TW200814173A - Substrate processing method, substrate processing apparatus and recording medium - Google Patents

Substrate processing method, substrate processing apparatus and recording medium Download PDF

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Publication number
TW200814173A
TW200814173A TW096117057A TW96117057A TW200814173A TW 200814173 A TW200814173 A TW 200814173A TW 096117057 A TW096117057 A TW 096117057A TW 96117057 A TW96117057 A TW 96117057A TW 200814173 A TW200814173 A TW 200814173A
Authority
TW
Taiwan
Prior art keywords
processing
nozzle
substrate
processed
liquid
Prior art date
Application number
TW096117057A
Other languages
English (en)
Chinese (zh)
Other versions
TWI362069B (enExample
Inventor
Kazuhisa Matsumoto
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200814173A publication Critical patent/TW200814173A/zh
Application granted granted Critical
Publication of TWI362069B publication Critical patent/TWI362069B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW096117057A 2006-05-15 2007-05-14 Substrate processing method, substrate processing apparatus and recording medium TW200814173A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006135489 2006-05-15

Publications (2)

Publication Number Publication Date
TW200814173A true TW200814173A (en) 2008-03-16
TWI362069B TWI362069B (enExample) 2012-04-11

Family

ID=38693710

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096117057A TW200814173A (en) 2006-05-15 2007-05-14 Substrate processing method, substrate processing apparatus and recording medium

Country Status (5)

Country Link
US (1) US8439051B2 (enExample)
JP (1) JP4521056B2 (enExample)
KR (1) KR100945759B1 (enExample)
TW (1) TW200814173A (enExample)
WO (1) WO2007132609A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI477326B (zh) * 2008-09-04 2015-03-21 Tokyo Electron Ltd 液處理中之噴嘴洗淨方法及其裝置

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JP4694637B2 (ja) * 2009-06-09 2011-06-08 シャープ株式会社 気相成長装置
JP5220839B2 (ja) * 2010-12-28 2013-06-26 東京エレクトロン株式会社 液処理装置および液処理方法
JP5694118B2 (ja) * 2011-01-18 2015-04-01 東京エレクトロン株式会社 液処理装置および液処理方法
JP5734705B2 (ja) * 2011-03-02 2015-06-17 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
JP5518793B2 (ja) 2011-06-15 2014-06-11 東京エレクトロン株式会社 液処理装置および液処理方法
US9378988B2 (en) 2011-07-20 2016-06-28 SCREEN Holdings Co., Ltd. Substrate processing apparatus and substrate processing method using processing solution
JP6014313B2 (ja) * 2011-07-20 2016-10-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP5667545B2 (ja) * 2011-10-24 2015-02-12 東京エレクトロン株式会社 液処理装置および液処理方法
JP6319941B2 (ja) 2013-03-15 2018-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および吐出ヘッド待機方法
JP6281161B2 (ja) * 2013-09-27 2018-02-21 東京エレクトロン株式会社 液処理装置
JP2015092539A (ja) * 2013-09-30 2015-05-14 芝浦メカトロニクス株式会社 基板処理装置及び基板処理方法
KR101621482B1 (ko) * 2014-09-30 2016-05-17 세메스 주식회사 기판 처리 장치 및 방법
TWI622091B (zh) * 2015-06-18 2018-04-21 思可林集團股份有限公司 基板處理裝置
JP6473409B2 (ja) * 2015-11-10 2019-02-20 株式会社Ｓｃｒｅｅｎホールディングス ノズル待機装置および基板処理装置
JP6789038B2 (ja) * 2016-08-29 2020-11-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
CN109923659B (zh) 2016-11-09 2024-03-12 东京毅力科创Fsi公司 用于在处理室中处理微电子衬底的磁悬浮且旋转的卡盘
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
WO2018140789A1 (en) 2017-01-27 2018-08-02 Tel Fsi, Inc. Systems and methods for rotating and translating a substrate in a process chamber
JP6914050B2 (ja) * 2017-02-15 2021-08-04 東京エレクトロン株式会社 基板処理装置
US10864533B2 (en) 2017-06-27 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit, system for and method of forming an integrated circuit
CN111937128A (zh) 2018-02-19 2020-11-13 东京毅力科创美国制造与工程公司 具有可控射束大小的处理喷雾的微电子处理系统
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
JP7185552B2 (ja) * 2019-02-13 2022-12-07 株式会社ディスコ スピンナ洗浄装置
CN114401801B (zh) * 2019-09-25 2023-10-27 东京毅力科创株式会社 处理液喷嘴和清洗装置
TWI821679B (zh) * 2020-08-25 2023-11-11 南韓商杰宜斯科技有限公司 基板處理裝置及基板處理方法
WO2022085414A1 (ja) * 2020-10-23 2022-04-28 株式会社Sumco 枚葉式ウェーハ洗浄装置の配管の洗浄方法
KR102635382B1 (ko) * 2020-12-31 2024-02-14 세메스 주식회사 기판 처리 장치 및 방법
KR20230025233A (ko) * 2021-08-13 2023-02-21 주식회사 제우스 기판처리방법
JP2024035712A (ja) * 2022-09-02 2024-03-14 株式会社Ｓｃｒｅｅｎホールディングス 二流体吐出装置、基板処理装置および二流体ノズル制御方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI477326B (zh) * 2008-09-04 2015-03-21 Tokyo Electron Ltd 液處理中之噴嘴洗淨方法及其裝置

Also Published As

Publication number Publication date
KR100945759B1 (ko) 2010-03-08
JPWO2007132609A1 (ja) 2009-09-24
KR20080020693A (ko) 2008-03-05
JP4521056B2 (ja) 2010-08-11
US8439051B2 (en) 2013-05-14
WO2007132609A1 (ja) 2007-11-22
TWI362069B (enExample) 2012-04-11
US20090114253A1 (en) 2009-05-07

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