphere is an oxygen atmosphere, temperature: 1300 ° It is important to calcinate at C or higher, and using crystalline silicon dioxide powder is preferable because the obtained target will be warped and the strength will be reduced.
• the zirconium oxide powder used as the raw material powder may be a stabilized or partially stabilized dinoleum oxide powder. Examples of the stabilized or partially stabilized dinoleconium oxide powder include, for example, Y 2 O: 1 to 12 mol%.
• Zirconium oxide powder containing is known.
• the target for forming a protective film for an optical recording medium of the present invention can be increased in size because of further improvement in strength, and the target is not cracked even when high-power sputtering is performed, so that the target is more efficient.
• An optical recording medium protective film can be formed well.
• One get 1 was made. After the cut surfaces of the target 1 of the present invention and the conventional target 1 are polished, they are observed by X-ray diffraction and EPMA, and have a composition of Al Si O in the substrate.
• the obtained target 1 of the present invention and the conventional target 1 were soldered to a water-cooled backing plate made of oxygen-free copper and then mounted on a DC magnetron sputtering apparatus. It was evacuated to less than 1 X 10- 6 Torr Te. Then, was introduced to the apparatus internal atmosphere of Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the surface of the polycarbonate substrate has a thickness of 50 nm.
• An optical recording medium protective film was formed. At this time, it was observed whether or not the target was cracked, and the results are shown in Table 1.
• the target 1 of the present invention in which the composite oxide phase having
• the obtained target 2 of the present invention and the conventional target 2 were soldered to a water-cooled backing plate made of oxygen-free copper and mounted on a direct current magnetron sputtering apparatus. It was evacuated to less than X 10- 6 ⁇ . Thereafter, the apparatus internal atmosphere by introducing Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the target 2 of the present invention and the conventional target 2 are used in a powerful state, higher than usual with a DC power source, and a sputtering power of 7 kW is applied to have a thickness of 50 nm on the surface of the polycarbonate substrate.
• An optical recording medium protective film was formed. At this time, it was observed whether the target was cracked, and the results are shown in Table 2.
• the target 2 of the present invention in which a complex oxide phase having 6 2 13 is formed, is composed of Al Si 2 O in the substrate.
• the density and strength are higher than those of the conventional target 2 in which the composite oxide phase having 6 2 13 composition is not formed, and further, no cracks are generated during sputtering.
• the present invention target 3 and the conventional target 3 having the composition 2 2 3 2 2 3 were produced. After the cut surfaces of the target 3 of the present invention and the conventional target 3 are polished, whether or not a complex oxide phase having an Al 2 Si 2 O composition is formed in the substrate by X-ray diffraction and EPMA is observed.
• the obtained target 3 of the present invention and the conventional target 3 were soldered to a water-cooled backing plate made of oxygen-free copper, and then mounted on a DC magnetron sputtering apparatus. It was evacuated to less than 1 X 10- 6 ⁇ Te. Then, was introduced to the apparatus internal atmosphere of Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the target 3 of the present invention in which the composite oxide phase having
• the density and strength are higher than those of the conventional target 3 in which a complex oxide phase having 6 2 13 composition is not formed, and cracks do not occur during sputtering.
• the present invention target 4 and the conventional target 4 having a composition containing 20% and the balance: La 2 O were prepared. After the cut surfaces of the target 4 of the present invention and the conventional target 4 are polished, they are observed by X-ray diffraction and EPMA.
• the obtained target 4 of the present invention and the conventional target 4 were soldered to a water-cooled backing plate made of oxygen-free copper and mounted on a DC magnetron sputtering apparatus. It was evacuated to less than 1 X 10- 6 ⁇ Te. Then, was introduced to the apparatus internal atmosphere of Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the present invention target 5 and the conventional target 5 having a composition containing 20% and the balance: La O force were produced. After the cut surfaces of the target 5 of the present invention and the conventional target 5 are polished, a composite oxide having a composition of La SiO in the substrate by X-ray diffraction and EPMA
• the obtained target 5 of the present invention and the conventional target 5 were soldered to a water-cooled backing plate made of oxygen-free copper and mounted on a DC magnetron sputtering apparatus. It was evacuated to less than 1 X 10- 6 ⁇ Te. Then, was introduced to the apparatus internal atmosphere of Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the target 5 of the present invention in which a complex oxide phase is generated has a composition of La SiO in the substrate.
• the density and strength are higher than those of the conventional target 5 in which the composite oxide phase having 2 5 is not formed, and cracks do not occur during sputtering.
• the present invention target 6 and the conventional target 6 having the composition 2 2 3 2 2 3 were produced. After polishing the cut surfaces of the target 6 of the present invention and the conventional target 6, observation was made as to whether or not a composite oxide phase having a composition of La 2 SiO was formed in the substrate by X-ray diffraction and EPMA.
• the obtained target 6 of the present invention and the conventional target 6 were soldered to a water-cooled backing plate made of oxygen-free copper and mounted on a DC magnetron sputtering apparatus. It was evacuated to less than X 10- 6 ⁇ . Thereafter, the apparatus internal atmosphere by introducing Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the target 6 of the present invention in which a complex oxide phase is produced, has a La SiO composition in the substrate.
• the density and strength are higher than those of the conventional target 6 in which the complex oxide phase having 2 5 is not formed, and cracks do not occur during sputtering.
• the present invention target 7 containing 20% and the balance: In O force
• the obtained target 7 of the present invention and the conventional target 7 were soldered to a water-cooled backing plate made of oxygen-free copper and mounted on a DC magnetron sputtering apparatus. It was evacuated to less than 1 X 10- 6 ⁇ Te. Then, was introduced to the apparatus internal atmosphere of Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the target 7 of the present invention and the conventional target 7 are used in a state where power is applied, and a light having a thickness of 50 nm is applied to the polycarbonate substrate surface by applying a higher power than usual with a DC power source and a sputtering power of 9 kW.
• a recording medium protective film was formed. At this time, it was observed whether the target was cracked or not, and the results are shown in Table 7.
• the target 7 of the present invention in which a complex oxide phase is formed, has a composition of In Si O in the substrate.
• the density and strength are higher than those of the conventional target 7 in which a complex oxide phase having 2 2 7 is not formed, and cracks do not occur during sputtering.
• the present invention target 8 and the conventional target 8 having a composition containing 20% and the balance: In O force were produced. After the cut surfaces of the target 8 of the present invention and the conventional target 8 are polished, the composite oxide having the composition of InSiO in the substrate by X-ray diffraction and EPMA
• the obtained target 8 of the present invention and the conventional target 8 were soldered to a water-cooled backing plate made of oxygen-free copper, and then mounted on a DC magnetron sputtering apparatus. It was evacuated to less than 1 X 10- 6 ⁇ Te. Then, was introduced to the apparatus internal atmosphere of Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the surface of the polycarbonate substrate has a thickness of 50 nm.
• An optical recording medium protective film was formed. At this time, it was observed whether or not the target was cracked, and the results are shown in Table 8.
• the substrate has an In Si O composition.
• the target 8 of the present invention in which a complex oxide phase is formed, has a composition of In Si O in the substrate.
• the density and strength are higher than those of the conventional target 8 in which a complex oxide phase having 2 2 7 is not formed, and cracks do not occur during sputtering.
• Y O 3 prepared earlier: Stabilized ZrO powder containing 3 mol%, amorphous SiO powder, crystal
• the present invention target 9 and the conventional target 9 having the composition 2 2 3 were prepared. After the cut surfaces of the target 9 of the present invention and the conventional target 9 were polished, it was observed by X-ray diffraction and EPMA whether or not a complex oxide phase having a composition of InSiO was formed in the substrate.
• the obtained target 9 of the present invention and the conventional target 9 were soldered to a water-cooled backing plate made of oxygen-free copper, and then mounted on a DC magnetron sputtering apparatus. It was evacuated to less than 1 X 10- 6 ⁇ Te. Then, was introduced to the apparatus internal atmosphere of Ar gas 1. 5 X 10- 3 ⁇ the sputtering gas pressure. Further, a polycarbonate substrate having a thickness of 0.6 mm was arranged with a target interval of 70 mm.
• the target 6 of the present invention and the conventional target 6 are used in a state where power is applied, and a light having a thickness of 50 nm is applied to the polycarbonate substrate surface by applying a higher power than usual with a DC power source and a sputtering power of 9 kW.
• a recording medium protective film was formed. At this time, it was observed whether or not the target was cracked, and the results are shown in Table 9.
• the target 9 of the present invention in which a complex oxide phase is formed, has a composition of In Si O in the substrate.
• the density and strength are higher than those of the conventional target 9 in which a complex oxide phase having 2 2 7 is not formed, and cracks do not occur during sputtering.
• the target for forming the protective film for the optical recording medium of the present invention can be increased in size because the strength is further improved, and the target is not cracked even when high-power sputtering is performed.
• the optical recording medium protective film can be formed more efficiently. Therefore, the present invention is extremely useful industrially.

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