Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
  • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
  • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/02041—Cleaning
  • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
  • H01L21/02052—Wet cleaning only
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
  • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67017—Apparatus for fluid treatment
  • H01L21/67063—Apparatus for fluid treatment for etching
  • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
  • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
• • C—CHEMISTRY; METALLURGY
  • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
  • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
  • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
  • C11D2111/10—Objects to be cleaned
  • C11D2111/14—Hard surfaces
  • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
  • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
  • H01L21/30604—Chemical etching

Definitions

• Substrate processing method substrate processing apparatus, and recording medium
• the present invention relates to an apparatus and a method for processing a substrate to be processed by supplying a processing liquid to the substrate to be processed from a processing nozzle disposed above the substrate to be processed.
• the present invention relates to a substrate processing apparatus and a substrate processing method capable of preventing unintended liquid dripping.
• the present invention also provides a method for processing a substrate to be processed by supplying a processing liquid to the substrate to be processed from a processing nozzle disposed above the substrate to be processed.
• the present invention relates to a program recording medium storing a program for executing a substrate processing method capable of preventing dripping.
• an apparatus and a method for processing a substrate to be processed by supplying a processing liquid to the substrate to be processed from a processing nozzle disposed above the substrate to be processed are known.
• the present invention has been made in consideration of the above points, and a processing liquid is supplied to a substrate to be processed from a processing nozzle disposed above the substrate to be processed to process the substrate to be processed.
• An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of preventing unintentional liquid dripping from a processing nozzle.
• the present invention is a method for processing a substrate to be processed by supplying a processing liquid to the substrate to be processed from a processing nozzle disposed above the substrate to be processed. It is an object of the present invention to provide a program recording medium recording a program for executing a substrate processing method capable of preventing dripping.
• a substrate cleaning apparatus includes a processing nozzle that supplies a processing liquid to a substrate to be processed, and an arm that supports the processing nozzle, and the processing nozzle is disposed above the substrate to be processed.
• An arm that is movable between a processing position to be processed, a standby position at which the processing nozzle is disposed outside the substrate to be processed, and the arm when the arm is disposed at the standby position.
• the substrate processing apparatus of the present invention it is possible to remove liquid droplets adhering to the processing nozzle from the processing nozzle by spraying gas onto the processing nozzle using the nozzle. . Therefore, even if, for example, a two-fluid nozzle that easily adheres a droplet of the processing liquid is used as the processing nozzle, it is possible to prevent the occurrence of a watermark due to liquid dripping.
• the substrate cleaning apparatus further includes a receiving member that is positioned below the processing nozzle when the arm is disposed at the standby position, and that receives the droplets that fall from the processing nozzle force. You may do it.
• the processing liquid can be collected in the receiving member.
• the substrate cleaning apparatus may further include a discharge path connected to the receiving member and discharging the droplet received by the receiving member.
• the nozzle force may be provided below the processing nozzle.
• the nozzles may be provided on both sides of the movement path of the processing nozzle when the arm enters the standby position. Good.
• the nozzle may have a blowout port extending along a movement path of the processing nozzle when the arm enters the standby position.
• the substrate cleaning apparatus is configured such that the processing nozzle when the arm enters the standby position passes through the space below the processing nozzle when the arm is disposed at the standby position.
• An enclosure surrounding both sides of the movement path may be provided.
• the path of movement of the processing nozzle when the arm enters the standby position in the space below the processing nozzle when the arm is disposed at the standby position There may be further provided an enclosure enclosing three sides of both sides of the arm and the front of the moving path of the processing nozzle when the arm enters the standby position.
• the nozzle may have a blowout port on the side surface of the body or the body facing the space below the processing nozzle.
• the substrate cleaning apparatus is a nozzle located in the vicinity of the processing nozzle when the arm is disposed at the standby position, and a water blowing nozzle that sprays water on the processing nozzle May be further provided.
• a substrate cleaning method includes a step of disposing a processing nozzle above a substrate to be processed and supplying a processing liquid from the processing nozzle to the substrate to be processed. A step of stopping the supply of the processing liquid, a step of moving the processing nozzle and disposing the processing nozzle outside the processing substrate, and the processing nozzle disposed outside the processing substrate. And a step of spraying a gas to remove the droplets adhering to the processing nozzle from the processing nozzle.
• gas is blown to the processing nozzle to remove droplets adhering to the processing nozzle. Therefore, for example, processing droplets are likely to adhere, and even if a two-fluid nozzle is used as a processing nozzle, it is possible to prevent the occurrence of a watermark due to dripping.
• the step of stopping the supply of the processing liquid from the processing nozzle and the step of disposing the processing nozzle outside the substrate to be processed may be performed first. It may be performed in parallel.
• the droplet removed from the processing nozzle by the receiving member disposed below the nozzle You may make it receive.
• droplets of the processing liquid can be collected in the receiving member.
• the droplets received by the receiving member may be discharged to the outside of the substrate processing apparatus via the discharge path connected to the receiving member.
• a gas may be blown with a downward force to the processing nozzle during the step of removing the droplets from the processing nozzle cover.
• the processing nozzle is disposed when the processing nozzle is disposed outside the substrate to be processed. Let's blow gas from both sides of the moving path.
• the processing nozzle is disposed when the processing nozzle is disposed outside the substrate to be processed. Blow out the gas from the air outlet that extends along the path of movement.
• the processing nozzle is disposed when the processing nozzle is disposed outside the substrate to be processed. Located on both sides of the movement path, outside the substrate to be processed The droplets removed from the processing nozzle may be guided by an enclosure surrounding the space below the processing nozzle. Alternatively, during the step of removing the droplets from the processing nozzle in the substrate cleaning method according to the present invention, the processing nozzle travel path when the processing nozzle is disposed outside the substrate to be processed. Between the both sides of the substrate and the front of the movement path of the processing nozzle when the processing nozzle is disposed outside the processing substrate.
• the droplets removed from the processing nozzle may be guided by an enclosure surrounding the space below the processing nozzle. According to such a substrate processing method, the removed droplets can be collected in the region surrounded by the enclosure. Therefore, it is possible to effectively prevent the removed droplets from being scattered on the substrate to be processed. Further, in these cases, in the step of removing the droplets from the processing nozzle, the droplets are provided on the side surface of the enclosure facing the space below the processing nozzle disposed outside the substrate to be processed. Let's blow out the gas from the outlet.
• the substrate cleaning method according to the present invention is a step that is performed before the step of blowing gas to the processing nozzle, and is applied to the processing nozzle disposed outside the substrate to be processed.
• the method may further comprise a step of spraying water and removing the droplets of the processing liquid adhering to the processing nozzle from the processing nozzle!
• the substrate cleaning method according to the present invention further includes a step of drying the substrate to be processed supplied with the processing liquid, and the step of drying the substrate to be processed includes removing the droplets from the processing nozzle. It may be performed in parallel with the removing step. According to such a substrate processing method, it is possible to efficiently process the substrate to be processed.
• the program according to the present invention is a program executed by a control device that controls the substrate processing apparatus, and the processing nozzle is disposed above the substrate to be processed by being executed by the control device.
• Substrate processing method of substrate It is characterized by having a processing apparatus implement.
• the processing liquid in the step of supplying the processing liquid in the processing method of the substrate to be processed, the processing liquid is mixed with gas by a processing nozzle that is a two-fluid nozzle, and processed.
• the nozzle nozzle may be discharged together with gas.
• a recording medium is a recording medium on which a program executed by a control device that controls a substrate processing apparatus is recorded, and the processing nozzle is used because the program is executed by the control device.
• the step of supplying the processing liquid from the processing nozzle to the substrate to be processed, the step of stopping the supply of the processing liquid from the processing nozzle, and the processing nozzle A step of disposing the substrate outside the substrate to be processed; a gas is blown to the processing nozzle disposed outside the substrate to be processed; and the droplets adhering to the nozzle for processing are removed from the nozzle for processing.
• a step of causing the substrate processing apparatus to carry out the processing method of the substrate to be processed.
• the processing liquid in the step of supplying the processing liquid of the processing method of the substrate to be processed, the processing liquid is mixed with gas by a processing nozzle which is a two-fluid nozzle.
• the gas may be discharged together with the gas from the processing nozzle cover.
• FIG. 1 is a cross-sectional view showing an embodiment of a substrate processing apparatus according to the present invention.
• FIG. 2 is a diagram showing the substrate processing apparatus in a cross section taken along line II-II in FIG.
• FIG. 3 is a diagram corresponding to FIG. 2 and showing the substrate processing apparatus in a state different from the substrate processing apparatus shown in FIG. 2.
• FIG. 4 is a diagram showing a piping system of the substrate processing apparatus.
• FIG. 5 is a top view showing a portion of a droplet removal nozzle of the substrate processing apparatus.
• FIG. 6 is a sectional view taken along line VI-VI in FIG.
• FIG. 7 is a cross-sectional view taken along line VII-VII in FIG.
• FIG. 8 is a diagram showing an example of a wafer processing system in which a substrate processing apparatus is incorporated.
• Fig. 9 is a view showing a modified example of the droplet removing nozzle and also having the same visual field power as in Fig. 6.
• FIG. 10 is a diagram showing a visual field power similar to that in FIG. 6 as a modified example of the enclosure.
• FIG. 11 is a view showing a visual field power similar to that of FIG. 6 in a modified example in which a pure water blowing nozzle is provided.
• the substrate processing apparatus according to the present invention is used as a cleaning unit for cleaning a semiconductor wafer (an example of a substrate to be processed) having a substantially disk-shaped outline.
• a semiconductor wafer an example of a substrate to be processed
• An example incorporated in a wafer processing system is shown.
• the substrate processing apparatus according to the present invention is not limited to application as a wafer cleaning unit.
• FIG. 8 shows an example of a wafer processing system in which a substrate processing apparatus is incorporated.
• the wafer processing system 10 includes a mounting unit 10a on which a wafer W before and after processing is mounted, a cleaning unit 10c for cleaning the wafer W, a mounting unit 10a, And a transfer unit 10b for transferring the wafer W between the cleaning units 10c.
• the wafer processing system 10 has a mounting table 12 in the mounting unit 10a.
• the carrier C that accommodates the wafer W to be processed is detachably attached.
• a plurality of, for example, 25 processed wafers W are spaced apart from each other so that the surface (processing surface on which a semiconductor device is formed) is the upper surface. Now, hold in a generally horizontal position!
• the transfer unit 10b is provided with a wafer transfer device 14 for transferring the wafer W.
• the wafer transfer device 14 is movable in the X direction and the Y direction, and can access the carrier C and the transfer unit 16 serving as a transfer port for the cleaning unit 1 Oc.
• the cleaning unit 10c includes the transfer unit 16 described above, the substrate processing apparatus 20 in the present embodiment, and the main wafer transfer apparatus 18 that transfers the wafer W between the transfer unit 16 and the substrate processing apparatus 20.
• a total of eight substrate processing apparatuses (wafer cleaning units) 20a to 20h are disposed in the X direction and the cleaning section 10c. They are arranged in four vertical positions, separated from each other in four locations spaced apart in the vertical direction.
• the main wafer transfer device 18 is movable in the X and ⁇ directions, is rotatable in the X X plane ( ⁇ direction), and is movable in the ⁇ direction. As a result, each substrate processing apparatus 20a to 20h and the delivery unit 16 can be accessed.
• Each of the above devices is connected to a control device 5 (see FIG. 8) including a computer.
• Each device or the like is operated based on a control signal from the control device 5 according to a program recorded in the recording medium 6, for example.
• the wafer transfer device 14 transfers the wafer W to be processed in the carrier C to the delivery unit 16.
• the wafer W to be processed in the delivery unit 16 is transferred by the main wafer transfer device 18 into one of the non-operating substrate processing devices 20 and cleaned in the substrate processing device 20.
• the cleaned wafer W is transferred into the carrier C by the main wafer transfer device 18 and the wafer transfer device 14 through the delivery unit 16.
• FIG. 1 is a sectional view showing the substrate cleaning apparatus
• FIG. 2 is a view showing the substrate processing apparatus in a section taken along line II-II in FIG. 1
• FIG. 3 is a view corresponding to FIG.
• FIG. 4 is a view showing a substrate processing apparatus in a state different from the substrate processing apparatus shown in FIG. 2
• FIG. 4 is a view showing a piping system of the substrate processing apparatus
• FIG. 5 is a partially enlarged view of FIG.
• FIG. 6 is a top view showing a portion of a droplet removal nozzle of a substrate processing apparatus
• FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 5
• FIG. 7 is a cross-sectional view taken along line VII-VII in FIG. It is.
• each substrate processing apparatus 20 is provided with a partition wall (unit chamber) 22 for partitioning each apparatus from other apparatuses, and each partition wall 22 is opened and closed with an opening 23a and an opening 23a.
• a partition wall mechanical shutter 23b is provided.
• Each board The processing device 20 is configured substantially the same except that it is configured symmetrically. In FIG. 2 and FIG. 3, the partition wall 22 is omitted.
• the substrate processing apparatus 20 includes a processing container 25 having a sealed structure for storing the processing target wafer W, and the processing container 25 stores the processing target wafer W.
• the processing room 25a is divided into an arm storage room 25b provided adjacent to the processing room 25a.
• an arm opening 26a for communicating between the processing chamber 25a and the arm storage chamber 25b, and this arm opening 26a.
• a shutter 26b for opening and closing.
• the processing container 25 includes a processing container opening 27a for communicating the processing chamber 25a with the outside of the processing container, a mechanical shutter 27b for opening and closing the processing container opening 27a, Is provided.
• the processing container opening 27a of the processing container 25 is formed at a position facing the opening 23a of the partition wall 22.
• the substrate processing apparatus 20 includes a rotation holding table 30 in the processing chamber 25a for holding the wafer W in a substantially horizontal posture and rotating the held wafer W.
• the rotation holding base 30 provided in the processing chamber 25a includes a cylindrical rotating cylinder 31, a chuck body 32 provided above the rotating cylinder 31, and a chuck.
• a holding member 33 supported by the main body 32 and a hollow motor 34 for supporting the rotating cylinder 31 are provided.
• the hollow motor 34 is configured to rotationally drive the rotary cylinder 31.
• three holding members 33 are provided at substantially equal intervals on the circumference of the upper portion of the chuck body 32 and centering on the rotation axis L 1 of the rotary cylinder 31.
• the holding member 33 can hold the wafer W from the periphery.
• the outer side of the wafer W held by the rotary holding base 30 along the horizontal direction.
• a protrusion 38 is formed at the position.
• the protrusion 38 has a substantially triangular shape in cross section, and has a direction-inclined surface 38 a on the wafer W held on the rotation holding table 30 from the upper side.
• the shutter projection 28 having the substantially same cross-sectional shape as the projection 38 and including the inclined surface 28a is also formed on the mechanical shutter 27b of the processing container 25. As shown in Fig. 2 and Fig.
• the projection 38 and the shutter projection 28 are arranged at substantially the same height, and the inclined surface 38a of the projection 38 and the shutter projection 28
• the inclined surface 28a forms a circumferential inclined surface that is substantially continuous along the inner contour of the processing container 25.
• an inner cup 40 that also has a cylindrical force is provided outside the rotation holding table 30 in the processing container 25.
• the inner cup 40 includes a cylindrical portion 40a that also has a substantially cylindrical force, and an inclined portion 40b that is bent inwardly and extends from the cylindrical portion 40a.
• the inner cup 40 is connected to an inner cup drive mechanism (not shown) and can be moved in the vertical direction by the inner cup drive mechanism.
• the constituent elements such as the protrusion 38, the shutter protrusion 28, and the inner cup 40 are omitted for easy understanding of the overall configuration of the substrate processing apparatus 20.
• the bottom surface of the processing vessel 25 is provided with a first discharge port 42 on the inner side of the inner cup 40, and similarly, the second outlet on the outer side of the inner cup 40.
• An outlet 43 is provided.
• a plurality of vent holes 45 are formed on the upper surface of the processing container 25.
• a gas is supplied into the processing chamber 25a of the processing container 25 from the vent hole 45.
• the supplied gas flows downward in the processing chamber 25a and is discharged out of the processing chamber 25a through the first discharge port 42 or the second discharge port 43. Therefore, a downflow is formed in the processing chamber 25a by the gas flowing in through the vent hole 45.
• air that has passed through a filter or an inert gas such as nitrogen can be selected, and preferably dry nitrogen can be selected.
• a hollow motor 34 of the rotation holding base 30 is arranged inside the inner cup 40.
• An inner partition wall 36 surrounding the hollow motor 34 is provided inside the inner cup 40.
• the internal partition wall 36 has a substantially cylindrical shape with a closed end face, and prevents dust or the like generated from the hollow motor from diffusing into the processing chamber 25a.
• the substrate processing apparatus 20 has a plurality of processing nozzles 50 a, 50 b, 50 c, 50 d that discharge liquid or gas toward the wafer W to be processed and a plurality of processing nozzles 50 to clean the wafer W.
• the processing nozzles 50a to 50d are disposed above the wafer W (the position indicated by the two-dot chain line in FIG. 1), and the processing nozzles 50a to 50d are disposed above the wafer W in the horizontal direction. It is possible to move between the standby position (position indicated by the solid line in Fig. 2) and As shown in FIG. 1, when the arm 54 is in the processing position, the processing nozzles 50a to 50d supported by the arm 54 are disposed above the approximate center of the surface of the wafer W supported by the rotary support 30.
• the substrate processing apparatus 20 includes droplet removing nozzles 60 and 62 arranged in the vicinity of the processing nozzle 50a when the arm 54 is in the standby position.
• droplet removal nozzles 60 and 62 for blowing gas to the processing nozzles 50a to 50d are further provided.
• the arm 54 is swingably connected to the shaft 54a at the end opposite to the end where the head 52 is provided. ing.
• the arm 54 is driven by an arm drive mechanism (not shown) and swings about a swing shaft L2 that is the center of the shaft 54a.
• the arm storage chamber is opened via the arm opening 26a opened by the side force provided with the head 52 of the arm 54. 25b Force It gets into the processing chamber 25a!
• the first to fourth processing nozzles 50a to 50d are provided at the tip of the arm 54.
• the first processing nozzle 50a is configured by a two-fluid nozzle that can mix gas and liquid and discharge fine droplets together with gas at high pressure.
• the other processing nozzles may be composed of a single fluid nozzle that discharges a gas or a liquid alone.
• the first processing nozzle 50a is connected to a gas source 58a for supplying nitrogen via a first pipe 56a and is supplied with pure water (DIW: deionized water). It is connected to the water source 58b via the second pipe 56b.
• the third treatment nozzle 50c is a pure water source.
• a chemical liquid source 58c for supplying a chemical liquid through a fourth pipe 56d.
• the fourth processing nozzle 50d is connected to the gas source 58a via the fifth pipe 56e.
• the second processing nozzle 50b is also connected to a gas supply source or a liquid supply source of V, which is different from that of this embodiment! Thus, it can be connected to a gas source 58a, a pure water source 58b, a chemical solution source 58c, and the like.
• first to fifth pipes 56a to 56e are provided with first to fifth valves 57a, 57b, 57c, 57d, and 57e, respectively.
• the first to fifth pipes 56a to 56e are opened and closed by the corresponding first to fifth valves 57a to 57e.
• the arm drive mechanism (not shown) and the first to fifth valves 57a to 57e are connected to the piping system controller 7 and controlled by the piping system controller 7.
• the piping system controller 7 is a part of the control device 5 described above.
• the gas supplied from the gas source 58a may be a gas other than nitrogen.
• the chemical solution supplied from the chemical solution source 56c is not particularly limited. In any case, it may be determined as appropriate in consideration of the content of processing performed using the substrate processing apparatus 20 and the degree of required processing.
• other configurations of the piping system including the number of processing nozzles 50a to 50d are also considered in consideration of the content of processing performed using the substrate processing apparatus 20 and the required processing level. What is necessary is just to determine suitably.
• the gas source 58a and the pure water source 58b are used in combination with different processing nozzles.
• each processing nozzle may discharge different types of gas or liquid.
• the substrate processing apparatus 20 is one of the movement paths A (FIG. 5) of the processing nozzle (typically the first processing nozzle 50a) when the arm 54 enters the standby position. Movement of the first droplet removal nozzle 60 and the processing nozzle (typically, the first processing nozzle 50a) provided on the side (on the right side of the movement path A in FIG. 5). The other side of route A And a second droplet removal nozzle 62 provided on the left side (the left side of the movement path A in FIG. 5).
• the first droplet removing nozzle 60 and the second droplet removing nozzle 62 as described above are a first U-shaped first plate having a substantially U-shape in plan view (Fig. 5).
• the block member 71 and a second block member 81 having two plate-like forces 82a and 82b and having a substantially plate-like force are formed.
• the first block member 71 and the second block member 81 have substantially the same outer contour.
• the first block member 71 is overlapped and fixed on the second block member 81 such that the outer contour thereof is approximately aligned with the outer contour of the second block member 81.
• the second block member 81 is disposed on the lower surface 25d (see FIGS. 2 and 3) of the processing container 25 in the arm storage chamber 25b. As shown in FIG. 7, two through holes 25e and 25f are also formed in the lower surface 25d of the processing container 25. As shown in FIGS. 5 to 7, the second block member 81 is configured such that each of the two through holes 82a and 82b of the second block member 81 overlaps the different through holes 25e and 25f of the processing vessel lower surface 25d. It is fixed on the lower surface 25d of the processing container.
• the arrangement positions of the first block material 71 and the second block material 81 on the lower surface 25d of the processing vessel 25 are such that the first block material 71 is provided by the arm 54 as shown in FIG. Waiting from the three sides of both sides across the processing path A of the processing nozzle when entering the standby position, and the front of the processing path A of the processing nozzle when the arm 54 enters the standby position.
• the first to fourth processing nozzles 50a to 50d supported by the arm 54 at the position are positioned so as to surround the lower space.
• a groove 83 having a substantially U-shape in plan view is formed on the surface of the second block member 81.
• the groove 83 is formed at a position that is covered by the first block member 71 superimposed on the second block member 81 (FIG. 5).
• one side long hole 72 extending along the movement path A is formed in a portion of the first block material 71 located on one side with respect to the movement path A of the processing nozzle.
• another side long hole 73 extending along the movement path A is formed in a portion of the first block material 71 located on the other side with respect to the movement path A of the processing nozzle.
• the movement path A is a concept including “approximately parallel” which is not necessarily strictly parallel to the movement path A.
• the movement path A of the processing nozzle is the movement of the arm 54.
• Each of the long holes 72 and 73 is formed in a straight line, whereas it has an arc shape corresponding to the work.
• each opening 72a, 73a of each of the long holes 72, 73 faces the groove 83 of the second block member 81. Further, as shown in FIG. 6, each of the long holes 72, 73 extends straight from one opening 72a, 73a to the other opening 72b, 73b, and the arm 54 is in the standby position on the straight line extension. When the nozzles 50a to 50d are disposed, the processing nozzles 50a to 50d are positioned.
• the groove 83 of the second block member 81 is connected to the gas source 58a via the sixth pipe 56f. Similar to the first to fifth pipes 56a to 56e, the sixth pipe 56f is provided with a sixth valve 57f connected to the pipe system controller 7. The sixth valve 57f is controlled by the piping system controller 7 to open and close the sixth pipe 56f. That is, the compressed gas can be sent into the groove 83 of the second block material 81, and when the gas is supplied into the groove 83, the first long hole 72 and the second long hole 73 of the first block material 71 are supplied. The gas is blown out toward the processing nozzles 50a to 50d.
• the sixth pipe 56f may be connected to a separate independent gas source different from the gas source 58a. Further, the gas supplied into the groove 83 via the sixth pipe 56f is not limited to nitrogen.
• the first block material 71 and the second block material 81 constitute the first and second droplet removal nozzles 60 and 62 disposed below the processing nozzles 50a to 50d.
• the outlet 60a of the first droplet removing nozzle 60 is constituted by the other opening 72b of the first elongated hole 72 of the first block material 71, and the second droplet 72
• the outlet 62 a of the removal nozzle 62 is configured by the other opening 73 b of the second long hole 73 of the first block material 71.
• the outlets 60a and 62a of the respective droplet removing nozzles 60 and 62 extend along the movement path A of the processing nozzle.
• first and second receiving members 77 and 78 are arranged below the two through holes 82a and 82b of the second block member 81, respectively. .
• the first receiving member 77 is disposed below the first processing nozzle 50a, and is mainly disposed on the first processing nozzle 50a. The adhered droplet is collected.
• the second receiving member 78 is disposed below the second to fourth processing nozzles 50b to 50d, and mainly collects droplets attached to the second to fourth processing nozzles 50b to 50d.
• the first receiving member 77 is connected to the first droplet discharge path 77a, and the droplet received by the first receiving member 77 is the first droplet. It is collected in the first collection container 79a through the one droplet discharge path 77a.
• the second receiving member 78 is connected to the second droplet discharge path 78a, and the droplets received by the second receiving member 78 pass through the second droplet discharge path 78a to the second recovery container. 79b will be recovered.
• the first block member 71 has a U-shape when viewed in plan. Further, as shown in FIGS. 6 and 7, in the present embodiment, the upper surface of the first block member 71 is arranged in the vicinity of the lower ends of the first to fourth processing nozzles 50a to 50d. In other words, the first block member 71 is disposed in the space below the first to fourth processing nozzles 50a to 50d when the arm 54 is in the standby position, on both sides of the processing nozzle moving path A, It surrounds the front of the nozzle movement path A and from three sides.
• the first block member 71 includes a side portion 64a surrounding the space below the first to fourth processing nozzles 50a to 50d from one side of the processing nozzle movement path A, and As the enclosure 64 having the other side part 64b surrounding from the other side of the processing nozzle movement path A and the front part 64c surrounding from the front of the processing nozzle movement path A, the first through It functions to guide the processing liquid removed from the fourth processing nozzles 50a to 50d and the head 52 to the receiving members 77 and 78. As shown in FIG. 6 and FIG. 7, in the present embodiment, the first and second droplet removal nozzles 60, 62 are one side portion facing the space below the processing nozzles 50a to 50d. Air outlets 60a and 62a are respectively provided on the side surfaces of 64a and the other side portion 64b.
• the partition mechanical shutter 23b and the mechanical shutter 27b are opened, and the wafer W held in the main wafer transfer device 18 is brought into the processing chamber 25a.
• the wafer W is held in a substantially horizontal posture with its surface facing upward. place
• the wafers W and W brought into the barber 25a are placed on the chuck main body 32 of the rotary holding table 30 and held from the edge by the holding member 33.
• the partition mechanical shutter 23b and the mechanical shutter 27b are raised, and the opening 23a and the processing container opening 27a are closed.
• the wafer W is stored and held in a substantially horizontal posture in the sealed processing container 25 in the sealed partition wall 22 so that the surface to be processed faces upward.
• the inner cup 40 also moves to the raised position (the position indicated by the two-dot chain line in FIG. 3) after or while the partition mechanical shutter 42b and mechanical shutter 27b are raised.
• nitrogen is supplied into the processing chamber 25a from a plurality of vent holes 45 provided on the upper surface of the processing container 25.
• the nitrogen supplied to the processing chamber 25a forms a substantially uniform down flow in the processing chamber 25a.
• the shutter 26b is opened, and the arm 54 is driven to swing by an arm driving mechanism (not shown) that receives a control signal from the piping system controller 7.
• the arm 54 is disposed so far and moves to the standby position (the position of the solid line in FIG. 1) and the processing position (the position of the two-dot chain line in FIG. 1).
• the first to fourth processing nozzles 50a to 50d supported at the end of the arm 54 enter the processing chamber 25a from the arm storage chamber 25b and are arranged above the approximate center of the wafer W to be processed. (See Figure 3).
• the hollow motor 34 rotates the rotary cylinder 31. As a result, the wafer W is rotated.
• the cleaning process for Ueno and W is performed in four steps: a chemical cleaning process, a rinsing process, a pure water cleaning process, and a drying process.
• a rectified down flow continues to be formed in the processing chamber 25a.
• the first to fourth processing nozzles 50a to 50d and the head 52 that supports these processing nozzles 50a to 50d are provided with liquid.
• Drop removal processing is performed in the arm storage chamber 25b.
• a chemical cleaning process is performed as a first step.
• the piping system controller 7 opens the fourth valve 57d.
• the chemical solution for example, NH / HO mixed solution
• the supplied chemical solution flows from the center of the surface of the wafer W to the peripheral side by the rotation of the wafer W (more specifically, the centrifugal force caused by the rotation of the wafer W). Then, the entire surface of the wafer W is cleaned with a chemical solution.
• the supplied chemical solution is scattered outward from the wafers W by the rotation of the wafer W.
• the scattered chemical liquid is stored in the inclined portion 40a of the inner cup 40 at the raised position, and is discharged from the first discharge port 42 provided below the processing container 25 and inside the inner cup 40.
• the chemical solution recovered from the discharge port 42 may be re-stored in the chemical solution source 58c after appropriate processing.
• This step is started in a state where the arm 54 is disposed at the processing position and the processing nozzles 50a to 50d are disposed substantially above the center of the surface of the wafer W. Further, the wafer W remains rotated as in the first step. On the other hand, the inner cup 40 descends at the start of the second step.
• the piping system controller 7 opens the third valve 57c.
• pure water DIW
• DIW pure water
• the chemical solution on the wafer W is replaced with pure water. This state continues for a certain period.
• the chemical liquid supplied in the chemical liquid cleaning process and remaining in the third processing nozzle 50c is also discharged by the pure water.
• This step is started in a state where the arm 54 is disposed at the processing position and the processing nozzles 50a to 50d are disposed substantially above the center of the surface of the wafer W. Also, the wafer W remains rotated as in the first step.
• the piping system controller 7 opens the first valve 57a and the second valve 57b, nitrogen is supplied from the gas source 58a to the first processing nozzle 50a, and processing is performed from the pure water source 58b. Pure water as a chemical liquid is supplied to the first processing nozzle 50a.
• the scientific nozzle 50a mixes pure water and nitrogen as the treatment liquid, and sprays fine droplets of pure water onto the wafers and W together with high-pressure nitrogen as the carrier gas. As a result, particles and the like can be removed from Ueno and W with high removal efficiency.
• the arm 54 is driven by the arm driving mechanism. Therefore, the first processing nozzle 50a discharges the mixture of nitrogen and pure water toward the surface of the wafer W from above the center of the surface of the wafer W to above the peripheral edge of the surface of the wafer W. And move horizontally. As a result, a high-level cleaning process using a mixture of nitrogen and pure water is performed up to the peripheral edge side of the center side force of the wafer W!
• the wafer W held on the rotation holding table 30 is maintained in a state of being rotated for a certain period.
• pure water remaining on the surface of the wafer W is scattered outward from the surface of the wafer W, and the wafer and W are dried.
• the inner cup 40 remains lowered. Therefore, pure water scattered from the wafer W is discharged from the second discharge port 43.
• the process directly performed on the wafer W having a four-step step force is completed.
• the rotation of the rotating cylinder 31 is stopped, and the wafer W is held on the rotation holding table 30 in a stationary state. Thereafter, the bulkhead mechanical shutter 23b and the mechanical shutter 27b are opened, and the processed wafer W is unloaded by the main wafer transfer device 18.
• the first to fourth processing nozzles 50a to 50d and these processes are performed in parallel with the drying process for Ueno and W.
• a droplet removing process is performed in the arm storage chamber 25b for the head 52 that supports the nozzles 50a to 50d.
• the droplet removal process will be described in detail.
• the arm 54 moves to the standby position as it is. That is, the first to fourth processing nozzles 50a to 50d supported at the tip of the arm 54 via the head 52 are further moved horizontally to the outside of the wafer W as they are, and are used for the first to fourth processing nozzles.
• the entire arm 54 together with the nozzles 50a to 50d and the head 52 moves from the processing chamber 25a to the arm storage chamber 25b.
• the arm opening 27a is sealed by the shutter 27b (see FIG. 2).
• the piping system controller 7 opens the sixth valve 57f (see Fig. 4), and nitrogen is fed into the groove 83 of the second block material 81 from the gas source 58a.
• nitrogen is discharged from the first droplet removal nozzle 60 and the second droplet removal nozzle 62 toward the first to fourth processing nozzles 50a to 50d and the head 52 that supports these nozzles 50a to 50d.
• droplets adhering to the first to fourth processing nozzles 50a to 50d and the head 52 for example, discharged from the first nozzle 50a during the pure water cleaning process (AS process) described above, the head 52 and the wafer W are discharged.
• the pure water droplets adhering to the first to fourth processing nozzles 50a to 50d and the head 52 are removed from the first to fourth processing nozzles 50a to 50d and the head 52. Can be removed.
• the first droplet removal nozzle 60 and the second droplet removal nozzle 62 are the first to the first to fourth when the arm 54 is in the standby position.
• the fourth processing nozzles 50a to 50d are disposed on both sides. Therefore, the liquid droplets removed from the first to fourth processing nozzles 50a to 50d and the head 52 correspond to the blowing direction from the first liquid droplet removal nozzle 60 and the second liquid droplet removal nozzle 62. It tends to be blown away downward.
• a first receiving member 77 is provided below the first processing nozzle 50a when the arm 54 is in the standby position, and when the arm 54 is in the standby position.
• a second receiving member 78 is provided below the second to fourth processing nozzles 50b to 50d. The For this reason, the liquid droplets dropped from the first processing nozzle 50a are generally collected by the first receiving member 77, and the liquid drops dropped from the second processing nozzles 50b to 50d are generally the second receiving member 78. Collected.
• the liquid recovered by the first receiving member 77 is sent to the first recovery container 79a through the first droplet discharge path 77a.
• the liquid recovered in the second receiving member 78 is sent to the second recovery container 79b via the second liquid droplet discharge path 78a.
• a second block member 81 is provided below the head 52 when the arm 54 is in the standby position. For this reason, the liquid droplets dropped from the head 52 are generally collected on the second block member 81. That is, since the liquid droplets removed from the first to fourth processing nozzles 50a to 50d and the head 52 are blown off to a substantially constant place, the processing liquid is blown off to an unexpected place of the substrate processing apparatus 20, and the substrate It is possible to prevent the processing device 20 from being deteriorated.
• the first block member 71 surrounds the space below the first to fourth processing nozzles 50a to 50d and the head 52 from three directions when the arm 54 is in the standby position. Functions as enclosure 64. Therefore, it is possible to effectively prevent the droplets attached to the first to fourth processing nozzles 50a to 50d and the head 52 from being blown out of the second block member 71. Thereby, it is possible to more effectively prevent the substrate processing apparatus 20 from being deteriorated due to unexpected dispersion of the processing liquid.
• the nozzles 50a to 50d and the processing nozzles 50a to 50d and the processing nozzles are sprayed by blowing the gas toward the processing nozzles 50a to 50d using the droplet removal nozzles 60 and 62. Droplets adhering to the periphery of the nozzles 50a to 50d can be removed from the processing nozzles 50a to 50d and the periphery of the processing nozzles 50a to 50d.
• the processing nozzles 50a to 50d are arranged outside the wafer W, so that the removed droplets can be prevented from falling onto the wafer. it can. Thereby, it is possible to prevent the occurrence of a watermark due to dripping.
• the droplet removal nozzles 60, 62 are provided on both sides of the processing nozzle movement path A when the arm 54 enters the standby position. . Therefore, the droplets adhering to the processing nozzles 50a to 50d and their surroundings can be blown downward. Further, while the processing nozzles 50a to 50d are moving as the arm 54 swings, the processing nozzles 50a to 50d are close to the processing nozzles 50a to 50d while preventing them from coming into contact with the droplet removal nozzles 60 and 62. Thus, the droplet removing nozzles 60 and 62 can be arranged. In other words, the liquid droplets can be more reliably removed while preventing the generation of unnecessary particles by preventing contact of the movable member.
• the path below the processing nozzles 50a to 50d when the arm 54 is in the standby position moves the path of movement of the processing nozzle when the arm 54 enters the standby position.
• An enclosure 64 is provided that surrounds from both sides of the A side and the front side. Therefore, the removed droplet can be collected in the region surrounded by the enclosure 64. For this reason, it is possible to effectively prevent the droplets to be removed from scattering to an unintended place in the substrate processing apparatus 20. As a result, the lifetime of the substrate processing apparatus 20 can be effectively extended, and the maintenance cost and maintenance work of the substrate processing apparatus 20 can be significantly reduced.
• the arm 54 swings around the peristaltic axis L2.
• the force shown in the example moves between the standby position and the processing position, whereby the first to fourth processing nozzles 50a to 50d supported by the head 52 via the head 52 move.
• the arm 54 may be movable in one direction on a plane parallel to the plate surface of the wafer W supported by the rotary holding table 30 and in another direction inclined or orthogonal to the one direction. ,.
• the example in which the first to fourth processing nozzles 50a to 50d are supported by the arm 54 has been described.
• the configuration of the processing nozzle supported by the arm 54 can be changed as appropriate.
• the number of processing nozzles supported by the arm 54 may be an arbitrary number of 1 or more.
• the type of fluid discharged from each processing nozzle for example, gas, liquid, two fluids of gas and liquid, or the like may be appropriately changed.
• the force shown in the example in which the two-fluid nozzle is used as the processing nozzle and the processing liquid is discharged in the form of fine droplets is not limited thereto.
• a single fluid spray nozzle may be used as any one of the processing nozzles 50a to 50d, and the processing liquid may be discharged from the processing nozzle.
• the force shown in the example in which the droplet removing nozzles 60 and 62 are formed from the first block material 71 and the second block material 81 is not limited thereto.
• a known nozzle can be used as the droplet removal nozzle.
• the example in which the liquid droplet removal nozzles 60, 62 have the elongated outlets 60a, 62a is shown.
• the present invention is not limited to this, and a known outlet configuration may be applied. it can.
• the droplet removing nozzles 60 and 62 force are located on both sides of the movement path A of the processing nozzles 50a to 50d when the arm enters the standby position.
• the force shown in the example disposed below the processing nozzles 50a to 50d is not limited to this, and can be appropriately changed.
• a droplet removing nozzle 66 may be arranged below the processing nozzles 50a to 5Od in the vertical direction, and gas may be blown to the processing nozzles 50a to 50d from below in the vertical direction.
• FIG. 9 a droplet removing nozzle 66 may be arranged below the processing nozzles 50a to 5Od in the vertical direction, and gas may be blown to the processing nozzles 50a to 50d from below in the vertical direction.
• FIG. 9 is a view showing a modified example of the droplet removing nozzle and also having the same visual field power as in FIG.
• the same parts as those in the above-described embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals, and the detailed description thereof is omitted.
• the space below the processing nozzles 50a to 50d when the enclosure 64 force arm 54 is disposed at the standby position is surrounded from three sides and removed from the processing nozzles 50a to 50d.
• An example of the force that guides a given droplet is not limited to this.
• the enclosure 64 force arm 54 when the enclosure 64 force arm 54 is arranged at the standby position, it consists of only one side part 64a and the other side part 64b located on both sides of the processing nozzles 50a to 50d, that is, the front part.
• the image may be taken in only from both sides below the processing nozzles 50a to 50d.
• FIG. 10 is a diagram showing a visual field power similar to that of FIG. 6 as a modification of the enclosure. According to such a modified example, the liquid droplets removed from the processing nozzles 50a to 50d can be reliably collected by the area surrounded by the body 69. For this reason, it is possible to more effectively prevent the droplets to be removed from scattering to an unintended location in the substrate processing apparatus 20.
• the processing nozzles 50a to 50d can be prevented from coming into contact with the one side part 64a and the other side part 64b, and the one side part 64a and the other side part 64b. Can be arranged close to the processing nozzles 50a to 50d. That is, it is possible to more reliably remove liquid droplets while preventing contact of the movable member and preventing generation of unnecessary particles.
• FIG. 10 shows an example in which the processing nozzles 50a to 50d are partially surrounded by the first block material 71 by increasing the thickness of the first block material 71.
• the configuration of the enclosure 64 in this modification is not limited to the illustrated configuration.
• Figure 10 The same parts as those in the above-described embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals, and detailed description thereof is omitted.
• FIG. 11 is a diagram showing a visual field power similar to that of FIG. 6 as a modified example provided with a pure water blowing nozzle.
• FIG. 11 the same parts as those of the above-described embodiment shown in FIGS. 1 to 8 are denoted by the same reference numerals, and the detailed description thereof is omitted.
• pure water blowing nozzles 90 and 92 having the same configuration as the droplet removing nozzles 60 and 62 are provided in the vicinity of the droplet removing nozzles 60 and 62 described above. Yes. That is, the pure water blowing nozzles 90 and 92 are respectively provided on both sides of the processing nozzle movement path A when the arm 54 enters the standby position, and along the processing nozzle movement path A.
• the air outlets 90a and 92a extend in the direction.
• the second block member 81 is formed with a second groove 84 that communicates with the pure water supply source.
• the first block member 71 has one end 74a, 75a facing the groove 84 of the second block member 81, and the other end 74b, 75b being a second one-side elongated hole directed toward the processing nozzles 50a-50d. 74 and a second other-side elongated hole 75 are formed.
• the third processing nozzle 50c is connected to the chemical solution source 58c and the pure water source 58b, and both the supply of the chemical solution in the chemical solution cleaning process and the supply force of pure water in the rinsing process are both.
• the force shown through the third processing nozzle 50c is not limited to this example, but may be performed through another processing nozzle.
• the arm 54 is once returned to the standby position, and droplets are removed in the arm storage chamber 25b isolated from the processing chamber 25a.
• the leaving process may be performed.
• the first and second pure water blowing nozzles 90 and 92 are changed to the processing nozzles 50a to 50d and the head 52. It is preferable to provide a step of blowing out pure water.
• the force shown as an example of drying the wafer W by rotating the wafer W is not limited to this as the fourth step of the cleaning process.
• the arm 54 swings in a state where nitrogen is discharged from the fourth processing nozzle 50d, and the fourth processing nozzle 50d moves the center of the wafer W upward toward the peripheral portion. You may make it move horizontally.
• the arm 54 swings until the fourth processing nozzle 50d is disposed outside the wafer W, and the wafer W rotates for a while even after the discharge of nitrogen from the fourth processing nozzle 50d is stopped. It may be kept in a state where it is allowed to remain.
• the above-described droplet removal process may be started after the discharge of nitrogen from the fourth processing nozzle 50d stops and the arm 54 moves to the standby position.
• the force shown in the example in which gas is blown out from the liquid droplet removal nozzles 60 and 62 after the arm 54 swings to the standby position is not limited to this.
• the step of placing the arm 54 at the standby position and the step of performing the droplet removal process may be performed in parallel.
• the droplet removal nozzles 60 and 62 are provided on both sides of the movement path A of the processing nozzle when the arm 54 enters the standby position, and the processing nozzle when the arm 54 enters the standby position. Since the blowout ports 60a and 62a extending along the movement path A of the processing nozzles 50a to 50d and the head 52 force can be effectively removed during the movement of the arm 54. .
• the substrate cleaning apparatus 20 includes the control device 5 including a computer. By this control device 5, each component of the substrate cleaning device 20 is operated, and each processing to the processing target wafer and W is executed.
• the computer-readable recording medium 6 that records a program executed by the computer of the control device 5 in order to carry out Ueno and W cleaning using the substrate cleaning device 20 is also the subject of this case.
• the recording medium 6 includes a network that propagates various signals in addition to a medium that can be recognized as a single unit such as a flexible disk or a node disk drive.
• the force showing the example in which the substrate processing apparatus according to the present invention is applied to an apparatus for performing the cleaning process on the wafer W is not limited to this. It can be applied to a cleaning process and a drying process for a plate or a CD substrate, and further to an apparatus for performing various processes other than the cleaning process.

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• Engineering & Computer Science (AREA)
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• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Cleaning Or Drying Semiconductors (AREA)

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• 2007
  • 2007-04-12 US US12/083,466 patent/US8439051B2/en active Active
  • 2007-04-12 KR KR1020087001371A patent/KR100945759B1/ko active Active
  • 2007-04-12 WO PCT/JP2007/058070 patent/WO2007132609A1/ja not_active Ceased
  • 2007-04-12 JP JP2008515458A patent/JP4521056B2/ja active Active
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